JPH1092607A - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JPH1092607A JPH1092607A JP24611196A JP24611196A JPH1092607A JP H1092607 A JPH1092607 A JP H1092607A JP 24611196 A JP24611196 A JP 24611196A JP 24611196 A JP24611196 A JP 24611196A JP H1092607 A JPH1092607 A JP H1092607A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- temperature sensor
- lead frame
- insulating substrate
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Non-Adjustable Resistors (AREA)
- Thermistors And Varistors (AREA)
- Details Of Resistors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、薄膜サーミスタに
よる温度センサに関し、特に、薄膜サーミスタチップの
外部引出用リードの引っ張り強度を改善するためになさ
れた温度センサに係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature sensor using a thin film thermistor, and more particularly to a temperature sensor for improving the tensile strength of a lead for externally drawing out a thin film thermistor chip.
【０００２】[0002]
【従来の技術】従来の温度センサは、例えば、実開昭６
２−１８８１０３号公報や実開昭５８−７７００２号公
報等がある。図８は前者の温度センサ（薄膜サーミスタ
による温度センサ）を示す斜視図であり、その構造はア
ルミナ（Ａｌ2 Ｏ3 ）の絶縁基板２０上に、白金（Ｐ
ｔ）等の金属による櫛歯状に加工された電極部２１ａ，
２１ｂが対向するように配置され、基板２０の電極層２
１ａ，２１ｂ上に温度依存性を有するＳｉＣ薄膜２３、
または金属酸化物のサーミスタ材料等からなる感熱抵抗
膜が形成されている。引出リード線２４ａ，２４ｂは電
極層２１ａ，２１ｂに接続され、必要に応じて電極層２
１ａ，２１ｂの一部を残して感熱抵抗膜上にガラス等の
保護膜が形成されている。2. Description of the Related Art A conventional temperature sensor is disclosed in, for example,
2-188103 and Japanese Utility Model Laid-Open No. 58-77002. FIG. 8 is a perspective view showing the former temperature sensor (temperature sensor using a thin film thermistor), and its structure is such that platinum (P) is placed on an insulating substrate 20 made of alumina (Al 2 O 3 ).
t), the electrode portions 21a processed into a comb shape by a metal such as
21b are arranged so as to face each other, and the electrode layer 2
A temperature-dependent SiC thin film 23 on 1a, 21b;
Alternatively, a heat-sensitive resistance film made of a metal oxide thermistor material or the like is formed. The lead wires 24a, 24b are connected to the electrode layers 21a, 21b, and if necessary, the electrode layers 2a, 21b.
A protective film such as glass is formed on the heat-sensitive resistive film except a part of 1a and 21b.
【０００３】感熱抵抗膜は、スパッタリング等の公知技
術によって形成される。このような薄膜サーミスタチッ
プは、形状が小さくリード線接続部も狭い。通常、リー
ド線２４ａ，２４ｂは電極層２１ａ，２１ｂのリード線
接続部に半田付け、導電性接着剤あるいは溶接等の方法
によって電気的に接続され、必要に応じて全体を絶縁材
料で被覆して使用されている。[0003] The heat-sensitive resistive film is formed by a known technique such as sputtering. Such a thin film thermistor chip has a small shape and a narrow lead wire connection portion. Normally, the lead wires 24a and 24b are electrically connected to the lead wire connecting portions of the electrode layers 21a and 21b by a method such as soldering, a conductive adhesive, or welding, and the whole is covered with an insulating material as necessary. It is used.
【０００４】図９は、後者の薄膜サーミスタを示す平面
図であり、この薄膜サーミスタ２５はセラミック基板上
に電極層２６ａ，２６ｂが形成され、電極層２６ａ，２
６ｂに外部引出用リード線２７ａ，２７ｂがそれぞれ接
続されている。薄膜サーミスタの外部引出用リード線２
７ａ，２７ｂは、電極層２６ａ，２６ｂの幅に対して幅
が狭いのが通例である。FIG. 9 is a plan view showing the latter thin-film thermistor. This thin-film thermistor 25 has electrode layers 26a and 26b formed on a ceramic substrate.
External lead wires 27a and 27b are connected to 6b, respectively. External lead 2 for thin film thermistor
7a and 27b are usually narrower than the width of the electrode layers 26a and 26b.
【０００５】[0005]
【発明が解決しようとする課題】一般に、薄膜サーミス
タは形状が非常に小さいこともあって、薄膜サーミスタ
による温度センサの量産時、その電極層のリード線接続
部に正確に、且つ歩留りよく極細の外部引出用リード線
を接続するのは、非常に難しい技術である。例えば、薄
膜サーミスタを位置決めして整列させる治具や外部引出
用リード線の位置間隔を正確に決める治具を使用しなけ
ればならない。また、量産時は治具を使用しても歩留ま
りよく製造することは難しい欠点があった。In general, since the thin film thermistor has a very small shape, when the temperature sensor is mass-produced by the thin film thermistor, the thin film thermistor is precisely and precisely formed at the lead wire connecting portion of the electrode layer. Connecting external lead wires is a very difficult technique. For example, a jig for positioning and aligning the thin film thermistor and a jig for accurately determining the interval between the external lead wires must be used. Further, at the time of mass production, there is a drawback that it is difficult to produce with good yield even if a jig is used.
【０００６】更に、薄膜サーミスタを用いた温度センサ
は、薄膜サーミスタの電極層の膜厚は薄く、図９に示す
ように薄膜サーミスタ２５の電極２６ａ，２６ｂの幅に
比べてリード線２７ａ，２７ｂの線幅が小さいために、
固定接着した外部引出用リード線２７ａ，２７ｂが強く
引っ張られると電極層２６ａ，２６ｂが簡単に剥離して
断線することがあった。従って、このような薄膜サーミ
スタでは電極層に接続する外部引出用リード線の太さに
も限界があり、手作業で行える程度の太さを持ったリー
ド線を接続することは事実上不可能であった。Further, in a temperature sensor using a thin-film thermistor, the electrode layer of the thin-film thermistor is thin, and as shown in FIG. 9, the width of the lead wires 27a and 27b is smaller than the width of the electrodes 26a and 26b of the thin-film thermistor 25. Because the line width is small,
If the external lead wires 27a and 27b fixed and bonded are strongly pulled, the electrode layers 26a and 26b may be easily peeled off and disconnected. Therefore, in such a thin film thermistor, the thickness of the external lead wire connected to the electrode layer is also limited, and it is practically impossible to connect a lead wire having a thickness that can be manually operated. there were.
【０００７】このような欠点を解消するために、後者の
薄膜サーミスタでは、その基板にリード線を固定するた
めの穴を設け、この穴にリード線を通してから半田付け
等で接着固定してガラスコートで覆った構造のものが提
案されている。しかしながら、薄膜サーミスタの形状が
小さいこともあって基板に穴を開けるのは無理があり、
例え、基板に穴を設けたとしてもこの穴にリード線を通
して固定しなければならず作業性が悪くなる欠点があっ
た。In order to solve such a drawback, in the latter thin film thermistor, a hole for fixing a lead wire is provided on the substrate, and the lead wire is passed through the hole, and the hole is adhered and fixed by soldering or the like to form a glass coat. A structure covered with is proposed. However, due to the small size of the thin film thermistor, it is impossible to make a hole in the substrate,
For example, even if a hole is formed in the substrate, a lead wire must be fixed through the hole, and there is a disadvantage that workability is deteriorated.
【０００８】本発明は、上記課題に鑑みてなされたもの
であって、薄膜サーミスタの電極剥離強度を増加させる
とともに、耐湿性、耐水性等の耐環境性を高めて信頼性
の高い薄膜サーミスタによる温度センサを提供すること
を目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a highly reliable thin film thermistor which increases the electrode peeling strength of a thin film thermistor and enhances environmental resistance such as moisture resistance and water resistance. It is an object to provide a temperature sensor.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記課題を解
決するためになされたものであり、請求項１の発明は、
第１の絶縁基板面に形成された感熱膜と前記感熱膜に接
する一対の電極層とを有する薄膜サーミスタチップと、
前記第１の絶縁基板と略同一形状の第２の絶縁基板と、
リードフレームの脚柱部先端を前記電極層に接着した後
に、前記第１の絶縁基板と前記第２の絶縁基板とで前記
脚柱部を挟むように接着固定する絶縁性接着層と、前記
リードフレームから切り出された脚柱部による外部導出
用のリード線である電極端子と、を具備することを特徴
とする温度センサであり、薄膜サーミスタチップの電極
層に電極端子が接続され、薄膜サーミスタチップの第１
の絶縁基板と同形状の第２の絶縁基板を絶縁性接着層で
固定することによって、薄膜サーミスタ（感熱膜）の耐
湿性、耐水性等の耐環境性を高められ、かつ電極層から
電極端子が容易に離脱することがない温度センサであ
る。Means for Solving the Problems The present invention has been made to solve the above problems, and the invention of claim 1 is as follows.
A thin-film thermistor chip having a heat-sensitive film formed on a first insulating substrate surface and a pair of electrode layers in contact with the heat-sensitive film;
A second insulating substrate having substantially the same shape as the first insulating substrate;
An insulating adhesive layer that adheres and fixes the tip of the pillar portion of the lead frame to the electrode layer, and then sandwiches the pillar portion between the first insulating substrate and the second insulating substrate; An electrode terminal which is a lead wire for external derivation by a pillar portion cut out from the frame, wherein the electrode terminal is connected to an electrode layer of the thin film thermistor chip, and the thin film thermistor chip First
By fixing a second insulating substrate having the same shape as that of the above-mentioned insulating substrate with an insulating adhesive layer, the thin film thermistor (heat-sensitive film) can be improved in environmental resistance such as moisture resistance, water resistance, and the like. Is a temperature sensor that does not easily come off.
【００１０】また、請求項２の発明は、第１と第２の帯
状部と各帯状部から対向して延びる脚柱部とからなるリ
ードフレームと、第１の絶縁基板面に形成された感熱膜
と前記感熱膜に接する一対の電極層とを有する薄膜サー
ミスタチップと、前記電極層に前記脚柱部の先端が前記
一対の電極層に導電性接着剤によって接着され、前記第
１の絶縁基板と第２の絶縁基板とによって前記脚柱部を
挟むように接着固定する絶縁性接着層と、を備えること
を特徴とする温度センサであり、リードフレームに複数
の温度センサが形成され、温度センサの実装時にリード
フレームの帯状部から切り離して用いられ、薄膜サーミ
スタの電極部に電極端子が接続され、絶縁基板を絶縁性
接着層で固定することによって、薄膜サーミスタ（感熱
膜）の耐湿性、耐水性等の耐環境性を高められ、かつ電
極部から電極端子が容易に離脱することがない温度セン
サである。According to a second aspect of the present invention, there is provided a lead frame including first and second strips and a pillar extending from each strip, and a heat-sensitive layer formed on the first insulating substrate surface. A thin-film thermistor chip having a film and a pair of electrode layers in contact with the heat-sensitive film; and a tip of the pillar portion bonded to the electrode layer by a conductive adhesive to the pair of electrode layers; And a second insulating substrate, and an insulating adhesive layer adhesively fixing the pillar portion so as to sandwich the pillar portion, wherein a plurality of temperature sensors are formed on the lead frame, and the temperature sensor The thin film thermistor (thermosensitive film) is used by separating it from the strip of the lead frame at the time of mounting, connecting the electrode terminals to the electrode part of the thin film thermistor, and fixing the insulating substrate with an insulating adhesive layer. Enhanced environmental resistance sex, etc., and a temperature sensor is not the electrode terminal from the electrode portion is easily removed.
【００１１】また、請求項３の発明は、前記リードフレ
ームの脚柱部の先端に幅広部を形成したことを特徴とす
る請求項１又は２に記載の温度センサであり、脚柱部の
先端を幅広部にすることによって、幅広部は導電性接着
剤によって、幅広部が電極層に電気的に接続されるとと
もに、第１の絶縁基板に強固に接着され、且つ、幅広部
が絶縁性接着層に強固に噛み合って電極端子が容易に離
脱することがない温度センサである。The invention according to claim 3 is the temperature sensor according to claim 1 or 2, wherein a wide portion is formed at the tip of the pillar portion of the lead frame. The wide portion is electrically connected to the electrode layer by the conductive adhesive, and the wide portion is firmly adhered to the first insulating substrate, and the wide portion is insulated by the conductive adhesive. This is a temperature sensor in which the electrode terminals do not easily come off due to strong engagement with the layer.
【００１２】また、請求項４の発明は、前記脚柱部の前
記電極層との接着部に凹部を設けたことを特徴とする請
求項１，２又は３に記載の温度センサであり、前記脚柱
部の接着部と前記電極層とは導電性接着剤で接着され、
導電性接着剤は凹部に入り込み、前記脚柱部の接着部と
電極層との電気的接続が良好になるとともに、前記脚柱
部による電極端子が電極層と強固に接着されて容易に離
脱することがない温度センサである。According to a fourth aspect of the present invention, there is provided the temperature sensor according to any one of the first to third aspects, wherein a concave portion is provided in a bonding portion between the pillar portion and the electrode layer. The bonding portion of the pillar portion and the electrode layer are bonded with a conductive adhesive,
The conductive adhesive enters the concave portion, and the electrical connection between the bonding portion of the pillar portion and the electrode layer is improved, and the electrode terminal by the pillar portion is firmly bonded to the electrode layer and easily detached. It is a temperature sensor that does not have any.
【００１３】また、請求項５の発明は、前記リードフレ
ームの脚柱部の幅が前記電極層の幅よりも広いことを特
徴とする請求項１，２，３又は４に記載の温度センサで
あり、導電性接着剤によって、脚柱部と電極層とを接着
するとともに、脚柱部と第１の絶縁基板とを接着され、
電気的接続が良好であるとともに、脚柱部は第１の絶縁
基板と電極層と強固に接着されて容易に離脱することが
ない温度センサとなる。The invention according to claim 5 is the temperature sensor according to claim 1, wherein the width of the pillar portion of the lead frame is wider than the width of the electrode layer. Yes, the pillar and the electrode layer are bonded with the conductive adhesive, and the pillar and the first insulating substrate are bonded together.
The temperature sensor has good electrical connection and the pillar portion is firmly adhered to the first insulating substrate and the electrode layer and is not easily detached.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。本発明に係る温度センサの一実施
形態について、図１乃至図４を参照して説明する。図１
は本実施形態の温度センサの外観を示す斜視図、図２は
図１のＡ−Ａ′線に沿ったＡ−Ａ′断面図、図３（ａ）
は薄膜サーミスタチップの平面図であり、図３（ｂ）は
そのＡ−Ａ′断面図、図４は本実施形態の温度センサの
一製造工程を示す分解斜視図である。Embodiments of the present invention will be described below with reference to the drawings. One embodiment of a temperature sensor according to the present invention will be described with reference to FIGS. FIG.
FIG. 2 is a perspective view showing the appearance of the temperature sensor of the present embodiment, FIG. 2 is a sectional view taken along line AA ′ of FIG. 1, and FIG.
FIG. 3B is a plan view of the thin film thermistor chip, FIG. 3B is a sectional view taken along the line AA ′, and FIG. 4 is an exploded perspective view showing one manufacturing process of the temperature sensor of the present embodiment.
【００１５】図１は、本実施形態の温度センサの外観図
であり、絶縁性基板５，５′で電極端子３ａ，３ａ′を
絶縁性接着層１０で接着固定した構造である。電極端子
３ａ，３ａ′の先端部分には、図２に示すように、感熱
素子が形成されている。絶縁性基板５上には、温度変化
に対して電気抵抗が変化する感熱膜（サーミスタ）６
と、感熱膜６の電極層７，７′と、感熱膜６を保護する
保護絶縁膜８とが形成され、薄膜サーミスタチップが形
成されている。薄膜サーミスタチップの電極層７，７′
の電極部７ａ，７ａ′に外部引出用の電極端子３ａ，３
ａ′がそれぞれ導電性接着層９によって接着されてい
る。電極端子３ａ，３ａ′はリードフレームの脚柱部を
電極層７，７′に接着した後に切り出された脚柱部を外
部導出用の電極端子としている。なお、電極層７，７′
の幅は、電極端子３ａ，３ａ′の幅より狭いために、電
極層７，７′の全面を覆うように、電極端子３ａ，３
ａ′が接着されている。無論、電極端子３ａ，３ａ′の
先端部のみを接着してもよい。FIG. 1 is an external view of a temperature sensor according to the present embodiment, which has a structure in which electrode terminals 3a and 3a 'are adhered and fixed with insulating adhesive layers 10 on insulating substrates 5 and 5'. As shown in FIG. 2, a heat-sensitive element is formed at the tip of each of the electrode terminals 3a and 3a '. On the insulating substrate 5, a heat-sensitive film (thermistor) 6 whose electric resistance changes with temperature change
And the electrode layers 7, 7 'of the heat-sensitive film 6 and the protective insulating film 8 for protecting the heat-sensitive film 6, thereby forming a thin-film thermistor chip. Electrode layers 7, 7 'of thin film thermistor chip
Electrode terminals 3a, 3a for external extraction
a ′ are bonded by a conductive bonding layer 9. The electrode terminals 3a and 3a 'use the pillars cut out after bonding the pillars of the lead frame to the electrode layers 7 and 7' as electrode terminals for external derivation. The electrode layers 7, 7 '
Is narrower than the width of the electrode terminals 3a, 3a ', so that the electrode terminals 3a, 3a' cover the entire surface of the electrode layers 7, 7 '.
a 'is adhered. Of course, only the tips of the electrode terminals 3a and 3a 'may be bonded.
【００１６】更に、本実施形態に組み込まれる薄膜サー
ミスタチップの構成について、図３（ａ），（ｂ）を参
照して詳細に説明する。図３に於いて、サーミスタチッ
プ４は、絶縁基板５と、基板の一面に形成された電極層
７，７′と、電極層７，７′に接する感熱膜（サーミス
タ）６とからなる。絶縁基板５の寸法は、例えば、厚さ
が１００〜３００μｍ、長さが１．０〜１．６ｍｍ、幅
が０．５〜０．８ｍｍ程度である。絶縁基板５の材質は
アルミナ、ステアタイト等のセラミックス基板で構成さ
れている。絶縁基板５の一面上には電極層７，７′が対
向するように形成され、電極層７，７′の対向部分は抵
抗調整をし易くするために、櫛歯状に形成してもよい。
無論、櫛歯状に限定するものではない。そして、電極層
７，７′上に感熱膜６としてＳｉＣ又はマンガン、コバ
ルト、ニッケル等の金属酸化物等の材料がスパッタリン
グ等の公知薄膜形成技術によって形成されている。電極
層７，７′の外部引出用電極部７ａ，７a ′は、絶縁基
板５の幅よりも狭くなるように形成されている。感熱膜
６を形成した後、必要に応じて感熱膜６を保護するため
のパッシベーション膜として、例えば、酸化珪素、窒化
シリコン膜、またはオキシナイトライドシリコン膜等の
保護絶縁膜８が形成されている。Further, the configuration of the thin film thermistor chip incorporated in the present embodiment will be described in detail with reference to FIGS. 3 (a) and 3 (b). In FIG. 3, the thermistor chip 4 includes an insulating substrate 5, electrode layers 7, 7 'formed on one surface of the substrate, and a heat-sensitive film (thermistor) 6 in contact with the electrode layers 7, 7'. The dimensions of the insulating substrate 5 are, for example, about 100 to 300 μm in thickness, about 1.0 to 1.6 mm in length, and about 0.5 to 0.8 mm in width. The material of the insulating substrate 5 is a ceramic substrate such as alumina or steatite. The electrode layers 7, 7 'are formed on one surface of the insulating substrate 5 so as to face each other, and the opposing portions of the electrode layers 7, 7' may be formed in a comb-like shape to facilitate resistance adjustment. .
Of course, it is not limited to a comb tooth shape. A material such as SiC or a metal oxide such as manganese, cobalt, or nickel is formed as a heat-sensitive film 6 on the electrode layers 7, 7 'by a known thin-film forming technique such as sputtering. The external leading electrode portions 7a, 7a 'of the electrode layers 7, 7' are formed so as to be narrower than the width of the insulating substrate 5. After the heat-sensitive film 6 is formed, a protective insulating film 8 such as a silicon oxide, silicon nitride film, or oxynitride silicon film is formed as a passivation film for protecting the heat-sensitive film 6 as necessary. .
【００１７】なお、図３に示したサーミスタチップ４の
感熱膜６等の構造は、図３に限定するものではなく、例
えば、絶縁基板上に、先ず、感熱膜、更に、その上に電
極層を形成した構造であってもよい。更には、絶縁基板
上に、感熱膜−電極層−感熱膜のように、電極層が感熱
膜によって挟まれた積層構造であってもよいことは言う
までもない。The structure of the thermistor chip 4 shown in FIG. 3, such as the heat-sensitive film 6, is not limited to that shown in FIG. 3. For example, a heat-sensitive film is first formed on an insulating substrate, and then an electrode layer is formed thereon. May be formed. Further, needless to say, a laminated structure in which the electrode layer is sandwiched between the heat-sensitive films, such as a heat-sensitive film, an electrode layer, and a heat-sensitive film, may be provided on the insulating substrate.
【００１８】続いて、本実施形態に用いられるリードフ
レームについて、図５乃至図７を参照して説明する。図
５のリードフレーム１，１′は、コバール，ニッケル，
鉄，銅あるいはこれらの合金からなる金属板を、例えば
プレス等によって一連のフレーム状に打ち抜くか、写真
製版技術を用いたエッチングによって形成したものであ
り、スプロケット用の孔２を形成した帯状部３と、帯状
部３から直角方向に延びる複数の脚柱部３ａから構成さ
れている。因に、脚柱部３ａは帯状部３から切り離され
て電極端子となるので、電極端子３ａ，３ａ′と同一符
号を付与することとする。Next, a lead frame used in the present embodiment will be described with reference to FIGS. The lead frames 1, 1 'in FIG.
A metal plate made of iron, copper, or an alloy thereof is punched into a series of frames by, for example, a press or the like, or formed by etching using photoengraving technology. And a plurality of pillars 3 a extending in a direction perpendicular to the band 3. Incidentally, since the pillar 3a is separated from the strip 3 and becomes an electrode terminal, the same reference numeral as that of the electrode terminals 3a and 3a 'is given.
【００１９】リードフレーム１，１′は同一構造のリー
ドフレームであり、リードフレーム１，１′の脚柱部３
ａ，３ａ′が対向するように配置されている。リードフ
レーム１, １′が連結した構造であってもよい。また、
別々に形成したリードフレーム１，１′を使用する時
に、スプロケット用孔２を用いて脚柱部３ａ，３ａ′が
対向するように位置決めしてもよい。The lead frames 1, 1 'are lead frames having the same structure, and the pillars 3 of the lead frames 1, 1' are provided.
a, 3a 'are arranged to face each other. A structure in which the lead frames 1 and 1 'are connected may be employed. Also,
When the separately formed lead frames 1 and 1 'are used, the sprocket holes 2 may be used to position the pillar portions 3a and 3a' so as to face each other.
【００２０】図６に示すリードフレーム１, １′は、脚
柱部３ａ，３ａ′の先端部に幅広部３ｂ，３ｂ′が形成
された構造のリードフレームであり、図５とは脚柱部３
ａ，３ａ′の先端部が相違するがその他の形状は同一で
ある。幅広部３ｂ，３ｂ′を形成することで、幅広部３
ｂ，３ｂ′に導電性接着層９を被着することで、電極端
子を強固に固着できる効果がある。図７は、図６の幅広
部３ｂ，３ｂ′の、薄膜サーミスタの電極層と接触する
面に凹部３ｃ，３ｃ′が形成されたリードフレームであ
る。また、リードフレームは、図５のリードフレームの
脚柱部３ａ，３ａ′の先端に凹部３ｃ，３ｃ′を形成し
た構造であってもよい。凹部３ｃ，３ｃ′は、薄膜サー
ミスタの電極部との接合時に、半田や接着剤等の導電性
接着剤がその溝に溜まり、電極間の短絡を防止するとと
もに、電極部との接合を確実なものとする効果がある。A lead frame 1, 1 'shown in FIG. 6 is a lead frame having a structure in which wide portions 3b, 3b' are formed at the tip ends of pillar portions 3a, 3a '. 3
a, 3a 'are different, but the other shapes are the same. By forming the wide portions 3b and 3b ', the wide portion 3
By attaching the conductive adhesive layer 9 to b and 3b ', there is an effect that the electrode terminals can be firmly fixed. FIG. 7 shows a lead frame in which the concave portions 3c and 3c 'are formed on the surfaces of the wide portions 3b and 3b' in FIG. 6 which are in contact with the electrode layers of the thin film thermistor. Further, the lead frame may have a structure in which concave portions 3c, 3c 'are formed at the tips of the pillar portions 3a, 3a' of the lead frame of FIG. The concave portions 3c and 3c 'prevent the conductive adhesive such as solder or adhesive from being accumulated in the groove when the thin film thermistor is joined to the electrode portion, thereby preventing a short circuit between the electrodes and ensuring the joint with the electrode portion. There is an effect to be taken.
【００２１】次に、本発明の薄膜サーミスタの組み立て
手順を図４を参照して説明する。図４のリードフレーム
１, １′の先端部の幅広部３ｂ，３ｂ′に厚膜印刷の方
法か、または定量吐出器（図示なし）によって導電性接
着剤（図６を参照）が定量塗布される。導電性接着剤と
しては、例えば、比較的低温の用途で用いられる場合
は、合成樹脂を主体としたバインダと導電性フィラーを
結合させたものが用いられ、比較的高温の用途の場合は
バインダとして低融点ガラスを用い、これに有機べヒク
ル、金（Ａｕ），銀（Ａｇ）等の貴金属あるいは金属粉
末を分散させた金ペーストや銀ペースト等が用いられ
る。Next, the procedure for assembling the thin film thermistor of the present invention will be described with reference to FIG. The conductive adhesive (see FIG. 6) is applied to the wide portions 3b and 3b 'at the tips of the lead frames 1, 1' in FIG. 4 by a thick film printing method or a constant-rate dispenser (not shown). You. As the conductive adhesive, for example, when used in a relatively low-temperature application, a binder obtained by combining a binder mainly composed of a synthetic resin and a conductive filler is used. A low-melting glass is used, and a gold paste or a silver paste in which a precious metal such as an organic vehicle, gold (Au), or silver (Ag) or a metal powder is dispersed is used.
【００２２】リードフレーム１, １′の脚柱部３ａ，３
ａ′の先端部に導電性接着剤を塗布した部分が薄膜サー
ミスタチップ４の外部引出電極部７ａ，７ａ′に対応す
るように配置され、外部引出電極部７ａ，７ａ′とリー
ドフレーム１, １′の脚柱部３ａ，３ａ′が接着固定さ
れる。幅広部３ａ，３ａ′は外部引出電極部７ａ，７
ａ′と絶縁基板５の一部とともに接着される。サーミス
タチップ４をリードフレーム１, １′の幅広部３ａ，３
ａ′に接着固定した後、サーミスタチップ４の感熱部側
にガラスペーストあるいは樹脂等の絶縁性接着層１０を
一定量塗布して前記絶縁基板５とほぼ同形状のアルミナ
等の絶縁基板５′を重ね合わせる。その後、ガラスペー
ストは高温で溶融させるか、あるいは樹脂の場合は加熱
硬化させて、絶縁基板５，５′が接着される。最後にリ
ードフレームの帯状部３を切断して、図１の温度センサ
が形成される。なお、導電性接着剤を脚柱部３ａ，３
ａ′に塗布する面は、上記のような先端部のみならず電
極層７ａ，７ａ′に接する面全面としてもよいことは明
らかである。The pillars 3a, 3 of the lead frames 1, 1 '
The portion of the thin film thermistor chip 4 where the conductive adhesive has been applied to the tip of the thin film thermistor chip 4 is arranged so as to correspond to the external extraction electrode portions 7a, 7a ', and the external extraction electrode portions 7a, 7a' and the lead frames 1, 1 'Are fixedly adhered to the pillar portions 3a, 3a'. The wide portions 3a, 3a 'are external extraction electrode portions 7a, 7
a ′ and a part of the insulating substrate 5. Connect the thermistor chip 4 to the wide portions 3a, 3 of the lead frames 1, 1 '.
After affixed to a ′, an insulating adhesive layer 10 such as a glass paste or a resin is applied on the heat-sensitive portion side of the thermistor chip 4 in a fixed amount to form an insulating substrate 5 ′ made of alumina or the like having substantially the same shape as the insulating substrate 5. Overlap. Thereafter, the glass paste is melted at a high temperature or, in the case of a resin, cured by heating, and the insulating substrates 5 and 5 'are bonded. Finally, the strip 3 of the lead frame is cut to form the temperature sensor of FIG. Note that the conductive adhesive is applied to the pillar portions 3a, 3
It is clear that the surface to be applied to a ′ may be not only the above-mentioned tip portion but also the entire surface in contact with the electrode layers 7a and 7a ′.
【００２３】本実施形態の温度センサでは、電極端子部
に剥離する力が働いた場合、力の一部は基板５や幅広部
３ｂ，３ｂ′の接合部分に分散されるために、従来のよ
うな電極層と外部導出用の電極端子（リード部）のみと
の接着の場合と比べて剥離強度を高めることができた。In the temperature sensor according to the present embodiment, when a peeling force acts on the electrode terminal portion, a part of the force is dispersed to the joint portion between the substrate 5 and the wide portions 3b and 3b '. The peel strength could be increased as compared with the case of bonding only the electrode layer and the external lead-out electrode terminal (lead portion).
【００２４】また、本実施形態では、リード部と基板面
との接着性を高めるために、図７に示したようなリード
部の一部に凹部３ｃ，３ｃ′が形成されている。この凹
部３ｃ，３ｃ′に導電性接着剤が入り込む構造とするこ
とにより、外部導出用の電極端子とサーミスタチップの
電極層との電気的接続が高められるとともに、接着強度
が高められる。即ち、凹部３ｃ，３ｃ′に導電性接着剤
が入り込み、導電性接着剤のはみ出す部分は外部導出用
の電極端子と絶縁基板とを接着し、外部導出用の電極端
子とサーミスタチップの電極層との接着強度が高められ
ている。無論、導電性接着剤を加熱硬化もしくは高温焼
成してリードフレームと、サーミスタチップの電極層と
の電気的接続と構造的強度を高めるようにしてもよい。In this embodiment, recesses 3c and 3c 'are formed in a part of the lead portion as shown in FIG. 7 in order to enhance the adhesion between the lead portion and the substrate surface. By adopting a structure in which the conductive adhesive enters the recesses 3c and 3c ', the electrical connection between the external lead-out electrode terminal and the electrode layer of the thermistor chip is enhanced, and the adhesive strength is enhanced. That is, the conductive adhesive enters the recesses 3c, 3c ', and the protruding portion of the conductive adhesive is bonded to the electrode terminal for external lead and the insulating substrate, and the electrode terminal for external lead and the electrode layer of the thermistor chip are connected to each other. Has increased adhesion strength. Of course, the conductive adhesive may be hardened or baked at a high temperature to increase the electrical connection and the structural strength between the lead frame and the electrode layer of the thermistor chip.
【００２５】また、図５に示すようなリードフレーム
１, １′の先端部が直線的な形状のリードフレームで
は、サーミスタチップの外部引出電極部７ａ，７ａ′の
幅、即ち、電極層７，７′の幅に比べてリードフレーム
１，１′の脚柱部３ａ，３ａ′の幅を広くすることによ
って、外部引出電極部７ａ，７ａ′と脚柱部３ａ，３
ａ′の接着時に、脚柱部３ａ，３ａ′が外部引出電極部
７ａ，７ａ′と同時に絶縁基板５とともに接着固定され
る。そこで、図５のリードフレーム１, １′であっても
図６のリードフレームの場合と同様に、従来の電極層の
みと脚柱部が接着されている構造に比べてチップと電極
端子（リード部）との剥離強度を高めることができる。
なお、外部引出電極部７ａ，７ａ′は脚柱部（電極端
子）との接着部であり、サーミスタチップの電極層７，
７′の幅と同一と見做し得る。In a lead frame in which the leading ends of the lead frames 1 and 1 'are linear as shown in FIG. 5, the width of the external lead-out electrode portions 7a and 7a' of the thermistor chip, that is, the electrode layers 7 and 7 '. By making the width of the pillar portions 3a, 3a 'of the lead frames 1, 1' larger than the width of the lead frame portions 7 ', the external extraction electrode portions 7a, 7a' and the pillar portions 3a, 3 are increased.
At the time of bonding a ', the pillar portions 3a, 3a' are bonded and fixed together with the insulating substrate 5 at the same time as the external extraction electrode portions 7a, 7a '. Therefore, the lead frames 1, 1 'in FIG. 5 are similar to the lead frame in FIG. 6 in that the chip and the electrode terminals (leads) are different from the conventional structure in which only the electrode layer and the pillar are bonded. Part) can be increased in peel strength.
Note that the external extraction electrode portions 7a and 7a 'are bonding portions to the pillar portions (electrode terminals), and the electrode layers 7 and 7 of the thermistor chip.
It can be regarded as the same as the width of 7 '.
【００２６】本発明の温度センサについて、引張強さの
試験を行って、図５のリードフレームを用いた温度セン
サと、図７の従来の温度センサとの比較を行った。引張
強さの試験は、ＪＩＳ Ｃ００５１の「端子強度試験方
法」の試験Ｕa1に準拠して行った。この試験では、従来
の温度センサでは、約１００ｇの荷重に耐え得ることが
できたのに対して、本発明の温度センサでは約１０００
ｇの荷重に耐えることができた。本発明の温度センサ
は、従来の温度センサに比べて大きな改善効果が得られ
ることが立証された。The temperature sensor of the present invention was tested for tensile strength, and a comparison was made between the temperature sensor using the lead frame shown in FIG. 5 and the conventional temperature sensor shown in FIG. The test of the tensile strength was carried out in accordance with the test Ua1 of "Terminal strength test method" of JIS C0051. In this test, the conventional temperature sensor was able to withstand a load of about 100 g, while the temperature sensor of the present invention was able to withstand a load of about 1000 g.
g load. It has been proved that the temperature sensor of the present invention can obtain a great improvement effect as compared with the conventional temperature sensor.
【００２７】なお、本発明の温度センサでは、リードフ
レームの帯状部を切り離した状態で出荷される場合と、
帯状部が接続した状態で出荷される場合があり、後者の
場合は、顧客が帯状部を切り離して使用する。本発明の
温度センサは、このいずれの温度センサをも含むもので
ある。In the temperature sensor of the present invention, the case where the lead frame is shipped in a state where the strip portion of the lead frame is cut off,
In some cases, the strip is shipped with the strip connected, and in the latter case, the customer separates and uses the strip. The temperature sensor of the present invention includes any of these temperature sensors.
【００２８】[0028]
【発明の効果】上述のように、本発明は、リード線（電
極端子）をリードフレーム化した薄膜サーミスタによる
温度センサであって、リードフレームに薄膜サーミスタ
チップを接続した後に、薄膜サーミスタチップと同形状
の絶縁基板によって、リードフレームを挟み込むよう
に、ガラスや樹脂等の絶縁性接着剤で挟持固定したもの
であり、温度センサの電極端子の引っ張り強度を高める
ことができるとともに、耐湿性、耐水性等の耐環境性に
対する信頼性の高い温度センサが提供できる利点があ
る。As described above, the present invention relates to a temperature sensor using a thin-film thermistor in which lead wires (electrode terminals) are formed into a lead frame, and after connecting the thin-film thermistor chip to the lead frame, the temperature sensor becomes the same as the thin-film thermistor chip. The lead frame is sandwiched and fixed with an insulating adhesive such as glass or resin, so that the lead frame is sandwiched between the insulating substrates.The tensile strength of the electrode terminals of the temperature sensor can be increased, as well as moisture resistance and water resistance. There is an advantage that it is possible to provide a highly reliable temperature sensor for environmental resistance such as the above.
【００２９】また、本発明によれば、薄膜サーミスタチ
ップの電極層の外部引出電極部の幅をリードフレームの
脚柱部の幅よりも狭くして、リードフレームとサーミス
タチップの電極部との接着時に、サーミスタチップの基
板部と電極部を一緒に接着することで、引っ張り強度を
従来よりも高めることができる利点があるとともに、リ
ードフレームを使用することにより、寸法精度が高く、
全工程を自動化して生産性が向上できる利点があり、形
状寸法のばらつきをなくすことができる利点がある。Further, according to the present invention, the width of the external lead-out electrode portion of the electrode layer of the thin film thermistor chip is made smaller than the width of the pillar portion of the lead frame, thereby bonding the lead frame to the electrode portion of the thermistor chip. Occasionally, by bonding the thermistor chip substrate and electrode together, there is an advantage that the tensile strength can be increased more than before, and by using a lead frame, dimensional accuracy is high,
There is an advantage that productivity can be improved by automating all processes, and there is an advantage that variations in shape and dimensions can be eliminated.
【００３０】また、本発明によれば、リードフレームの
脚柱部の先端に凹部を形成した構造とすることで、リー
ドフレームの脚柱部とサーミスタチップの電極部の接着
強度が増し、電極部に加わる応力を軽減することができ
るとともに、絶縁基板でリードフレームの脚柱部とサー
ミスタチップとを固定することで、温度センサの電極端
子の引っ張り強度を一層高めることができる効果を有す
る。Further, according to the present invention, by forming a concave portion at the tip of the pillar portion of the lead frame, the adhesive strength between the pillar portion of the lead frame and the electrode portion of the thermistor chip is increased, and the electrode portion is formed. In addition to the effect of reducing the stress applied to the temperature sensor, fixing the pillars of the lead frame and the thermistor chip with the insulating substrate can further increase the tensile strength of the electrode terminals of the temperature sensor.
【図１】本発明に係る温度センサの実施形態の外観を示
す斜視図である。FIG. 1 is a perspective view showing an appearance of an embodiment of a temperature sensor according to the present invention.
【図２】図１のＡ−Ａ′線に沿ったＡ−Ａ′断面図であ
る。FIG. 2 is a sectional view taken along line AA ′ of FIG. 1;
【図３】（ａ）はサーミスタチップの平面図、（ｂ）は
図３（ａ）のＡ−Ａ′線に沿ったＡ−Ａ′断面図であ
る。3A is a plan view of the thermistor chip, and FIG. 3B is a cross-sectional view taken along line AA ′ of FIG. 3A.
【図４】図１の実施形態の温度センサの一製造過程を示
す分解斜視図である。FIG. 4 is an exploded perspective view showing one manufacturing process of the temperature sensor of the embodiment of FIG. 1;
【図５】本発明に係る温度センサの一実施形態に用いら
れるリードフレームの要部を示す斜視図である。FIG. 5 is a perspective view showing a main part of a lead frame used in an embodiment of the temperature sensor according to the present invention.
【図６】本発明に係る温度センサの他の実施形態に用い
られるリードフレームの要部を示す斜視図である。FIG. 6 is a perspective view showing a main part of a lead frame used in another embodiment of the temperature sensor according to the present invention.
【図７】本発明に係る温度センサの他の実施形態に用い
られるリードフレームの要部を示す斜視図である。FIG. 7 is a perspective view showing a main part of a lead frame used in another embodiment of the temperature sensor according to the present invention.
【図８】従来の薄膜サーミスタの一例を示す斜視図であ
る。FIG. 8 is a perspective view showing an example of a conventional thin film thermistor.
【図９】従来の薄膜サーミスタの他の例を示す平面図で
ある。FIG. 9 is a plan view showing another example of a conventional thin film thermistor.
１，１′ リードフレーム ２ スプロケット用孔 ３ 帯状部 ３ａ，３ａ′ 脚柱部（電極端子） ３ｂ，３ｂ′ 幅広部 ３ｃ，３ｃ′ 凹部 ４ 薄膜サーミスタチップ ５，５′ 絶縁基板 ６ 感熱膜 ７，７′ 電極層 ７ａ，７ａ′ 外部引出電極部 ８ 保護絶縁膜 ９ 導電性接着層 １０ 絶縁性接着層 1, 1 'Lead frame 2 Sprocket hole 3 Strip 3a, 3a' Pillar (electrode terminal) 3b, 3b 'Wide part 3c, 3c' Concave part 4 Thin film thermistor chip 5, 5 'Insulating substrate 6 Heat sensitive film 7, 7 'electrode layer 7a, 7a' external lead-out electrode section 8 protective insulating film 9 conductive adhesive layer 10 insulating adhesive layer
Claims (5)
前記感熱膜に接する一対の電極層とを有する薄膜サーミ
スタチップと、 前記第１の絶縁基板と略同一形状の第２の絶縁基板と、 リードフレームの脚柱部先端を前記電極層に接着した後
に、前記第１の絶縁基板と前記第２の絶縁基板とで前記
脚柱部を挟むように接着固定する絶縁性接着層と、 前記リードフレームから切り出された脚柱部による外部
導出用のリード線である電極端子と、 を具備することを特徴とする温度センサ。1. A thin-film thermistor chip having a heat-sensitive film formed on a surface of a first insulating substrate and a pair of electrode layers in contact with the heat-sensitive film, and a second insulating material having substantially the same shape as the first insulating substrate. A substrate, and an insulating adhesive layer that adheres and fixes the tip of the pillar portion of the lead frame to the electrode layer, and then fixes the pillar portion between the first insulating substrate and the second insulating substrate. A temperature sensor comprising: an electrode terminal that is a lead wire for external derivation by a pillar section cut out from the lead frame.
して延びる脚柱部とからなるリードフレームと、 第１の絶縁基板面に形成された感熱膜と前記感熱膜に接
する一対の電極層とを有する薄膜サーミスタチップと、 前記電極層に前記脚柱部の先端が前記一対の電極層に導
電性接着剤によって接着され、前記第１の絶縁基板と第
２の絶縁基板とによって前記脚柱部を挟むように接着固
定する絶縁性接着層と、 を備えることを特徴とする温度センサ。2. A lead frame comprising first and second strips and a pillar extending from each strip, and a heat-sensitive film formed on a first insulating substrate surface and in contact with the heat-sensitive film. A thin-film thermistor chip having a pair of electrode layers; and a tip of the pillar portion bonded to the electrode layer by a conductive adhesive to the pair of electrode layers; and a first insulating substrate and a second insulating substrate. And an insulating adhesive layer that is adhered and fixed so as to sandwich the pillar portion with the temperature sensor.
広部を形成したことを特徴とする請求項１又は２に記載
の温度センサ。3. The temperature sensor according to claim 1, wherein a wide portion is formed at a tip of a pillar portion of the lead frame.
部を設けたことを特徴とする請求項１，２又は３に記載
の温度センサ。4. The temperature sensor according to claim 1, wherein a concave portion is provided in a bonding portion of the pillar portion with the electrode layer.
電極層の幅よりも広いことを特徴とする請求項１，２，
３又は４に記載の温度センサ。5. The lead frame according to claim 1, wherein a width of a pillar portion of the lead frame is larger than a width of the electrode layer.
The temperature sensor according to 3 or 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24611196A JP3819081B2 (en) | 1996-09-18 | 1996-09-18 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24611196A JP3819081B2 (en) | 1996-09-18 | 1996-09-18 | Temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1092607A true JPH1092607A (en) | 1998-04-10 |
| JP3819081B2 JP3819081B2 (en) | 2006-09-06 |
Family
ID=17143655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24611196A Expired - Lifetime JP3819081B2 (en) | 1996-09-18 | 1996-09-18 | Temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3819081B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086453A (en) * | 2001-09-13 | 2003-03-20 | Denso Corp | Mounting structure for electrical element |
| KR100481929B1 (en) * | 2002-06-18 | 2005-04-11 | 쌍신전자통신주식회사 | Temperature Sensor Using Thermistor Thin Film and Process of The Same |
| JP2008026199A (en) * | 2006-07-24 | 2008-02-07 | Matsushita Electric Ind Co Ltd | Temperature sensor and heated toilet seat equipped therewith |
| JP2008026200A (en) * | 2006-07-24 | 2008-02-07 | Matsushita Electric Ind Co Ltd | Temperature sensor and heated toilet seat equipped therewith |
| JP2012079976A (en) * | 2010-10-04 | 2012-04-19 | Semitec Corp | Thin film thermistor |
| JP2012182258A (en) * | 2011-02-28 | 2012-09-20 | Mitsubishi Materials Corp | Non-contact power supply device with temperature sensor |
| CN106556472A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Temperature sensor |
-
1996
- 1996-09-18 JP JP24611196A patent/JP3819081B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086453A (en) * | 2001-09-13 | 2003-03-20 | Denso Corp | Mounting structure for electrical element |
| KR100481929B1 (en) * | 2002-06-18 | 2005-04-11 | 쌍신전자통신주식회사 | Temperature Sensor Using Thermistor Thin Film and Process of The Same |
| JP2008026199A (en) * | 2006-07-24 | 2008-02-07 | Matsushita Electric Ind Co Ltd | Temperature sensor and heated toilet seat equipped therewith |
| JP2008026200A (en) * | 2006-07-24 | 2008-02-07 | Matsushita Electric Ind Co Ltd | Temperature sensor and heated toilet seat equipped therewith |
| JP2012079976A (en) * | 2010-10-04 | 2012-04-19 | Semitec Corp | Thin film thermistor |
| JP2012182258A (en) * | 2011-02-28 | 2012-09-20 | Mitsubishi Materials Corp | Non-contact power supply device with temperature sensor |
| CN106556472A (en) * | 2016-11-23 | 2017-04-05 | 合肥舒实工贸有限公司 | Temperature sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3819081B2 (en) | 2006-09-06 |
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