JPH11126740A - Method and apparatus of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To coat a necessary minimum amount of resist by a resist coating apparatus to reduce semiconductor device manufacturing cost. SOLUTION: A chuck 2 for attractingly carrying a semiconductor wafer 1 thereon is provided with an angle adjusting function so that the wafer 1 is rotated as inclined, resist 6 is discharged onto the wafer 1, and the resist 6 is applied thereon and is efficiently spread up to a circumferential edge of the wafer 1 under the influence of a combination of centrifugal force and the weight of the material. Thereafter the wafer 1 is made horizontally and rotated to obtain a target film thickness.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method and an apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art FIG. 4 shows a conventional method for manufacturing a semiconductor device. As shown in FIG.
The semiconductor wafer 21 and the chuck 22 are rotated by a rotating shaft 23 by adsorbing the back surface of the chuck 1 to the chuck 22 by vacuum,
A resist discharge nozzle 24 is provided near the center of the semiconductor wafer 21.
Is discharged and applied. The applied resist 25 spreads in the peripheral direction of the semiconductor wafer 21 due to the centrifugal force generated by the rotation of the semiconductor wafer 21.

[0003]

However, in such a method of applying the resist 25 by rotating the semiconductor wafer 21, a centrifugal force is applied to the resist 25 being applied as shown in FIG. The bulge 26 of the portion occurs. That is, a state in which the thickness of the resist 25 is thicker in the peripheral portion than in the central portion of the semiconductor wafer 21 occurs. If the rotation of the semiconductor wafer 21 is continued to obtain a predetermined film thickness as shown in FIG. 4C, the bulge 26 around the resist becomes unnecessary resist 27 and scatters into the cup 28 and is discarded. As described above, in the conventional manufacturing method, at present, the resist is discharged in an amount of about 3 to 5 times the minimum amount of the resist required for forming the resist film on the semiconductor wafer 21.

Accordingly, an object of the present invention is to form a flat resist film on a semiconductor wafer with a necessary minimum amount of resist.

[0005]

According to a method of manufacturing a semiconductor device of the present invention, a step of vacuum-adhering a back surface of a semiconductor wafer to a chuck, and applying a resist on the semiconductor wafer by tilting and rotating the semiconductor wafer. And the step of returning the semiconductor wafer to a horizontal position and rotating the semiconductor wafer. It is easy to spread the resist around the semiconductor wafer by using the resist's own weight and the centrifugal force due to the rotation of the semiconductor wafer when applying the resist. Become.

Further, a method of manufacturing a semiconductor device according to the present invention
A step of vacuum-sucking the back surface of the semiconductor wafer to the chuck; a step of precessing the semiconductor wafer to apply a resist on the semiconductor wafer; and a step of returning the semiconductor wafer to a horizontal position and rotating the chuck. Since the resist is applied by the differential movement, the resist easily spreads to the peripheral portion of the semiconductor wafer by using the self-weight of the resist and the strong centrifugal force due to the precession movement.

Further, a method of manufacturing a semiconductor device according to the present invention
It is preferable to spray a gas or a mist-like liquid onto the semiconductor wafer, which can promote spreading of the applied resist.

[0008] Further, the apparatus for manufacturing a semiconductor device of the present invention comprises:
A chuck that supports and suctions the back surface of the semiconductor wafer, a rotation shaft that rotates the chuck, a resist discharge nozzle,
It has a cup installed so as to surround the semiconductor wafer and the chuck, the rotation axis is variable in the vertical direction about the fulcrum, and the angle is set according to the viscosity of the resist to move the resist around the semiconductor wafer. Can be applied to the part.

Further, the semiconductor device manufacturing apparatus of the present invention comprises:
A chuck that supports and suctions the back surface of the semiconductor wafer, a rotation shaft that rotates the chuck, a resist discharge nozzle,
It has a cup installed so as to surround the semiconductor wafer and the chuck, the rotating shaft is capable of precession movement, and the angle can be set according to the viscosity of the resist to apply the resist to the periphery of the semiconductor wafer. it can.

[0010]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a method of manufacturing a semiconductor device according to a first embodiment of the present invention. As shown in FIG. 1A, the back surface of a semiconductor wafer 1 is fixed to a chuck 2 by suction in a vacuum. Next, as shown in FIG. 1B, the chuck 2 is supported at the fulcrum 4 of the rotating shaft 3 so as to have an angle with the horizontal plane, and is rotated. 6 is applied and applied.
As a result, the resist 6 flows downward by its own weight, and a bulge 7 around the resist is generated at the lowermost portion. Semiconductor wafer 1
With only the centrifugal force acting radially from the center of the resist, the bulge 7 at the peripheral portion of the resist eventually jumps out of the semiconductor wafer 1. However, since the weight of the resist 6 works downward,
Depending on the position of the bulge 7 at the periphery of the resist in the surface of the semiconductor wafer 1, a force acts in the circumferential direction or the center direction,
The resist 6 can be efficiently spread over the entire surface of the semiconductor wafer 1 by preventing the bulge 7 at the periphery of the resist from jumping out of the semiconductor wafer 1.

Next, as shown in FIG.
Is returned to a horizontal position, and the semiconductor wafer 1 is rotated at a predetermined speed to obtain a resist 6 having a predetermined thickness. Conventionally, the bulge 7 at the peripheral portion of the resist becomes unnecessary resist and is collected and discarded by the cup 8. However, according to the present invention, a small amount of resist can be efficiently moved on the semiconductor wafer 1. The angle at which the chuck 2 is tilted and the number of rotations of the chuck 2 must be changed depending on the viscosity and fluidity of the material. For example, when the viscosity of the resist 6 is low, the angle is moderated and the rotation of the chuck 2 is 10 rotations per minute. It is necessary to increase the speed between about 300 rotations. If the coating is performed during extremely fast rotation, the resist 6 scatters into the cup due to the centrifugal force of the semiconductor wafer 1 and cannot be coated. In the present embodiment, 10
The resist 6 is applied so that the angle of the chuck 2 is 30 ° around the fulcrum 4 at the rotation speed per minute, and the angle of the chuck 2 is vertical. As a result, a predetermined film thickness can be obtained with a discharge amount of the resist 6 which is about 1/3 of the conventional one.

FIG. 2 shows a method of manufacturing a semiconductor device according to a second embodiment of the present invention. The chuck 2 is supported at the fulcrum 4 of the rotating shaft 3 so as to have an angle with the horizontal plane,
The point that the resist 6 is rotated and the resist 6 is discharged and applied to the vicinity of the center of the semiconductor wafer 1 from the resist discharge nozzle 5 is the same as in the first embodiment. However, when the resist 6 having a high viscosity is applied, the resist 6 does not flow in the lower direction only by its own weight. Therefore, a gas or mist-like liquid 10 is sprayed from the spray nozzle 9 onto the semiconductor wafer 1 and the resist 6.
To promote the flow of the resist 6. Here, the gas 10 blown to the semiconductor wafer 1 and the resist 6 is:
Inactive gas such as air or nitrogen, and mist-like liquid 1
Numeral 0 is scattered by heat treatment of an organic solvent or the like contained in the resist 6 and does not affect the subsequent processes.

FIG. 3 shows a method of manufacturing a semiconductor device according to a third embodiment of the present invention. As shown in FIG. 3A, the back surface of the semiconductor wafer 11 is fixed to the chuck 12 by vacuum suction. Next, as shown in FIG. 3B, the rotating shaft 13 of the chuck 12 is rotated by precession about the fulcrum 14 and rotated, and the resist 16 is discharged and applied to the vicinity of the center of the wafer 11 from the resist discharging nozzle 15. I do. As a result, the resist 16 flows downward due to its own weight and centrifugal force due to precession, and a bulge 17 around the resist is generated at the bottom. With only the centrifugal force acting radially from the center of the semiconductor wafer 11, the bulge 17 around the resist eventually jumps out of the semiconductor wafer 11. But resist 1
Since the weight of 6 acts in the downward direction, depending on the position of the bulge 17 at the peripheral portion of the resist in the surface of the semiconductor wafer 11, a force acts in the circumferential direction or the center direction, and the bulge 17 at the peripheral portion of the resist jumps out of the semiconductor wafer 11. To prevent As a result, the resist 16 can be efficiently spread over the entire surface of the semiconductor wafer 11.

Next, as shown in FIG.
The wafer 2 is returned to a horizontal position, and the semiconductor wafer 11 is rotated at a predetermined speed to obtain a resist 16 having a predetermined thickness. Conventionally, the bulge 17 at the periphery of the resist becomes unnecessary resist and becomes
However, if the present invention is used, a small amount of resist can be efficiently moved on the semiconductor wafer 11. The angle of inclination when precessing the chuck 12 is 1 ° or more and 90 ° or less about the fulcrum 14 with respect to the horizontal plane, and the rotation speed is between 10 and 300 rotations per minute. And, for example, when the viscosity of the resist 16 is low,
The rotation of the chuck 12 needs to be made faster by reducing the angle. If the coating is performed during extremely fast rotation, the resist 16 scatters into the cup due to the centrifugal force of the semiconductor wafer 11 and cannot be coated. In the present embodiment, the resist 16 is applied by performing precession movement at a rotation speed of 10 rotations / minute, the angle of the chuck 12 being vertical and the rotation shaft 13 being 15 ° around the fulcrum 14. Was. As a result, about 1 /
A predetermined film thickness could be obtained with the discharge amount of the third resist 16.

[0016]

As described above, according to the present invention, it is possible to form a resist film with a minimum amount of resist by changing the angle of a rotary chuck for supporting and sucking a wafer or by performing precession. And the manufacturing cost of the semiconductor device can be reduced.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a diagram illustrating a method for manufacturing a semiconductor device according to a second embodiment of the present invention;

FIG. 3 is a diagram illustrating a method for manufacturing a semiconductor device according to a third embodiment of the present invention;

FIG. 4 is a diagram showing a conventional method of manufacturing a semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 11 Semiconductor wafer 2, 12 Chuck 3, 13 Rotation axis 4, 14 Support point 5, 15 Resist discharge nozzle 6, 16 Resist 7, 17 Swelling of resist peripheral part 8, 18 Cup 9 Spray nozzle 10 Gas or mist-like liquid

Claims (5)

[Claims] A step of vacuum-adhering a back surface of the semiconductor wafer to a chuck; a step of rotating the semiconductor wafer at an angle to apply a resist on the semiconductor wafer;
Rotating the semiconductor wafer back horizontally. 2. A step of adsorbing the back surface of the semiconductor wafer to a chuck by vacuum, a step of precessing the semiconductor wafer and applying a resist on the semiconductor wafer, and returning the semiconductor wafer to a horizontal position and rotating the semiconductor wafer. And a method of manufacturing a semiconductor device. 3. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of spraying a gas or a mist-like liquid onto the semiconductor wafer when applying the resist on the semiconductor wafer. 4. A chuck for supporting and sucking a back surface of a semiconductor wafer, a rotating shaft for rotating the chuck, a resist discharge nozzle, and a cup installed so as to surround the semiconductor wafer and the chuck. An apparatus for manufacturing a semiconductor device, wherein a rotation axis is variable in angle with respect to a vertical direction about a fulcrum. 5. A chuck having a chuck for supporting and sucking a back surface of a semiconductor wafer, a rotating shaft for rotating the chuck, a resist discharge nozzle, and a cup provided so as to surround the semiconductor wafer and the chuck. An apparatus for manufacturing a semiconductor device, wherein a rotating shaft is capable of precession movement about a fulcrum.