JPH04247870A - Vacuum treating device and film forming method using this device, and film formation - Google Patents

Abstract

PURPOSE:To allow the formation of high-quality films by calculating the true temp. of the base body in a vacuum treating chamber in accordance with the corrected value of an IR sensitivity. CONSTITUTION:The base body 10 is heated and cooled to a known set temp. in a temp. calibrating stage 5. A radiation rate is determined in accordance with the known temp. of the base body 10 by a 1st IR radiation thermometer 11 and the temp. of the base body 10 is computed therefrom in order to correctly display this temp. The base body 10 is subjected to a vacuum treatment in the vacuum treating chamber 4. The real temperature of the base body 10 is measured by a 2nd IR radiation thermometer 14. The true temp. of the base body 10 placed in the vacuum treating chamber 4 is calculated in accordance with the corrected value of the IR sensitivity determined by a temp. calibrating chamber 2 from the output of the 2nd IR radiation thermometer 14. The exact temp. control of the base body is executed in a vacuum, in this way.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a vacuum processing apparatus that performs various treatments on a substrate in a vacuum, a film forming apparatus using the same, and a film forming method, and particularly relates to a film forming method used in the manufacturing process of semiconductor devices. The present invention relates to a vacuum processing apparatus suitable for use in a vacuum processing apparatus, a film forming apparatus using the same, and a film forming method.

0002

2. Description of the Related Art In process equipment used for manufacturing semiconductor devices, accurate control of process temperature is important in order to realize well-controlled reactions. A typical process device in which temperature is the most important setting condition is a so-called furnace body such as an oxidation furnace. Inside this type of furnace body is an oxidizing atmosphere that has replaced the atmosphere. In this case, the replacement atmosphere is at atmospheric pressure or higher, and the silicon wafer in the furnace body, for example, is heated by radiation from a heater installed around the quartz tube and heat conduction due to the atmospheric pressure atmosphere in the quartz tube. . That is, since there is a medium that conducts heat, temperature can be measured relatively accurately using a measuring probe such as a thermocouple installed in the heat-conducting atmosphere. Also,
An example of a device that does not use a thermally conductive medium is a photoresist baking device used in the process of applying photoresist for use as a mask in the etching process. In this device, baking is performed in an atmospheric pressure atmosphere, but the silicon wafer is placed on a heat block that has a larger heat capacity than the silicon wafer heated to a predetermined baking temperature.
Further, the entire surface of the silicon wafer is pressed against the heat block by atmospheric pressure using a vacuum chuck provided on the heat block side. For this reason, the temperature of the wafer is balanced with the temperature of the heat block, so that the temperature of the wafer can be accurately controlled and managed using a temperature measuring device such as a thermocouple attached to the heat block. Many semiconductor manufacturing processes rely on highly pure materials and well-controlled reactions in dust-free environments.
Processing in vacuum is often required.

Conventionally, accurate temperature control of wafers in vacuum in semiconductor manufacturing equipment has been essentially difficult for the following reasons.

In other words, in heating with a lamp heater, the wafer is heated only by radiation as there is no heat transfer medium, so as is well known, only a small amount of absorption occurs on a metal mirror surface, and a large amount of absorption occurs on a black body. Absorption occurs, and as a result, the degree of heating varies greatly depending on the surface condition of the heated wafer.

Attempts have been made to accurately measure the wafer temperature during the process by attaching a thermocouple to the wafer, but in order to measure the temperature of the wafer with the thermocouple in point contact with the wafer, It is difficult to maintain a constant and stable contact state, and the measurement temperature has poor reproducibility.

Furthermore, when heating a wafer by infrared radiation, since the wafer is almost transparent over a wide range of infrared radiation, heat is not transferred to the thermocouple only by conduction from the wafer, but by the thermocouple itself. Accurate wafer temperature measurement is difficult because the wafer may be heated by the lamp heater.

There is also a method of forcibly introducing a conductive medium into a vacuum. For example, as described in JP-A-56-48132 or JP-A-58-213434, a silicon wafer is clamped to a heat block installed in a vacuum atmosphere, and the back side of the silicon wafer and the heat block are By filling the gap with gas at a pressure of around 1 Torr, the temperature of the wafer is brought into equilibrium with the temperature of the heat block. In this case as well, the temperature of the wafer can be determined by a temperature measuring element such as a thermocouple attached to the heat block.

However, in this example, the wafer is clamped to the heat block with a smaller force than when a vacuum chuck is used under atmospheric pressure, so the temperature uniformity and reproducibility are not sufficient. The biggest drawback is that it takes time to conduct heat from the heat block to the wafer due to the low density of the heat transfer medium. Even if the heat block and wafer eventually reach thermal equilibrium, as mentioned in the example above, it will take several seconds to several tens of seconds, and furthermore, the reproducibility of this heat transfer time is questionable. Various factors are thought to have an influence.

As described above, whichever heating means is used, it is necessary to measure the temperature of the wafer in a vacuum and without contact. As one method, a method has been proposed in which an infrared thermometer is used to measure the radiation intensity from the wafer in the infrared region.

That is, in this method, a wafer is placed on a heat stage in a sputtering apparatus, and while being heated,
The temperature of the wafer is measured using an infrared thermometer through a through hole drilled in a target placed opposite the wafer. That is, the infrared emissivity of the wafer at a specific temperature is measured in advance using a calibration sample, and the wafer temperature during sputtering is controlled based on that value.

[0011] An example of a technology related to this type of technology is Japanese Patent Application Laid-Open No. 129966/1993.

0012

However, as described below, this method has several problems since the emissivity of the wafer is not necessarily constant, making accurate temperature measurement difficult.

That is, a silicon wafer on which a film of several hundred Å of the same metal as the target material, for example, aluminum, is deposited is used as the calibration sample, but this may vary depending on the presence or absence of a metal film on the surface of the wafer to be observed with an infrared thermometer. Since the infrared radiation rate from the wafer surface is different, temperature control before film formation cannot be performed.

Further, even after the start of film formation, accurate temperature measurement cannot be performed until the film is formed to a certain degree of thickness (for example, aluminum of 500 to 1000 Å). Furthermore, when a metal film is formed, a mirror surface is formed, resulting in a very low emissivity, which may make measurement difficult.

In order to accurately measure the temperature of a wafer in a vacuum and control the temperature accordingly, calibration is required as in this example, since even wafers with the same metal film have different infrared emissivity depending on the product lot. In a method in which a separate wafer is prepared, accurate temperature control cannot be performed because the wafer is not the actual wafer on which the film is actually formed.

[0016] As mentioned above, although various temperature control means have been used in conventional vacuum processing apparatuses, none have been able to accurately know and control the temperature of the process.

In other words, the ideal method for controlling the temperature of a wafer using an infrared thermometer is to calibrate the infrared thermometer using the wafer itself on which the film is actually formed, and to adjust the infrared radiation depending on the presence or absence of the film and its condition. This is a method that allows measurement without being affected by differences in rates. However, nothing that can be put to practical use has yet been proposed.

Therefore, an object of the present invention is to solve the above-mentioned conventional problems, and the first object is to provide an improved vacuum processing that can accurately measure and control the temperature of a substrate in vacuum. The second purpose of the device is to apply this vacuum processing device, such as a sputtering device or CVD (Chemical
A third purpose is to provide a film deposition method using this improved film deposition device, and a fourth purpose is to provide a method for measuring substrate temperature. .

[0019]

[Means for Solving the Problems] In order to achieve the above object, the present inventors conducted studies as detailed below and obtained various findings.

That is, in the present invention, in order to use an infrared radiation thermometer as a main means of temperature measurement, it is calibrated for each substrate (for example, a silicon wafer). Specifically, before processing the substrate with the target vacuum processing equipment, each substrate is heated or cooled to a known temperature, and a first infrared radiation thermometer is used to measure the temperature at one or multiple points. Measure the temperature of the substrate. From the indicated value of the first infrared radiation thermometer obtained at this time, the infrared radiation thermometer in the vacuum processing chamber is corrected after the temperature calibration stage. Of course, it is also possible to determine the emissivity by other means. Also, depending on the product, it is possible to save labor by doing this for each lot. Specifically, this correction value is known in advance and, for example, if coarse correction or a narrow temperature range is targeted, the infrared radiation thermometer after the temperature calibration stage is calibrated using a simple coefficient. If there are multiple temperature calibration points, there are methods such as importing the temperature calibration data for each into a computer and performing calculations for correction.

[0021] The temperature calibration stage described above is not limited to being in a vacuum, but may be in an atmospheric pressure environment. Under atmospheric pressure, not only is the device structure generally simpler, but
It is possible to more easily bring the temperature of the target wafer closer to the temperature of the heat block (stage) heated or cooled to a known temperature.

Specifically, when the temperature calibration stage is set under atmospheric pressure, it is possible to use a vacuum chuck on the stage to bring the substrate into close contact with a heat block that has a larger heat capacity than the substrate. By doing so, the temperature of the substrate can be brought closer to the heat block temperature more accurately and in a shorter time.

When it is necessary to raise the temperature at the temperature calibration point mentioned above, problems such as oxidation of the surface of the target substrate may occur depending on the atmosphere, so it is necessary to keep the atmosphere of the chamber where the temperature calibration stage is located from the atmosphere. It is more preferable to use a substitution atmosphere, such as a nitrogen or argon atmosphere.

When setting the temperature calibration stage under vacuum, in order to improve heat conduction between the heat block and the substrate as described above, heating or cooling gas is heated at a pressure of 5 Pascal or more between the two. By intervening as a conductive medium, the substrate temperature approaches that of the heat block in a relatively short period of time.

For example, in an apparatus for forming a thin film on a substrate by sputtering, when the substrate that has been in the atmosphere is brought into a vacuum processing tank, moisture adsorbed on the surface of the substrate is sufficiently removed. For this reason, it is necessary to heat the substrate to 150℃ or higher, or conversely, it is necessary to lower the temperature of the substrate, which has already been heated, to the film formation starting temperature of about 100℃ in a vacuum chamber. There are cases where there is. In the case of temperature increases and decreases, accurate temperature measurements are required each time temperature control is performed, and the infrared radiation thermometer used to measure these temperatures must be calibrated in advance for each substrate or for each different type of substrate. It is necessary to do so. That is, before performing a predetermined vacuum treatment, the substrate is heated or cooled to a known temperature, the temperature of the substrate is measured with a first infrared radiation thermometer, and the subsequent vacuum treatment process is determined based on the measurement result. If a film forming apparatus, such as a sputtering apparatus or a CVD apparatus, needs to accurately control the temperature of the substrate, is configured with a function that can calibrate one or more second infrared radiation thermometers used in the process. A process more suitable for electronic parts can be realized.

[0026] It is possible to carry out more accurate calibration by performing measurements by the first and second infrared radiation thermometers at the same wavelength in the infrared region.

Furthermore, when calibrating the first infrared radiation thermometer at the above-mentioned known temperature using a heated substrate, it is possible to remove moisture adsorbed on the substrate by heating the substrate to the known temperature in a vacuum. Since this process can also be used for the so-called baking process, the scale of the apparatus can be reduced, which is preferable in some cases. For example, when raising the temperature of a substrate in the vacuum processing chamber of a sputtering device, if an infrared radiation thermometer is calibrated in advance, radiant heating with a lamp can be used instead of using a heat block, which is cheaper. A sputtering device can be configured.

When heating with a lamp is used in the vacuum processing chamber, the light from the lamp may enter the infrared radiation thermometer as stray light, so the measurement wavelength of the infrared radiation thermometer is different from the wavelength radiated by the lamp. It is essentially preferable that the wavelength range be In order to increase the incidence of infrared rays from the base to the infrared thermometer and to reduce stray light, a mirror surface is installed on the side of the base opposite to the side where the infrared rays are heated. In this way, the temperature can be determined in this manner during lamp heating, and additional heating conditions can be determined based on the results.

When using a silicon wafer as the substrate, for example, since the silicon wafer is almost transparent in the infrared region, efficient heating cannot be achieved using the generally widely used infrared lamp containing quartz glass. Further, since this type of infrared lamp tends to cause stray light to the infrared radiation thermometer, it is more preferable to use a lamp with a short wavelength that has high absorption efficiency in the silicon wafer.

[0030] If the temperature at which film formation is started on the substrate in the vacuum processing chamber is lower than the baking heating temperature in vacuum for removing adsorbed moisture from the substrate, after baking Then, the substrate must be cooled to a predetermined temperature in a vacuum chamber, and the substrate must be brought to a predetermined film formation start temperature. In order to achieve such a film formation process with high precision, two stages are required: a stage equipped with a first infrared radiation thermometer for temperature calibration in a temperature calibration chamber, and a stage that bakes the substrate in a vacuum. , further comprising a stage of cooling to a predetermined film-forming starting temperature before starting film-forming;
There is also a need for a sputtering apparatus that is equipped with a second infrared radiation thermometer that can accurately measure the temperature of the substrate at the cooling stage by calculating and using the correction value obtained by the first infrared radiation thermometer. However, it is not always necessary that the part that performs temperature calibration be located close to or incorporated into the main body of the sputtering apparatus.

[0031] In order to observe the substrate with an infrared radiation thermometer, it is necessary to provide a through hole (opening window) for observation in the heating or cooling stage, but this causes non-uniformity in the temperature distribution of the substrate. Sometimes. In this case, the stage is divided into two parts within the same chamber, and both stages are adjusted to have the same temperature. That is, one heating or cooling stage is not provided with an aperture for observing the temperature of the substrate using an infrared radiation thermometer, the other temperature measurement stage is provided with an aperture, and the substrate is heated or cooled immediately after heating or cooling on one stage. Such non-uniformity can be reduced by transferring the sample to the other stage and measuring the temperature.

Providing multiple temperature calibration points enables more accurate process temperature control, but providing multiple heating means or cooling means in the substrate temperature calibration chamber makes calibration at multiple temperatures faster. Can be done on time.

In addition, in the case of an apparatus that forms a metal film by sputtering, the metal film formed on the substrate reflects the infrared rays radiated to the surface opposite to the surface to be observed, so a shutter as described later is used. If there is no film, the magnitude of the radiation that enters the infrared radiation thermometer will differ depending on the presence or absence of the film, and the apparent infrared radiation rate will differ, but the shutter will cause the radiation to reach the opposite surface of the base from the surface observed by the infrared radiation thermometer. Since most of the radiated infrared rays are reflected, the difference in apparent infrared rays emissivity before and after film formation can be significantly reduced.

In addition, in the stage for heating or cooling the substrate, the substrate is placed close to the surface opposite to the surface to be observed by the infrared radiation thermometer through the aperture window of the stage, and is sufficiently exposed to the measurement wavelength of the infrared radiation thermometer. By disposing a shutter mechanism whose main surface is made of a member having a mirror surface, it is possible to block stray light that penetrates the base and enters the infrared radiation thermometer.

The present invention has been achieved based on the above knowledge, and the means for achieving the object will be specifically described below.The first object is (1). a first infrared radiant thermometer for measuring radiant heat of a substrate on a temperature calibration stage, the first infrared radiant thermometer having means for heating or cooling the substrate placed on the stage to a known set temperature; means for calculating an emissivity based on the known temperature of the substrate from the output and calculating an infrared sensitivity correction value for correctly displaying the temperature of the substrate by the first infrared radiation thermometer; outputting a temperature calibration stage; a vacuum processing chamber comprising a stage on which a substrate is mounted; means for heating or cooling the substrate to a predetermined set temperature; and means for applying vacuum treatment to the substrate; a second infrared radiant thermometer that measures radiant heat of the base;
A vacuum processing apparatus comprising: means for calculating the true temperature of a substrate placed in a vacuum processing chamber based on an infrared sensitivity correction value determined by the temperature calibration stage from the output of the second infrared radiation thermometer; This is achieved by And preferably (2). a temperature calibration chamber equipped with means for heating or cooling a substrate placed on the stage to a known set temperature; a first infrared radiant thermometer for measuring radiant heat of the substrate on the temperature calibration stage; means for calculating an emissivity based on the known temperature of the substrate from the output of the first infrared radiation thermometer, and calculating an infrared sensitivity correction value for causing the first infrared radiation thermometer to correctly display the temperature of the substrate; ; a vacuum processing chamber comprising a stage on which the substrate exiting the temperature calibration stage is placed; means for heating or cooling the substrate to a predetermined temperature; and means for applying vacuum treatment to the substrate; a second infrared radiant thermometer that measures the radiant heat of the substrate on the stage; means for calculating the true temperature of the heated substrate; adjusting the temperature by which the temperature of the substrate determined from the output of the second infrared radiation thermometer deviates from the predetermined set temperature in the vacuum processing chamber; Temperature control means; and a shutter mechanism disposed close to the substrate in each of the chambers, the main surface of which is made of a member that is sufficiently mirror-like for the measurement wavelength of the infrared thermometer. This is accomplished using a vacuum processing device consisting of: Furthermore, (3). Each of the above stages has an observation hole provided for observing the temperature of the substrate with the infrared radiation thermometer, an optical path for guiding infrared light from the substrate to the infrared radiation thermometer, and an optical path in contact with the substrate. A movable optical path closing device that is located in the plane of the stage, has a gas introduction means for filling the space between the base and the stage with a predetermined gas at a predetermined gas pressure, and is capable of closing the observation hole. By the vacuum processing apparatus described in (1) or (2) above, which is equipped with a substrate temperature control means consisting of a shutter, and (4). Each of the above stages has an observation hole for observing the temperature of the substrate with the infrared radiation thermometer, an optical path for guiding infrared light from the substrate to the infrared radiation thermometer, and a surface of the stage in contact with the substrate. The observation device is made of a material that is substantially transparent to the measurement wavelength of the infrared thermometer, and has a gas introduction means for filling the space formed between the base and the stage with a predetermined gas at a predetermined gas pressure. By the vacuum processing apparatus described in (1) or (2) above, which is equipped with a first window plate for separating the vacuum atmosphere between the substrate side and the infrared thermometer side of the use hole, the substrate temperature is controlled. , (5). Each of the stages described above is provided with a substrate temperature control means comprising a second window plate thinner than the first window plate between the first window plate and the infrared thermometer. ) or (6) according to the ideal value of the vacuum location described in (2). The first window plate is equipped with a substrate temperature control means made of a material capable of transmitting infrared radiation having a longer wavelength than the second window plate (1) or (2) above. ) The vacuum processing apparatus described in (7). The first and second infrared radiation thermometers are configured to perform measurements at the same wavelength in the infrared region, respectively, by the vacuum processing apparatus described in (1) or (2) above, and (8) ．． (1) above, wherein means for heating or cooling the substrate on the temperature calibration stage to a known predetermined temperature is disposed outside the vacuum processing chamber;
Or by the vacuum processing apparatus described in (2), also (9
). The means for heating or cooling the substrate on the temperature calibration stage to a known predetermined temperature is provided by the vacuum processing apparatus according to any one of (1) to (8) above, wherein the means exists in a replacement atmosphere with the atmosphere; , (10). The means for heating or cooling the temperature of the substrate in the temperature calibration chamber to a known predetermined temperature comprises means for bringing the substrate into thermal contact with a member having a larger heat capacity than the substrate.
By the vacuum processing apparatus described in any one of 1) to (9), and (11). The means for bringing the base body into thermal contact with a member having a larger heat capacity than the base body comprises means for evacuating the space where the base body and the member are in contact with each other.
By the vacuum processing apparatus described in 0), also in (12). A means for heating or cooling the temperature of the substrate on the temperature calibration stage to a known predetermined temperature is provided in the vacuum processing chamber, a means for bringing the substrate into thermal contact with a member having a larger heat capacity than the substrate, and a means for bringing the substrate into thermal contact with a member having a larger heat capacity than the substrate; By the vacuum processing apparatus according to any one of (1) to (7) above, the vacuum processing apparatus is provided with a means for sealing a gas at a pressure of 5 Pascal or more in the space in which the
(13). (1) or (2) above, wherein a substrate temperature adjustment chamber is disposed between the substrate temperature calibration stage and the vacuum processing chamber, and each stage is provided with first, second, and third infrared radiation thermometers. ) The vacuum processing apparatus described in (14). At least a stage on which the substrate is placed in the vacuum processing chamber, a first stage provided with means for heating or cooling the substrate to a predetermined temperature;
The above (1) comprises means for setting the temperature of the substrate in the first stage, and then moving the substrate to the second stage and measuring the temperature.
) to (13), and (15). The vacuum processing apparatus according to any one of (1) to (9) above, in which at least one of the means for heating the substrate in the vacuum processing chamber comprises a lamp heating means, and (16). At least one of heating or cooling means for the substrate on the temperature calibration stage is provided on the stage, and a second heating or cooling means is disposed close to the upper surface of the substrate, and the temperature of the substrate is controlled from both sides. This is achieved by the vacuum processing apparatus according to any one of (1) to (13) above. And again, (1
7). Each stage in the vacuum processing chamber has a temperature control means for adjusting the temperature of the substrate determined from the output of the second infrared radiation thermometer by an amount that deviates from the predetermined set temperature in the vacuum processing chamber. The above (
1) The vacuum processing apparatus according to any one of (12).

The second objective is (18). A first method for measuring the radiant heat of the substrate on a temperature calibration device, which is equipped with means for heating or cooling the substrate placed on the stage to a known set temperature.
an infrared radiation thermometer; for determining emissivity based on the known temperature of the substrate from the output of the first infrared radiation thermometer, and causing the first infrared radiation thermometer to correctly display the temperature of the substrate. means for calculating an infrared sensitivity correction value; a stage on which the substrate leaving the temperature calibration stage is placed; means for heating or cooling the substrate to a predetermined set temperature; and means for performing a vacuum film forming process on the substrate. a second infrared radiation thermometer that measures the radiant heat of the substrate on the stage in the vacuum deposition processing chamber; and a temperature determined from the output of the second infrared radiation thermometer. means for calculating the true temperature of the substrate placed in the vacuum film forming processing chamber based on the infrared sensitivity correction value obtained at the calibration stage; a temperature control means for adjusting the temperature of the vacuum film forming chamber that deviates from the predetermined set temperature; This is achieved by a film forming apparatus comprising a shutter mechanism whose main surface is made of a member having a sufficiently mirror surface.

More specifically, preferably (19
). The sputtering film forming apparatus according to (18) above, wherein the vacuum processing chamber is a vacuum film forming processing chamber capable of forming a thin film under predetermined conditions by a sputtering method, and also (20). This is achieved by the CVD film forming apparatus described in (18) above, wherein the vacuum film forming chamber is configured with a vacuum film forming chamber capable of forming a thin film under predetermined conditions by the CVD method. Also, (21). The film formation according to (18) above, wherein a substrate temperature adjustment chamber is disposed between the substrate temperature calibration chamber and the vacuum film formation processing chamber, and each chamber is provided with an infrared radiation thermometer. Depending on the device, (2
2). The set temperature of the substrate temperature adjustment chamber is maintained at a different temperature, lower or higher than that of the substrate temperature calibration chamber and the vacuum film formation processing chamber on the substrate.
By the film forming apparatus described in 21), and also in (23).
This is achieved by the film forming apparatus described in (21) or (22) above, in which the vacuum film forming processing chamber is a sputtering film forming chamber.

The third objective is (24). A predetermined substrate for film formation is placed on a stage in a substrate temperature calibration chamber, the substrate is heated to a predetermined temperature, and then the substrate is cooled to a predetermined temperature under vacuum, and the substrate is placed in a vacuum film formation processing chamber. a step of transporting the substrate to a stage in the substrate and controlling it to a predetermined first film-forming set temperature to start film formation; and then controlling the substrate temperature to a second set temperature higher than the first film-forming set temperature. The process of forming a film until it reaches a predetermined thickness, and after the film formation is completed,
By the film forming method using the film forming apparatus described in (18) above, which comprises the step of rapidly cooling to below the second film forming set temperature, and (25). A step of placing a predetermined substrate for film-forming treatment on a substrate temperature calibration stage and heating the substrate to a predetermined temperature, and then a step of transporting the substrate to a stage in a substrate temperature adjustment chamber and cooling it to a predetermined temperature. Then, the substrate is transported to the stage in the vacuum film-forming processing chamber and the first
a step of starting a first film formation at a film formation temperature of a step of increasing the crystal grains of the film by holding it at a second set temperature for a certain period of time, and controlling the temperature of the substrate to a third film forming temperature higher than the second set temperature in the substrate temperature adjustment chamber. This is achieved by the film forming method using the film forming apparatus described in (21) above, which comprises a second film forming step in which the film is formed to a predetermined film thickness, and a rapid cooling step.

The fourth objective is (26). A substrate whose temperature is to be measured, an infrared radiation thermometer to measure the temperature of the substrate, and an infrared radiation thermometer to measure the temperature on the surface opposite to the surface of the substrate whose temperature is to be measured with the infrared radiation thermometer. This is achieved by a substrate temperature measuring method in which a mirror surface having a sufficient reflectance for the infrared wavelength to be measured is installed substantially perpendicular to the optical axis, and the temperature of the substrate is measured. Or (27). An infrared radiation thermometer that measures the temperature of a substrate to be subjected to heat treatment or cooling treatment, and an infrared radiation thermometer that uses a mirror surface that has a sufficiently high reflectance at the measurement wavelength on the opposite side of the substrate. and,
Preferably, the substrate temperature control method includes a heating or cooling means for performing the above treatment, as described in (28). The substrate temperature control method according to (27) above, wherein the heating or cooling means controls the substrate to a predetermined temperature based on the measured value from the infrared radiation thermometer, or (
29). According to the temperature control method of (27) to (28) above, the mirror surface can be moved to the optical axis of the infrared radiation thermometer on the opposite side of the base body as necessary.
Or (30). The heating means performs at least the first and second heating, and after the first heating, measures the substrate temperature using the mirror surface and an infrared radiation thermometer. Based on the results, the target temperature is determined by the second heating. According to the method of controlling the substrate temperature of (27) to (29) above, or (31). According to the substrate temperature control method according to claim items (27) to (30), characterized in that an object having sufficiently low reflection at the measurement wavelength, contrary to the mirror surface, can be introduced into the place where the mirror surface is placed. , achieved.

[0040]

[Operation] Before performing a prescribed process on the substrate in the vacuum processing chamber, the substrate is heated or cooled to a known temperature in the temperature calibration stage, and the temperature of the substrate is measured using the first infrared radiation thermometer and thermocouple. The correction value of the infrared radiation thermometer, that is, the emissivity, is calculated based on the measurement results. Based on this calculation result, the subsequent temperature of the substrate in the vacuum processing chamber is accurately measured using second and third thermometers. Then, based on the measurement results, the temperature control system is operated to set the temperature of the substrate in the vacuum processing chamber to a predetermined value, and vacuum processing such as film formation processing is performed under accurately controlled temperature conditions.

[0041] Also, in the temperature calibration stage, the first
By measuring the calibration temperature using an infrared radiation thermometer and thermocouple at multiple different temperatures, it is possible to control the process temperature over a wide temperature range when controlling the temperature of the substrate in the vacuum processing chamber. Control becomes possible.

Furthermore, by providing a plurality of heating means or cooling means for measuring the calibration temperature using the first infrared radiation thermometer and thermocouple described above, calibration at a plurality of different temperatures can be performed in a shorter time. It can be carried out.

Instead of using the above-mentioned first infrared thermometer, it is also possible to use a lamp of the measurement wavelength and determine the absorbance from the reflectance and transmittance, and then determine the emissivity.

Furthermore, if the product is the same, it may be sufficient to obtain calibration values for each lot. In order to observe the substrate with an infrared radiation thermometer while the substrate is being heated or cooled, it is necessary to provide a through hole (opening window) in the heating or cooling stage, but this through hole may cause irregularities in the temperature distribution of the substrate. Homogeneity may occur. As a countermeasure against this problem, it is possible to heat both the front and back sides of the substrate, but the stage can be divided into two, and one stage for heating or cooling the substrate has no opening window and is dedicated to temperature control. An opening window may be provided in the temperature measurement stage, and the temperature measurement may be performed by moving the substrate from one stage to the other stage.

In the present invention, disposing a shutter close to the substrate when measuring the temperature of the substrate plays a very important role in accurately measuring the temperature of the substrate.

The first role is that in the case of an apparatus that forms a metal film by sputtering or CVD, this shutter emits the same infrared rays used to form the metal film, regardless of the presence or absence of the metal film. Since the emissivity can be obtained, the difference in apparent infrared emissivity before and after film formation can be corrected, and the second purpose is to enable correct temperature control of the substrate based on accurate temperature measurement. Its role is to block stray light that penetrates the base and enters the infrared radiation thermometer, thereby preventing measurement errors due to stray light.

This shutter mechanism is especially necessary on the thermometer side of the substrate before film formation. When an absorber is used together with a shutter, the level of the stray light component can be accurately obtained by measuring without the absorber, so the measurement limit due to stray light can always be known.

Note that other functions that could not be explained here will be specifically explained in the Examples section.

[0049]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

Example 1. FIG. 1 is a schematic configuration diagram showing an embodiment in which the vacuum processing apparatus of the present invention is applied to a sputtering film forming apparatus. In this embodiment, a silicon wafer is used as a substrate to be film-formed, and an example in which an Al thin film is formed by sputtering will be described as a representative example. The vacuum processing apparatus 1 of the present invention includes a substrate temperature adjustment chamber 2 having a substrate temperature adjustment stage 5, a substrate temperature adjustment chamber 3 having a substrate temperature adjustment stage 6 for heating and cooling the substrate, and a sputter film forming stage 7. It consists of three chambers: an Al target 8 and a sputter film forming chamber 4 having a sputter electrode 9. These chambers are connected and independent by gate valves GVI and GV2, respectively. Further, an exhaust system is connected to the substrate temperature calibration chamber 2 and the sputtering film forming chamber 4, so that one can maintain a predetermined vacuum state, and the other can introduce a predetermined gas from the gas inlet to the substrate temperature calibration chamber. In 2, air or nitrogen gas can be introduced and the pressure can be set to atmospheric pressure.
The sputtering film forming chamber 4 is configured to be able to set an environment in which a sputtering gas is introduced and plasma is generated by a predetermined discharge. Furthermore, each stage is provided with heating and cooling means as described below, and
An opening window 19 consisting of a through hole for observing infrared radiation from the base body 10 is provided, and the first, second, and third infrared radiation thermometers 11 are optically coupled through this opening window 19. , 14 and 15 are connected. The substrate temperature calibration stage 5 is provided with a thermocouple 12 for accurately measuring the temperature of the substrate temperature calibration stage 5. Then, by inputting the output from each infrared radiation thermometer and the output of the thermocouple 12, the emissivity of the first infrared radiation thermometer 11 is calculated, and the emissivity of the second and third infrared radiation thermometers is calculated based on the calculation result. The thermometers 14 and 15 are corrected to measure the correct temperature of the substrate 10 on each stage, and finally, based on these measurement data, a command to set the stage temperature to a predetermined stage is sent to the heating and cooling of each stage. A substrate temperature controller 13 is provided for controlling the temperature of the entire so-called vacuum processing apparatus, which feeds back the temperature of the stage to a predetermined value.

To explain the function of each chamber, the substrate temperature calibration chamber normally uses the first infrared radiation thermometer 11 to measure infrared radiation from the substrate 10, which is set at a known temperature higher than the film formation start temperature. The infrared radiation thermometer is calibrated by measuring and calculating the emissivity. The substrate temperature adjustment chamber 3 has a temperature adjustment function before transporting the substrate to the next sputter film forming chamber 4, and the sputter film forming chamber 4 has a function to form a film on the substrate by sputtering.

[0052] The temperature of each stage is controlled as follows.
A specific example of forming an Al thin film from an Al target 8 onto a silicon wafer substrate 10 by sputtering while holding the temperature at a predetermined temperature will be described. First, in the substrate temperature configuration chamber 2 placed under atmospheric pressure, the wipe 10 is placed on the calibration stage 5.
It is heated stepwise to three temperature points: 200°C, 300°C, and 400°C. Note that the heating and cooling methods in these stages 5, 6, and 7 will be described together later.

The substrate 1 heated on this calibration stage 5
0, the first infrared radiation thermometer 11 and thermocouple 12
The temperature is observed and measured by the arithmetic processing section of the substrate temperature controller 13 to obtain temperature indication values for each temperature stage. In other words, thermocouple 12
The temperature of the calibration stage which is parallel to the substrate temperature is actually measured, and the emissivity at that time is observed using the infrared radiation thermometer 11, and the arithmetic processing section of the substrate temperature controller 13 calculates this radiation. Obtain a temperature reading based on the rate.

Since the wafer 10 is heated to a known temperature in advance, the emissivity obtained from the first infrared radiation thermometer 11 can be calculated backwards, so that the temperature of the substrate in a vacuum thereafter can be determined. The processing temperatures of the temperature adjustment chamber 3 and the sputtering film forming chamber 4 are set using this emissivity.
The emissivity is corrected and read from the third infrared radiation thermometers 14 and 15.

When the emissivity calibration by the first infrared radiation thermometer 11 is completed, the inside of the substrate temperature calibration chamber 2 is evacuated to a vacuum state, and then the wafer 10 is moved into the calibration chamber by opening the gate valve GV1. 2 to a substrate temperature adjustment chamber 3 under vacuum, and a second infrared radiation thermometer 1
The temperature is measured by 4. Based on the measurement results, the temperature of the stage 6 is adjusted by the substrate temperature controller 13, and the temperature of the wafer 10 is adjusted.
Adjust the temperature to the desired temperature. In this example, 100℃
I set it to . Thereafter, the wafer 10 is connected to the gate valve GV.
2 is opened and transported to the stage 7 of the sputtering film forming chamber 4 in a vacuum state, the temperature is measured by the third infrared radiation thermometer 15, and the temperature of the stage 7 is adjusted to an arbitrary temperature based on the result. Sputter film formation is performed while controlling the temperature of the base 10 to an arbitrary temperature. In this example, Al was sputtered at a temperature of 250°C. After the sputter film formation, the wafer 10 was again transported to the calibration chamber 2, and the emissivity was recalibrated, and this emissivity was used for correction during temperature measurement during subsequent sputter film formation.

[0056] As a simple means for transporting between the chambers, for example, a transport mechanism using a heat-resistant belt made of silicone rubber or the like, a robot, or the like can be used.

Next, referring to FIG. 2, the outline of the structure of the stage on which the substrate is placed, the heating and cooling methods, and the method of measuring the emissivity of the wafer will be explained using the sputtering stage 7 as an example. (1) Substrate stage structure and heating and cooling method: The sputter stage 7 has a built-in electric heater 18 for heating the stage, and uses a heat transfer gas such as air or nitrogen gas to transfer heat to the wafer in vacuum. A clamp 17 is installed to uniformly bring the heat transfer gas into contact with the wafer. Further, an opening window 19 is provided to form a radiation observation cavity in order to measure the temperature of the wafer with an infrared radiation thermometer 15. When cooling the wafer, although not shown, a cooling medium such as Freon is circulated instead of the heater 18 to cool the stage, and the wafer is cooled by heat transfer gas in the same manner as described above.

Furthermore, in the calibration stage 5, since the inside of the chamber is at atmospheric pressure, vacuum evacuation is performed without using a heat transfer gas, and a vacuum chuck is used to maintain close contact with the stage and transfer heat by thermal conduction. .

(2) Measurement of emissivity: Next, a method of measuring the temperature of the wafer substrate using an infrared radiation thermometer will be explained. In this embodiment, infrared radiation thermometers 11, 14, and 15 are installed at the bottom of each stage to measure the temperature on the back side of the wafer, so that stray light from inside each chamber does not enter the infrared thermometers. A stray light blocking cylinder 16 is provided between each stage and the infrared radiation thermometer.

In this embodiment, the process in vacuum is the formation of an Al film on the substrate by sputtering. When the substrate is coated with an Al metal film, the emissivity increases significantly by the amount of radiation reflected from the Al film. Therefore, the emissivity measured and determined before the film forming process in the substrate temperature calibration chamber cannot be used after the film forming process.

In the present invention, the wafer on which the film forming process has been completed is heated again to a preset known temperature in the calibration chamber, and the emissivity is again measured for a new surface to perform recalibration. For example, by measuring the wafer immediately after film formation with an infrared radiation thermometer and calculating the correct emissivity by measuring the emissivity (second time) after film formation, the wafer temperature immediately after film formation can be accurately determined. It is possible to know.

For example, if the temperature of the wafer immediately after film formation is too high, the heating conditions are changed so as to reduce the amount of substrate heating performed during or before film formation.

[0063] If you want to lower the temperature immediately after film formation without changing the set temperature at the start of film formation, you can reduce the temperature by performing gas cooling on the substrate stage and adjusting the gas pressure on the back surface of the substrate. Substrate cooling settings in the film can be changed during film deposition.

In the above embodiment, an example was shown in which a thin Al film was formed on the surface of a silicon wafer by sputtering using a silicon wafer as a substrate. Good crystallinity was obtained and a high quality film could be formed.

Example 2. When a metal film is formed on the opposite side of the substrate 10 observed by an infrared radiation thermometer, the value of the apparent infrared emissivity may vary greatly depending on the presence or absence of the film. FIG. 3 shows an example in which a second temperature calibration chamber 32 is added to the sputtering film forming chamber 4 of FIG. 1 in order to calibrate the infrared emissivity of the substrate after film formation in a sputtering apparatus for this purpose. This is what is shown.

During film formation by sputtering, the temperature of the substrate is measured using an infrared radiation thermometer 15. However, in this case, since a metal film has already been formed on the surface of the substrate 10, the correction value of the infrared emissivity obtained in the substrate temperature calibration stage 2 cannot be used. For this reason, after sputter film formation, the substrate 1 is transferred from the sputter film formation chamber 4 to the
0 is transferred to the second temperature calibration chamber 32, heated or cooled to a predetermined temperature by the heating or cooling stage 33 in the same manner as the temperature calibration chamber 2, and then heated or cooled to a predetermined temperature by the infrared radiation thermometer 34.
The temperature is measured by the thermocouple 35, and the infrared emissivity of the substrate 10 after film formation at a predetermined temperature is calculated from the indicated values of both. By correcting the temperature data obtained during film formation with this value, it is possible to accurately know the temperature of the substrate during film formation. if. Substrate 1 during film formation learned in this way
If the temperature of 0 is too high than a predetermined value, feedback is applied to the heating means or cooling means of the substrate temperature adjustment chamber 3 as appropriate in order to adjust the temperature of the substrate appropriately. Membrane processing can be performed appropriately.

Note that the temperature calibration chamber for calibrating the infrared emissivity of the substrate after film formation is not necessarily the same as the temperature calibration chamber 2 for calibrating the infrared emissivity of the substrate before film formation as in this example. There is no need to prepare it separately. That is, after the film is formed in the sputter film forming chamber 4, the substrate is again transported to the temperature calibration chamber 2 via the substrate temperature adjustment chamber 3, where it is exposed to infrared radiation similar to the second temperature calibration chamber 32. Calibration of the ratio may be performed.

Example 3. In Examples 1 and 2, it was necessary to recalibrate the emissivity because the emissivity of the substrate changes when the substrate undergoes film formation, but this example improves this point and calibrates the emissivity once. By calibrating the emissivity, it is possible to correct the infrared radiation thermometer using this emissivity as a reference in subsequent film forming processes.

Similar to the first embodiment, this embodiment also describes an example of an apparatus for forming a film of aluminum on a silicon wafer substrate by sputtering.

FIG. 4 shows a schematic configuration diagram of a sputtering apparatus, which is basically the same as FIG. The shirt shutters 20, 21, and 22 are arranged close to each other.

The substrate 10 is first heated or cooled to a predetermined temperature by the heating or cooling stage 5 in the temperature calibration chamber 2, and then heated or cooled to a predetermined temperature by the first infrared radiation thermometer 11 and the thermocouple 1.
2, and the infrared emissivity of the base 10 at a predetermined temperature is calculated from both indicated values. When sputtering a metal film on the side of the substrate opposite to the side observed by an infrared thermometer, the value of the apparent infrared emissivity may vary greatly depending on the presence or absence of the film. It is possible to reduce the difference in apparent infrared emissivity due to presence or absence.

Note that the measurement using the infrared radiation thermometer 11 is performed with the shutter 20 closed.

Next, the substrate 10 is transferred from the temperature calibration chamber 2 to the substrate temperature adjustment chamber 3, and while being heated or cooled on the heating or cooling stage 6, the temperature of the substrate 10 is measured by the second infrared secondary thermometer 14. , the temperature of the heating or cooling stage 6 is adjusted to a predetermined temperature through the substrate temperature controller 13 by correction with the emissivity value of the substrate 10 at a predetermined temperature determined in the calibration chamber 2, and the temperature of the substrate 10 is set to a predetermined temperature. control the temperature. Note that the thermometer side of the substrate temperature adjustment chamber 3 is also measured with the shutter 21 closed, as in the case of the temperature calibration chamber 2.

After that, the substrate 10 is transferred to the sputter film forming chamber 4.
and is heated or cooled on a sputtering stage 7. At this time, the shutter 22 is closed over the substrate, the temperature of the substrate 10 is measured by the third infrared radiation thermometer 15, and the correct temperature is determined by correcting it with the emissivity value of the substrate 10 determined in the calibration chamber 2. Can be done. Furthermore, by knowing the correct temperature in this way, the substrate temperature controller 13
The temperature of the heating or cooling stage 7 is adjusted to a predetermined temperature through the steps, and the temperature of the substrate 10 is controlled to a predetermined temperature to start sputtering film formation. After the film formation is completed, the substrate 10 is returned to the substrate temperature adjustment chamber 3, and its temperature is measured by the second infrared radiation thermometer 14 while being heated or cooled on the stage 6. At this time, the temperature of the stage 6 is adjusted to a predetermined temperature through the substrate temperature controller 13 by correction with the emissivity value of the substrate at a predetermined temperature determined in the calibration chamber 2, and the substrate temperature is set to a predetermined value. do. Thereafter, the substrate is carried out from the vacuum processing apparatus 1 through the temperature calibration chamber 2 and proceeds to the next step.

Note that the temperature of the substrate 10 is measured at a plurality of temperatures by the first infrared thermometer 11 and thermocouple 12 in the substrate temperature calibration stage 2, and the second and third infrared radiation thermometers 14 and 15 are Its use allows for more accurate control of process temperature. Although not shown, by providing a plurality of means for heating or cooling the substrate for measurement with the first infrared radiation thermometer 11 for substrate temperature calibration, the temperature of the substrate at a plurality of similar temperatures can be adjusted. It becomes possible to perform calibration in a shorter time. Although temperature calibration has been explained above as being incorporated into the sputtering equipment, it is also possible to prepare it completely separately as mentioned above, or a means for measuring reflection and transmission can be used instead of the first infrared thermometer. It can also be used.

FIG. 5 shows a schematic diagram of the sputtering stage 7 shown in FIG. 4 as a representative example of the stage. The configuration of the stage is basically the same as the example shown in FIG. 2, except that a shutter 22 is provided close to the top of the base 10 in this example.

In other words, when sputtering a metal film on the side of the substrate opposite to the side observed by the infrared thermometer,
The value of the apparent infrared emissivity may vary greatly depending on the presence or absence of the film, but by installing this shutter, the difference in the apparent infrared emissivity due to the presence or absence of the film can be reduced.
As shown in FIG. 3, by providing a second temperature calibration chamber 32 or the like, it is no longer necessary to measure the temperature using an infrared thermometer twice before and after film formation, but only once.

This shutter has a mechanism that can be opened and closed to close the surface of the substrate during temperature measurement and to open it during film formation.For example, a stainless steel disc is supported on a rotatable drive shaft, and this drive It is configured to open and close by rotating the shaft.

Furthermore, since the silicon wafer substrate 10 is almost transparent to infrared rays, stray light may penetrate the substrate and enter the infrared radiation thermometer, reducing the accuracy of temperature measurement of the substrate. As a countermeasure for this, in this example, a shutter 22 is provided close to the substrate on the opposite side to the side observed by the infrared thermometer, and the main surface of which is constituted by a member that is sufficiently mirror-like for the measurement wavelength of the infrared radiation thermometer. , and is configured to block this stray light from entering while the infrared radiation thermometer 15 is measuring the temperature of the base 10 .

As described above, the role of the shutter mechanism is, first, to correct the increase in apparent emissivity due to the radiation light from the wafer that is reflected by the metal film when the metal film is formed on the wafer substrate. Secondly, this improves measurement accuracy by increasing the intensity of infrared radiation, and thirdly, stray light is blocked.

Note that FIG. 6 shows a schematic configuration diagram of the stage 6 in FIG. 4, which basically has the same configuration as the stage 7 in FIG. 5. The stage 6 has a built-in heater 18, and has a structure in which heat transfer gas flows in the space between the stage 6 and the base 10 in a vacuum, and a clamp 17 is provided to uniformly contact the heat transfer gas with the base. is set up. Base 1
An opening window 19 for measuring the temperature of 0 with an infrared radiation thermometer 14 is connected to a cylinder 16 for blocking stray light.
Window plates 23 and 24 made of a material that transmits infrared rays are attached to both ends of the window 6. Further, the cylinder 16 is water-cooled so that it does not become heated and become a source of stray light. In order to further reduce the influence of stray light, it is possible to further reduce the influence of stray light by performing blackbody treatment on the inner wall of the cylinder 16 after cooling. Also, in this example, similarly to the case of FIG. 5, a shirt shirt 21 is disposed close to the base body 10 as in FIG. Note that the above-mentioned shutter has (1) infrared reflectance in a mirror state. (2) Any structure may be used as long as it has the function of blocking stray light; for example, a structure that opens and closes freely in synchronization with the temperature measurement timing of the substrate, or a fixed shutter provided in one area of the chamber and Various configurations can be adopted, such as a mechanism for moving the substrate to the lower part of the shutter. If the appearance of this shutter on the wafer causes the temperature of the wafer to drop, it is preferable to heat the shutter to approximately the wafer temperature.

FIG. 7 is a characteristic curve showing the difference in the infrared emissivity of the silicon wafer substrate depending on the presence or absence of a shutter. FIG. 7(a) is a comparative example without a shutter, and FIG. 7(b) is a comparative example without a shutter.
It shows the measurement results of this example in which a shutter was provided. As is clear from this, the apparent infrared emissivity of the wafer before aluminum film formation (without Al film) in Fig. 7(a) is
Although the apparent infrared emissivity of the wafer after film formation (with Al film) is smaller than that of the wafer, and there is a considerable difference between the two, by installing a shutter on the wafer before Al film formation, the
As shown in b), it was found that the apparent infrared emissivity was almost the same as that of the wafer after Al film formation. This shows that by measuring the substrate temperature using the shutter, it is possible to measure with a constant emissivity.

Example 4. A temperature observation window plate made of a material that is substantially transparent to the measurement wavelength of an infrared radiation thermometer emits radiation light when its own temperature is increased, and this determines the minimum measurement temperature. In this embodiment, an example in which the minimum measurement temperature can be lowered by using the first and second window plates made of different materials will be described using the sputtering stage 7 of FIG. 8. Although this embodiment does not use a shutter on the base, it goes without saying that even if a shutter is used, the object can be achieved in the same way.

An electric heater 18 is provided inside the sputtering stage 7-1. If a coolant such as liquid nitrogen is introduced into the sputtering stage 7 instead of the heater, it can be used to cool the substrate.

Reference numeral 30 is a small window provided on the sputtering stage 7-1, into which the first window plate 24 is fitted. Although this material will be described later, a material that can efficiently transmit infrared rays, such as barium fluoride or calcium fluoride, is used. For this reason, the airtightness of the space formed between the substrate 10 and the sputtering stage 7 is maintained, and the pressure in this space is maintained at a suitable pressure of around several Torr.

In order to pass the infrared radiant light from the back surface of the substrate (Si wafer in this example) 10 placed on the sputtering stage 7-1 with the infrared (radiation) thermometer 5, the optical path 36 is provided. It is set in.

[0087] The infrared thermometer 14 is installed in the atmosphere. For this purpose, the optical path 36 must pass through the boundary between atmosphere and vacuum. Reference numeral 31 designates an observation window for this purpose, and as will be described later, the second window plate 23 is made of a material that efficiently transmits infrared rays, such as barium fluoride or calcium fluoride. Since this second window plate 23 must withstand atmospheric pressure, it is usually used with a thickness of about 5 mm to ensure strength.

The pipe 32 is for introducing Ar gas into the space formed between the base 10 and the sputtering stage. The sputtering stage 7-1 is heated to a predetermined temperature in advance, and the substrate 10 is placed on the sputtering stage 7-1.
-1, the board 10 is pressed by the clamp 17,
When Ar gas is introduced, heat transfer from sputtering stage 7-1 to substrate 10 begins, and the temperature of the substrate quickly begins to rise.

If it is found that the temperature of the substrate is at the desired temperature, it is sufficient to start a process such as film formation by sputtering using, for example, the sputtering target 8 placed opposite to the substrate 10; if it is found that the temperature is too low, If so, heating may be continued until a predetermined temperature is reached by adjusting the temperature of the sputtering stage.

The first window plate 24, which is located immediately after the substrate 10 and is in direct contact with gas as a heat medium that fills the space created by the substrate 10 and the sputtering stage 7-1, is a heat medium using gas as well as the substrate 10. is heated.

The infrared thermometer 14 is connected to the first window plate 24 and the second window plate 24.
Although the substrate is "viewed" through the window plate 23, the second window plate 23 will be described later, and the first window plate 24 will be described first. When the first window plate 24 is thick, the intensity of infrared radiation from the substrate naturally decreases. Similarly, the fact that the first window plate 24 is thick and has a large absorption loss means that when the temperature of the first window plate 24 rises, radiation from the partition plate itself will occur accordingly. ing.

[0092] Therefore, it is desirable that the thickness of the first window plate 24 be as thin as possible. If the first window plate 24 is to directly partition the atmosphere from the space created by the substrate and the sputtering stage, a thickness of about 5 mm is required to provide strength to withstand atmospheric pressure, as described above. is necessary. However, if barium fluoride with a thickness of 5 mm is heated to 400° C., it emits extremely strong radiation, making it impossible to observe the infrared rays radiated by a certain substrate 10 beyond that point. Furthermore, since the first window plate 24 and the substrate 10 are heated using a gas, they both move in an attempt to converge to the same temperature. Therefore, from this point of view, the first window plate 2
4 needs to be thin.

There are very few materials that efficiently transmit infrared rays, and commonly used glass, quartz glass, etc. are not suitable at all as materials that transmit infrared rays. Therefore, both the first and second window plates 24 and 23 must be made of a material such as barium fluoride.

The first window plate 24 is used for sputtering.
The typical pressure of r is several mTorr. Moreover, the pressure in the space created between the substrate 10 and the sputtering stage 7-1 is several T at most.
It is orr. Therefore, the pressure applied before and after the first partition plate 14 is small, and the partition plate does not need to have any strength. This is because the second window 23 is in charge of the interface with atmospheric pressure.

Therefore, it is sufficient for the first window plate 24 to have a thickness of 1 mm. From the above description of the embodiment, by using a thinner first window plate 24 on the substrate side than the second window plate 23 between the first window cutting plate 24 and the infrared thermometer, the first It has been sufficiently stated that the influence of radiant light from the window plate 24 can be reduced.

FIG. 9 shows the infrared light transmission characteristics of barium fluoride. This characteristic was shown at room temperature and at 500°C. The data sources are "Basic Physical Properties Charts" (Kyoritsu Publishing, first edition published on May 15, 1972), pages 491-492 (barium fluoride) and pages 468-469 (calcium fluoride).

[0097] When forming a film by sputtering Al, the substrate (usually a Si wafer or the like) may be heated to a maximum of about 500°C during film formation. In the case of 1000°C in Figure 9, infrared light that was transmitted up to 14 μm at room temperature changes to 10 μm.
It is only transparent to a certain extent. In this case 10
In the range from μm to 14 μm, absorption of infrared light occurs, which means that radiation of infrared light also occurs.

[0098] If the second window plate 23 is made of barium fluoride like the first window plate 24, the first window plate 24 will be made of barium fluoride.
As the temperature rises to ℃, the radiated infrared light
Since the window plate 23 is at room temperature, the light passes through the second window plate 23 and is observed as if it were infrared light from the substrate 10.

Figure 10 shows the transmission characteristics of calcium fluoride for infrared light at room temperature, but the transmission characteristics do not extend toward longer wavelengths than the transmission characteristics of barium fluoride at room temperature shown in Figure 9. I understand. This calcium fluoride is applied to the second window plate 2.
3, even if the first window plate 24 is heated and starts radiating itself, this infrared radiated light will be transmitted to the partition plate 24.
This unnecessary radiation does not enter the infrared thermometer located behind the sensor. Therefore, stable measurement is possible regardless of the temperature of the first window plate 24.

Example 5. In this example, Fig. 1 shows an example of how heating and cooling can be performed without problems even when there is no window plate in the observation window for measuring the temperature of the substrate provided on the sputtering stage.
1 will be used for explanation. Although this embodiment does not use a shutter on the base, it goes without saying that even if a shutter is used, the object can be achieved in the same way.

Reference numeral 30 is a small window provided in the sputtering stage 7, which converts the infrared rays radiated from the back side of the substrate (Si wafer in this example) placed on the sputtering stage 7-1 into an infrared ray ( A light path 36 is provided to pass through for observation with the radiation thermometer 5.

[0102] The infrared thermometer 14 is installed in the atmosphere. For this purpose, the optical path 36 must pass through the boundary between atmosphere and vacuum. Reference numeral 23 designates a window for this purpose, and the window material is made of a material that efficiently transmits infrared rays, such as barium fluoride or calcium fluoride.

The pipe 8 is for introducing Ar gas into the space formed between the substrate 10 and the sputtering stage. The substrate 10 is pressed against the sputtering stage by a clamp 17.

[0104] The small window 30 of the sputtering stage 7-1 is connected to the lid 3.
5, it is sealed. That is, the lid 35 is supported by a crank-shaped drive shaft 34, and this drive shaft 34 can move up and down and rotate. Figure 1
In No. 1, the lid is halfway down, but when Lid No. 3 is lowered,
5 can lower its position, sputtering stage 7
After reaching a position sufficiently below -1, it can be rotated and evacuated to a position where it does not interfere with the optical path 36 for observation of the infrared thermometer.

Conversely, the drive shaft 34 can rise from the position shown in FIG. 9, and at the top dead center, the sputtering stage 7
The small window 30 of -1 can be completely covered by the lid 35 from below.

For this purpose, the substrate 10 and the sputtering stage 7
The airtightness of the space between -1 and -1 is maintained, and the pressure of this space is maintained at a pressure within a suitable number of Torr.

[0107] The substrate 10 is fixed to the sputtering stage 7-1 with the clamp 17, and the edge of the substrate and the edge of the sputtering stage are in close contact with each other, and a valve is formed in the space formed between the surface of the substrate 10 and the sputtering stage 7-1. By adjusting 33,
For example, Ar gas is introduced. At this time, the drive shaft 34 has risen to its top dead center, and the small window 30 of the sputtering stage 7-1 is closed by the lid 35. In this way, the substrate 10 is removed from the sputtering stage 7-1.
Heat transfer to the substrate begins, and the temperature of the substrate quickly begins to rise. When a suitable time has elapsed, the drive shaft 35 is rotated downward and removed from the optical path 36, so that the back surface of the substrate 10 can be observed using the infrared thermometer 14. Since the lid 35 has been lowered, it is no longer possible to maintain a gas pressure of several Torr between the back surface of the substrate 10 and the sputtering stage 7-1, so that the temperature rise of the substrate 10 is almost stagnant.

[0108] If it is found that the temperature of the substrate is at the desired temperature, processing such as film formation by sputtering can be started using, for example, the sputtering target 8 placed opposite to the substrate 10; if it is found that the temperature is too low, If there is, use the lid 35 again and fill it with gas to continue heating.

Example 6. If the temperature distribution of the substrate becomes uneven due to the opening window 19 on the heating or cooling stage for measuring the infrared temperature of the substrate, separate the opening window 19 from the through hole (opening window) 19 as shown in FIG. After the substrate 10 is heated or cooled on a stage 25 dedicated to heating or cooling provided at The temperature distribution of 10 can be measured in a more uniform state.

Example 7. If the substrate is heated or cooled only from either the front side or the back side, a temperature difference will occur between the front side and the back side of the base body. Therefore, as shown in FIG. 13, heating or cooling means 28 and 28 are provided on each side so that the temperature can be controlled from both sides of the front and back surfaces of the base.
By providing 9, the temperature difference between both sides can be reduced. Moreover, this also makes it possible to reduce the non-uniformity of temperature distribution on the substrate due to the opening window 19.

Example 8. Another example in which an aluminum film is formed by sputtering on a silicon wafer substrate 10 using the sputtering apparatus 1 shown in FIG. 4 will be described.

The silicon wafer substrate 10 is heated to 500° C. in the temperature calibration chamber 2 to remove adsorbed moisture, etc., and the temperature is measured with the thermocouple 12, and the emissivity of the infrared radiation thermometer 11 is calibrated based on this temperature. The wafer is then transferred to the substrate temperature adjustment chamber 3. The emissivity can be calibrated by irradiating the wafer with light at the measurement wavelength to calculate the transmittance and reflectance. You can ask for it and do it.

FIG. 14 is a conceptual diagram showing a method of measuring the emissivity of a substrate. A silicon wafer 43 is placed on the substrate temperature calibration stage 5 . A specular reflector 37 is installed above the silicon wafer 43. This specular reflector must have a sufficiently high reflectance in the target measurement wavelength range.

A beam splitter 38 is installed below the substrate temperature calibration stage 5. In this example, the reference light generator 39 uses an appropriate filter to obtain output light having a wavelength of about 10 μm as a main component, and the reference output light 40
passes through the beam splitter 38 and the silicon wafer 43
incident on . Reflected light 41 from the silicon wafer 43 is bent by the beam splitter and enters the photodetector 43.

The light radiated or transmitted above the silicon wafer 10 is reflected by the specular reflector 37, and all of the light is returned to the silicon wafer 10.

Generally, the emissivity is the absorption rate α when the incident light intensity I0, the transmitted light intensity It, and the reflected light intensity Ir are known.
is equal to, and is expressed by the following formula.

α=(I0-It-Ir)/I0 In the example shown in FIG. 14, the transmitted light It=0 because of the specular reflector 37. Therefore, by knowing the intensity I0 of the incident light on the silicon wafer 43 and the intensity Ir of the reflected light, the absorption rate or the emissivity can be calculated. In order to apply the emissivity obtained in this way to a substrate such as the silicon wafer 43 before vapor deposition, for example, measure the temperature from the back side with an infrared thermometer, and at that time, measure the temperature from the back side of the silicon wafer 43 Install a specular reflector. This specular reflector 37 is unnecessary during or after the metal film is deposited.

Returning to FIG. 4, the temperature of the wafer substrate 10 transferred to the substrate temperature adjustment chamber 3 is measured by the infrared radiation thermometer 14, and the temperature is controlled at a predetermined temperature by the temperature control of the stage 6.
The film is cooled down to 00° C. and transported to the sputter film forming chamber 4. The substrate 10 is sputtered in this sputtering film forming chamber 4 according to a temperature profile as shown in FIG. The target 8 used had a composition of 1% Si-3% Cu-Al. First, the temperature of the base 10 is set to 230°C.
The temperature of the substrate 10 is controlled to 300°C, and the first sputtering film is formed to a thickness of about 100 Å, and the sputtering is temporarily stopped there. The crystal grains of the Al film obtained by sputtering film formation in step 1 are grown to improve orientation and the like. Next, the substrate is again transported to the sputter film forming chamber 4, and after setting the substrate temperature to about 400° C., the second sputter film forming is restarted to form a film to a thickness of about 1 μm. As a result, an Al sputtered film with large crystal grains and good orientation can be obtained. After sputtering, the substrate is immediately transported to the substrate temperature adjustment chamber 3.
It is rapidly cooled to about 50°C. This made it possible to suppress the precipitation of Si and Cu in the Al sputtered film.

[0119] In the above embodiment, an example was shown in which a thin Al film was formed on the surface of a silicon wafer by sputtering using a silicon wafer as a base, but since the temperature of the base can be controlled with high precision via a stage, the reproducibility within the wafer can be improved. Good crystallinity and thin film microstructure were obtained, making it possible to form a film of excellent quality. For example, when heating a thin film of several hundred angstroms, the crystallinity could not be improved if the heating temperature was 350° C. or higher. Therefore, without the present invention, which allows accurate temperature determination, such a film forming method cannot be realized industrially.

[0120] In addition to the above-mentioned sputtering apparatus, the vacuum processing apparatus of the present invention can also be used with CVD (Chemical Vapor
Needless to say, the present invention can also be applied to a film forming apparatus etc.

For example, this method is effective when a silicon wafer substrate is used as a base and a tungsten film is formed on the substrate by CVD using a known method.

In any film forming apparatus of this type, the quality of the film formed depends on the accuracy of temperature control of the substrate, and the film forming apparatus of the present invention can fully meet this requirement.

[0123] Although a film forming apparatus can be realized by using the vacuum processing chamber as a film forming processing chamber as in the above embodiment, this vacuum processing chamber may also be used as a dry etching process such as plasma etching. It is also possible to use a chamber similar to the above, and the temperature control of the substrate to be etched can be easily realized in the same manner as in the above embodiment.

[0124]

As explained above, according to the present invention, it is possible to accurately control the temperature of a substrate in vacuum, and a vacuum processing apparatus capable of accurately controlling the temperature of the substrate is realized. By applying this to a film forming apparatus, the temperature before, during and after film formation, which requires accurate temperature control, can be easily managed, making it possible to form a high quality film.

[Brief explanation of the drawing]

FIG. 1 is a partially cross-sectional block diagram schematically illustrating a vacuum processing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional configuration diagram showing an example of a sputtering stage.

FIG. 3 is a partially sectional block diagram for schematic explanation of a vacuum processing apparatus showing another embodiment of the present invention.

FIG. 4 is a partially cross-sectional block diagram schematically illustrating a vacuum processing apparatus showing another embodiment of the present invention.

FIG. 5 is a schematic cross-sectional configuration diagram showing an example of a sputtering stage and a substrate temperature adjustment stage provided with a shutter mechanism.

FIG. 6 is a schematic cross-sectional configuration diagram showing an example of a sputtering stage and a substrate temperature adjustment stage provided with a shutter mechanism.

FIG. 7 is a characteristic curve diagram showing temperature measurement results with and without a shutter.

FIG. 8 is a schematic cross-sectional configuration diagram of a sputtering stage with a suitable combination of window plate materials.

FIG. 9 is an infrared light transmission characteristic diagram of BaF2 (barium fluoride).

FIG. 10 is an infrared light transmission characteristic diagram of CaF2 (calcium fluoride).

FIG. 11 is a partially cross-sectional block diagram schematically illustrating a vacuum processing apparatus showing another embodiment of the present invention.

FIG. 12 is a sectional view of a stage according to another embodiment of the present invention, in which the stage is divided into two parts within the same chamber.

FIG. 13 is a sectional view of a stage in which temperature control means are provided on both sides of the base.

FIG. 14 is a conceptual diagram showing a method of measuring the emissivity of a substrate.

FIG. 15 is an explanatory diagram showing one temperature profile during film formation.

[Explanation of symbols]

1. Vacuum processing equipment 2. Substrate temperature calibration chamber 3. Substrate temperature adjustment chamber 4. Sputter deposition chamber 5. Substrate temperature calibration stage 6. Substrate temperature adjustment stage 7, 7-1. Sputter stage 8. Target 9. Sputter electrode 10. Substrates 11, 14, 15. Infrared radiation thermometer 13. Substrate temperature controller 16. Stray light blocking cylinder 17. Board holder 18. Heat block internal heater 19. Opening windows 20-22. Shutter 23. Lower window plate 24. Upper window plate 30. Optical path 31 for temperature observation provided in the heat block
．． Viewing window between atmosphere and vacuum 32. Heat transfer medium gas introduction pipe 34. Drive shaft 35. Lid 36. Observation optical path of infrared thermometer 37. Specular reflector 38. Beam splitter 39. Reference light generator 40. Reference output light 41. Reflected light 42. Photodetector 43. Silicon wafers GV1, GV2. gate valve

Claims (31)

[Claims] 1. A temperature calibration stage comprising means for heating or cooling a substrate placed on the stage to a known set temperature; a first infrared radiant thermometer for measuring radiant heat of the substrate; means for calculating an emissivity based on the known temperature of the substrate from the output of the infrared radiation thermometer, and calculating an infrared sensitivity correction value for causing the first infrared radiation thermometer to correctly display the temperature of the substrate; a vacuum processing chamber comprising a stage on which a substrate that is the same as or different from the stage is placed, a means for heating or cooling the substrate to a predetermined set temperature, and a means for applying vacuum treatment to the substrate; radiant heat of the substrate; a second infrared radiation thermometer that measures the true temperature of the substrate placed in the vacuum processing chamber based on the infrared sensitivity correction value determined in the temperature calibration chamber from the output of the second infrared radiation thermometer; A vacuum processing apparatus comprising calculation means. 2. A temperature calibration stage comprising means for heating or cooling a substrate placed on the stage to a known set temperature; a first infrared radiant thermometer for measuring radiant heat of the substrate; means for calculating an emissivity based on the known temperature of the substrate from the output of the infrared radiation thermometer, and calculating an infrared sensitivity correction value for causing the first infrared radiation thermometer to correctly display the temperature of the substrate; the stage on which the base is placed or a different stage;
a vacuum processing chamber comprising means for heating or cooling the substrate to a predetermined set temperature and means for applying vacuum treatment to the substrate; a second infrared radiant thermometer for measuring radiant heat of the substrate; means for calculating the true temperature of the substrate placed in the vacuum processing chamber based on the infrared sensitivity correction value determined in the temperature calibration chamber from the output of the infrared radiation thermometer; 1. A vacuum processing apparatus comprising: a shutter mechanism, the main surface of which is made of a member that is sufficiently mirror-like for the measurement wavelength of an infrared thermometer; 3. Each of the stages has an observation hole provided for observing the temperature of the substrate with the infrared radiation thermometer, and a hole for guiding infrared light from the substrate to the infrared radiation thermometer. A movable type that is located in the plane of the stage in contact with the optical path and the substrate, has a gas introduction means for filling the space formed between the substrate and the stage with a specified gas at a specified gas pressure, and is capable of closing the observation hole. 3. The vacuum processing apparatus according to claim 1, further comprising substrate temperature control means comprising a shutter for blocking an optical path. 4. Each of the stages has an observation hole for observing the temperature of the substrate with the infrared radiation thermometer, an optical path for guiding infrared light from the substrate to the infrared radiation thermometer, and a substrate. A material that is located in the plane of the stage in contact with the substrate, has a gas introduction means for filling the space formed between the base and the stage with a predetermined gas at a predetermined gas pressure, and is substantially transparent to the measurement wavelength of the infrared radiation thermometer. 3. The vacuum processing apparatus according to claim 1, further comprising a control means comprising a first window plate for partitioning a vacuum atmosphere between the substrate side of the observation hole formed by the infrared thermometer and the infrared thermometer. 5. Each of the stages includes substrate temperature control means comprising a second window plate that is thinner than the first window plate between the first window plate and the infrared thermometer. 3. The vacuum processing apparatus according to claim 1, further comprising: a vacuum processing apparatus according to claim 1; 6. The first window plate is provided with substrate temperature control means made of a material capable of transmitting infrared radiation having a longer wavelength than the second window plate. 2. The vacuum processing apparatus according to 1 or 2. 7. The first and second infrared radiation thermometers include:
3. The vacuum processing apparatus according to claim 1, wherein the measurement is performed at the same wavelength in the infrared region. 8. The vacuum processing apparatus according to claim 1, further comprising means for heating or cooling the substrate on the temperature calibration stage to a known predetermined temperature, provided outside the vacuum processing chamber. 9. The vacuum processing apparatus according to claim 1, wherein the means for heating or cooling the substrate on the temperature calibration stage to a known predetermined temperature exists in an atmosphere replacing the air. . 10. The means for heating or cooling the temperature of the substrate on the temperature calibration stage to a known predetermined temperature comprises means for bringing the substrate into thermal contact with a member having a larger heat capacity than the substrate. 10. The vacuum processing apparatus according to any one of items 1 to 9. 11. The means for bringing the base body into thermal contact with a member having a larger heat capacity than the base member comprises means for evacuating a space where the base body and the member are in contact with each other.
0. The vacuum processing apparatus according to 0. 12. Means for heating or cooling the temperature of the substrate on the temperature calibration stage to a known predetermined temperature is located in a vacuum processing chamber, and means for bringing the substrate into thermal contact with a member having a larger heat capacity than the substrate. 8. The vacuum processing apparatus according to claim 1, further comprising means for sealing gas at a pressure of 5 Pascal or more in the space where the base body and the member are in contact. 13. Claim 1 or 2, wherein a substrate temperature adjustment stage is disposed between the substrate temperature calibration stage and the vacuum processing chamber, and the substrate temperature adjustment stage is provided with a third infrared radiation thermometer. The vacuum processing apparatus described. 14. At least the stage on which the substrate is placed in the vacuum processing chamber includes a first stage provided with means for heating or cooling the substrate to a predetermined temperature, and a second stage for measuring temperature. Claim 1, further comprising means for setting the temperature of the substrate in the first stage, and then moving the substrate to the second stage and measuring the temperature.
14. The vacuum processing apparatus according to any one of Substrates to 13. 15. The vacuum processing apparatus according to claim 1, wherein at least one of the means for heating the substrate in the vacuum processing chamber comprises lamp heating means. 16. At least one of means for heating or cooling the substrate on the temperature calibration stage is provided on the stage, and a second heating or cooling means is disposed close to the upper surface of the substrate, 14. The vacuum processing apparatus according to claim 1, wherein the temperature of the substrate is controlled from both sides. 17. Each stage in the vacuum processing chamber adjusts the temperature of the substrate determined from the output of the second infrared radiation thermometer by an amount that deviates from the predetermined set temperature in the vacuum processing chamber. 13. The vacuum processing apparatus according to claim 1, further comprising temperature control means for controlling the substrate. 18. A temperature calibration stage comprising means for heating or cooling a substrate placed on the stage to a known set temperature; a first infrared radiant thermometer for measuring radiant heat of the substrate on the stage; Determining the emissivity based on the known temperature of the substrate from the output of the first infrared radiation thermometer,
means for calculating an infrared sensitivity correction value for correctly displaying the temperature of the substrate by the first infrared radiation thermometer; the same as or a stage for temperature calibration;
a vacuum film-forming processing chamber comprising means for heating or cooling the substrate to a predetermined set temperature, and means for performing vacuum film-forming processing on the substrate; a second infrared radiant thermometer for measuring radiant heat of the substrate; a substrate placed in a vacuum film-forming processing chamber based on an infrared sensitivity correction value obtained at the temperature calibration stage from the output of the second infrared radiant thermometer; means for calculating the true temperature of the second infrared radiation thermometer; a temperature that adjusts the amount by which the temperature of the substrate determined from the output of the second infrared radiation thermometer deviates from the predetermined set temperature in the vacuum film forming processing chamber; control means; and a shutter mechanism disposed close to the substrate in each of the chambers, the main surface of which is formed of a member that is sufficiently mirror-like for the measurement wavelength of the infrared thermometer. Film forming equipment consisting of: 19. The sputtering film forming apparatus according to claim 18, wherein said vacuum film forming chamber is a vacuum film forming chamber capable of forming a thin film under predetermined conditions by a sputtering method. 20. The CV according to claim 18, wherein the vacuum film forming processing chamber is a vacuum film forming processing chamber capable of forming a thin film under predetermined conditions by a CVD method.
D film forming equipment. 21. A substrate temperature adjustment stage is disposed between the substrate temperature calibration stage and the vacuum film forming processing chamber,
18. The chamber further comprises a stage for adjusting the temperature of the substrate and an infrared radiation thermometer on this stage.
Film forming apparatus as described. 22. The film forming apparatus according to claim 21, wherein the set temperature of the substrate temperature adjustment chamber is maintained at a different temperature, lower or higher than that of the substrate temperature calibration stage and the vacuum film forming processing chamber for the substrate. . 23. The film forming apparatus according to claim 21 or 22, wherein said vacuum film forming processing chamber comprises sputtering film forming. 24. A step of placing a predetermined substrate to be subjected to a film forming process on a substrate temperature calibration stage and heating the substrate to a predetermined temperature, and then cooling the substrate to a predetermined temperature under vacuum to form a vacuum film on the substrate. A step of transporting the substrate to a stage in a processing chamber and controlling it to a predetermined first film formation set temperature to start film formation, and then setting the substrate temperature to a second set temperature higher than the first film formation set temperature. A step of forming a film to a predetermined thickness by controlling the
19. The film forming method using the film forming apparatus according to claim 18, further comprising the step of rapidly cooling the film to a temperature equal to or lower than the second film forming temperature after the film forming is completed. 25. A step of placing a predetermined substrate for film-forming treatment on a substrate temperature calibration stage and heating the substrate to a predetermined temperature, and then transporting the substrate to a substrate temperature adjustment stage and cooling it to a predetermined temperature. step, then a step of transporting the substrate to a stage in a vacuum film-forming processing chamber and starting the first film-forming at the first film-forming setting, and a step of once stopping the film-forming and lowering the substrate to the substrate temperature. A step of increasing the crystal grains of the film by transferring the film to a stage in a regulating chamber or another temperature regulating chamber and maintaining it at a second set temperature higher than the first film forming temperature for a certain period of time, and increasing the temperature of the substrate. A second film forming step in which a film is formed to a predetermined thickness by controlling a third film forming temperature higher than the second set temperature in the substrate temperature adjustment chamber, and a second film forming step in which the substrate is transferred to another substrate temperature adjustment stage. 22. The film forming method using the film forming apparatus according to claim 21, further comprising the step of rapidly cooling the film. 26. A substrate whose temperature is to be measured, an infrared radiation thermometer to measure the temperature of the substrate, and a surface opposite to the surface of the substrate whose temperature is to be measured by the infrared radiation thermometer.
A method for measuring the temperature of a substrate, wherein a mirror surface having a sufficient reflectance for the infrared wavelength to be measured is installed substantially perpendicular to the optical axis measured by the infrared radiation thermometer, and the temperature of the substrate is measured. [Claim 27] An infrared radiation thermometer that attempts to measure the temperature of a substrate to be subjected to heat treatment or cooling treatment, and an infrared radiation thermometer that has a sufficiently high measurement wavelength on the reflective side of the substrate. A method for controlling the temperature of a substrate, comprising a mirror surface having a reflectance and a heating or cooling means for performing the above treatment. 28. The method of controlling the temperature of a substrate according to claim 27, wherein the heating or cooling means controls the substrate to a predetermined temperature based on a measurement value from the infrared radiation thermometer. 29. The temperature control method according to claim 27, wherein the mirror surface can be moved to the optical axis of the infrared radiation thermometer on the reflective side of the base body as necessary. 30. The heat treatment means performs at least a first and a second heating, and after the first heating, measures the temperature of the substrate using the mirror surface and an infrared radiation thermometer. 30. The substrate temperature control method according to claim 27, further comprising means for setting the second heating condition so that a target heating temperature is obtained by the second heating. 31. The substrate temperature control method according to claims 27 to 30, characterized in that an object having a sufficiently low reflection at the measurement wavelength, contrary to the mirror surface, can be introduced into the place where the mirror surface is placed. Measuring method.