JPH11140633A - Thin film deposition device and deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a device for depositing thin film high in homogeneity and precision while solving the unstable output variation of a depositing source caused by depending only on a feedback circuit and keeping the initial amplitude of output variation and to the minimum and to provide a deposition method. SOLUTION: The device is provided with a rotary body 12 arranged in the middle of a supporting tool 15 of the material to be deposited and a depositing source 16 and having a slit and a rotation controller 14 controlling the rotation of the supporting tool 15 for the material to be deposited and the rotary body 12 with optional rotary frequencies. Moreover, a deposition method in which, by controlling the rotation of the rotary body 12 and the supporting tool 15 for the material to be deposited by optional rotary frequencies, only the deposits passed through the slit 13 are deposited on the supporting tool 15 of the material to be deposited is used.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition apparatus used in a process for producing an important optical device or electronic device widely used in the industry and a method for depositing the same.

[0002]

2. Description of the Related Art With respect to a thin film deposition apparatus and a deposition method of this type, a deposit from a deposit source is deposited on a deposit by various methods, and at the same time, the frequency is measured by a frequency measurement method (reference: Physic Vol. 155 (1959) P.206), period measurement method (Reference: Journal of Applied Physics Vol.39 (1968) P.4589 & 5815) and Z-match method (Reference: Journal of Vacuum Science and Technology Vo. 12 (1975)), and the output (evaporation rate, etc.) of the deposit source is controlled in real time from the read value of the deposited film thickness by passing it through the feedback circuit of the thin film deposition control device. With the idea, both the apparatus and the method are almost established in terms of process.

[0003]

However, in such a conventional thin film deposition apparatus and deposition method, due to the manufacturing process,
From the monitored value of the deposited film thickness, the output of the thin film deposition source fluctuates through the feedback circuit of the control device.
The accuracy was not enough. In addition, in deposition such as vapor deposition, the deposition rate at the start of deposition greatly increases beyond the set value, and generally shows a so-called overshoot phenomenon of focusing on the set value while vibrating. Although the deposition rate is more stable at high output, the absolute value of the overshoot becomes large at high output, so that the overshoot of the deposition rate at the start of deposition may easily exceed the set film thickness. It was a problem.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and solves an unstable output fluctuation of a deposit source which depends only on a feedback circuit, and minimizes the amplitude of an initial output fluctuation. It is an object of the present invention to provide a thin film deposition apparatus and a deposition method with high homogeneity and high accuracy.

[0005]

According to the present invention, at least one grooved hole having at least one groove-shaped hole disposed between a support for deposit and a deposit source is provided. At least one rotating body, and a rotation control device for controlling the rotation of the deposited object support and the rotating body at an arbitrary rotation frequency are provided.

Further, at least one or more rotators having at least one or more groove-shaped holes and disposed between the deposit support and the deposit source, and rotating the deposit support. By controlling the rotation to an arbitrary rotation frequency using a rotation control device, only the deposits passing through the groove-shaped holes are deposited on the deposit support.

[0007]

FIG. 1 is a conceptual diagram of an embodiment of a thin film deposition apparatus and a deposition method according to the present invention, and FIG.
FIG. As shown in the drawing, a rotating body 12 having a slit (a groove-shaped hole) 13 and a deposit supporting member 15 are attached to a supporting rotating shaft 11, and the rotating body 12 includes a deposit supporting member 15 and a deposit source 16. Placed in the middle of 14 is a rotation control device for controlling the rotation frequency of the rotating body 12 and the sediment support 15, 17 is the flow of the sediment passing through the slit 13, 18 is a deposition effective area on the sediment support 15, 18
a is a deposition rate monitor. In addition, the rotating body 12 and the slit 13 may be plural. As an example, given a specific dimension, L = 500 mm, d = 280 m
If m, x = 250 mm, r = 140 mm, and s = 50 mm, z = 260 mm, y _s = 26 mm, φ = 18.
1 ° and Ψ = 5.7 °. Here, L is the distance from the deposit source 16 to the deposit support 15 d the diameter of the deposit support 15 x the distance from the deposit source 16 to the rotating body 12 r the radius of the rotating body 12 s the effective deposition area 18 Diameter z Distance from sediment source 16 to arc of slit 13 y _s Radius of slit 13 φ Deposit source 16 supports rotating shaft 11 and slit 13
The angle at which the deposit 13 is viewed from the sediment source 16 is 0.1 Hz.
If the rotation speed of the rotating body 12 is 1 Hz, it is possible to reduce the absolute value of the unstable output error amplitude from the deposit source 16 to 1/10 when the opening angle θ of the slit 13 is 3.6 °. Become. Actually, EB vapor deposition equipment, sputtering equipment, MB
This is effective in an apparatus having a beam-shaped deposit source 16 such as an E apparatus.

With such a structure, the effective deposition amount passing through the slit 13 per pulse from the deposit source 16 depends on the opening angle θ of the slit, the deposit support 15 and the rotating body 12.
The effect is that the amount of deposition, especially at the start of deposition, reduces the effect of large output fluctuations of the deposit source 16 even in deposition with high output (evaporation rate). Since the speed is stabilized, rapid deposition due to bumping or the like can be prevented, and remarkable improvement in thin film homogeneity can be obtained as compared with the prior art.

In addition to the above, even though the output from the deposit source 16 is large, the amount of deposition per pulse can be reduced by the rotation control device 14 even if the output from the deposit source 16 is large. Can be suppressed minutely. As an effect, since the controllability of the minute deposition amount is improved, it is possible to improve the accuracy and precision of the thin film deposition amount particularly when the film thickness is minute.

In such a structure, if the rotation frequency of the rotating body 12 and the deposit support 15 are the same, for example, an EB vapor deposition apparatus is used as the deposit source 16 and the rotating body 12,
When deposition is performed at a rotation frequency of 1 Hz for both the deposit support 15, deposition occurs only at the position of the effective deposition area 18, and does not occur at other portions of the deposit support 15. Therefore, no vapor deposition occurs on the sample adjacent to the effective deposition area 18, and it is not necessary to replace a plurality of samples when performing different types of vapor deposition. That is, as an effect, it is possible to perform mask deposition in which a plurality of deposits are provided on the deposit support 15 and deposition is performed only on a part that cannot be realized by the conventional technology. In FIG. 1, the same effect can be obtained by a configuration in which the arrangement of the deposit support 15 and the deposit source 16 is upside down.

When the deposition is started, the rotating body 12 is rotated to lower the average deposition rate, and when the deposition rate is stabilized, the slit 13 and the sample are aligned to increase the average deposition rate, thereby shortening the total deposition time. Can also.

In the conventional method, even if the output is simply changed to realize this, the output must be increased on the way and eventually an overshoot occurs. The effect of reducing the influence of the chute and shortening the total deposition time is produced.

The rotating body 12 shown in FIG. 2 can have a variable opening angle θ by being constituted by a plurality of parts having the same center of rotation.

As described above, if only the means for changing the output of the deposit source is used in the conventional feedback circuit, it takes a long time to stabilize the output, and at the same time, a large overshoot occurs. Therefore, the controllability of the film thickness and the film quality are deteriorated. However, when a means for rotating the rotating body 12 having the slit 13 during deposition of a thin film is added as in the present invention, the amount of deposition passing through the slit 13 per pulse will be the opening angle θ of the slit 13 and the Since it can be adjusted by the number of rotations, a large output fluctuation amplitude at the start of deposition can be reduced without lowering the output. Therefore, it is possible to provide a stable deposition rate, and it is possible to perform highly uniform thin film deposition with high accuracy.

[0015]

As described above, in the thin film deposition apparatus and the deposition method according to the present invention, the amount of deposition passing through the groove-like holes of the rotating body is large depending on the opening angle and the rotation frequency, particularly in the early stage of deposition. The output change of the deposit source can be suppressed as much as possible without causing the output fluctuation amplitude. It provides high uniformity and high precision thin film deposition because it can solve the unstable output change of the deposit source, which depends only on the feedback circuit, and minimize the absolute value of the output amplitude. I was able to realize that.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of an embodiment of a thin film deposition apparatus and a deposition method according to the present invention.

FIG. 2 is a plan view of a rotating body.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 Support rotating shaft 12 Rotating body 13 Slit 14 Rotation control device 15 Deposit support 16 Deposit source 17 Flow of deposit passing through slit 18 Effective deposition area 18a Deposition speed monitor L Deposit support from deposit source Distance from the sediment support x the distance from the sediment source to the rotating body r the radius of the rotating body s the effective deposition area diameter z the distance from the sediment source to the slit arc y _{s the} slit radius φ supported from the sediment source Angle of view of rotation axis and slit arc 角度 Angle of view of slit from sediment source θ Opening angle of slit

Claims (2)

[Claims] 1. An at least one or more rotating body having at least one or more groove-shaped holes, disposed between a deposit support and a deposit source, the deposit support and the rotation A thin film deposition apparatus, comprising: a rotation control device for controlling the rotation of the body to an arbitrary rotation frequency. 2. The method according to claim 1, further comprising the step of: rotating the at least one rotating body having at least one or more groove-shaped holes disposed between the sediment support and the sediment source; and rotating the sediment support. And depositing only the deposits passing through the groove-shaped holes on the deposit support by controlling the rotation to an arbitrary rotation frequency using a rotation control device.