JPH1093160A - Film-forming method and film-forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and device for forming a film in which deterioration in reflectance of the surface of an aluminum film formed on a semiconductor wafer is restrained. SOLUTION: On a semiconductor wafer 100, having a hole 104, a barrier metal film 110 made of Ti and TiN is sequentially formed by a sputtering method as an underlying layer of aluminum 114. Then, a wettability-improving film 12 made of Ti having superior wettability with the aluminum 114 is formed similarly, and the aluminum 114 is formed thereon by using a reflow method or the like. In this invention, it is clarified that the temperature of the semiconductor wafer 100 at the time of Ti film forming of the barrier metal film 110 affects the orientation of TiN, Ti and the aluminum 114 above the semiconductor wafer 100, and that the orientation of the aluminum 114 affects its reflectance. Therefore, the reflectance of the aluminum 114 is improved by controlling the temperature of the semiconductor wafer 100 at the time of Ti film forming of the barrier metal film 110.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming technique or a flattening technique used in, for example, semiconductor manufacturing, and more particularly, to a film forming technique or a flattening technique of an aluminum material. Here, the aluminum material refers to aluminum or an alloy thereof.

[0002]

2. Description of the Related Art In recent years, semiconductor devices in which elements are highly integrated, such as VLSIs, tend to be miniaturized and multilayered. Under such a tendency, an electrode wiring forming technique for electrically connecting elements has also been miniaturized and multilayered. In particular, in the case of multi-layering, it is required to form an ideal multi-layered electrode wiring structure without steps, and therefore, a technique for planarizing the surface of a formed semiconductor wafer is important.

Hitherto, it has been known that a planarization technique is performed using an aluminum material. In a recent aluminum material flattening technique, a barrier metal film made of titanium (hereinafter, referred to as “Ti”) and titanium nitride (hereinafter, referred to as “TiN”) is used as an aluminum material base, and PVD (Physical Vapor Deposition: Films are sequentially formed by a sputtering method which is one of physical vapor deposition methods. Thus, for example, when electrode wirings made of an aluminum material are formed in multiple layers on a semiconductor wafer made of silicon via an insulating film having holes, they do not react with each other or with silicon. Alternatively, a wettability improving film made of Ti may be formed before the aluminum material is formed to improve the wettability between the aluminum material and the base.

[0004]

However, in the above-mentioned conventional method, the reflectance of the surface of the aluminum material may decrease. Below this aluminum material, alignment marks are usually formed on the semiconductor wafer. However, because the reflectance of the deposited aluminum material is low,
From the appearance of the semiconductor wafer, it is difficult to identify the alignment mark. Therefore, it is difficult to align the alignment mark formed on the exposure mask with the alignment mark on the semiconductor wafer before applying the photoresist to the semiconductor wafer and performing the exposure before etching the aluminum material. If the alignment mark alignment accuracy is reduced, the exposure will not be accurate, and as a result, the yield of semiconductor devices may be reduced.

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a film forming method and a film forming apparatus in which a decrease in the reflectance of the surface of an aluminum material is suppressed.

[0006]

According to the present invention, there is provided a film forming method for forming a thin film on a substrate by sputtering at a predetermined temperature. It has been clarified that the orientation of can be controlled.

[0007] For example, when the thin film is made of Ti, if the temperature of the substrate is set in the range of 50 ° C to 200 ° C, more preferably in the range of 50 ° C to 100 ° C, the film is formed with excellent orientation. Thus, a thin film of Ti is obtained.

[0008] TiN is deposited on the Ti thin film thus formed.
Is formed by a sputtering method to form a barrier metal film, and when aluminum or an aluminum alloy thereof is formed on the barrier metal film by a sputtering method, aluminum that is specifically oriented according to its orientation is formed. The material is formed as a result, and its reflectivity is high.

In order to improve the wettability between the barrier metal film made of Ti and TiN and the aluminum material,
A wettability improving film made of Ti may be formed on the barrier metal film.

On the other hand, according to the aluminum material film forming apparatus of the present invention, a first chamber for forming a film on a substrate by sputtering and a film for forming a film in the first chamber by sputtering are used. Gas supply means for supplying a gas of
Support means for supporting a substrate provided in the first chamber, a target disposed in the first chamber so as to face the support means, and heating attached to the support means for heating the substrate And a control means attached to the support means for controlling the heating means so that the substrate has a predetermined temperature.

Here, when the first chamber is made of Ti by forming the target from Ti and using argon gas as the gas, the orientation of the thin film can be controlled. Preferably, when the temperature of the substrate controlled by the control device is in the range of 50 ° C. to 200 ° C. to form a Ti film, a thin film having excellent orientation can be obtained. More preferably, the temperature is set in the range of 50 ° C to 100 ° C and T
i may be formed.

Further, in order to form a barrier metal film made of Ti and TiN, the first chamber is made of Ti and the gas is made of a mixed gas of argon gas and nitrogen gas or ammonia gas.
May be formed.

A second chamber may be provided for depositing, for example, an aluminum material used for electrode wiring on the barrier metal film by aluminum or an aluminum alloy thereof. At this time, it is possible to obtain a TiN or aluminum material specifically oriented according to the orientation of the barrier metal film. Moreover, the resulting aluminum material has a high reflectivity.

Further, between the first chamber and the second chamber, a third chamber is provided in communication with the first chamber and the second chamber to enable the transfer of the substrate under vacuum. You may be. Thus, a film can be formed by a consistent process without exposing the substrate to the atmosphere.

[0015]

Embodiments of the present invention will be described with reference to the drawings.

In the embodiment according to the present invention, when an aluminum material is formed on a semiconductor wafer as a substrate to be processed, Ti which forms a barrier metal film or a wettability improving film, which is one of the base materials, is used. It has been clarified that the temperature of the semiconductor wafer affects the orientation and reflectance of the aluminum material when forming a film.

Referring to FIG. 1, a film forming apparatus 10 according to the present invention will be described.
To explain, in the above device, a monolith
The main frame 12 is formed by an integral molding structure of aluminum called h), and the degree of vacuum can be maintained high by minimizing the welded portion. The main frame 12 is mainly composed of two chambers, a buffer chamber 14 and a transfer chamber 16.

Around the transfer chamber 16, P
VD chambers 18, 20, 22 and degas chamber 24
And are attached. The PVD chamber 18 (first chamber) is for enabling Ti or TiN to be formed on a semiconductor wafer by a sputtering method.
As shown in FIG. 2, the pedestal 43 includes a pedestal 43 (supporting means) for supporting the semiconductor wafer 100, and a Ti target 44 disposed to face the pedestal 43. Further, the PVD chamber 18 is provided with four gas supply devices.
5 are connected. The gas supply device 45 includes an argon gas source 46 and a nitrogen gas source 47 provided with supply valves 78 and 8 respectively.
0 to the PVD chamber 18. Further, a vacuum evacuation device 48 is connected to the PVD chamber 18 in order to make the inside of the PVD chamber 18 have a desired degree of vacuum. Note that the PVD chamber 18 may be supplied with a gas for nitriding Ti, for example, an ammonia gas instead of a nitrogen gas from a gas supply device.

A heating device 49 (heating means) is provided below the pedestal 43 of the PVD chamber 18.
The heating device 49 will be described with reference to FIG. 3. A heater coil 51 is interposed between heater plates 50 a and 50 b which are in close contact with each other, and the heater plates 50 a and 50 b
Is arranged to heat. Heater plate 50
a cooling water pipe 53 through a cooling plate 52
Are attached, so that the excessively heated heater plates 50a and 50b can be cooled via the cooling plate 52. Further, the heater plates 50a, 5
A gas pipe for heater 54 penetrating through Ob is connected to a through hole 55 extending from the upper surface of the pedestal 43 to the inside. In addition, a supply source (not shown) of an inert gas such as an argon gas is connected to the heater gas pipe 54 so that a predetermined amount of the inert gas is supplied to the upper surface of the pedestal 43. Therefore, the heating or cooling is performed by the heater plates 50a and 50b before the inert gas reaches the upper surface of the pedestal 43. Therefore, heat of the heater plates 50a and 50b having a specific temperature is transmitted to the upper surface of the pedestal 43 by the inert gas.

In order to measure the temperature near the upper surface of the pedestal 43, a thermometer 56 composed of a thermocouple is provided from the center of the lower part of the heating device 49 to the pedestal 43.
It is provided so as to extend to near the upper surface. Thereby, the temperature of the semiconductor wafer supported while being in thermal contact with the pedestal 43 can be measured. Although not shown, the pedestal 43 is provided with a clamp for fixing the semiconductor wafer at its peripheral edge so that the semiconductor wafer is not moved by the inert gas supplied to the upper surface of the pedestal 43.

The PVD chambers 20 and 22 (second chamber) are used for depositing aluminum or an alloy thereof by a sputtering method.
Has a heating device (not shown) similar to the PVD chamber 18 for heating a semiconductor wafer to be processed. The degas chamber 24 is used for heating a semiconductor wafer at a high temperature.

Since the load lock chambers 34a and 34b are arranged around the buffer chamber 14, when the semiconductor wafer to be processed is taken in and out, the vacuum is maintained without opening the buffer and the transfer chambers 14 and 16 to the atmosphere. can do. A degas orienter chamber 36 is disposed at a position adjacent to only the load lock chamber 34a, and adjusts degas and an orientation flat (hereinafter, referred to as "orifla") of a semiconductor wafer having holes. At a position adjacent to the load lock chamber 34b, a water-cooled cool-down chamber 38 for cooling the semiconductor wafer is disposed. Further, between the buffer chamber 14 and the transfer chamber 16, a cool-down chamber 40 similar to the above and a pre-clean chamber 42 for removing the oxidized / nitride thin film formed on the surface of the semiconductor wafer as a pretreatment are provided. ing.

The above mentioned chambers are all in communication,
Each communicating portion is partitioned by a shutter (not shown) that can be opened and closed. By these shutters, the aluminum material film forming apparatus 10 shown in FIG.
From 4a, 34b to PVD chambers 18, 20, 22, the stage is divided into five stages, and the degree of vacuum at each stage can be gradually increased. That is, the pressure is set to 1 × 10 ⁻⁵ Torr in the load lock chambers 34a and 34b.
The base, the buffer chamber 14, and the Degasuorienta and 1 × 10 ^-6 Torr stand in cool-down chamber 36 and 38, the 1 × 10 ^-7 Torr stand in preclean chamber 42, also in the transfer chamber 16 1 × 10 ^{- 8} Torr
And a PVD chamber and degas chamber 1
In 8, 20, 22, and 24, it can be on the order of 1 × 10 ^-9 Torr. For this reason, even when the shutter that partitions between the buffer and the transfer chambers 14 and 16 is open, cross contamination between the chambers is prevented.

A transfer robot arm 3 is provided at the center of the buffer and transfer chambers 14 and 16 so that the semiconductor wafer to be processed is transferred to each chamber.
0 and 32 are provided. Although not shown, PV
Each of the above chambers other than the D chamber 18 also has a pedestal for mounting the semiconductor wafer and a vacuum exhaust device for evacuating each chamber. Further, in the PVD chamber 18, a collimator (not shown) may be arranged between the target and the pedestal in order to regulate the flow of particles ejected from the target by sputtering.

In such a film forming apparatus, the flow rate of the argon gas, the flow rate of the nitrogen gas, and the temperature near the upper surface of the pedestal in the PVD chambers 18 and 22 are controlled by control means 60 such as a microcomputer shown in FIG. As shown in FIG. 4, the control means 60 is configured around a control device 52. The CPU 63 of the control device 62 receives an argon gas flow meter 66 and a nitrogen gas flow meter 68 via the input interface 54 and the PVD chamber 1
Thermometers 70 and 72 for measuring the temperature near the upper surface of the pedestal in 8 and 22, substantially the temperature of the semiconductor wafer 100.
Are connected, and the measured signal is transmitted to the control device 52. In addition, input means 76 composed of, for example, a keyboard is connected to the CPU 63 via an input interface 64. Gas flow rate and semiconductor wafer 10
When a desired value for the temperature of 0 is input from the input means 76, the above value is transmitted to the control device 62. In addition, the CPU 63 of the control device 52 supplies the driver 80, 82 of each of the argon gas supply valve and the nitrogen gas supply valve and the PV via the output interface 78.
The power supply drivers 84 and 86 for the heater coils in the D chambers 18 and 22 are connected, and furthermore, they are connected to the supply valves 88 and 90 and the power supply 9 for the heater coils.
2,94. Therefore, based on the measured value and the set value, the control means 60 configured as described above determines the flow rates of argon gas and nitrogen gas, P
The temperature near the pedestal upper surface in the VD chambers 18 and 22 can be adjusted.

An embodiment of the method of forming an aluminum material according to the present invention using the apparatus configured as described above will be described with particular reference to FIGS. 1, 2 and 5. FIG.

First, each of the divided stages (load locks 34a, 34b, buffer 1
4, pre-clean 42, transfer 16, and PVD
The degree of vacuum in the chambers 18 to 22) is gradually increased.
In the VD chambers 20 and 22, the pressure finally becomes 1 × 10 ^-9 T
Make orr ultra high vacuum. Next, the communication part between the load lock chambers 34a and 34b and the buffer chamber 14 is closed by a shutter, and the load lock chambers 34a and 34b are closed.
Atmospheric pressure inside The semiconductor wafer 100 with the orientation flat adjusted in advance in the pedestal inside the semiconductor wafer 100
Is placed. The semiconductor wafer 100 is made of, for example, SiO
It is assumed that the hole 104 is formed having the single-layer insulating film 106 made of ₂ (see FIG. 5A). Next, after the shutter is opened and the semiconductor wafer 100 is transferred to the pedestal of the degas orienter chamber 36 using the transfer robot arm 30, fine adjustment of the degas on the surface of the semiconductor wafer 100 and the orientation flat of the semiconductor wafer 100 is performed. The semiconductor wafer 100 as described above is transferred into the pre-clean chamber 42 by the transfer robot arm 30, and a natural oxide film or the like on the surface of the semiconductor wafer 100 is removed (not shown).

Next, after transferring the semiconductor wafer 100 to the pedestal 43 in the PVD chamber 18 using the transfer robot arm 32, the peripheral portion is fixed with a clamp. In this state, the semiconductor wafer 100 is heated or cooled to a desired temperature by using the heating device 49 in the PVD chamber 18, and then a film of Ti is formed on the surface of the semiconductor wafer 100 by a sputtering method. Subsequently, the gas supply device 45 is used to supply nitrogen gas into the PVD chamber 18 to make the inside of the PVD chamber 18 a nitrogen gas atmosphere. At this time, the Ti released by sputtering the Ti target 44 reacts with the nitrogen gas to reach TiN before reaching the surface of the semiconductor wafer 100, and becomes TiN.
Is formed on the surface of the semiconductor wafer 100. In this way, Ti and TiN are sequentially formed to form a barrier metal film 110 as shown in FIG. 5B. In addition,
The film formation of TiN is not limited to the method described above, and the surface of the Ti target 44 may be nitrided in a nitrogen gas atmosphere, and then sputtered to form a film on the surface of the semiconductor wafer 100.

Thereafter, the supply of the nitrogen gas from the gas supply device 45 is stopped, and the barrier metal film 110 is
The wettability improving film 112 made of Ti having excellent wettability with an aluminum material is formed by using the above-described sputtering method (see FIG. 5C).

Next, the semiconductor wafer 100 having the wettability improving film 112 formed thereon is transferred by the transfer robot arm 30 via the transfer chamber 16 to the PVD chamber 20.
Transfer to the pedestal inside. This film forming apparatus 10
Since the integration apparatus has a multi-chamber system including a plurality of chambers, the surface of the semiconductor wafer 100 is not oxidized by being exposed to the atmosphere, and the surface state does not change.

Thereafter, aluminum 114 is formed on the semiconductor wafer 100 by sputtering at room temperature. Next, after transferring the semiconductor wafer 100 to the pedestal of the PVD chamber 22, the semiconductor wafer 100 is heated to a predetermined temperature to form the aluminum film 1.
14 is melted. At this time, aluminum 11
4 is embedded in the interior 116 of the hole 104,
The surface is flattened on the surface of the semiconductor wafer 100 (FIG. 5D).
reference). Note that the flattening of aluminum is not limited to the reflow method described above, and a so-called two-step method may be used. That is, unlike the reflow method in which the aluminum 114 is simply heated, the semiconductor wafer is placed in the PVD chamber 22.
Aluminum or an alloy thereof may be further formed by a sputtering method while heating the semiconductor wafer in the inside.

The aluminum 114 formed as described above
Of the barrier metal and the wettability improving film 110, 1
When the temperature of the semiconductor wafer 100 is set to be the same during the film formation of Ti of No. 12, the temperature changes as a line graph shown in FIG. 6 according to the temperature. However, the reflectance on the vertical axis in this figure is 10% lower than the reflectance of the surface of a commercially available unprocessed silicon semiconductor substrate using light having a wavelength of 436 nm.
It is shown as 0%. From this graph, it can be seen that the reflectivity of the aluminum 114 decreases as the temperature of the semiconductor wafer 100 increases during the formation of each Ti. In particular, it can be seen that when the temperature of the wafer exceeds 200 ° C., the reflectance is significantly reduced. When forming the Ti film, the temperature of the semiconductor wafer 100 may be 5
When the temperature is lower than 0 ° C., for example, at about room temperature, the aluminum 114 is expected to have an even higher reflectivity, but it is extremely difficult at present to actually control such a temperature using the heating device 49. Is not realistic.

Further, a scanning electron microscope (Scanning Ele)
ctron Microscope: SEM)
FIGS. 7 and 8 show the morphological observation of the four surfaces. FIG. 7 shows a barrier metal film 110 and a wettability improving film 11.
The temperature of the semiconductor wafer 100 is 5
In the case of 0 ° C., FIG.
At 0 ° C., the surface of the aluminum 114 deposited on them is shown. As is clear from these figures, the semiconductor wafer 100
When the temperature of the semiconductor wafer 100 is set to 50 ° C., the surface of the aluminum 114 is extremely flat.
The surface when each Ti film is formed at 0 ° C. has many irregularities.

In order to find the above difference with respect to aluminum 114, the barrier metal film 110 and the wettability improving film 11
When a specific monochromatic X-ray is applied to each of the films 2 and 114 to measure the diffraction intensity, the measurement results are as shown in FIGS. The so-called X-ray diffraction (XRD) used here
In the ion) method, the characteristic diffraction intensity and the appearance position, that is, the diffraction angle, differ depending on the substance and the crystal structure. For this reason, the substance and the crystal structure can be identified. 9 to 1
1 is a measurement result when each of the Ti films is formed at a temperature of 50 ° C. of the semiconductor wafer 100. Ti is formed only when oriented by (002) in terms of surface index, and TiN is formed by (11
The film is oriented only in 1), and the aluminum 1
It is analyzed that film 14 is oriented only to (111). On the other hand, the semiconductor wafer 100
12 to 12 show the measurement results when each Ti film was formed.
From FIG. 14, each Ti film is formed so as to be oriented also to (101). From FIGS. 11 and 14, the diffraction intensity of the aluminum 114 deposited with (111) orientation is steeper when the semiconductor wafer 100 is set to 50 ° C. and each Ti is deposited. Thus, the degree of Ti orientation in the barrier metal film 110 and the wettability improving film 112 strongly affects the orientation of the aluminum 114.

Next, barrier metal and wettability improving film 1
The semiconductor wafer 10 is used when forming Ti films 10 and 112.
When 0 is set to different temperatures, the reflectance of the aluminum 114 formed thereon is not dependent on the value of the temperature of the semiconductor wafer 100 at the time of forming the Ti of the wettability improving film 112.
Semiconductor wafer 10 at the time of Ti film formation of barrier metal film 110
It strongly depends on the temperature of 0. Referring to FIG.
Barrier metal film 11 with semiconductor wafer 100 at 50 ° C.
In the case where Ti of 0 is formed, even if Ti of the wettability improving film 112 is formed at 400 ° C. (see a white square point in FIG. 6), the reflectance does not decrease remarkably. Conversely, when the barrier metal film 110 is formed at a temperature of 400 ° C., even if the semiconductor wafer 100 is formed at a temperature of 50 ° C.
Even if the wettability improving film is formed in this manner (see the white triangle points in FIG. 6), the reflectance of the aluminum 114 is not significantly improved.

This is apparent from FIGS. 15 and 16, which are the results of measuring the wettability improving film 112 formed as described above using the XRD method.
That is, the semiconductor wafer 100 is placed on the barrier metal film 11.
0, when forming the Ti of the wettability improving film 112 at 50 ° C. and 400 ° C., respectively, the orientation of Ti (002) is high as shown in FIG. On the other hand, when the semiconductor wafer 100 is heated to 400 ° C. and 50 ° C. at the time of forming the barrier metal film 110 and the wettability improving film 112, respectively, as shown in FIG.
In addition to the orientation in 2), the orientation also occurs in (101). Further, it is clear from FIG. 9 that the Ti orientation of the barrier metal film 110 depends on the temperature of the semiconductor wafer 100 when forming the Ti. Therefore, from these results, the temperature of the semiconductor wafer 100 at the time of forming the Ti that forms the barrier metal film 110 is determined by the TiN of the barrier metal film 110 and the T
The orientation of i and aluminum 114 is controlled.

From the above, it can be seen that the wettability improving film 112 Ti
May be formed directly on the barrier metal film 110 without forming the film. In this case, the reflectance of aluminum when the semiconductor wafer 100 is set to 50 ° C. and Ti of the wettability improving film 112 is formed becomes 208% from the experiment, and the semiconductor wafer 10
When 0 was set to 400 ° C., the reflectance was 177%.

The barrier metal film 110 and the wettability improving film 1 formed when the temperature of the semiconductor wafer 100 is controlled.
When 12 is used when forming the aluminum 114, the aluminum 114 having a high orientation is formed, and a decrease in the reflectance thereof is suppressed. This facilitates the identification of the alignment mark formed on the semiconductor wafer 100. Therefore, when the semiconductor wafer 100 is coated with a photoresist and exposed before the aluminum 114 is etched, the alignment between the alignment mark formed on the exposure mask and the alignment mark on the semiconductor wafer becomes easy. In this method, (11
Since the aluminum 114 formed in the orientation 1) has excellent electromigration (EM) resistance,
The reliability of the semiconductor device is improved.

It should be noted that the insulating film is not limited to a single layer as in the above-described embodiment and experimental results. Although not shown, the method of forming an aluminum material according to the present invention can be applied to a semiconductor wafer 200 in which an insulating film is formed in multiple layers on a semiconductor substrate and electrode wiring made of aluminum is formed in advance. Further, EM may be further suppressed by using an aluminum alloy instead of aluminum described above.

[0040]

According to the film forming method and apparatus of the present invention, the aluminum material formed on the semiconductor wafer with the plane index oriented to (111) suppresses a decrease in reflectance. Therefore, the alignment marks formed on the semiconductor wafer can be easily identified, and the alignment accuracy of the alignment marks before exposure is improved. Therefore, exposure is performed accurately, and the yield of semiconductor devices is improved. In addition, since the aluminum material having a plane index of (111) is excellent in electromigration (EM) resistance, the reliability of the semiconductor device is improved.

[Brief description of the drawings]

FIG. 1 is a sectional view schematically showing an embodiment of a film forming apparatus to which the present invention is applied.

FIG. 2 is a side sectional view schematically showing a PVD chamber for forming a film of titanium or the like in the film forming apparatus of FIG.

3 is a side sectional view showing a heating device and a pedestal in the PVD chamber of FIG. 2 in detail.

FIG. 4 is a block diagram illustrating an example of a control unit of the film forming apparatus of the present invention and connection elements thereof.

FIG. 5 is a process chart showing one embodiment of a film forming method of the present invention.

FIG. 6 is a diagram showing the relationship between the reflectance of an aluminum material and the temperature of a semiconductor wafer when titanium is formed.

FIG. 7 is an electron micrograph (SEM image) of the surface of an aluminum film formed when the semiconductor wafer temperature during the film formation of titanium is 50 ° C.

FIG. 8 shows a semiconductor wafer temperature of 400 ° C. when forming a titanium film.
4 is an electron micrograph (SEM) of the surface of the aluminum film formed in the case of FIG.

FIG. 9 is a view showing a result of measuring a barrier metal film obtained by forming a titanium film at 50 ° C. by using the XRD method.

10 shows a wettability improving film obtained by forming a titanium film on a barrier metal film of FIG. 9 at 50 ° C. by XRD.
It is a figure showing the result of having measured using the method.

11 is a view showing a result of measurement of aluminum formed on the wettability improving film of FIG. 10 by using the XRD method.

FIG. 12 is a view showing a result of measuring a barrier metal film formed by forming titanium at 400 ° C. by using the XRD method.

FIG. 13 shows a wettability improving film obtained by forming a titanium film on a semiconductor wafer at 400 ° C. on the barrier metal film of FIG. 12,
It is a figure showing the result of having measured using the XRD method.

FIG. 14 is a view showing a result of measuring aluminum formed on the wettability improving film of FIG. 13 by using the XRD method.

FIG. 15 shows that the semiconductor wafer was heated at 50 ° C. and 400 ° C. at the time of forming titanium as a barrier metal film and a wettability improving film.
FIG. 9 is a view showing the results of measuring the wettability improving film by using the XRD method when the film thickness is set to “1”.

FIG. 16 shows a semiconductor wafer at 400 ° C. and 50 ° C. during the deposition of titanium as a barrier metal film and a wettability improving film, respectively.
FIG. 9 is a view showing the results of measuring the wettability improving film by using the XRD method when the film thickness is set to “1”.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Aluminum film-forming apparatus, 12 ... Main frame, 14 ... Buffer chamber, 16 ... Transfer chamber, 18 ... PVD chamber, 20 ... PVD chamber, 22 ... PVD chamber, 24 ... Degas chamber, 3
0: Robot arm, 32: Robot arm, 34a,
b: Load lock chamber, 36: Degas orienter chamber, 38: Cool down chamber, 40: Cool down chamber, 42: Preclean chamber, 49: Heating device, 50a, 50b: Heater plate, 51: Heater coil, 52: Cooling Plate, 53 ... cooling water pipe, 5
4: gas pipe for heater, 55: through hole, 56: thermometer,
Reference numeral 60: control means, 100: semiconductor wafer, 102: semiconductor substrate, 104: hole, 106: insulating film, 110: barrier metal film, 112: wettability improving film, 114: aluminum, 116: inside.

Claims (13)

[Claims] 1. A film forming method for forming a thin film on a substrate by sputtering, wherein the orientation of the thin film is controlled by setting the substrate at a predetermined temperature. 2. The method according to claim 1, wherein the thin film is titanium. 3. The film forming method according to claim 1, wherein a temperature of the substrate on which the thin film is formed is in a range of 50 ° C. to 200 ° C. 4. The film forming method according to claim 1, wherein a temperature of the substrate on which the thin film is formed is in a range of 50 ° C. to 100 ° C. 5. A step of forming a barrier metal film by forming titanium nitride on the thin film by a sputtering method, and a step of forming an aluminum material which is aluminum or an alloy thereof on the barrier metal film by a sputtering method. When,
The film forming method according to any one of claims 2 to 4, comprising: 6. A step of forming a barrier metal film by forming titanium nitride on the thin film by sputtering, and a step of forming a wettability improving film made of titanium on the barrier metal film by sputtering. The method according to claim 2, further comprising: forming a film of the aluminum material on the wettability improving film by a sputtering method. 7. A first chamber for forming a film on a substrate by a sputtering method, a gas supply unit for supplying a gas for forming a film by a sputtering method in the first chamber, Support means provided in the chamber for supporting the substrate; a target disposed in the first chamber so as to face the support means; and a heating device attached to the support means for heating the substrate. Means, and control means attached to the support means, for controlling the heating means so that the substrate has a predetermined temperature,
A film forming apparatus comprising: 8. The method according to claim 7, wherein the first chamber is configured to form titanium by forming the target from titanium and using the gas as argon gas. Membrane equipment. 9. The first chamber, wherein the target is made of titanium and the gas is a mixed gas of argon gas and nitrogen gas or ammonia gas,
The film forming apparatus according to claim 7, wherein a film of titanium nitride is formed. 10. The film forming apparatus according to claim 7, wherein the temperature of the substrate controlled by the control device is in a range of 50 ° C. to 200 ° C. 11. The film forming apparatus according to claim 7, wherein the temperature of the substrate controlled by the control device is in a range of 50 ° C. to 100 ° C. 12. A second chamber in which an aluminum material made of aluminum or an alloy thereof is formed by a sputtering method, wherein a second chamber is provided between the first chamber and the second chamber.
The film forming apparatus according to claim 7, wherein the substrate can be transferred under a vacuum. 13. A third chamber which is communicated with the first chamber and the second chamber and has a vacuum inside.
The film forming apparatus according to claim 12, comprising: