JPH11111903A - Bridge-type semiconductor device and manufacture thereof - Google Patents

Bridge-type semiconductor device and manufacture thereof

Info

Publication number
JPH11111903A
JPH11111903A JP9287868A JP28786897A JPH11111903A JP H11111903 A JPH11111903 A JP H11111903A JP 9287868 A JP9287868 A JP 9287868A JP 28786897 A JP28786897 A JP 28786897A JP H11111903 A JPH11111903 A JP H11111903A
Authority
JP
Japan
Prior art keywords
terminal
semiconductor device
bridge
type semiconductor
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9287868A
Other languages
Japanese (ja)
Inventor
Koji Furusato
広治 古里
Kazuhiko Sato
和彦 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP9287868A priority Critical patent/JPH11111903A/en
Publication of JPH11111903A publication Critical patent/JPH11111903A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To widen distance between terminals and thereby radiate heat from a semiconductor chip efficiently by bending a first and a second terminal for AC input nearly at right angles. SOLUTION: In a semiconductor device 1, for example, semiconductor chips 14 are located on lead frames, having a die pad section 11 and a terminal section 17 and those lead frames are connected by soldering or other method using connectors 16 to form a bridge circuit. After forming a resin section 15 by transfer molding or other methods, unwanted parts of the lead frames are cut off to form a bridge-type semiconductor device. Then, L-shaped sections A, B formed beforehand in parts of the terminal sections located on both sides are bent from inside nearly at right angles to make them terminal sections 17a, 17b. Bent sections 11a, 11b are parts of the die pads bent nearly at right angles. Through this method, distance can be secured between terminals, and thereby heat radiating property of the device can be increased.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する分野】本発明は,電子機器等に使用され
るブリッジ型半導体装置の構造と、その製造方法に関す
るものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a structure of a bridge type semiconductor device used for electronic equipment and the like, and a method of manufacturing the same.

【0002】[0002]

【従来の技術】[Prior art]

(2) 従来より、ブリッジ半導体装置は、既登録第18955
18号ブリッ型ジ半導体装置に述べられているように、
リードフレーム上に半導体チップを組立した後、トラン
スファーモールド法等により樹脂封止して製造している
が、近年電子機器の小型化、高信頼度に関心が高まり安
全規格を満足する半導体装置が要求されている。特に回
路構成上一次側(交流入力)に使用されるブリッジ型半
導体装置には、絶縁距離に関する沿面、空間距離が一定
距離以上必要となっている。
(2) Conventionally, the bridge semiconductor device has already been registered as 18955
As described in No. 18 Bridge type semiconductor device,
After assembling a semiconductor chip on a lead frame, it is manufactured by resin molding by transfer molding method, etc.In recent years, interest in miniaturization and high reliability of electronic equipment has increased, and semiconductor devices that meet safety standards are required. Have been. In particular, the bridge type semiconductor device used on the primary side (AC input) in terms of the circuit configuration requires a creeping surface and a space distance with respect to the insulation distance of a certain distance or more.

【0003】図4はブリッジ型半導体装置の絶縁距離を
確保するために端子を2次加工した従来例を示し(a)
は正面図、(b)は側面図で図中15はモールド樹脂
部、12,12a,12bは端子部で中間の端子12
a,12bを上方に折曲げ加工を施している。この構造
は絶縁距離を確保できるが加工性が悪く端子形状が不安
定となり、又プリント基板等に取付る際に端子先端か端
子12と12a、又は12bが揃わないためトラブルの
原因となり、このために端子12a、12bを端子12
に比し予め少し長く形成する必要がある。
FIG. 4 shows a conventional example in which terminals are secondarily processed in order to secure an insulation distance of a bridge type semiconductor device (a).
Is a front view, (b) is a side view, and in the figure, 15 is a mold resin portion, and 12, 12a and 12b are terminal portions and intermediate terminals 12
a and 12b are bent upward. With this structure, the insulation distance can be ensured, but the workability is poor and the terminal shape becomes unstable. Also, when the terminal is mounted on a printed circuit board or the like, the terminal ends or the terminals 12 and 12a or 12b are not aligned. To the terminals 12a and 12b
Must be formed a little longer in advance.

【0004】又予め端子間隔の広いリードフレームを形
成すると使用時にブリッジ型半導体装置が大きくなる等
の欠点があった。又半導体チップから発生する熱を効率
的に発散させるために、ダイパット部の面積を広くした
り、熱伝導の良い材質を使用しているが、ブリッジ型半
導体装置が大きくなり高価となる等の欠点があった。
Further, if a lead frame having a large terminal interval is formed in advance, there is a disadvantage that the bridge type semiconductor device becomes large in use. Also, in order to efficiently radiate the heat generated from the semiconductor chip, the area of the die pad portion is increased or a material with good heat conductivity is used, but the disadvantages are that the bridge type semiconductor device becomes large and expensive. was there.

【0005】[0005]

【本発明が解決しようとする課題】本発明は上記従来技
術の問題点を鑑みてなされたもので、その目的は、半導
体装置の構造を工夫することにより、端子間隔が広くで
きる。半導体チップからの発熱を効率的に発散でき、生
産性の高いものを提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and an object of the present invention is to increase the distance between terminals by devising the structure of a semiconductor device. It is an object of the present invention to provide a semiconductor device capable of efficiently dissipating heat from a semiconductor chip and having high productivity.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に請求項1に係る本発明のブリッジ型半導体装置は、リ
ードフレームの交流入力用の第1及び第2端子の一部に
第1及び第2屈曲部を (3) 有す構造とし、ブリッジ回路構成した後、トランスファ
ーモールド法等により樹脂封止し、不要な部分を切断加
工するとともに、前記屈曲部の近傍で略直角方向に折曲
げ加工を施すことを特徴とする。このように交流入力用
の第1及び第2端子を略直角方向に折曲げ加工すること
により、ブリッジ型半導体装置の端子間の距離を確保す
ることが可能である。請求項2の発明は両端の端子を機
械加工により容易に直角方向に折曲げを可能にするため
に端子の一部を予めL字状に形成したものである。又、
請求項3に記載したブリッジ型半導体装置のダイパット
部は、半導体素子から発生する熱を効果的に放熱するた
め、ダイパット部の一部を半導体チップを搭載した面に
対して、略直角方向に折曲げ加工を施し、ダイパット部
の面積を広くなる構造にしたことを特徴とする。このよ
うにダイパット部の面積を広くすれば、放熱性の良い半
導体装置を容易に実現することができる。
According to a first aspect of the present invention, there is provided a bridge-type semiconductor device according to the first aspect of the present invention, wherein first and second terminals for AC input of a lead frame are connected to first and second terminals. After forming a bridge circuit with a structure having the second bent portion (3), resin sealing is performed by a transfer molding method or the like, and unnecessary portions are cut and bent in a substantially right angle direction near the bent portion. It is characterized by processing. By bending the first and second terminals for AC input in a substantially perpendicular direction in this manner, it is possible to secure a distance between the terminals of the bridge-type semiconductor device. In the invention of claim 2, a part of the terminal is formed in an L-shape in advance so that the terminal at both ends can be easily bent in a right angle direction by machining. or,
The die pad portion of the bridge type semiconductor device according to the third aspect is configured so that a part of the die pad portion is bent in a direction substantially perpendicular to a surface on which the semiconductor chip is mounted, in order to effectively radiate heat generated from the semiconductor element. It is characterized in that it is bent so as to increase the area of the die pad portion. By thus increasing the area of the die pad portion, a semiconductor device having good heat dissipation can be easily realized.

【0007】[0007]

【発明の実施の形態】以下、添付図面を参照して本発明
に係る半導体装置の実施形態を説明する。なお、図面の
説明において同一部材には同じ符号を付し、重複する説
明は省略する。図1は本発明の実施例を示す斜視図、図
2は本発明の実施例を説明するための表面の樹脂を除い
た正面図(a)、(b)は側面図、(c)は平面図であ
る。。この半導体装置1は、図2に示すダイパット部1
1と端子部17を有するリードフレームに半導体チップ
14を配置し、接続子16を用いてブリッジ回路になる
ようにはんだ付け等で接続する。そして、トランスファ
ーモールド法等により樹脂部15を形成した後、リード
フレームの不要部分を切断により除去してブリッジ型半
導体装置とする。そして、両端に配置された端子部17
a、17bの一部に予め形成されたL字状部A,Bを内
側より略直角(矢印方向)に折曲げ加工する。このブリ
ッジ型半導体装置の樹脂部は横約20mm、高さ約20
mm、厚さ約4mmにされており、端子部は厚さ約5m
mで、間隔は約5.5mmにされている。なお、図2に
おいて11a、11bはダイパット部の一部を略直角方
向に曲げた折曲げ部である。 (4)
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the accompanying drawings. In the description of the drawings, the same members will be denoted by the same reference symbols, without redundant description. FIG. 1 is a perspective view showing an embodiment of the present invention. FIG. 2 is a front view (a), (b) is a side view and FIG. FIG. . This semiconductor device 1 has a die pad 1 shown in FIG.
The semiconductor chip 14 is arranged on a lead frame having the terminal 1 and the terminal portion 17 and connected by soldering or the like so as to form a bridge circuit using the connector 16. Then, after forming the resin portion 15 by a transfer molding method or the like, an unnecessary portion of the lead frame is removed by cutting to obtain a bridge type semiconductor device. Then, the terminal portions 17 arranged at both ends
The L-shaped parts A and B formed in advance on a part of the a and 17b are bent at substantially right angles (in the direction of the arrow) from the inside. The resin portion of this bridge type semiconductor device is about 20 mm in width and about 20 mm in height.
mm, thickness about 4mm, terminal part about 5m thick
m, the spacing is approximately 5.5 mm. In FIG. 2, reference numerals 11a and 11b denote bent portions obtained by bending a part of the die pad portion in a substantially right angle direction. (4)

【0008】図3は複数個の装置を同時に形成するため
の本発明の実施例を示す正面図でリードフレーム13に
予めブリッジ回路ユニットを同時に樹脂モールドしてユ
ニット1a〜1d,2a〜2dを形成し、不要部切断し
て個々に分離すると共に図示しない移送手段により個々
に移送し夫々ユニットのL字状部を略直角方向に折曲げ
加工する。
FIG. 3 is a front view showing an embodiment of the present invention for simultaneously forming a plurality of devices. A bridge circuit unit is simultaneously resin-molded in advance on a lead frame 13 to form units 1a to 1d and 2a to 2d. Then, unnecessary portions are cut and separated individually, and individually transferred by a transfer means (not shown), and the L-shaped portions of the units are bent at substantially right angles.

【0009】[0009]

【発明の効果】端子間隔を広くできるので、各種安全規
格を満足する小型で生産性の高いブリッジ型半導体装置
を提供できる。半導体チップからの発熱を効率的に放熱
することができる。
Since the terminal interval can be widened, it is possible to provide a small and highly productive bridge type semiconductor device satisfying various safety standards. Heat generated from the semiconductor chip can be efficiently dissipated.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施例を示す斜視図。FIG. 1 is a perspective view showing an embodiment of the present invention.

【図2】 本発明実施例の説明図。FIG. 2 is an explanatory view of an embodiment of the present invention.

【図3】 本発明の実施例を示す正面図。FIG. 3 is a front view showing the embodiment of the present invention.

【図4】 従来例。FIG. 4 shows a conventional example.

【符号の説明】[Explanation of symbols]

1,半導体装置 1a〜1d,2a〜2d,単位ユニット 11,ダイパット部 11a,11b,折曲げ部 12,12a,12b,端子部 13,リードフレーム 14,半導体チップ 15,樹脂部 16,接続子 17,17a,17b,端子部 1, semiconductor device 1a-1d, 2a-2d, unit unit 11, die pad parts 11a, 11b, bent parts 12, 12a, 12b, terminal part 13, lead frame 14, semiconductor chip 15, resin part 16, connector 17 , 17a, 17b, terminal

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップを配置するダイパット部と
実装時に使用する端子部を有するリードフレームを用い
て、交流入力(又は直流出力)用の第1及び第2端子を
両端に配置し、その内側に直流出力(又は交流入力)用
の第3及び第4端子を配置し、各端子の延長上にダイパ
ット部を有し、そのダイパット部にブリッジ回路に半導
体チップを接続した、ブリッジ型半導体装置に於いて、
前記第1及び第2端子の一部を略直角方向に折曲げてい
ることを特徴とするブリッジ型半導体装置。
A first terminal and a second terminal for AC input (or DC output) are disposed at both ends by using a lead frame having a die pad portion on which a semiconductor chip is disposed and a terminal portion used at the time of mounting. In the bridge type semiconductor device, a third terminal and a fourth terminal for DC output (or AC input) are arranged, and a die pad portion is provided on an extension of each terminal, and a semiconductor chip is connected to a bridge circuit at the die pad portion. In
A bridge-type semiconductor device, wherein a part of the first and second terminals is bent in a substantially right-angle direction.
【請求項2】 両端に配置される第1、第2端子又は第
3、第4の端子の夫々一端をL字状に形成し、前記L字
状部を略直角方向に折曲げたことを特徴とする請求項1
記載のブリッジ型半導体装置。
2. One end of each of the first and second terminals or the third and fourth terminals disposed at both ends is formed in an L-shape, and the L-shaped portion is bent in a substantially right angle direction. Claim 1.
The bridge type semiconductor device as described in the above.
【請求項3】 半導体チップを配置する交流入力(又は
直流出力)用の第1及び第2端子延長上に設けるダイパ
ット部の一部を略直角方向に折曲げ部を有していること
を特徴とする請求項1又は2のブリッジ型半導体装置。
3. A die pad provided on an extension of the first and second terminals for AC input (or DC output) on which a semiconductor chip is disposed has a bent portion in a substantially right angle direction. 3. The bridge-type semiconductor device according to claim 1, wherein:
【請求項4】 複数個のブリッジ型半導体装置を製造す
るためにリードフレームに複数個のブリッジ回路ユニッ
トを形成する工程と、前記夫々ブリッジ回路ユニットを
同時に樹脂モールドする工程と、モールドユニットを個
別に分離するためにリードフレームの不用枠を切断する
工程と、個別ユニットの両端の端子を直角方向に折曲げ
る工程を含むブリッジ型半導体装置の製造方法。
4. A step of forming a plurality of bridge circuit units on a lead frame to manufacture a plurality of bridge type semiconductor devices, a step of simultaneously resin-molding each of the bridge circuit units, and separately forming the mold units. A method of manufacturing a bridge-type semiconductor device, comprising: a step of cutting an unnecessary frame of a lead frame for separation, and a step of bending terminals at both ends of an individual unit at right angles.
JP9287868A 1997-10-03 1997-10-03 Bridge-type semiconductor device and manufacture thereof Pending JPH11111903A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9287868A JPH11111903A (en) 1997-10-03 1997-10-03 Bridge-type semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9287868A JPH11111903A (en) 1997-10-03 1997-10-03 Bridge-type semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH11111903A true JPH11111903A (en) 1999-04-23

Family

ID=17722798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9287868A Pending JPH11111903A (en) 1997-10-03 1997-10-03 Bridge-type semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH11111903A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001192530A (en) * 2000-01-07 2001-07-17 Du Pont Kk Polyacetal resin material for molding, molded article such as slide fastener emitting aroma, and method for producing molded article emitting aroma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001192530A (en) * 2000-01-07 2001-07-17 Du Pont Kk Polyacetal resin material for molding, molded article such as slide fastener emitting aroma, and method for producing molded article emitting aroma

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