JPH1079461A - Semiconductor integrated circuit device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a thin-type semiconductor integrated circuit device and enable batch processing at manufacturing method thereof. SOLUTION: An integrated circuit device comprises a ceramic substrate 2 having a plane 2a for mounting a semiconductor element 1 and non-mounting plane 2b opposite thereto, a first insulation member 11 which has a first bonding plane 11a to be bonded to the element mounting plane 2a and a second bonding plane 11b opposite thereto and is buried in the periphery 3 of the semiconductor element 1. A second insulation member 5 having an exposed plane 5b, first and second thin-film extracting electrodes 4a and 4b formed on the element- mounting plane 2a and the second bonding plane 11b, and a thin-film outer terminal 6 defined by the non-mounting plane 2b and exposed plane 5b. The second bonding plane 11b of the first member 11 is made by polishing after being buried in the periphery 3 of the element 1, and the surface electrode 1b of the element 1 exposed by the polishing is electrically connected to the second electrode 4b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly, to a surface-mount type semiconductor integrated circuit device which is miniaturized and a method of manufacturing the same.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

A diode (also referred to as a chip diode) having a semiconductor element mounted thereon, which is an example of a surface-mount type semiconductor integrated circuit device, includes a DHD (double head diode) comprising a lead wire, a semiconductor element (pellet), and a glass sleeve. And a resin-sealed diode in which an electrode of a semiconductor element fixed on a lead frame and a lead frame are connected by wire bonding, and thereafter the semiconductor element is sealed with a resin or the like.

Further, a semiconductor integrated circuit device which does not perform wire bonding has been devised.

The structure of a two-pole diode (a structure without wire bonding), which is a surface-mount type semiconductor integrated circuit device, and a method of manufacturing the same are described in, for example, JP-A-61-108153 and JP-A-6-108153. -14955
No., published in Japanese Unexamined Patent Publication No.

[0006]

However, in the above-mentioned technology, since the semiconductor integrated circuit device to which wire bonding is performed has metal wires by wire bonding, the height of the arch of the metal wires and the thickness of the semiconductor element are increased. Alternatively, the thickness of the appearance is determined by both of them.

As a result, there is a problem that it is difficult to further downsize (thin) a semiconductor integrated circuit device such as a diode.

It is an object of the present invention to provide a semiconductor integrated circuit device which is thin and enables batch processing, and a method of manufacturing the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0010]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, a semiconductor integrated circuit device according to the present invention comprises an element mounting substrate having an element mounting surface on which a semiconductor element is mounted and a non-element mounting surface on the opposite side, and bonding to the element mounting surface of the element mounting substrate. A first insulating member having a first bonding surface to be formed and a second bonding surface opposite to the first bonding surface and embedded in a peripheral portion of the semiconductor element; and an exposed surface opposite to the non-element mounting surface of the element mounting substrate. A second insulating member provided;
At least two thin films formed in directions opposite to each other on an element mounting surface of the element mounting substrate and a second bonding surface of the first insulating member, and electrically connected to front and back electrodes of the semiconductor element, respectively. A thin film external terminal electrically connected to the thin film extracting electrode and formed on at least one of the non-element mounting surface and the exposed surface.

Thus, since the front and back electrodes of the semiconductor element and the thin film lead-out electrode are connected without using a metal wire and the first insulating member is embedded in the periphery of the semiconductor element, the use of the metal wire is avoided. Is completely covered by the first insulating member, the height of the arch formed by the metal wire can be removed, and foreign matter that has entered the peripheral portion of the semiconductor element can be immobilized.

Therefore, the thickness (height) of the semiconductor integrated circuit device can be reduced, and a short circuit (short circuit) due to foreign matter can be prevented.

As a result, the size of the external appearance of the semiconductor integrated circuit device can be reduced, and the thickness and size of the device can be reduced.

Further, the semiconductor integrated circuit device according to the present invention
A second bonding surface of the first insulating member is formed by polishing after being embedded in a peripheral portion of the semiconductor device, and formed on the surface electrode of the semiconductor device and the second bonding surface exposed by the polishing. The thin film extraction electrode is electrically connected.

Further, in the method of manufacturing a semiconductor integrated circuit device according to the present invention, the step of forming the thin film lead-out electrode on the element mounting surface of the element mounting substrate includes the step of forming the thin film external terminals on the non-element mounting surface of the element mounting substrate. Forming the semiconductor element on the element mounting surface by electrically connecting any one of the front and back electrodes of the semiconductor element and the thin film extraction electrode, and forming the semiconductor element on a peripheral portion of the semiconductor element. The first
Embedding an insulating member, electrically connecting one of the front and back electrodes of the semiconductor element and the thin-film extraction electrode to form the thin-film extraction electrode on the second bonding surface of the first insulating member. Exposing the exposed surface of the second insulating member to bond the second insulating member to the second bonding surface of the first insulating member; forming the second insulating member on a non-element mounting surface of the element mounting substrate. The method includes a step of electrically connecting each of the thin film external terminals and at least two of the thin film extraction electrodes formed in directions opposite to each other.

In the method of manufacturing a semiconductor integrated circuit device according to the present invention, the first insulating member may be embedded in a peripheral portion of the semiconductor element, and then the second bonding surface may be polished to form a surface electrode of the semiconductor element. The exposed surface electrode of the semiconductor element and the exposed thin-film extraction electrode are electrically connected to form the thin-film extraction electrode on the second bonding surface.

[0018]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a sectional view showing an embodiment of a structure of a semiconductor integrated circuit device according to the present invention, and FIG. 2 is an example of an embodiment of a plate member structure in a method of manufacturing a semiconductor integrated circuit device of the present invention. FIGS. 3A and 3B are perspective views, FIG. 3B is a partially enlarged cross-sectional view of a notch in the plate member, and FIG. 3 is an embodiment of the structure of the plate member in the method of manufacturing a semiconductor integrated circuit device according to the present invention. FIG. 4 is a schematic view showing an example of an embodiment of screen printing in a method of manufacturing a semiconductor integrated circuit device according to the present invention. FIG. 5 is a schematic view showing a method of manufacturing a semiconductor integrated circuit device according to the present invention. FIG. 6 is a perspective view showing an example of the embodiment of the structure of the first insulating member, FIG. 6 is a perspective view showing an example of the embodiment of the structure of the first insulating member in the method of manufacturing a semiconductor integrated circuit device of the present invention, and FIG. Semiconductor integration circuit of the present invention FIG. 8 is a perspective view showing an example of the embodiment of the structure of the second insulating member in the method of manufacturing the device. FIG. 8 is a perspective view showing an example of the embodiment of the stick-shaped substrate member in the method of manufacturing the semiconductor integrated circuit device of the present invention. FIG. 9 is a perspective view showing an example of the embodiment of the structure of the semiconductor integrated circuit device according to the present invention.

The semiconductor integrated circuit device according to the present embodiment mounts the semiconductor element 1 having the front surface electrode 1b on the front surface and the back surface electrode 1a on the rear surface, and has no lead frame. Here, a dipole rectangular and small diode (also called a chip diode or a silicon diode) on which the semiconductor element 1 is mounted will be described as an example.

The structure of the diode is a ceramic substrate 2 which is an element mounting substrate having an element mounting surface 2a on which the semiconductor element 1 is mounted and a non-element mounting surface 2b opposite thereto.
And a first joint to the element mounting surface 2a of the ceramic substrate 2.
A first insulating member provided with a bonding surface and a second bonding surface opposite thereto and embedded in the peripheral portion of the semiconductor element, and an exposed surface opposite to the non-element mounting surface of the ceramic substrate; 5b, the element mounting surface 2a of the ceramic substrate 2, and the second insulating member 5 of the first insulating member 11.
The back surface electrode 1a or the front surface electrode 1 of the semiconductor element 1 are formed in directions opposite to each other with respect to the bonding surface 11b.
b and a first thin-film extraction electrode 4a (thin-film extraction electrode) and a second thin-film extraction electrode 4 which are electrically connected to each other separately.
b (thin film extraction electrode) and thin film external terminals 6 electrically connected to the first thin film extraction electrode 4a or the second thin film extraction electrode 4b and formed on both the non-element mounting surface 2b and the exposed surface 5b. Have.

Further, in the diode of the present embodiment shown in FIG. 1, the second bonding surface 11b of the first insulating member 11
Are formed by polishing after being embedded in the peripheral portion 3 of the semiconductor element 1, and the surface electrode 1b of the semiconductor element 1 exposed by the polishing and the second thin film extraction electrode 4b formed on the second bonding surface 11b Are electrically connected.

That is, in the diode of this embodiment, one semiconductor element 1 is mounted, and two thin film external terminals 6 as outer lead portions are connected to the end 2d of the non-element mounting surface 2b of the ceramic substrate 2 and It is formed on the side surface 2c, the end 5d of the exposed surface 5b of the second insulating member 5, and the side surface 5c.

However, the two thin film external terminals 6 of the diode are connected to the non-element mounting surface 2b of the ceramic substrate 2.
It is sufficient that the diode is formed on at least one of the surface and the exposed surface 5b of the second insulating member 5 in consideration of the mountability of the diode on a printed wiring board (mounting board) and the like. In this case, the non-element mounting surface 2b and the exposed surface 5b
It is more preferable that they are formed on both sides.

Note that the thin film external terminals 6 are
Is formed on only one of the non-element mounting surface 2b and the exposed surface 5b of the second insulating member 5, the thin film external terminal 6 is connected to the side surface 2c of the ceramic substrate 2 and the second insulating member. 5 is formed on at least one of the side surfaces 5c, and at least the first thin-film extraction electrode 4a or the second thin-film extraction electrode 4b, which is an inner lead portion, and the thin film external terminal 6, which is an outer lead portion, are electrically connected. It is only necessary that the connection be made.

Here, the diode element mounting substrate according to the present embodiment is formed of an insulating material having high heat resistance and a high friction coefficient on its surface, and ceramic is used as a material satisfying this. Is preferred.

That is, the element mounting substrate is a ceramic substrate 2 formed of ceramic.

As a result, the element mounting surface 2a and the non-element mounting surface 2b of the ceramic substrate 2 have a high coefficient of friction, so that when the thin film external terminal 6 or the first thin film lead-out electrode 4a is formed, The degree of adhesion between the thin film external terminal 6 and the first thin film extraction electrode 4a to the substrate 2 can be increased.

However, the element mounting substrate may be formed of a material other than ceramic as long as the above conditions are satisfied.

The first insulating member 11 and the second insulating member 5
Is formed of, for example, a glass-based insulating material,
In the present embodiment, both are formed by screen printing.

The first insulating member 11 and the second insulating member 5
Is not limited to screen printing, and may be formed by another forming method such as potting as long as it can be formed thin and flat.

Further, the first thin-film extraction electrode 4a, the second thin-film extraction electrode 4b, and the thin-film external terminal 6 in the diode according to the present embodiment are formed of, for example, silver-palladium.
The second thin film extraction electrode 4b and the thin film external terminal 6 formed on the non-element mounting surface 2b of the ceramic substrate 2 are formed by screen printing.

At this time, the silver-palladium is used as the paste 10c (see FIG. 4).

However, the first thin-film extraction electrode 4a, the second thin-film extraction electrode 4b, and the thin-film external terminal 6 are not limited to screen printing, and may be formed by deposition or the like.
Alternatively, only one of them may be formed by screen printing, and the other may be formed by vapor deposition.

The thin-film external terminals 6 formed on the exposed surface 5b of the second insulating member 5 and the thin-film external terminals 6 formed on the side surfaces 5c and 2c of the second insulating member 5 and the ceramic substrate 2 are preferably In this case, for example, silver-palladium is used.

The thin-film external terminals 6 may also be formed by screen printing or vapor deposition other than the immersion method.

Here, the diode of the present embodiment has a three-layer structure composed of the ceramic substrate 2, the first insulating member 11, and the second insulating member 5, and is provided on the element mounting surface 2a of the ceramic substrate 2. A first thin film extraction electrode 4a is formed, and a semiconductor element 1 in which the first thin film extraction electrode 4a and the back electrode 1a are electrically connected is mounted on the element mounting surface 2a.

Further, a first insulating member 11 is formed over the semiconductor element 1 and the first thin-film lead-out electrode 4a, and a second bonding surface 11b formed by polishing is formed on the first insulating member 11.
Surface electrode 1b of semiconductor element 1 exposed by the polishing
And a second thin-film lead-out electrode 4b is formed electrically.

The first insulating member 11 is formed on the first insulating member 11 so as to cover the second thin-film extraction electrode 4b.

The first thin-film extraction electrode 4a and the second thin-film extraction electrode 4b are formed in directions opposite to each other, and are electrically connected to separate thin-film external terminals 6, respectively.

That is, the first thin film extraction electrode 4a formed on the ceramic substrate 2 is
Electrically connected to the second bonding surface 11 of the first insulating member 11.
b formed on the semiconductor element 1
Is electrically connected to the surface electrode 1b.

Here, the surface electrode 1b of the semiconductor element 1
It is a bump-shaped electrode, and the back surface electrode 1a is a thin and flat electrode.

As a result, the electric signal from the semiconductor element 1 is transmitted to the thin film external terminal 6 via the first thin film extraction electrode 4a or the second thin film extraction electrode 4b.
It is transmitted to the outside through the thin film external terminal 6.

Next, a method of manufacturing the semiconductor integrated circuit device (diode) according to the present embodiment will be described.

First, as shown in FIG. 2A, a plate member 8 having a substrate area 8a corresponding to a predetermined number of ceramic substrates 2 is prepared.

In the plate member 8, at least the substrate region 8a is formed of a ceramic material, and furthermore, the outer peripheral portion 2e is formed on the outer periphery 2e thereof so that a predetermined number and a predetermined size of the ceramic substrates 2 can be cut. A plurality of V-shaped grooves 9 (see FIG. 2B) are formed along the notches.

Here, the notch is not limited to the V-shaped groove 9 but may be of any other shape as long as it facilitates cutting of the plate member 8. In particular, it may not be formed.

Subsequently, on the element mounting surfaces 2a of the many ceramic substrates 2 of the plate member 8, each of the element mounting surfaces 2a
The first thin-film extraction electrode 4a is formed on the substrate a from the outer peripheral end 2f on the same side toward the inside 2g of the substrate.

At this time, a large number of first thin film extraction electrodes 4a are formed by screen printing using a paste 10c of silver-palladium or the like (see FIG. 4), which is then passed through a furnace to dry and fire. Is performed.

In the screen printing, as shown in FIG. 4, paste 10c such as silver-palladium is transferred and applied via a screen 10b by a squeegee 10a which is a spatula.

Here, the screen 10b is formed of, for example, mesh-like stainless steel, and is held by the screen frame 10d.

Further, an emulsion 7 is applied to the screen 10b, and the portion where the emulsion 7 is applied is a paste 1
0c does not pass, and the paste 10c passes only where the emulsion 7 is not applied.

Thus, the first thin film extraction electrode 4a can be formed on the ceramic substrate 2.

Subsequently, as shown in FIG. 3, on a non-element mounting surface 2b of a large number of ceramic substrates 2 provided in the substrate region 8a of the plate member 8, a predetermined portion thereof, here, the first surface of each ceramic substrate 2 1. Thin-film external terminals 6 are formed by screen printing on both ends 2d (see FIG. 1) on both sides in a direction substantially perpendicular to the direction in which the thin-film extraction electrode 4a is formed.

As a result, the ends 2d on both sides of the non-element mounting surface 2b of each ceramic substrate 2 are arranged in one predetermined direction (a direction substantially perpendicular to the direction in which the first thin film extraction electrode 4a is formed). This means that two thin film external terminals 6 have been formed.

Further, after the thin-film external terminals 6 are formed, the thin-film external terminals 6 are subjected to a heat treatment such as drying and firing by passing the thin-film external terminals 6 through a furnace body as described above.

Subsequently, the first thin film lead-out electrode 4a formed on the ceramic substrate 2 is electrically connected to the back electrode 1a of the semiconductor element 1 so that a predetermined number of semiconductor elements 1 are mounted on the element mounting surface 2a of the ceramic substrate 2. Mounted on each.

In the present embodiment, when the semiconductor element 1 is mounted, first, a metal paste such as solder is printed (applied) on the first thin-film lead-out electrode 4a formed on the ceramic substrate 2, and the element is mounted. Using a mounting jig etc.
As shown in FIG. 5, a predetermined number of semiconductor elements 1 are mounted on the element mounting surface 2a of the ceramic substrate 2.

Thereafter, the metal paste is melted by passing through a furnace body, and the first thin-film extraction electrode 4a and the back surface electrode 1a of the semiconductor element 1 are electrically connected.

Here, a heat treatment step (drying and firing) for forming the thin film external terminals 6 on the ceramic substrate 2 and a heat treatment step (drying and firing) for forming the first thin film extraction electrode 4a on the ceramic substrate 2 And a heat treatment step (drying and firing) when the metal paste is melted to electrically connect the semiconductor element 1 and the first thin-film extraction electrode 4a.

That is, when forming the thin film external terminal 6 and the first thin film extraction electrode 4 a on the ceramic substrate 2, only drying is performed by passing through a furnace, and thereafter, the metal paste is printed and the semiconductor element 1 is mounted thereon. By melting and drying the metal paste by performing drying and firing through a furnace body,
The heat treatment of the thin film external terminal 6 and the first thin film extraction electrode 4a and the melting of the metal paste can be performed simultaneously,
Thereby, the time spent in the heat treatment step can be reduced.

Thereafter, as shown in FIG. 5, a first insulating member 11 which is a glass-based insulating material is embedded in the peripheral portion 3 of the semiconductor element 1 by screen printing or the like.

That is, the peripheral portion 3 of the semiconductor element 1 is completely covered with the first insulating member 11 and the first thin film extraction electrode 4
a, and the semiconductor element 1 is sealed by the first insulating member 11.

Subsequently, the first insulating member 11 is heat-treated by being passed through a furnace body, so that the first insulating member 11 is hardened.

As a result, the element mounting surface 2a of the ceramic substrate 2 and the first bonding surface 11a of the first insulating member 11 can be joined to form the first insulating member 11 on the ceramic substrate 2. As a result, In addition, the semiconductor element 1 and the first thin-film extraction electrode 4a can be protected by the first insulating member 11.

Then, the second bonding surface 1 of the first insulating member 11
1b is polished to expose the surface electrode 1b of the semiconductor element 1.

That is, the second bonding surface 11b of the first insulating member 11 is polished by mechanical polishing or the like, and the surface electrode 1b of the semiconductor element 1 is exposed.

Subsequently, the surface electrode 1b of the semiconductor element 1 is electrically connected to the second thin-film extraction electrode 4b to form the second thin-film extraction electrode 4b on the second bonding surface 11b.

That is, as shown in FIGS. 1 and 6, the surface electrode 1 of the semiconductor element 1 is formed by screen printing or the like.
b to form a second thin-film extraction electrode 4b on the second joint surface 11b.

As with the first thin-film extraction electrode 4a, for example, silver-palladium is used for the second thin-film extraction electrode 4b, and the second thin-film extraction electrode 4b is substantially similar to the thin-film external terminal 6 formed on the non-element mounting surface 2b of the ceramic substrate 2. It is formed in a direction that forms a right angle and in a direction opposite to the first thin film extraction electrode 4a. That is, the first thin-film extraction electrode 4a and the second thin-film extraction electrode 4b are formed toward the outer peripheral portion 11c in the direction opposite to the first thin-film extraction electrode 4a, so that the side surface 2c or the side surface in the opposite direction to each other. 5c.

Thereafter, heat treatment (drying / firing) of the second thin-film extraction electrode 4b is performed through a furnace body.

Further, the first insulating member 11 is bonded to the second
A second insulating member 5, which is a glass-based insulating material, is formed so as to cover the thin film extraction electrode 4b.

Then, the second insulating member 5 is subjected to a heat treatment (drying and firing) by passing through a furnace body.
To cure.

As a result, as shown in FIGS. 1 and 7, the second bonding surface 11b of the first insulating member 11 and the opposing surface 5a of the second insulating member 5 are bonded together and the exposed surface 5b
Can be exposed to form the second insulating member 5 on the first insulating member 11, and as a result, the second insulating member 5 can protect the second thin-film extraction electrode 4b.

Thereafter, the plate member 8 is moved to the outer peripheral end 2f where the first thin film extraction electrodes 4a are formed (see FIG. 2A).
To expose the side surface 2c of the ceramic substrate 2, the side surface 11d of the first insulating member 11, and the side surface 5c of the second insulating member 5, respectively.

That is, in each ceramic substrate 2 of the plate member 8 shown in FIG.
Only the outer peripheral portion 2e (peripheral portion 5e in the second insulating member 5 shown in FIG. 7) in a direction perpendicular to the direction including the first insulating member 11 and the second insulating member 5 is cut for each ceramic substrate 2. This is called first cracking.

The side surface 2c of the ceramic substrate 2 and the side surface 11d of the first insulating member 11 are formed by the first cracking.
And the side surface 5c of the second insulating member 5 is exposed.

At this time, each ceramic substrate 2 is divided by a dividing device or the like along the outer peripheral portion 2e. However,
Since the outer peripheral portion 2e is formed with a large number of notches, ie, V-shaped grooves 9, the operator can easily cut without using a dividing device or the like.

At this point, in the present embodiment, the cross sections of the plurality of first thin-film extraction electrodes 4a and second thin-film extraction electrodes 4b are exposed on the two cut surfaces facing each other.
Further, a stick-shaped substrate member 13 (see FIG. 8) in which the plurality of ceramic substrates 2 are connected is formed.

Thereafter, the side surfaces 2 on both sides of the ceramic substrate 2
c, the side surfaces 11d on both sides of the first insulating member 11, and the side surfaces 5c on both sides of the second insulating member 5 and the end portions 5d on both sides of the exposed surface 5b, and the thin film external terminals 6 are formed by adhesion.

For the thin-film external terminals 6 formed by the immersion method, for example, a metal paste such as silver-palladium is used.

Subsequently, the thin film external terminals 6 are subjected to a heat treatment (drying / firing) through a furnace body.

Thus, the stick-shaped substrate member 13
, The thin film external terminal 6 on one of the non-element mounting surface 2b and the exposed surface 5b and the first thin film extraction electrode 4a,
The other thin-film external terminal 6 on the non-element mounting surface 2b and the exposed surface 5b can be electrically connected to the second thin-film extraction electrode 4b.

Thereafter, in the stick-shaped substrate member 13 to which the plurality of ceramic substrates 2 (four in the present embodiment) are connected, the first thin film extraction electrode 4a or the second
The outer peripheral portion 2e in a direction parallel to the thin film extraction electrode 4b is cut. This is called second cracking.

Thus, the cutting for each ceramic substrate 2 is completed, and the shape of the diode alone, that is, FIG.
(A semiconductor integrated circuit device) shown in FIG.

Thereafter, the cut diode is subjected to a plating process such as electroplating (also referred to as barrel plating).

In this method, the surface of each thin-film external terminal 6 made of silver-palladium is plated in the order of Ni plating and solder plating.

Thus, when the diode is mounted on a mounting board such as a printed wiring board, the degree of bonding between the diode and the mounting board can be improved.

Further, by performing Ni plating, it is possible to prevent solder erosion.

Thereafter, the characteristics of the diode are inspected, and non-defective products and defective products are selected.

Further, the non-defective diode is taped, packed and shipped.

The diode according to the present embodiment is
At the time when the first cracking is completed, each of the plurality of stick-shaped substrate members 13 has the side surface 2c and the side surface 5c.
And two non-element mounting surfaces 2b and exposed surfaces 5b each having a quadrilateral shape, and two opposing cut surfaces. The cross sections of the first thin-film extraction electrode 4a and the second thin-film extraction electrode 4b are exposed.

Further, as for the diode, the case where the thin film external terminals 6 are formed on both the non-element mounting surface 2b of the ceramic substrate 2 and the exposed surface 5b of the second insulating member 5 has been described.

This is because the thin film external terminals 6 are connected to the non-element mounting surface 2.
By forming the diode on both sides of the exposed surface 5b and the exposed surface 5b, the workability in mounting the diode on a mounting board such as a printed wiring board is improved.

That is, the thin film external terminal 6 is
b and the exposed surface 5b, when mounting the diode, either of the front and back surfaces of the diode (the non-element mounting surface 2b and the exposed surface 5b) is directed toward the mounting board. May be implemented.

However, the thin film external terminals 6 need not necessarily be formed on both the non-element mounting surface 2b and the exposed surface 5b, but may be formed on any surface.

According to the diode (semiconductor integrated circuit device) and the method of manufacturing the same of the present embodiment, the following operational effects can be obtained.

The surface electrode 1b of the semiconductor element 1 is connected to the second thin-film extraction electrode 4b as a thin-film extraction electrode without using a metal wire for wire bonding (connection without performing wire bonding), and Since the first insulating member 11 is embedded in the peripheral portion 3 of the semiconductor device 1, the metal wire is not used, and the peripheral portion 3 of the semiconductor element 1 is completely covered by the first insulating member 11. The height of the arch formed can be eliminated, and foreign matter that has entered the peripheral portion 3 of the semiconductor element 1 can be immobilized.

As a result, the thickness (height) of the diode (semiconductor integrated circuit device) can be reduced, and a short circuit (short circuit) due to foreign matter can be prevented.

As a result, the appearance of the diode can be reduced in size, the thickness and size of the diode can be reduced, and damage to the semiconductor element 1 can be reduced.

Further, since the first insulating member 11 is embedded in the peripheral portion 3 of the semiconductor element 1, it is possible to prevent foreign matter from newly entering the peripheral portion 3 of the semiconductor element 1.

Further, the first thin film extraction electrode 4a, the second thin film extraction electrode 4b, and the thin film external terminal 6 are formed by screen printing on a plate member 8 having a substrate region 8a corresponding to a predetermined number of ceramic substrates 2, and By cutting the plate member 8 to form individual ceramic substrates 2, the diodes can be manufactured by batch processing.

As a result, a large number of diodes can be manufactured at the same time, and as a result, the manufacturability of the diodes can be improved.

Further, the first insulating member 11 is formed on the element mounting surface 2a provided with the first thin film extraction electrode 4a, and
First insulating member 11 provided with second thin-film extraction electrode 4b
By forming the second insulating member 5 on the second bonding surface 11b, the first thin-film extraction electrode 4a is connected to the first insulating member 11, and the second thin-film extraction electrode 4b is connected to the second insulating member 5.
As a result, the first thin-film extraction electrode 4a and the second thin-film extraction electrode 4b can be protected.

The invention made by the inventor has been specifically described based on the embodiments of the present invention. However, the present invention is not limited to the embodiments of the invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the semiconductor integrated circuit device (diode) according to the above-described embodiment, after the semiconductor element 1 is covered with the first insulating member 11 which is a glass-based insulating material, the second bonding surface 11b is polished. Although the surface electrode 1b of the semiconductor element 1 is exposed to electrically connect the surface electrode 1b to the second thin-film extraction electrode 4b, the diode is a diode according to another embodiment shown in FIG. As described above, the second bonding surface 11b may not be polished.

Here, the diode shown in FIG.
The element housing substrate 12 having the through hole 12a is joined to the element mounting surface 2a of the ceramic substrate 2 (element mounting substrate), and the first insulating member 1 made of a glass-based insulating material or the like.
In the through hole 12a, the back surface electrode 1a of the semiconductor element 1 housed in the through hole 12a is
And a second thin film extraction electrode 4b (thin film extraction electrode) formed on the second bonding surface 11b of the first insulating member 11 and the bonding surface 12b of the element housing substrate 12, and the back surface electrode of the semiconductor element 1. 1a are electrically connected.

That is, the diode shown in FIG. 10 has a three-layer structure including the lower ceramic substrate 2, the intermediate element housing substrate 12, and the upper second insulating member 5.
The semiconductor element 1 is accommodated in the through hole 12a of the element accommodation substrate 12 with its surface electrode 1b facing downward.

Therefore, the first thin-film extraction electrode 4a formed on the element mounting surface 2a of the ceramic substrate 2 is electrically connected to the surface electrode 1b of the semiconductor element 1.

Further, the through holes 12a of the element accommodation substrate 12
Inside, the first insulating member 11 is embedded in the peripheral portion 3 of the semiconductor element 1 in a state where the back electrode 1a is exposed.

The non-element mounting surface 2 of the ceramic substrate 2
b, the exposed surface 5 b of the second insulating member 5, the side surfaces 2 c on both sides of the ceramic substrate 2, the side surfaces 12 c on both sides of the element housing substrate 12, and the two side surfaces 5 c on the both sides of the second insulating member 5. External terminals 6 are formed.

The element accommodating substrate 12 is formed of ceramic or the like, like the ceramic substrate 2, and has a through hole 12a for accommodating the semiconductor element 1 substantially near the center thereof.

Here, since the back electrode 1a of the semiconductor element 1 is relatively flat and has a large area, in the diode shown in FIG. 10, the second bonding surface 11b of the first insulating member 11 is polished. It is not necessary.

However, in the diode shown in FIG. 10, when the semiconductor element 1 is housed with the surface electrode 1b facing upward, the second bonding surface 11b must be polished to expose the surface electrode 1b.

Further, when the diode shown in FIG. 10 is manufactured, the element accommodating substrate 12 having the first thin film lead-out electrode 4a formed on the element mounting surface 2a of the ceramic substrate 2 and having the through hole 12a is previously mounted on the element mounting surface 2a. A substrate bonding member bonded to the substrate may be prepared, and a diode shown in FIG. 10 may be manufactured from this state, or a single ceramic substrate 2 like the diode of the embodiment shown in FIG.
(Including the case of the plate member 8 shown in FIG. 2A) is prepared,
From this state, the diode shown in FIG. 10 may be manufactured.

The same effects as those of the diode shown in FIG. 1 can be obtained in the diode shown in FIG.

In the above embodiment, the case where the ceramic substrate 2 is formed by cutting the plate member 8 has been described. However, the ceramic substrate 2 corresponds to one diode (semiconductor integrated circuit device) in advance. It may be formed in a predetermined size.

In this case, a ceramic substrate 2 having a predetermined size corresponding to one diode is prepared in advance, and then the same manufacturing method as that of the diode described in the above embodiment is used. A diode similar to the diode described in the embodiment can be manufactured.

Here, it goes without saying that the first cracking and the second cracking can be omitted in the manufacturing method.

In the above embodiment, the case where the element mounting substrate is the ceramic substrate 2 has been described.
The element mounting board may be a printed board formed of an epoxy resin or the like as long as it has heat resistance.

Further, in the above embodiment and the other embodiments, the semiconductor integrated circuit device has two poles (2
Although the description has been given of the case of a diode (having one thin film external terminal), the semiconductor integrated circuit device may be a capacitor or the like, and further includes a three-pole transistor or a plurality of four or more thin film external terminals. Alternatively, another semiconductor integrated circuit device may be used.

[0122]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). In order to connect the front and back electrodes of the semiconductor element and the thin-film lead-out electrode without using a metal wire, and to embed the first insulating member in the periphery of the semiconductor element, the use of the metal wire is not required. By being completely covered by one insulating member, the thickness of the semiconductor integrated circuit device can be reduced, and a short circuit due to foreign matter can be prevented. As a result, the semiconductor integrated circuit device can be made thinner and smaller, and damage to the semiconductor element can be reduced.

(2). Since the first insulating member is buried in the peripheral portion of the semiconductor element, it is possible to prevent foreign matter from newly entering the peripheral portion of the semiconductor element.

(3). By forming a thin film extraction electrode and a thin film external terminal by screen printing on a plate member having a substrate area corresponding to a predetermined number of element mounting substrates, and cutting the plate member to form individual element mounting substrates, A semiconductor integrated circuit device can be manufactured by batch processing. As a result, a large number of semiconductor integrated circuit devices can be manufactured at the same time, and as a result, the manufacturability of the semiconductor integrated circuit device can be improved.

(4). The first insulating member is formed on the element mounting surface on which the thin film extraction electrode is provided, and the second insulation member is formed on the second bonding surface of the first insulation member on which the thin film extraction electrode is provided. The thin-film extraction electrode can be covered by the first or second insulating member, and as a result,
The thin-film extraction electrode can be protected.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an example of an embodiment of the structure of a semiconductor integrated circuit device according to the present invention.

2A and 2B are diagrams showing an example of an embodiment of a structure of a plate member in a method of manufacturing a semiconductor integrated circuit device according to the present invention, wherein FIG. 2A is a perspective view thereof, and FIG. FIG. 5 is a partially enlarged sectional view of a notch in a plate member.

FIG. 3 is a perspective view showing an example of an embodiment of a structure of a plate member in a method of manufacturing a semiconductor integrated circuit device according to the present invention.

FIG. 4 is a schematic diagram showing an example of an embodiment of screen printing in a method of manufacturing a semiconductor integrated circuit device according to the present invention.

FIG. 5 is a perspective view showing one example of an embodiment of a structure of a first insulating member in a method for manufacturing a semiconductor integrated circuit device of the present invention.

FIG. 6 is a perspective view showing an example of an embodiment of a structure of a first insulating member in a method for manufacturing a semiconductor integrated circuit device of the present invention.

FIG. 7 is a perspective view showing an example of an embodiment of a structure of a second insulating member in a method for manufacturing a semiconductor integrated circuit device of the present invention.

FIG. 8 is a perspective view showing an example of an embodiment of the structure of a stick-shaped substrate member in the method for manufacturing a semiconductor integrated circuit device of the present invention.

FIG. 9 is a perspective view showing an example of an embodiment of the structure of a semiconductor integrated circuit device according to the present invention.

FIG. 10 is a sectional view showing an example of the structure of a semiconductor integrated circuit device according to another embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 semiconductor element 1a back electrode 1b front electrode 2 ceramic substrate (element mounting substrate) 2a element mounting surface 2b non-element mounting surface 2c side surface 2d end 2e outer peripheral portion 2f outer peripheral end 2g substrate inner 3 peripheral portion 4a first thin film drawing Electrode (thin film extraction electrode) 4b Second thin film extraction electrode (thin film extraction electrode) 5 Second insulating member 5a Opposed surface 5b Exposed surface 5c Side surface 5d End 5e Outer periphery 6 Thin film external terminal 7 Emulsion 8 Plate member 8a Substrate area 9 V Groove 10a Squeegee 10b Screen 10c Paste 10d Screen frame 11 First insulating member 11a First joining surface 11b Second joining surface 11c Outer peripheral portion 11d Side surface 12 Element housing substrate 12a Through hole 12b Joint surface 12c Side surface 13 Stick-shaped substrate member

Continuing from the front page (72) Inventor Kohei Yamada 5-2-1, Josuihonmachi, Kodaira-shi, Tokyo In the semiconductor division of Hitachi, Ltd.

Claims (9)

[Claims] 1. A semiconductor integrated circuit device having a semiconductor element mounted thereon, comprising: an element mounting board having an element mounting surface on which the semiconductor element is mounted and a non-element mounting surface opposite to the element mounting surface; A first insulating member having a first bonding surface to be bonded to an element mounting surface of the substrate and a second bonding surface opposite to the first bonding surface, and embedded in a peripheral portion of the semiconductor element; A second insulating member having an exposed surface opposite to a surface; and a semiconductor element formed in opposite directions on an element mounting surface of the element mounting board and a second bonding surface of the first insulating member. At least two thin film extraction electrodes electrically connected to the front and back electrodes separately, and electrically connected to the thin film extraction electrode, and at least one of the non-element mounting surface and the exposed surface The semiconductor integrated circuit device characterized by having a thin-film external terminals formed on. 2. The semiconductor integrated circuit device according to claim 1, wherein the second bonding surface of the first insulating member is formed by polishing after being embedded in a peripheral portion of the semiconductor element, and is formed by the polishing. A semiconductor integrated circuit device, wherein the exposed surface electrode of the semiconductor element is electrically connected to a thin-film extraction electrode formed on the second bonding surface. 3. The semiconductor integrated circuit device according to claim 1, wherein an element housing substrate having a through hole is joined to an element mounting surface of said element mounting substrate, and said first insulating member is formed in said through hole. A thin film lead formed on the second bonding surface of the first insulating member and the bonding surface of the element housing substrate, by exposing a back electrode of the semiconductor element housed therein to be embedded in a peripheral portion of the semiconductor element. A semiconductor integrated circuit device, wherein an electrode and a back electrode of the semiconductor element are electrically connected. 4. The semiconductor integrated circuit device according to claim 1, wherein the two thin film external terminals are one of a non-element mounting surface of the element mounting substrate and an exposed surface of the second insulating member. A semiconductor integrated circuit device comprising a diode formed on at least one of the surfaces. 5. The method for manufacturing a semiconductor integrated circuit device according to claim 1, wherein the step of forming the thin-film lead-out electrode on an element mounting surface of the element mounting substrate is performed. Forming the thin-film external terminals on the non-element mounting surface, and electrically connecting one of the front and back electrodes of the semiconductor element and the thin-film extraction electrode to mount the semiconductor element on the element mounting surface Embedding the first insulating member in a peripheral portion of the semiconductor element, electrically connecting the other of the front and back electrodes of the semiconductor element and the thin film extraction electrode to form the thin film extraction electrode. Forming the first insulating member on the second joint surface; exposing an exposed surface of the second insulating member to join the second insulating member to the second joint surface of the first insulating member; The element A step of electrically connecting the thin film external terminals formed on the non-element mounting surface of the mounting substrate to at least two thin film extraction electrodes formed in directions opposite to each other. Manufacturing method. 6. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein said first insulating member is embedded in a peripheral portion of said semiconductor element, and said second insulating member is embedded in said semiconductor device.
The bonding surface is polished to expose the surface electrode of the semiconductor element, and the exposed surface electrode of the semiconductor element and the thin film extraction electrode are electrically connected to form the thin film extraction electrode on the second bonding surface. A method for manufacturing a semiconductor integrated circuit device. 7. The method for manufacturing a semiconductor integrated circuit device according to claim 1, wherein a plate member having a substrate area corresponding to a predetermined number of said element mounting substrates is prepared. A step of forming the thin-film lead-out electrodes on the element mounting surface of the element mounting board of the plate member from the outer peripheral edge on the same side toward the inside of the substrate on each of the element mounting surfaces; Forming a thin film external terminal at a predetermined position on an element mounting surface; and electrically connecting a thin film lead electrode of the element mounting substrate and a back electrode of the semiconductor element to mount the semiconductor element on the element mounting substrate. Embedding the first insulating member in a peripheral portion of the semiconductor element; polishing a second bonding surface of the first insulating member to expose a surface electrode of the semiconductor element; A step of electrically connecting a thin-film extraction electrode to form the thin-film extraction electrode on the second bonding surface; a step of forming the second insulating member by bonding the first insulating member to the first insulating member; A step of exposing the side surface of the element mounting substrate by cutting along an outer peripheral end portion on which the thin film extraction electrode is formed, at least forming a thin film external terminal on the side surface of the element mounting substrate, and A method for manufacturing a semiconductor integrated circuit device, comprising a step of electrically connecting thin film external terminals. 8. The method of claim 1, 2, 3, 4, 5, 6, or 7.
5. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein at least two of said thin film lead electrodes and said thin film external terminals formed on a non-element mounting surface of said element mounting substrate are formed by screen printing. A method for manufacturing an integrated circuit device. 9. The method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein two thin-film external terminals as diodes are provided on a non-element of the element mounting substrate. A method of manufacturing a semiconductor integrated circuit device, wherein the method is formed on at least one of a mounting surface and an exposed surface of the second insulating member.