JP3244463B2 - Vacuum processing apparatus, film forming apparatus and film forming method using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum processing apparatus for performing various processes on a substrate in a vacuum, a film forming apparatus and a film forming method using the same, and more particularly to a semiconductor device manufacturing process. More particularly, the present invention relates to a vacuum processing apparatus, a film forming apparatus and a film forming method using the same.

[0002]

2. Description of the Related Art In a process apparatus used for manufacturing a semiconductor device, it is important to accurately control a process temperature in order to realize a well-controlled reaction or the like. A representative example of a process apparatus in which the temperature is the most important setting condition is a so-called furnace such as an oxidation furnace. The inside of this kind of furnace is an oxidizing atmosphere replaced with the atmosphere. In this case, the replacement atmosphere is at or above atmospheric pressure, and for example, a silicon wafer in the furnace body is heated by radiation from a heater installed around a quartz tube and heat conduction by the atmospheric pressure atmosphere in the quartz tube. . That is, since there is a medium for conducting heat, the temperature can be measured relatively accurately using a measuring element such as a thermocouple installed in the heat conducting atmosphere.

Further, as an example in which a heat conductive medium is not used, a photoresist baking apparatus used in a step of applying a photoresist used as a mask in an etching step can be exemplified. In this apparatus, baking is performed in an atmospheric pressure atmosphere, but the silicon wafer is placed on a heat block having a larger heat capacity than a silicon wafer heated to a predetermined baking temperature, and the silicon wafer is further provided on the heat block side. The entire surface of the silicon wafer is pressed against the heat block by atmospheric pressure using a vacuum chuck. Therefore, the temperature of the wafer is balanced with the temperature of the heat block, so that the temperature of the wafer can be accurately controlled and managed by a temperature measuring element such as a thermocouple attached to the heat block. Many semiconductor manufacturing processes rely on highly pure materials and well-controlled reactions in a dust-free environment, often requiring processing in a vacuum.

Conventionally, accurate temperature control of a wafer in a vacuum in a semiconductor manufacturing apparatus has been essentially difficult for the following reasons.

That is, in the heating by the lamp heater, the wafer is heated only by radiation without a medium for transmitting heat, and therefore, as is well known, only a small absorption occurs on the metal mirror surface, and a large absorption occurs on the black body. Absorption occurs, and as a result, the degree of heating varies greatly depending on the surface condition of the heated wafer.

Attempts have been made to accurately measure the temperature of the wafer during the process by attaching a thermocouple to the wafer. However, in order to measure the temperature of the wafer while the thermocouple is in point contact with the wafer, the temperature of the thermocouple is measured. It is difficult to stabilize the contact state to a constant level, and the measurement temperature has a drawback of poor reproducibility.

When a wafer is heated by infrared radiation, since the wafer is almost transparent in a wide range of the infrared region, heat is not transmitted to the thermocouple only by conduction from the wafer, but the thermocouple itself is heated. In some cases, the wafer may be heated by a lamp heater, and it is difficult to accurately measure the temperature of the wafer.

There is also a method of forcibly bringing a conductive medium into a vacuum. For example, as described in JP-A-56-48132 or JP-A-58-213434, a silicon wafer is clamped to a heat block set in a vacuum atmosphere, and the back surface of the silicon wafer is connected to the heat block. By filling the gas with a pressure of about 1 Torr in between, the temperature of the wafer is equilibrated with the temperature of the heat block. Also in this case, the temperature of the wafer can be controlled and managed by a temperature measuring element such as a thermocouple attached to the heat block.

However, in this example, since the wafer is clamped to the heat block with a small force as compared with the use of a vacuum chuck under atmospheric pressure, the uniformity and reproducibility of the temperature are not sufficient. The biggest disadvantage is that the heat transfer medium to the wafer takes time due to the low density of the heat transfer medium. Eventually, even if the heat block and the wafer reach thermal equilibrium, it takes several seconds to several tens of seconds as described in the above example,
Further, it is considered that various factors influence the reproducibility of the heat conduction time.

As described above, whichever heating means is used, the temperature of the wafer must be measured in a non-contact manner in a vacuum. As one of the methods, there has been proposed a method of measuring a radiation intensity from a wafer in an infrared region using an infrared thermometer.

That is, in this method, a wafer is placed on a heat stage and heated in a sputtering apparatus.
The temperature of the wafer is measured by an infrared thermometer through a through hole formed in a target placed opposite to the wafer. In other words, the infrared emissivity of the wafer at a specific temperature is measured in advance with the calibration sample, and the wafer temperature during sputtering is controlled based on the measured value.

[0012] Japanese Patent Application Laid-Open No. 1-129966 can be cited as one related to this kind of technology.

[0013]

However, in this method, since the emissivity of the wafer is not always constant as described below, it is difficult to accurately measure the temperature, and there are some problems. That is, the same metal as the target material is used for the calibration sample,
For example, a silicon wafer on which aluminum is deposited by several hundred degrees is used, but the infrared emissivity from the wafer surface varies depending on the presence or absence of a metal film on the surface to be observed by an infrared thermometer of the wafer. Can not do. When a metal film is formed, a mirror surface is formed.
The emissivity is very low, making measurement difficult.
In some cases.

Further, even after the start of film formation, accurate temperature measurement cannot be performed until a film is formed to a certain thickness (for example, 500 to 1000 ° of aluminum).

In order to accurately measure the temperature of a wafer in a vacuum and to control the temperature associated therewith, even if a wafer on which the same metal film is formed has a difference in infrared emissivity depending on the product lot, calibration is performed as in this example. In a method in which a separate wafer is prepared, accurate temperature control cannot be performed because the wafer is not a wafer on which a film is actually formed.

As described above, in the vacuum processing apparatus conventionally used, various temperature control means are used, but none of them can accurately control the temperature of the process.

In other words, the ideal method of controlling the temperature of a wafer using an infrared thermometer is to calibrate the infrared thermometer using the wafer itself on which the film is actually formed, and to detect infrared radiation based on the presence or absence of the film and its state. This is a method that can be measured without being affected by the difference in rate. However, there has not yet been proposed any practical one.

Accordingly, an object of the present invention is to solve the above-mentioned conventional problems, and a first object of the present invention is to provide an improved vacuum processing system capable of accurately measuring and controlling the temperature of a substrate in a vacuum. The second object is to apply this vacuum processing apparatus, for example, a sputtering apparatus or a CVD (Chemical V).
It is an object of the present invention to provide a film forming apparatus such as an apor deposition apparatus, and a third object of the present invention is to provide a film forming method using the improved film forming apparatus.

[0019]

Means for Solving the Problems In order to achieve the above object, the present inventors have conducted studies as described in detail below and obtained various findings. That is, in the present invention, calibration is performed for each substrate (for example, a silicon wafer) in order to use the infrared radiation thermometer as a main temperature measurement unit. Specifically, before processing the substrate by the target vacuum processing apparatus ,
Each time, heating or cooling is performed to a known temperature, and the temperature of the base is measured by a first infrared radiation thermometer at one or more points. From the indicated value of the first infrared radiation thermometer obtained at this time, the infrared radiation thermometer in the vacuum processing chamber is corrected after the temperature calibration stage .
Specifically, the infrared radiation thermometer after the temperature calibration stage is calibrated by knowing this correction value in advance and using, for example, a coarse correction or a simple coefficient if the correction is performed in a narrow temperature range. When there are a plurality of temperature calibration points, there is a method of taking in the respective temperature calibration data into a computer and performing a calculation for correction.

The above-mentioned temperature calibration stage is not limited to a vacuum and may be in an environment of atmospheric pressure. Under atmospheric pressure environment, not only the device structure is generally simplified, but also
The temperature of the target wafer can be more easily brought close to the temperature of the heat block (stage) heated or cooled to a known temperature.

Specifically, when the temperature calibration stage is set at atmospheric pressure, it is possible to use a vacuum chuck for the stage to bring the substrate into close contact with a heat block having a larger heat capacity than the substrate. By doing so, the temperature of the substrate can be brought closer to the heat block temperature more accurately and in a short time. Temperature calibration section
Need not be provided close to the so-called sputtering device body.
Also, there is no need to incorporate it into the sputtering apparatus body.

[0022] When the need to take high temperature of the calibration point as described above, depending on the atmosphere than problems such as the surface of the substrate of interest is oxidized occurs, temperature calibration stearate
It is more preferable that the atmosphere of the chamber having the gaseous atmosphere be an atmosphere replacing the atmosphere, for example, a nitrogen or argon atmosphere.

When the temperature calibration stage is set in a vacuum, in order to improve the heat conduction between the heat block and the base as described above, heating or cooling gas is applied between the two at a pressure of 5 Pascal or more. By interposing as a conductive medium, the substrate temperature approaches the heat block in a relatively short time.

For example, in an apparatus for forming a thin film on a substrate by a sputtering method, when the substrate in the atmosphere is taken into a vacuum processing tank, moisture adsorbed on the surface of the substrate is sufficiently removed. For this reason, it is necessary to heat the substrate to 150 ° C. or higher, and conversely, it is necessary to lower the temperature of the already heated substrate in the vacuum chamber to the film formation start temperature. is there. In the case of temperature rise and temperature decrease, accurate temperature measurement is required every time temperature control is performed.
It is necessary to calibrate the infrared radiation thermometer for measuring these temperatures in advance for each substrate. That is heated to a substrate in advance to a known temperature before performing the predetermined vacuum processing was cooled, such as by measuring the substrate temperature by the first infrared radiation thermometer, vacuum the subsequent process based on the measurement result A function capable of calibrating one or more second infrared radiation thermometers used in the process,
If a film forming apparatus, such as a sputtering apparatus or a CVD apparatus, that needs to accurately control the temperature of the substrate is configured, a process more suitable for electronic components can be realized.

The measurement by the first and second infrared radiation thermometers described above can be performed at the same wavelength in the infrared region, thereby enabling more accurate calibration. When the above-mentioned calibration of the first infrared radiation thermometer at the known temperature is performed on the heated substrate, if the heating operation to the known temperature is performed in a vacuum, so-called baking for removing moisture adsorbed on the substrate is performed. Since the processing can be shared, the scale of the apparatus can be reduced, which is preferable in some cases.

For example, when raising the temperature of a substrate in a vacuum processing chamber of a sputtering apparatus, radiation heating by a lamp can be performed instead of using a heat block if an infrared radiation thermometer is calibrated in advance. A cheaper sputtering apparatus can be configured.

When heating with a lamp is used in a vacuum processing chamber, since the light of the lamp may enter the infrared radiation thermometer as stray light, the wavelength measured by the infrared radiation thermometer is different from the wavelength radiated by the lamp. It is essentially preferred that the wavelength is within the specified wavelength range.

When a silicon wafer is used as the substrate, for example, the silicon wafer is almost transparent in the infrared region, so that a quartz glass-containing infrared lamp generally used cannot be heated with high efficiency . As a lamp
It is more preferable to use a silicon wafer having a short wavelength having a high absorption efficiency.

If the temperature for starting film formation on the substrate in the vacuum processing chamber is lower than the baking heating temperature in vacuum for removing adsorbed moisture from the substrate, the baking is performed. Then, the substrate must be cooled to a predetermined temperature in a vacuum chamber and the substrate must be adjusted to a predetermined film formation start temperature. In order to realize such a film forming process with high accuracy, a stage provided with a first infrared radiation thermometer for performing temperature calibration of a second radiation thermometer in a temperature calibration chamber, and a stage provided in a vacuum. A stage for baking the substrate,
Further, a stage for cooling to a temperature at which a predetermined film formation is started before the film formation is started, and a substrate temperature at the cooling stage is accurately calculated and calculated by using a correction value obtained by a first infrared radiation thermometer. A sputtering apparatus having a second infrared radiation thermometer capable of measuring the temperature is required.

When observing the substrate with an infrared radiation thermometer ,
Observation of the metal film surface shows that the emissivity is small as described above.
Measurement is difficult, so the surface opposite to the surface on which the metal film is
It is desirable to observe. For this purpose, it is necessary to provide a through-hole (opening window) for observation on the heating or cooling stage, but this may cause non-uniformity in the temperature distribution of the substrate. In this case, two stages in the same chamber
Divide and adjust so that both have the same temperature, that is, one heating or cooling stage does not have an opening window for substrate temperature observation with an infrared radiation thermometer, and the other temperature measurement stage Such non-uniformity can be reduced by providing an opening window and quickly transferring the substrate to the other stage after heating or cooling the substrate on one stage and measuring the temperature.

By providing a plurality of temperature calibration points, more accurate control of the process temperature becomes possible, but by providing a plurality of heating means or cooling means in the substrate temperature calibration chamber, calibration at a plurality of temperatures can be shortened. Can be done on time.

In the case of an apparatus for forming a metal film by sputtering, an infrared ray radiated on a surface opposite to the surface on which the metal film formed on the substrate is observed is reflected.
The presence or absence of different size of the radiation incident on the infrared radiation thermometer, but the apparent infrared emissivity is different, the following
Since the shutter described above almost reflects infrared rays radiated to the surface of the substrate opposite to the surface observed by the infrared radiation thermometer, the difference in apparent infrared emissivity before and after film formation can be significantly reduced. .

In the stage for heating or cooling the substrate, the substrate is close to the surface on the opposite side of the surface observed by the infrared radiation thermometer through the opening window of the stage and has a sufficient wavelength for the measurement wavelength of the infrared radiation thermometer. By disposing a shutter mechanism whose main surface is formed by a member which is a mirror surface, stray light penetrating the base and entering the infrared radiation thermometer can be blocked.

The present invention has been made on the basis of the above findings. The means for achieving the object will be specifically described below. A temperature calibration chamber including means for heating or cooling the substrate mounted on the stage to a known set temperature;
A first infrared radiation thermometer for measuring radiant heat of the substrate through an opening window provided on a stage in the temperature calibration chamber; and a radiant radiation based on a known temperature of the substrate from an output of the first infrared radiation thermometer. Means for determining a rate and calculating an infrared sensitivity correction value for correctly displaying the temperature of the substrate by the first infrared radiation thermometer; a stage on which the substrate exiting the temperature calibration chamber is mounted; A vacuum processing chamber comprising: means for heating or cooling the substrate to a predetermined temperature; and means for performing vacuum processing on the substrate;
A second infrared radiation thermometer for measuring radiant heat of the substrate through an opening window provided on a stage in the vacuum processing chamber; and an infrared sensitivity obtained in the temperature calibration chamber from an output of the second infrared radiation thermometer. Means for calculating the true temperature of the substrate placed in the vacuum processing chamber based on the correction value; and the temperature of the substrate obtained from the output of the second infrared radiation thermometer is used to calculate the predetermined temperature in the vacuum processing chamber. This is achieved by a vacuum processing apparatus comprising: temperature control means for adjusting a temperature of an amount deviated from the temperature. And preferably, (2). A temperature calibration chamber including means for heating or cooling the substrate mounted on the stage to a known set temperature;
A first infrared radiation thermometer for measuring radiant heat of the substrate through an opening window provided on a stage in the temperature calibration chamber; and a radiant radiation based on a known temperature of the substrate from an output of the first infrared radiation thermometer. Means for determining a rate and calculating an infrared sensitivity correction value for correctly displaying the temperature of the substrate by the first infrared radiation thermometer; a stage on which the substrate exiting the temperature calibration chamber is mounted; A vacuum processing chamber comprising: means for heating or cooling the substrate to a predetermined temperature; and means for performing vacuum processing on the substrate;
A second infrared radiation thermometer for measuring radiant heat of the substrate through an opening window provided on a stage in the vacuum processing chamber; and an infrared sensitivity obtained in the temperature calibration chamber from an output of the second infrared radiation thermometer. Means for calculating the true temperature of the substrate placed in the vacuum processing chamber based on the correction value; and the temperature of the substrate obtained from the output of the second infrared radiation thermometer is used to calculate the predetermined temperature in the vacuum processing chamber. Temperature control means for adjusting a temperature deviated from the temperature; a member which is disposed close to the substrate in each of the chambers and which is sufficiently mirrored with respect to the measurement wavelength of the infrared thermometer; This is achieved by a vacuum processing apparatus comprising a shutter mechanism configured as described above.

More preferably, the following (3) to
This is also achieved by the vacuum processing apparatus described in (12).
That is, (3). The first and second infrared radiation thermometers are each configured to perform measurement at the same wavelength in the infrared region by the vacuum processing apparatus according to the above (1) or (2), and (4) . A means for heating or cooling the substrate in the temperature calibration chamber to a known predetermined temperature is provided outside the vacuum processing chamber by the vacuum processing apparatus according to the above (1) or (2). ). The means for heating or cooling the substrate in the temperature calibration chamber to a known predetermined temperature is provided by the vacuum processing apparatus according to any one of the above (1) to (4), which is configured to be present in a replacement atmosphere with the atmosphere. (6). The means for heating or cooling the temperature of the substrate in the temperature calibration chamber to a known predetermined temperature includes means for thermally contacting the substrate with a member having a larger heat capacity than the substrate. 5) The vacuum processing apparatus according to any of the above, and (7). The means for thermally bringing the base into contact with a member having a larger heat capacity than the base has means for evacuating a space where the base and the member come into contact with each other by the vacuum processing apparatus according to the above (6). And (8). Means for heating or cooling the temperature of the substrate in the temperature calibration chamber to a known predetermined temperature is in the vacuum processing chamber, and means for thermally contacting the substrate with a member having a larger heat capacity than the substrate; (9). The vacuum processing apparatus according to any one of (1) to (3) above, wherein a means for sealing a gas having a pressure of 5 Pascal or more is provided in a space where A substrate temperature adjustment chamber is provided between the substrate temperature calibration chamber and the vacuum processing chamber. In the chamber, a first temperature control stage of the substrate and a first optically connected through an opening window of the stage are provided. The vacuum processing apparatus according to the above (1) or (2), comprising the second and third infrared radiation thermometers; and (10). At least a stage on which the substrate in the vacuum processing chamber is mounted is a first stage provided with means for heating or cooling the substrate to a predetermined temperature, and a second stage provided with an opening window for temperature measurement. Any one of the above (1) to (9), comprising means for setting the temperature of the substrate in the first stage, and then moving the substrate to the second stage to measure the temperature. (11). At least one of the means for heating the substrate in the vacuum processing chamber is a vacuum processing apparatus according to any one of the above (1) to (9), which comprises a lamp heating means; and (12). At least one of the means for heating or cooling the substrate in the temperature calibration chamber is provided on the stage, and a second heating or cooling means is provided near the upper surface of the substrate, and the substrate is temperature-controlled from both surfaces. This is achieved by the vacuum processing apparatus according to any one of the above (1) to (9).

The second object is (13). A temperature calibration chamber provided with means for heating or cooling a substrate mounted on a stage to a known set temperature; and a first infrared ray for measuring radiant heat of the substrate through an opening window provided on a stage in the temperature calibration chamber. A radiation thermometer; an infrared ray for obtaining an emissivity based on a known temperature of the substrate from an output of the first infrared radiation thermometer, and displaying the temperature of the substrate correctly by the first infrared radiation thermometer. Means for calculating a sensitivity correction value; a stage on which a substrate that has exited the temperature calibration chamber is mounted; means for heating or cooling the substrate to a predetermined set temperature; and means for performing vacuum film formation on the substrate. A vacuum film formation processing chamber provided with; a second infrared radiation thermometer for measuring radiant heat of the substrate through an opening window provided on a stage in the vacuum film formation processing chamber; Means for calculating the true temperature of the substrate placed in the vacuum film forming chamber based on the infrared sensitivity correction value obtained in the temperature calibration chamber from the output of the second infrared radiation thermometer; Temperature control means for adjusting the temperature by which the temperature of the substrate obtained from the output of the thermometer deviates from the predetermined set temperature in the vacuum film forming process chamber; This is achieved by a film forming apparatus provided with a shutter mechanism which is provided and whose main surface is formed of a member which is sufficiently mirror surface with respect to the measurement wavelength of the infrared thermometer.

More specifically, preferably, (14). The sputtering film forming apparatus according to the above (13), wherein the vacuum film forming processing chamber is constituted by a vacuum film forming processing chamber capable of forming a thin film under predetermined conditions by a sputtering method; and (15). This is achieved by the CVD film forming apparatus described in (13), wherein the vacuum film forming processing chamber is constituted by a vacuum film forming processing chamber capable of forming a thin film under predetermined conditions by a CVD method. (16). A substrate temperature adjustment chamber was provided between the substrate temperature calibration chamber and the vacuum film formation processing chamber, and the chamber was optically connected to a temperature control stage of the substrate and an opening window of the stage. (17) The film forming apparatus according to the above (13), comprising: an infrared radiation thermometer; The film forming apparatus according to the above (16), wherein the set temperature of the substrate temperature adjusting chamber is maintained at a different temperature lower or higher than that of the substrate temperature calibration chamber and the vacuum film forming processing chamber for the substrate, and (18). This is achieved by the film forming apparatus according to the above (16) or (17), wherein the vacuum film forming processing chamber comprises a sputtering film forming chamber.

The third object is as described in (19). A step of placing a predetermined substrate for performing a film forming process on a stage in a substrate temperature calibration chamber and heating the substrate to a predetermined temperature, and then cooling the substrate to a predetermined temperature under vacuum to form a substrate in a vacuum film forming chamber Transporting the substrate to an internal stage and controlling the temperature to a predetermined first film forming set temperature to start film forming, and then controlling the substrate temperature to a second set temperature higher than the first film forming set temperature And forming a film to a predetermined thickness, and after the film formation,
A step of rapidly cooling the film to a temperature equal to or lower than the first film forming set temperature; A step of placing a predetermined substrate for performing a film forming process on a stage in a substrate temperature calibration chamber and heating the substrate to a predetermined temperature, and then transporting the substrate to a stage in the substrate temperature adjustment chamber to reach a predetermined temperature. Cooling, and then transporting the substrate to a stage in a vacuum film forming chamber to control the temperature of the substrate to a first film forming temperature higher than a set temperature in the substrate temperature adjusting chamber; A step of starting the film, temporarily stopping the film formation, transferring the substrate to a stage in the substrate temperature adjustment chamber or another stage in the temperature adjustment chamber, and setting the substrate to a second set temperature higher than the first film formation temperature. A step of increasing the grain size of the film by holding for a certain time,
Next, the substrate is returned to the stage in the vacuum film forming process chamber, and the temperature of the substrate is controlled to a third film forming temperature higher than the second set temperature in the substrate temperature adjusting chamber to form a predetermined film thickness. This is achieved by a film forming method using the film forming apparatus according to the above (16), comprising a second film forming step of forming a film, and a step of returning the substrate to the substrate temperature adjusting chamber again and rapidly cooling the substrate. You.

The first object is (21). Hand to heat or cool the substrate to a known temperature
A step, a first radiation thermometer for measuring radiation heat of the substrate,
A temperature calibration stage having the relative said base, the desired
Measuring the radiant heat of the substrate during the process of
Processing stage provided with a thermometer, and temperature calculating means for the base
A processing device comprising:
Is based on a known temperature from the output of the first radiation thermometer.
Means for calculating and storing the emissivity of the substrate,
The output of the second radiation thermometer is compared with the radiation of the pre-acquired substrate.
Correct based on the emissivity to calculate the true temperature of the substrate
The substrate processing apparatus comprising a means, also, (22). Measurement wavelength of radiation thermometer on temperature calibration stage
A member that substantially forms a mirror surface with respect to the thermometer
Closer to the surface opposite to the surface of the substrate observed
(21) The substrate according to the above (21), further comprising:
This is achieved by a processing device.

[0040]

[Action] Before performing predetermined processing on a substrate in a vacuum processing chamber, in the temperature calibration stage, the first infrared radiation thermometer is heated or cooled substrate to a known temperature c
Measure the radiation intensity from the wafer and use a thermocouple to measure the temperature of the substrate.
The stage temperature equilibrated with the temperature is measured, and the correction value of the infrared radiation thermometer or the emissivity is calculated based on the measurement result. Based on the calculation result, the temperature of the substrate in the subsequent vacuum processing chamber is accurately measured by the second and third thermometers. Then, based on the measurement result, the temperature control system is operated to set the temperature of the substrate in the vacuum processing chamber to a predetermined value, and the vacuum processing such as the film forming processing is performed in an accurately controlled temperature state.

In the temperature calibration stage , the first
By measuring the calibration temperature with the infrared radiation thermometer and the thermocouple at different temperatures, it is possible to control the process temperature in a wide temperature range when controlling the temperature of the substrate in the vacuum processing chamber thereafter. Will be possible.

Further, by providing a plurality of means as a heating means or a cooling means for measuring the calibration temperature using the first infrared radiation thermometer and the thermocouple described above, calibration at a plurality of different temperatures can be performed in a shorter time. It can be carried out.

In order to observe the substrate with an infrared radiation thermometer while heating or cooling the substrate, it is necessary to provide a through-hole (opening window) in the heating or cooling stage. Non-uniformity in distribution may occur. Therefore, as a countermeasure, it is possible to heat both the front and back surfaces of the base. However, two stages are used , and one stage for heating or cooling the substrate is not provided with an opening window, and is a stage dedicated to temperature control. The temperature measurement stage may be provided with an opening window, and the temperature may be measured by moving the substrate from one stage to the other stage when measuring the temperature.

In the present invention, arranging the shutter close to the substrate when measuring the temperature of the substrate plays a very important role in accurately measuring the temperature of the substrate. The first role is that in the case of an apparatus for forming a metal film by sputtering or CVD, the same infrared emissivity as the metal film is formed by this shutter is used regardless of the presence or absence of the metal film. it is possible to obtain the difference in infrared radiation rate of apparent before and after formation of the can and corrected child lies to permit correct temperature control of the substrate based on the accurate temperature measurement, the second role , Thereby improving the intensity of infrared radiation
Therefore, it is to improve the measurement accuracy, and thirdly, stray light penetrating the base and entering the infrared radiation thermometer is blocked,
It is to prevent a measurement error due to stray light .

[0045] Note that the other effects that could not be explained here, specifically described in the Examples section.

[0046]

An embodiment of the present invention will be described below with reference to the drawings.

Embodiment 1 FIG. 1 is a schematic configuration diagram showing an embodiment in which the vacuum processing apparatus of the present invention is applied to a sputtering film forming apparatus. In this embodiment, an example in which a silicon wafer is used as a substrate to be formed and an Al thin film is formed thereon by sputtering will be described as a typical example.

The vacuum processing apparatus 1 of the present invention comprises a substrate temperature calibration chamber 2 having a substrate temperature calibration stage 5, a substrate temperature adjustment chamber 3 having a substrate temperature adjustment stage 6 for heating and cooling the substrate, It comprises three chambers: a stage 7, an Al target 8, and a sputter deposition chamber 4 having a sputter electrode 9. These chambers are respectively gate valves GV1 and GV
Connected and independent by V2. Further, an exhaust system is connected to the substrate temperature calibration chamber 2 and the sputter film formation chamber 4, and on the other hand, a predetermined vacuum state can be maintained, and on the other hand, a predetermined gas is introduced from a gas inlet to perform the substrate temperature calibration chamber. 2 is set to an atmospheric pressure by introducing air or nitrogen gas, and the sputter deposition chamber 4 is configured to be set to an environment in which plasma is generated by introducing a sputter gas and generating a predetermined discharge. Further, each stage is provided with a heating and cooling means as described later, and an opening window 19 formed of a through-hole for observing radiant infrared rays from the base 10 is provided. First, second and third infrared radiation thermometers 11, 14 and 1 optically coupled through 19
5 is connected. The substrate temperature calibration stage 5 is provided with a thermocouple 12 for accurately measuring the temperature of the substrate temperature calibration stage 5. Then, the output from the first infrared radiation thermometer 11 and the output from the thermocouple 12 are input,
An infrared sensitivity correction value (emissivity) is calculated, and the second and third infrared radiation thermometers 14 and 1 are calculated based on the calculation result.
5, the correct temperature of the substrate 10 on each stage is measured, and finally, a command to set a predetermined stage temperature based on these measurement data is fed back to the heating and cooling means of each stage. A substrate temperature controller 13 is provided for setting and controlling the temperature of the stage to a predetermined value, that is, for managing the temperature of the so-called vacuum processing apparatus as a whole.

[0049] When the described functions of each chamber, the substrate temperature calibration chamber is usually infrared radiation strength of from the substrate 10 which is set to a known temperature above the start of film formation temperature first infrared pyrometer Measurement is performed at step 11, the emissivity is calculated, and the infrared radiation thermometer is calibrated. The substrate temperature adjustment chamber 3 has a temperature adjustment function before transferring the substrate to the next sputter deposition chamber 4, and the sputter deposition chamber 4 has a function of forming a film on the substrate by sputtering.

In the following, the temperature of each stage is controlled to
A specific example in which an Al thin film is sputter-deposited on the silicon wafer substrate 10 from the Al target 8 while maintaining 0 at a predetermined temperature will be described.

First, in the substrate temperature calibration chamber 2 placed under the atmospheric pressure, the wafer 10 is heated stepwise on the calibration stage 5 to three temperature points of 200 ° C., 300 ° C., and 400 ° C. In addition, heating at these stages 5, 6, and 7,
The cooling method will be described later.

The substrate 1 heated on the calibration stage 5
0 is connected to the first infrared radiation thermometer 11 and the thermocouple 12.
Observation and measurement are performed, and the arithmetic processing unit of the substrate temperature controller 13 obtains the indicated value of the temperature at each temperature stage. That is, the thermocouple 12
In actually measuring the temperature of the calibration stage which is the substrate temperature and the equilibrium, the emissivity at that time was observed by infrared radiation thermometer 11 and the temperature as the substrate temperature, the arithmetic processing unit of the substrate temperature controller 13 Obtain an indication of temperature based on emissivity.

Since the temperature of the wafer 10 is set in advance to a known temperature, the emissivity obtained from the first infrared radiation thermometer 11 can be calculated by back calculation. The processing temperatures of the temperature adjustment chamber 3 and the sputter deposition chamber 4 are determined by using this emissivity.
The emissivity is corrected and read from the third infrared radiation thermometers 14 and 15.

When the emissivity calibration by the first infrared radiation thermometer 11 is completed, the inside of the substrate temperature calibration chamber 2 is evacuated to a vacuum state, and then the wafer 10 is opened by opening the gate valve GV1 to open the calibration chamber. 2 is transferred to a substrate temperature adjusting chamber 3 under vacuum, and is transferred to a second infrared radiation thermometer 1.
4, the temperature is measured. From the measurement result, the temperature of the stage 6 is adjusted by the substrate temperature controller 13 and the wafer 1 is adjusted.
Adjust the temperature of 0 to any temperature. In this example, 100
Set to ° C. Thereafter, the wafer 10 is moved to the gate valve G.
V2 is opened, transported to the stage 7 of the sputtering film formation chamber 4 in a vacuum state, measured by the third infrared radiation thermometer 15, and based on the result, the temperature of the stage 7 is adjusted to an arbitrary temperature. The temperature of the base 10 is controlled to an arbitrary temperature to form a sputter film. In this example, the temperature was set to 250 ° C. to form an Al sputter film. After the sputter deposition, the wafer 10 was transferred to the calibration chamber 2 again, and the emissivity was re-calibrated, and the emissivity was used for correction in the temperature measurement during the subsequent sputter deposition. As a simple means for transferring between the chambers, for example, a transfer mechanism using a heat-resistant belt such as silicone rubber , a robot, or the like is used.

Next, the outline of the structure of the stage on which the substrate is placed, the method of heating and cooling, and the method of measuring the emissivity of the wafer will be described with reference to FIG.

(1) Structure of Substrate Stage and Method of Heating and Cooling: The sputter stage 7 has a built-in electric heater 18 for heating the stage and transfers heat to the wafer in a vacuum, for example, air or nitrogen gas. The structure has a structure in which the heat transfer gas flows, and a clamp 17 for uniformly bringing the heat transfer gas into contact with the wafer is provided. Further, there is provided an opening window 19 constituting a radiation observation cavity for measuring the temperature of the wafer with the infrared radiation thermometer 15. To cool the wafer, although not shown, a cooling medium such as freon is circulated instead of the heater 18 to cool the stage, and the wafer is cooled by the heat transfer gas in the same manner as described above.

In the calibration stage 5, since the inside of the chamber is at atmospheric pressure, vacuum evacuation is performed without using a heat transfer gas, and heat transfer is performed by heat conduction while maintaining close contact with the stage by a vacuum chuck. .

(2) Measurement of Emissivity: Next, a method of measuring the temperature of the wafer base by using an infrared radiation thermometer will be described. In this embodiment, the infrared radiation thermometer 1
1, 14 and 15 are installed at the lower part of each stage, and the temperature on the back side of the wafer is set. The stray light blocking cylinders 16 are set so that stray light from inside each chamber does not enter the infrared thermometer. It is provided between the stage and the infrared radiation thermometer.

In this embodiment, the treatment in a vacuum is the formation of Al on a substrate by sputtering. When the substrate receives the Al metal film, the emissivity is greatly increased by the amount reflected from the Al film. Therefore, the substrate temperature calibration stay
The emissivity obtained by measuring the film forming process in the above becomes unusable by the subsequent film forming process.

In the present invention, the wafer on which the film forming process has been completed is heated again to a preset known temperature in the calibration chamber, the emissivity is measured again on a new surface, and the calibration is performed again. Thus, for example, the wafer temperature immediately after the film formation can be correctly measured by measuring the wafer immediately after the film formation by an infrared radiation thermometer and calculating the correct emissivity by the (second) emissivity measurement after the film formation. It is possible to know.

For example, if the temperature of the wafer immediately after the film formation is too high, the setting of the heating conditions is changed so as to reduce the amount of substrate heating performed during or before the film formation.

If it is desired to lower the temperature immediately after the end of the film formation without changing the set temperature at the start of the film formation, the gas is cooled on the substrate stage and the gas pressure on the back surface of the substrate is adjusted. The setting of substrate cooling during film formation can be changed during film formation.

In the above embodiment, an example was shown in which a silicon wafer was used as a substrate and an Al thin film was formed on the back surface by sputtering. However, since the temperature of the substrate could be controlled with high precision via a stage, reproducibility within the wafer was obtained. However, good crystallinity was obtained, and high-quality film formation was achieved.

Example 2 When a metal film is formed on the opposite side of the substrate 10 observed by an infrared radiation thermometer, the value of the apparent infrared emissivity may vary greatly depending on the presence or absence of the film. FIG. 3 shows an example in which a second temperature calibration chamber 32 is added to the sputter film formation chamber 4 of FIG. 1 to calibrate the infrared emissivity of the substrate after film formation in the sputtering apparatus for such a purpose. It is shown.

During the film formation by sputtering, the temperature of the substrate is measured by the infrared radiation thermometer 15. However, in this case, since the metal film has already been formed on the surface of the base 10, the correction value of the infrared emissivity obtained in the base temperature calibration stage 2 cannot be used. For this purpose, after the sputter deposition, the substrate 10 is transferred from the sputter deposition chamber 4 to the second temperature calibration chamber 32, and heated or cooled to a predetermined temperature by the heating or cooling stage 33 similarly to the temperature calibration chamber 2, Infrared radiation thermometer 3
The temperature is measured by the thermocouple 4 and the thermocouple 35, and the infrared emissivity of the substrate 10 after film formation at a predetermined temperature is calculated from the indicated values of both. By correcting the temperature data obtained during the film formation with this value, the temperature of the substrate during the film formation can be accurately obtained. If the temperature of the substrate 10 during the film formation obtained in this way is higher than a predetermined value, the heating means or the cooling means of the substrate temperature adjusting chamber 3 is appropriately adjusted in order to appropriately adjust the temperature of the substrate. By applying the feedback, it is possible to appropriately perform a film forming process on the next substrate.

The temperature calibration chamber for calibrating the infrared emissivity of the substrate after film formation is not necessarily the temperature calibration chamber 2 for calibrating the infrared emissivity of the substrate before film formation as in this example. There is no need to prepare them separately. That is, after forming a film in the sputtering film forming chamber 4, the substrate is again transferred to the temperature calibration chamber 2 through the substrate temperature adjusting chamber 3.
Then, the infrared ray emissivity may be calibrated in the same manner as in the second temperature calibration chamber 32.

<Embodiment 3> In Embodiments 1 and 2 described above, the emissivity of the substrate changes when the substrate is formed into a film, so that it is necessary to perform the calibration of the emissivity again. This point is improved, and the correction of the infrared radiation thermometer can be performed by using the emissivity as a reference in the subsequent film forming process by one-time emissivity calibration.

In this embodiment, as in the first embodiment, an example of an apparatus for forming a film of aluminum Al on a silicon wafer substrate by sputtering will be described.

FIG. 4 is a schematic diagram showing the structure of a sputtering apparatus, which is basically the same as that shown in FIG. 1, but in this example, as will be described in detail later, a substrate 10 mounted on each stage will be described. That is, the shutters 20, 21, and 22 are arranged close to each other.

The substrate 10 is first heated or cooled to a predetermined temperature by the heating or cooling stage 5 in the temperature calibration chamber 2, and the temperature is measured by the first infrared radiation thermometer 11 and the thermocouple 12, and the indicated values of both are measured. The infrared emissivity of the substrate 10 at a predetermined temperature is calculated from the following equation. When a metal film is formed by sputtering on the side of the substrate opposite to the side observed by the infrared thermometer, the apparent value of the infrared emissivity may vary greatly depending on the presence or absence of the film. The difference in apparent infrared emissivity due to the presence or absence can be reduced.

The measurement by the infrared radiation thermometer 11 is performed with the shutter 20 closed.

Next, the substrate 10 is transferred from the temperature calibration chamber 2 to the substrate temperature adjusting chamber 3, and the temperature of the substrate 10 is measured by the second infrared radiation thermometer 14 while heating or cooling on the heating or cooling stage 6. By adjusting the temperature of the heating or cooling stage 6 to a predetermined temperature through the substrate temperature controller 13 by correcting the emissivity of the substrate 10 at the predetermined temperature obtained in the calibration chamber 2, the temperature of the substrate 10 is controlled to a predetermined temperature. Control the temperature. The measurement is also performed on the thermometer side of the substrate temperature adjustment chamber 3 with the shutter 21 closed as in the case of the temperature calibration chamber 2.

After that, the substrate 10 is
And heated or cooled by the sputter stage 7. At this time, the shutter 22 is closed on the base, the temperature of the base 10 is measured by the third infrared radiation thermometer 15, and the correct temperature is known by correcting the emissivity of the base 10 obtained in the calibration chamber 2. Can be. Further, by knowing the correct temperature in this way, the substrate temperature controller 1
The temperature of the heating or cooling stage 7 is adjusted to a predetermined temperature through 3 and the temperature of the base 10 is controlled to a predetermined temperature to start sputtering film formation. Once the metal film is formed,
The temperature can be measured without using the heater 22. After the film formation is completed, the substrate 10 is returned to the substrate temperature adjustment chamber 3, and the temperature is measured by the second infrared radiation thermometer 14 while being heated or cooled by the stage 6. At this time, the temperature of the stage 6 is adjusted to a predetermined temperature through the substrate temperature controller 13 by correcting the emissivity of the substrate at the predetermined temperature obtained in the calibration chamber 2 to set the substrate temperature to the predetermined value. I do. Thereafter, the substrate is carried out of the vacuum processing apparatus 1 through the temperature calibration chamber 2 and proceeds to the next step.

The temperature of the substrate 10 is measured at a plurality of temperatures by the first infrared thermometer 11 and the thermocouple 12 in the substrate temperature calibration stage 2, and the second and third infrared radiation thermometers 14 and 15 are measured. Use allows for more accurate control of the process temperature. Although not shown, by providing a plurality of means for heating or cooling the substrate for measurement with the first infrared radiation thermometer 11 for substrate temperature calibration, the temperature of the substrate at a plurality of similar temperatures can be reduced. Calibration can be performed in a shorter time. Above is the temperature calibration incorporated in the sputtering equipment
Although it is described in the form of a hand, it is prepared completely separately as described above
It is also possible.

FIG. 5 shows a schematic configuration diagram of the sputtering stage 7 of FIG. 4 as a typical example of the stage. The configuration of the stage is basically the same as the example in FIG. 2, except that a shutter 22 is provided near the upper part of the base 10 in the present embodiment.

That is, when a metal film is formed by sputtering on the side of the substrate opposite to the side observed by the infrared thermometer,
The value of the apparent infrared emissivity may vary greatly depending on the presence or absence of the film, but since the installation of this shutter can reduce the difference in the apparent infrared emissivity due to the presence or absence of the film,
As shown in FIG. 3, the measurement by the infrared thermometer for temperature calibration does not need to be performed twice before and after the film formation by arranging the second temperature calibration chamber 32 or the like, so that only one measurement is required.

This shutter has an openable and closable mechanism that closes the surface of the substrate during temperature measurement and opens during film formation. For example, a stainless steel disk is supported on a rotatable drive shaft. It is configured to open and close by rotating a shaft.

Further, since the silicon wafer substrate 10 is almost transparent to infrared rays, stray light penetrates the substrate and enters the infrared radiation thermometer, which may lower the accuracy of measuring the temperature of the substrate. As a countermeasure, in this example, a shutter 22 whose main surface is formed by a member which is close to the base on the side opposite to the side observed by the infrared thermometer and which is sufficiently specular with respect to the measurement wavelength of the infrared radiation thermometer. During the temperature measurement of the base 10 by the infrared radiation thermometer 15, the stray light is blocked so as not to enter.

As described above, the role of the shutter mechanism is to firstly correct the increase in the apparent emissivity due to the radiation light from the wafer reflected by the metal film when the metal film is formed on the wafer substrate. , and the the second Thereby is to improve measurement accuracy by improving the infrared radiation intensity, the third is a blocking stray light.

FIG. 6 is a schematic configuration diagram of the stage 6 of FIG. 4, and has basically the same configuration as the stage 7 of FIG. The stage 6 has a built-in heater 18 and has a structure in which a heat transfer gas flows in a space between the stage 6 and the base 10 in a vacuum, and a clamp 17 for bringing the heat transfer gas into uniform contact with the base. is set up. Base 1
An opening window 19 for measuring a temperature of 0 with an infrared radiation thermometer 14 and a stray light blocking cylinder 16 are connected.
Window plates 23 and 24 made of a material that transmits infrared rays are attached to both ends of 6. Further, the cylinder 16 is heated and cooled by water so as not to become a source of stray light. In order to further reduce the influence of stray light, the inner wall of the cylinder 16 can be subjected to black body treatment after cooling . Also, in this example, a shutter 21 is provided close to the base 10 similarly to the case of FIG.

Note that the shutter has (1) infrared radiation
Specular infrared reflectance for measurement wavelength of thermometer
Ones, (2) may be any structure as long as it has a shutdown function of the stray light, structure, or the fixed shutter to a region of the chamber for opening and closing freely driven for example in synchronization with the temperature measurement timing of the base Various configurations such as a mechanism for moving the substrate to the lower part of the shutter at the time of measurement can be adopted.

FIG. 7 is a characteristic curve showing the difference in the infrared emissivity of the silicon wafer base with and without the shutter.
FIG. 7A is a comparative example without a shutter, and FIG.
4 shows the measurement results of the present example in which a shutter was provided. As apparent from this, the apparent infrared emissivity of the wafer before the aluminum Al film formation (without the Al film) in FIG.
Although the apparent infrared emissivity of the wafer after film formation (with an Al film) is smaller than the apparent infrared emissivity of the wafer, by installing a shutter on the wafer before the Al film formation, FIG.
As shown in (b), the apparent infrared emissivity was almost equal to that of the wafer after the Al film formation. Thus, it can be seen that by measuring the substrate temperature using the shutter, measurement can be performed at a constant emissivity.

Example 4 In the case where the temperature distribution of the substrate becomes uneven due to the opening window 19 for measuring the infrared temperature of the substrate on the heating or cooling stage, as shown in FIG. After the base 10 is heated or cooled by a stage 25 dedicated to heating or cooling separately provided at a location remote from the base 19, the base 10 is conveyed to a stage having an opening window 19 and the infrared radiation thermometer 2.
The temperature of the substrate 10 can be measured by the configuration of FIG.
Can be measured in a more uniform temperature distribution.

Embodiment 5 When heating or cooling of the substrate is performed only from one of the front surface and the rear surface, a temperature difference occurs between the front surface and the rear surface of the substrate. Therefore, as shown in FIG. 9, by providing heating or cooling means 28 and 29 on each side so that the temperature can be controlled from both the front and back sides of the base, the temperature difference between the two sides can be reduced. This can also reduce the non-uniformity of the temperature distribution on the substrate due to the opening window 19.

Example 6 A silicon wafer substrate 1 was formed using the sputtering apparatus 1 shown in FIG.
Another embodiment in which an aluminum Al film is formed on the substrate 0 by sputtering will be described.

The silicon wafer substrate 10 is heated to 500 ° C. in the temperature calibration chamber 2 to remove adsorbed moisture and the like, and the temperature is measured by the thermocouple 12 and the emissivity of the infrared radiation thermometer 11 is calibrated based on the temperature. Then, the wafer is transferred to the substrate temperature adjusting chamber 3. The wafer substrate 10 transported to the substrate temperature adjustment chamber 3 is measured by an infrared radiation thermometer 14, cooled to a predetermined 200 ° C. by controlling the temperature of the stage 6, and transported to the sputter deposition chamber 4. The substrate 10 is sputtered in the sputtering film forming chamber 4 according to a temperature profile as shown in FIG. Target 8 is 1% Si-3% Cu-
An Al composition was used. First, the temperature of the substrate 10 is controlled to 230 ° C., and the first
And then temporarily stop the sputtering,
The substrate is transferred to the substrate temperature adjusting chamber 3. In the substrate temperature adjusting chamber 3, the temperature of the substrate 10 is controlled to be heated to 300 ° C. to grow the crystal grains of the Al film obtained by the first sputter deposition to improve the orientation and the like.

Next, the substrate is again transported to the sputtering film forming chamber 4 and the substrate temperature is set to about 400 ° C.
The second sputter deposition is restarted, and the deposition is performed to a thickness of about 1 μm. As a result, the crystal grains are large and A
1 sputtered film is obtained. After the sputtering, the substrate is immediately transferred to the substrate temperature adjusting chamber 3 and rapidly cooled to about 50 ° C. Thereby, Si and C in the Al sputtered film are
It was possible to suppress the deposition of u.

In the above embodiment, an example was described in which a silicon wafer was used as a base and an Al thin film was formed on the surface by sputtering. However, since the temperature of the base could be controlled with high precision via a stage, the reproducibility in the wafer was high. Good crystallinity and
A fine structure of a thin film was obtained, and a high-quality film was formed. For example, when heating a thin film having a thickness of several hundred degrees at a heating temperature of 350 ° C. or higher, no improvement in crystallinity was obtained. Therefore, such a film forming method cannot be industrially realized without the present invention, which can know an accurate temperature.

[0089] The vacuum processing apparatus of the present invention, in addition to the CVD of the sputtering apparatus (Chemica l Vapor Deposi
It is needless to say that the present invention can be applied to a film forming apparatus or the like according to the above method.

For example, this is effective when a silicon wafer substrate is used as a base and a tungsten film is formed on the substrate by a known method by CVD.

In any of the film forming apparatuses of this type, the precision of controlling the temperature of the substrate affects the quality of the film to be formed. Therefore, the film forming apparatus of the present invention can sufficiently respond to such a problem.

Note that a film forming apparatus can be realized by using a vacuum processing chamber as a film forming processing chamber as in the above embodiment. However, this vacuum processing chamber can be replaced by a dry etching process such as plasma etching. And the temperature control of the substrate to be etched can be easily realized as in the above embodiment.

[0093]

As described above, according to the present invention, it is possible to accurately control the temperature of a substrate in a vacuum, and realize a vacuum processing apparatus capable of accurately controlling the temperature of a substrate. By applying it to a film forming apparatus, it is possible to easily control the temperature before and after the film formation that requires accurate temperature control, and during the film formation, so that a high quality film can be formed.

[Brief description of the drawings]

FIG. 1 is a schematic block diagram showing a partial cross-section of a vacuum processing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic cross-sectional configuration diagram illustrating an example of a sputtering stage.

FIG. 3 is a block diagram schematically showing a partial cross section of a vacuum processing apparatus according to another embodiment of the present invention.

FIG. 4 is a partial cross-sectional block diagram schematically illustrating a vacuum processing apparatus according to another embodiment of the present invention.

FIG. 5 is a schematic cross-sectional configuration diagram showing an example of a sputtering stage and a substrate temperature adjustment stage each provided with a shutter mechanism.

FIG. 6 is a schematic cross-sectional configuration diagram showing an example of a sputtering stage and a substrate temperature adjustment stage each provided with a shutter mechanism.

FIG. 7 is a characteristic curve diagram showing temperature measurement results depending on the presence or absence of a shutter.

FIG. 8 is a sectional view of a stage according to another embodiment of the present invention in which the stage is divided into two in the same chamber.

FIG. 9 is a sectional view of a stage in which temperature control means are provided on both surfaces of a base.

FIG. 10 is an explanatory diagram showing one temperature profile during film formation.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vacuum processing apparatus, 2 ... Substrate temperature calibration chamber, 3 ... Substrate temperature adjustment chamber, 4 ... Sputter deposition chamber, 5 ...
Base temperature calibration stage, 6 ... Base temperature adjustment stage, 7
... Sputter stage, 8 ... Target, 9 ... Sputter electrode, 10 ... Base, 11, 14, 15 ... Infrared radiation thermometer, 13 ... Base temperature controller, 16 ... Stray light blocking cylinder, 1
9: Open window, 20 to 22: Shutter, GV1, GV2 ...
Gate valve.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 21/31 H01L 21/302 A (72) Inventor Hideaki Shimamura 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Production technology, Hitachi, Ltd. In the laboratory (72) Inventor Susumu Tsutake Takeshi 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture In-house Research Institute of Hitachi, Ltd. Within the Technical Research Institute (72) Inventor Yuji Yoneoka 292, Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Within the Manufacturing Research Laboratory, Hitachi, Ltd. (56) References JP-A-1-129966 (JP, A) JP-A-1-141758 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) C23C 14/00-14/58 H01L 21/203 H01L 21/205 H01L 21/285 H01L 21/3065 H01L 21/31

Claims (21)

(57) [Claims] A temperature calibration stage provided with means for heating or cooling a substrate mounted on the stage to a known set temperature; a first infrared radiation thermometer for measuring radiant heat of the substrate; Means for calculating an emissivity from an output of an infrared radiation thermometer based on a known temperature of the substrate, and calculating an infrared sensitivity correction value for correctly displaying the temperature of the substrate by the first infrared radiation thermometer; A stage on which the same or different substrate as the stage is mounted, a means for heating or cooling the substrate to a predetermined set temperature,
A vacuum processing chamber having means for performing vacuum processing on the substrate; a second infrared radiation thermometer for measuring radiant heat of the substrate; and a temperature obtained from the output of the second infrared radiation thermometer in the temperature calibration chamber. Means for calculating the true temperature of the substrate placed in the vacuum processing chamber based on the infrared sensitivity correction value. 2. A temperature calibration stage provided with means for heating or cooling a substrate mounted on a stage to a known set temperature, a first infrared radiation thermometer for measuring radiation heat of the substrate; Means for calculating an emissivity from an output of an infrared radiation thermometer based on a known temperature of the substrate, and calculating an infrared sensitivity correction value for correctly displaying the temperature of the substrate by the first infrared radiation thermometer; A vacuum processing chamber including the stage on which the substrate is mounted or a stage different from the stage, a unit for heating or cooling the substrate to a predetermined temperature, and a unit for performing vacuum processing on the substrate; A second infrared radiation thermometer for measuring radiant heat of the substrate; and a vacuum processing chamber based on an infrared sensitivity correction value obtained in the temperature calibration chamber from an output of the second infrared radiation thermometer. Means for calculating the true temperature of the substrate placed therein; a member disposed proximate to the substrate on each of the stages and being sufficiently specular with respect to the wavelength measured by the infrared thermometer; A vacuum processing apparatus comprising: a shutter mechanism having a surface. 3. The first and second infrared radiation thermometers are:
3. The vacuum processing apparatus according to claim 1, wherein the measurement is performed at the same wavelength in the infrared region. 4. The vacuum processing apparatus according to claim 1, wherein means for heating or cooling the substrate on the temperature calibration stage to a known predetermined temperature is provided outside the vacuum processing chamber. 5. A means for heating or cooling the substrate on the temperature calibration stage known predetermined temperature, claims 1 to 4 any one consisting as present in the replacement atmosphere of air
The vacuum processing apparatus according to any one of the above. 6. The means for heating or cooling the temperature of the substrate on the temperature calibration stage to a known predetermined temperature comprises means for thermally contacting the substrate with a member having a larger heat capacity than the substrate. Item 6. A vacuum processing apparatus according to any one of Items 1 to 5. 7. The means for thermally contacting the base with a member having a larger heat capacity than the base comprises means for evacuating a space where the base and the member come into contact with each other.
The vacuum processing apparatus as described in the above. 8. A means for heating or cooling the temperature of the substrate on the temperature calibration stage to a known predetermined temperature is provided in a vacuum processing chamber, and means for thermally contacting the substrate with a member having a larger heat capacity than the substrate. 4. The vacuum processing apparatus according to claim 1, further comprising means for sealing a gas having a pressure of 5 Pascal or more in a space where the base and the member come into contact with each other. 9. A substrate temperature adjusting stage is provided between a substrate temperature calibration stage and a vacuum processing chamber, and the substrate temperature adjusting stage is provided with a third infrared radiation thermometer. The vacuum processing apparatus as described in the above. 10. A stage on which at least a substrate in the vacuum processing chamber is mounted is provided with a first stage provided with means for heating or cooling the substrate to a predetermined temperature, and a second stage for performing temperature measurement. 10. The vacuum according to claim 1, further comprising: means for setting the temperature of the substrate in the first stage, and then moving the substrate to the second stage to measure the temperature. Processing equipment. 11. At least one means for heating the substrate of the vacuum processing chamber is a vacuum processing apparatus according to any one of claims 1 to 9 consisting of lamp heating means. 12. The apparatus according to claim 12, wherein at least one of the means for heating or cooling the substrate on the temperature calibration stage is provided on the stage, and the second heating or cooling means is provided close to the upper surface of the substrate. vacuum processing device according to any one of claims 1 to 9 form was as temperature control from both the. 13. A temperature calibration stage having means for heating or cooling a substrate mounted on the stage to a known set temperature; a first infrared radiation thermometer for measuring radiant heat of the substrate on the stage; Determine the emissivity based on the known temperature of the substrate from the output of the first infrared radiation thermometer,
Means for calculating an infrared sensitivity correction value for correctly displaying the temperature of the substrate by the first infrared radiation thermometer; and a substrate which is the same as or different from the temperature calibration stage.
A stage on which the substrate is mounted, means for heating or cooling the substrate to a predetermined set temperature, and means for performing a vacuum film forming process on the substrate; and a vacuum film forming processing chamber; A second infrared radiation thermometer for measuring radiant heat of the substrate mounted on a stage; and a vacuum film forming process based on an infrared sensitivity correction value obtained in the temperature calibration stage from an output of the second infrared radiation thermometer. Means for calculating the true temperature of the substrate placed in the chamber; and the temperature of the substrate determined from the output of the second infrared radiation thermometer has deviated from the predetermined set temperature in the vacuum film forming chamber. Temperature control means for adjusting the temperature of the amount; a main surface of which is disposed close to the substrate in each of the chambers and which is sufficiently mirrored with respect to the measurement wavelength of the infrared thermometer; Shutter mechanism Film-forming apparatus comprising comprises a. 14. The sputtering film forming apparatus according to claim 13, wherein said vacuum film forming processing chamber is constituted by a vacuum film forming processing chamber capable of forming a thin film under predetermined conditions by a sputtering method. 15. The CVD film forming apparatus according to claim 13, wherein said vacuum film forming processing chamber is constituted by a vacuum film forming processing chamber capable of forming a thin film under predetermined conditions by a CVD method. 16. A substrate temperature adjustment stage is provided between the substrate temperature calibration stage and a vacuum film formation processing chamber,
14. The apparatus according to claim 13, further comprising a stage for adjusting the temperature of the substrate and an infrared radiation thermometer provided on the stage.
A film forming apparatus as described in the above. 17. The film forming apparatus according to claim 16, wherein the set temperature of the substrate temperature adjusting chamber is maintained at a different temperature lower or higher than the temperature of the substrate temperature calibration stage and the vacuum film forming processing chamber for the substrate. 18. The film forming apparatus according to claim 16, wherein said vacuum film forming processing chamber comprises a sputtering film forming chamber. 19. A step of mounting a predetermined substrate on which a film is to be formed on a substrate temperature calibration stage and heating the substrate to a predetermined temperature, and then cooling the substrate to a predetermined temperature under vacuum to form a substrate by vacuum film formation. Transporting the substrate to a stage in the processing chamber to start film formation at a predetermined first film formation set temperature, and then setting a substrate temperature to a second set temperature higher than the first film formation set temperature Controlling the film thickness to a predetermined thickness,
14. The film forming method according to claim 13, further comprising a step of rapidly cooling the film to a temperature equal to or lower than the second film forming set temperature after the film forming is completed. 20. A step of mounting a predetermined substrate for performing a film forming process on a substrate temperature calibration stage and heating the substrate to a predetermined temperature, and then transporting the substrate to a substrate temperature adjustment stage and cooling the substrate to a predetermined temperature. And then transporting the substrate to a stage in a vacuum deposition process chamber and at a first deposition temperature,
A step of initiating the first film formation and a step of temporarily stopping the film formation and moving the substrate to a stage in the substrate temperature adjustment chamber or another stage in the temperature adjustment chamber, and setting a second temperature higher than the first film formation temperature. And increasing the crystal grains of the film by maintaining the substrate at a predetermined temperature for a predetermined time, and controlling the temperature of the substrate to a third film forming temperature higher than a second temperature set in the substrate temperature adjusting chamber to thereby form a predetermined film. 17. The film forming method according to claim 16, comprising a second film forming step of forming a film to a thickness, and a step of rapidly cooling the substrate by another substrate temperature adjusting stage. 21. A temperature calibration stage comprising: means for heating or cooling a substrate to a known temperature; a first radiation thermometer for measuring radiant heat of the substrate;
During the desired processing, a processing stage comprising a second radiation thermometer for measuring the radiant heat of the substrate, and a processing device comprising a temperature calculating means of the substrate, wherein the temperature calculating means, Means for calculating and storing the emissivity of the substrate based on a known temperature from the output of the first radiation thermometer, and converting the output of the second radiation thermometer to the pre-acquired emissivity of the substrate. Means for calculating a true temperature of the substrate, and a member substantially constituting a mirror surface for the measurement wavelength of the radiation thermometer on the temperature calibration stage, A substrate processing apparatus comprising: means for installing the substrate in close proximity to a surface opposite to the surface of the substrate observed by a meter.