JPH1074763A - Copper wiring and manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of obtaining a copper wiring of high reliability at a low cost. SOLUTION: When copper material is filled into recessed parts 131 and 132 cut in a substrate 10 for the formation of a copper wiring, a copper CVD thin film 16 is formed on an insulating film 12 through a CVD method and turned fluid by a heat-treatment, and then a copper sputtered thin film 20 is formed. The copper thin film 16 formed in the recessed parts 131 and 132 is turned fluid by a thermal treatment, thereby the copper sputtered thin film 20 can be deposited on the recessed parts 181 and 182 each possessed of a wide opening and a narrow base, so that no overhang is formed, and thus no void is formed inside copper wirings 251 and 252 . As the copper sputtered thin film 20 is not expensive, the copper wirings 251 and 252 can be lessened in cost.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a copper wiring by filling a fine concave portion on a surface of an insulating film with a copper material, and more particularly to a technique for forming a copper wiring by using a sputtering method.

[0002]

2. Description of the Related Art At present, an electrode wiring material mainly containing aluminum (Al) is used in a semiconductor integrated circuit because of its easiness in processing.

However, the electrode wiring made of aluminum has a low resistance to electromigration and stress migration, and as the size of the semiconductor integrated circuit advances, the number of defects increases, which is a problem.

Therefore, it has been conventionally proposed to use tungsten (W) or molybdenum (Mo) having high resistance to electromigration and stress migration instead of the electrode wiring material containing aluminum as a main component. However, since these materials have a large resistance value as compared with aluminum, a signal delay due to a large voltage drop has arisen as a new problem when applied to fine wiring patterns.

In order to solve the problem, the use of copper (Cu) having a small resistance value and excellent electromigration resistance and stress migration resistance as an electrode wiring material has been studied. Can not be done, CMP is currently
Promising is a copper wiring manufacturing method using (chemical mechanical polishing method).

A conventional copper wiring manufacturing process using such a CMP method will be described. Reference numeral 111 in FIG. 12A denotes a wiring target, which includes a substrate 110 and an insulating film 112 formed on the substrate 110. The insulating film 112
The recesses 113 ₁ , 11 ₁ are formed by dry etching.
3 ₂ are formed on its surface, the diffusion preventing film (barrier metal) 114 are entirely deposited.

After a copper CVD thin film 116 is formed on the wiring object 111 by the CVD method (FIG. 1B),
When the surfaces are polished by the method, the insides of the concave portions 113 ₁ and 113 ₂ are filled with the copper material constituting the copper CVD thin film 116, and copper wirings 125 ₁ and 125 ₂ are formed.

When the CVD method is used in the method of manufacturing the copper wiring by the CMP method, the concave portions 113 ₁ and 113 ₂ are used because the copper thin film can be grown isotropically by the CVD method.
This is because the inside is (theoretically) completely filled with the copper material.

In the case of a copper sputtered thin film, as shown in FIG. 13, the copper sputtered thin film overhangs 140 ₁ , 140 at the opening ends of the recesses 133 ₁ , 133 ₂ formed in the insulator 132 on the substrate 130. ₂ and each recess 133 ₁ , 1
33 in ₂ closed its portion before being filled with copper material,
In particular, the cavity 14 _{1 is} located in the recess 133 ₁ having a high aspect ratio.
1 occurs.

[0010] Such overhangs 140 ₁ , 14
0 ₂ and cavity 141 is not only copper sputtered thin film, but also can occur in the case of forming the aluminum thin film by sputtering, in the case of aluminum sputtered film, heat treatment is performed at a low temperature of 400 ° C. to 450 ° C. It is known that it can be easily fluidized and the interior of the cavity can be filled with an aluminum material (reflow technology).

However, in the case of the copper sputtered thin film, unlike the aluminum sputtered thin film, it does not easily fluidize even if heat treatment is performed. For example, a copper sputtered thin film formed on a TiN film is treated under a hydrogen atmosphere of 1.0 Torr under 450
No fluidization was observed even after a heat treatment of 30 ° C. for 30 minutes, so that the recesses having a high aspect ratio exceeding 1.5 could not be filled with the copper material of the copper sputtered thin film.

As described above, in the prior art, the inside of the concave portion having a high aspect ratio cannot be filled with the copper sputtered thin film.
D thin film had to be formed and filled.

However, there is a problem that the raw material of the copper CVD thin film is unstable to heat and moisture and is easily decomposed. Further, depending on the film formation conditions, there are many impurities in the film, and the reliability may be low.

Further, the raw material gas for producing the copper CVD thin film is expensive, and the growth rate of the copper thin film by the CVD method is as slow as about 1/10 of that of the sputtering method. High costs were incurred.

[0015]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned disadvantages of the prior art, and has as its object to provide a technique capable of forming a copper wiring by using a sputtering method. .

[0016]

According to a first aspect of the present invention, there is provided a method of forming a thin copper film on an insulating film formed on a substrate and provided with a concave portion. In a copper wiring manufacturing method of forming a copper wiring by filling with a copper material, a copper CVD thin film is formed by growing copper by a CVD method, and heat treatment is performed to fluidize the copper CVD thin film, thereby forming copper on the concave portion. After forming a recess having a narrow bottom and a wide opening in the CVD thin film, a copper sputtered thin film is formed by a sputtering method, and the inside of the recess is filled with the copper material of the copper CVD thin film and the copper material of the copper sputtered thin film. It is characterized by filling.

In this case, it is preferable that the growth of copper by the CVD method is stopped before the copper CVD thin films formed on the side surfaces in the concave portion come into contact with each other, as in the method according to the second aspect of the present invention.

Further, any one of claims 1 and 2
In the method for producing a copper wiring described in the above item, the formation of the copper CVD thin film and the heat treatment may be repeatedly performed as in the method of the present invention.

Further, any one of claims 1 to 3
In the method of manufacturing a copper wiring described in the above item, a step of forming a diffusion prevention film on the substrate may be provided as in the method of the present invention.

In the method of manufacturing a copper wiring according to any one of the first to fourth aspects, the copper sputtered thin film is thinner than the copper CVD thin film as in the method of the fifth invention. Can be made thicker.

Further, in the method of manufacturing a copper wiring according to any one of the first to fifth aspects, the copper material filled in the recess is left as in the method of the invention according to the sixth aspect, The other part of the copper material is removed by chemical mechanical polishing,
A copper wiring can be formed with the copper material filled in the concave portion.

On the other hand, the apparatus according to the present invention is a copper wiring in which a copper material is filled in a concave portion provided in an insulating film on a substrate, wherein the copper wiring is formed by a CVD method. It is characterized by including a copper material of a copper CVD thin film fluidized by a heat treatment and a copper material of a copper sputtered thin film formed by a sputtering method on the fluidized copper CVD thin film.

Generally, the growth state of the copper thin film includes isotropic growth and anisotropic growth. As described above, when the inside of the fine concave portion is filled with the copper material, the growth state is the same. Anisotropically grown CVD techniques have been used.

On the other hand, a sputtering method widely used for forming a metal thin film is anisotropic growth, and metal particles flying from a target are liable to adhere to the opening end of the concave portion. Is solved by reflow in the aluminum sputtered thin film.

However, the melting point of copper is as high as 1060 ° C. in a bulk state, for example, and a copper sputtered thin film, unlike an aluminum sputtered thin film, does not easily flow even when heated. Was thought.

However, the inventors of the present invention have proposed that
Copper isotropically grown (conformal) by the
When a VD thin film is formed, the copper CVD thin film
It has been found that fluidization can be easily achieved by heat treatment at a low temperature of 00 ° C. or lower.

By the way, the side surface of the fine concave portion formed on the insulating film is substantially perpendicular to the bottom surface. Therefore, when a metal thin film is formed by the sputtering method, the opening end is closed by overhang. Would. Therefore,
It is thought that if a copper sputtered thin film is formed on a dent having a narrow bottom and a wide opening, the opening of the dent will not be closed and a cavity will not be formed inside.

Therefore, when a copper thin film is formed on an insulating film having a concave portion on a substrate, and the concave portion is filled with a copper material to form a copper wiring, first, copper is grown by a CVD method to form a copper CVD film. A thin film was formed, and heat treatment was performed to fluidize the copper CVD thin film. In the recess after fluidization, a recess having a narrow bottom and a wide opening was formed. When a copper sputtered thin film was formed thereon, the inside of the depression could be filled with the copper sputtered thin film. In this case, copper CV is provided in the lower layer in the recess.
The D thin film is located on which the copper sputtered thin film is formed, and the inside of the concave portion is filled with the copper material.

However, during the growth of copper by the CVD method, if the reaction proceeds until the copper CVD thin films formed on the side surfaces in the recess come into contact with each other, the contact portion is closed and a cavity is formed in the recess. . Since this cavity cannot be removed by heat treatment, the growth of copper is stopped before the inside of the recess is closed, and the copper C
It is preferable to fluidize the VD thin film.

In this case, it is necessary to stop the growth of copper before the inside of the narrowest recess among the recesses formed in the insulating film is closed. Therefore, copper CV
The thickness of the D thin film is insufficient. As a result, even when the copper sputtered thin film is formed, the inside of the concave portion cannot be completely filled with the copper material or the copper sputtered thin film is formed too thick, so that a cavity is formed inside the copper sputtered thin film. May occur.

Therefore, when copper wiring is simultaneously formed in the narrow concave portion and the wide concave portion, the formation of the copper CVD thin film and the heat treatment are repeated, and the inside of the wide concave portion becomes the thickness of the copper thin film. The copper CVD thin film is preferably filled with a copper material to such an extent that shortage does not occur or a cavity due to the copper sputtered thin film does not occur.

At the time of forming such a copper wiring, the copper thin film on the surface of the insulating film can be removed by a CMP method (chemical mechanical polishing) or the like. All of the sputtered thin film is removed, and there is a case where a copper wiring is formed only by the copper material of the copper CVD thin film.

Since the copper material is easily diffused, when such a copper wiring is formed, a copper CVD thin film is formed after forming an anti-diffusion film on a substrate so that copper is not diffused. Good to put.

[0034]

Embodiments of the present invention will be described with reference to the drawings. 1 (a) to 1 (c) and 2 (d) to 2 (e) are process diagrams showing an example of a method for manufacturing a copper wiring according to the present invention.
Reference numeral 1 denotes a wiring object.

The wiring object 11 is a silicon substrate 10
And an insulating film 12 made of a silicon oxide film formed on the silicon substrate 10. The insulating film 12
Is formed to a thickness of 1.0 .mu.m, and on the surface thereof, the concave portion 13 ₁ of the narrow groove shape of width 0.5 [mu] m, and the recess 13 _{and second} narrow groove shape having a width are provided than , Recess 1
3 to ₁ high aspect ratio, is adapted recess 13 ₂ becomes low aspect ratio than that.

First, on the insulating film 12 of the wiring object 11,
By sputtering of a TIN target, a film thickness of 70
An anti-diffusion film 14 made of a 0 ° TiN thin film was formed.
The sputtering is performed when the distance between the substrate and the target is 20.
0 mm long-distance sputtering method, the recess 13 ₁ ,
To 13 ₂ sides were so diffusion preventing film 14 is formed.

Next, the wiring object 11 on which the diffusion preventing film 14 was formed was mounted in the loading / unloading chamber 61 of the copper thin film manufacturing apparatus indicated by reference numeral 52 in FIG.

The copper thin film manufacturing apparatus 52 includes a transfer chamber 60 and a transfer chamber 61 and a CVD chamber 6 around the transfer chamber 60.
2, an annealing chamber 63, and a sputtering chamber 64 are arranged, and the above-mentioned wiring object 11 is placed in the carry-in / out chamber 61, evacuated, and then placed in the transfer chamber 60. The wafer was conveyed into the CVD chamber 62 by the arm 72 of 71.

After the wiring object 11 is carried into the CVD chamber 62, copper, hexafluoroacetylacetone and vinyltrimethylsilane (Hexafluoroacetylacetonate Cu) are used.
A raw material gas containing (I) vinyltrimetylsilane) (abbreviated as [Cu (hfac) (vtms)]) is introduced, a substrate temperature is 170 ° C., a film forming pressure is 1.0 Torr, a hydrogen carrier flow rate is 600 sccm, and a raw material gas [Cu (hfac) (vtms)] Copper was grown under film forming conditions of a supply amount of 0.5 g / min. High aspect ratio recess 13 ₁ is copper C
The copper CVD thin film 16 is not filled with the VD thin film 16.
When the film thickness became 1000 °, the CVD reaction was stopped.

[0040] As so thickness of less than half of the recess 13 _1, 13 ₂ of the width, copper is formed on the side surface of each recess 13 _1, 13 ₂ C
The VD thin films 16 are not in contact with each other, and each recess 13 ₁ ,
13 ₂ has spaces 17 ₁ and 17 ₂ open at the top.
(FIG. 1 (c)).

In general, when the width of the concave portion is W and the film thickness is D, if the film thickness D satisfies the following expression, D <W / 2, the copper CVD thin films formed on the side surfaces of the concave portion do not contact each other. However, since the surface of the copper CVD thin film is not smooth, it is necessary to stop the growth of copper with a sufficient margin so that the projections of the copper CVD thin film do not come into contact with each other and form a cavity.

Next, the wiring object 11 having the copper CVD thin film 16 formed thereon is moved from the CVD chamber 62 to the annealing chamber 6.
3 was subjected to an annealing treatment (heat treatment) at 350 ° C. for 10 minutes in a hydrogen atmosphere.
Fluidized, the recesses 13 _1, 13 around the copper CVD film 16 flows into the _2, on the surface of the copper CVD film 16 after fluidization bottom narrow recess 18 _first opening is wide, 18 ₂ It was formed (FIG. 2 (d)).

[0043] The state of the recess 13 ₁ a high aspect ratio, SEM photographs of FIGS. 3 (a) a pre-fluidization of the copper CVD film 16, shown in the SEM photograph shown in FIG. 3 (b) the post-fluidized. Further, S of the state of the concave portion 13 ₂ of low aspect ratio, SEM photographs of FIGS. 5 (a) a pre-fluidization of the copper CVD film 16, a post-fluidized FIG 5 (b)
It is shown in the EM photograph. Due to the difference in the surface state before and after fluidization, the copper CVD thin film 16 is flattened, and the concave portions 13 ₁ , 13 ₂
The position, the bottom is narrow, wide recess 18 ₁ of the opening 18 ₂
Is formed. The depression 18 ₁ ,
18 ₂ cross-sectional shape is bowl-shaped, the most narrow width of the bottom surface is wider him to become the top.

The wiring object 11 in which the depressions 18 ₁ and 18 ₂ are formed is carried into the sputtering chamber 63, and the distance from the copper target is set to 300 mm, and sputtering is performed.
Copper is deposited on the fluidized copper CVD thin film 16 to a thickness of 6
When the copper sputtered thin film 20 of 000 ° was formed, the depressions 18 ₁ and 18 ₂ were filled with the copper material constituting the copper sputtered thin film 20 (FIG. 3E). At this time, the film forming speed is about 1500.
Å / min.

The high aspect ratio recess 13 ₁ (width 0.5 μm)
FIG. 4A shows the cross section of FIG.
FIG. 4B shows the SEM photograph of FIG.
Further, the recess 13 _{and second} section of low aspect ratio of the width of 0.6 .mu.m, a front before the formation of the sputtered copper thin film 20 of FIG. 6 (a) SE
The M photograph and the SEM photograph after formation are shown in FIG. 6 (b).

As can be seen from these SEM photographs, the depressions 18 ₁ , 18 ₂ are filled with the copper sputtered film 20, and the surfaces of the copper sputtered thin film 20 have the depressions 18 ₁ , 18 _2.
It has been shaped reflecting recesses 13 _1, 13 ₂ on the depression 2
11 ₁ and 21 ₂ are observed.

When the surface of the wiring object 11 on which the copper sputtered thin film 20 was formed was polished by the CMP method, the insides of the concave portions 13 ₁ and 13 ₂ were the copper CVD thin film 16 and the copper sputtered thin film 2.
Thus, copper wirings 25 ₁ and 25 ₂ filled with a copper material constituting 0 and insulated from each other were obtained (FIG. 2F).

In this example, as shown in FIG. 2 (f), the vicinity of the surface of the central portion of the copper wirings 25 ₁ and 25 ₂ is made of the copper material of the copper sputtered thin film 20 and the periphery thereof is the copper CVD thin film 16
However, by appropriately selecting the thickness of the copper CVD thin film 16, the concave portion 1 having a high aspect ratio can be formed.
Copper wiring 25 ₁ 3 _1, it is also possible to configure only copper material of the copper CVD film 16.

The recesses 13 ₁ and 13 ₂ are formed on the wiring object 11.
7 (a) before heat treatment of the copper CVD thin film 16 in the narrow groove-shaped concave portion having a width of 0.7 μm formed together with
FIG. 7 (b) shows an SEM photograph of the M photograph after heat treatment. After fluidization, it is observed that a mortar-shaped recess having a narrow bottom surface and a wide opening portion is formed. However, copper CV
D film 16 is stopped to grow at around braze become thickness before 1000Å to the recess 13 ₁ a high aspect ratio is closed.

When a copper sputtered thin film is formed after the heat treatment of the copper CVD thin film 16 of 1000 ° C.,
FIG. 9 shows the state of the narrow groove recess of 4 to 0.9 μm. The width of each narrow groove is shown in FIG. The film thickness of the narrow groove having a width of 0.7 μm or more is insufficient.

In order to solve such a shortage of the thickness of the copper CVD thin film in the concave portion having a low aspect ratio, the formation of the copper CVD thin film 16 and fluidization by heat treatment may be performed a plurality of times. That is, when copper wiring is formed for all of the concave portions having greatly different aspect ratios, after the fluidization of the copper CVD thin film is completed, the copper CVD thin film is formed and fluidized again,
What is necessary is just to form a copper sputter thin film on the surface.

In this case, in the CVD step of growing copper, a space closed by contact with the copper CVD thin film grown from the side surface of the concave portion or the depression is prevented from being formed, and one layer formed by fluidization is formed. A second-layer copper CVD thin film is formed on the depression of the second copper CVD thin film without forming a cavity, the second-layer copper CVD film is fluidized, and a copper sputter is formed on the formed depression. It is preferable to form a thin film.

As described above, if the formation of the copper CVD thin film and the heat treatment are repeated until the inside of the concave portion can be filled with the copper sputtered thin film, the copper Since a thin film can be formed, the concave portions having a high aspect ratio and the concave portions having a low aspect ratio can be filled with a copper material.

When the concave portion is filled with a copper material without fluidizing the copper CVD thin film as in the prior art,
As shown by reference numeral 127 in FIGS. 12B and 12C, the surface of the concave portion is closed, and a cavity is formed inside the copper wiring. Once the cavities are formed, it is difficult to remove them even if they are fluidized.

The above is the description of the recesses 13 ₁ , 1 formed in the insulating film.
3 ₂ has been described for the case of narrow grooves, but the shape of the recess is not limited to the narrow groove. The insulating film 12 is provided under the diffusion preventing film 14, and the diffusion preventing film 14 on the bottom surfaces of the concave portions 13 ₁ and 13 ₂ is not in contact with the surface of the substrate 10, so that the copper wirings 25 ₁ and 25 ₂ Was electrically insulated, but the diffusion prevention film 14 on the bottom surface of the recesses 13 ₁ and 13 ₂
What is formed directly on it is also included in the present invention. That is, the diffusion prevention film may be formed on the contact holes where the substrate surface is exposed and the via holes where the underlying metal wiring surface is exposed, if necessary, and the method of the present invention can be used.

In the above embodiment, TiN was used for the diffusion prevention film, but the diffusion prevention film that can be used in the present invention is not limited to this. A thin film that can prevent copper from diffusing into an insulating film or an oxide film. For example, TiW, Ta, M
High melting point metals such as o and W, and compounds of these high melting point metals can be used. The single layer film may constitute the diffusion prevention film, or the multilayer film may be formed to constitute the diffusion prevention film.

The insulating film according to the present invention is not limited to a silicon oxide film, but includes various insulating thin films such as a silicon nitride film. The copper CVD thin film and the copper sputtered thin film widely include a metal thin film and a metal material containing copper as a main component. For example, when a copper is grown by the CVD method, a gas containing another metal is added, and a copper CVD thin film having improved characteristics is included. Further, the present invention includes a copper sputtered thin film formed by sputtering a copper alloy or the like to which another element is added, and a copper sputtered thin film formed by a sputtering method in which an additional gas is introduced. The substrate is not limited to a silicon substrate.

Further, the CVD method for growing copper is not limited to the case where the substrate temperature is set to 170 ° C. However, with the raw material gas for the copper thin film used in the present embodiment, the film forming reaction becomes rate-determined at high temperatures, and the isotropic copper thin film cannot be grown. Therefore, the CVD method is performed at a substrate temperature of 180 ° C. or lower. It is desirable to do.

The temperature of the heat treatment of the copper CVD thin film is not limited to 350 ° C. described above. When performed at a high temperature, the copper CVD thin film can be fluidized in a short time, which is desirable from the viewpoint of cost. However, it is necessary to perform the process at a temperature at which copper does not diffuse into the insulating film or the substrate. In the case where TiN is used as the diffusion prevention film, the barrier property deteriorates when the temperature exceeds 600 ° C., and therefore it is necessary to set the temperature to that temperature or lower. In addition, a diffusion prevention film such as a TiN film may have a barrier property lower at a temperature of 600 ° C. or less depending on the film quality.
The following is practical.

The atmosphere for performing such an annealing process is not necessarily limited to a hydrogen gas atmosphere. For example, a copper CVD thin film can be fluidized only by heating in a vacuum.

[0061]

According to the present invention, a highly reliable copper wiring having no void can be obtained. Since a sputtering method can be used, a low-cost copper wiring can be obtained.

[Brief description of the drawings]

FIG. 1 (a) to (c): First half process chart for explaining an example of the method of the present invention.

FIG. 2 (d) to (f): Process drawings of the latter half

FIG. 3 (a): SEM photograph showing a state before fluidization of a copper CVD thin film on a concave portion having a high aspect ratio. (B): SEM photograph showing a state after fluidization of the copper CVD thin film.

4A is a cross-sectional SEM photograph showing a state of a dent formed in a copper CVD thin film in a concave portion having a high aspect ratio. FIG. 4B is a cross-section showing a state after a copper sputtered thin film is formed on the dent. SEM photograph

FIG. 5 (a): SEM photograph showing a state before fluidization of a copper CVD thin film on a concave portion having a low aspect ratio. (B): SEM photograph showing a state after fluidizing the copper CVD thin film.

6A is a cross-sectional SEM photograph showing a state of a recess formed in a copper CVD thin film in a concave portion having a low aspect ratio. FIG. 6B is a cross section showing a state after a copper sputtered thin film is formed on the recess. SEM photograph

FIG. 7 (a): SEM photograph showing a state before heat treatment of a copper CVD thin film formed in a narrow groove-shaped concave portion having a width of 0.7 μm (b): SEM showing a state after heat treatment of the copper CVD thin film
Photo

FIG. 8 is a cross-sectional SEM photograph of the state of FIG. 7 (b).

FIG. 9 is an SEM photograph showing a state of a copper sputtered thin film formed on a copper CVD thin film after fluidization in a narrow groove concave portion having a width of 0.4 to 0.9 μm.

FIG. 10 is a view for explaining a groove width in FIG. 9;

FIG. 11 shows an example of a copper thin film manufacturing apparatus that can be used in the manufacturing process of the present invention.

FIGS. 12A to 12C are diagrams for explaining a manufacturing process according to a conventional technique.

FIG. 13 is a view for explaining overhang of a copper sputtered thin film.

[Explanation of symbols]

10 ... substrate 12 ... insulating film 13 ₁ , 13 ₂ ...
Concave part 14: Diffusion prevention film 16: Copper CVD thin film 18
₁ , 18 ₂ ... recess 20 ... copper sputtered thin film 25 ₁ , 25 ₂ ... copper wiring

Claims (7)

[Claims] 1. A method for manufacturing a copper wiring, comprising: forming a copper thin film on an insulating film formed on a substrate and provided with a concave portion; filling the concave portion with a copper material to form a copper wiring; Is grown to form a copper CVD thin film, and heat treatment is performed to fluidize the copper CVD thin film. After forming a recess having a narrow bottom and a wide opening in the copper CVD thin film on the concave portion, a sputtering method is used. A method of manufacturing a copper wiring, comprising: forming a copper sputtered thin film; and filling the recess with a copper material of the copper CVD thin film and a copper material of the copper sputtered thin film. 2. The method according to claim 1, wherein the growth of the copper by the CVD method is stopped before the copper CVD thin films formed on the side surfaces in the recess come into contact with each other. 3. The method according to claim 1, wherein the formation of the copper CVD thin film and the heat treatment are repeated. 4. The method according to claim 1, further comprising the step of forming a diffusion barrier film on the substrate. 5. The copper wiring manufacturing method according to claim 1, wherein the thickness of the copper sputtered thin film is larger than the thickness of the copper CVD thin film. 6. Retaining a copper material filled in the recess,
6. The copper wiring according to claim 1, wherein the other portion of the copper material is removed by a chemical mechanical polishing method, and the copper wiring is formed of the copper material filled in the concave portion. Copper wiring manufacturing method. 7. A copper wiring in which a copper material is filled in a recess provided in an insulating film on a substrate, wherein the copper wiring is formed by a CVD method and is a copper CVD thin film fluidized by a heat treatment. A copper wiring comprising: a copper material of (1) and a copper material of a copper sputtered thin film formed by a sputtering method on the fluidized copper CVD thin film.