JPH11126556A - Chip type fuse and manufacture of fuse thereof - Google Patents

Chip type fuse and manufacture of fuse thereof

Info

Publication number
JPH11126556A
JPH11126556A JP30801397A JP30801397A JPH11126556A JP H11126556 A JPH11126556 A JP H11126556A JP 30801397 A JP30801397 A JP 30801397A JP 30801397 A JP30801397 A JP 30801397A JP H11126556 A JPH11126556 A JP H11126556A
Authority
JP
Japan
Prior art keywords
fuse
layer
insulating substrate
fusible body
fusible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30801397A
Other languages
Japanese (ja)
Other versions
JP3105483B2 (en
Inventor
Toshiyuki Kawada
敏幸 河田
Makoto Ozaki
真 小崎
Ataru Nakamura
中 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUSUMU IND CO Ltd
Original Assignee
SUSUMU IND CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUSUMU IND CO Ltd filed Critical SUSUMU IND CO Ltd
Priority to JP09308013A priority Critical patent/JP3105483B2/en
Publication of JPH11126556A publication Critical patent/JPH11126556A/en
Application granted granted Critical
Publication of JP3105483B2 publication Critical patent/JP3105483B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the fusion precision as much as possible in a chip type fuse comprising a fusible body made of a metal thin film. SOLUTION: In a chip type fuse 1 comprising an insulating base 2 having electrodes in both ends, a protective layer 4 forming a space shut out of the outside in combination with the insulating base 2, and a fusible body 3 made of a metal thin film and fixed between the insulating base 2 and the protective layer 4 while the intermediate part being lifted in the space, the face on the electrode 6 side of the insulating base 2 is flat and the fusible body 3 is curved in the direction of parting from the flat face.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、チップ型ヒューズ
及びその製造方法に属する。
The present invention relates to a chip type fuse and a method for manufacturing the same.

【0002】[0002]

【従来の技術】電子機器には、それのプリント基板に実
装された高価なIC等の回路素子を異常電流から保護
し、プリント基板の発火を防止するためにヒューズが内
蔵されている。ヒューズには、その目的からして優れた
即断性と確実な遮断特性が望まれる。一方、電子機器の
小型化要請に伴い、それに内蔵されるヒューズもチップ
型ヒューズのように小さいものが汎用されている。ヒュ
ーズは、小さくなるほど、その可溶体の熱容量も少なく
なるから、発熱量と放熱量とのバランスを一定に保つこ
とが困難となり、特性にばらつきが生じやすい。
2. Description of the Related Art An electronic device has a built-in fuse for protecting a circuit element such as an expensive IC mounted on a printed circuit board from an abnormal current and preventing ignition of the printed circuit board. For the purpose, a fuse is required to have excellent quick disconnection and reliable shutoff characteristics. On the other hand, with the demand for miniaturization of electronic devices, small fuses such as chip type fuses are generally used in the electronic devices. The smaller the fuse, the smaller the heat capacity of the fusible body, so it is difficult to maintain a constant balance between the amount of heat generation and the amount of heat radiation, and characteristics tend to vary.

【0003】そこで、ヒューズを超小型化しつつ、その
溶断特性を一定に維持するために、耐熱絶縁材料からな
り空間を有する積層基板で本体を構成し、その基板間に
金属薄膜からなる可溶体を挟むことにより、可溶体を本
体内部の空間に張るチップ型ヒューズが提案されている
(特開平7−105824号)。これはガラス管型ヒュ
ーズのような旧来のヒューズの基本的概念をチップ型ヒ
ューズに適用したものと思われる。
In order to keep the fusing characteristics constant while minimizing the size of the fuse, the main body is composed of a laminated substrate made of a heat-resistant insulating material and having a space, and a fusible body composed of a metal thin film is interposed between the substrates. A chip-type fuse has been proposed in which a fusible body is stretched in a space inside a main body by sandwiching the fuse (JP-A-7-105824). This seems to apply the basic concept of a conventional fuse such as a glass tube type fuse to a chip type fuse.

【0004】[0004]

【発明が解決しようとする課題】しかし、’824号公
報に記載のチップ型ヒューズの場合、その可溶体が金属
薄膜からなるので、熱容量が少なく、依然として特性に
ばらつきを生じやすい。それ故、この発明の目的は、金
属薄膜からなる可溶体を有するチップ型ヒューズにおい
て、その溶断精度をできるだけ向上させることにある。
However, in the case of the chip type fuse described in the '824 publication, since the fusible body is a thin metal film, the heat capacity is small, and the characteristics are still likely to vary. Therefore, an object of the present invention is to improve the fusing accuracy of a chip type fuse having a fusible body made of a metal thin film as much as possible.

【0005】[0005]

【課題を解決するための手段】その目的を達成するため
に、本発明のチップ型ヒューズは、両端に電極が設けら
れた絶縁基板と、この絶縁基板と相まって外部から遮断
された空間を形成する保護層と、中間部が前記空間に浮
くように両端が絶縁基板と保護層との間に固定された金
属薄膜からなる可溶体とを備えたチップ型ヒューズにお
いて、前記絶縁基板の電極側の面は平坦であって、前記
可溶体がその平坦面から離れる方向に湾曲していること
を特徴とする。
In order to achieve the object, a chip-type fuse according to the present invention forms an insulating substrate provided with electrodes at both ends and a space cut off from the outside in combination with the insulating substrate. In a chip-type fuse including a protective layer and a fusible body made of a metal thin film having both ends fixed between an insulating substrate and a protective layer so that an intermediate portion floats in the space, an electrode surface of the insulating substrate is provided. Is flat, and the fusible body is curved in a direction away from the flat surface.

【0006】空中に浮いた可溶体は、異常電流によって
溶断する前に一旦熱膨張し、湾曲する。’824号公報
に記載のヒューズの場合、その可溶体が空間内で直線状
に張られているため、異常時の湾曲方向は不定である。
従って、基板の上下方向に湾曲するか面方向に湾曲する
かで放熱速度が異なり、それがばらつきの原因となって
いると考えられる。これに対して、本発明のヒューズの
場合、可溶体が常時一定方向に湾曲しているため、異常
電流時にも同方向に湾曲する。従って、溶断特性が一定
に保たれ、精度が向上する。
[0006] The fusible body floating in the air once thermally expands and curves before being blown by an abnormal current. In the case of the fuse described in the '824 publication, since the fusible body is stretched linearly in the space, the bending direction at the time of abnormality is indefinite.
Therefore, it is considered that the heat release rate differs depending on whether the substrate is bent in the vertical direction or in the surface direction, which is considered to be a cause of variation. On the other hand, in the case of the fuse of the present invention, since the fusible body is always curved in a certain direction, it also bends in the same direction even when an abnormal current flows. Therefore, the fusing characteristics are kept constant, and the accuracy is improved.

【0007】前記可溶体は、一様に単一の成分からなる
ものに限らない。異常時の湾曲方向を更に確実に一定に
保つため、可溶体が熱膨張係数の大きい第一層と熱膨張
係数の小さい第二層との複数層からなり、第一層が第二
層よりも絶縁基板の平坦面に近い側に設けられるように
すると好ましい。こうすることで、異常時には常に第一
層が第二層を押し上げる方向に湾曲部分が膨らむ。第一
層として銅Cuを主成分とし、第二層としてニッケルN
iを主成分とする組み合わせが挙げられる。
[0007] The fusible body is not limited to a uniform single component. The fusible body is composed of a plurality of layers of a first layer having a large coefficient of thermal expansion and a second layer having a small coefficient of thermal expansion in order to more reliably maintain the bending direction at the time of abnormality, and the first layer is more than the second layer. It is preferable that the insulating substrate is provided on the side closer to the flat surface. By doing so, the curved portion always expands in the direction in which the first layer pushes up the second layer at the time of an abnormality. The first layer is mainly composed of copper Cu, and the second layer is nickel N
A combination having i as a main component is exemplified.

【0008】又、前記可溶体の中間部は、幅が一様とは
限らず、幅の広い部分と狭い部分を有するものとするこ
ともできる。こうすることで、幅の広い部分が電源投入
時のラッシュ電流により発した熱を放散し、溶断動作を
遅延させることができるからである。
[0008] The intermediate portion of the fusible body is not necessarily uniform in width, but may have a wide portion and a narrow portion. By doing so, the wide portion can dissipate the heat generated by the rush current when the power is turned on, and can delay the fusing operation.

【0009】本発明のチップ型ヒューズを製造する適切
な方法は、両端に電極が設けられた平坦な面を有する絶
縁基板を用意し、それら電極間に所定の高さを有する土
台を形成し、その土台を跨いで両電極を接続する金属薄
膜からなる可溶体を形成した後、その土台を除去するこ
とを特徴とする。ここで、土台とは、フォトレジスト、
テープなどのように、可溶体形成中に所定の高さを維持
し、可溶体形成後に除去されうるものであればよい。本
発明方法によれば、絶縁基板を加工する必要はなく、可
溶体の中間部を容易に空中に浮かせることができる。
[0009] A suitable method of manufacturing the chip type fuse of the present invention is to prepare an insulating substrate having a flat surface provided with electrodes on both ends, forming a base having a predetermined height between the electrodes, After forming a fusible body composed of a metal thin film connecting the two electrodes across the base, the base is removed. Here, the foundation is a photoresist,
Any material, such as a tape, may be used as long as it maintains a predetermined height during the formation of the fusible body and can be removed after the formation of the fusible body. According to the method of the present invention, it is not necessary to process the insulating substrate, and the intermediate portion of the fusible body can be easily floated in the air.

【0010】[0010]

【発明の実施の形態】本発明の実施形態を図面と共に説
明する。図1(A)は実施形態のチップ型ヒューズを示
す断面図、図2〜図11は実施形態のチップ型ヒューズ
の製造方法を工程順に示す平面図である。
Embodiments of the present invention will be described with reference to the drawings. FIG. 1A is a cross-sectional view illustrating a chip-type fuse of the embodiment, and FIGS. 2 to 11 are plan views illustrating a method of manufacturing the chip-type fuse of the embodiment in the order of steps.

【0011】チップ型ヒューズ1は、平坦な主面を有す
る絶縁基板2と、絶縁基板2の主面に形成された可溶体
3と、絶縁基板2上で可溶体3の両端部を除く部分を覆
う保護層4と、可溶体3の露出した両端部に接続し絶縁
基板2の側面を経由して背面にまで延びる端子5とを備
える。
The chip type fuse 1 includes an insulating substrate 2 having a flat main surface, a fusible body 3 formed on the main surface of the insulating substrate 2, and a portion of the insulating substrate 2 except for both ends of the fusible body 3. The protective layer 4 includes a covering protective layer 4 and terminals 5 connected to the exposed both ends of the fusible member 3 and extending to the rear surface via the side surface of the insulating substrate 2.

【0012】絶縁基板2はアルミナを主成分とし、その
主面の平坦度はアルミナの含有量によって定まる。例え
ばアルミナ含有量96重量%のときは表面粗さが10〜
5μmであり、同99.5重量%のときは1〜2μmで
ある。絶縁基板2の両端には銅Cuの電極6が設けられ
ている。絶縁基板2は、厚さが0.38mmで、面積が
1.25mm×2mmである。
The insulating substrate 2 contains alumina as a main component, and the flatness of the main surface is determined by the content of alumina. For example, when the alumina content is 96% by weight, the surface roughness is 10 to 10.
It is 5 μm, and when it is 99.5% by weight, it is 1-2 μm. Copper Cu electrodes 6 are provided at both ends of the insulating substrate 2. The insulating substrate 2 has a thickness of 0.38 mm and an area of 1.25 mm × 2 mm.

【0013】可溶体3は図1(B)に拡大して示すよう
に銅Cuで形成された第一層31とニッケルリンNiP
で形成された第二層32とからなり、両端がそれぞれ電
極6に接続すると共に、中間部は絶縁基板2の主面から
離れる方向に湾曲している。この中間部の高さは、15
〜20μmである。この中間部と絶縁基板2の主面との
距離を確保するために、前記絶縁基板2の表面粗さは、
この中間部の高さよりも十分小さくなければならない。
As shown in FIG. 1B, the fusible body 3 includes a first layer 31 made of copper Cu and nickel phosphorus NiP.
The both ends are respectively connected to the electrodes 6, and the intermediate portion is curved in a direction away from the main surface of the insulating substrate 2. The height of this middle part is 15
2020 μm. In order to secure a distance between the intermediate portion and the main surface of the insulating substrate 2, the surface roughness of the insulating substrate 2 is
It must be sufficiently smaller than the height of this middle part.

【0014】保護層4は、内側の第一層41がフォトレ
ジストからなり、外側の第二層42がエポキシ樹脂等の
耐熱絶縁性有機材料からなる。第一層41は、絶縁基板
2と相まって可溶体3が存在する空間を確保する。第二
層42は、このヒューズ1をプリント基板などに半田付
けする際のような高温時に、非耐熱性の第一層41が変
形するのを防止する。
The protective layer 4 has a first inner layer 41 made of a photoresist and an outer second layer 42 made of a heat-resistant insulating organic material such as an epoxy resin. The first layer 41 secures a space where the fusible body 3 exists in combination with the insulating substrate 2. The second layer 42 prevents the non-heat-resistant first layer 41 from being deformed at a high temperature such as when the fuse 1 is soldered to a printed circuit board or the like.

【0015】以上の構成を備えるヒューズ1は、可溶体
3の中間部が周囲の環境と遮断された空間に浮いている
ため、可溶体3から発せられる熱が絶縁基板2に逃げな
い。しかも可溶体3は外側の第二層32よりも内側の第
一層31のほうが熱膨張係数が大きいから、発熱時には
溶断直前まで膨張すると共に第一層31が第二層32を
押し上げる。従って、可溶体3は常に絶縁基板2から離
れる方向に変形し、溶断特性が一定に保たれ、優れた精
度で溶断する。チップ型ヒューズ1は、以下の手順で製
造される。
In the fuse 1 having the above-described configuration, the heat generated from the fusible body 3 does not escape to the insulating substrate 2 because the intermediate portion of the fusible body 3 is floating in a space isolated from the surrounding environment. In addition, since the fusible body 3 has a larger thermal expansion coefficient in the inner first layer 31 than in the outer second layer 32, the first layer 31 expands up to just before fusing when the heat is generated, and the first layer 31 pushes up the second layer 32. Therefore, the fusible member 3 is always deformed in a direction away from the insulating substrate 2, the fusing characteristics are kept constant, and the fusing is performed with excellent accuracy. The chip type fuse 1 is manufactured by the following procedure.

【0016】[土台の形成]アルミナからなる1枚の大
型基板からチップ型ヒューズを同時に多数個取りするも
のとする。先ず基板の主面にNiCr合金、CuNi合
金及びCuを順にスパッタする(図2)。図2ではヒュ
ーズ1個分の平面形状のみ示されている。図3から図8
までも同様である。電極パターンが露出するようにフォ
トレジストを塗布し、露出部分にCuメッキをする(図
3)。電極部分以外のスパッタリング薄膜をエッチング
により除く。そして、可溶体3の土台7を液状フォトレ
ジストで形成する(図4)。液状フォトレジストに代え
てフィルムレジストを貼り付けても良いし、その他の剥
離可能な樹脂をスクリーン印刷などしても良い。
[Formation of Base] It is assumed that a large number of chip-type fuses are simultaneously obtained from one large-sized substrate made of alumina. First, a NiCr alloy, a CuNi alloy, and Cu are sequentially sputtered on the main surface of the substrate (FIG. 2). FIG. 2 shows only a planar shape for one fuse. 3 to 8
The same applies to. A photoresist is applied so that the electrode pattern is exposed, and Cu is plated on the exposed portion (FIG. 3). The sputtering thin film other than the electrode portion is removed by etching. Then, the base 7 of the fusible body 3 is formed of a liquid photoresist (FIG. 4). A film resist may be stuck instead of the liquid photoresist, or another peelable resin may be screen-printed.

【0017】[可溶体の形成]可溶体3の第一層の下地
となるCuの薄膜を全面にスパッタし、フォトリソ技術
で可溶体のパターンにする(図5)。その上に第一層3
1としてのCuをメッキする。このときのパターン幅や
長さ、メッキ厚は目的のヒューズ定格が得られるように
定める。続いて第二層32としてのNiPをメッキす
る。
[Formation of Soluble Body] A Cu thin film serving as a base of the first layer of the fusible body 3 is sputtered on the entire surface to form a fusible body pattern by a photolithographic technique (FIG. 5). First layer 3 on top
Cu as 1 is plated. The pattern width, length, and plating thickness at this time are determined so as to obtain a desired fuse rating. Subsequently, NiP as the second layer 32 is plated.

【0018】[土台の除去]その後、土台7を溶かして
剥離し(図6)、280℃で60分間アニールする。こ
のアニールは、メッキ膜の歪みを除くことと、電極のC
u成分と第一層のCu成分とを結合させることのために
行われる。土台7の剥離によって可溶体の中間部が基板
表面から浮いた状態となる。
[Removal of Base] Thereafter, the base 7 is melted and peeled off (FIG. 6), and annealing is performed at 280 ° C. for 60 minutes. This annealing removes the distortion of the plating film and the C of the electrode.
This is performed for bonding the u component and the Cu component of the first layer. Due to the peeling of the base 7, the intermediate portion of the fusible body floats from the substrate surface.

【0019】[保護層の形成]可溶体3の浮いている部
分を囲むように感光性のフィルムレジストで側壁43を
形成する(図7)。側壁43の高さは可溶体3の高さよ
り50μm以上高くなるようにする。更に同じフィルム
レジストで可溶体の上方に天井を形成し、可溶体の中間
部を外気から遮断する。側壁と天井とは結合して保護層
の第一層41となる。更にエポキシ樹脂等の耐熱性の樹
脂で側壁及び天井を被覆することにより、保護層の第二
層42を設ける。ヒューズの定格電流値(本例では2ア
ンペア)を表示する(図8)。
[Formation of Protective Layer] Side walls 43 are formed of a photosensitive film resist so as to surround the floating portions of the fusible member 3 (FIG. 7). The height of the side wall 43 is set to be 50 μm or more higher than the height of the fusible member 3. Further, a ceiling is formed above the fusible body with the same film resist, and an intermediate portion of the fusible body is shielded from the outside air. The side wall and the ceiling are combined to form the first layer 41 of the protective layer. Further, the second layer 42 of the protective layer is provided by covering the side wall and the ceiling with a heat-resistant resin such as an epoxy resin. The rated current value of the fuse (2 amps in this example) is displayed (FIG. 8).

【0020】[個々のチップへの分割]個々のチップ毎
に分割できるようにレーザーで溝切りし(図9の破
線)、所定個数のチップが一列に並んだ棒状に分割する
(図10(A))。端面にNiCr及びCuを順にスパッ
タすることにより端子の下地を形成する(図10
(B))。単体のチップに切り離す。端子の下地部分にC
u、Ni及び半田を順にメッキし、抵抗を検査すること
によってチップ型ヒューズとして完成する(図11)。
[Division into Individual Chips] Grooves are formed with a laser so that individual chips can be divided (broken lines in FIG. 9), and a predetermined number of chips are divided into rods in a line (FIG. 10 (A) )). NiCr and Cu are sequentially sputtered on the end face to form the base of the terminal (FIG. 10).
(B)). Cut into single chips. C on the base of the terminal
u, Ni, and solder are sequentially plated, and the resistance is inspected to complete a chip-type fuse (FIG. 11).

【0021】上記工程から明らかなように、本発明の製
造方法によれば絶縁基板を機械加工することなく、薄膜
技術だけで可溶体の中間部を空中に浮かせることができ
る。従って、製造コストが低い。
As is apparent from the above steps, according to the manufacturing method of the present invention, the intermediate portion of the fusible body can be floated in the air only by the thin film technique without machining the insulating substrate. Therefore, the manufacturing cost is low.

【0022】[0022]

【発明の効果】本発明のチップ型ヒューズは、溶断精度
に優れるので、小型電子機器の回路素子を保護するのに
有益である。
The chip type fuse of the present invention has excellent fusing accuracy and is therefore useful for protecting circuit elements of small electronic equipment.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 実施形態のチップ型ヒューズの断面図であ
り、(A)はその全体、(B)は(A)のB部拡大図で
ある。
FIG. 1 is a cross-sectional view of a chip type fuse according to an embodiment, where (A) is an entire view and (B) is an enlarged view of a B portion of (A).

【図2】 実施形態のチップ型ヒューズの製造方法にお
いて、土台形成工程の初期を示す平面図である。
FIG. 2 is a plan view showing an initial stage of a base forming step in the method of manufacturing the chip fuse of the embodiment.

【図3】 実施形態のチップ型ヒューズの製造方法にお
いて、土台形成工程の中期を示す平面図である。
FIG. 3 is a plan view showing a middle stage of a base forming step in the method of manufacturing the chip fuse of the embodiment.

【図4】 実施形態のチップ型ヒューズの製造方法にお
いて、土台形成工程の後期を示す平面図である。
FIG. 4 is a plan view showing a later stage of a base forming step in the method of manufacturing the chip fuse of the embodiment.

【図5】 実施形態のチップ型ヒューズの製造方法にお
いて、可溶体形成工程を示す平面図である。
FIG. 5 is a plan view showing a fusible member forming step in the method for manufacturing the chip fuse of the embodiment.

【図6】 実施形態のチップ型ヒューズの製造方法にお
いて、土台除去工程を示す平面図である。
FIG. 6 is a plan view showing a base removing step in the method of manufacturing the chip fuse of the embodiment.

【図7】 実施形態のチップ型ヒューズの製造方法にお
いて、保護層形成工程の初期を示す平面図である。
FIG. 7 is a plan view showing an initial stage of a protective layer forming step in the method of manufacturing the chip fuse of the embodiment.

【図8】 実施形態のチップ型ヒューズの製造方法にお
いて、保護層形成工程の後期を示す平面図である。
FIG. 8 is a plan view showing a later stage of a protective layer forming step in the method of manufacturing the chip fuse of the embodiment.

【図9】 実施形態のチップ型ヒューズの製造方法にお
いて、個々のチップへの分割工程の初期を示す平面図で
ある。
FIG. 9 is a plan view showing an initial stage of a dividing step into individual chips in the method of manufacturing the chip fuse of the embodiment.

【図10】 実施形態のチップ型ヒューズの製造方法に
おいて、個々のチップへの分割工程の後期を示し、
(A)はその平面図、(B)は右側面図である。
FIG. 10 shows a later stage of the step of dividing into individual chips in the method of manufacturing the chip fuse of the embodiment;
(A) is a plan view, and (B) is a right side view.

【図11】 実施形態のチップ型ヒューズの製造方法に
おいて、完成状態を示す平面図である。
FIG. 11 is a plan view showing a completed state in the method for manufacturing the chip fuse of the embodiment.

【符号の説明】[Explanation of symbols]

1 チップ型ヒューズ 2 絶縁基板 3 可溶体 31 第一層 32 第二層 4 保護層 5 端子 6 電極 7 土台 REFERENCE SIGNS LIST 1 chip type fuse 2 insulating substrate 3 fusible material 31 first layer 32 second layer 4 protective layer 5 terminal 6 electrode 7 base

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】両端に電極が設けられた絶縁基板と、この
絶縁基板と相まって外部から遮断された空間を形成する
保護層と、中間部が前記空間に浮くように両端が絶縁基
板と保護層との間に固定された金属薄膜からなる可溶体
とを備えたチップ型ヒューズにおいて、 前記絶縁基板の電極側の面は平坦であって、前記可溶体
がその平坦面から離れる方向に湾曲していることを特徴
とするヒューズ。
1. An insulating substrate having electrodes provided at both ends, a protective layer forming a space which is shielded from the outside together with the insulating substrate, and an insulating substrate and a protective layer having both ends such that an intermediate portion floats in the space. And a fusible body made of a metal thin film fixed between the fusible body and the insulating substrate, wherein the surface of the insulating substrate on the electrode side is flat, and the fusible body curves in a direction away from the flat surface. Fuse.
【請求項2】前記可溶体が熱膨張係数の大きい第一層と
熱膨張係数の小さい第二層との複数層からなり、第一層
が第二層よりも絶縁基板の平坦面に近い側に設けられる
請求項1に記載のヒューズ。
2. The method according to claim 1, wherein the fusible body includes a plurality of layers including a first layer having a large thermal expansion coefficient and a second layer having a small thermal expansion coefficient, wherein the first layer is closer to the flat surface of the insulating substrate than the second layer. 2. The fuse according to claim 1, wherein the fuse is provided.
【請求項3】前記第一層が銅Cuを主成分とし、前記第
二層がニッケルNiを主成分とする請求項2に記載のヒ
ューズ。
3. The fuse according to claim 2, wherein said first layer has copper Cu as a main component, and said second layer has nickel Ni as a main component.
【請求項4】前記可溶体の中間部は、幅の広い部分と狭
い部分を有する請求項1に記載のヒューズ。
4. The fuse according to claim 1, wherein the intermediate portion of the fusible has a wide portion and a narrow portion.
【請求項5】両端に電極が設けられた平坦な面を有する
絶縁基板を用意し、それら電極間に所定の高さを有する
土台を形成し、その土台を跨いで両電極を接続する金属
薄膜からなる可溶体を形成した後、その土台を除去する
ことを特徴とするチップ型ヒューズの製造方法。
5. A metal thin film for preparing an insulating substrate having flat surfaces on both ends of which electrodes are provided, forming a base having a predetermined height between the electrodes, and connecting the two electrodes across the base. A method for manufacturing a chip-type fuse, comprising: forming a fusible body comprising:
JP09308013A 1997-10-21 1997-10-21 Chip type fuse and manufacturing method thereof Expired - Fee Related JP3105483B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09308013A JP3105483B2 (en) 1997-10-21 1997-10-21 Chip type fuse and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09308013A JP3105483B2 (en) 1997-10-21 1997-10-21 Chip type fuse and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH11126556A true JPH11126556A (en) 1999-05-11
JP3105483B2 JP3105483B2 (en) 2000-10-30

Family

ID=17975846

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3105483B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1067564A1 (en) * 1999-07-09 2001-01-10 Seima Elettronica S.r.l. Resistor device with fuse function
WO2011043233A1 (en) * 2009-10-08 2011-04-14 北陸電気工業株式会社 Chip fuse
JP2011222344A (en) * 2010-04-12 2011-11-04 Conquer Electronics Co Ltd Embedded circuit protection member and manufacturing method thereof
JP2011243533A (en) * 2010-05-21 2011-12-01 Kyocera Corp Current fuse device and circuit board
KR20150073957A (en) * 2012-09-28 2015-07-01 가마야 덴끼 가부시끼가이샤 Chip fuse and manufacturing method therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021202853B4 (en) * 2021-03-24 2022-10-06 Vitesco Technologies Germany Gmbh Electronic assembly with improved security concept

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1067564A1 (en) * 1999-07-09 2001-01-10 Seima Elettronica S.r.l. Resistor device with fuse function
WO2011043233A1 (en) * 2009-10-08 2011-04-14 北陸電気工業株式会社 Chip fuse
JP2011082064A (en) * 2009-10-08 2011-04-21 Hokuriku Electric Ind Co Ltd Chip fuse
JP2011222344A (en) * 2010-04-12 2011-11-04 Conquer Electronics Co Ltd Embedded circuit protection member and manufacturing method thereof
JP2011243533A (en) * 2010-05-21 2011-12-01 Kyocera Corp Current fuse device and circuit board
KR20150073957A (en) * 2012-09-28 2015-07-01 가마야 덴끼 가부시끼가이샤 Chip fuse and manufacturing method therefor
US9852868B2 (en) 2012-09-28 2017-12-26 Kamaya Electric Co., Ltd. Chip fuse and manufacturing method therefor

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