JPH11133630A - Controlling device of resist stripper - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a controlling device for a resist stripper used to strip a resist in the production processes of semiconductors and liquid crystal substrates in which the quality of the resist stripper is controlled to a cost. level and the use amt. of the liquid, shutdown time of operation and cost can be decreased. SOLUTION: This device is equipped with a resist concn. detecting and liquid replenishing means and a hydroxyl amine concn. detecting and liquid replenishing means. By the resist concn. detecting and liquid replenishing means, the concn. of the dissolved resist in the resist stripper is detected by an absorptiometer 16 and at least one of the resist stripping solution, hydroxylamine soln., pure water and preliminarily prepared new resist stripper is replenished. By the hydroxylamine concn. detecting and liquid replenishing means, the hydroxyl amine concn. in the resist stripper is detected by an absorptiometer 15 and at least one of the resist stripping solution, hydroxylamine soln. and pure water is replenished.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for managing a resist stripping solution used for stripping a resist in a semiconductor manufacturing process or a liquid crystal substrate manufacturing process. The present invention relates to a resist stripping liquid management device having a concentration adjusting mechanism, a water concentration adjusting mechanism, a liquid level adjusting mechanism or an overflow mechanism, and a dissolved resist concentration adjusting mechanism accompanying concentration of a resist eluted by resist stripping.

[0002]

2. Description of the Related Art Resist materials used in a photolithography process in a semiconductor or liquid crystal substrate manufacturing process include:
There are a positive type which is solubilized by exposure and a negative type which is insolubilized by exposure, and the positive type is often used. Representative examples of positive resists include naphthoquinonediazide-based photosensitizers and alkali-soluble resins (novolak resins)
There is a thing which has as a main component. In the final stage of the photolithography step, a step of completely removing the resist from the substrate is required. In a resist stripping process for a semiconductor or a liquid crystal substrate, a dry ashing process using oxygen plasma and a wet stripping process using a resist stripping solution are both used. Silicon oxide and aluminum oxide are generated on the substrate that has undergone the dry ashing process using oxygen plasma. In the next wet stripping process, it is necessary not only to strip the resist but also to completely remove the metal oxide. .

Japanese Patent Application Laid-Open No. Hei 7-235487 discloses a resist stripping solution discharging means for detecting the dissolved resist concentration of a resist stripping solution with an absorptiometer and discharging the resist stripping solution, and a liquid level of the resist stripping solution. A first replenishing means for replenishing an organic solvent and an alkanolamine, or a new resist stripping solution prepared in advance by mixing an organic solvent and an alkanolamine with a surface level meter, and an absorptiometer for measuring the alkanolamine concentration of the resist stripping solution And a second replenishing means for replenishing at least one of an organic solvent and an alkanolamine. In addition, the present applicant has already used a resist stripper discharging means for detecting the dissolved resist concentration of the resist stripper with an absorptiometer and discharging the resist stripper, and a liquid level meter for the resist stripper with a liquid level meter. A first replenishing means for detecting and replenishing a resist stripping solution and pure water, or a new resist stripping solution prepared in advance with a resist stripping solution and pure water, and detecting the water concentration of the resist stripping solution by an absorptiometer. A resist stripping liquid management device including a resist stripping solution and a second replenishing means for replenishing at least one of pure water has been developed, and a patent application has been filed (Japanese Patent Application No. 8-19).
No. 3005).

In the resist stripping process for semiconductors and liquid crystal substrates, as described above, a solution in which an organic alkali or an organic solvent is combined is mainly used as a resist stripping solution, and a solution obtained by adding an appropriate amount of water to the solution is used. However, it has been found that a solution to which an appropriate amount of hydroxylamine is added has an excellent effect. That is, a resist stripping solution containing an appropriate amount of hydroxylamine can lower the processing temperature of a substrate from about 80 ° C. to about 65 ° C. or less, for example, about 40 ° C., and can form a base metal for forming a substrate or a semiconductor circuit. This has the effect of reducing damage to silicon and removing silicon oxide and aluminum oxide. For example, a solution of dimethyl sulfoxide and hydroxylamine, a solution of N-methylpyrrolidone and hydroxylamine, a solution of alkanolamine and hydroxylamine, a solution of alkanolamine and glycol alcohol and hydroxylamine,
Alternatively, a solution in which pure water or various additives are added thereto is used in a spray system, a cassette system, a dip system, or the like.

[0005] In the conventional method, a predetermined amount of a predetermined amount of a new resist stripping solution is charged into a resist stripping treatment tank and started.
As an index, such as the number of substrates processed based on experience, etc., when the resist stripper reaches a predetermined degradation concentration range while reducing the amount,
It is in the form of a batch operation in which the entire quantity is exchanged at once with a new liquid prepared in advance. The liquid exchange time is not constant depending on the tank capacity, the type of substrate, the number of substrates to be processed, etc., but is performed once every about four days. When the resist stripping solution is deteriorated, a constant stripping rate cannot be obtained, and stripping residues and metal oxide residues are generated, which causes a reduction in yield. If a defective product occurs in the resist stripping process, which is the final stage of the photolithography process, the damage amount is large.

[0006] A resist stripping solution containing hydroxylamine is usually used at 30 to 65 ° C. The boiling points of components used in the resist stripping solution are about 160 to 250 ° C. for organic alkalis and organic solvents, about 160 ° C. for hydroxylamine, and 100 ° C. for water. Accordingly, during use, the low-boiling-point water evaporates preferentially with the use of the purge nitrogen gas for sealing the atmosphere of the resist-removing tank during use. For this reason, the resist stripping performance is sequentially reduced, but conventionally, the water concentration has not been measured in real time, and the water concentration has not been constantly controlled to a predetermined concentration. If the moisture concentration is further reduced, it will have a flash point and an explosion hazard will occur.

During use, the resist stripping solution is accompanied by a purge nitrogen gas for sealing the atmosphere of the resist stripping tank, and the low boiling point hydroxylamine evaporates next to the water, and the hydroxylamine concentration decreases. Cause fluctuations. For this reason, the resist stripping performance is sequentially reduced, but conventionally, the hydroxylamine concentration has not been measured in real time and the concentration has not been controlled to a predetermined concentration.

Further, the resist dissolved in the resist stripping solution by the resist stripping process is successively concentrated, which causes deterioration of the resist stripping performance such as a reduction in stripping rate and generation of stripping residue. Has not been measured in real time and has not been constantly controlled to a predetermined concentration.

[0009]

Therefore, since the water concentration, hydroxylamine concentration and dissolved resist concentration during this period change with time and are not constant, resist peeling residues and metal oxide residues are generated, resulting in a high liquid crystal substrate. It was difficult to control the precision of the fine dimensions, making the product quality unstable and reducing the yield. Operation stoppage during liquid exchange (downtime)
As a result, the operation rate was greatly reduced, and labor costs for replacing the resist stripping solution were required.

The present invention has been made in view of the above points, and an object of the present invention is to make use of the advantages of a simple conventional line transfer system suitable for mass production of a liquid crystal substrate manufacturing process, and to provide a semiconductor manufacturing method. In the process, the above-mentioned problem of the prior art is solved while taking advantage of the silicon wafer cassette processing method. That is, the object of the present invention is to prepare a stock solution having a predetermined component ratio and automatically control the resist stripper to a predetermined water concentration, hydroxylamine concentration and dissolved resist concentration,
In addition, by appropriately controlling the replenishment of the liquid in the resist stripping tank, the resist stripping performance is constantly kept constant, the amount of stock solution used is reduced, safety is secured, and the operation stoppage time is greatly reduced. An object of the present invention is to make it possible to reduce the overall manufacturing cost.

[0011]

According to the present invention, the concentration of a resist dissolved in a resist stripping solution in a resist stripping tank is determined as follows.
As shown in FIG. 11, it was confirmed by experiments that the absorbance was closely related to the absorbance (highly linear relationship).
The dissolved resist concentration is adjusted and controlled by measuring the absorbance, and the water concentration in the resist stripping solution is closely related to the absorbance (highly linear relationship) as shown in FIG.
Was confirmed by an experiment, and the water concentration was adjusted and controlled by measuring the absorbance. Further, the present invention has confirmed by experiments that the hydroxylamine concentration in the resist stripping solution has a close relationship (highly linear relationship) with its absorbance as shown in FIG. The amine concentration is adjusted and controlled by absorbance measurement.
At least one of the concentrations of the components is controlled independently or simultaneously.

That is, in order to achieve the above object,
The resist stripping liquid management apparatus of the present invention supplies at least one of a resist stripping undiluted solution, a hydroxylamine solution, pure water, and a pre-prepared new resist stripping solution to a resist stripping treatment tank, and a liquid level adjusting mechanism to maintain a constant liquid level. Liquid level control and liquid replenishment means to keep the concentration of hydroxylamine in the resist stripping solution in the resist stripping tank detected by an absorptiometer to remove at least one of the resist stripping solution, hydroxylamine solution and pure water. It is characterized by having a hydroxylamine concentration detecting / liquid replenishing means (hereinafter, referred to as a second replenishing means) for replenishing the treatment tank (see FIG. 1).

Further, the resist stripping solution management apparatus of the present invention detects the dissolved resist concentration of the resist stripping solution in the resist stripping tank with an absorptiometer and prepares a resist stripping solution, a hydroxylamine solution, pure water and preliminarily prepared. A resist concentration detecting / liquid replenishing means (hereinafter referred to as a first replenishing means) for replenishing at least one of the new resist stripping solution into the resist stripping tank, and absorbing the hydroxylamine concentration of the resist stripping solution in the resist stripping tank. A second replenishing means for replenishing at least one of a resist stripping solution, a hydroxylamine solution and pure water detected by a photometer into a resist stripping tank is provided (see FIG. 2).

Further, the resist stripping solution management apparatus of the present invention detects the dissolved resist concentration of the resist stripping solution in the resist stripping tank with an absorptiometer and prepares the resist stripping solution, hydroxylamine solution, pure water and preliminarily prepared. First replenishing means for replenishing at least one of the new resist stripping solution into the resist stripping tank, and detecting the moisture concentration of the resist stripping solution in the resist stripping tank with an absorptiometer to measure the resist stripping stock solution, hydroxylamine solution and pure water A water concentration detecting / liquid replenishing means (hereinafter, referred to as a third replenishing means) for replenishing at least one of the water to the resist stripping treatment tank is provided (see FIG. 3).

Further, the resist stripping liquid management apparatus of the present invention detects the hydroxylamine concentration of the resist stripping liquid in the resist stripping tank with an absorptiometer and detects at least one of a resist stripping solution, a hydroxylamine solution and pure water. Second replenishing means for replenishing the resist stripping processing tank with,
A third replenishing means for detecting the water concentration of the resist stripping solution in the resist stripping tank with an absorptiometer and refilling the resist stripping tank with at least one of a resist stripping solution, a hydroxylamine solution and pure water. (See FIGS. 4 and 6).

Further, the resist stripping liquid management apparatus of the present invention detects the dissolved resist concentration of the resist stripping liquid in the resist stripping tank with an absorptiometer, and prepares the resist stripping stock solution, hydroxylamine solution, pure water and preliminarily prepared water. First replenishing means for supplying at least one of the new resist stripping solution to the resist stripping tank, and a resist stripping stock solution and a hydroxylamine solution by detecting the hydroxylamine concentration of the resist stripping solution in the resist stripping tank with an absorptiometer. And a second replenishing means for replenishing at least one of the pure water and the resist stripping tank with a resist stripping solution, a hydroxylamine solution and a pure solution by detecting the water concentration of the resist stripping solution in the resist stripping tank with an absorptiometer. A third replenishing means for replenishing at least one of the water to the resist stripping tank. Are (see FIG. 5).

Examples of the resist stripping solution include a dimethyl sulfoxide stock solution, an N-methylpyrrolidone stock solution, a diglycol stock solution, a mixed stock solution of an alkanolamine and a glycol ether solvent, or pure water or various additives. A stock solution to which is added is used. Examples of the alkanolamine include monoethanolamine, diethanolamine, triethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, aminoethylethanolamine, N-methyl-
Examples thereof include N, N-diethanolamine, N, N-dibutylethanolamine, N-methylethanolamine, and 3-amino-1-propanol. As the glycol ether solvent, butyl diglycol,
Examples thereof include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monopropyl ether. Examples of the various additives include catechol, a reducing agent, a metal anticorrosive, and a chelating agent.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the drawings. However, the shapes of the components described in these embodiments, the relative arrangement thereof, and the like are not intended to limit the scope of the present invention to them unless otherwise specified, and are merely illustrative examples. It's just FIG. 1 is a system diagram showing a resist stripping liquid management device according to a first embodiment of the present invention. Reference numerals 1 to 13 in the drawing denote equipment constituting a conventional resist stripping apparatus. That is, the conventional resist stripping apparatus includes a resist stripping processing tank 1 for storing a resist stripping liquid, an overflow tank 2, a liquid level meter 3, a resist stripping chamber hood 4, a resist stripping liquid spray 7, and a resist stripping liquid spray. Pump 8, a filter 9 for removing fine particles and the like in the resist stripper, a roller conveyor 5 on which a substrate is mounted and moves while stripping the resist, a substrate 6, and cleaning of the resist stripper. Circulation pump 11 for stirring, filter 13 for removing fine particles,
And piping such as N ₂ gas and pure water.

In accordance with the present invention, the equipment attached to the resist stripping apparatus includes an absorptiometer 15 for detecting hydroxylamine concentration, a liquid discharge pump 19, a resist stripping stock solution supply can 20, and a resist stripping stock solution supply. Flow control valve 24, hydroxylamine solution supply can 21, flow control valve 25 for supplying hydroxylamine solution, resist stripping new liquid supply can 22, flow control valve 26 for supplying new resist stripping liquid, flow control for pure water supply There are a valve 27, piping for connecting these devices, electric instrumentation, air instrumentation, and the like. The replenishing solution is a stock solution for resist stripping, a hydroxylamine solution, a new solution for resist stripping, and pure water, but not all of which are necessary. The composition of the resist stripping solution, the degree of concentration change, equipment conditions, operating conditions, and replenishment An optimum replenisher and supply device are selected depending on conditions for obtaining the liquid. The same applies to FIGS. 2 to 6 described later.
As the hydroxylamine solution, an aqueous solution of hydroxylamine (for example, a 50% aqueous solution) is used, but a mixed solution of hydroxylamine and another solvent, a 100% hydroxylamine solution, or the like can also be used.

The amount of liquid stored in the resist stripping tank 1 is sufficient as long as a required amount of the resist stripping liquid spray 7 can be supplied, but it is necessary to control it from the viewpoint of process stability. As shown in FIG. 1, normally, the liquid level of the resist stripping tank 1 is operated at a position near a liquid level meter below an overflow. The liquid level meter 3 detects a drop in the liquid level due to a natural decrease due to the liquid being attached to the substrate and being taken out of the system during the resist stripping process, or forcing the liquid whose resist stripping performance has deteriorated. The purpose is to detect a decrease in the liquid level when the liquid is discharged and to control the liquid amount in the resist stripping tank 1 within a certain range.
Here, the resist stripping deterioration liquid flows down to the drain pipe by operating the discharge pump 19. In some cases, the deteriorated liquid is directly drawn out of the system without passing through the drain pipe.

A stock solution 20 for supplying a stock solution for resist removal, for example, a predetermined concentration mixture of monoethanolamine (hereinafter abbreviated as MEA) and butyl diglycol (hereinafter abbreviated as BDG) is connected to a pipe 23. Is pressurized to 1-2 kgf / cm ² with N ₂ gas from the nozzle, and is fed by opening the resist stripping solution flow rate control valve 24. The hydroxylamine solution supply can 21 for storing the hydroxylamine solution is supplied with N ₂ gas from a pipe 23 to 1-2 kgf /
It has been pressurized to cm ² and is pumped by opening the hydroxylamine solution flow control valve 25. The new resist removing liquid supply can 22 for storing the new resist removing liquid is pressurized to 1 to ² kgf / cm ² with N ₂ gas from a pipe 23, and is fed by opening the resist removing new liquid flow rate control valve 26. You. The pure water is connected to a branch pipe from the existing pipe, and is sent by opening the pure water flow control valve 27. These replenishing liquids are sent by automatically adjusting the respective valves, merge in the pipe 28, flow into the pipe 12, and enter the resist stripping tank 1 while being mixed with the circulating flow. It is also possible to connect these replenishers to the pipeline 12 or the resist stripping tank 1 without merging them.

A line 1 for spraying a resist stripping solution
The sample liquid is introduced into the absorptiometer 15 installed online at 0 and the absorbance is continuously measured through the pipe 14, and the measured liquid is returned from the pipe 18 to the pipe 10.

FIG. 2 is an apparatus system diagram showing a second embodiment of the present invention. In this embodiment, an absorptiometer 15 for detecting the concentration of hydroxylamine and an absorptiometer 16 for detecting the concentration of the dissolved resist (for example, both units are integrally configured) are installed in the conduit 10 for spraying the resist stripping solution online. At this time, the sample liquid is introduced from the pipe 14 and the respective absorbances are continuously measured, and the measured liquid is returned from the pipe 18 to the pipe 10. The absorption photometer 15 and the absorption photometer 1
The sample liquid can be introduced into the absorptiometer 15 and the absorptiometer 16 using a separate circulating pump for measurement or using a circulating pump for measurement. Also, as shown in FIG.
Normally, the liquid level of the resist stripping tank 1 is operated near the position of the overflow weir. When fresh replenishing liquid is supplied, the deteriorated resist stripping liquid overflows from the overflow weir and is automatically discharged. Note that the discharge pump 19 is not necessarily required, and a valve may be provided instead of the discharge pump 19. Other configurations are the same as those in FIG.

FIG. 3 is an apparatus system diagram showing a third embodiment of the present invention. In the present embodiment, an absorptiometer 16 for detecting the dissolved resist concentration and an absorptiometer 17 for detecting the water concentration (for example, both units are integrally configured) are provided on-line in the line 10 for spraying the resist stripper. Then, the sample liquid is introduced from the pipe 14, and the respective absorbances are continuously measured, and the measured liquid is returned from the pipe 18 to the pipe 10. As shown in FIG. 3, the liquid level of the resist stripping tank 1 is normally operated near the overflow weir. Other configurations are the same as those in FIGS.

FIG. 4 is an apparatus system diagram showing a fourth embodiment of the present invention. In the present embodiment, an absorptiometer 15 for detecting the concentration of hydroxylamine and an absorptiometer 17 for detecting the concentration of water (for example, both units are integrally configured) are installed on line 10 for spraying the resist stripping solution on-line. Then, the sample liquid is introduced from the pipe 14, and the respective absorbances are continuously measured, and the measured liquid is returned from the pipe 18 to the pipe 10. Also, as shown in FIG. 4, the liquid level of the resist stripping tank 1 is usually operated near the position of the overflow weir. Other configurations are the same as those in FIGS.

FIG. 5 is an apparatus system diagram showing a fifth embodiment of the present invention. In the present embodiment, an absorptiometer 15 for detecting hydroxylamine concentration, an absorptiometer 16 for detecting dissolved resist concentration, and an absorptiometer for detecting water concentration, which are installed online in a line 10 for spraying a resist stripping liquid. 17 (for example, three units are integrally configured),
The sample liquid is introduced from 4 and the respective absorbances are continuously measured, and the measured liquid is returned from the pipe 18 to the pipe 10.
In addition, as shown in FIG. 5, the liquid level of the resist stripping tank 1 is normally operated near the overflow weir. Other configurations are the same as those in FIGS.

FIG. 6 is an apparatus system diagram showing a sixth embodiment of the present invention. The present embodiment is a cassette processing system, in which a cassette 33 is loaded and unloaded by a loader instead of the roller conveyor 5 in FIG. 4, and the cassette 33 has a substrate 34 (for example, 20 silicon wafers for semiconductor manufacturing). Are arranged. In this embodiment,
Spectrophotometer 1 for online detection of hydroxylamine concentration installed in conduit 10 for resist stripper spray
The sample liquid is introduced from a pipe 14 into an absorption spectrophotometer 17 (for example, both instruments are integrated) for detecting the water concentration, and the respective absorbances are continuously measured.
Is returned to the pipeline 10. As shown in FIG. 6, the liquid level of the resist stripping tank 1 is usually operated near the overflow weir. Other configurations are the same as those in FIG.

Next, a control system of the apparatus according to the embodiment shown in FIGS. The liquid level meter 3 and the liquid level of the resist stripping tank 1, the hydroxylamine concentration of the absorption photometer 15 and the resist stripping solution, the dissolved resist concentration of the absorption photometer 16 and the resist stripping solution, the absorption photometer 17 and the resist stripping solution The water concentrations essentially function as independent functions, but the present invention is characterized in that two or more of them function in a mutually complementary relationship. First, the target value of the hydroxylamine concentration of the resist stripping solution, the target value of the water concentration of the resist stripping solution, and the concentration limit value of the dissolved resist concentration necessary for quality control of the product substrate are determined in advance based on the operation results or calculations. It must be set for each controller.

Hereinafter, MEA and BD are used as a resist stripper.
An example using a solution in which G, hydroxylamine and pure water are mixed will be described. Normally, the water concentration of the resist stripping solution maintained at a constant temperature of about 65 ° C. decreases with an increase in the number of substrates to be processed, mainly due to evaporation of water accompanying the purge N ₂ gas. The resist stripping performance is deteriorated. For this reason, it is necessary to control the water concentration to a predetermined target value, for example, 24.0 ± 1.0%. Conventionally, the degree of deterioration of the resist stripper has been determined based on experience based on correlation with the number of processed substrates or chemical analysis, but it has been difficult to quickly and accurately determine the degree of deterioration.

The inventor of the present invention examined the relationship between the water concentration of the resist stripping solution and the absorbance by experiments, and it was found that the wavelength of the absorbance measured was 950 nm to 1010 nm in the near infrared region, and the sensitivity was around 976 nm. Large and particularly good. The measurement wavelength is selected from the near-infrared region, and is properly used depending on the types and concentrations of the stripping solution and the resist.
As shown in FIG. 7, the absorbance at the measurement wavelength λ = 976 nm and the water concentration were in a highly linear relationship, and it was confirmed that the water concentration could be accurately measured by detecting the absorbance. As shown in FIGS. 3, 4, 5, and 6, the absorptiometer 17 (integral with or separate from the absorptiometer 15 and / or the absorptiometer 16, which is installed online in Is equipped with various compensation functions and an absorbance controller 32 for minimizing measurement errors. The measured absorbance value of the sample solution introduced from the pipe 10 is input to the absorbance controller 32 and at least one of the resist stripping solution, hydroxylamine solution and pure water is output by an output signal so that the value becomes the target value. These are automatically controlled by flow control valves 24, 25 and 27, respectively, to supply water until the water concentration is adjusted to the target value.

Further, the hydroxylamine concentration of the resist stripping solution is lower by boiling point than water, and thus decreases by azeotropic evaporation with water, so that the resist stripping performance of the resist stripping solution deteriorates. Therefore, the hydroxylamine concentration is set to a predetermined target value, for example, 6.0 ± 1.0%.
Need to be managed. Conventionally, the degree of deterioration of the resist stripper has been determined based on experience based on correlation with the number of processed substrates or chemical analysis, but it has been difficult to quickly and accurately determine the degree of deterioration.

The inventor of the present invention examined the relationship between the hydroxylamine concentration of the resist stripping solution and the absorbance by experiment, and measured the absorbance wavelength from 1050 nm in the near infrared region to 1050 nm.
90 nm range is appropriate, and the influence of other components is small.
The sensitivity was large near 074 nm, and particularly good. In addition,
The measurement wavelength is selected from the near-infrared region, and is used properly according to the types and concentrations of the stripping solution and the resist. As shown in FIG. 8, the absorbance at the measurement wavelength λ = 1070 nm and the hydroxylamine concentration have a high linear relationship, and it was confirmed that the hydroxylamine concentration can be accurately measured by detecting the absorbance. As shown in FIGS. 1, 2, 4, 5, and 6, the absorptiometer 15 installed on-line in the conduit 10 has various compensation functions for minimizing measurement errors and an absorptivity controller 30. I have. The measured absorbance value of the sample solution introduced from the pipe 10 is input to the absorbance controller 30 and at least one of the resist stripping solution, hydroxylamine solution and pure water is output by the output signal so that the value becomes the target value. These are automatically supplied by flow control valves 24, 25, and 27, respectively, and replenished until the hydroxylamine concentration is adjusted to a target value.

Deterioration of the resist stripping performance depends not only on the above-mentioned water concentration and hydroxylamine concentration but also on the dissolved resist concentration. The resist stripping liquid for substrate processing is taken out of the resist stripping tank 1 by the liquid feed pump 8 and is circulated through the resist stripping liquid spray 7, so that the dissolved substance gradually concentrates in the resist stripping liquid.
The main dissolved substance is a resist, and as shown in an operation example in FIG. 9, the resist is concentrated due to an increase in the number of processed substrates, and as a result, the resist stripping performance is significantly deteriorated. Conventionally, this change in concentration has not been measured in real time, and the resist stripping performance has not been managed at a constant value. Note that FIG.
Is a graph in the case where a solution composed of MEA, BDG, hydroxylamine and pure water is used as a resist stripping solution. That is, although the number of processed substrates is used as a degradation index, the number of processed resists is determined because the shape of the substrate, the thickness of the resist, and the resist peeling pattern are not constant, and the amount of dissolved resist for each type of substrate is different. It is impossible to make it a factor.

The present inventor focused on measuring the resist concentration in relation to the absorbance from the study of the contamination state due to the concentration of the resist in the resist stripping solution, and obtained the results shown in FIGS. 10 and 11 through experiments. Obtained. As shown in FIG. 11, the dissolved resist concentration and the absorbance are in a highly linear relationship without being affected by the moisture concentration and the like, and the resist stripping performance limit value can be determined by the dissolved resist concentration itself, regardless of the number of processed substrates. . As a proper measurement wavelength of the dissolved resist concentration, λ = 560 nm was used. The measurement wavelength ranges from 400 nm in the visible light region to 800 nm in the near infrared region.
It is selected from the range of nm, and can be used depending on the type and concentration of the resist.

As shown in FIGS. 2, 3, and 5, the absorptiometer 16 installed on-line in the conduit 10 has various compensation functions and an absorbance controller 31 for minimizing measurement errors. . The absorptiometer 16 continuously measures the dissolved resist concentration of the resist stripping solution to detect that the deterioration limit value has been exceeded, and based on the output signal of the absorbance controller 31, the resist stripping stock solution, hydroxylamine solution, pure water and pre-mixed At least one of the new resist stripping liquids,
Replenishment is performed until the concentration of the dissolved resist is adjusted to the target value by automatically controlling each of 25, 26, and 27. As a result, a fresh replenishing solution is replenished, and the dissolved resist concentration is diluted to a deterioration limit value, thereby recovering the resist peeling performance.

As shown in FIG. 1, the liquid level gauge 3 is connected to a liquid level controller 29 (the liquid level controller 29 is shown only in FIG. 6), the resist stripper adheres to the substrate and is taken out in the subsequent process, and the decrease in the liquid level due to the natural decrease is detected, and the resist stripper is output by the output signal of the liquid level controller 29. Undiluted solution, hydroxylamine solution,
At least one of pure water and a previously prepared resist stripping solution is automatically controlled by flow control valves 24, 25, 26 and 27, respectively, to recover the liquid level. as a result,
The fresh stripping solution is replenished and the dissolved resist concentration is diluted, so that the resist stripping performance is restored.

Here, the functional relationship of the control system intended by the device of the first embodiment shown in FIG. 1 will be described. This embodiment is mainly applied to a case where a stripper having a low water concentration of the resist stripper is used, or a case where the control of the hydroxylamine concentration is important in the resist stripping process.

When the resist stripping tank 1 is empty, it is detected that the liquid level meter 3 is empty, and the output signal of the liquid level controller 29 is used to remove the resist stripping solution.
At least one of a hydroxylamine solution, pure water, and a new resist stripping solution prepared in advance is supplied to the flow control valves 24, 2
Liquids are automatically controlled by 5, 26, and 27, respectively, and the liquid level is set to a set position. Normally, a new resist stripping solution prepared in advance by the output signal of the liquid level controller 29 is sent. The output signals of the liquid level controller 29 allow the flow rate control valves 24, 25, and 25 to be adjusted so that the unstripped resist stripping solution, hydroxylamine solution, and pure water have substantially the same concentrations as the new stripped resist solution. The liquid may be sent by adjusting the valve opening degree by 27.

Next, the absorptiometer 15 continuously measures the absorbance of the bath stripping solution, and at least one of the resist stripping solution, hydroxylamine solution and pure water is supplied with an appropriate minute flow rate according to the output signal of the absorbance controller 30. In, the liquid is sent by adjusting the valve opening by at least one of the flow control valves 24, 25, and 27, and is automatically controlled to reach the target value of the hydroxylamine concentration.

Next, when the resist stripping process is started, a decrease in the water concentration, a decrease in the hydroxylamine concentration, a reduction in the amount of the liquid due to the removal of the substrate, and a concentration of the dissolved resist proceed. In the case of a decrease in the concentration of hydroxylamine, the absorptiometer 15 continuously measures the absorbance of the resist stripping solution, and the output signal of the absorbance controller 30 allows the hydroxylamine solution to open at an appropriate minute flow rate by the flow control valve 25 at an appropriate small flow rate. Is adjusted, and the liquid is automatically controlled so that the hydroxylamine concentration reaches a target value. In addition, in the case of a decrease in the concentration of hydroxylamine, the water concentration also decreases. Therefore, the pure water is supplied by adjusting the valve opening degree by the flow control valve 27 at an appropriate minute flow rate by the output signal of the absorbance controller 30, and An automatic control mechanism for providing a moisture concentration in a range may be added.

In the case of reducing the amount of liquid by taking out the substrate,
The liquid level meter 3 detects the lowered liquid level, and a new resist stripping liquid prepared in advance is sent from the flow rate control valve 26 based on the output signal of the liquid level controller 29. Instead of sending the new resist stripping solution, the output signal of the liquid level controller 29 is used to adjust the flow rate of the resist stripping solution, hydroxylamine solution and pure water at an appropriate flow rate ratio so as to have a predetermined concentration. The liquid may be sent by adjusting the valve opening degree by the control valves 24, 25, and 27.

Next, the functional relationship of the control system intended by the device of the second embodiment shown in FIG. 2 will be described. This embodiment is mainly applied to a case where a stripper having a low water concentration of the resist stripper is used, or a case where the control of the hydroxylamine concentration is important in the resist stripping process. When the resist stripping tank 1 is empty, for example, at least one of a resist stripping stock solution, a hydroxylamine solution, pure water, and a pre-mixed resist stripping solution is supplied to the flow control valves 24 and 25 by manual operation. ,
The liquids are fed by 26 and 27, respectively, to bring the liquid level to a predetermined position. Usually, a new resist stripping solution prepared in advance by manual operation is sent. In addition, the resist stripping stock solution, hydroxylamine solution, and pure water were fed by adjusting the valve opening degrees by the flow rate control valves 24, 25, and 27 at an appropriate flow rate ratio so as to have a concentration substantially equal to that of the new resist stripping solution. May be. Next, the absorptiometer 15 continuously measures the absorbance of the building bath resist stripping solution, and according to the output signal of the absorbance controller 30, at least one of the resist stripping solution, hydroxylamine solution and pure water has an appropriate minute flow rate,
The liquid is sent by adjusting the valve opening by at least one of the flow control valves 24, 25, and 27, and is automatically controlled to a target value of the hydroxylamine concentration.

With the resist stripping process, a decrease in the water concentration, a decrease in the hydroxylamine concentration, a reduction in the amount of liquid due to the removal of the substrate, and a concentration of the dissolved resist proceed. In the case of a decrease in the hydroxylamine concentration, the absorbance meter 15 continuously measures the absorbance of the resist stripping solution, and the absorbance controller 30
The hydroxylamine solution is sent by adjusting the valve opening by the flow control valve 25 at an appropriate minute flow rate according to the output signal of (1), and is automatically controlled so that the hydroxylamine concentration reaches the target value. In addition, in the case of a decrease in the concentration of hydroxylamine, the water concentration also decreases. Therefore, the pure water is supplied by adjusting the valve opening degree by the flow control valve 27 at an appropriate minute flow rate by the output signal of the absorbance controller 30, and An automatic control mechanism for providing a moisture concentration in a range may be added.

When the concentration of the dissolved resist reaches the deterioration limit value due to concentration, the absorptiometer 16 continuously measures the dissolved resist concentration of the resist stripping solution and detects that the concentration exceeds the deterioration limit value. According to the output signal of 31, a new resist stripping solution prepared in advance is sent from the flow control valve 26. Instead of sending the new resist stripping solution, the flow rate adjusting valve is controlled by an output signal of the absorbance controller 31 at an appropriate flow ratio so that the resist stripping solution, hydroxylamine solution and pure water have a predetermined blended concentration. 24, 25,
The liquid may be sent by adjusting the valve opening degree by using 27. As a result, a fresh replenishing solution is replenished, and the dissolved resist concentration is diluted to a deterioration limit value, thereby recovering the resist peeling performance. The liquid level is near the position of the overflow weir, and when the replenishing liquid is replenished, the deteriorated resist stripper overflows from the overflow weir.
When the amount of liquid is reduced by taking out the substrate, the liquid level is slightly lower than the position of the overflow weir.

Next, the functional relationship of the control system intended by the device of the third embodiment shown in FIG. 3 will be described. The present embodiment is mainly applied to a case where a stripper having a high water concentration of the resist stripper is used, or a case where the control of the water concentration is important in the resist stripping process. When the resist stripping tank 1 is empty, for example, at least one of a resist stripping stock solution, a hydroxylamine solution, pure water, and a pre-mixed resist stripping solution is supplied to the flow control valves 24 and 25 by manual operation. , 26, and 27, respectively, to bring the liquid level to a predetermined position. Normally,
A new resist stripping solution prepared in advance by manual operation is sent. The flow rate control valves 24, 25, and the resist stripping solution, the hydroxylamine solution, and the pure water were adjusted at an appropriate flow rate ratio so as to have a concentration substantially equal to that of the new resist stripping solution.
The liquid may be sent by adjusting the valve opening degree by 27. Then
The absorptiometer 17 continuously measures the absorbance of the bath stripping resist, and at least one of the resist stripping solution, hydroxylamine solution and pure water is adjusted to a flow rate control valve at an appropriate minute flow rate by the output signal of the absorbance controller 32. 24, 2
The liquid is fed by adjusting the valve opening by at least one of 5 and 27, and is automatically controlled to reach the target moisture concentration.

With the resist stripping process, a decrease in the water concentration, a decrease in the hydroxylamine concentration, a reduction in the amount of the liquid due to the removal of the substrate, and a concentration of the dissolved resist proceed. In the case of a decrease in the water concentration, the absorbance photometer 17 continuously measures the absorbance of the resist stripping solution, and the output signal of the absorbance controller 32 adjusts the valve opening by the flow control valve 27 at an appropriate minute flow rate of pure water. The liquid is then sent and is automatically controlled to reach the target moisture concentration. In the case of a decrease in the water concentration, the concentration of the hydroxylamine also decreases.
An automatic control mechanism may be added so that the hydroxylamine solution is sent by adjusting the valve opening by the flow control valve 25 at an appropriate minute flow rate according to the output signal of the above, and the hydroxylamine concentration falls within a predetermined range.

When the concentration of the dissolved resist reaches the deterioration limit value due to concentration, the absorptiometer 16 continuously measures the dissolved resist concentration of the resist stripping solution and detects that the concentration exceeds the deterioration limit value. According to the output signal of 31, a new resist stripping solution prepared in advance is sent from the flow control valve 26. Instead of sending a new resist stripping solution, the flow rate adjusting valve is controlled by an output signal of the absorbance controller 31 at an appropriate flow ratio so that the resist stripping solution, hydroxylamine solution and pure water have a predetermined compounding concentration. 24, 25,
The liquid may be sent by adjusting the valve opening degree by using 27. As a result, a fresh replenishing solution is replenished, and the dissolved resist concentration is diluted to a deterioration limit value, thereby recovering the resist peeling performance. The liquid level is near the position of the overflow weir, and when the replenishing liquid is replenished, the deteriorated resist stripper overflows from the overflow weir.
When the amount of liquid is reduced by taking out the substrate, the liquid level is slightly lower than the position of the overflow weir.

Next, the functional relationship of the control system intended by the device of the fourth embodiment shown in FIG. 4 will be described. The present embodiment is mainly applied to a case where a substrate having a small amount of resist dissolved therein is processed, or a case where the amount of the replenishing solution is large and the concentration of the dissolved resist does not increase. When the resist stripping bath 1 is empty, for example, at least one of a resist stripping stock solution, a hydroxylamine solution, pure water, and a pre-mixed resist stripping solution is supplied to the flow control valves 24 and 25 by manual operation. , 26, and 27, respectively, to bring the liquid level to a predetermined position. Usually, a new resist stripping solution prepared in advance by manual operation is sent.
In addition, the resist stripping stock solution, hydroxylamine solution and pure water were supplied at an appropriate flow ratio so that the valve opening was adjusted by the flow rate control valves 24, 25, and 27 so that the concentrations were substantially the same as those of the new resist stripping solution. May be. Then, the absorptiometer 15 continuously measures the absorbance of the building bath resist stripping solution, and at least one of the resist stripping solution, hydroxylamine solution and pure water is flowed at an appropriate minute flow rate by the output signal of the absorbance controller 30. The liquid is sent by adjusting the valve opening by at least one of the control valves 24, 25, and 27, and is automatically controlled so that the hydroxylamine concentration reaches a target value. Further, the absorptiometer 17 continuously measures the absorbance of the building bath resist stripping solution, and at least one of the resist stripping solution, the hydroxylamine solution and the pure water flows at an appropriate minute flow rate according to the output signal of the absorbance controller 32. The liquid is sent by adjusting the valve opening by at least one of the control valves 24, 25, and 27, and is automatically controlled to reach the target moisture concentration.

With the resist stripping process, a decrease in the water concentration, a decrease in the hydroxylamine concentration, a reduction in the amount of liquid due to the removal of the substrate, and a concentration of the dissolved resist proceed. In the case of a decrease in the water concentration, the absorbance photometer 17 continuously measures the absorbance of the resist stripping solution, and the output signal of the absorbance controller 32 adjusts the valve opening by the flow control valve 27 at an appropriate minute flow rate of pure water. The liquid is then sent and is automatically controlled to reach the target moisture concentration. In the case of a decrease in the concentration of hydroxylamine, the absorptiometer 15 continuously measures the absorbance of the resist stripping solution, and the output signal of the absorbance controller 30 allows the hydroxylamine solution to open at an appropriate minute flow rate by the flow control valve 25 at an appropriate small flow rate. Is adjusted, and the liquid is automatically controlled so that the hydroxylamine concentration reaches a target value.

Next, the functional relationship of the control system intended by the device of the fifth embodiment shown in FIG. 5 will be described. This embodiment is mainly applied to a case where all of the moisture concentration, hydroxylamine concentration and dissolved resist concentration are important management items. When the resist stripping tank 1 is empty, for example, at least one of a resist stripping solution, a hydroxylamine solution, pure water and a pre-mixed resist stripping solution is supplied to the flow control valve 2 by manual operation.
The liquids are sent by 4, 25, 26 and 27, respectively, and the liquid level is set to a predetermined position. Usually, a new resist stripping solution prepared in advance by manual operation is sent. In addition, the resist stripping stock solution, hydroxylamine solution and pure water were supplied at an appropriate flow ratio so that the valve opening was adjusted by the flow rate control valves 24, 25, and 27 so that the concentrations were substantially the same as those of the new resist stripping solution. May be. Next, the absorptiometer 15 continuously measures the absorbance of the building bath resist stripping solution, and the absorbance controller 3
With the output signal of 0, at least one of the resist stripping solution, hydroxylamine solution and pure water is sent at an appropriate minute flow rate by adjusting the valve opening by at least one of the flow control valves 24, 25 and 27, It is automatically controlled to the target value of hydroxylamine concentration. Further, the absorptiometer 17 continuously measures the absorbance of the building bath resist stripping solution, and at least one of the resist stripping solution, the hydroxylamine solution and the pure water flows at an appropriate minute flow rate according to the output signal of the absorbance controller 32. Control valves 24, 25
And the liquid is sent by adjusting the valve opening degree by at least one of the steps (a) and (b), and is automatically controlled so that the water concentration becomes the target value.

With the resist stripping process, a decrease in the water concentration, a decrease in the hydroxylamine concentration, a reduction in the amount of liquid due to the removal of the substrate, and a concentration of the dissolved resist proceed. In the case of a decrease in the water concentration, the absorbance photometer 17 continuously measures the absorbance of the resist stripping solution, and the output signal of the absorbance controller 32 adjusts the valve opening by the flow control valve 27 at an appropriate minute flow rate of pure water. The liquid is then sent and is automatically controlled to reach the target moisture concentration. In the case of a decrease in the concentration of hydroxylamine, the absorption photometer 15 continuously measures the absorbance of the resist stripping solution, and the output signal of the absorbance controller 30 allows the hydroxylamine solution to be opened by the flow control valve 25 at an appropriate minute flow rate. The liquid is sent at an adjusted degree, and is automatically controlled to reach the target hydroxylamine concentration.

When the concentration of the dissolved resist reaches the deterioration limit value due to concentration, the absorptiometer 16 continuously measures the dissolved resist concentration of the resist stripping solution and detects that the concentration exceeds the deterioration limit value. According to the output signal of 31, a new resist stripping solution prepared in advance is sent from the flow control valve 26. Instead of sending a new resist stripping solution, the flow rate adjusting valve is controlled by an output signal of the absorbance controller 31 at an appropriate flow ratio so that the resist stripping solution, hydroxylamine solution and pure water have a predetermined compounding concentration. 24, 25,
The liquid may be sent by adjusting the valve opening degree by using 27. As a result, a fresh replenishing solution is replenished, and the dissolved resist concentration is diluted to a deterioration limit value, thereby recovering the resist peeling performance. The liquid level is near the position of the overflow weir, and when the replenishing liquid is replenished, the deteriorated resist stripper overflows from the overflow weir.
When the amount of liquid is reduced by taking out the substrate, the liquid level is slightly lower than the position of the overflow weir.

Next, an apparatus according to a sixth embodiment shown in FIG. 6 will be described. The present embodiment is mainly applied to a case where a silicon wafer having a small amount of resist dissolved therein is generally processed in a cassette. The functional relationship of the control system is the same as in FIG.
The present inventor can easily recover the resist stripping performance, continuously operate, and reduce the amount of the resist stripping liquid to be used comprehensively by operating the results based on the respective control functions in a mutually complementary relationship as described above. Experiments have shown that this can be achieved.

Next, for conceptual understanding, FIGS. 12 to 17 show a comparison of the effects of the operation patterns of the present invention and the conventional method. In the conventional method, as shown in FIG. 12, the water concentration at the start is, for example, 25.0 wt%, and the concentration decreases as time passes, for example, 10.0 wt% (chemical analysis value).
Was reached when the liquid reached. In this case, the temporal change of the water concentration was saw-toothed, and the range of the change occurred, so that the resist stripping performance was not constant. However, using the apparatus of the present invention, as shown in FIG.
And the resist stripping performance is stable,
There is no need to change the liquid.

Further, in the conventional method, as shown in FIG. 14, the hydroxylamine concentration at the start is, for example, 7.0 wt.
%, The liquid exchange was performed when the concentration decreased with time and reached, for example, 2.0 wt% (chemical analysis value). In this case, the change with time of the hydroxylamine concentration became a saw-tooth shape, and the change range of the concentration occurred, so that the resist stripping performance was not constant. However, when the apparatus of the present invention is used, as shown in FIG. 15, the concentration of hydroxylamine is constant at, for example, 6.0 ± 1.0 wt% even after a lapse of time. There is no need for replacement work.

Further, in the conventional method, as shown in FIG. 16, the dissolved resist concentration increases with the elapse of time from the start, and this concentration reaches a region value that reduces the resist stripping performance, and the liquid exchange is performed. . In this case, FIG.
As shown in FIG. 6, the temporal change of the dissolved resist concentration was saw-toothed, and the range of change of the dissolved resist concentration occurred, so that the resist stripping performance was not constant. However, when the apparatus of the present invention is used, as shown in FIG. 17, the concentration of the dissolved resist becomes constant after a lapse of a certain time, so that the resist stripping performance is stabilized and the necessity of the liquid exchange work is eliminated. In the above, the present invention is not limited to the case where a solution of MEA, BDG, hydroxylamine and pure water is used as a resist stripping solution, but a solution of an organic alkali, hydroxylamine and pure water, and an organic solvent as a resist stripping solution. A solution of hydroxylamine and pure water, a solution of organic alkali and organic solvent and hydroxylamine and pure water, a solution of organic alkali and organic solvent and hydroxylamine, pure water and additives, or almost all pure water in these solutions It is also applicable to the case where a solution that is not used is used.

[0057]

Since the present invention is configured as described above, it has the following effects. (1) By applying the present invention to a resist stripping step of a semiconductor or a liquid crystal substrate, the water concentration of the resist stripping solution can be reduced.
The concentration of hydroxylamine and / or the concentration of dissolved resist can be continuously monitored in real time, and the concentration can be controlled to a predetermined concentration with high accuracy. Therefore, the resist stripping performance of the substrate is also stabilized, and the yield of the product is greatly improved. In addition, it is possible to continuously operate for a long time at a stable liquid level while ensuring the safety that the resist stripping liquid does not have a flash point in a normal use state. (2) By using an inexpensive resist stripper to control its quality to a constant level and to enable continuous operation, there is no need for downtime for liquid replacement and wasteful disposal, and the amount of liquid used and stripper cost are reduced. The overall effect can be achieved, such as a drastic reduction in productivity, a significant improvement in productivity due to an increase in the operation rate, and a reduction in labor costs due to unmanned operation. (3) Since the hydroxylamine concentration is controlled to a predetermined value, silicon oxide, aluminum oxide, and the like adhering to the substrate can be reliably removed. Therefore, no peeling residue and no metal oxide residue are generated, and almost no defective products are generated. (4) When a conventional resist stripping solution combining an organic alkali and an organic solvent is used, a processing temperature of the substrate of about 80 ° C. is required. However, the apparatus of the present invention contains an appropriate amount of hydroxylamine. Therefore, the processing temperature of the substrate can be reduced to about 40 ° C. Therefore, it is possible to reduce damage to the base metal for forming the substrate and the semiconductor circuit.

[Brief description of the drawings]

FIG. 1 is a system diagram of a resist stripping liquid management device according to a first embodiment of the present invention.

FIG. 2 is a system diagram of a resist stripping liquid management device according to a second embodiment of the present invention.

FIG. 3 is a system diagram of a resist stripping liquid management device according to a third embodiment of the present invention.

FIG. 4 is a system diagram of a resist stripping liquid management device according to a fourth embodiment of the present invention.

FIG. 5 is a system diagram of a resist stripping liquid management device according to a fifth embodiment of the present invention.

FIG. 6 is a system diagram of a resist stripping liquid management device according to a sixth embodiment of the present invention.

FIG. 7 is a graph showing the relationship between the water concentration and the absorbance of the resist stripping solution according to the present invention.

FIG. 8 is a graph showing the relationship between hydroxylamine concentration and absorbance of a resist stripping solution according to the present invention.

FIG. 9 is a graph of an operation example showing the relationship between the number of resist stripping treatments and the dissolved resist concentration when a resist stripping solution according to the present invention is used.

FIG. 10 is a graph showing the relationship between the number of resist stripping treatments and the absorbance for measuring the concentration of dissolved resist according to the present invention.

FIG. 11 is a graph showing the relationship between the dissolved resist concentration of a resist stripping solution and the absorbance according to the present invention.

FIG. 12 is a graph showing the relationship between the water concentration and the operation time in the conventional method.

FIG. 13 is a graph showing a relationship between a water concentration and an operation time when the apparatus of the present invention is used.

FIG. 14 is a graph showing the relationship between hydroxylamine concentration and operation time in a conventional method.

FIG. 15 is a graph showing the relationship between hydroxylamine concentration and operation time when the apparatus of the present invention is used.

FIG. 16 is a graph showing the relationship between the dissolved resist concentration and the operation time in the conventional method.

FIG. 17 is a graph showing a relationship between a dissolved resist concentration and an operation time when the apparatus of the present invention is used.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Resist stripping processing tank 3 Liquid level meter 5 Roller conveyor 6 Substrate 7 Resist stripping liquid spray 8 Liquid feed pump 11 Circulation pump 15 Absorbance meter 16 Absorbance meter 17 Absorbance meter 19 Discharge pump 20 Resist stripping stock solution supply can 21 Hydroxyl Amine solution supply can 22 Resist stripping new solution supply can 24 Raw solution flow control valve 25 Hydroxylamine solution flow control valve 26 New solution flow control valve 27 Pure water flow control valve 29 Liquid level controller 30 Absorbance controller 31 Absorbance controller 32 Absorbance controller 33 Cassette 34 Substrate (silicon wafer)

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Osamu Ogawa 5-1, Nihonbashi-Kofuna-cho, Chuo-ku, Tokyo Nagase & Co., Ltd. (72) Yoshitaka Nishijima 236 Nakai, Tatsuno-cho, Tatsuno-shi, Hyogo Nagase Electronics Co., Ltd. Hyogo Plant (72) Inventor Takahiro Takayama 236 Nakai, Tatsuno-cho, Tatsuno-shi, Hyogo Nagase Electronics Chemical Co., Ltd.

Claims (5)

[Claims] At least one of a stock solution for resist stripping, a hydroxylamine solution, pure water, and a newly prepared resist stripping solution is supplied to a resist stripping tank, and a liquid level adjusting mechanism is used to maintain a constant liquid level. Liquid supply means,
The hydroxylamine concentration of the resist stripping solution in the resist stripping tank is detected by an absorptiometer, and at least one of a resist stripping solution, a hydroxylamine solution and pure water is supplied to the resist stripping tank. A resist stripping liquid management device, comprising a replenishing means. 2. A resist stripping solution in a resist stripping tank, wherein the concentration of the dissolved resist in the resist stripping solution is detected by an absorptiometer, and at least one of a resist stripping stock solution, a hydroxylamine solution, pure water and a previously prepared resist stripping solution is prepared. A resist concentration detecting / liquid replenishing means for replenishing the peeling treatment tank,
Detects the hydroxylamine concentration of the resist stripping solution in the resist stripping tank with an absorptiometer and replenishes at least one of the resist stripping solution, hydroxylamine solution and pure water to the resist stripping tank. And a resist stripping liquid management apparatus. 3. A resist stripping solution in a resist stripping bath, wherein the concentration of the dissolved resist in the resist stripping solution is detected by an absorptiometer, and at least one of a resist stripping stock solution, a hydroxylamine solution, pure water and a previously prepared resist stripping solution is prepared. A resist concentration detecting / liquid replenishing means for replenishing the peeling treatment tank,
A moisture concentration detecting / liquid replenishing means for detecting the water concentration of the resist stripping solution in the resist stripping tank with an absorptiometer and supplying at least one of a resist stripping solution, a hydroxylamine solution and pure water to the resist stripping tank; A resist stripping liquid management device, comprising: 4. Hydroxylamine for detecting the hydroxylamine concentration of a resist stripping solution in a resist stripping tank with an absorptiometer and supplying at least one of a resist stripping solution, a hydroxylamine solution and pure water to the resist stripping tank. Concentration detecting / liquid replenishing means, and detecting the water concentration of the resist stripping solution in the resist stripping tank with an absorptiometer to supply at least one of the resist stripping solution, hydroxylamine solution and pure water to the resist stripping tank. A resist stripping liquid management device, comprising: a water concentration detecting / liquid replenishing means. 5. A method for detecting the concentration of a dissolved resist in a resist stripping solution in a resist stripping tank using an absorptiometer, and applying at least one of a resist stripping stock solution, a hydroxylamine solution, pure water and a pre-mixed resist stripping solution. A resist concentration detecting / liquid replenishing means for replenishing the peeling treatment tank,
Detects the hydroxylamine concentration of the resist stripping solution in the resist stripping tank with an absorptiometer and replenishes at least one of the resist stripping solution, hydroxylamine solution and pure water to the resist stripping tank. Means for detecting the water concentration of the resist stripping solution in the resist stripping tank with an absorptiometer and supplying at least one of a resist stripping solution, a hydroxylamine solution and pure water to the resist stripping tank; A resist stripping liquid management device, comprising a replenishing means.