JPH053077A - Manufacture of electroluminescence element - Google Patents
Manufacture of electroluminescence elementInfo
- Publication number
- JPH053077A JPH053077A JP3154933A JP15493391A JPH053077A JP H053077 A JPH053077 A JP H053077A JP 3154933 A JP3154933 A JP 3154933A JP 15493391 A JP15493391 A JP 15493391A JP H053077 A JPH053077 A JP H053077A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming step
- electrode
- electrode material
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000005401 electroluminescence Methods 0.000 title claims description 9
- 239000007772 electrode material Substances 0.000 claims abstract description 37
- 230000005525 hole transport Effects 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 150000002484 inorganic compounds Chemical class 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims 6
- 238000004020 luminiscence type Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 5
- 229910052724 xenon Inorganic materials 0.000 abstract description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 126
- 239000002184 metal Substances 0.000 description 15
- 239000012044 organic layer Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
Abstract
Description
【０００１】[0001]
【技術分野】本発明は、電界の印加によって発光するエ
レクトロルミネッセンス層（以下、ＥＬ層という）を備
えたエレクトロルミネッセンス素子（以下、ＥＬ素子と
いう）の製造方法に関する。TECHNICAL FIELD The present invention relates to a method for manufacturing an electroluminescence element (hereinafter referred to as an EL element) including an electroluminescence layer (hereinafter referred to as an EL layer) that emits light when an electric field is applied.
【０００２】[0002]
【背景技術】かかるＥＬ素子は構造で分類すると、電極
とＥＬ層との間に絶縁層又は誘電層をもたない直流形
と、電極とＥＬ層との間に絶縁層をもつ交流形とに分類
されている。また、ＥＬ素子を発光するＥＬ層構造で分
類すると、分散形と、薄膜形とに分けられる。さらにま
た、ＥＬ素子を発光するＥＬ層材質で分類すると、無機
物からなる無機ＥＬ層を有する無機ＥＬ素子と有機物か
らなる有機ＥＬ層を有する有機ＥＬ素子とに分けられ
る。BACKGROUND ART Such EL elements are classified into a direct current type having no insulating layer or a dielectric layer between an electrode and an EL layer, and an alternating current type having an insulating layer between an electrode and an EL layer. It is classified. Further, when the EL elements are classified according to the EL layer structure that emits light, they are classified into a dispersion type and a thin film type. Furthermore, when the EL elements are classified according to the EL layer material that emits light, they are classified into an inorganic EL element having an inorganic EL layer made of an inorganic material and an organic EL element having an organic EL layer made of an organic material.
【０００３】例えば、有機ＥＬ素子には図３及び図４に
示すように、Ｘ，Ｙマトリクス型がある。図４は図３の
Ｉ−Ｉ線の断面図を示す。該有機ＥＬ素子は、ガラス透
明基板１上に、ＩＴＯ等の複数の透明電極２（アノー
ド）、正孔輸送層３、有機ＥＬ層４、透明電極２に交差
する複数の背面電極５（カソード）を順に積層、形成し
たものである。有機有機ＥＬ素子には、図示する正孔輸
送層３及び有機ＥＬ層４からなる２層構造のものや、図
示しないが有機ＥＬ層４及びカソード５間に有機電子輸
送層がさらに配された３層構造のものが知られている。
また、カソード５の上には、通常これを保護し短絡を防
ぐ保護層が被覆されている。For example, as an organic EL element, there is an X, Y matrix type as shown in FIGS. FIG. 4 shows a cross-sectional view taken along the line II of FIG. The organic EL device comprises a plurality of transparent electrodes 2 (anode) such as ITO, a hole transport layer 3, an organic EL layer 4, and a plurality of back electrodes 5 (cathodes) intersecting with the transparent electrode 2 on a glass transparent substrate 1. Are sequentially laminated and formed. The organic-organic EL device has a two-layer structure composed of the hole transport layer 3 and the organic EL layer 4 shown in the figure, and an organic electron transport layer (not shown) further arranged between the organic EL layer 4 and the cathode 5. Layered structures are known.
Further, the cathode 5 is usually covered with a protective layer which protects the cathode 5 and prevents a short circuit.
【０００４】このマトリクス方式の有機ＥＬ素子を作成
する場合、図５に示すように、ＩＴＯ層を一様に担持し
たガラス基板上に複数の平行アノードを整列し配すべ
く、ストライプ状（帯状）のパターンマスクをＩＴＯ層
上に配置してエッチングにより形成する（Ｓ1）。この
アノード上に正孔輸送層、ＥＬ層の有機層を順次積層す
る（Ｓ2）。その後、複数の平行カソードをアノードの
ストライプの伸長方向に対して垂直方向に延在するスト
ライプ状に整列させるために有機層上にパターンマスク
を被せ（Ｓ3）、カソード用の金属を蒸着して（Ｓ4）、
パターンマスクを剥離して（Ｓ5）、ストライプ状のカ
ソードを作成する。When this matrix type organic EL device is produced, as shown in FIG. 5, stripe-shaped (strip-shaped) stripes are arranged in order to arrange a plurality of parallel anodes on a glass substrate on which an ITO layer is uniformly carried. The pattern mask of 1 is placed on the ITO layer and formed by etching (S 1 ). A hole transport layer and an organic layer of an EL layer are sequentially laminated on this anode (S 2 ). Then, a pattern mask is covered on the organic layer to align the plurality of parallel cathodes in a stripe shape extending in a direction perpendicular to the extending direction of the anode stripes (S 3 ), and a metal for the cathode is deposited. (S 4 ),
The pattern mask is peeled off (S 5 ) to form a striped cathode.
【０００５】しかしながら、上記した従来の方法では、
正孔輸送層、ＥＬ層の有機層上にカソードのパターンマ
スクを載置する時、一度真空槽をリークしなければなら
ない手間がある上、パターンマスクの位置合せが困難
で、パターンマスクの位置ずれによる不良や、パターン
マスクの密着不良によるカソード間の短絡等のパターン
不良が発生するという問題点があった。However, in the above-mentioned conventional method,
When the cathode pattern mask is placed on the organic layers of the hole transport layer and the EL layer, it is necessary to leak the vacuum chamber once, and it is difficult to align the pattern mask. However, there is a problem in that a pattern defect such as a short circuit between the cathodes due to a defect due to the above or a pattern mask adhesion defect occurs.
【０００６】[0006]
【発明の目的】本発明は上記問題点に鑑みなされ、本発
明の目的はクロストークの発生の少ないＥＬ素子を簡素
な工程で製造する製造方法を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a manufacturing method for manufacturing an EL element with less crosstalk in a simple process.
【０００７】[0007]
【発明の構成】第１の本発明のＥＬ素子製造方法は、基
板上における互いに対向する複数のカソード電極及びア
ノード電極の電極対と前記電極対間に配置されたＥＬ層
とを有し、前記ＥＬ層の前記電極対によって挾まれる複
数の部分を発光領域とするＥＬ素子の製造方法であっ
て、基板上に第１電極材料層からなる複数の帯状アノー
ド電極を互いに平行に形成するアノード電極形成工程
と、前記アノード電極上にＥＬ層を成膜するＥＬ層形成
工程と、前記ＥＬ層上に第２電極材料層を成膜する第２
電極材料層形成工程と、集光レーザビームの焦点を前記
アノード電極の前記ＥＬ層側境界面から前記第２電極材
料層の外側境界面までに位置させつつ集光レーザビーム
を走査して、少なくとも前記ＥＬ層及び前記２電極材料
層の一部を切削して前記アノード電極と交差する複数の
帯状ＥＬ層及び帯状カソード電極を互いに平行に形成す
るカソード電極形成工程とを含むことを特徴とする。According to a first aspect of the present invention, there is provided an EL device manufacturing method, which comprises a plurality of electrode pairs of a cathode electrode and an anode electrode facing each other on a substrate, and an EL layer arranged between the electrode pairs. A method for manufacturing an EL element, wherein a plurality of portions sandwiched by the electrode pairs of the EL layer are used as light emitting regions, the anode electrode comprising a plurality of strip-shaped anode electrodes made of a first electrode material layer formed on a substrate in parallel with each other. A forming step, an EL layer forming step of forming an EL layer on the anode electrode, and a second forming an second electrode material layer on the EL layer
An electrode material layer forming step, and scanning the focused laser beam while locating the focus of the focused laser beam from the EL layer side boundary surface of the anode electrode to the outer boundary surface of the second electrode material layer, And a cathode electrode forming step of cutting a part of the EL layer and the two-electrode material layer to form a plurality of belt-shaped EL layers and belt-shaped cathode electrodes that intersect with the anode electrodes in parallel with each other.
【０００８】第２の本発明のＥＬ素子製造方法は、基板
上における互いに対向する複数のカソード電極及びアノ
ード電極の電極対と前記電極対間に配置されたＥＬ層と
を有し、前記ＥＬ層の前記電極対によって挾まれる複数
の部分を発光領域とするＥＬ素子の製造方法であって、
基板上に第１電極材料層を成膜する第１電極材料層形成
工程と、前記第１電極材料層上にＥＬ層を成膜するＥＬ
層形成工程と、集光レーザビームの焦点を前記基板の前
記第１電極材料層側境界面から前記ＥＬ層の外側境界面
までに位置させつつ集光レーザビームを走査して、少な
くとも前記ＥＬ層及び前記１電極材料層の一部を切削し
てアノード電極を互いに平行に形成するアノード電極形
成工程と、前記ＥＬ層上に第２電極材料層を成膜する第
２電極材料層形成工程と、集光レーザビームの焦点を前
記アノード電極の前記ＥＬ層側境界面から前記第２電極
材料層の外側境界面までに位置させつつ集光レーザビー
ムを走査して、少なくとも前記ＥＬ層及び前記２電極材
料層の一部を切削して前記アノード電極と交差する複数
の帯状カソード電極を互いに平行に形成するカソード電
極形成工程とを含むことを特徴とする。The EL element manufacturing method of the second aspect of the present invention comprises a plurality of cathode electrode and anode electrode pairs facing each other on a substrate, and an EL layer arranged between the electrode pairs. A method for manufacturing an EL element, wherein a plurality of portions sandwiched by the electrode pairs of
First electrode material layer forming step of forming a first electrode material layer on a substrate, and EL forming an EL layer on the first electrode material layer
A layer forming step and scanning the focused laser beam while positioning the focal point of the focused laser beam from the boundary surface of the substrate on the side of the first electrode material layer to the outer boundary surface of the EL layer, and at least the EL layer. And an anode electrode forming step of cutting a part of the one electrode material layer to form anode electrodes in parallel with each other, and a second electrode material layer forming step of forming a second electrode material layer on the EL layer. The focused laser beam is scanned while the focus of the focused laser beam is positioned from the boundary surface of the anode electrode on the EL layer side to the outer boundary surface of the second electrode material layer, and at least the EL layer and the two electrodes are scanned. A step of cutting a part of the material layer to form a plurality of strip-shaped cathode electrodes that intersect the anode electrodes in parallel with each other.
【０００９】[0009]
【発明の作用】本発明によれば、パターン不良の少ない
ＥＬ素子を簡素な工程で得られる。According to the present invention, an EL element with few pattern defects can be obtained in a simple process.
【００１０】[0010]
【実施例】以下、本発明による実施例を図面を参照しつ
つ説明する。実施例のＥＬ素子製造によって正孔輸送層
を有する二層構造の有機ＥＬ素子を製造する。まず、図
１（ａ）に示すように、ガラス基板１の主面上にＩＴＯ
からなる複数の帯状の透明アノード２を各々が平行とな
るようにスパッタリング法及びリソグラフィ法などによ
って積層する。次に、図１（ｂ）に示すように、複数の
透明電極２上に正孔輸送層３及びＥＬ層４を蒸着法など
によって均一に一様に積層し順に形成する。次に、図１
（ｃ）に示すように、ＥＬ層４上に蒸着法などによって
カソード用金属層５を均一に一様に形成する。最後に、
図１（ｄ）に示すように、キセノンレーザビームカッタ
を用い、正孔輸送層３、ＥＬ層４及び金属層５を、アノ
ード２のＥＬ層側境界面から金属層５の外側境界面まで
に集光レーザビーム６の焦点を一致させつつ走査によっ
てカッティングし、これらを複数の平行溝にて分割する
パターニングを行ないカソード５を各々が平行となるよ
うに形成する。このようにして、有機ＥＬ素子が得られ
る。Embodiments of the present invention will be described below with reference to the drawings. A two-layer organic EL device having a hole transport layer is manufactured by manufacturing the EL device of the example. First, as shown in FIG. 1A, ITO is formed on the main surface of the glass substrate 1.
A plurality of strip-shaped transparent anodes 2 made of is laminated by a sputtering method, a lithographic method, or the like so that the transparent anodes 2 are parallel to each other. Next, as shown in FIG. 1B, the hole transport layer 3 and the EL layer 4 are uniformly and evenly laminated on the plurality of transparent electrodes 2 by a vapor deposition method or the like to sequentially form the layers. Next, FIG.
As shown in (c), the metal layer 5 for cathode is uniformly and uniformly formed on the EL layer 4 by a vapor deposition method or the like. Finally,
As shown in FIG. 1D, the hole transport layer 3, the EL layer 4 and the metal layer 5 are arranged from the EL layer side boundary surface of the anode 2 to the outer boundary surface of the metal layer 5 using a xenon laser beam cutter. The focused laser beam 6 is cut by scanning while making the focal point coincident with each other, and patterning is performed by dividing these into a plurality of parallel grooves to form the cathodes 5 in parallel. In this way, an organic EL device is obtained.
【００１１】本実施例では、図１に示すように、有機層
３，４さらにはカソード用金属層５の形成までは従来の
製造工程で積層してもよい。カソード用金属層５の形成
までおこなった素子部材を真空槽から取り出し、集束レ
ーザビーム光を用いて、正孔輸送層、ＥＬ層及び金属層
をカッティングし、パターニングを行なう。図に示すよ
うに、カソード用の金属層５の積層後、集光レーザビー
ム６の焦点をアノード２のＥＬ層側境界面から金属層５
の外側境界面までに位置するように制御して、集光レー
ザビーム６を平行に走査して、これによって少なくとも
ＥＬ層及び金属層の一部を切削してアノードと交差する
複数の帯状ＥＬ層及び帯状カソードを互いに平行に形成
する。かかる集光レーザビームを発生させて切削する装
置としては、キセノンレーザビームカッタが好ましい。
このように、カソード用金属層５からカソードをマスク
を用いることなく形成する。In this embodiment, as shown in FIG. 1, the organic layers 3 and 4 and the cathode metal layer 5 may be formed by a conventional manufacturing process until formation. The element member on which the cathode metal layer 5 has been formed is taken out from the vacuum chamber, and the hole transport layer, the EL layer and the metal layer are cut by using the focused laser beam light to perform patterning. As shown in the figure, after stacking the metal layer 5 for the cathode, the focal point of the focused laser beam 6 is changed from the EL layer side boundary surface of the anode 2 to the metal layer 5.
Of the strip-shaped EL layers intersecting with the anode by controlling the laser beam to be positioned up to the outer boundary surface of the laser and scanning the focused laser beam 6 in parallel, thereby cutting at least a part of the EL layer and the metal layer. And the strip cathodes are formed parallel to each other. A xenon laser beam cutter is preferable as an apparatus for generating and cutting the condensed laser beam.
Thus, the cathode is formed from the cathode metal layer 5 without using a mask.
【００１２】本実施例によれば、従来の作成方法による
欠点を解決できると共に、カソードのラインが非常に微
細でかつピクセルサイズが小さくなる。他の実施例とし
て正孔輸送層を有する二層構造の有機ＥＬ素子を製造す
る。まず、図２（ａ）に示すように、ガラス基板１の主
面一面にＩＴＯからなるアノード用ＩＴＯ層２を均一に
一様になるようにスパッタリング法及びリソグラフィ法
などによって積層する。さらに、このＩＴＯ２層上に正
孔輸送層３、ＥＬ層４を蒸着法などによって均一に一様
に順次形成する。このようにＩＴＯ層、正孔輸送層及び
ＥＬ層を一様に担持した基板を真空槽から取り出し、図
２（ｂ）に示すように、これらの層２，３，４を、キセ
ノンレーザビームカッタを用い集光レーザビーム６によ
ってストライプ状にカッティングし、これらを複数の平
行溝にて分割する。次に、図２（ｃ）に示すように、分
割されたＥＬ層４上に蒸着法などによってカソード用金
属層５を均一に一様に形成する。最後に、再びキセノン
レーザビームカッタを用い、この正孔輸送層３、ＥＬ層
４及び金属層５を、ストライプ状のアノード２に直角方
向に沿ってカッティングし、これらを複数の平行溝にて
分割する。このとき集光レーザビーム６は、アノード２
のＥＬ層側境界面から金属層５の外側境界面までに焦点
が位置するように走査する。このようにしても、有機Ｅ
Ｌ素子が得られる。According to this embodiment, the drawbacks of the conventional fabrication method can be solved, and the cathode lines are very fine and the pixel size is small. As another example, a two-layer organic EL device having a hole transport layer is manufactured. First, as shown in FIG. 2A, the anode ITO layer 2 made of ITO is laminated on the entire main surface of the glass substrate 1 by a sputtering method, a lithographic method, or the like so as to be uniform. Further, the hole transport layer 3 and the EL layer 4 are sequentially and uniformly formed on the ITO 2 layer by a vapor deposition method or the like. The substrate on which the ITO layer, the hole transport layer and the EL layer were uniformly carried in this manner was taken out of the vacuum chamber, and these layers 2, 3 and 4 were separated by a xenon laser beam cutter as shown in FIG. 2 (b). Is used to cut into a stripe shape by the focused laser beam 6, and these are divided by a plurality of parallel grooves. Next, as shown in FIG. 2C, the metal layer 5 for cathode is uniformly formed on the divided EL layer 4 by a vapor deposition method or the like. Finally, using the xenon laser beam cutter again, the hole transport layer 3, the EL layer 4, and the metal layer 5 are cut along the stripe-shaped anode 2 in the direction perpendicular to each other, and these are divided by a plurality of parallel grooves. To do. At this time, the focused laser beam 6 is emitted from the anode 2
The scanning is performed so that the focal point is located from the EL layer side boundary surface to the outer boundary surface of the metal layer 5. Even in this way, organic E
An L element is obtained.
【００１３】本実施例によれば、従来の製造方法の欠点
であったカソードのパターン不良などの欠陥が解決でき
るとともに、アノード２をストライプ状に形成するため
エッチング等の作業が省略でき、ドットサイズの極めて
小さい高密度なＥＬ素子を容易に作成できる。また、正
孔輸送層及びＥＬ層をＩＴＯ層と同時に切断するため、
これら有機層を介しての漏洩電流が少なくなり、クロス
トークの少ないマトリクス方式の有機ＥＬ素子を提供で
きる。According to this embodiment, defects such as a defective pattern of the cathode, which is a defect of the conventional manufacturing method, can be solved, and since the anode 2 is formed in a stripe shape, the work such as etching can be omitted and the dot size can be reduced. It is possible to easily produce a high-density EL element having a very small size. Further, since the hole transport layer and the EL layer are cut at the same time as the ITO layer,
A leakage current through these organic layers is reduced, and a matrix type organic EL element with less crosstalk can be provided.
【００１４】上記実施例では二層構造の有機ＥＬ素子に
ついて説明したが、上記工程において、ＥＬ層を形成
後、電子輸送層を成膜する電子輸送層形成工程を加え
て、その後カソード電極を形成して、正孔輸送層、ＥＬ
層及び電子輸送層を有する三層構造の有機ＥＬ素子を得
ることが出来る。上記実施例では有機ＥＬ素子について
説明したが、上記工程において、ＥＬ層を無機化合物か
ら形成し、アノードとＥＬ層との間に第１絶縁層を成膜
するような第１絶縁層形成工程を加え、ＥＬ層とカソー
ドとの間に第２絶縁層を成膜するような第２絶縁層形成
工程を加えれば無機ＥＬ素子を得ることが出来る。ま
た、この場合、電極とＥＬ層との間に絶縁層又は誘電層
を有する交流形としても、電極とＥＬ層との間に絶縁層
を有さない直流形のＥＬ素子にしても適用できる。Although the organic EL device having a two-layer structure has been described in the above embodiment, an electron transport layer forming process of forming an electron transport layer after forming the EL layer is added in the above process, and then a cathode electrode is formed. Then, the hole transport layer, EL
An organic EL device having a three-layer structure having a layer and an electron transport layer can be obtained. Although the organic EL element has been described in the above embodiments, the first insulating layer forming step of forming an EL layer from an inorganic compound and forming a first insulating layer between the anode and the EL layer in the above step is described. In addition, an inorganic EL element can be obtained by adding a second insulating layer forming step of forming a second insulating layer between the EL layer and the cathode. Further, in this case, an AC type EL element having an insulating layer or a dielectric layer between an electrode and an EL layer or a DC type EL element having no insulating layer between an electrode and an EL layer can be applied.
【００１５】[0015]
【発明の効果】以上の如く、本発明によれば、カソード
及び／又はアノード用の電極材料層の積層後、集光レー
ザビームの焦点をアノードのＥＬ層側境界面から金属層
の外側境界面までに位置するように制御して、集光レー
ザビームを平行に走査して、これによって少なくともＥ
Ｌ層及び電極材料層の一部を切削してアノード電極と交
差する複数の帯状ＥＬ層及び帯状カソード電極を互いに
平行に形成するので、パターン不良が少ない微細なドッ
トを有する高密度のＥＬ素子を簡素な工程で得られる。
該ＥＬ素子へ電力を印加し発光させる時においても発光
領域のみが発光し、発光領域の周囲のクロストークや発
光の「にじみ」が減少し、精細な画像が得られる。As described above, according to the present invention, after stacking the electrode material layers for the cathode and / or the anode, the focus of the focused laser beam is changed from the EL layer side boundary surface of the anode to the outer boundary surface of the metal layer. And the collimated laser beam is scanned in parallel so that at least E
A part of the L layer and the electrode material layer is cut to form a plurality of strip-shaped EL layers and strip-shaped cathode electrodes that intersect with the anode electrodes in parallel with each other, so that a high-density EL element having fine dots with few pattern defects can be obtained. Obtained in a simple process.
Even when electric power is applied to the EL element to cause it to emit light, only the light emitting region emits light, crosstalk around the light emitting region and “bleeding” of light emission are reduced, and a fine image is obtained.
【図１】本発明による実施例のＥＬ素子製造方法におけ
る素子部材を示す拡大部分斜視図である。FIG. 1 is an enlarged partial perspective view showing an element member in an EL element manufacturing method of an example according to the present invention.
【図２】本発明による他の実施例のＥＬ素子製造方法に
おける素子部材を示す拡大部分斜視図である。FIG. 2 is an enlarged partial perspective view showing an element member in an EL element manufacturing method of another embodiment according to the present invention.
【図３】有機ＥＬ素子の部分切欠拡大斜視図である。FIG. 3 is a partially cutaway enlarged perspective view of an organic EL element.
【図４】図４の有機ＥＬ素子の部分拡大断面図である。FIG. 4 is a partially enlarged cross-sectional view of the organic EL element of FIG.
【図５】従来のＥＬ素子製造方法を示すフローチャート
である。FIG. 5 is a flowchart showing a conventional EL device manufacturing method.
１……透明基板 ２……透明アノード電極 ３……正孔輸送層 ４……有機ＥＬ層 ５……カソード電極 1 ... Transparent substrate 2 ... Transparent anode electrode 3 ... Hole transport layer 4 ... Organic EL layer 5 ... Cathode electrode
Claims (8)
ソード電極及びアノード電極の電極対と前記電極対間に
配置されたエレクトロルミネッセンス層とを有し、前記
エレクトロルミネッセンス層の前記電極対によって挾ま
れる複数の部分を発光領域とするエレクトロルミネッセ
ンス素子の製造方法であって、基板上に第１電極材料層
からなる複数の帯状アノード電極を互いに平行に形成す
るアノード電極形成工程と、前記アノード電極上にエレ
クトロルミネッセンス層を成膜するエレクトロルミネッ
センス層形成工程と、前記エレクトロルミネッセンス層
上に第２電極材料層を成膜する第２電極材料層形成工程
と、集光レーザビームの焦点を前記アノード電極の前記
エレクトロルミネッセンス層側境界面から前記第２電極
材料層の外側境界面までに位置させつつ集光レーザビー
ムを走査して、少なくとも前記エレクトロルミネッセン
ス層及び前記２電極材料層の一部を切削して前記アノー
ド電極と交差する複数の帯状エレクトロルミネッセンス
層及び帯状カソード電極を互いに平行に形成するカソー
ド電極形成工程とを含むことを特徴とする製造方法。1. A plurality of electrode pairs of a cathode electrode and an anode electrode facing each other on a substrate, and an electroluminescence layer arranged between the electrode pairs, and sandwiched by the electrode pairs of the electroluminescence layer. A method for manufacturing an electroluminescent element having a plurality of portions as light emitting regions, comprising: an anode electrode forming step of forming a plurality of strip-shaped anode electrodes made of a first electrode material layer on a substrate in parallel with each other; An electroluminescent layer forming step of forming an electroluminescent layer; a second electrode material layer forming step of forming a second electrode material layer on the electroluminescent layer; and a focus of a focused laser beam on the anode electrode. From the boundary surface on the electroluminescence layer side to the outer boundary surface of the second electrode material layer While scanning with a focused laser beam, at least a part of the electroluminescent layer and the two-electrode material layer are cut to cross a plurality of strip-shaped electroluminescent layers and strip-shaped cathode electrodes with each other. And a step of forming cathode electrodes formed in parallel.
化合物からなり、前記アノード電極形成工程と前記エレ
クトロルミネッセンス層形成工程との間に有機化合物か
らなる正孔輸送層を成膜する正孔輸送層形成工程を有す
ることを特徴とする請求項１記載の製造方法。2. The hole transport layer forming step of forming a hole transport layer of an organic compound between the anode electrode forming step and the electroluminescent layer forming step, wherein the electroluminescent layer is made of an organic compound. The manufacturing method according to claim 1, further comprising:
程と前記第２電極材料層形成工程との間に有機化合物か
らなる電子輸送層を成膜する電子輸送層形成工程を有す
ることを特徴とする請求項２記載の製造方法。3. An electron transport layer forming step of forming an electron transport layer made of an organic compound between the electroluminescent layer forming step and the second electrode material layer forming step. The manufacturing method described.
化合物からなり、前記アノード電極形成工程と前記エレ
クトロルミネッセンス層形成工程との間に第１絶縁層を
成膜する第１絶縁層形成工程を有し、前記エレクトロル
ミネッセンス層形成工程と前記第２電極材料層形成工程
との間に第２絶縁層を成膜する第２絶縁層形成工程を有
することを特徴とする請求項１記載の製造方法。4. The electroluminescent layer is made of an inorganic compound, and has a first insulating layer forming step of forming a first insulating layer between the anode electrode forming step and the electroluminescent layer forming step, The manufacturing method according to claim 1, further comprising a second insulating layer forming step of forming a second insulating layer between the electroluminescent layer forming step and the second electrode material layer forming step.
ソード電極及びアノード電極の電極対と前記電極対間に
配置されたエレクトロルミネッセンス層とを有し、前記
エレクトロルミネッセンス層の前記電極対によって挾ま
れる複数の部分を発光領域とするエレクトロルミネッセ
ンス素子の製造方法であって、基板上に第１電極材料層
を成膜する第１電極材料層形成工程と、前記第１電極材
料層上にエレクトロルミネッセンス層を成膜するエレク
トロルミネッセンス層形成工程と、集光レーザビームの
焦点を前記基板の前記第１電極材料層側境界面から前記
エレクトロルミネッセンス層の外側境界面までに位置さ
せつつ集光レーザビームを走査して、少なくとも前記エ
レクトロルミネッセンス層及び前記１電極材料層の一部
を切削してアノード電極を互いに平行に形成するアノー
ド電極形成工程と、前記エレクトロルミネッセンス層上
に第２電極材料層を成膜する第２電極材料層形成工程
と、集光レーザビームの焦点を前記アノード電極の前記
エレクトロルミネッセンス層側境界面から前記第２電極
材料層の外側境界面までに位置させつつ集光レーザビー
ムを走査して、少なくとも前記エレクトロルミネッセン
ス層及び前記２電極材料層の一部を切削して前記アノー
ド電極と交差する複数の帯状カソード電極を互いに平行
に形成するカソード電極形成工程とを含むことを特徴と
する製造方法。5. An electrode pair of a plurality of cathode electrodes and an anode electrode facing each other on a substrate, and an electroluminescence layer arranged between the electrode pairs, and sandwiched by the electrode pairs of the electroluminescence layer. A method for manufacturing an electroluminescent element having a plurality of portions as light emitting regions, comprising: a first electrode material layer forming step of forming a first electrode material layer on a substrate; and an electroluminescent layer on the first electrode material layer. A step of forming an electroluminescent layer for forming a film, and scanning the focused laser beam while locating the focus of the focused laser beam from the boundary surface on the first electrode material layer side of the substrate to the outer boundary surface of the electroluminescent layer. Then, at least a part of the electroluminescent layer and the one electrode material layer is cut to form an anode. An anode electrode forming step of forming electrodes in parallel with each other, a second electrode material layer forming step of forming a second electrode material layer on the electroluminescent layer, and a focus of a focused laser beam on the anode electrode The anode is formed by scanning with a focused laser beam while being positioned from the boundary surface on the luminescence layer side to the outer boundary surface of the second electrode material layer, and cutting at least a part of the electroluminescence layer and the second electrode material layer. A cathode electrode forming step of forming a plurality of strip-shaped cathode electrodes that intersect the electrodes in parallel with each other.
化合物からなり、前記第１電極材料層形成工程と前記エ
レクトロルミネッセンス層形成工程との間に有機化合物
からなる正孔輸送層を成膜する正孔輸送層形成工程を有
することを特徴とする請求項５記載の製造方法。6. The hole transport layer, wherein the electroluminescent layer is made of an organic compound, and a hole transport layer made of an organic compound is formed between the first electrode material layer forming step and the electroluminescent layer forming step. The manufacturing method according to claim 5, further comprising a forming step.
料層形成工程との間に有機化合物からなる電子輸送層を
成膜する電子輸送層形成工程を有することを特徴とする
請求項６記載の製造方法。7. The electron transport layer forming step of forming an electron transport layer made of an organic compound between the anode electrode forming step and the second electrode material layer forming step. Production method.
化合物からなり、前記第１電極材料層形成工程と前記エ
レクトロルミネッセンス層形成工程との間に第１絶縁層
を成膜する第１絶縁層形成工程を有し、前記アノード電
極形成工程と第２電極材料層形成工程との間に第２絶縁
層を成膜する第２絶縁層形成工程を有することを特徴と
する請求項５記載の製造方法。8. The electroluminescent layer is made of an inorganic compound and has a first insulating layer forming step of forming a first insulating layer between the first electrode material layer forming step and the electroluminescent layer forming step. The method according to claim 5, further comprising a second insulating layer forming step of forming a second insulating layer between the anode electrode forming step and the second electrode material layer forming step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3154933A JP2837559B2 (en) | 1991-06-26 | 1991-06-26 | Method for manufacturing electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3154933A JP2837559B2 (en) | 1991-06-26 | 1991-06-26 | Method for manufacturing electroluminescent element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH053077A true JPH053077A (en) | 1993-01-08 |
| JP2837559B2 JP2837559B2 (en) | 1998-12-16 |
Family
ID=15595117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3154933A Expired - Fee Related JP2837559B2 (en) | 1991-06-26 | 1991-06-26 | Method for manufacturing electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2837559B2 (en) |
Cited By (10)
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| EP0758192A2 (en) * | 1995-08-08 | 1997-02-12 | Pioneer Electronic Corporation | Organic electroluminescent element |
| JPH10172762A (en) * | 1996-12-11 | 1998-06-26 | Sanyo Electric Co Ltd | Manufacture of display device using electroluminescent element and display device therefor |
| EP0966182A1 (en) * | 1998-06-17 | 1999-12-22 | Lg Electronics Inc. | Method of fabricating organic electroluminescent display panel |
| US6341994B1 (en) | 1999-01-13 | 2002-01-29 | Nec Corporation | Organic electroluminescent display device and method of manufacturing the same |
| KR100466398B1 (en) * | 2000-11-14 | 2005-01-13 | 현대엘씨디주식회사 | Method for manufacturing cathode electrodes of electroluminescent display device |
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| KR100606443B1 (en) * | 1999-04-08 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | Method for fabricating an eld |
| KR100606444B1 (en) * | 1999-04-08 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | Method for fabricating an eld |
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1991
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| US5814417A (en) * | 1995-08-08 | 1998-09-29 | Pioneer Electronic Corporation | Organic electroluminescent element |
| EP0758192A2 (en) * | 1995-08-08 | 1997-02-12 | Pioneer Electronic Corporation | Organic electroluminescent element |
| JPH10172762A (en) * | 1996-12-11 | 1998-06-26 | Sanyo Electric Co Ltd | Manufacture of display device using electroluminescent element and display device therefor |
| US6642544B1 (en) | 1996-12-11 | 2003-11-04 | Sanyo Electric Co., Ltd. | Display apparatus using electroluminscence elements and method of manufacturing the same |
| EP0966182A1 (en) * | 1998-06-17 | 1999-12-22 | Lg Electronics Inc. | Method of fabricating organic electroluminescent display panel |
| US6341994B1 (en) | 1999-01-13 | 2002-01-29 | Nec Corporation | Organic electroluminescent display device and method of manufacturing the same |
| US6462470B1 (en) | 1999-01-13 | 2002-10-08 | Nec Corporation | Organic electroluminescent display with three kinds of layer-stacked devices |
| KR100606443B1 (en) * | 1999-04-08 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | Method for fabricating an eld |
| KR100606444B1 (en) * | 1999-04-08 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | Method for fabricating an eld |
| KR100466398B1 (en) * | 2000-11-14 | 2005-01-13 | 현대엘씨디주식회사 | Method for manufacturing cathode electrodes of electroluminescent display device |
| KR100623225B1 (en) * | 2001-03-08 | 2006-09-11 | 삼성에스디아이 주식회사 | OELD and Method for fabricating the same |
| JP2006065011A (en) * | 2004-08-27 | 2006-03-09 | Sony Corp | Element connection wiring, image display device, and method for cutting wiring |
| JP4674453B2 (en) * | 2004-08-27 | 2011-04-20 | ソニー株式会社 | Element connection wiring, image display device, and wiring cutting method |
| WO2008126263A1 (en) * | 2007-03-30 | 2008-10-23 | Pioneer Corporation | Organic electroluminescence device and process for manufacturing the same |
| JPWO2008126263A1 (en) * | 2007-03-30 | 2010-07-22 | パイオニア株式会社 | Organic electroluminescence device and manufacturing method thereof |
| JP5015237B2 (en) * | 2007-03-30 | 2012-08-29 | パイオニア株式会社 | Manufacturing method of organic EL display panel |
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