JPH1092928A - Electrode wiring and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress the noise such as crosstalk due to capacitive coupling between adjacent electrode wirings to avoid malfunctioning by treating the surface of a shield layer to form an insulation layer and providing the electrode wirings facing the shield layer through the insulation layer. SOLUTION: On a substrate 1 a first insulation film 4 is formed, a first conductive layer for constituting a shield layer 7 is formed on the film 4, the side face of the first conductive layer is treated to form a second insulation film 8 contg. component elements of the first conductive layer on the side face thereof, and second conductive layer 10 formed adjacent to the first conductive film through the second insulation film 8 on the first insulation film 4 as an electrode wiring. On this film 4 e.g. an Al shield layer 7 is formed, its surface is oxidized to form the insulation film 8 and the conductive layer 10 to be the electrode wiring layer 11 is deposited to fill up the gap between the shield layers 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an electrode wiring and a method for manufacturing the same, and more particularly, to an electrode wiring having a shielding layer and a method for manufacturing the same.

[0002]

2. Description of the Related Art With the miniaturization of elements, LSIs have achieved large scale and high speed circuits. As the electrode wiring connecting the elements, a metal film mainly composed of Al is formed on an insulating film, and the metal film is patterned into a predetermined shape by a photolithography method. Further, in order to cope with an increase in the scale of the circuit, a method of making this electrode wiring a multilayer has been performed. In recent years, a multilayer electrode wiring having four layers or five layers has been found.

Hereinafter, a method for forming an electrode wiring according to the prior art will be described with reference to FIGS. First, FIG.
As shown in FIG. 1, an element isolation 103 and an element 102 such as a transistor are formed on a silicon substrate 101. Next, FIG.
As shown in FIG. 7, an insulating film 104 made of SiO ₂ or the like is deposited on the substrate 101 to a thickness of about 800 nm by a CVD (chemical vapor deposition) method or the like.

[0004] Next, as shown in FIG.
Flatten using MP (chemical mechanical polishing) or the like. This is performed for the purpose of preventing the formation of a multilayer wiring, the step of each layer accumulating toward the upper layer, and a flat surface being unable to be obtained, making it difficult to form a pattern by photolithography.

Next, as shown in FIG. 19, a resist pattern 105 is formed in a predetermined shape by photolithography, and a contact hole 106 is formed by RIE (reactive ion etching) or the like.

Next, as shown in FIG.
On the insulating film 104, a metal film 107 mainly composed of, for example, Al or Cu is formed so as to embed 06. The metal film 107 may be formed by a CVD method, or may be formed by a sputtering method or the like and then completely fill the inside of the contact hole 106 by a reflow method or the like. Alternatively, the metal film 107 may be deposited after completely filling only the contact hole 106 with another kind of metal (for example, W or the like) using a CVD method or the like.
In the case where metal in the metal film 107 diffuses into an element or an insulating film and affects electric characteristics, a diffusion prevention film may be formed below the metal film 107.

Next, as shown in FIG. 21, a resist pattern 108 made of a photoresist is formed on the metal film 107, and the metal wiring 109 is formed by etching using the resist pattern 108 as a mask. Further, the resist pattern 108
Is removed (FIG. 22).

[0008] Next, as shown in FIG.
10 is formed in a flat shape. The insulating film 110 may be formed by flattening an insulating film formed by a plasma CVD method or the like by a CMP method or a combination of films such as SOG (spin on glass) to have a smooth shape.

Further, by repeating the same steps as those shown in FIGS. 17 to 22, the metal wiring 10 is formed as shown in FIG.
Via holes 111 and upper layer wirings 112 connecting the upper layer wiring 9 and the upper layer wiring 9 are formed. In order to form a more complicated circuit, the steps similar to those shown in FIGS. 17 to 22 may be repeated a predetermined number of times to form a multilayer wiring.

However, in the electrode wiring formed in this way, as the electrode wiring is miniaturized and the frequency of a signal transmitted through the electrode wiring increases, noise due to coupling between adjacent electrode wirings due to capacitance and the like is caused. (Crosstalk) occurs, which causes a malfunction.

[0011]

As described above, as the electrode wiring is miniaturized and the frequency of the signal transmitted through the electrode wiring is increased, noise (crosstalk) is generated due to coupling by capacitance between adjacent electrode wirings. ) Occurs, causing a malfunction.

The present invention has been made in view of the above circumstances, and has as its object to provide an electrode wiring which suppresses noise (crosstalk) and is less likely to malfunction, and a method of manufacturing the same.

[0013]

[Means for Solving the Problems]

(Summary) In order to solve the above-described problem, the first aspect of the present invention
A first insulating film formed on the substrate, a first conductive layer constituting a shielding layer formed on the first insulating film,
A second insulating film containing an element constituting the first conductive layer, formed on the side surface of the first conductive layer by insulating the side surface of the first conductive layer; An electrode wiring, comprising: a second conductive layer provided as an electrode wiring on the first insulating film adjacent to the first conductive layer via an insulating film.

In this invention, the following aspects are desirable. (1) The second insulating film is also formed on the upper surface of the first conductive layer by subjecting the upper surface of the first conductive layer to insulation treatment, and constitutes the first conductive layer. Contains elements.

(2) The lower surface of the first conductive layer and the lower surface of the second conductive layer are in the same plane. (3) The upper surface of the first conductive layer is in the same plane as or higher than the upper surface of the second conductive layer.

(4) A third conductive layer is formed on or on the substrate, and the first insulating film has a connection hole on the third conductive layer. The second conductive layer and the third conductive layer are electrically connected.

(5) The insulating treatment on the surface of the first conductive layer comprises an oxidation or nitridation treatment on the surface of the first conductive layer, and the second insulating film constitutes the first conductive layer. Be composed of elemental oxides or nitrides.

A second aspect of the present invention is a first insulating film formed on a substrate, a first conductive layer provided as an electrode wiring on the first insulating film, and a first conductive film provided on the first insulating film. A second insulating film containing an element constituting the first conductive layer formed on the side surface of the first conductive layer by insulating the side surface of the layer; An electrode wiring, comprising: a first conductive layer and a second conductive layer that constitutes a shielding layer formed on the first insulating film adjacent to the first conductive layer.

In this invention, the following aspects are desirable. (1) The second insulating film is also formed on the upper surface of the first conductive layer by insulating the upper surface of the first conductive layer to form the first conductive layer. Contains elements.

(2) The lower surface of the first conductive layer and the second conductive layer
Shall be in the same plane as the lower surface of the conductive layer. (3) The upper surface of the first conductive layer is in the same plane as or lower than the upper surface of the second conductive layer.

(4) A third conductive layer is formed on or on the substrate, and the first insulating film has a connection hole on the third conductive layer, and the connection hole is formed through the connection hole. The first conductive layer and the third conductive layer are electrically connected.

(5) The insulating treatment on the surface of the first conductive layer comprises an oxidation or nitridation treatment on the surface of the first conductive layer, and the second insulating film constitutes the first conductive layer. Be composed of elemental oxides or nitrides.

Further, as a first method of the present invention, a step of forming a first insulating film on a substrate,
Forming a first conductive layer that constitutes a shielding layer on the insulating film, processing the first conductive layer to form a groove in a region where an electrode wiring is to be formed, Forming a second insulating film containing an element constituting the first conductive layer on the surface of the first conductive layer by insulating the surface of the conductive layer; Forming a second conductive layer to be an electrode wiring.

In this invention, the following aspects are desirable. (1) forming a third conductive layer on or above the substrate before forming the first insulating film, and exposing the third conductive layer to a predetermined region in the groove Forming a second conductive layer by forming a conductive film so as to fill the connection hole and the groove.

(2) The step of forming the second conductive layer includes the step of forming a conductive film on the entire surface so as to fill the groove, and the step of retreating the surface of the conductive film to form the second conductive layer. A step of selectively leaving the conductive film inside.

(3) The step of forming the second conductive layer includes a step of forming a conductive film on the entire surface so as to fill the connection hole and the groove, and a step of retreating the surface of the conductive film. And selectively leaving the conductive film inside the connection hole and the groove.

(4) The step of leaving the conductive film includes:
17. The electrode wiring according to claim 13, wherein the upper surface of the second conductive layer inside the groove is formed so as to be in the same plane as or lower than the upper surface of the first conductive layer. Production method.

(5) The step of processing the first conductive layer is performed by etching the first conductive layer until reaching the first insulating film. (6) The step of insulating the surface of the first conductive layer includes:
A step of oxidizing or nitriding a surface of the first conductive layer, wherein the second insulating film is made of an oxide or nitride of an element constituting the first conductive layer.

Further, as a second manufacturing method of the present invention, a step of forming a first insulating film on a substrate, and forming a first conductive layer to be an electrode wiring on the first insulating film. Forming a groove in a region where a shielding layer is to be formed by processing the first conductive layer, and insulating the surface of the first conductive layer to form the first conductive layer. Forming a second insulating film containing a constituent element on a surface of the first conductive layer; and forming a second conductive layer selectively forming a shielding layer inside the groove. A method for manufacturing an electrode wiring is provided.

In this invention, the following aspects are desirable. (1) forming a third conductive layer on or above the substrate before forming the first insulating film, and exposing the third conductive layer to a predetermined region in the groove Forming a first conductive layer by forming a conductive film so as to fill the connection hole.

(2) The step of forming the second conductive layer includes the step of forming a conductive film on the entire surface so as to fill the groove, and the step of recessing the surface of the conductive film by retreating the surface of the conductive film. A step of selectively leaving the conductive film inside.

(3) The step of leaving the conductive film includes:
The method is performed such that the upper surface of the second conductive layer inside the groove is flush with or higher than the upper surface of the first conductive layer.

(4) The step of insulating the surface of the first conductive layer comprises the step of oxidizing or nitriding the surface of the first conductive layer, and the second insulating film is formed of the first conductive layer. Consisting of oxides or nitrides of the elements constituting

In the present invention, the electrode wiring means an electrode or a wiring, or a structure in which the electrode and the wiring are mixed. (Function) According to the present invention, at least a side surface of a first conductive layer formed as a shielding layer or an electrode wiring on a first insulating film is insulated, so that the side surface of the first conductive layer is A second insulating film containing an element constituting the first conductive layer is formed, and a shielding layer is formed on the first insulating film so as to face the first conductive layer via the second insulating film. Therefore, since the electrode wiring is provided and the shielding layer is provided for the electrode wiring, it is possible to prevent noise due to the coupling between the adjacent electrode wirings from being mixed into the signal and to secure a stable operation of the circuit. In addition, an insulating film between the shielding layer and the electrode wiring can be easily formed in a self-aligned manner, and a fine electrode wiring can be formed.

[0035]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the electrode wiring according to the present invention will be described with reference to the drawings. (First Embodiment) FIGS. 1 to 8 are process sectional views for explaining a first embodiment of the present invention. The present embodiment is characterized in that an insulating film is formed on the surface of a shielding layer by performing an insulating treatment, and an electrode wiring is provided facing the shielding layer via the insulating film.

First, as shown in FIG. 1, a gate electrode, an element 2 including source / drain regions, and an element isolation insulating film 3 are formed on a silicon substrate 1, and an insulating film 4 made of a silicon oxide film or the like is formed on the entire surface. It is formed in a flat shape. Next, FIG.
As shown in (1), a metal layer 5 serving as a shielding layer for an electrode wiring layer is deposited on the insulating film 4 by using a sputtering method, a CVD method, or the like.

The metal layer 5 may be any material as long as the metal oxide formed by oxidation has insulating properties. For example, a material mainly composed of Al or the like can be used. Also,
A silicon film, particularly a silicon film containing conductive impurities (phosphorus, arsenic, boron, or the like) of 2 × 10 ²⁰ cm ⁻³ or more may be used. In this case, a silicon oxide film is formed on the surface by oxidation. Furthermore, high melting point metals (W, Mo, Ti,
A film made of silicide (Ni, Co, Ta, Nb, etc.) may be used instead of the metal layer 5, and in this case, a film made of silicon oxide is formed on the surface by oxidation.

Next, as shown in FIG. 3, a resist pattern 6a is formed in a predetermined area.
Is used as a mask to form an anisotropic etching, thereby forming a shielding layer 7 (FIG. 4). Further, as shown in FIG. 5, by oxidizing the surface of the shielding layer 7, an insulating film 8 is formed on the surface of the shielding layer 7. Al as the material of the shielding layer 7
In the case where a material mainly containing, for example, is used, the insulating film 8 becomes an aluminum oxide film.

Next, as shown in FIG.
A resist pattern 6b having an opening at a predetermined position therebetween is formed on the insulating film 4, and etching is performed using the resist pattern 6b as a mask to form a contact hole 9 in the insulating film 4.

Subsequently, as shown in FIG. 7, after removing the resist pattern, the metal layer 10 serving as an electrode wiring layer is buried so as to fill the inside of the contact hole 9 and the space between the shielding layers 7.
Is deposited using a sputtering method or a CVD method.
As a material of the metal layer 10, for example, Al, Cu, W,
It is possible to use a material containing a high melting point metal such as Mo or Ti as a main component. In addition, a silicon film, particularly 2 × 10 ²⁰
It may be a silicon film containing a conductive impurity (phosphorus, arsenic, boron, etc.) of not less than cm ^{-3 and} further comprises a silicide of a high melting point metal (W, Mo, Ti, Ni, Co, Ta, Nb, etc.). It may be a film.

Next, as shown in FIG. 8, the surface of the metal layer 10 is flattened by using a CMP method or the like, and the metal layer 10 is selectively left inside the contact hole 9 and between the shielding layer 7. Thereby, the electrode wiring layer 11 is formed.

Here, when the metal layer 10 is selectively left between the inside of the contact hole 9 and the shielding layer 7, the insulating film 8 formed on the upper surface of the shielding layer 7 may be removed. In this case, an insulating film such as an interlayer insulating film may be formed again thereon.

Thereafter, by repeating the above steps a plurality of times, it is possible to form a multilayer wiring having a shielding layer. FIG. 9 is a process cross-sectional view for describing a modification of the above-described embodiment. As shown in FIG.
The electrode wiring layer 12 (the material is the same as the material of the electrode wiring layer 11 described above) is placed in the same plane as the upper surface of the shielding layer 7 or lower than the upper surface of the shielding layer 7. The feature is that it is selectively embedded between the inside and the shielding layer 7. According to this modification, the electrode wiring layer 1
2 is more sufficiently covered by the shielding layer 7, so that noise due to coupling between adjacent electrode wirings can be more reliably prevented from being mixed into the signal, and a stable operation of the circuit can be ensured.

(Second Embodiment) FIGS. 10 to 15
It is a process sectional view for explaining a 2nd embodiment of the present invention. The present embodiment is characterized in that an insulating film is formed on the surface of an electrode wiring by performing an insulating process, and a shielding layer is provided facing the electrode wiring via the insulating film.

First, as shown in FIG.
Element 2 including a gate electrode and a source / drain region on 1
2. An element isolation insulating film 23 is formed, and an insulating film 24 made of a silicon oxide film or the like is formed on the entire surface in a flat shape.
Next, as shown in FIG. 11, a resist pattern 26a is formed in a predetermined region, and anisotropic etching is performed using the resist pattern 26a as a mask, whereby the insulating film 2 is formed.
4, a contact hole 29 is formed.

Next, as shown in FIG. 12, after removing the resist pattern 26a, a metal layer 25 serving as an electrode wiring layer is deposited by sputtering or CVD so as to fill the inside of the contact hole 29. . The material of the metal layer 25 may be any material as long as the metal oxide formed by oxidation has an insulating property. For example, a material containing Al or the like as a main component can be used. Further, a silicon film, particularly a silicon film containing conductive impurities (phosphorus, arsenic, boron, etc.) of 2 × 10 ²⁰ cm ⁻³ or more may be used. In this case, a silicon oxide film is formed on the surface by oxidation. You. Furthermore, high melting point metals (W, Mo, Ti, Ni, Co, T
(a, Nb, etc.) may be used instead of the metal layer 5. In this case, a film made of silicon oxide is formed on the surface by oxidation. Further, a resist pattern 26b is formed on the metal layer 25 in an electrode wiring pattern shape.

Next, as shown in FIG. 13, the electrode wiring layer 27 is formed by performing anisotropic etching using the resist pattern 26b as a mask. Further, after removing the resist pattern 26b, the surface of the electrode wiring layer 27 is oxidized to form an insulating film 28 on the surface of the electrode wiring layer 27. When a material mainly containing Al or the like is used as the material of the electrode wiring layer 27, the insulating film 28 is an aluminum oxide film.

Subsequently, as shown in FIG. 14, a metal layer 30 serving as a shielding layer of the electrode wiring layer is deposited by a sputtering method or a CVD method so as to fill the space between the electrode wiring layers 27. As a material of the metal layer 30, for example, Al, C
It is possible to use a material mainly composed of a high melting point metal such as u, W, Mo, and Ti. Further, a silicon film, particularly a silicon film containing conductive impurities (phosphorus, arsenic, boron, or the like) of 2 × 10 ²⁰ cm ⁻³ or more may be used. , Ta, Nb, etc.)
May be used.

Next, as shown in FIG. 15, unevenness on the surface of the metal layer 30 is flattened using a CMP method or the like, and the metal layer 30 is selectively left between the electrode wiring layers 27.
The shielding layer 31 is formed.

Here, the metal layer 30 is provided between the electrode wiring layers 27.
May be removed, the insulating film 28 formed on the upper surface of the electrode wiring layer 27 may be removed. In this case, an insulating film such as an interlayer insulating film may be formed thereon again.

Thereafter, by repeating the above steps a plurality of times, a multilayer wiring having a shielding layer can be formed. Preferably, the shielding layer 31 is selectively buried between the electrode wiring layers 27 so that the upper surface of the shielding layer 31 is located in the same plane as or higher than the upper surface of the electrode wiring layer 27. As a result, the electrode wiring layer 27 is
1, the noise can be more reliably prevented from being mixed into the signal due to the coupling between the adjacent electrode wirings, and the stable operation of the circuit can be ensured.

The present invention is not limited to the above embodiment. For example, in the above embodiment, the case where the wiring having the shielding layer is formed on the element has been described. However, after forming the desired number of electrode wirings by the conventional method, the shielding layer is formed by the method of the above embodiment. It goes without saying that an electrode wiring having the following can be formed.

It is preferable that the above-mentioned shielding layer is grounded for the purpose. Further, since the wiring formed by the above-described embodiment method has basically the same structure as the coaxial cable, it is necessary to consider the influence of the reflected wave. That is, the end of the electrode wiring is terminated by a resistance equivalent to a characteristic impedance determined from the thickness and the dielectric constant of the insulating film formed on the surface of the shielding layer or the electrode wiring layer and the shape of the shielding layer or the electrode wiring. Is preferred.

Further, the step of insulating the surface of the shielding layer or the electrode wiring layer is not limited to the step of oxidizing the surface of these layers, but may be the step of nitriding. For example, when a material mainly composed of Al or the like is used as a material of the shielding layer or the electrode wiring layer, an aluminum nitride film is formed on the surface of the layer. In addition, a silicon film, particularly 2 × 10 ²⁰
When a silicon film containing a conductive impurity (such as phosphorus, arsenic, and boron) of not less than cm ^-3 is used, a silicon nitride film is formed on the surface by nitriding. Furthermore, when a film made of silicide of a high melting point metal (W, Mo, etc.) is used, a film made of silicon nitride is formed on the surface by nitriding. In addition, various modifications can be made without departing from the scope of the present invention.

[0055]

According to the present invention, it is possible to prevent noise due to coupling between adjacent electrode wirings from being mixed into a signal, to secure a stable operation of a circuit, and to provide insulation between a shielding layer and an electrode wiring. The film can be easily formed in a self-aligned manner, and a fine electrode wiring can be formed.

[Brief description of the drawings]

FIG. 1 is a process cross-sectional view for explaining a first embodiment of the present invention.

FIG. 2 is a process cross-sectional view for explaining the first embodiment of the present invention following FIG. 1;

FIG. 3 is a process cross-sectional view for explaining the first embodiment of the present invention following FIG. 2;

FIG. 4 is a process cross-sectional view for explaining the first embodiment of the present invention following FIG. 3;

FIG. 5 is a process cross-sectional view for explaining the first embodiment of the present invention following FIG. 4;

FIG. 6 is a process cross-sectional view for explaining the first embodiment of the present invention following FIG. 5;

FIG. 7 is a process cross-sectional view for explaining the first embodiment of the present invention following FIG. 6;

FIG. 8 is a process sectional view for explaining the first embodiment of the present invention following FIG. 7;

FIG. 9 is a process cross-sectional view for explaining a modification of the first embodiment of the present invention.

FIG. 10 is a process cross-sectional view for explaining the second embodiment of the present invention.

FIG. 11 is a process sectional view for explaining the second embodiment of the present invention following FIG. 10;

FIG. 12 is a process sectional view for explaining the second embodiment of the present invention following FIG. 11;

FIG. 13 is a process cross-sectional view for explaining the second embodiment of the present invention following FIG. 12;

FIG. 14 is a process cross-sectional view for explaining the second embodiment of the present invention following FIG. 13;

FIG. 15 is a process sectional view for explaining the second embodiment of the present invention following FIG. 14;

FIG. 16 is a process cross-sectional view for explaining a conventional method of forming an electrode wiring.

FIG. 17 is a process sectional view for describing the conventional method for forming the electrode wiring, following FIG. 16;

FIG. 18 is a process cross-sectional view for explaining the conventional method of forming the electrode wiring, following FIG. 17;

FIG. 19 is a process sectional view for explaining the conventional method of forming the electrode wiring, following FIG. 18;

FIG. 20 is a process cross-sectional view for explaining the conventional method of forming the electrode wiring, following FIG. 19;

FIG. 21 is a process sectional view for explaining the conventional method of forming the electrode wiring, following FIG. 206;

FIG. 22 is a process cross-sectional view for explaining the conventional method of forming the electrode wiring, following FIG. 21;

FIG. 23 is a process sectional view for explaining the conventional method of forming the electrode wiring, following FIG. 22;

FIG. 24 is a process sectional view for explaining the conventional method of forming the electrode wiring, following FIG. 23;

[Explanation of symbols]

 1, 21: silicon substrate 2, 22: element 3, 23: element isolation insulating film 4, 24: insulating film 5, 30: metal layer 6a, 6b, 26a, 26b constituting a shielding layer: resist pattern 7, 31: Shielding layer 8, 28: Insulating film 9, 29: Contact hole 10, 25: Metal layer forming electrode wiring layer 11, 12, 27: Electrode wiring layer

Claims (24)

[Claims] 1. A first insulating film formed on a substrate, a first conductive layer constituting a shielding layer formed on the first insulating film, and a side surface of the first conductive layer. A second insulating film formed on a side surface of the first conductive layer by performing an insulating process and containing an element constituting the first conductive layer;
The first conductive layer adjacent to the first conductive layer via an insulating film of
And a second conductive layer provided as an electrode wiring on the insulating film. 2. The second insulating film is also formed on the upper surface of the first conductive layer by insulating the upper surface of the first conductive layer. 2. The electrode wiring according to claim 1, further comprising a constituent element. 3. The electrode wiring according to claim 1, wherein the lower surface of the first conductive layer and the lower surface of the second conductive layer are in the same plane. 4. The electrode wiring according to claim 1, wherein an upper surface of said first conductive layer is in the same plane as or higher than an upper surface of said second conductive layer. 5. A third conductive layer is formed on or on the substrate, the first insulating film has a connection hole on the third conductive layer, and the connection hole is formed through the connection hole. The electrode wiring according to claim 1, wherein a second conductive layer and the third conductive layer are electrically connected. 6. The insulating treatment of the surface of the first conductive layer,
Oxidizing or nitriding the surface of the first conductive layer,
6. The method according to claim 1, wherein the second insulating film is made of an oxide or a nitride of an element constituting the first conductive layer.
The electrode wiring described. 7. A first insulating film formed on a substrate, a first conductive layer provided as an electrode wiring on the first insulating film, and a side surface of the first conductive layer is insulated. And a second insulating film containing an element constituting the first conductive layer formed on a side surface of the first conductive layer, and the first conductive layer via the second insulating film. And a second conductive layer forming a shielding layer formed on the first insulating film adjacent to the first insulating film. 8. The second insulating film is also formed on the upper surface of the first conductive layer by insulating the upper surface of the first conductive layer. 8. The electrode wiring according to claim 7, comprising a constituent element. 9. The electrode wiring according to claim 7, wherein the lower surface of the first conductive layer and the lower surface of the second conductive layer are in the same plane. 10. An upper surface of the first conductive layer is provided on the second conductive layer.
10. The electrode wiring according to claim 7, wherein the electrode wiring is in the same plane as or lower than the upper surface of the conductive layer. 11. A third conductive layer is formed on or on the substrate, and the first insulating film has a connection hole on the third conductive layer, and the connection hole is formed through the connection hole. 11. The electrode wiring according to claim 7, wherein the first conductive layer and the third conductive layer are electrically connected. 12. The insulating treatment of the surface of the first conductive layer comprises oxidizing or nitriding the surface of the first conductive layer, and the second insulating film is an element constituting the first conductive layer. 12. The electrode wiring according to claim 7, comprising an oxide or a nitride of the above. 13. A step of forming a first insulating film on a substrate, a step of forming a first conductive layer constituting a shielding layer on the first insulating film, and forming the first conductive layer on the first insulating film. Processing to form a groove in a region where an electrode wiring is to be formed;
Forming a second insulating film containing an element constituting the first conductive layer on the surface of the first conductive layer by insulating the surface of the first conductive layer; Forming a second conductive layer to be an electrode wiring. 14. forming a third conductive layer on or on the substrate before forming the first insulating film;
Forming a connection hole exposing the third conductive layer in a predetermined region in the groove; forming a conductive film so as to fill the connection hole and the groove; 14. A method for manufacturing an electrode wiring according to claim 13, further comprising the step of: 15. The step of forming the second conductive layer,
Forming a conductive film on the entire surface so as to fill the groove, and retreating the surface of the conductive film to selectively leave the conductive film inside the groove. The method for manufacturing an electrode wiring according to claim 13 or 14, wherein: 16. The step of forming the second conductive layer,
Forming a conductive film on the entire surface so as to fill the connection hole and the groove; and retreating the surface of the conductive film to selectively form the conductive film inside the connection hole and the groove. 16. The method for manufacturing an electrode wiring according to claim 13, further comprising: 17. The method according to claim 17, wherein the step of leaving the conductive film is performed such that an upper surface of the second conductive layer inside the groove is flush with or lower than an upper surface of the first conductive layer. 17. The method for manufacturing an electrode wiring according to claim 13, wherein the method is performed. 18. The step of processing the first conductive layer,
14. The method according to claim 13, wherein the etching is performed by etching the first conductive layer until reaching the first insulating film.
18. The method for manufacturing an electrode wiring according to any one of claims 17 to 17. 19. The step of insulating the surface of the first conductive layer comprises the step of oxidizing or nitriding the surface of the first conductive layer, and the second insulating film forms a layer on the first conductive layer. 19. The method for manufacturing an electrode wiring according to claim 13, comprising an oxide or a nitride of a constituent element. 20. A step of forming a first insulating film on a substrate, a step of forming a first conductive layer serving as an electrode wiring on the first insulating film, and processing the first conductive layer Forming a groove in a region where a shielding layer is to be formed, and insulating the surface of the first conductive layer to form a second insulating film containing an element constituting the first conductive layer. A method for manufacturing an electrode wiring, comprising: forming a first conductive layer on a surface of the first conductive layer; and forming a second conductive layer selectively forming a shielding layer inside the groove. 21. forming a third conductive layer on or above the substrate before forming the first insulating film;
Forming a connection hole exposing the third conductive layer in a predetermined region in the groove, and forming a first conductive layer by forming a conductive film so as to fill the connection hole; 21. The method according to claim 20, further comprising the steps of: 22. The step of forming the second conductive layer,
Forming a conductive film on the entire surface so as to fill the groove, and retreating the surface of the conductive film to selectively leave the conductive film inside the groove. 22. The method for manufacturing an electrode wiring according to claim 20, wherein: 23. The step of leaving the conductive film, wherein the upper surface of the second conductive layer inside the groove is in the same plane as or higher than the upper surface of the first conductive layer. The method according to claim 20, wherein the method is performed. 24. The step of insulating the surface of the first conductive layer comprises the step of oxidizing or nitriding the surface of the first conductive layer, and the second insulating film forms a layer on the first conductive layer. 24. The method of manufacturing an electrode wiring according to claim 20, comprising an oxide or a nitride of a constituent element.