JPH1092305A - Forming method for thick film pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the processing time and make it sure that the formed thick film pattern is free from chips forming the thick film pattern by means of a sand blasting method. SOLUTION: A pattern formation layer 2 which contains at least glass firts is formed on a substrate 1, and a mask 4 for sand blasting of a prescribed pattern is formed on the pattern formation layer 2 after prebaking the pattern formation layer 2 in the temperatures range from a temperature 20 deg.C below the yield point of grass frit and a temperature 20 deg.C above that, and the pattern formation layer 2 subjected to patterning is baked after grinding such part of the layer 2 where the mask 5 for sand blasting is not formed by a sand blasting method and pealing off the mask 5 for sand blasting. A resin component contained in a pattern forming material is burnt out and accordingly the glass frits are favorably fused together, resulting in an increase in the processing speed for sand blasting and no chips in the formed thick film pattern.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a process for manufacturing a plasma display panel (PDP), a field emission display (FED), a liquid crystal display (LCD), a fluorescent display, a hybrid integrated circuit, or the like. The present invention relates to a method for forming a thick film pattern.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a thick film pattern of this type, a method of applying a paste for a conductor or an insulator on a glass or ceramic substrate in a pattern by screen printing has been known. In this way, for example, line width 1
When forming a thin line of 00 μm and a height of 100 μm, it was necessary to repeat overprinting by screen printing a plurality of times. As another method, as described in JP-B-7-22893, after forming a pattern forming layer on the entire surface of the substrate, a sandblast mask is formed on the pattern forming layer with a photosensitive resist, Further, a method of patterning a pattern forming layer by a sandblast method is known.

[0003]

However, in the former method of forming a pattern by screen printing, it is difficult to accurately form a fine line having a line width of 100 μm or less due to restrictions on the manufacturing method of the screen printing method. In addition, in order to increase the film thickness, a complicated process of repeating lamination several times is required. In the latter method of forming a pattern by sandblasting, there is a problem in the processing speed, and especially in the case of a large-sized substrate having a side of 50 cm or more, the processing time per substrate requires several tens of minutes. In order to increase the grinding speed of the pattern forming layer, the impact force of the abrasive may be increased, for example, by increasing the injection pressure of the abrasive or bringing the injection nozzle closer to the substrate. However, while the grinding speed increases, damage to the photosensitive resist is large, and in practice, patterning of low-melting glass induces defects, and in particular, there is a problem that disconnection frequently occurs when the fine line becomes a fine line pattern of 100 μm or less. is there. Further, there is also a problem that a part of the pattern forming material is removed together when the sandblasting mask is peeled off, so that the pattern surface is not smooth.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a method for forming a thick film pattern by a sandblasting method. It is another object of the present invention to provide a method of forming a thick film pattern which can shorten the time required for processing and does not affect the pattern surface when the mask is peeled off.

[0005]

In order to achieve the above object, a method of forming a thick film pattern according to the present invention comprises a first step of forming a pattern forming layer containing at least glass frit on a substrate; A second step of pre-baking the pattern forming layer with a peak in a range of a temperature 20 ° C. lower than the deformation point to a temperature higher by 20 ° C. than the deformation point, and forming a sandblast mask having a predetermined pattern on the pattern forming layer. A third step, a fourth step of grinding a portion of the pattern forming layer where the sand blast mask is not formed by a sand blast method, and peeling off the sand blast mask, and firing the patterned pattern forming layer. And a fifth step.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION Substrates which can be used in the present invention include glass, metal, ceramic and the like. Further, the pattern forming material used in the present invention,
It contains at least a glass frit. For example, in the case of a PDP barrier, it is composed of at least glass frit and ceramic powder, and in the case of an electrode, it is composed of glass frit and metal powder. Hereinafter, embodiments of the present invention will be described with reference to an example in which a barrier of a PDP is formed.

The glass frit has a softening point of 400.
６００600 ° C., coefficient of thermal expansion α ₃₀₀ = 60-100 × 10 ^-7
/ ° C can be preferably used. If the softening point is lower than 400 ° C., it is difficult to burn off the resin component by preliminary firing. . Further, when the coefficient of thermal expansion is out of the above range, distortion occurs, which is not preferable.

As the ceramic powder used for the barrier forming material, alumina, silica, titanium oxide, zirconia, zircon, calcium carbonate, calcium oxide, magnesium oxide and the like are used. The average particle size of the ceramic powder used is preferably 0.01 to 5 μm.

If necessary, a pigment can be added to the barrier forming material. To darken the barrier, Co-Cr
-Fe, Co-Mn-Fe, Co-Fe-Mn-Al,
Co-Ni-Cr-Fe, Co-Ni-Mn-Cr-F
e, Co-Ni-Al-Cr-Fe, Co-Mn-Al
-Use an inorganic pigment such as Cr-Fe-Si. On the other hand, when it is better to make the barrier white in order to effectively guide the emission of the phosphor to the front of the panel, titania (TiO ₂ ) or the like is used as a fire-resistant white pigment. Sometimes not used.

As the binder polymer of the barrier paste, vinyl acetic acid, methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate,
n-propyl acrylate, n-propyl methacrylate, isopropyl acrylate, isopropyl methacrylate, n-butyl acrylate, n-butyl methacrylate, sec-butyl acrylate, sec-butyl methacrylate, isobutyl acrylate, isobutyl methacrylate, tert-butyl acrylate, te
rt-butyl methacrylate, n-pentyl acrylate, n-pentyl methacrylate, n-hexyl acrylate, n-hexyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, n-octyl acrylate, n-octyl methacrylate, n-decyl acrylate, a polymer comprising at least one of n-decyl methacrylate, 2-hydroxyethyl acrylate, 2-hydroxy methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, styrene, α-methylstyrene, and N-vinyl-2-pyrrolidone; Polystyrene resin such as copolymer, styrene-propylene copolymer, styrene-butadiene copolymer, styrene-isoprene copolymer, ethyl cellulose Hydroxypropyl cellulose, cellulose derivatives such as methyl cellulose, ethylene - (meth) acrylic acid ester copolymer, ethylene -
Polyolefin resins such as vinyl acetate copolymers and the like can be mentioned.

Examples of the solvent include anones such as methanol, ethanol, isopropanol, acetone, methyl ethyl ketone, toluene, xylene and cyclohexanone;
Methylene chloride, 3-methoxybutyl acetate, ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, diethylene glycol monoalkyl ethers, diethylene glycol monoalkyl ether acetates, terpenes such as α- or β-terpineol, propylene glycol mono Examples thereof include alkyl ethers, dipropylene glycol monomethyl ethers, propylene glycol monoalkyl ether acetates, and dipropylene glycol monomethyl ether acetates (two or more kinds may be mixed).

The barrier paste can be applied to the substrate by screen printing, roll coating, slip coating,
A doctor blade coat, a gravure coat, a die coat and the like can be mentioned. Alternatively, a sheet formed by applying a barrier paste to a film in advance may be used, and the sheet may be pressure-bonded and laminated on a substrate while heating, and only the film may be peeled off to form a barrier forming layer.

The preliminary formation of the barrier forming layer is performed with a peak in a temperature range from a temperature lower by 20 ° C. than the deformation point of the glass frit to a temperature higher by 20 ° C. than the deformation point. That is, 20
When firing at a temperature lower than ℃ as a peak, the glass frit in the rib paste does not bind, making it difficult to maintain the pattern after sand blasting.When firing at a temperature higher than the deformation point by 20 ° C or more as a peak, the glass frit binds. Too slow sandblasting speed.

[0014] Incidentally, the yield point of the glass in terms begin to soften contracted by a load according to its own weight and its viscosity is 10 ¹¹
It is considered that the temperature is about 10 to 10 ¹² poise.
Generally, thermomechanical analysis (TMA)
sis), and in this application, it was measured using DL-9600 (manufactured by Vacuum Riko Co., Ltd.). Since the device measures the expansion of the measurement sample by heating, the measurement result may be different due to distortion of the sample or the like. Therefore, a sample is prepared by baking the frit-like glass once and molding it according to the apparatus. At this time, it is necessary to sufficiently cool the glass so that no distortion remains in the sample. Using the sample thus prepared, the yield point is measured by the above-mentioned apparatus.

[0015]

An embodiment will be described below with reference to FIG.

First, as shown in FIG. 1A, a barrier paste having the following composition is applied on a glass substrate 1 by a blade coater and dried at 120 ° C. for 15 minutes to form a barrier forming layer 2 having a thickness of 150 μm. Was formed.

<Composition> Glass frit: MB-008 (Matsunami Glass Industry) 65 wt% Yield point 500 ° C. Pigment: Dipiroxide Black # 9510 (Dainichi Seika Kogyo) 10 wt% Ceramic powder: α-alumina RA-40 ( Iwatani Chemical Industry) 10 wt% Binder: Ethocel STD-100 (Dow Chemical) 3 wt% Solvent: Terpineol 12 wt%

Then, five same samples in which the barrier forming layer 2 was formed on the glass substrate 1 were prepared.
Preliminary calcination was performed at 0 ° C, 480 ° C, 500 ° C, 520 ° C and 540 ° C for 3 hours. Thereby, the resin component in the barrier paste was burned off. For comparison, a sample of only drying (120 ° C.) without calcination was also prepared.

Next, a sandblast mask was formed for each sample. Specifically, the substrate is heated to 50 to 80 ° C.
Then, a dry film resist 3 was laminated on the barrier forming layer 2 as shown in FIG. 1B, and the dry film resist 3 was exposed through a line pattern mask 4. Here, after laminating a photocurable dry film (“OSBR film” manufactured by Tokyo Ohka Kogyo Co., Ltd.), a parallel light printer using a super high pressure mercury lamp as a light source is used, and a line pattern mask 4 having a line width of 60 μm and a pitch of 120 μm is used. Pattern exposure using ultraviolet light. The exposure condition is that when measured at 365 nm, the irradiation amount is 7
0 mJ / cm ² . Next, spray development was performed at a liquid temperature of 30 ° C. using a 0.2 wt% aqueous solution of anhydrous sodium carbonate. Through the above steps, as shown in FIG.
A sand blast mask 5 having a line width of 60 μm and a pitch of 120 μm was obtained.

After that, each sample was subjected to a drying step, and then unnecessary portions of the barrier forming layer 2 were removed by sandblasting as shown in FIG. here,
Sandblasting was performed at an injection pressure of 1 kg / cm ² using brown fused alumina # 800 as an abrasive to obtain a barrier pattern having a line width of 60 μm, a pitch of 120 μm, and a height of 150 μm. Next, as shown in FIG. 1E, the sandblasting mask was peeled off using a peeling solution. After the peeling step, the peak temperature is 570.
The firing was performed under the conditions of a temperature of 10 ° C. and a holding time of 10 to 20 minutes, and the barrier forming layer 2 in a pattern was bonded to the glass substrate 1 to complete the barrier.

Table 1 shows the shape of the pattern in each sample thus obtained. In addition, in order to check the grinding speed of each sample, the grinding depth was measured by sand blast fixed point punching in the preliminary firing stage. That is, after stopping the feed speed of the substrate, the nozzle distance: 120 mm, the powder supply amount: 35 g / min, the air pressure: 3.0 kg / cm ² ,
Scan speed: 10 m / min, number of scans: 1.5
Reciprocating, abrasive: After scanning the nozzle in one direction under the condition of alumina, the grinding depth was measured by DEKTAK. The measurement results are shown in Table 1 assuming that a sample obtained by drying at 120 ° C. only and not temporarily calcined was 1.0.

[0022]

[Table 1]

As can be seen from Table 1, the yield point (500
When the pre-baking was performed at a temperature 20 ° C. lower than (° C.) to 20 ° C. higher than the yield point, the shape of the barrier was good and the grinding speed was high. In the case of a material in which the resin component remains only after drying, the grinding speed is low, and the pattern may be chipped when the sandblast mask is peeled off. Also, when calcined at a temperature lower by 40 ° C. than the yield point, the resin content does not remain, so the grinding speed is high, but it is difficult to maintain the pattern shape. However, the grinding speed was remarkably reduced, and it was difficult to form a pattern.

[0024]

As described above, in the method of forming a thick film pattern according to the present invention, when forming a thick film pattern by a sandblasting method, at least a pattern forming layer containing a glass frit is formed before forming a sandblasting mask. The pre-firing is performed at a temperature range of 20 ° C. lower than the sagging point of the glass frit to 20 ° C. higher than the sagging point as a peak. Since the frit is appropriately fused, the processing speed of sandblasting is increased, and a thick film pattern with no chips can be formed. In addition, since the resin component in the pattern forming material does not strongly adhere to the sandblasting mask due to the temporary baking, the pattern forming material is not removed when the sandblasting mask is peeled off, and a smooth thick film pattern on the top is formed. Can be formed.

Further, even if the amount of resin is large, the resin is burned off by calcination, so that a material having good dispersion stability can be used as a pattern forming material, and the range of applicable coating methods can be widened.

[Brief description of the drawings]

FIG. 1 is a process chart showing an example of a barrier forming method according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Barrier formation layer 3 Dry film resist 4 Line pattern mask 5 Sandblast mask

Claims (3)

[Claims] 1. A first step of forming a pattern forming layer containing at least a glass frit on a substrate, wherein the temperature is 20 ° C. lower than the sagging point of the glass frit to 20 ° C.
A second step of pre-firing the pattern formation layer with a peak in the range of a high temperature of ℃, a third step of forming a sand blast mask of a predetermined pattern on the pattern formation layer, and a step of sand blasting the pattern formation layer. A thickness comprising at least a fourth step of grinding a portion where the sandblasting mask is not formed, and a fifth step of peeling the sandblasting mask and subjecting the patterned pattern formation layer to full firing. A method for forming a film pattern. 2. The method according to claim 1, wherein the step of forming the pattern forming layer on the substrate comprises the step of applying a pattern forming material.
3. The method for forming a thick film pattern according to 1. 3. The thickness according to claim 1, wherein the step of forming a pattern forming layer on the substrate comprises a step of laminating a sheet formed by applying a pattern forming material to the film in advance on the substrate and peeling off only the film. A method for forming a film pattern.