JPH1093149A - Thermoelectric converter - Google Patents
Thermoelectric converterInfo
- Publication number
- JPH1093149A JPH1093149A JP8241670A JP24167096A JPH1093149A JP H1093149 A JPH1093149 A JP H1093149A JP 8241670 A JP8241670 A JP 8241670A JP 24167096 A JP24167096 A JP 24167096A JP H1093149 A JPH1093149 A JP H1093149A
- Authority
- JP
- Japan
- Prior art keywords
- heat exchanger
- heat
- electrode
- conversion device
- exchangers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電気を熱に変換す
る熱電変換装置に関する。The present invention relates to a thermoelectric converter for converting electricity into heat.
【0002】[0002]
【従来の技術】従来よりこの種の熱電変換装置として、
実開昭62ー178554号に開示されるような、ペル
チェ効果を利用したものがある。2. Description of the Related Art Conventionally, as a thermoelectric converter of this type,
There is one utilizing the Peltier effect as disclosed in Japanese Utility Model Application Laid-Open No. Sho 62-178554.
【0003】これは、図4及び図5に示すように、あい
対抗するように配置された略平板状の2個の熱交換器
1.2と、この熱交換器1.2の間にあって、1対以上
のP型半導体4とN型半導体5の対からなる熱電素子3
とから成る。この従来例では、P型半導体4とN型半導
体5とが、交互に複数個並べられた形態をなしている。
P型半導体4とN型半導体5とは、略直方体の形状であ
り、両者を直列につなぐため金属製の電極6が介在配置
されている。P型半導体4とN型半導体5とは、上端部
同士または、下端部同士を架橋接続され、この電極6の
外面部は、交互に熱交換器1または2に当接し、伝熱効
果を高めた状態で、熱交換器1に接続している。[0003] As shown in FIGS. 4 and 5, there are two substantially flat heat exchangers 1.2 arranged opposite to each other, and between the heat exchangers 1.2, Thermoelectric element 3 comprising at least one pair of P-type semiconductor 4 and N-type semiconductor 5
Consisting of In this conventional example, a plurality of P-type semiconductors 4 and N-type semiconductors 5 are alternately arranged.
The P-type semiconductor 4 and the N-type semiconductor 5 have a substantially rectangular parallelepiped shape, and a metal electrode 6 is interposed to connect the two in series. The P-type semiconductor 4 and the N-type semiconductor 5 are connected by cross-linking at their upper ends or at their lower ends, and the outer surface of the electrode 6 alternately contacts the heat exchanger 1 or 2 to enhance the heat transfer effect. Connected to the heat exchanger 1 in the closed state.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来のものにあっては、高熱側の熱交換器1と低熱側の熱
交換器2とが、まじかにあい対向するように配置されて
いるため、熱放射による高熱側から、低熱側への熱移動
が発生し、結果として、熱電変換効率を低下させるとい
う欠点があった。特に、最近のように、熱電変換装置が
うす型化されてくると、両者間の間隔が小さくなり、こ
の問題は、顕著となっている。However, in the above-described conventional apparatus, the heat exchanger 1 on the high heat side and the heat exchanger 2 on the low heat side are arranged so as to face each other. In addition, heat transfer from the high heat side to the low heat side due to heat radiation occurs, and as a result, there is a disadvantage that the thermoelectric conversion efficiency is reduced. In particular, when the thermoelectric conversion device is made thinner as in recent years, the distance between the two becomes smaller, and this problem is remarkable.
【0005】この発明は、上記の事由に鑑みてなされた
ものであり、その目的とするところは、高温側の熱交換
器から低温側の熱交換器への熱放射による熱移動を極力
低減した、高効率な熱電変換装置を提供することにあ
る。The present invention has been made in view of the above-mentioned circumstances, and an object thereof is to minimize heat transfer due to heat radiation from a heat exchanger on a high temperature side to a heat exchanger on a low temperature side. Another object of the present invention is to provide a highly efficient thermoelectric conversion device.
【0006】[0006]
【課題を解決するための手段】本発明の熱電変換装置
は、あい対抗するように、配置された略平板状の2個の
熱交換器1.2の間に、複数個のP型半導体4とN型半
導体5を金属製の電極6を介して直列に接合して形成し
た熱電素子3を配置し、あい隣る電極6のいづれか一方
を熱交換器1.2のいづれか一方に接続し、あい隣る電
極6のいづれか他方を熱交換器1.2のいづれか他方に
接続してなる熱電変換装置において、P型半導体4とN
型半導体5とは、上端部同士または下端部同士を電極6
にて架橋接続され、この電極6の内面部に対する熱交換
器1または2の、すくなくともいづれかの対向面に凹溝
7を設けて成ることを特徴とする。The thermoelectric converter according to the present invention comprises a plurality of P-type semiconductors 4 between two substantially flat heat exchangers 1.2 arranged so as to oppose each other. And a thermoelectric element 3 formed by joining an N-type semiconductor 5 in series via a metal electrode 6, and connecting one of the adjacent electrodes 6 to one of the heat exchangers 1.2, In a thermoelectric converter in which one of the adjacent electrodes 6 is connected to the other of the heat exchanger 1.2, the P-type semiconductor 4 and the N-type
The type semiconductor 5 is such that upper end portions or lower end portions are connected to electrodes 6.
The heat exchanger 1 or 2 is provided with a concave groove 7 on at least one of opposing surfaces thereof with respect to the inner surface of the electrode 6.
【0007】熱交換器1.2としては、熱伝導率の大き
い金属板、内部に蓄熱材、あるいは熱媒体等を封入した
薄い板状のパッケージ等が使用される。As the heat exchanger 1.2, a metal plate having a large thermal conductivity, a thin plate-like package in which a heat storage material, a heat medium, or the like is sealed is used.
【0008】凹溝7は、断面長方形のもの、断面V字形
のもの、断面半円形のもの等が採用される。The groove 7 has a rectangular cross section, a V-shaped cross section, a semicircular cross section, or the like.
【0009】以上のように、電極6の内面部に対する熱
交換器1または2の対向面に凹溝7を設けた結果、高温
側から低温側の熱交換器の1.2の間の距離が大きくな
り、両者間の放射熱交換量が小さくなる。As described above, as a result of providing the concave groove 7 on the surface of the heat exchanger 1 or 2 facing the inner surface of the electrode 6, the distance between the high temperature side and the low temperature side heat exchanger 1.2 is reduced. And the amount of radiant heat exchange between the two decreases.
【0010】ここで、凹溝7は、熱交換器1または2の
いづれか一方に設けておけば効果があるものであるが、
双方に設けておけば、より効果があがる。Here, the groove 7 is effective if provided in either one of the heat exchangers 1 and 2.
If it is provided on both sides, it will be more effective.
【0011】[0011]
【発明の実施の形態】以下、本発明の熱電変換装置を図
1乃至図3に基づいて説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A thermoelectric converter according to the present invention will be described below with reference to FIGS.
【0012】この熱電変換装置は、あい対抗するよう
に、配置された略平板状の2個の熱交換器1.2の間
に、略長方形の複数個のP型半導体4とN型半導体5を
金属製の電極6を介して直列に接合して形成した熱電素
子3を配置し、あい隣る電極6のいづれか一方を熱交換
器1.2のいづれか一方に接続し、あい隣る電極6のい
づれか他方を熱交換器1.2のいづれか他方に接続して
なる熱電変換装置において、P型半導体4とN型半導体
5とは、上端部同士または下端部同士を電極6にて架橋
接続され、この電極6の内面部に対する熱交換器1及び
2の、対向面の双方に凹溝7を設けて成ることを特徴と
するものである。This thermoelectric conversion device has a plurality of substantially rectangular P-type semiconductors 4 and N-type semiconductors 5 between two substantially flat heat exchangers 1.2 arranged so as to oppose each other. Are arranged in series via a metal electrode 6, and one of the adjacent electrodes 6 is connected to one of the heat exchangers 1.2, and the adjacent electrodes 6 are connected. In the thermoelectric conversion device in which one of the two is connected to the other of the heat exchanger 1.2, the P-type semiconductor 4 and the N-type semiconductor 5 are connected by bridging the upper end portions or the lower end portions with the electrode 6. The heat exchangers 1 and 2 with respect to the inner surface of the electrode 6 are provided with concave grooves 7 on both opposing surfaces.
【0013】熱交換器1.2は、アルミニュウム板から
形成されており、その表面に凹溝7が切削加工により形
成されている。The heat exchanger 1.2 is formed of an aluminum plate, and has a concave groove 7 formed on its surface by cutting.
【0014】電極6の内面部に対する熱交換器1または
2の対向面に凹溝7を設けた結果、高温側から低温側の
熱交換器の1.2の間の距離が大きくなり、両者間の放
射熱交換量が小さくなる。As a result of the provision of the concave groove 7 on the surface of the heat exchanger 1 or 2 facing the inner surface of the electrode 6, the distance between the high-temperature side heat exchanger 1.2 and the low-temperature side heat exchanger 1.2 is increased. Radiated heat exchange amount becomes smaller.
【0015】図1に示す実施態様では、凹溝7が、断面
長方形である。図2に示す実施態様では、凹溝7が、断
面V字形である。断面V字形の凹溝7を採用することに
より、熱交換器1.2間の対向面が平行に対面しなくな
り、図1に示す場合と比較してよりいっそう両者間の放
射熱交換量が小さくなる。In the embodiment shown in FIG. 1, the groove 7 is rectangular in cross section. In the embodiment shown in FIG. 2, the concave groove 7 has a V-shaped cross section. By adopting the concave groove 7 having a V-shaped cross section, the opposing surfaces between the heat exchangers 1.2 do not face each other in parallel, and the amount of radiant heat exchange between the two is further reduced as compared with the case shown in FIG. Become.
【0016】図3に示す実施態様では、凹溝7が、断面
半円形であるので、図1に示す場合と比較してよりいっ
そう両者間の放射熱交換量が小さくなるとともに溝の底
部にエッジ(鋭利に折れ曲がる曲面)をもたないので、
熱交換器1.2の対向面に応力集中の発生するのを防止
できる。In the embodiment shown in FIG. 3, since the concave groove 7 has a semicircular cross section, the amount of radiated heat exchange between the two is further reduced as compared with the case shown in FIG. (A curved surface that bends sharply)
The occurrence of stress concentration on the facing surface of the heat exchanger 1.2 can be prevented.
【0017】なお、凹溝7は、熱交換器1.2の電極6
に対向しない部分(熱交換器1と熱交換器2とが直接対
向する部分)にも設けておけば一層効果的であることは
いうまでもない。The groove 7 is provided with the electrode 6 of the heat exchanger 1.2.
It is needless to say that it is more effective if provided also in a portion that does not face (a portion where the heat exchanger 1 and the heat exchanger 2 directly face).
【0018】[0018]
【発明の効果】本発明の熱電変換装置によれば、電極6
の内面部に対する熱交換器1または2の対向面に凹溝7
を設けた結果、高温側から低温側の熱交換器の1.2の
間の距離が大きくなり、両者間の放射熱交換量が小さく
なる。この結果、本発明の熱電変換装置は、変換効率の
極めて優れたものとなっている。According to the thermoelectric converter of the present invention, the electrode 6
Groove 7 is formed in the surface of heat exchanger 1 or 2 facing the inner surface of
As a result, the distance between the high-temperature side and the low-temperature side heat exchangers 1.2 increases, and the amount of radiant heat exchange between the two decreases. As a result, the thermoelectric conversion device of the present invention has an extremely high conversion efficiency.
【図1】本発明の一の実施形態を示す断面図。FIG. 1 is a sectional view showing one embodiment of the present invention.
【図2】本発明の他の実施形態を示す断面図。FIG. 2 is a sectional view showing another embodiment of the present invention.
【図3】本発明のさらに異なる実施形態を示す断面図。FIG. 3 is a sectional view showing still another embodiment of the present invention.
【図4】従来例を示す斜視図。FIG. 4 is a perspective view showing a conventional example.
【図5】同上の断面図。FIG. 5 is a sectional view of the above.
1 熱交換器 2 熱交換器 3 熱電素子 4 P型半導体 5 N型半導体 6 電極 7 凹溝 DESCRIPTION OF SYMBOLS 1 Heat exchanger 2 Heat exchanger 3 Thermoelectric element 4 P-type semiconductor 5 N-type semiconductor 6 Electrode 7 Groove
Claims (4)
状の2個の熱交換器1.2の間に、複数個のP型半導体
4とN型半導体5を金属製の電極6を介して直列に接合
して形成した熱電素子3を配置し、あい隣る電極6のい
づれか一方を熱交換器1.2のいづれか一方に接続し、
あい隣る電極6のいづれか他方を熱交換器1.2のいづ
れか他方に接続してなる熱電変換装置において、P型半
導体4とN型半導体5とは、上端部同士または下端部同
士を電極6にて架橋接続され、この電極6の内面部に対
する熱交換器1または2の、すくなくともいづれかの対
向面に凹溝7を設けて成ることを特徴とする熱電変換装
置。1. A plurality of P-type semiconductors 4 and N-type semiconductors 5 are connected to a metal electrode 6 between two substantially flat heat exchangers 1.2 arranged so as to oppose each other. The thermoelectric element 3 formed by joining in series through the interposer is arranged, and one of the adjacent electrodes 6 is connected to one of the heat exchangers 1.2,
In a thermoelectric conversion device in which one of the adjacent electrodes 6 is connected to one of the other ends of the heat exchanger 1.2, the P-type semiconductor 4 and the N-type semiconductor 5 are connected to each other at the upper end or the lower end by the electrode 6. A thermoelectric conversion device characterized in that a concave groove 7 is provided on at least one of opposing surfaces of the heat exchanger 1 or 2 with respect to the inner surface of the electrode 6.
とする請求項1記載の熱電変換装置。2. The thermoelectric conversion device according to claim 1, wherein the concave groove has a rectangular cross section.
とする請求項1記載の熱電変換装置。3. The thermoelectric conversion device according to claim 1, wherein the concave groove has a V-shaped cross section.
とする請求項1記載の熱電変換装置。4. The thermoelectric conversion device according to claim 1, wherein the concave groove has a semicircular cross section.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8241670A JPH1093149A (en) | 1996-09-12 | 1996-09-12 | Thermoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8241670A JPH1093149A (en) | 1996-09-12 | 1996-09-12 | Thermoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1093149A true JPH1093149A (en) | 1998-04-10 |
Family
ID=17077779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8241670A Pending JPH1093149A (en) | 1996-09-12 | 1996-09-12 | Thermoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1093149A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5959240A (en) * | 1996-12-04 | 1999-09-28 | Ngk Insulators, Ltd. | Thermoelectric converter for heat-exchanger |
TWI382564B (en) * | 2006-02-20 | 2013-01-11 | Ind Tech Res Inst | Light emitting diode package structure and fabrication method thereof |
JP2014154761A (en) * | 2013-02-12 | 2014-08-25 | Furukawa Electric Co Ltd:The | Thermoelectric conversion module |
-
1996
- 1996-09-12 JP JP8241670A patent/JPH1093149A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5959240A (en) * | 1996-12-04 | 1999-09-28 | Ngk Insulators, Ltd. | Thermoelectric converter for heat-exchanger |
TWI382564B (en) * | 2006-02-20 | 2013-01-11 | Ind Tech Res Inst | Light emitting diode package structure and fabrication method thereof |
JP2014154761A (en) * | 2013-02-12 | 2014-08-25 | Furukawa Electric Co Ltd:The | Thermoelectric conversion module |
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