JPH11111455A - Manufacture of organic electroluminescent element - Google Patents

Manufacture of organic electroluminescent element

Info

Publication number
JPH11111455A
JPH11111455A JP9284457A JP28445797A JPH11111455A JP H11111455 A JPH11111455 A JP H11111455A JP 9284457 A JP9284457 A JP 9284457A JP 28445797 A JP28445797 A JP 28445797A JP H11111455 A JPH11111455 A JP H11111455A
Authority
JP
Japan
Prior art keywords
electrode
organic
layer
partition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9284457A
Other languages
Japanese (ja)
Inventor
Kenji Furukawa
顕治 古川
Yusho Izumisawa
勇昇 泉澤
Toshihiro Koike
俊弘 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JNC Corp
Original Assignee
Chisso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chisso Corp filed Critical Chisso Corp
Priority to JP9284457A priority Critical patent/JPH11111455A/en
Publication of JPH11111455A publication Critical patent/JPH11111455A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/173Passive-matrix OLED displays comprising banks or shadow masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays

Abstract

PROBLEM TO BE SOLVED: To provide a simply manufacturing method for an organic EL (electroluminescent) element having an electrically insulated second electrode of plural belt-like fine pattern, and allowing no short circuit. SOLUTION: A single layer or plural layers of organic layers 4 and second electrode 5 thereon are formed on the whole face of a substrate 1 having barrier ribs 3 formed thereon composed of first electrode 2 comprising plural formed conductors, and plural insulators formed belt-like on the first electrode 2 so as to be orthogonal to the first electrode 2, and organic material and electrode material on the barrier ribs 3 are separated by this method. In the case of the separation of the electrode material and the like on the barrier ribs 3, individual cutting blades are used for the respective barrier ribs. Thereby, the mutually insulated second electrodes 5 are formed into belt-like so as to manufacture an organic EL element.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、有機エレクトロル
ミネッセント材料からなる有機層を有する有機エレクト
ロルミネッセント素子の製造法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an organic electroluminescent device having an organic layer made of an organic electroluminescent material.

【0002】[0002]

【従来の技術】有機エレクトロルミネッセント(以下、
ELと記す)素子の構成は、基板に支持された、一方が
透明もしくは半透明である一対の電極(陽極と陰極)間
に、発光層を挟持した構成である。具体的には(1)陽
極/発光層/陰極、(2)陽極/正孔輸送層/発光層/
陰極、(3)陽極/発光層/電子輸送層/陰極、(4)
陽極/正孔輸送層/発光層/電子輸送層/陰極などの構
成のものが知られている。必要に応じて、正孔注入輸送
層や電子注入輸送層などを介在させることもある。
2. Description of the Related Art Organic electroluminescent (hereinafter referred to as "organic electroluminescent")
The element has a structure in which a light-emitting layer is sandwiched between a pair of transparent or translucent electrodes (anode and cathode) supported by a substrate. Specifically, (1) anode / light-emitting layer / cathode, (2) anode / hole transport layer / light-emitting layer /
Cathode, (3) anode / light-emitting layer / electron transport layer / cathode, (4)
A configuration having an anode / hole transport layer / light-emitting layer / electron transport layer / cathode is known. If necessary, a hole injection / transport layer or an electron injection / transport layer may be interposed.

【0003】ところで、有機EL素子を高密度の表示素
子として利用するためには、ドット状の微小な画素をマ
トリックス状に配置することが不可欠であり、そのため
には電極の微細なパターン化が必要となる。すなわち、
互いに絶縁された複数の帯状の陽極と陰極を直交するよ
うに配置することにより、前記両電極間に挟まれた部分
が発光領域となり、画素となる。一般的には、発光を取
り出す側に透明電極であるインジウムチンオキシド(以
下、ITOと記す)膜を設置し、陽極とする(以後第一
電極を陽極とし、第二電極を陰極とした場合について記
述する)。その上に、上記したような各種の有機薄膜を
積層し、最後に陰極として仕事関数の低い金属を蒸着
し、有機EL素子としている。
By the way, in order to use an organic EL element as a high-density display element, it is indispensable to arrange minute pixels in the form of a matrix in a matrix. For this purpose, fine patterning of electrodes is required. Becomes That is,
By arranging a plurality of strip-shaped anodes and cathodes that are insulated from each other so as to be orthogonal to each other, a portion sandwiched between the two electrodes serves as a light-emitting region, and becomes a pixel. Generally, an indium tin oxide (hereinafter, referred to as ITO) film, which is a transparent electrode, is provided on the side from which light is emitted, and is used as an anode (hereinafter, the first electrode is used as an anode, and the second electrode is used as a cathode). Describe). On top of this, various organic thin films as described above are stacked, and finally a metal having a low work function is deposited as a cathode to obtain an organic EL device.

【0004】支持基板上に設置されたITO膜は代表的
な微細加工法であるフォトリソグラフィ法により、微細
なパターンを得ることができる。従って、問題となるの
は陰極の微細パターン化である。まず考えられるのは、
電極を蒸着する際にマスクを用いてパターン化するマス
ク蒸着法である。しかしながら、この方法においては、
微細なパターン、特に帯間の間隙が数十μm以下のもの
を作成することは、非常に難しい。すなわち、被蒸着基
板とマスクとの密着性がマスクのだれなどにより十分に
保たれないため、蒸着金属が回り込むことになり、十分
な帯状電極間の絶縁がとれず、陰極の微細パターンを得
ることができないという問題がある。
[0004] A fine pattern can be obtained on the ITO film provided on the supporting substrate by a photolithography method which is a typical fine processing method. Therefore, the problem is the fine patterning of the cathode. First of all,
This is a mask deposition method in which a pattern is formed using a mask when depositing an electrode. However, in this method,
It is very difficult to create a fine pattern, particularly one having a gap between bands of several tens μm or less. That is, the adhesion between the substrate to be deposited and the mask is not sufficiently maintained due to the dripping of the mask, so that the deposited metal wraps around, and sufficient insulation between the strip electrodes cannot be obtained, and a fine pattern of the cathode can be obtained. There is a problem that can not be.

【0005】また、機械的な切削による微細加工法も古
くから知られているが、この方法は強度的にかなり弱い
金属薄膜からなる陰極を加工するには適しておらず、電
極加工精度が不十分なために、電極が取りきれず、ショ
ートしたり、また下地のITOを傷つけ、ITOが断線
する場合があるなどの欠点がある。特開平2−6687
3号公報には、陽極と同様なフォトリソグラフィ法によ
り、微細なパターンを得ることが開示されているが、レ
ジスト塗布、ベーキング、露光、現像、エッチング及び
レジスト剥離などの数多くの工程を必要とし、電極材料
の劣化や有機材料層への水分のしみこみ等の諸問題のた
めに、実用的な有機EL素子は得られない。同様なウェ
ットエッチング法が特開平6−151062号公報にも
開示されている。
[0005] In addition, a fine processing method by mechanical cutting has been known for a long time, but this method is not suitable for processing a cathode composed of a metal thin film having a considerably low strength, and the electrode processing accuracy is poor. Since it is sufficient, there are drawbacks in that the electrode cannot be completely removed, a short circuit occurs, the underlying ITO may be damaged, and the ITO may be disconnected. JP-A-2-6687
No. 3 discloses that a fine pattern is obtained by a photolithography method similar to that of an anode, but requires a number of steps such as resist coating, baking, exposure, development, etching, and resist stripping. Due to various problems such as deterioration of the electrode material and penetration of moisture into the organic material layer, a practical organic EL device cannot be obtained. A similar wet etching method is also disclosed in JP-A-6-151062.

【0006】特開平5−3077号公報には、レーザー
ビームを使用して陰極(第二電極)材料を熱加工して取
り除く方法が開示されている。しかし、陰極は鏡面であ
るため大部分のレーザー光を反射する。したがって、熱
加工するためには強いレーザーを用いる必要があり、従
って加工時に発する熱が多くなり、発光層や他の有機材
料に悪影響を及ぼす。そのため、特開平9−50888
号公報には耐熱性を有するレーザー保護層を設置するこ
とにより熱の影響を弱める工夫がなされているが、熱の
影響を弱める効果が小さく、必ずしも満足のいく方法で
はない。
Japanese Patent Application Laid-Open No. Hei 5-3077 discloses a method of removing a cathode (second electrode) material by thermal processing using a laser beam. However, since the cathode is a mirror surface, it reflects most of the laser light. Therefore, in order to perform thermal processing, it is necessary to use a strong laser. Therefore, heat generated during the processing increases, which adversely affects the light emitting layer and other organic materials. Therefore, Japanese Patent Application Laid-Open No. 9-50888
In Japanese Patent Application Laid-Open Publication No. H10-157, there is a contrivance for weakening the influence of heat by providing a laser protective layer having heat resistance. However, the effect of weakening the influence of heat is small and is not always a satisfactory method.

【0007】特開平8−22371号公報には、レーザ
ーアブレーション法によるパターン化が開示されている
が、飛散する金属屑を遠くにとばすために真空中で操作
を行う必要があり、飛散した金属屑により真空槽が汚れ
るという欠点があり、製造方法としては必ずしも満足の
いくものではない。特開平5−275172号公報に
は、所定の間隔に配置された帯状の透明電極(第一電
極)に直交するように絶縁体からなる隔壁を設け、この
隔壁に直交する方向から陰極(第二電極)材料を斜め蒸
着し、隔壁による陰の部分には電極材料が付着しないよ
うにして、互いに絶縁された帯状の陰電極を設置する方
法が開示されている。しかしこの方法では、隔壁の高さ
をかなり高くしないと十分な絶縁性がとれないという問
題点を有している。
Japanese Patent Application Laid-Open No. Hei 8-22371 discloses a patterning method using a laser ablation method. However, it is necessary to perform an operation in a vacuum in order to blow scattered metal dust away, and the scattered metal dust is required. However, there is a drawback that the vacuum chamber becomes dirty, and the manufacturing method is not always satisfactory. In Japanese Patent Application Laid-Open No. Hei 5-275172, a partition made of an insulator is provided so as to be orthogonal to a strip-shaped transparent electrode (first electrode) arranged at a predetermined interval, and a cathode (second electrode) is arranged in a direction orthogonal to the partition. A method is disclosed in which an electrode) material is obliquely vapor-deposited, and a strip-shaped negative electrode insulated from each other is provided so that the electrode material does not adhere to a shadow of the partition wall. However, this method has a problem that sufficient insulation cannot be obtained unless the height of the partition walls is considerably increased.

【0008】特開平8−315981号公報には、オー
バーハング部を有する隔壁を設け、基板を回転しながら
有機層を蒸着した後、基板回転を止め陰電極(第二電
極)を蒸着すると、隔壁のオーバーハング部の影の部分
には陰電極は蒸着されず、電気的に分離された帯状の陰
電極が形成されるようになると示されている。しかし、
この方法では陰電極の分離は出来るが、影部分に陰電極
材料が回り込み、有機層の積層が十分でない部分で陽電
極(第一電極)とショートするという問題点を有してい
る。
Japanese Patent Application Laid-Open No. 8-315981 discloses a method in which a partition having an overhang portion is provided, an organic layer is deposited while rotating the substrate, and then the rotation of the substrate is stopped to deposit a negative electrode (second electrode). It is shown that the negative electrode is not deposited on the shaded portion of the overhang portion, and an electrically isolated strip-shaped negative electrode is formed. But,
In this method, the cathode can be separated, but there is a problem that the cathode material goes around the shadowed portion and short-circuits with the anode (first electrode) in a portion where the organic layer is not sufficiently laminated.

【0009】特開平8−202287号公報には、特開
平5−275172号公報と同様に、帯状に配置された
透明電極(第一電極)と直交する絶縁体よりなる隔壁を
形成した後、各種有機層と陰電極(第二電極)とを、基
板に対してほぼ垂直方向から基板全面に蒸着し、隔壁上
の陰電極をドクターブレードまたは研磨により除去し
て、隔壁部分で電気的に隔離された帯状の陰電極を得る
ことができる。しかし、研磨により陰電極を削り取る場
合に、研磨時に使用する溶媒が有機層に悪影響を及ぼ
し、また残存する研磨剤により発光ムラが生ずるという
問題点がある。また、ドクターブレードにより陰電極を
削り取る方法では、ブレードと基板との間隔を非常に精
度よく設定しないと発光部分を削り取ったり、削り残り
が生じ、隔壁上の電極材料のみを削り取ることは困難で
ある。また削り屑が基板上に散乱し、ショートや断線の
原因になるという問題点を有している。
Japanese Patent Application Laid-Open No. 8-202287 discloses that, similar to Japanese Patent Application Laid-Open No. 5-275172, after forming a partition wall made of an insulator orthogonal to a transparent electrode (first electrode) arranged in a band shape, An organic layer and a negative electrode (second electrode) are vapor-deposited on the entire surface of the substrate from a direction substantially perpendicular to the substrate, and the negative electrode on the partition is removed by a doctor blade or polishing to be electrically isolated at the partition. Thus, a strip-shaped negative electrode can be obtained. However, when the negative electrode is scraped off by polishing, there is a problem that the solvent used at the time of polishing has an adverse effect on the organic layer, and the remaining polishing agent causes uneven emission. Also, in the method of scraping the negative electrode with a doctor blade, if the distance between the blade and the substrate is not set very accurately, the light emitting portion is scraped or uncut, and it is difficult to scrape only the electrode material on the partition walls. . Further, there is a problem that shavings are scattered on the substrate, which causes a short circuit or disconnection.

【0010】[0010]

【発明が解決しようとする課題】本発明は、このような
従来の有機EL素子のパターン化法が持つ問題点を改良
し、電気的に絶縁した複数本の帯状の微細なパターンの
第二電極を有し、ショートのない有機EL素子を製造す
る方法を提供することを目的としている。
SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the conventional patterning method of an organic EL device, and comprises a plurality of electrically insulated second electrodes having a strip-like fine pattern. It is an object of the present invention to provide a method for manufacturing an organic EL device having no short circuit.

【0011】[0011]

【課題を解決するための手段】上記課題を解決するため
に、本発明は、基板上に複数本形成されている電導体か
らなる第一電極層と、該第一電極上に該第一電極と直交
するよう帯状に複数本形成されている絶縁体からなる隔
壁が構成された基板上に、単層もしくは複数層の有機層
およびその上に電極層を全面に形成して、隔壁の上部分
にそれぞれ存在する有機層材料および電極層材料を剥離
する方法であって、隔壁上の電極材料を剥離する際に、
各隔壁毎に個別の切削用刃を用いて剥離することによ
り、互いに絶縁された第二電極を帯状に形成する有機E
L素子の製造方法である。
In order to solve the above-mentioned problems, the present invention provides a first electrode layer comprising a plurality of conductors formed on a substrate, and a first electrode layer formed on the first electrode. A single layer or a plurality of organic layers and an electrode layer formed thereon are formed over the entire surface of the substrate on which a plurality of strips made of an insulator are formed in a strip shape so as to be orthogonal to the upper part of the partition. It is a method of peeling the organic layer material and the electrode layer material respectively present, when peeling the electrode material on the partition wall,
Organic E which forms second electrodes insulated from each other in a strip shape by peeling using individual cutting blades for each partition.
This is a method for manufacturing an L element.

【0012】本発明の有機EL素子は、基板に支持され
ていることが好ましい。該基板については特に制限はな
く、従来有機EL素子に慣用されているもの、例えばガ
ラス、透明プラスチック、石英などを用いることができ
る。本発明の有機EL素子の電極および有機層構成は、
(1)陽極/発光層/陰極、(2)陽極/正孔輸送層/
発光層/陰極、(3)陽極/発光層/電子輸送層/陰
極、(4)陽極/正孔輸送層/発光層/電子輸送層/陰
極など通常使用される構成であればいかなる構成でもか
まわない。本発明の有機材料とは、有機層に用いる材料
の総称である。発光層は、発光材料を含有した層をい
い、発光層および他の目的のために陽極と陰極の間に積
層する層を一括して有機層という。本発明の有機EL素
子の電極は、前記の第一電極が陽極の場合は第二電極が
陰極となり、第一電極が陰極の場合は第二電極は陽極に
なる。
The organic EL device of the present invention is preferably supported on a substrate. The substrate is not particularly limited, and those conventionally used in organic EL devices, such as glass, transparent plastic, and quartz, can be used. The electrode and the organic layer configuration of the organic EL device of the present invention include:
(1) anode / light-emitting layer / cathode, (2) anode / hole transport layer /
Any structure such as (3) anode / light emitting layer / electron transporting layer / cathode, (4) anode / hole transporting layer / light emitting layer / electron transporting layer / cathode, etc., which is usually used, may be used. Absent. The organic material of the present invention is a general term for materials used for the organic layer. The light-emitting layer refers to a layer containing a light-emitting material. The light-emitting layer and a layer laminated between an anode and a cathode for other purposes are collectively referred to as an organic layer. In the electrode of the organic EL device of the present invention, when the first electrode is an anode, the second electrode is a cathode, and when the first electrode is a cathode, the second electrode is an anode.

【0013】次に、本発明の有機EL素子を製造する好
適な方法について説明する。例として、前記(1)の陽
極/発光層/陰極からなり、陽極を第一電極、陰極を第
二電極とした有機EL素子の製造法について説明する
と、まずガラスなどの透明な基板上に、第一電極用物質
からなる薄膜を、1μm以下、好ましくは100〜80
0nmの範囲の膜厚になるように、蒸着やスパッタリン
グなどの方法により形成させ、第一電極を作製する。電
極材料としては、ITO,ZnO,CuSなどの無機系
材料あるいは有機系透明導電性材料が用いられる。この
透明電極のパターン化は、リソグラフィーなどの慣用的
な微細加工により行われる。
Next, a preferred method for producing the organic EL device of the present invention will be described. As an example, a method for manufacturing an organic EL device comprising the anode / light-emitting layer / cathode of (1) above, in which the anode is the first electrode and the cathode is the second electrode, will be described. First, on a transparent substrate such as glass, The thin film made of the first electrode material is 1 μm or less, preferably 100 to 80 μm.
The first electrode is formed so as to have a thickness of 0 nm by a method such as vapor deposition or sputtering. As the electrode material, an inorganic material such as ITO, ZnO, or CuS or an organic transparent conductive material is used. The patterning of the transparent electrode is performed by conventional fine processing such as lithography.

【0014】この帯状に陽極が形成された基板上に交差
するように帯状の絶縁性隔壁を形成する。隔壁は、スク
リーン印刷法、光反応性樹脂を用いたフォトリソグラフ
ィー法、マスク蒸着法等で形成することができる。隔壁
の材料としては、フォトレジストなどの有機系高分子材
料やSiOxなどの無機系材料が用いられる。次いで帯
状の第一電極極と隔壁を形成させた基板上に有機層を設
ける。有機層の形成方法としては、例えば、スピンコー
ト法や蒸着法などが知られており、以下にその方法につ
いて記す。
A strip-shaped insulating partition is formed so as to intersect on the substrate on which the strip-shaped anode is formed. The partition can be formed by a screen printing method, a photolithography method using a photoreactive resin, a mask evaporation method, or the like. As a material of the partition wall, an inorganic material such as an organic polymer material or SiO x such as a photoresist is used. Next, an organic layer is provided on the substrate on which the strip-shaped first electrode and the partition are formed. As a method of forming the organic layer, for example, a spin coating method, a vapor deposition method, and the like are known, and the methods will be described below.

【0015】蒸着法を採用する場合、その蒸着条件は、
使用する発光層に用いる有機化合物の種類などにより異
なるが、一般にボート加熱温度50〜400℃、真空度
10-5〜10-3Pa、蒸着速度0.01〜50nm/
秒、基板温度−50〜+300℃、膜厚5nmないし5
μmの範囲で適宜選ぶ事が望ましい。スピンコート法を
採用する場合、その条件は、使用する材料の種類、溶媒
の種類などにより異なるが、一般に溶液濃度0.001
〜90重量部、スピンナー回転数100〜100000
回転/分、基板温度−50〜300℃、これらの条件に
より膜厚を5nmないし5μmの範囲になる様に調整す
ることが望ましい。さらに、スピンコート後、窒素、ア
ルゴンなどの不活性気体雰因気下、30〜400℃で1
0分〜24時間熱処理を施すことが望ましい。
When the vapor deposition method is adopted, the vapor deposition conditions are as follows:
Generally, the boat heating temperature is 50 to 400 ° C., the degree of vacuum is 10 −5 to 10 −3 Pa, and the deposition rate is 0.01 to 50 nm /, although it varies depending on the kind of the organic compound used for the light emitting layer to be used.
Seconds, substrate temperature -50 to + 300 ° C, film thickness 5 nm to 5
It is desirable to select an appropriate value in the range of μm. In the case of employing the spin coating method, the conditions vary depending on the type of the material to be used, the type of the solvent, and the like.
~ 90 parts by weight, spinner rotation speed 100 ~ 100,000
It is desirable to adjust the film thickness to be in the range of 5 nm to 5 μm by the conditions of rotation / minute, substrate temperature of −50 to 300 ° C., and these conditions. Further, after spin coating, the solution is heated at 30 to 400 ° C. for 1 hour in an atmosphere of an inert gas such as nitrogen or argon.
It is desirable to perform heat treatment for 0 minute to 24 hours.

【0016】この発光層の形成後、その上に第二電極用
物質からなる薄膜を、1μm以下の厚さに、例えば蒸着
やスパッタリング等の方法により形成させ、有機層全面
に第二電極層を設ける。第二電極層を形成した後の有機
EL素子の断面図を図1及び図2に示す。図1はITO
電極に沿った方向の断面図である。図2はITO電極に
対して直交方向の断面図である。図では、ITO電極が
第一電極であり、金属電極が第二電極である。
After the formation of the light emitting layer, a thin film made of a substance for a second electrode is formed thereon to a thickness of 1 μm or less by, for example, a method such as vapor deposition or sputtering. Provide. FIGS. 1 and 2 are cross-sectional views of the organic EL device after the formation of the second electrode layer. Figure 1 is ITO
It is sectional drawing of the direction along the electrode. FIG. 2 is a cross-sectional view in a direction orthogonal to the ITO electrodes. In the figure, the ITO electrode is the first electrode and the metal electrode is the second electrode.

【0017】本発明では、隔壁上の第二電極材料を削り
取ることにより、互いに電気的に絶縁された帯状第二電
極を形成する。隔壁上に積層される有機層及び第二電極
層の厚さは共に1μm以下、通常0.1〜0.5μmで
非常に薄いものである。基板にガラス板などの平板を用
いる場合、基板の大きさ、製造方法、材質等に依存する
が、0.5μm程度のうねりやそりがある。そのためド
クターブレードなどの一枚刃では前述したように削り残
しや削り過ぎなどの問題を生ずる。この問題を回避する
ためには、削り取るべき隔壁上にのみ刃が当たるように
小さな刃を列の数だけ設置することが必要となり、櫛状
の切削用具を使用することが好ましい。通常画素の大き
さは0.1×0.1mm以上であり、画素の間隔(隔壁
間隙)は10μm以上である。櫛状刃の間隔は画素の大
きさの間隔に設置し、刃の幅は1μm以上であることが
望ましい。ここで削り取る層は隔壁上の第二電極材料だ
けでも構わない。
In the present invention, a strip-shaped second electrode that is electrically insulated from each other is formed by scraping off the second electrode material on the partition walls. The thickness of both the organic layer and the second electrode layer laminated on the partition walls is 1 μm or less, usually 0.1 to 0.5 μm, which is very thin. When a flat plate such as a glass plate is used as the substrate, there is undulation or warpage of about 0.5 μm, depending on the size, manufacturing method, material and the like of the substrate. Therefore, a single blade such as a doctor blade causes a problem such as uncut or excessively cut as described above. In order to avoid this problem, it is necessary to install small blades in the number of rows so that the blades only hit the partition walls to be cut, and it is preferable to use a comb-shaped cutting tool. Normally, the size of the pixel is 0.1 × 0.1 mm or more, and the distance between the pixels (partition gap) is 10 μm or more. It is preferable that the interval between the comb-shaped blades is set to be equal to the size of the pixel, and the width of the blade is 1 μm or more. Here, the layer to be removed may be only the second electrode material on the partition.

【0018】また、隔壁上の第二電極材料はすべて取り
除く必要はなく、隔壁の幅よりも小さくして溝を形成す
るように削り取るだけでも差し支えない。この櫛状切削
用具は種々の方法で作ることが可能であるが、たとえ
ば、平板に画素ピッチにあわせて穴もしくはくぼみを付
け、そこに小さな切削用刃を固定する方法や所望の厚さ
のステンレス板をエッチングすることにより所望のピッ
チと幅の櫛状刃を得ることができる。
Further, it is not necessary to remove all of the second electrode material on the partition walls, but it is sufficient to make the second electrode material smaller than the width of the partition walls so as to form a groove. This comb-shaped cutting tool can be made by various methods.For example, a method of fixing a small cutting blade to a flat plate with holes or depressions in accordance with the pixel pitch, or a stainless steel having a desired thickness is used. By etching the plate, a comb-like blade having a desired pitch and width can be obtained.

【0019】有機材料と電極材料との間、および有機材
料と隔壁との間の密着力は共に小さいので簡単に削り取
ることができるので、刃先は鋭利であることが望ましい
が、刃先が丸くなっていなければよい。図2からわかる
ように、ITO膜のある部分とない部分では除去すべき
層の高さがITOの厚さ分だけ異なるので、櫛状刃は隔
壁の凹凸に追随するように弾性が必要である。この櫛状
刃を隔壁上を有機層および第二電極層を削り取るように
走査することにより、帯状の第二電極を得ることが出来
る。図3に隔壁上の第二電極材料を除去した様子をIT
O電極に沿った方向の断面図で示す。しかし、前述した
ようにこのままでは削り屑が有機EL素子上に散乱する
ことになり、ショートの原因となったり、傷を付け断線
の原因となるなどの悪影響がある。
Since the adhesive force between the organic material and the electrode material and between the organic material and the partition walls are both small, they can be easily scraped off. Therefore, it is desirable that the cutting edge is sharp, but the cutting edge is rounded. Good if not. As can be seen from FIG. 2, since the height of the layer to be removed differs between the portion with and without the ITO film by the thickness of the ITO, the comb-like blade needs elasticity so as to follow the unevenness of the partition wall. . By scanning the comb-like blade on the partition wall so as to scrape off the organic layer and the second electrode layer, a strip-shaped second electrode can be obtained. FIG. 3 shows a state in which the second electrode material on the partition is removed by IT.
It is shown in a sectional view in the direction along the O electrode. However, as described above, shavings are scattered on the organic EL element as it is as described above, which has an adverse effect such as causing a short circuit or causing damage and disconnection.

【0020】そこで、窒素やアルゴンなどの不活性ガス
を吹き付けて削り屑を吹き飛ばし、吹き飛ばした削り屑
を、真空吸引により吸い取ってしまう方法を用いるとよ
い。その一例を図4に示す。切削用刃の前方から不活性
ガスを吹き付け、第二電極材料削った時に生ずる削り屑
を吹き飛ばし、それを後方で真空吸引して吸い取ること
により、有機EL素子上の削り屑を残さないようにする
ことが出来る。不活性ガスの吹き付けと真空吸引とのど
ちらか一方の方法でも有機EL素子上に削り屑を残すこ
とはないが、併用することが好ましい。なお、本発明の
有機薄膜EL素子の製造においては、作製順序を逆にし
て、陰極、発光層、陽極の順に作製し、隔壁上の陽極を
削り取って製造することも可能である。
Therefore, it is preferable to use a method in which an inert gas such as nitrogen or argon is blown to blow off shavings, and the blown shavings are sucked off by vacuum suction. An example is shown in FIG. An inert gas is blown from the front of the cutting blade to blow off shavings generated when the second electrode material is shaved, and the vacuum is sucked and sucked at the rear to prevent shavings on the organic EL element from being left. I can do it. There is no shavings left on the organic EL element by either of the inert gas blowing and vacuum suction methods, but it is preferable to use them together. In the production of the organic thin film EL device of the present invention, it is also possible to reverse the production order, produce the cathode, the light emitting layer, and the anode in this order, and scrape off the anode on the partition walls.

【0021】本発明の製造法において、上記の切削は、
隔壁上の第二電極材料だけを剥離することについて説明
したが、隔壁上の第二電極材料を切削する際に、隔壁上
の有機材料が剥がれたとしても各画素部分には影響を与
えないので、本発明の有機EL素子を製造するにはなん
ら問題はない。本発明の方法によって製造された有機E
L素子の陽極、有機層、陰極に対して、大気中の酸素、
湿気、ゴミなどによる劣化を防止するために、陽極、有
機層、陰極部分全体を封止することが望ましい。
In the manufacturing method of the present invention, the cutting is performed by:
Although it has been described that only the second electrode material on the partition is peeled off, when cutting the second electrode material on the partition, even if the organic material on the partition is peeled off, it does not affect each pixel portion. There is no problem in manufacturing the organic EL device of the present invention. Organic E prepared by the method of the present invention
Oxygen in the air for the anode, organic layer, and cathode of the L element,
In order to prevent deterioration due to moisture, dust, etc., it is desirable to seal the entire anode, organic layer, and cathode portion.

【0022】本発明の製造法で得られた有機EL素子
は、有機層を介して、第一電極と第二電極が帯状に形成
されている。これより、第一電極と第二電極とでマトリ
クスが形成され、第一電極駆動回路と第二電極駆動回路
により、このマトリクスで構成される画素が順次駆動す
ることにより、画素部分の発光層が画像信号に基づいて
順次発光制御されるようになる。
In the organic EL device obtained by the manufacturing method of the present invention, the first electrode and the second electrode are formed in a band shape via the organic layer. Thus, a matrix is formed by the first electrode and the second electrode, and the first electrode driving circuit and the second electrode driving circuit sequentially drive the pixels formed by this matrix, so that the light emitting layer of the pixel portion is formed. Light emission is sequentially controlled based on the image signal.

【0023】[0023]

【作用】本発明の製造方法によれば、電極間隙狭い帯状
の第二電極を精密に加工することになり、電極間のショ
ートを回避できるので、本発明によって製造する有機E
L素子の表示品位は高いものとなる。
According to the manufacturing method of the present invention, the strip-shaped second electrode having a narrow electrode gap is precisely machined, and a short circuit between the electrodes can be avoided.
The display quality of the L element is high.

【0024】[0024]

【実施例】次に本発明を実施例に基づいて更に詳しく説
明するが、本発明は実施例に限定されるものではない。
Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to the examples.

【0025】実施例1 帯状にITO(第一電極)が幅100μmでその間隙が
30μmであるようにパターンニングされたガラス基板
を十分洗浄し、ヘキスト製レジストAZ TFP−Nを
スピンコートした。次に、ホットプレート上にてプリベ
ークを行った。プリベークを施したレジスト上に、幅3
0μmの帯状にレジストの隔壁が出来るように加工した
フォトマスクを乗せて露光を行った。露光した基板を現
像液の中に入れ、レジストの現像を行い、基板をホット
プレート上に置きポストベークを施し、所望の帯状IT
Oと交差する帯状の高さ3μmの隔壁を形成した基板を
作製した。
Example 1 A glass substrate patterned so that ITO (first electrode) was 100 μm in width and the gap was 30 μm in a belt shape was sufficiently washed, and a Hoechst resist AZ TFP-N was spin-coated. Next, prebaking was performed on a hot plate. Width 3 on pre-baked resist
Exposure was performed with a photomask processed so as to form a resist partition in a 0 μm band shape. The exposed substrate is placed in a developing solution, the resist is developed, the substrate is placed on a hot plate, post-baked, and a desired band-shaped IT
A substrate on which a strip-shaped partition having a height of 3 μm crossing O was formed.

【0026】この基板を市販の蒸着装置の基板ホルダー
に固定し、N,N'-シ゛フェニル-N,N'-ヒ゛ス-(3-メチルフェニル)-4,4'-シ゛
アミンを8×10-4Paの真空度で蒸着速度0.1〜0.
2nm/秒で石英製るつぼから基板上に蒸着して、膜厚
50nmの正孔注入輸送層を製膜させた。つづいて、8
×10-4Paの真空度でトリス(8-ヒト゛ロキシキノリノ)アルミニウムを石
英製るつぼから0.3〜0.4nm/秒で共蒸着法によ
り膜厚50nmの発光層を正孔注入輸送層上に製膜させ
た。ついで、その上に陰極電極として1×10-3Paの
真空度でマグネシウムをグラファイト製るつぼから蒸着
速度1〜1.2nm/秒および銀をグラファイト製るつ
ぼから蒸着速度0.08〜0.11nm/秒で150n
mの厚さでマグネシウム−銀電極(第二電極)を共蒸着
して作成した。130μm間隔に先端が5μmの切削用
針を取り付けた櫛状平板を作り、針を隔壁の中央部に押
し当て、素子上を走査した。隔壁上に5μm幅の第二電
極材料を削り取った跡ができ、各画素にITOを陽極に
して直流電圧を印加すると、直流電圧を印加した画素の
みが発光し、各画素間が短絡していないことが確認でき
た。
This substrate was fixed on a substrate holder of a commercially available vapor deposition apparatus, and N, N′-diphenyl-N, N′-bis- (3-methylphenyl) -4,4′-diamine was added to 8 × 10 −4. At a degree of vacuum of Pa, the deposition rate is 0.1-0.
A hole injection / transport layer having a thickness of 50 nm was formed by vapor deposition from a quartz crucible on a substrate at a rate of 2 nm / sec. Next, 8
Tris (8-human peroxyquinolino) aluminum was deposited from a quartz crucible at a vacuum of × 10 -4 Pa at a rate of 0.3 to 0.4 nm / sec. Was formed. Then, as a cathode electrode, magnesium was vapor-deposited from a graphite crucible at a degree of vacuum of 1 × 10 −3 Pa at a rate of 1 to 1.2 nm / sec and silver was vapor-deposited from a graphite crucible at a rate of 0.08 to 0.11 nm / sec. 150n in seconds
It was prepared by co-evaporating a magnesium-silver electrode (second electrode) with a thickness of m. A comb-shaped flat plate having cutting needles each having a tip of 5 μm was attached at an interval of 130 μm, and the needle was pressed against the center of the partition wall to scan over the element. Traces of 5 μm width of the second electrode material are formed on the partition walls, and when a DC voltage is applied to each pixel using ITO as an anode, only the pixel to which the DC voltage is applied emits light, and each pixel is not short-circuited. That was confirmed.

【0027】実施例2 厚さ100μmのステンレス板フォトリソ法により、幅
50μm中心間隔が130μmの櫛状刃を作製し実施例
1と同様に隔壁上を走査した。隔壁上の有機層と第二電
極層が削り取れた。この素子の各画素にITOを陽極に
して直流電圧を印加すると、直流電圧を印加した画素の
みが発光し、各画素間が短絡していないことが確認でき
た。
Example 2 A comb-shaped blade having a width of 50 μm and a center interval of 130 μm was prepared by a 100 μm-thick stainless steel plate photolithography method, and scanning was performed on the partition walls in the same manner as in Example 1. The organic layer and the second electrode layer on the partition were scraped off. When a DC voltage was applied to each pixel of the device using ITO as an anode, only the pixel to which the DC voltage was applied emitted light, and it was confirmed that each pixel was not short-circuited.

【0028】実施例3 実施例2と同様にして作製した櫛状刃の不活性吹き付け
用治具および真空吸引治具を取り付け、実施例1と同様
に隔壁上を走査した。隔壁上の有機層および第二電極層
を削り取り、帯状の第二電極を形成できた。この素子の
各画素にITOを陽極にして直流電圧を印加すると、直
流電圧を印加した画素のみが発光し、各画素間が短絡し
ていないことが確認できた。
Example 3 An inert spraying jig and a vacuum suction jig of a comb-shaped blade produced in the same manner as in Example 2 were attached, and the partition walls were scanned as in Example 1. The organic layer and the second electrode layer on the partition were scraped off to form a strip-shaped second electrode. When a DC voltage was applied to each pixel of the device using ITO as an anode, only the pixel to which the DC voltage was applied emitted light, and it was confirmed that each pixel was not short-circuited.

【0029】比較例1 隔壁を設置しないことを除いて実施例1と同様に素子を
作製した。実施例1に示した櫛状刃を帯状ITO電極と
直交するように走査した。この走査を施す前の各画素間
の抵抗値が20Ωであったものが、切削後の抵抗値は2
00KΩとなり、十分な絶縁を持たなかった。このこと
は、完全に第二電極材料が削り取れなかったことを示し
ている。
Comparative Example 1 An element was produced in the same manner as in Example 1 except that no partition was provided. The comb-shaped blade shown in Example 1 was scanned so as to be orthogonal to the strip-shaped ITO electrode. The resistance value between each pixel before performing this scanning was 20Ω, but the resistance value after cutting was 2Ω.
00KΩ, and did not have sufficient insulation. This indicates that the second electrode material was not completely removed.

【0030】[0030]

【発明の効果】以上説明したように、本発明の製造方法
により得られる有機EL素子は、ディスプレイ用発光素
子としてきわめて有用であり、その製造方法の工業的価
値は高い。
As described above, the organic EL device obtained by the manufacturing method of the present invention is extremely useful as a light emitting device for a display, and the manufacturing method has high industrial value.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 全面に金属蒸着を施した有機EL素子の構成
の一例で、ITO電極に沿った方向の断面図である。
FIG. 1 is an example of a configuration of an organic EL element in which metal deposition is performed on the entire surface, and is a cross-sectional view along a direction along an ITO electrode.

【図2】 全面に金属蒸着を施した有機EL素子の構成
の一例で、ITO電極に直交方向の断面図である。
FIG. 2 is a cross-sectional view of an example of a configuration of an organic EL element in which metal deposition is performed on the entire surface, in a direction orthogonal to an ITO electrode.

【図3】 本発明の製造方法により、金属電極に微細加
工を施した有機EL素子のITO電極に沿った方向の断
面である。
FIG. 3 is a cross-sectional view along a direction along an ITO electrode of an organic EL element obtained by subjecting a metal electrode to fine processing by the manufacturing method of the present invention.

【図4】 本発明の製造方法により、金属電極に微細加
工を施した際における、ITO電極に直交方向、かつ隔
壁の上部分の断面の模式図である。
FIG. 4 is a schematic diagram of a cross section of an upper part of a partition wall in a direction orthogonal to an ITO electrode when a fine processing is performed on a metal electrode by a manufacturing method of the present invention.

【符号の説明】[Explanation of symbols]

1.ガラス基板(基板) 2.ITO電極(第一電極) 3.隔壁 4.有機化合物層(有機層) 5.金属電極(第二電極) 6.櫛状刃 7.不活性ガス吹き出し 8.真空吸入口 9.不活性ガス 1. 1. Glass substrate (substrate) 2. ITO electrode (first electrode) Partition wall 4. 4. Organic compound layer (organic layer) 5. Metal electrode (second electrode) Comb blade 7. 7. Inert gas blowing Vacuum inlet 9. Inert gas

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 互いに対向する複数本の帯状に配置され
た第一電極と第二電極の電極対と該電極対間に有機層を
有し、該電極対に挟まれた複数の部分を発光領域とする
エレクトロルミネッセント素子の製造法において、複数
本の帯状の第一電極と該電極と直交するように絶縁体か
らなる複数本の帯状隔壁を配置した基板上に、単層もし
くは複数層の有機層ついで素子全面に第二電極層を形成
した後、該隔壁の上部分にそれぞれ存在する有機材料お
よび第二電極材料を削り取ることにより、帯状の第二電
極を形成する工程を含むことを特徴とする有機エレクト
ロルミネッセント素子の製造法。
1. An electrode pair of a first electrode and a second electrode arranged in a plurality of strips facing each other and an organic layer interposed between the electrode pairs, and a plurality of portions sandwiched between the electrode pairs emit light. In the method of manufacturing an electroluminescent element as a region, a single layer or a plurality of layers are formed on a substrate on which a plurality of strip-shaped first electrodes and a plurality of strip-shaped partition walls made of an insulator are arranged so as to be orthogonal to the electrodes. Forming a second electrode layer on the entire surface of the device and then shaving off the organic material and the second electrode material respectively present on the upper part of the partition walls to form a band-shaped second electrode. A method for producing an organic electroluminescent device.
【請求項2】 第二電極層を素子全面に形成させた後、
請求項1の隔壁の上部分にそれぞれ存在する有機材料お
よび第二電極材料を、金属もしくはプラスチックからな
る切削用刃もしくは針を用いて削り取る工程を含むこと
を特徴とする有機エレクトロルミネッセント素子の製造
方法。
2. After forming a second electrode layer on the entire surface of the device,
2. The organic electroluminescent device according to claim 1, further comprising a step of shaving off the organic material and the second electrode material respectively present on the upper portion of the partition wall using a cutting blade or a needle made of metal or plastic. Production method.
【請求項3】 請求項2において、有機材料および第二
電極材料を削り取る際にでる切削屑を真空吸引して、隔
壁上の有機材料および第二電極材料を剥離する工程を含
むことを特徴とする有機エレクトロルミネッセント素子
の製造方法。
3. The method according to claim 2, further comprising a step of vacuum-suctioning cutting chips generated when the organic material and the second electrode material are scraped off to peel off the organic material and the second electrode material on the partition walls. Of manufacturing an organic electroluminescent device.
【請求項4】 請求項2において、有機材料および第二
電極材料を削り取る際にでる切削屑を気体で吹き飛ば
し、該切削屑を真空吸引して、隔壁上の有機材料および
第二電極材料を剥離する工程を含むことを特徴とする有
機エレクトロルミネッセント素子の製造方法。
4. The organic material and the second electrode material on the partition wall according to claim 2, wherein chips generated when shaving the organic material and the second electrode material are blown off with a gas, and the chips are vacuumed to separate the organic material and the second electrode material on the partition walls. A method for manufacturing an organic electroluminescent device, comprising the steps of:
JP9284457A 1997-10-01 1997-10-01 Manufacture of organic electroluminescent element Pending JPH11111455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9284457A JPH11111455A (en) 1997-10-01 1997-10-01 Manufacture of organic electroluminescent element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9284457A JPH11111455A (en) 1997-10-01 1997-10-01 Manufacture of organic electroluminescent element

Publications (1)

Publication Number Publication Date
JPH11111455A true JPH11111455A (en) 1999-04-23

Family

ID=17678791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9284457A Pending JPH11111455A (en) 1997-10-01 1997-10-01 Manufacture of organic electroluminescent element

Country Status (1)

Country Link
JP (1) JPH11111455A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1260958A3 (en) * 2001-05-04 2004-06-09 LG Electronics, Inc. Scan structure in display device, method for driving the display device, and method for manufacturing the same
JP2004171943A (en) * 2002-11-20 2004-06-17 Semiconductor Energy Lab Co Ltd Manufacturing method of light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1260958A3 (en) * 2001-05-04 2004-06-09 LG Electronics, Inc. Scan structure in display device, method for driving the display device, and method for manufacturing the same
US7068265B2 (en) 2001-05-04 2006-06-27 Lg Electronics Inc. Scan structure in display device, method for driving the display device, and method for manufacturing the same
JP2004171943A (en) * 2002-11-20 2004-06-17 Semiconductor Energy Lab Co Ltd Manufacturing method of light emitting device

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