JPH11121682A - Tape carrier package semiconductor device and liquid crystal panel display device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a flex TCP(tape carrier package) semiconductor device with a high manufacture yield, in which a copper-wiring pattern is difficult to be disconnected. SOLUTION: Slits 25 and 25 are provided for a polyimide base material 22, and a copper wiring pattern constituted of inner leads 26..., input side outer leads 27...,outer side outer leads 28... is formed on the surface of the polyimide base material 22. Solder resists 31 and 31 are formed on the lower face of the slits 25 and 25 and solder resists 30 on the copper wiring pattern. The solder resists 31 and 31 and the solder resists 30 form an identical solder resists, whose Young's moduli are in the range of 5 kgf/mm<2> -70 kgf/mm<2> , and a filler quantity is in the range of 10 wt.%-40 wt.%. Thus, a flex TCP semiconductor device for which the copper wiring pattern is difficult to be disconnected and the manufacture yield of which is high can be provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a TCP semiconductor device using a solder resist having appropriate flexibility and a liquid crystal panel display using the TCP semiconductor device.

[0002]

2. Description of the Related Art Flexible folding TCP (Tape)
Carrier Package) semiconductor devices are called flex TCP semiconductor devices. The flex TCP semiconductor device is used as a driver semiconductor package, particularly in a liquid crystal panel having a small frame size.

[0003] Liquid crystal panels tend to become larger year by year, and are currently used for notebook PCs (Personal Computers).
Some products exceed inches. Therefore, development of a flex TCP semiconductor device for a large liquid crystal panel is desired.

FIG. 6A shows a plan structure of a two-color flex TCP semiconductor device 101 on which two types of solder resists are formed, and FIG. 6B shows a cross-sectional view taken along line AA '.

[0005] Two-color flex TCP semiconductor device 101
Has a structure in which a driver IC chip 104 is electrically connected to a tape carrier 103 manufactured using a film-like polyimide substrate 102.

The tape carrier 103 has a slit 105
105, an inner lead 106, an input outer lead 107, an output outer lead 108, and a copper wiring pattern including a test pad 109, and an epoxy solder resist for insulatingly covering the slits 105, 105 and the copper wiring pattern. 110, polyimide solder resists 111, 111, polyimide solder resists 112, 112, and polyimide base material 102
And sprocket holes 113 used for positioning.

In particular, a hard epoxy solder resist 110 having a Young's modulus of 380 ± 80 kgf / mm ² and a Young's modulus of 50 ± 20 kgf / mm ² are formed on the copper wiring pattern.
Polyimide solder resist 111 having flexibility of ²
Two types of solder resists 111 are provided.

The epoxy-based solder resists 110 use the large Young's modulus to prevent the bleeding of the polyimide-based solder resists 111 (the solder resist mainly flows out of the solvent after printing). This has a role of preventing the edges of the polyimide-based solder resists 111 from peeling off in a tin plating forming step at the time of manufacturing the tape carrier 103 described later. Thereby, the polyimide solder resist 1
11. Improve the patterning accuracy of 111.

Also, polyimide solder resists 112 having a Young's modulus of 50 ± 20 kgf / mm ² are formed on the lower surfaces of the slits 105 (behind the surface on which the copper wiring pattern is formed).

On the other hand, the driver IC chip 104
The bumps 114 are electrically connected to the inner leads 106. The periphery of the connection point is sealed with a resin 115.

Next, a manufacturing process of the tape carrier 103 in the two-color flex TCP semiconductor device 101 having the above structure will be described with reference to FIG.

First, an adhesive is applied to the surface of a polyimide base material 102 (UPIREX; trademark of Ube Industries) (Step 1), and the polyimide base 102 is formed to form device holes, slits 105, sprocket holes 113, and the like. The material 102 is punched out with a mold (step 2).

Next, one of 18 μm, 25 μm, and 35 μm thick copper foils is laminated on the polyimide substrate 102 (step 3). First, polyimide-based solder resists 112 are formed in the slits 105 from the side opposite to the surface on which a copper wiring pattern is to be formed later (Step 4).

Then, a photoresist as an etching mask is applied to the surface of the copper foil (Step 5), and a desired pattern is baked by exposure (Step 6) and developed (Step 7). After forming a photoresist as an etching mask also in the device hole (Step 8), it is immersed in a copper foil etchant to form a desired copper wiring pattern (Step 9). After forming the copper wiring pattern in this manner, all the photoresists are removed by an organic solvent or dry etching (step 10).

Next, on the surface of the polyimide base material 102 on which the copper wiring pattern is formed, an epoxy solder resist 110 having a thickness of about 25 μm is placed between the polyimide solder resists 111 to be formed later on both sides.
Are formed by printing (step 11). Then, 25 μm is applied so as to cover the slits 105 which are bent portions.
The same polyimide solder resist 1 as in step 4 with a thickness of about m
11 and 111 are formed by printing (step 12).

Next, tin plating having a thickness of about 0.2 μm to 0.6 μm is formed on the exposed copper foil surface by electroless plating, and after tin plating, curing (heat treatment) is performed so that whiskers do not occur ( Step 13). A whisker is a needle-like crystal generated by many metals when stress or the like is applied. In particular, tin plating is likely to occur. When the whiskers grow, a short circuit may occur between the terminals, so that the tin plating is heat-treated to suppress this.

Finally, the tape carrier 103 manufactured by the above steps is shipped (step 14).

FIG. 8A shows a planar structure of a one-color flex TCP semiconductor device 121 in which only one kind of solder resist is formed on a copper wiring pattern, and FIG.
B 'line sectional views are shown. This solder resist
It is a hard epoxy-based solder resist 123 having a Young's modulus of 200 ± 50 kgf / mm ² . This one-color flex TCP semiconductor device 121 is a two-color flex TC
Since the number of times of forming the solder resist is smaller than that of the P semiconductor device 101, it can be manufactured at very low cost. However, on the other hand, since the solder resist having a large Young's modulus is used as described above, the two-color flex TC
It is inferior to the P semiconductor device 101 in bending flexibility during mounting.

FIG. 9 shows a manufacturing process of the tape carrier 122 in the one-color flex TCP 121. The difference from the manufacturing process of the tape carrier 103 in the two-color flex TCP semiconductor device 101 is that, as described above, the Young's modulus is 200 ± 50 kgf on the copper wiring pattern.
/ Mm ² hard epoxy-based solder resist 123/12
3 is to form only one type.

Next, referring to FIG. 10, two-color flex TC
Liquid crystal panel 201 and PWB of P semiconductor device 101 ...
(Printed Wiring Board) A method of mounting on the substrate 202 will be described. In general, when a two-color flex TCP semiconductor device is mounted on a TFT liquid crystal, it depends on the resolution.
In the case of a 68-dot liquid crystal panel, about 13 two-color flex TCP semiconductor devices are provided as drivers on the source side of the frame of one panel.

First, ACF (Anisotropic Conductive Film) which is an anisotropic and conductive adhesive is applied to the liquid crystal panel 201.
) Is temporarily crimped. The ACF has a width of about 1.2 mm to about 3 mm, and is appropriately selected according to the size of the frame of the liquid crystal panel 201. Therefore, for example, if the width of the frame is small, a narrow ACF is selected. A
To temporarily press the CF, a tool heated to 90 ° C. is pressed for about 2 seconds while the ACF is stuck to the liquid crystal panel 201. At this time, the ACF reacts and is cured by heat, but is not completely cured so that the final pressure bonding can be performed later.

At the time when the temporary compression bonding of the ACF is completed, the ACF
Are peeled off, and the output-side outer leads 108 of the two-color flex TCP semiconductor device 101 are provisionally press-bonded thereto. At this time, 2-color flex TC
The P semiconductor device 101 and the liquid crystal panel 201 are aligned using the alignment marks formed on the respective devices. Since the two-color flex TCP semiconductor devices 101 are in a state of being connected in a reel shape before the temporary crimping,
Punch it out with a mold to make individual pieces. Then, at the time of temporary compression bonding, the tool heated to 100 ° C. is pressed with a load of 10 kgf / cm ² for 3 seconds, but the ACF is not completely cured.

Two-color flex TCP semiconductor device 101
After the temporary crimping, the final crimping is performed. The final pressure bonding is performed at 200 ° C. for all the two-color flex TCP semiconductor devices 101.
The tool is heated by applying a load of 35 kgf / cm ² for 20 seconds.

The liquid crystal panel 201 has a two-color flex TCP
When the semiconductor devices 101 are mounted, the outer lead 1 on the input side of the two-color flex TCP semiconductor device 101
07 are joined to the PWB substrate 202. PWB substrate 20
2 and soldering method and ACF
There is a method by. In the mounting method by ACF, PW
The B substrate 202 is aligned, and all the two-color flex TCP semiconductor devices 101 are mounted collectively. At this time, thermal stress concentrates on the two-color flex TCP semiconductor device 101 due to the difference in thermal expansion coefficient between the PWB substrate 202 and the glass substrate constituting the liquid crystal panel 201.

Two-color flex TCP semiconductor device 101 ...
In the state where such thermal stress is applied, the PWB substrate 2
02 is folded so as to be disposed on the back side of the liquid crystal panel 201.

[0026]

However, in the two-color flex TCP semiconductor device 101 using two types of solder resists as shown in FIG. 6, the used solder resist has a large Young's modulus. For this reason, 2-color Flex TC
When the P semiconductor device 101 is mounted on a large liquid crystal panel of 17 inches or more, the liquid crystal panel 201 and the PWB substrate 202
Flex TC caused by the difference in thermal expansion coefficient between
The stress on the P semiconductor devices 101 increases, and the stress concentrates on the copper wiring pattern, so that the copper wiring pattern is easily broken.

At this time, as shown in FIG. 11, the portion where the wire is broken is near the output outer leads 108 where the liquid crystal panel 201 and the two-color flex TCP semiconductor device 101 are joined by the ACF. This disconnection becomes remarkable as the size of the liquid crystal panel 201 increases, and becomes a serious problem in producing a liquid crystal panel display device.

A two-color flex TCP semiconductor device 1
In the case of No. 01, since the hard epoxy-based solder resist 110 is used, the two-color flex TCP semiconductor device 101 itself becomes hard and loses flexibility. Besides, 2
If a hard solder resist is formed on the color-flexible TCP semiconductor device 101, the two-color-flexible TCP semiconductor device 101 is warped, so that the two-color-flexible TCP semiconductor device 101 cannot be smoothly transported in the assembly process. This warpage is particularly caused by the 2-color Flex TC
It easily occurs when the width of the P semiconductor device 101 is 48 mm or more.

In the two-color flex TCP semiconductor device 101, two types of solder resists are formed.
In the process of printing these, two dedicated printing machines are required, and the management of the solder resist is complicated. Therefore, there is a problem that the manufacturing cost of the tape carrier 103 increases.

If only a polyimide-based solder resist is formed as the solder resist, it is possible to solve the warpage of the flex TCP semiconductor device and increase the manufacturing cost of the tape carrier. However, since the polyimide-based solder resist has low thixotropy, bleed 142 occurs at the pattern edge 141 as shown in FIG. The thixotropy is a measure of the property that the viscosity decreases upon stirring and increases upon standing. For example, when the thixotropy of the solder resist is high, the patterning accuracy is good because the viscosity is low during printing, and the viscosity increases after printing, so that bleeding is less likely to occur.

Therefore, if the thixotropy is low, the pattern edge 141 of the solder resist 143 is not accurately printed, which hinders the manufacture of the tape carrier. Further, the solder resist 143 flows out to inner leads 144... In the device hole of the tape carrier, and ILB (Inner Lead)
There is also a disadvantage that bonding cannot be performed in the bonding step.

In the conventional two-color flex TCP semiconductor device 101, the pattern edges of the polyimide solder resists 112 formed on the back side of the slits 105 are peeled off in the tin plating process. As a result, there is a problem that the tape carrier 103 is contaminated.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and has as its object to provide a flexible TCP semiconductor device in which a copper wiring pattern is hardly disconnected and a high production yield, and a large-sized flexible TCP semiconductor device using the flexible TCP semiconductor device. It is to provide a liquid crystal panel display device.

[0034]

According to a first aspect of the present invention, there is provided a tape carrier package semiconductor device comprising a metal wiring pattern provided on an insulating tape and the insulating tape together with the metal wiring pattern. In a tape carrier having an insulating protective film that insulates both sides of a through hole provided in the insulating tape so as to be able to bend, and a tape carrier package semiconductor device in which a semiconductor element is mounted on the tape carrier, Each of the insulating protective films, which insulates both sides of the through hole, has a Young's modulus of 5 kgf / mm ² to
It is characterized by being a solder resist in the range of 70 kgf / mm ² .

[0035] In the above invention, the front and back sides of the through hole as each of the insulating protective film for insulating coating, solder resist having a Young's modulus in the range of 5kgf / mm ² ~70kgf / mm ² are formed. Thereby, the flexibility of the tape carrier package semiconductor device is improved.

Therefore, when the tape carrier package semiconductor device is mounted on a large liquid crystal panel, the metal wiring pattern does not break even if a large stress is applied to the tape carrier package semiconductor device. Further, warpage of the tape carrier package semiconductor device can be suppressed, and the manufacturing yield of the tape carrier package semiconductor device can be improved.

According to a second aspect of the present invention, there is provided a tape carrier package semiconductor device according to the first aspect, wherein the solder resist is provided on both sides of the through hole. It is characterized by being made of the same material.

According to the above invention, the solder resist made of the same material is formed on both sides of the through hole. Since only one type of solder resist is used, when forming the solder resist on both sides of the through hole, only one dedicated device is required and the management of the solder resist becomes easy.

According to a third aspect of the present invention, there is provided a tape carrier package semiconductor device according to the first or second aspect, wherein the solder resist determines the viscosity. It is characterized in that the filler is contained in the range of 10 wt% to 40 wt%.

According to the above-mentioned invention, the solder resist has 1
The filler is contained in the range of 0 wt% to 40 wt%. For this reason, the occurrence of bleeding when printing the solder resist is prevented, so that the patterning accuracy is improved, and the peeling of the solder resist does not occur at the time of manufacturing the tape carrier, so that the yield of manufacturing the tape carrier is improved.

According to a fourth aspect of the present invention, there is provided a tape carrier package semiconductor device according to any one of the first to third aspects, wherein the solder resist is made of a rubber-based material. , Polyimide, urethane, silicone, or epoxy.

According to the above invention, the solder resist is
A highly flexible insulating protective film made of any one of rubber, polyimide, urethane, silicone, and epoxy materials.

According to a fifth aspect of the present invention, there is provided a liquid crystal panel display device, wherein the metal wiring pattern provided on the insulating tape is provided on the insulating tape such that the metal wiring pattern is bendable. A tape carrier package semiconductor device having a tape carrier having an insulating protective film for insulating both the front and back sides of the through hole, and a driving semiconductor element mounted on the tape carrier so as to drive a liquid crystal panel; and the liquid crystal. In a liquid crystal panel display device including a panel, each of the insulating protective films that insulate the front and back sides of the through hole,
Is characterized by a Young's modulus of the solder resist in the range of ^{5kgf / mm 2 ~70kgf / mm 2} .

[0044] According to this invention, each of the insulating protective film covering the front and back sides of the through hole has a Young's modulus of the solder resist in the range of ^{5kgf / mm 2 ~70kgf / mm 2} . Therefore, the liquid crystal panel display device has a highly flexible tape carrier package semiconductor device.

Therefore, even if the tape carrier package semiconductor device is mounted on a liquid crystal panel, the metal wiring pattern does not break. Further, the warpage of the tape carrier package semiconductor device can be suppressed, and the production yield of the liquid crystal panel display device can be improved.

According to a sixth aspect of the present invention, there is provided a liquid crystal panel display device according to the fifth aspect, wherein the solder resist is the same on both sides of the through hole. It is characterized by being made of a material.

According to the above invention, the solder resist made of the same material is formed on both sides of the through hole. Since only one type of solder resist is used, when forming the solder resist on both sides of the through hole, only one dedicated device is required and the management of the solder resist becomes easy.

Therefore, a liquid crystal panel display device can be manufactured at low cost.

According to a seventh aspect of the present invention, there is provided a liquid crystal panel display device according to the fifth or sixth aspect, wherein the solder resist includes a filler for determining the viscosity. 10wt% -40w
It is characterized in that it is contained in the range of t%.

According to the above invention, the solder resist is 1
The filler is contained in the range of 0 wt% to 40 wt%. For this reason, the occurrence of bleeding when printing the solder resist is prevented, so that the patterning accuracy is improved, and the solder resist does not peel off during the production of the tape carrier, so that the production yield of the liquid crystal panel display device is improved.

According to an eighth aspect of the present invention, there is provided a liquid crystal panel display device according to any one of the fifth to seventh aspects, wherein the solder resist is a rubber-based, polyimide , Urethane, silicone, or epoxy material.

According to the above invention, the solder resist is
It functions as a highly flexible insulating protective film made of any of rubber, polyimide, urethane, silicone, and epoxy materials.

According to a ninth aspect of the present invention, there is provided a liquid crystal panel display device according to any one of the fifth to eighth aspects, wherein the liquid crystal panel is 10 inches or more. It is characterized by:

According to the above-mentioned invention, the liquid crystal panel used for the liquid crystal panel display device is large, having a size of 10 inches or more. However, the tape carrier package semiconductor device has a high insulating protection film and a high manufacturing yield. high.

Therefore, even when the tape carrier package semiconductor device is mounted on the liquid crystal panel, the disconnection of the metal wiring pattern does not easily occur, and a large liquid crystal panel display device of 10 inches or more can be manufactured with high yield.

[0056]

BEST MODE FOR CARRYING OUT THE INVENTION

[Embodiment 1] An embodiment of a tape carrier package semiconductor device according to the present invention will be described below with reference to FIGS.

In manufacturing the TCP semiconductor device (tape carrier package semiconductor device) of the present embodiment,
First, a test pattern T as shown in FIG.
The optimal structure of the TCP semiconductor device was examined by making EG1 and conducting a disconnection test.

The TEG 1 is composed of a polyimide substrate 2, a slit 3, a copper wiring pattern 4, electrode pads 5.5, and a solder resist 6. Further, a solder resist 7 is applied to the back side of the slit 3 as shown in FIG.

The dimensions of the main part of the TEG 1 are shown in FIG.
, But is not limited to this.
It is appropriately changed according to the dimensions of the P semiconductor device. Where T
In forming the EG1, the type and thickness of the copper foil used for the copper wiring pattern 4, the type and thickness of the adhesive for bonding the polyimide substrate 2 and the copper foil, and the type and thickness of the solder resist 6
The thickness, dimensions of the slit 3, etc. are determined by the actual TCP
Same as semiconductor device. In particular, electrolytic copper foil is used for the copper foil, the thickness is 1/2 oz, and the wiring pattern width is 35 μm.
m, and the wiring pattern pitch is 70 μm. The adhesive used was # 7100 (trade name) manufactured by Toray Industries, Inc.

The electrode pads 5 are provided so that when the copper wiring pattern 4 is disconnected, it can be immediately confirmed. In order to confirm the disconnection defect, it is only necessary to bring the open checker into contact with the electrode pads 5 after the disconnection test.

For the purpose of simplifying the process, TEG1
The assembly of the driver IC chip is omitted.

Next, as shown in FIGS. 4 (b) and 4 (c), the TEG1...
And three of them are folded. The joining process is as follows.

First, the ACF 13 is temporarily press-bonded to the liquid crystal panel 11. In this temporary crimping, a tool heated to 90 ° C.
A load of 0 kgf / cm ² is applied to the ACF 13 for 2 seconds. Then, the spacers adhering to the ACF 13 are peeled off, and TEG1. This temporary pressure bonding is performed under the same conditions as the above-mentioned temporary pressure bonding.
Next, the tool heated to 200 ° C. was placed at 35 kgf / cm.
Apply a load of ² and press against TEG1 ... for 20 seconds.
G1 and the liquid crystal panel 11 are completely press-bonded.

The liquid crystal panel 11 is made of glass having a thickness of 13.8 inches and a thickness of 1.1 mm. Also,
All crimping devices are commercially available.

Next, the ACF 13 is joined to the PWB substrate 12. At this time, the ACF is performed under the same conditions as the liquid crystal panel 11.
, And the spacers of the ACF 13 are peeled off to align the TEG 1 with the PWB substrate 12.
All the TEGs 1... PWB substrate 1
2 has a thickness of 0.5 mm.

After joining TEG1 to the liquid crystal panel 11 and the PWB substrate 12, the liquid crystal panel 11 and the PWB substrate 12
Are curved so that they face each other at a predetermined interval, and several samples for a disconnection test are produced. FIG. 4C shows the sample as viewed from the side.

In the state of being bent as described above, the copper wiring pattern 4 is placed in a temperature cycle bath and subjected to a disconnection test. The temperature cycle bath is set so that two temperatures of 85 ° C. and −30 ° C. are repeated for 30 minutes, and one cycle (cycle) is counted in one hour. The surface of the slit 3 and on the copper wiring pattern 4 (hereinafter referred to as a region p)
Samples in which various solder resists were formed on the back side (hereinafter, referred to as region q) of the sample were manufactured, and this disconnection test method was applied, and the number of cycles at which disconnection occurred in each sample was determined. Table 1 shows an example of the result.

[0068]

[Table 1]

[0069] Samples were tested, the Young's modulus to form an epoxy-based solder resist of 200 kgf / mm ² in the area p, TEG having a Young's modulus in the region q was formed polyimide solder resist of 50 kgf / mm ² (Sample 1) The Young's modulus is 380 k such that a polyimide solder resist having a Young's modulus of 50 kgf / mm ² is sandwiched in the region p.
A TEG (sample 2) in which an epoxy-based solder resist of gf / mm ² was formed and a polyimide-based solder resist having a Young's modulus of 50 kgf / mm ² was formed in a region q, and a region p
A TEG (sample 3) having a polyimide solder resist having a Young's modulus of 15 kgf / mm ² for both q and a polyimide solder resist having a Young's modulus of 15 kgf / mm ² in a region p and a Young's modulus of 38 kgf in a region q /
TEG with urethane-based solder resist of mm ²
(Sample 4), Young's modulus for both areas p and q is 38 kgf
/ Mm ² TEG with urethane solder resist formed
(Sample 5), Young's modulus of both areas p and q is 42 kgf
/ Mm ² Silicone solder resist formed TE
G (sample 6) and Young's modulus in region p are 200 kg
TCP semiconductor device in which an epoxy solder resist of f / mm ² is formed and a polyimide solder resist having a Young's modulus of 50 kgf / mm ² is formed in region q (sample 7)
It is.

Note that Sample 7 is Samples 1 to 6
Is a TCP semiconductor device actually used for a liquid crystal panel display device. The thickness of the solder resist is all unified to 25 μm.

In Table 1, the fractions shown in the column of the number of temperature cycles leading to disconnection indicate the number of samples tested by the denominator, and the numerator indicates the number of samples in which disconnection occurred. First, all disconnection points are the actual device TC
This coincided with the case of the P semiconductor device. Sample 1 is 2
Since the disconnection occurs in 0 cycles, whereas the disconnection occurs in 500 cycles of Sample 7, it can be seen that the acceleration factor of the disconnection test method is 25 times. Therefore, according to the disconnection test method, the disconnection mode of the actual device can be reproduced in a short time.

On the other hand, as practical disconnection resistance, it is necessary that the TEG does not disconnect within 200 cycles.
From Table 1, it can be seen that Samples 3 to 6 satisfy this condition. Furthermore, the use of a solder resist having a small Young's modulus for both the regions p and q results in less disconnection.

For example, sample 1 is disconnected in 20 cycles and sample 2 is disconnected in 250 cycles, but sample 3 and sample 4 are not disconnected even in 700 cycles. Further, in sample 2, it was found that bleeding occurred during the test, and the patterning accuracy deteriorated. Therefore, it is necessary to use a solder resist that does not cause bleed while maintaining the above-described disconnection resistance.

Therefore, in order to determine such solder resist conditions, samples were prepared in which the amount of inorganic filler such as SiO ₂ for determining the thixotropy was changed, and a disconnection test was performed. As a result, if the filler amount is 5 wt% or less, 20
Although bleeding of 0 μm or more occurs, the amount of filler is reduced to 5 w
It was found that the bleed can be suppressed to 100 μm or less when it is more than t%.

When the amount of the filler is 10 wt% to 40 wt%
It was found that the use of% solder resist did not cause disconnection even at 200 cycles or more, and could prevent the occurrence of bleed. At this time, the Young's modulus of the solder resist is 5 kgf.
/ Mm ^{2 to} 70 kgf / mm ² . Note that in order to set the Young's modulus in the range of 5kgf / mm ² ~70kgf / mm ² is to polymerization consisting components Young's modulus of the main material in the solder resist to 1 kgf / mm ² or less is effective.

From the results of the above disconnection test, the Young's modulus was 5 k.
If a solder resist having a filler content within the range of gf / mm ^{2 to} 70 kgf / mm ² and a filler amount within the range of 10 wt% to 40 wt% is formed in the region pq, practically, no disconnection occurs even when mounted. It has been found that there is an effect that a suitable TCP semiconductor device can be manufactured.

If the Young's modulus and the amount of filler are set within the above ranges, only one of rubber-based, polyimide-based, epoxy-based, silicone-based, and urethane-based solder resists is used for each of the regions p and q. By doing so, the above effects can be obtained. Furthermore, in the above-described disconnection test, the thickness of the insulating protective film to be formed was set to 25 μm. However, the present invention is not limited to this.

Next, a TCP semiconductor device manufactured based on the results of the above-described disconnection test will be described with reference to FIGS.

FIG. 1A shows a plan structure of a flex TCP semiconductor device 21 as a tape carrier package semiconductor device, and FIG. 1B shows a cross-sectional view taken along the line CC ′.

The flex TCP semiconductor device 21 has a configuration in which a driver IC chip 24 as a semiconductor element is electrically connected to a tape carrier 23 manufactured using a polyimide substrate 22 as an insulating tape.

The tape carrier 23 includes slits 25 as through holes, inner leads 26, input outer leads 27, and output outer leads 28.
, And a copper wiring pattern as a metal wiring pattern including the test pad 29, a solder resist 30 and a solder resist 31 as an insulating protective film for insulatingly covering the slits 25 and the copper wiring pattern, and a polyimide substrate , Which are used for sending out and aligning the 22.

The driver IC chip 24 is electrically connected to the inner leads 26 via the Au bumps 33. The periphery of the connection is sealed with a resin 34.

Referring to FIG. 2, the tape carrier 23 in the flex TCP semiconductor device 21 having the above structure will be described below.
Will be described.

First, an adhesive is applied to the surface of the polyimide substrate 22 (UPILEX; trademark of Ube Industries) (step 1), and the polyimide substrate 22 is formed to form device holes, slits 25, sprocket holes 32,. Is punched out with a mold (step 2).

Next, one of 18 μm, 25 μm, and 35 μm thick copper foils is laminated on the polyimide substrate 22 (Step 3). In the slits 25, first, the opposite side to the surface on which the copper wiring pattern is to be formed later,
A solder resist 31 having a thickness of 5 μm is formed,
Cure at 60 ° C. for 60 minutes (step 4).

[0086] The solder resist 31, 31, is in the range Young's modulus of ^{5kgf / mm 2 ~70kgf / mm 2} , rubber-polyimide-epoxy filler amount is in the range of 10 wt% 40 wt% Any of a series, a silicone series, and a urethane series solder resist may be used. For example, even if cured, Young's modulus is 1 kgf / mm
It is possible to use a polyimide-based solder resist in which a base material having a value of ² or less is selected, and a filler amount of 38 wt% is mixed in the base material. In this case, the Young's modulus after curing is 16 kgf / mm ² . It corresponds to B in pencil hardness.

Then, a photoresist as an etching mask is applied to the surface of the copper foil (Step 5), and a desired pattern is baked by exposure (Step 6) and developed (Step 7). After forming a photoresist as an etching mask also in the device hole (Step 8), it is immersed in a copper foil etchant to form a desired copper wiring pattern (Step 9). After forming the copper wiring pattern in this manner, all the photoresists are removed by an organic solvent or dry etching (step 10).

Next, on the surface of the polyimide base material 22 on which the copper wiring pattern is formed, the same solder resists 31 as the solder resists 31 formed in the step 4 are covered so as to cover the slits 25 which are the bent portions. And print
Cure for about 2 hours (step 11).

Next, a tin plating having a thickness of 0.2 μm to 0.6 μm is formed on the exposed surface of the copper foil by an electroless plating method, and after the tin plating, curing is performed so as not to generate whiskers (step 12).

Next, the driver IC chip 24 is bonded via the Au bumps 33 to the inner leads 26 of the tape carrier 23 manufactured by the above steps (Step 1).
3). Then, the periphery of this joint is sealed with a resin 34 (Step 14), and the flex TCP semiconductor device 21 is completed.

As described above, in Step 4 and Step 11, the Young's modulus is 5 kgf / mm ^{2 to} 70 kg, respectively.
f / mm ² , and the amount of filler is 10 wt% to 4 wt.
Since the same solder resist in the range of 0 wt% is used, it is difficult for the copper wiring pattern to break, and FIG.
As shown in (1), the patterning accuracy can be improved to ± 0.2 mm without occurrence of bleed or peeling of the solder resist. Therefore, the production yield of the carrier tape 23 can be improved by about 2%.

Further, the warp of the flex TCP semiconductor device 21 can be suppressed to 1 mm or less, and the flex TCP semiconductor device 21 can be smoothly transported in the subsequent assembly process. Furthermore, since the same apparatus for forming the solder resist can be used in Steps 4 and 11, the manufacturing cost of the flex TCP semiconductor device 21 can be reduced.

In the steps 4 and 11, the same solder resist was formed. However, the present invention is not limited to this, and the Young's modulus is 5 kgf / mm ^{2 to} 70 kgf / mm ^2.
If the solder resist having the filler amount in the range of 10 wt% to 40 wt% is used in each step, the type of the solder resist in both steps may be different.

[Embodiment 2] An embodiment of a liquid crystal panel display device of the present invention will be described with reference to FIG.
It is as follows. For convenience of explanation, components having the same functions as those shown in the drawings of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

As shown in FIG. 5, a liquid crystal panel display device 51 according to the present embodiment includes a flex TCP semiconductor device 21...
It comprises a B board 53, a backlight 54, and a bezel 55.

In this case, the driver IC chip 24 of the flex TCP semiconductor device 21 functions as a driving semiconductor element.

The procedure for manufacturing the liquid crystal panel display device 51 will be described below.

First, the ACF is temporarily bonded to the liquid crystal panel 52 by pressure bonding. The ACF has a width of about 1.2 mm to about 3 mm, and is appropriately selected according to the size of the frame of the liquid crystal panel 52. Therefore, for example, if the width of the frame is small, a narrow ACF is selected. To temporarily compress the ACF, leave the ACF attached to the liquid crystal panel 52,
Press the tool heated to 90 ° C for about 2 seconds. At this time, the ACF reacts and is cured by heat, but is not completely cured so that the final pressure bonding can be performed later.

At the time when the temporary compression bonding of the ACF is completed, the ACF
Peel off the spacer attached to the flex T
The output outer leads 28 of the CP semiconductor devices 21 are temporarily press-bonded. At this time, the flex TCP semiconductor device 2
1 and the liquid crystal panel 52 are aligned with each other using the alignment marks formed thereon. Flex T
Since the CP semiconductor devices 21 are in a state of being connected in a reel shape before the temporary crimping, they are punched out with a die to form individual pieces. Then, at the time of temporary compression bonding, a tool heated to 100 ° C. is pressed with a load of 10 kgf / cm ² for 3 seconds.
Does not completely cure the ACF.

When the temporary press-bonding of the flex TCP semiconductor devices 21 is completed, the final press-bonding is performed. The final pressure bonding is performed at 200 ° C. for all the flex TCP semiconductor devices 21.
The tool is heated by applying a load of 35 kgf / cm ² for 20 seconds.

When the flex TCP semiconductor devices 21 are mounted on the liquid crystal panel 52, the input outer leads 27 of the flex TCP semiconductor devices 21 are mounted on the PWB board 53. As a mounting method on the PWB substrate 53,
There are a method by soldering and a method by ACF. A
In the mounting method using CF, the PWB substrate 53 is aligned, and all the flex TCP semiconductor devices 21 are mounted collectively.

Thereafter, a backlight 54 serving as a light source is mounted on the back side of the liquid crystal panel 52, and the entire unit including the flex TCP semiconductor device 21, the liquid crystal panel 52, the PWB substrate 53, and the backlight 54 is covered with a bezel 55.

As described above, the liquid crystal panel display device 51
Is manufactured. As described above, the liquid crystal panel display device 51 uses the flex TCP semiconductor device 21 having high disconnection resistance and a good production yield. Therefore, 1
0 inch or larger large liquid crystal panel display device with good yield,
It can be manufactured at low cost.

[0104]

As described above, according to the tape carrier package semiconductor device of the present invention, the metal wiring pattern provided on the insulating tape and the metal wiring pattern can be bent together with the insulating tape. In a tape carrier having an insulating protective film that insulates the front and back sides of a through hole provided in an insulating tape, and a tape carrier package semiconductor device in which a semiconductor element is mounted on the tape carrier, the front and back sides of the through hole each of the insulating protective film for insulating coating is configured Young's modulus of the solder resist in the range of ^{5kgf / mm 2 ~70kgf / mm 2} .

Therefore, when the tape carrier package semiconductor device is mounted on a large liquid crystal panel, the metal wiring pattern does not break even if a large stress is applied to the tape carrier package semiconductor device. Further, warpage of the tape carrier package semiconductor device can be suppressed, and the manufacturing yield of the tape carrier package semiconductor device can be improved.

As a result, a highly reliable tape carrier package semiconductor device can be provided at low cost.

As described above, in the tape carrier package semiconductor device according to the second aspect of the present invention, in the tape carrier package semiconductor device according to the first aspect, the solder resist is made of the same material on both sides of the through hole. It is the structure which consists of.

Therefore, when the solder resist is formed on both the front and back sides of the through hole, only one dedicated device is required and the solder resist can be easily managed.

According to the third aspect of the present invention, there is provided a tape carrier package semiconductor device according to the first or second aspect.
In the tape carrier package semiconductor device described in (1), the solder resist contains a filler for determining its viscosity in a range of 10 wt% to 40 wt%.

Therefore, bleeding is prevented when solder resist is printed, so that the patterning accuracy is improved, and the solder resist is not peeled off at the time of producing the tape carrier, so that the yield of producing the tape carrier is improved.

The tape carrier package semiconductor device of the invention according to claim 4 is as described above.
In the tape carrier package semiconductor device according to any one of the above, the solder resist is made of any of a rubber-based, polyimide-based, urethane-based, silicone-based, or epoxy-based material.

Therefore, the solder resist has an effect of functioning as a highly flexible insulating protective film.

As described above, according to the liquid crystal panel display device of the present invention, the metal wiring pattern provided on the insulating tape and the through-hole provided on the insulating tape so that the metal wiring pattern can be bent. A tape carrier having an insulating protective film that insulates the front and back sides of the hole,
In a tape carrier package semiconductor device having a driving semiconductor element mounted on the tape carrier so as to drive a liquid crystal panel, and a liquid crystal panel display device including the liquid crystal panel, each of the front and back sides of the through hole is insulated. The insulating protective film has a Young's modulus of 5
a structure is a solder resist in the range of ^{kgf / mm 2 ~70kgf / mm 2} .

Therefore, even if the tape carrier package semiconductor device is mounted on the liquid crystal panel, the metal wiring pattern does not break. Further, the warpage of the tape carrier package semiconductor device can be suppressed, and the production yield of the liquid crystal panel display device can be improved.

As a result, there is an effect that a highly reliable liquid crystal panel display device can be provided at low cost.

According to a sixth aspect of the present invention, as described above, in the liquid crystal panel display according to the fifth aspect, the solder resist is made of the same material on both sides of the through hole. Configuration.

Therefore, when the solder resist is formed on both sides of the through hole, only one dedicated device is required and the management of the solder resist is facilitated.

Therefore, the liquid crystal panel display device can be manufactured at low cost.

According to a seventh aspect of the present invention, as described above, in the liquid crystal panel display according to the fifth or sixth aspect, the solder resist contains 10 wt% of a filler for determining its viscosity. The content is within the range of 40 wt%.

Therefore, bleeding is prevented when solder resist is printed, so that patterning accuracy is improved, and the solder resist is not peeled off during tape carrier production, thereby improving the production yield of the liquid crystal panel display device. To play.

According to an eighth aspect of the present invention, as described above, in the liquid crystal panel display device according to any one of the fifth to seventh aspects, the solder resist is made of a rubber, a polyimide, or a urethane. It is a configuration made of any one of a system-based, silicone-based, or epoxy-based material.

Therefore, the solder resist has an effect of functioning as a highly flexible insulating protective film.

According to a ninth aspect of the present invention, as described above, in the liquid crystal panel display device according to any one of the fifth to eighth aspects, the liquid crystal panel has a tenth aspect.
The configuration is greater than inches.

Therefore, even if the tape carrier package semiconductor device is mounted on the liquid crystal panel, the metal wiring pattern is hardly disconnected, and a large-sized liquid crystal panel display device of 10 inches or more can be manufactured with good yield. .

[Brief description of the drawings]

FIG. 1 shows a structure of a tape carrier package semiconductor device according to an embodiment of the present invention, wherein FIG.
(B) is a sectional view taken along line CC ′ of (a).

FIG. 2 is a flowchart illustrating a process of manufacturing the tape carrier package semiconductor device of FIG. 1;

FIG. 3 is an explanatory diagram illustrating that bleed does not occur in the tape carrier package semiconductor device of FIG. 1;

4 (a), (b) and (c) are explanatory views illustrating a disconnection test method of the tape carrier package semiconductor device of FIG.

FIG. 5 is a structural diagram showing a structure of a liquid crystal panel display device using the tape carrier package semiconductor device of FIG. 1;

6A and 6B show the structure of a conventional tape carrier package semiconductor device, wherein FIG. 6A is a plan view and FIG.
FIG. 3 is a sectional view taken along line A ′.

FIG. 7 is a flowchart illustrating a step of manufacturing a tape carrier of the tape carrier package semiconductor device of FIG. 6;

8A and 8B show the structure of another conventional tape carrier package semiconductor device, wherein FIG. 8A is a plan view and FIG.
FIG. 4 is a sectional view taken along line -B ′.

FIG. 9 is a flowchart illustrating a process of manufacturing a tape carrier of the tape carrier package semiconductor device of FIG. 8;

FIG. 10 is an explanatory diagram illustrating a state when the tape carrier package semiconductor device of FIG. 6 is mounted.

FIG. 11 is an explanatory diagram illustrating a disconnection occurrence position when the tape carrier package semiconductor device of FIG. 7 is mounted.

FIG. 12 is an explanatory diagram for explaining occurrence of bleed in a conventional tape carrier package semiconductor device.

[Description of Signs] 21 Flex TCP semiconductor device (tape carrier package semiconductor device) 22 Polyimide base material (insulating tape) 23 Tape carrier 24 Driver IC chip (semiconductor element, driving semiconductor element) 25 Slit (through hole) 26 Inner lead (Metal wiring pattern) 27 Input-side outer lead (Metal wiring pattern) 28 Output-side outer lead (Metal wiring pattern) 29 Test pad (Metal wiring pattern) 51 Liquid crystal panel display 52 Liquid crystal panel

Claims (9)

[Claims] An insulating protective film for insulating a metal wiring pattern provided on an insulating tape and both sides of a through hole provided in the insulating tape so that the insulating tape can be bent together with the metal wiring pattern. And a tape carrier package semiconductor device in which a semiconductor element is mounted on the tape carrier, wherein each of the insulating protective films that insulate the front and back sides of the through hole has a Young's modulus of 5 kgf / mm ² or more. 70
A tape carrier package semiconductor device, which is a solder resist in a range of kgf / mm ² . 2. The tape carrier package semiconductor device according to claim 1, wherein the solder resist is made of the same material on both sides of the through hole. 3. The tape carrier package semiconductor device according to claim 1, wherein the solder resist contains a filler for determining the viscosity in a range of 10 wt% to 40 wt%. 4. The tape carrier according to claim 1, wherein said solder resist is made of any one of rubber-based, polyimide-based, urethane-based, silicone-based, and epoxy-based materials. Package semiconductor device. 5. A tape carrier having an insulating protective film for insulating a metal wiring pattern provided on an insulating tape and both sides of a through hole provided on the insulating tape so that the metal wiring pattern can be bent. And a tape carrier package semiconductor device having a driving semiconductor element mounted on the tape carrier so as to drive the liquid crystal panel, and a liquid crystal panel display device including the liquid crystal panel, wherein both sides of the through hole are insulated. Each of the insulating protective films has a Young's modulus of 5 kgf / mm ² to 70.
A liquid crystal panel display device comprising a solder resist in a range of kgf / mm ² . 6. The liquid crystal panel display device according to claim 5, wherein said solder resist is made of the same material on both sides of said through hole. 7. The liquid crystal panel display device according to claim 5, wherein the solder resist contains a filler for determining the viscosity in a range of 10 wt% to 40 wt%. 8. The liquid crystal panel according to claim 5, wherein the solder resist is made of any one of rubber, polyimide, urethane, silicone, and epoxy. Display device. 9. The liquid crystal panel display device according to claim 5, wherein said liquid crystal panel is 10 inches or more.