JPH11119263A - Production of antiferroelectric liquid crystal panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an antiferroelectric liquid crystal panel manufacturing method capable of dealing with an antiferroelectric liquid crystal panel for amusement. SOLUTION: This method consists of a process for forming a black matrix 13 on a 1st substrate 11, forming a color filter 14 on the matrix 13, forming an overcoat 15 on the filter 14, forming a transparent electrode pattern 16 on the overcoat 15, forming a 1st insulating film 17 on the pattern 16, forming a 2nd insulating film 18 on the film 17, forming an orientation film 19 on the film 18, and then executing orientation processing, a process for forming a transparent electrode pattern 16 on a 2nd substrate 12, forming a 1st insulating film 17 on the pattern 16, forming a 2nd insulating film 18 on the film 17, forming an orientation film 19 on the film 18, and executing orientation processing, a process for spraying a gap material 20, and a superposing process using alignment marks.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing an antiferroelectric liquid crystal panel.

[0002]

2. Description of the Related Art A conventional method of manufacturing an antiferroelectric liquid crystal panel will be described with reference to FIG. On the first substrate 11, a black matrix 13 is formed on a lattice using a metal such as chromium. Further, using the alignment marks provided around the black matrix 13, a color filter 14 is formed thereon. Further, an overcoat 15 is provided thereon using a photosensitive acrylic resin or the like.

Further, a SiO film (not shown) is formed with a thickness of 20 to 30 nm, and a transparent electrode 16 is further formed thereon with a resistance of 10 to 20 Ω / □ by using a low-temperature sputtering method or the like.
Then, the transparent electrode 16 is placed on the black matrix 13 or CF.
Patterning is performed in accordance with 14 alignment marks (not shown) to form a transparent electrode pattern. further,
An alignment film 19 made of polyimide or polyamic acid as a raw material is applied thereon to a thickness of 50 nm, and is subjected to an alignment treatment using a rubbing method.

Next, the transparent electrode 1 is placed on the second substrate 12.
6 is formed, and a transparent electrode patterning is formed so as to be orthogonal to the paired first substrates 11.

Next, the first insulating film 1 is made of tantalum pentoxide.
7 using a low-temperature sputtering method,
It is formed with a thickness of nm.

As the first insulating film 17, a film obtained by applying a hydrolyzate of tetraalkoxysilane using an offset printing method or the like and baking it at a temperature of 200 ° C. to 250 ° C. for about 1 hour is used.

Further, an alignment film 19 made of polyimide or polyamic acid as a raw material is applied thereon to a thickness of 50 nm, and subjected to an alignment treatment using a rubbing method.

Next, a seal 22 is formed by screen-printing a thermosetting epoxy adhesive in a predetermined pattern on the first substrate 11.

Next, silica beads 20 having a sphere diameter of 1.5 μm to 1.7 μm are formed on the second substrate 12 as a gap material.
Spray. Spraying number is silica beads 20 in order to give a cell gap uniform is the 500 / mm ² to 1400 pieces / mm ^2.

Next, a first substrate 11 and a second substrate 12
Using an alignment mark provided in advance. At this time, in order to thermally cure the seal 22, 1.
120 ° C. while applying a pressure of 0 to 2.0 kg / cm ²
Bake in a furnace at a temperature of ℃ 160 ° C. for 1 hour to 2 hours.

Thereafter, the bonded substrate is cut into a predetermined size to obtain a liquid crystal panel. Thereafter, the antiferroelectric liquid crystal is heated to a temperature equal to or higher than the Iso temperature by using a heating vacuum injection method or a heating two-hole injection method (not shown) in the liquid crystal panel, and then injected into the cell. And

[0012]

The cell gap of the antiferroelectric liquid crystal panel is as thin as 1.5 μm to 1.7 μm.
For this reason, when the first substrate and the second substrate are overlapped to form a liquid crystal panel, when fine conductive particles of 1.7 μm or more or fine metal powder generated from a jig in the process enter therein, an The possibility of short-circuiting in the transparent electrode pattern is very large.

The driving voltage of the antiferroelectric liquid crystal is as high as ± 30 V with respect to V in a normal super twisted nematic mode (hereinafter, STN). Therefore, the voltage applied between the unit cell gaps of the upper and lower electrodes is 15 V / μm
And very high.

Therefore, even if the fine metal powder causing the short circuit in the vertical direction is 1.7 μm or more, which is larger than the cell gap, or even if small dust having a size of less than 1.7 μm is projected on the alignment film, the particles are not removed. The possibility of vertical conduction due to discharge becomes extremely high, which causes vertical shorts.

In a conventional STN liquid crystal panel, an insulating film having a thickness of 60 nm to 70 nm is applied on one of the transparent electrodes of the first substrate and the second substrate in order to prevent vertical short-circuit.

In a conventional antiferroelectric liquid crystal panel having a narrow cell gap, since the cell gap is narrow, 100% of the transparent electrode is provided on one of the transparent electrodes of the first substrate and the second substrate.
An insulating film having a thickness of about 150 nm to 150 nm is applied. However, vertical short-circuiting cannot be completely prevented and causes a reduction in yield.

As a remedy, when a tantalum pentoxide film having a thickness of 100 nm to 150 nm is formed on both transparent electrodes of the first substrate and the second substrate by a low-temperature sputtering method, the vertical short-circuit is reduced and the yield is reduced. improves. However,
There are drawbacks in that the film forming process is a batch process, that maintenance of the film forming apparatus is costly, and that a uniform film thickness cannot be obtained over the entire surface, resulting in low mass productivity.

Further, an organic material containing a hydrolyzate of tetraalkoxysilane is applied by offset printing to form an organic material.
It is possible to convert to SiO2 by heating and baking at 0 ° C. Since this material can be subjected to offset printing, it has high productivity and is practical. However, 15
Even when the coating is applied as thick as 0 nm to 200 nm, the film quality after film hardening is soft and the fine metal powder penetrates the insulating film due to the reason that the firing temperature does not reach 450 ° C. or more required to obtain the actual hardness. , Vertical shorts cannot be suppressed.

In the case of an insulating film of a hydrolyzate of tetraalkoxysilane, the relative dielectric constant after curing of the film is as low as 3 or less. Is generated in the insulating film, and an appropriate voltage is not applied to the liquid crystal.

Further, an organic material containing a tetraalkoxysilane / and a hydrolyzate of titanium is heated and baked at 350 ° C. to form titanium oxide to form an insulating film. This film has a high relative dielectric constant of 7 to 13, is capable of offset printing, and has high mass productivity. In a liquid crystal panel in which this insulating film is applied with a thickness of 150 nm, a voltage drop applied to the liquid crystal can be suppressed.

However, the titanium oxide film has cracks on the film surface, and the cracks affect the uniform coating of the alignment film thereon. Therefore, even if rubbing is performed,
The crack portion becomes defective in orientation and a good orientation state cannot be obtained.

Further, the titanium oxide film has a thickness of 100 to 150 nm.
Alternatively, even when the film is formed with a film thickness of 150 nm or more, the film quality is soft and short-circuiting occurs in the vertical direction, which causes a reduction in yield.

In addition, when a tantalum pentoxide film is used as an insulating film, the surface roughness is higher than that of the offset printing method, and the surface roughness of the alignment film formed thereon is also affected. Would. For this reason, the orientation of the antiferroelectric liquid crystal is deteriorated, and the display quality is reduced.

In the STN mode panel, in order to improve the display characteristics, the twist angle of the liquid crystal molecules is twisted to about 180 ° to 270 °, and the display is performed with a sharp optical change. For this reason, the pretilt angle of the alignment film needs to be 2 ° or more. Therefore, it is necessary to pay attention to the selection of the alignment film material and the setting of the thickness in order to obtain the superior characteristics of the STN panel.

Here, the thickness of the alignment film is 50 nm to 70 nm in order to take advantage of the characteristics of polyimide as a material.
In the STN mode, if the film thickness is less than 50 nm and becomes thin, even if there is a structural difference peculiar to the polyimide, it becomes impossible to obtain a desired pretilt angle of 2 ° or more and uniform alignment over the entire panel is obtained. Display quality is degraded.

In the conventional antiferroelectric liquid crystal panel, an insulating film is formed on one of the first substrate and the second substrate. However, in this liquid crystal panel, even when the voltage waveform at the time of AC driving is symmetric, when the antiferroelectric liquid crystal returns from the positive ferroelectric state to the antiferroelectric state, and when the antiferroelectric liquid crystal returns to the antiferroelectric state from the negative ferroelectric state. The voltage applied to the plus and minus sides when returning to the dielectric state is slightly different due to the asymmetry of the panel structure. Furthermore, due to this asymmetry, the charges accumulated in the film gradually accumulate. The anti-government state at reset gradually returns to a different state. For this reason, the black level is different, which eventually causes an afterimage to remain.

[Object of the Invention] It is an object of the present invention to solve the above-mentioned problems and to provide a method of manufacturing an antiferroelectric liquid crystal panel which can be applied to an antiferroelectric liquid crystal panel for amusement.

[0028]

In order to achieve the above object, a method of manufacturing an antiferroelectric liquid crystal panel according to the present invention provides the following constitution.

According to the method of manufacturing an antiferroelectric liquid crystal panel of the present invention, a black matrix is provided on a first substrate, a color filter is provided on the black matrix, an overcoat is provided on the color filter, and a transparent electrode is provided. Providing a pattern, further providing a first insulating film thereon, providing a second insulating film thereon, further providing an alignment film thereon, and performing an alignment process; A transparent electrode pattern is provided on the
Is provided, and a second insulating film is further provided thereon,
The method is characterized by a step of providing an alignment film and performing an alignment treatment, a step of further dispersing a gap material, and a step of overlapping using an alignment mark.

[Operation] In the method of manufacturing an antiferroelectric liquid crystal panel of the present invention, a first insulating film is applied to a thickness of 50 nm to 70 nm on the first substrate having a color filter, and furthermore, A second insulating film of 50 nm to 70 n
m and thermosetting at a temperature not higher than the heat resistance temperature of the color filter.
0 nm to 70 nm in thickness, and a second
By applying an insulating film having a thickness of 50 to 70 nm and thermally curing it at 350 ° or more, the film hardness is higher than that of an insulating film applied at a time of 100 nm or more, and it is possible to suppress occurrence of vertical short-circuit. Become. In addition, the improvement in the flatness of the film surface shape improves the orientation of the antiferroelectric liquid crystal, and enables a panel manufacturing method with good display quality.

The antiferroelectric liquid crystal panel of the present invention is applied on both sides of the first substrate and the second substrate in two times, and the first film thickness at this time is 50 nm to 70 nm, for a total of 100 nm.
By applying the above film thickness, the film hardness becomes higher than that of the insulating film applied 100 nm or more at one time, and it is possible to suppress the occurrence of vertical short-circuit.

Further, according to the above-mentioned manufacturing method, cracks are not generated on the surface of the insulating film, and the surface roughness becomes flatter than that applied to a film thickness of 100 nm or more by one coating, so that the insulating film is formed thereon. The surface of the alignment film to be formed is further improved, and the alignment of the antiferroelectric liquid crystal is improved.

Further, the thickness of the alignment film is set to 10 nm to 2 nm.
By setting the thickness to 5 nm, the characteristics of the pretilt angle which various polyimide materials originally have can be suppressed to 1 ° or less by rubbing with a cotton fiber, so that good alignment of the antiferroelectric liquid crystal can be achieved.

Further, the asymmetry of the driving voltage applied to the antiferroelectric liquid crystal during the AC driving is eliminated, the afterimage phenomenon and the image sticking are eliminated, and an antiferroelectric liquid crystal panel having good display quality can be obtained.

[0035]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the method for manufacturing an antiferroelectric liquid crystal panel according to the present invention will be described in detail below with reference to the drawings. FIG. 1 is a cross-sectional view of the antiferroelectric liquid crystal panel used in the embodiment. First, a black matrix 13 is provided on the first substrate 11, and a color filter 14 is provided thereon. Further, an overcoat 15 is further provided thereon, a transparent electrode 16 is provided, a first insulating film 17 and a second substrate 18 are provided, an alignment film 19 is provided, and an alignment process is performed. The second substrate 12 includes a transparent electrode 16, a second insulating film 18 and an alignment film 19, and performs an alignment process.

Next, the manufacturing method of the present invention will be described with reference to FIGS. A black matrix 13 is formed on a lattice using a metal such as chromium on the first substrate 11. Further, using the alignment marks provided around the black matrix 13, a color filter 14 is formed thereon. Further, a photosensitive acrylic resin is applied thereon with a spinner to form an overcoat 15.

Further, a transparent electrode 17 is formed thereon with a sheet resistance of 4 to 7 Ω / □ by using a low-temperature sputtering method or the like.
After that, the transparent electrode 17 is aligned with the alignment mark (not shown) of the black matrix 13 or the color filter 14 and patterning is performed.

Further, an organic compound containing a hydrolyzate of tetraalkoxysilane / and titanium (AT-
732 or AT-902 (manufactured by Nissan Chemical Industries, Ltd.) is used as the first insulating film 17 by printing using an insulating film solution having a resin concentration of 6 wt% using an offset printing method or the like. At this time, the thickness of the first insulating film 17 is adjusted and applied so as to be about 65 nm. Thereafter, the film is pre-cured at a temperature of 80 ° C., irradiated with light of 250 nm or more at 5000 mJ, and baked at 250 ° C. for 30 minutes to 1 hour to be cured.

Thereafter, an insulating film solution of a similar solution (AT-732 or AT-902, manufactured by Nissan Chemical Industries, Ltd.) having a resin concentration of 6 wt% is formed on the first insulating film 17 by offset printing or the like. Is printed on the second insulating film 1 again.
8 is assumed. At this time, the thickness of the second insulating film 18 is 65 n
m, but the thickness of the first insulating film 17 is measured, and adjusted so that the total thickness of the first insulating film 17 and the second insulating film 18 does not exceed 150 nm. I do. Thereafter, similarly, pre-curing is performed at 80 ° C., and light of 250 nm is irradiated at 5000 mJ or more, followed by baking and curing at 250 ° C. for 30 minutes to 1 hour.

Next, the transparent electrode 1 is placed on the second substrate 12.
6 is provided, and patterning is performed so as to be orthogonal to the opposing first substrate 11. Furthermore, tetraalkoxysilane /
And organic compounds containing a hydrolyzate of titanium (AT-7
32 or AT-902 / Nissan Chemical Industries, Ltd.)
The insulating film solution having a resin component concentration of 6 wt% is printed by using an offset printing method or the like to form a first insulating film 17. At this time, the thickness of the first insulating film 18 is adjusted and applied so as to be about 65 nm. Then, pre-cure at 80 ° C,
After irradiating the light of 250 nm with 5000 mJ or more,
Bake at 30 ° C for 30 minutes to 1 hour to cure.

Thereafter, an insulating film solution having a resin concentration of 6 wt% of the same solution (AT-732 or AT-902 / Nissan Chemical Industries, Ltd.) is applied on the first insulating film 17 by offset printing or the like. Is printed on the second insulating film 1 again.
8 is assumed. At this time, the thickness of the second insulating film 18 is 50 to
The first insulating film 1 is adjusted to be about 65 nm.
7, the first insulating film 17 and the second insulating film 1 are measured.
8 is adjusted and applied so that the total film thickness does not exceed 150 nm. Then, it is precured at 80 ° C.
m at a temperature of 250 ° C.
Bake for 1 minute to 1 hour to cure.

Next, an orientation film 19 of polyimide or polyamic acid is applied to a thickness of 10 to 25 nm on the insulating film provided on the first substrate 11 and the second substrate 12,
Firing at a temperature of from 250C to 250C for 1 hour to 1.5 hours. When a far-infrared firing furnace is used, firing is performed for 20 to 40 minutes.

FIG. 2 shows a sectional view of the substrate and the roughness of the alignment film surface. The single film thickness of the first insulating film 17 and the second insulating film 18 after the alignment film is cured is 50 nm to 70 nm, and the total film thickness is 1 nm.
00 nm to 160 nm. Further, an alignment film 19 is applied thereon in a thickness of 15 nm to 25 nm and cured.

FIG. 5 shows the surface roughness of the alignment film on the insulating film and the cross-sectional view of the substrate formed by the above method. Measurement was performed using an atomic force microscope (SPI-3700, manufactured by Seiko Denshi Kogyo KK).
Ra ≦ 5.5 nm, Rmax ≦ 27.5 on the substrate 11 side
nm, Rz ≦ 16.5 nm. Also, the transparent electrode 16
Only on the second substrate 12 side, Ra ≦ 4.5 nm, Rma
Let x ≦ 17.5 nm and Rz ≦ 10.5 nm.

Thereafter, an alignment treatment is performed by a rubbing method. At this time, a relatively soft fibrous cotton fiber 27 is used as the material of the rubbing material. The rubbing density was determined by the following formula (1) using the rubbing device shown in FIG.
600 to 2200. Rubbing density = (((2πr × ω) / 60) −ν) × n (1)

However, in the antiferroelectric liquid crystal panel, the alignment is not performed unless the pretilt angle is 1 ° or less, so that the alignment film thickness needs to be 250 ° or less. This is because, by reducing the film thickness, different orientation dependence depending on the kind of the polyimide as the alignment film material is reduced, and the pretilt angle is set to 1 ° or less.

The surface of the antiferroelectric liquid crystal panel prepared by using the insulating film formed by the above method and by the above-mentioned alignment treatment method was observed. As a result, in the related art, alignment defects are conspicuous, the black state when the driving voltage is “off” is deteriorated, and high contrast cannot be obtained. However, in the present invention, the black state at the time of the drive voltage “off” is improved, high contrast is obtained, and display quality is improved.

FIG. 7 shows a film hardness measuring method obtained by the present invention. A first insulating film 17 and a second insulating film 18 are applied on a metal plate 33 by a predetermined method and cured. In the measurement, one of the terminals on both sides where the ammeter 29 and the power supply 31 are connected in series by the wiring 32 is connected to the conductive needle 30 with a load meter, and the other terminal is connected to the metal plate 33.

Thereafter, the wire 30 with the weight meter is lowered, and the weight that is conducted to the metal plate 33 is defined as the film load (g), and the value converted into a film thickness of 100 nm is defined as the film hardness.

FIG. 8 shows the film hardness when the predetermined thickness of 110 to 140 nm is measured by repeating the application of the insulating film and curing the film twice in the upper part of “the hardness of the insulating film applied twice”. The lower part shows the film hardness when the insulating film is applied and cured only once to form a predetermined thickness of 120 nm and measured.

From the measurement results, it is found that the method of forming an insulating film coated twice according to the present invention has a film load of 2500 g / 100 nm, and the hardness of the insulating film having a predetermined thickness applied 560 only once.
g / 100 nm.

Next, a thermosetting adhesive is screen-printed on the first substrate 11 in a predetermined pattern to form a sealing material 22. Next, silica beads 20 having a sphere diameter of 1.5 μm to 1.8 μm are formed on the second substrate 12 as a gap material.
Spray. At this time, in order to obtain a uniform cell gap, the number of the silica beads 20 is 500 / mm ^{2 to} 1000 / m ^2.
Spray in an amount of m ² .

Next, the first substrate 11 and the second substrate 12
Using an alignment mark (not shown) provided beforehand. At this time, 1.0 to 2.1 kg / cm ² is applied to the substrates superposed to cure the sealing material 22.
At a temperature of 120 ° C to 160 ° C for 1 hour
Bake in a furnace for 2 hours.

Thereafter, the completed liquid crystal panel is cut into a predetermined size (not shown), and an antiferroelectric liquid crystal MX-K59-1h (Mitsubishi Gas) is formed by using a heating vacuum injection method, a two-hole injection method, or the like. (Chemical Co., Ltd.) 21 is heated above the Iso temperature and then injected into the cell to form an antiferroelectric liquid crystal panel.

FIG. 9 shows optical characteristics measured by applying a 100 Hz triangular wave. In the antiferroelectric liquid crystal panel coated with the insulating film on both sides, the hysteresis curve 34 indicating the transmittance-voltage curve on the + side is symmetrical, but in the antiferroelectric liquid crystal panel coated with the insulating film on only one side, the hysteresis curve is displayed. 35 loses symmetry.

Next, FIG. 10 shows the results of the asymmetric experiment.
Shows optical characteristics measured with an AC voltage, with wiring attached to opposing electrodes of an actual antiferroelectric liquid crystal panel.

In an antiferroelectric liquid crystal panel having a one-sided insulating film formed by applying an insulating film to one of the first substrate 11 and the second substrate 12, the wiring attached to the electrode at the time of measurement is exchanged. This causes a difference in values such as steepness of optical characteristics, bias voltage, and contrast. However,
In an antiferroelectric liquid crystal panel in which an insulating film is applied to both sides of the first substrate 11 and the second substrate 12, the steepness of the optical characteristics, the bias voltage, and the contrast remain only within the range of the measurement error even if the wiring of the measurement terminals is replaced. There is no difference in the values such as.

[0058]

According to the method for manufacturing an antiferroelectric liquid crystal panel of the present invention, a first insulating film having a thickness of 50 to 70 nm is applied to a first substrate having a color filter, and a first insulating film is further applied thereon. (2) applying an insulating film of 50 to 70 nm and thermally curing the same at or below the heat resistance temperature of the color filter; and applying a first insulating film of 50 to 70 nm on the paired second substrate side; On top of that, a second insulating film is
By coating at a thickness of 0 nm and thermally curing at 350 ° or more, the insulating film applied at a time of 100 nm or more
The film hardness is increased, and it is possible to suppress the occurrence of vertical short-circuit.

The antiferroelectric liquid crystal panel of the present invention is divided into two portions on both sides of the first substrate and the second substrate.
By coating a film having a thickness of 100 nm, the film hardness is higher than that of an insulating film having a thickness of 100 nm or more applied at one time, and it is possible to suppress occurrence of vertical short-circuit.

Further, according to the above manufacturing method, cracks are not generated on the surface of the insulating film, and the surface roughness is made flatter than that applied to a film thickness of 1000 ° or more by a single coating, so that the insulating film is formed thereon. The surface of the alignment film is further improved, and the alignment of the antiferroelectric liquid crystal is improved.

The thickness of the alignment film is 10 nm to 25 nm.
By performing rubbing treatment using cotton fibers, the pretilt angle characteristic of various polyimide materials can be suppressed to 1 ° or less regardless of the rubbing treatment. Becomes possible.

[Brief description of the drawings]

FIG. 1 is a drawing showing a method of manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 2 is a view illustrating a method of manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 3 is a view illustrating a method of manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 4 is a view illustrating a method of manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 5 is a drawing showing a film configuration on a substrate surface in a method for manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 6 is a view showing a rubbing density in a method for manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 7 is a drawing showing a method of measuring film hardness in a method for manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 8 is a diagram showing a hysteresis characteristic of the antiferroelectric liquid crystal panel according to the embodiment of the present invention.

FIG. 9 is a view showing a method of measuring film hardness in a method of manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 10 is a diagram showing an asymmetric experimental result of a method of manufacturing an antiferroelectric liquid crystal panel according to an embodiment of the present invention.

FIG. 11 is a cross-sectional view of a conventional antiferroelectric liquid crystal panel.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 1st board | substrate 12 2nd board | substrate 13 Black matrix 14 Color filter 15 Overcoat 16 Transparent electrode pattern 17 1st insulating film 18 2nd insulating film 19 Alignment film 20 Silica beads 21 Antiferroelectric liquid crystal 22 Sealing material Reference Signs List 23 Upper polarizing plate 24 Lower polarizing plate 25 Ultraviolet irradiation lamp 26 Rubbing roll 27 Cotton fiber 28 Mounting table 29 Ammeter 30 Conductive needle with load meter 31 Power supply 32 Wiring 33 Metal plate 34 Antiferroelectric liquid crystal coated with insulating film on both sides Hysteresis curve of panel 35 Hysteresis curve of antiferroelectric liquid crystal panel coated with one side insulating film

Claims (4)

[Claims] A black matrix is provided on a first substrate, a color filter is provided on the black matrix, an overcoat is provided thereon, a transparent electrode pattern is provided, and a first insulating film is provided thereon. Providing a second insulating film thereon, further providing an alignment film thereon, and performing an alignment process; providing a transparent electrode pattern on the second substrate; A step of providing an insulating film, further providing a second insulating film thereon, providing an alignment film, performing an alignment process, a step of spraying a gap material, and a step of superimposing using an alignment mark. A method for manufacturing an antiferroelectric liquid crystal panel, comprising: 2. The method for manufacturing an antiferroelectric liquid crystal panel according to claim 1, wherein the relative dielectric constant of the insulating film is 13 or more, and the total thickness of the first insulating film and the second insulating film is 120nm
A method for producing an antiferroelectric liquid crystal panel, wherein the thickness is within 150 nm. 3. The method for manufacturing an antiferroelectric liquid crystal panel according to claim 1, wherein a black matrix is provided on the first substrate, a color filter is further provided, and an overcoat is provided on the color filter. In the step of providing a transparent electrode pattern thereon, further providing a first insulating film and a second insulating film thereon, and further providing an alignment film, the value of the surface roughness of the alignment film surface is measured by an atomic microscope. And Ra is 5.5 nm or less, Rmax is 27.5 nm or less, and Rz is 16.5 nm.
The following is a process of providing a transparent electrode pattern on a second substrate, further providing a first insulating film and a second insulating film thereon, and further providing an alignment film. Is 4.5 nm or less for Ra and 17.5 n for Rmax by atomic force microscopy.
m and an Rz of 10.5 nm or less. 4. The method for manufacturing an antiferroelectric liquid crystal panel according to claim 1, wherein the thickness of the alignment film of the first substrate and the second substrate is 10 nm to 2 nm.
A method for producing an antiferroelectric liquid crystal panel, wherein the rubbing material is cotton fiber and the pretilt angle of the alignment film surface is in a range of 0.7 to 1.0 °.