JPH11135265A - Electrode forming method for organic electroluminescence element - Google Patents
Electrode forming method for organic electroluminescence elementInfo
- Publication number
- JPH11135265A JPH11135265A JP9301624A JP30162497A JPH11135265A JP H11135265 A JPH11135265 A JP H11135265A JP 9301624 A JP9301624 A JP 9301624A JP 30162497 A JP30162497 A JP 30162497A JP H11135265 A JPH11135265 A JP H11135265A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- electrode
- organic
- thin
- organic electroluminescence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052709 silver Inorganic materials 0.000 claims abstract description 16
- 239000004332 silver Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910017073 AlLi Inorganic materials 0.000 description 1
- -1 MgAg Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- ZXZKYYHTWHJHFT-UHFFFAOYSA-N quinoline-2,8-diol Chemical compound C1=CC(=O)NC2=C1C=CC=C2O ZXZKYYHTWHJHFT-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、有機エレクトロル
ミネッセンス素子の電極形成方法に係り、特に、電子注
入電極として、電子注入効率が良く、かつ、安定性に優
れたアルミニウム（Ａｌ）電極の形成方法に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an electrode of an organic electroluminescence device, and more particularly to a method for forming an aluminum (Al) electrode having high electron injection efficiency and excellent stability as an electron injection electrode. It is about.
【０００２】[0002]
【従来の技術】従来、このような分野の技術としては、
例えば、文献名：Ｃ．Ｗ．Ｔａｎｇａｎｄ Ｓ．Ａ．Ｖ
ａｎＳｌｙｋｅ：Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．ｖｏ
ｌ．５１ Ｎｏ．１２ ｐｐ．９１３〜９１５（１９８
７）に開示されるものがあった。2. Description of the Related Art Conventionally, techniques in such a field include:
For example, the document title: C.I. W. Tangand S. A. V
anSlyke: Appl. Phys. Lett. vo
l. 51 No. 12 pp. 913-915 (198
There was one disclosed in 7).
【０００３】すなわち、上記文献に示されるように、有
機材料の電荷注入励起による発光である有機エレクトロ
ルミネッセンス（以下、有機ＥＬと略する）を利用した
発光素子は、Ｔａｎｇ等の低電圧、高輝度発光素子の実
現を機に注目され、研究開発が活発に行われている。Ｔ
ａｎｇらの用いた２層型素子は、陽電極である透明電極
上に、有機正孔輸送層、有機電子輸送性発光層、陰電極
の順に構成したものである。低電圧で高輝度・高効率の
発光を得るためには、発光特性の優れた有機材料を用い
るとともに、有機薄膜層に効率良く電荷を注入する必要
がある。そのために、陽電極としては仕事関数の大きい
（概ね４ｅＶ以上の）金属、電気伝導材料が用いられ
る。That is, as shown in the above-mentioned document, a light-emitting element utilizing organic electroluminescence (hereinafter abbreviated as organic EL), which emits light by charge injection excitation of an organic material, has a low voltage and high luminance such as Tang. Attention has been paid to the realization of light emitting elements, and research and development are being actively conducted. T
The two-layer type element used by Ang et al. has an organic hole transporting layer, an organic electron transporting light emitting layer, and a negative electrode in this order on a transparent electrode which is a positive electrode. In order to obtain high-luminance and high-efficiency light emission at a low voltage, it is necessary to use an organic material having excellent light-emitting characteristics and efficiently inject electric charges into the organic thin film layer. Therefore, as the positive electrode, a metal having a large work function (about 4 eV or more) or an electrically conductive material is used.
【０００４】具体的には、酸化インジウムスズ合金（Ｉ
ＴＯ），ＳｎＯ2 ，ＺｎＯ等の透明酸化物導電材料、ま
た金（Ａｕ）などの金属を用いることができる。Ａｕを
用いる場合には、エレクトロルミネッセンス光の透過を
良くするために、膜厚を１０〜４０ｎｍとし、半透明薄
膜とすることが望ましい。一方、陰電極として用いる電
子注入用電極材料としては、仕事関数の小さい（概ね４
ｅＶ以下の）金属、合金等を用いることができる。[0004] Specifically, indium tin oxide alloy (I
A transparent oxide conductive material such as TO), SnO 2 , and ZnO, and a metal such as gold (Au) can be used. In the case of using Au, it is desirable to set the film thickness to 10 to 40 nm and make it a translucent thin film in order to improve the transmission of the electroluminescence light. On the other hand, as an electron injection electrode material used as a negative electrode, a work function is small (approximately 4
Metals, alloys, etc. (eV or less) can be used.
【０００５】具体的には、Ｌｉ，Ｍｇ，Ｉｎ，Ａｌなど
の金属、ＭｇＡｇ，ＭｇＩｎ，ＡｌＬｉ等の合金を用い
ることができる。More specifically, metals such as Li, Mg, In, and Al, and alloys such as MgAg, MgIn, and AlLi can be used.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、陰電極
として用いるのに好適な仕事関数の小さい金属は、一般
に酸化され易い等、安定性が低い傾向にある。その中
で、比較的安定性に優れ、製造プロセス技術も確立して
いるＡｌを用いた場合には、Ａｌの仕事関数が、４．２
ｅＶであり、Ｍｇ（３．７ｅＶ）、Ｌｉ（２．４ｅＶ）
等と比べると大きく、電流注入効率が低くなるという問
題点があった。However, metals having a small work function suitable for use as a cathode tend to have low stability such as being easily oxidized. Among them, when Al, which is relatively excellent in stability and the production process technology is established, is used, the work function of Al is 4.2.
eV, Mg (3.7 eV), Li (2.4 eV)
However, there is a problem that the current injection efficiency is low.
【０００７】本発明は、上記問題点を除去し、電流の注
入効率を向上させ、エレクトロルミネッセンス発光特性
を向上させることができる有機エレクトロルミネッセン
ス素子の電極形成方法を提供することを目的とする。An object of the present invention is to provide a method for forming an electrode of an organic electroluminescence device, which can eliminate the above problems, improve the current injection efficiency, and improve the electroluminescence emission characteristics.
【０００８】[0008]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕有機エレクトロルミネッセンス素子の電極形成方
法において、透光性基板上に透明電極を形成する工程
と、前記透明電極上に有機薄膜層を形成する工程と、前
記有機薄膜層上に原子層レベルの極薄い銀膜を形成する
工程と、前記原子層レベルの極薄い銀膜上に金属陰電極
を形成する工程とを施すようにしたものである。According to the present invention, there is provided a method for forming an electrode of an organic electroluminescence device, comprising the steps of: forming a transparent electrode on a light-transmitting substrate; A step of forming an organic thin film layer on an electrode, a step of forming an ultra-thin silver film at the atomic layer level on the organic thin film layer, and a step of forming a metal cathode on the ultra-thin silver film at the atomic layer level Is applied.
【０００９】〔２〕上記〔１〕記載の有機エレクトロル
ミネッセンス素子の電極形成方法において、前記金属陰
電極がＡｌからなる。 〔３〕上記〔１〕記載の有機エレクトロルミネッセンス
素子の電極形成方法において、前記原子層レベルの極薄
い銀膜を形成する工程は、シャッタを閉じたまま銀を真
空装置内で溶融させるようにしたものである。[2] In the method for forming an electrode of an organic electroluminescence device according to [1], the metal negative electrode is made of Al. [3] In the method for forming an electrode of an organic electroluminescence device according to the above [1], the step of forming an extremely thin silver film at the atomic layer level is such that silver is melted in a vacuum apparatus while a shutter is closed. Things.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら詳細に説明する。図１は本発明の
実施例のＥＬ素子の構成を示す図である。この図に示す
ように、透光性基板（ガラス基板）１上に、陽電極とし
て透明電極層（ＩＴＯ層）２、有機薄膜層３、極薄い銀
層４、陰電極となる金属電極層（Ａｌ層）５を順次積層
させる。その有機薄膜層３は、有機正孔輸送層３Ａ、有
機電子輸送性発光層３Ｂの２層構造よりなる積層膜を用
いた。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a diagram showing a configuration of an EL device according to an embodiment of the present invention. As shown in this figure, a transparent electrode layer (ITO layer) 2 as a positive electrode, an organic thin film layer 3, an extremely thin silver layer 4, and a metal electrode layer (a negative electrode) are formed on a translucent substrate (glass substrate) 1. (Al layer) 5 are sequentially laminated. As the organic thin film layer 3, a laminated film having a two-layer structure of an organic hole transporting layer 3A and an organic electron transporting light emitting layer 3B was used.
【００１１】このように構成した有機ＥＬ素子は、陽電
極より注入され有機正孔輸送層３Ａ中を伝導した正孔
と、陰電極６より注入され有機電子輸送性発光層３Ｂ中
を伝導した電子とが、後者の薄膜中で再結合発光し、陽
電極２側から透光性基板１を通して光が放射される。具
体的に説明すると、まず、十分に洗浄されたガラス基板
１上に、スパッタリング法により、ＩＴＯ層２を２００
ｎｍの厚さに形成する。形成したＩＴＯ層２のシート抵
抗は１０Ω／□であった。更に、フォトリソエッチング
法により、このＩＴＯ層２を２ｍｍ幅のストライプ状に
加工した。In the organic EL device thus constructed, holes injected from the positive electrode and conducted in the organic hole transporting layer 3A and electrons injected from the negative electrode 6 and conducted in the organic electron transporting light emitting layer 3B. Recombine and emit light in the latter thin film, and light is emitted from the positive electrode 2 side through the translucent substrate 1. Specifically, first, an ITO layer 2 is formed on a sufficiently cleaned glass substrate 1 by a sputtering method.
It is formed to a thickness of nm. The sheet resistance of the formed ITO layer 2 was 10 Ω / □. Further, the ITO layer 2 was processed into a stripe shape having a width of 2 mm by a photolithographic etching method.
【００１２】次に、この基板をアセトンおよびイソプロ
ピルアルコールを用いて超音波洗浄した後、乾燥させ、
有機膜形成用の真空蒸着装置に移す。まず、正孔輸送材
料として精製したＴＰＤ〔Ｎ，Ｎ′−ジフェニル−Ｎ，
Ｎ′−ビス（３−メチルフェニル）−１，１′−ビフェ
ニル−４，４′−ジアミン〕を４０ｎｍの厚さに蒸着す
る。その蒸着は、試料を石英製のるつぼに入れ、そのる
つぼを抵抗線加熱することにより、試料を蒸発させて行
う。るつぼの温度を調整することにより、蒸着速度が、
０．３ｎｍ／ｓｅｃになるように制御する。このように
して、有機正孔輸送層３Ａを形成した。Next, the substrate is subjected to ultrasonic cleaning using acetone and isopropyl alcohol, and then dried,
Transfer to vacuum deposition equipment for organic film formation. First, purified TPD [N, N'-diphenyl-N,
N'-bis (3-methylphenyl) -1,1'-biphenyl-4,4'-diamine] is deposited to a thickness of 40 nm. The vapor deposition is performed by putting the sample in a crucible made of quartz and heating the crucible by resistance wire to evaporate the sample. By adjusting the temperature of the crucible, the deposition rate
Control is performed so as to be 0.3 nm / sec. Thus, the organic hole transport layer 3A was formed.
【００１３】次いで、電子輸送性発光材料として、別の
るつぼに入れた昇華精製したＡｌｑ〔トリス（８−ヒド
ロキシキノリノール）アルミニウム〕を、蒸着速度０．
３ｎｍ／ｓｅｃ、膜厚５０ｎｍに形成した。このように
して、有機電子輸送性発光層３Ｂを形成した。次に、こ
の基板を金属蒸着用の真空装置に移した。真空度５×１
０-4Ｐａにおいて、まず、タングステンボートに入れた
銀（Ａｇ）をボートに通電赤熱させることにより、約３
０秒間溶融させる。この時、タングステンボート上に配
置した電極蒸着用シャッタは閉じたままにしておき（こ
の操作を、以下“Ａｇ予備蒸着”という）、原子層レベ
ルの薄い銀薄膜４を形成した。Next, as an electron-transporting luminescent material, sublimated and purified Alq [tris (8-hydroxyquinolinol) aluminum] placed in another crucible was deposited at a vapor deposition rate of 0.1.
The film was formed at a thickness of 3 nm / sec and a thickness of 50 nm. Thus, the organic electron transporting light emitting layer 3B was formed. Next, the substrate was transferred to a vacuum apparatus for metal deposition. Vacuum 5 × 1
At 0 -4 Pa, silver (Ag) put in a tungsten boat is first heated to about 3
Let melt for 0 seconds. At this time, the electrode deposition shutter disposed on the tungsten boat was kept closed (this operation is hereinafter referred to as “Ag pre-deposition”) to form a thin silver thin film 4 at the atomic layer level.
【００１４】次に、引き続いて、タングステンボートに
入れたアルミニウム（Ａｌ）を、蒸着速度１．５ｎｍ／
ｓｅｃで厚さ１５０ｎｍ蒸着し、陰電極５を形成する。
この陰電極５は、幅２ｍｍのスリットを設けた金属マス
クを基板に被せることで、２ｍｍ幅のストライプ状にな
るように形成する。このストライプは、陽電極（ＩＴＯ
電極）２と直交するように形成する。一方、比較例とし
て、Ａｇ予備蒸着の工程のみを除いた同様の工程で素子
を作製した。Next, aluminum (Al) placed in a tungsten boat is deposited at a deposition rate of 1.5 nm /
In 150 seconds, a thickness of 150 nm is deposited to form the negative electrode 5.
The negative electrode 5 is formed in a stripe shape of 2 mm width by covering the substrate with a metal mask provided with a slit of 2 mm width. This stripe is a positive electrode (ITO)
(Electrode) 2. On the other hand, as a comparative example, an element was manufactured in the same process except for the Ag pre-deposition process.
【００１５】このようにして作製したＥＬ素子の両電極
間に電圧を印加したところ、両電極のクロスした部分
（２ｍｍ×２ｍｍの領域）から発光が生じ、ガラス基板
側から観察される。発光は５２０ｎｍにピークを有する
Ａｌｑからの緑色発光である。図２は本発明の実施例の
ＥＬ素子と比較例のＥＬ素子との発光輝度−電圧特性
図、図３はそのＥＬ素子と比較例のＥＬ素子との発光輝
度−電流密度特性図である。When a voltage is applied between both electrodes of the EL device thus manufactured, light is emitted from a crossed portion (2 mm × 2 mm area) of both electrodes and observed from the glass substrate side. Emission is green emission from Alq having a peak at 520 nm. FIG. 2 is a light emission luminance-voltage characteristic diagram of the EL element of the example of the present invention and the EL element of the comparative example, and FIG. 3 is a light emission luminance-current density characteristic diagram of the EL element and the EL element of the comparative example.
【００１６】図２において、縦軸に発光輝度（ｃｄ／ｍ
2 ）、横軸に電圧（Ｖ）を示しており、この図におい
て、ａは本発明の実施例のＥＬ素子（Ａｇ予備蒸着あ
り）の場合、ｂは比較例のＥＬ素子（Ａｇ予備蒸着な
し）の場合を示している。この図から明らかなように、
本発明の実施例のＥＬ素子の方が、発光輝度−電圧特性
が向上していることがわかる。In FIG. 2, the vertical axis represents light emission luminance (cd / m).
2 ) The voltage (V) is shown on the horizontal axis. In this figure, a is the EL element of the embodiment of the present invention (with Ag pre-deposition), b is the EL element of the comparative example (without Ag pre-deposition) ). As is clear from this figure,
It can be seen that the EL device of the example of the present invention has improved emission luminance-voltage characteristics.
【００１７】また、図３において、縦軸に発光輝度（ｃ
ｄ／ｍ2 ）、横軸に電流（ｍＡ／ｃｍ2 ）を示してお
り、この図において、ａは本発明の実施例のＥＬ素子
（Ａｇ予備蒸着あり）の場合、ｂは比較例のＥＬ素子
（Ａｇ予備蒸着なし）の場合を示している。この図から
明らかなように、本発明の実施例のＥＬ素子の方が、発
光輝度−電流密度特性が向上していることがわかる。In FIG. 3, the luminous luminance (c
d / m 2 ) and the current (mA / cm 2 ) on the horizontal axis. In this figure, a is the EL element of the embodiment of the present invention (with Ag pre-deposition), and b is the EL of the comparative example. An element (without Ag pre-deposition) is shown. As is apparent from this figure, the EL device of the example of the present invention has improved emission luminance-current density characteristics.
【００１８】上記したように、Ａｇ予備蒸着を行うこと
により、同じ印加電圧での発光輝度が向上し、かつ、同
じ注入電流での発光輝度も向上する。また、本発明の実
施例と比較例とのＥＬ素子を同じ電流密度で連続駆動
し、発光輝度低下率を測定したところ、本発明の実施例
のＥＬ素子の方が比較例のＥＬ素子に比べ、発光輝度が
５０％に低下するまでの時間は約３倍長く、素子の安定
性の向上も確認することができた。As described above, by performing the Ag preliminary deposition, the light emission luminance at the same applied voltage and the light emission luminance at the same injection current are improved. When the EL devices of the example of the present invention and the comparative example were continuously driven at the same current density and the emission luminance reduction rate was measured, the EL device of the example of the present invention was compared with the EL device of the comparative example. The time required for the emission luminance to decrease to 50% was about three times longer, and improvement in the stability of the device could be confirmed.
【００１９】このような特性向上が見られた理由として
は、Ａｇ予備蒸着によって、有機膜上に極く薄いＡｇの
層が形成され、そのＡｇ層が陰電極材料Ａｌと有機膜と
の密着性の向上等に寄与する結果として、有機膜とＡｌ
電極との電子注入障壁が低減したためではないかと考え
られる。Ａｇが実際に付着しているかどうかを調べるた
めに、Ｓｉ基板上に予備蒸着操作をしたものをサンプル
とし、オージェ分析する。The reason for the improvement in the characteristics is that a very thin Ag layer is formed on the organic film by the Ag pre-deposition, and the Ag layer is used for the adhesion between the negative electrode material Al and the organic film. As a result that contributes to the improvement of
This is probably because the electron injection barrier with the electrode has been reduced. In order to check whether Ag is actually attached, a sample obtained by performing a preliminary vapor deposition operation on a Si substrate is used as a sample and subjected to Auger analysis.
【００２０】その結果、シャッタを閉じたまま蒸着して
いるにも関わらず、基板上にはＡｇ原子が付着している
ことを確認することができた。なお、本発明は上記実施
例に限定されるものではなく、本発明の趣旨に基づいて
種々の変形が可能であり、これらを本発明の範囲から排
除するものではない。As a result, it was confirmed that Ag atoms had adhered to the substrate despite the fact that vapor deposition was performed with the shutter closed. It should be noted that the present invention is not limited to the above embodiment, and various modifications can be made based on the gist of the present invention, and these are not excluded from the scope of the present invention.
【００２１】[0021]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、次のような効果を奏することができる。 （Ａ）請求項１又は２記載の発明によれば、金属陰電極
を形成する前に、Ａｇ予備蒸着を行うことにより、同じ
印加電圧での発光輝度が向上し、かつ、同じ注入電流で
の発光輝度も向上させることができる。As described above, according to the present invention, the following effects can be obtained. (A) According to the first or second aspect of the present invention, by performing Ag pre-deposition before forming the metal negative electrode, the emission luminance at the same applied voltage is improved, and the light emission at the same injection current is improved. Light emission luminance can also be improved.
【００２２】（Ｂ）請求項３記載の発明によれば、シャ
ッタを閉じたまま銀を真空装置内で溶融させることによ
り、原子層レベルの極薄い銀膜を容易に形成することが
できる。(B) According to the third aspect of the present invention, an extremely thin silver film at the atomic layer level can be easily formed by melting silver in a vacuum apparatus with the shutter closed.
【図１】本発明の実施例のＥＬ素子の構成を示す図であ
る。FIG. 1 is a diagram showing a configuration of an EL device according to an example of the present invention.
【図２】本発明の実施例のＥＬ素子と比較例のＥＬ素子
との発光輝度−電圧特性図である。FIG. 2 is a graph showing light emission luminance-voltage characteristics of an EL element of an example of the present invention and an EL element of a comparative example.
【図３】本発明の実施例のＥＬ素子と比較例のＥＬ素子
との発光輝度−電流密度特性図である。FIG. 3 is a graph showing emission luminance-current density characteristics of an EL element of an example of the present invention and an EL element of a comparative example.
【符号の説明】 １ 透光性基板（ガラス基板） ２ 透明電極層（ＩＴＯ層） ３ 有機薄膜層 ３Ａ 有機正孔輸送層 ３Ｂ 有機電子輸送性発光層 ４ 極薄い銀層 ５ 陰電極となる金属電極層（Ａｌ層）[Description of Signs] 1 Translucent substrate (glass substrate) 2 Transparent electrode layer (ITO layer) 3 Organic thin film layer 3A Organic hole transport layer 3B Organic electron transporting light emitting layer 4 Ultra-thin silver layer 5 Metal serving as negative electrode Electrode layer (Al layer)
Claims (3)
極形成方法において、（ａ）透光性基板上に透明電極を
形成する工程と、（ｂ）前記透明電極上に有機薄膜層を
形成する工程と、（ｃ）前記有機薄膜層上に原子層レベ
ルの極薄い銀膜を形成する工程と、（ｄ）前記原子層レ
ベルの極薄い銀膜上に金属陰電極を形成する工程とを施
すことを特徴とする有機エレクトロルミネッセンス素子
の電極形成方法。1. A method for forming an electrode of an organic electroluminescent device, comprising: (a) forming a transparent electrode on a light-transmitting substrate; and (b) forming an organic thin film layer on the transparent electrode. c) forming a very thin silver film at the atomic layer level on the organic thin film layer, and (d) forming a metal negative electrode on the extremely thin silver film at the atomic layer level. For forming an electrode of an organic electroluminescence element.
センス素子の電極形成方法において、前記金属陰電極が
Ａｌからなることを特徴とする有機エレクトロルミネッ
センス素子の電極形成方法。2. The method for forming an electrode of an organic electroluminescence device according to claim 1, wherein the metal negative electrode is made of Al.
センス素子の電極形成方法において、前記原子層レベル
の極薄い銀膜を形成する工程は、シャッタを閉じたまま
銀を真空装置内で溶融させることを特徴とする有機エレ
クトロルミネッセンス素子の電極形成方法。3. The method for forming an electrode of an organic electroluminescence device according to claim 1, wherein the step of forming an extremely thin silver film at the atomic layer level comprises melting silver in a vacuum apparatus with a shutter closed. A method for forming an electrode of an organic electroluminescence element, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9301624A JPH11135265A (en) | 1997-11-04 | 1997-11-04 | Electrode forming method for organic electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9301624A JPH11135265A (en) | 1997-11-04 | 1997-11-04 | Electrode forming method for organic electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11135265A true JPH11135265A (en) | 1999-05-21 |
Family
ID=17899194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9301624A Withdrawn JPH11135265A (en) | 1997-11-04 | 1997-11-04 | Electrode forming method for organic electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11135265A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007096538A2 (en) * | 2006-02-27 | 2007-08-30 | Commissariat A L'energie Atomique | Organic light-emitting diode with a multilayer transparent electrode |
-
1997
- 1997-11-04 JP JP9301624A patent/JPH11135265A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007096538A2 (en) * | 2006-02-27 | 2007-08-30 | Commissariat A L'energie Atomique | Organic light-emitting diode with a multilayer transparent electrode |
| WO2007096538A3 (en) * | 2006-02-27 | 2007-11-01 | Commissariat Energie Atomique | Organic light-emitting diode with a multilayer transparent electrode |
| US8110984B2 (en) | 2006-02-27 | 2012-02-07 | Commissariat A L'energie Atomique | Organic light-emitting diode with transparent multilayer electrode |
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