JP3281816B2 - Copper wiring manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a copper wiring by filling a fine concave portion on the surface of an insulating film with a copper material. , A copper wiring formed by the method, and a CVD apparatus suitable for the method.

[0002]

2. Description of the Related Art At present, an electrode wiring material mainly containing aluminum (Al) is used in a semiconductor integrated circuit because of its easiness in processing.

However, the electrode wiring made of aluminum has a problem in that the resistance to electromigration and stress migration is weak, and as the miniaturization of the semiconductor integrated circuit progresses, many defects occur.

Therefore, it has been conventionally proposed to use tungsten (W) or molybdenum (Mo) having high resistance to electromigration and stress migration instead of the electrode wiring material containing aluminum as a main component. However, since these materials have a large resistance value as compared with aluminum, a signal delay due to a large voltage drop has arisen as a new problem when applied to fine wiring patterns.

In order to solve the problem, the use of copper (Cu) having a small resistance value and excellent electromigration resistance and stress migration resistance as an electrode wiring material has been studied, and various copper wiring manufacturing methods have been proposed. ing.

Among such copper wiring manufacturing methods, CM
The steps of the conventional method using the P method (chemical mechanical polishing method) will be described. Referring to FIGS. 5A to 5C, reference numeral 111 denotes a wiring target, and the insulating film 112 is formed on the substrate 110 and the insulating film 112 formed on the surface thereof by dry etching.
The recess 113 _1, 113 ₂ provided in 12, the insulating film 11
2 has a diffusion prevention film 114 formed over the entire surface (FIG. 5A).

On the wiring object 111, copper is isotropically grown in the recesses 113 ₁ and 113 ₂ by using the CVD method to form a copper thin film 116 (FIG. 2B). Are filled in the recesses 113 ₁ and 113 _{2 with} a copper material constituting
When the copper thin film 116 on the surface is polished and removed by the CMP method, copper wirings 125 ₁ and 125 ₂ are obtained (FIG. 3C).

However, in the above-described copper wiring manufacturing method, although relatively good embedding is completed in the concave portion 113 _{1 having} a narrow groove width (groove width of 0.25 μm or less), the groove width is wide recess 113 _2, there is a case where the cavity 120 is lost occurs. Such a copper wiring 12
5 cavity 120 in _2, in addition to the wire to a high resistance becomes a cause of various defects such as disconnection, resulting in lowering the characteristics and reliability.

When actually forming a wiring pattern, it is necessary to completely fill a concave portion such as a groove or a hole having various aspect ratios formed in the same insulating film with a copper material. it a cavity is formed in the recess 113 in the _2, because that would give a significant constraint on the freedom of the wiring pattern design, its solution has been desired.

[0010]

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned disadvantages of the prior art, and an object of the present invention is to provide a technique capable of forming copper wiring in recesses having different widths by using a CVD method. To provide.

[0011]

According to a first aspect of the present invention, a copper thin film is formed by a CVD method, and a concave portion formed in an insulating film on a substrate is formed by the copper thin film. In a method for manufacturing a copper wiring in which a copper wiring is formed by filling a material with a material, a first CVD step of growing a first copper thin film by a CVD method, and the first copper thin film is formed without exposing the substrate to the atmosphere. A heat treatment step of heating to a temperature range of not less than 450 ° C. and a first heat treatment step;
A second CVD step of growing a second copper thin film on the surface of the copper thin film by a CVD method and filling the wide and narrow recesses of the recesses with the first and second copper thin films. It is a method of manufacturing a copper wiring.

The invention according to claim 2 is characterized in that the first CVD
2. The method according to claim 1, wherein the step of terminating the growth of the first copper thin film before a closed space is formed inside the first copper thin film in the recess.

According to a third aspect of the present invention, there is provided the first CVD method.
The step is the method of manufacturing a copper wiring according to claim 1 or 2, wherein the first copper thin film is grown isotropically.

According to a fourth aspect of the present invention, the first CVD method is provided.
4. The method according to claim 3, wherein the step includes growing the first copper thin film at a temperature of 180 ° C. or less.

According to a fifth aspect of the present invention, there is provided the method of manufacturing a copper wiring according to any one of the first to fourth aspects, wherein a diffusion preventing film is provided on the substrate.

According to a sixth aspect of the present invention, the copper thin film on the substrate is removed by a chemical mechanical polishing method, and a copper wiring is formed by a copper material filled in the concave portion. A copper wiring manufacturing method according to any one of the preceding claims.

Generally, when a copper thin film is formed by the CVD method, copper grows isotropically in the concave portion, the copper thin films formed on the side surfaces of the concave portion adhere to each other, and the inside of the concave portion can be filled with the copper thin film. It has been.

[0018] However, for example, as shown in FIG. 5 (a), and a narrow recess 113 ₁ and a wide recess 113 ₂ width width C
When attempting to fill together with copper material by VD method, a narrow recess 113 in _one width can be filled, the wide recesses 113 in ₂ width, there is a disadvantage that the cavity 120 occurs.

The inventors of the present invention have investigated the surface of a copper thin film formed by the CVD method, and found that when the copper thin film was formed thickly by the CVD method, the surface of the copper thin film was greatly roughened, and pits and the like were generated. It has been found that protrusions have occurred. Therefore, in the narrow recess 113 within ₁ width, but filled so smooth copper film 116 to each other formed on the side surface at the initial growth of the copper is in close contact is completed, in a broad concave portion 113 within ₂ width, filled at that stage Is not completed, and when the copper is further grown and filled, the rough copper thin film 1
It was ascertained that the protruding portion of the 16 rough surface 117 was closed and a cavity 120 was formed underneath (FIG. 5B).

Once the cavity 120 is generated, copper does not grow in the cavity 120 even if the CVD reaction is further advanced, and such a copper thin film 116 is polished by the CMP method to form a copper wiring 125 ₂ . If you do, cavity 1 inside
20 will remain.

It is known that when such cavities are formed in the aluminum thin film, they are eliminated by the reflowing method. However, unlike the aluminum thin film, the copper thin film is not reflowed by heat treatment. It is said that. Actually, when the copper thin film formed on the diffusion preventing film by the sputtering method was heat-treated, fluidization was not observed.

However, the inventors of the present invention have proposed CVD
It has been found that the copper thin film formed by the method cannot eliminate the cavity once formed therein, but can easily fluidize the surface of the copper thin film by a low-temperature heat treatment.

The present invention has been made based on the above findings. That is, when the copper thin film is formed thick by the CVD method, the inside of the narrow concave portion is filled with the copper material, and a cavity is formed in the wide concave portion. Has a CV for forming a copper thin film
Step D is divided into two or more steps so that a thick copper thin film is not formed at one time, and a heat treatment step is provided between each CVD step. If a copper thin film is formed by the method, the concave portion can be filled with a copper material without forming a cavity, so that a cavity is not generated in the copper wiring.

In such a method for manufacturing a copper wiring, it is preferable to provide a diffusion preventing film on the substrate in order to prevent the diffusion of copper.

Also, leaving the copper material filled in the recess,
If the other portion of the copper material is removed by a chemical mechanical polishing method, a copper wiring can be formed in the recess by forming the copper thin film as described above. In the copper wiring thus formed, after the lower copper thin film is fluidized by the heat treatment, the upper copper thin film is formed thereon.

The CVD apparatus for performing the above-described copper wiring manufacturing method has a reaction tank capable of evacuating, providing a film formation region in the reaction tank, disposing a substrate, and causing a CVD reaction. It is configured to form a thin film on the substrate surface, a heating area is provided in a place different from the film formation area in the reaction tank, and the substrate is moved from the CVD area to the heating area and can be heated. By doing so, it is possible to perform the processing continuously without exposing the substrate to the atmosphere.

In this case, exhaust ports are provided in each of the film formation region and the heating region, and when a raw material gas for CVD reaction is introduced into the film formation region and a purge gas is introduced into the heating region, each of the exhaust holes is provided. If the raw material gas and the purge gas are exhausted from the vacuum exhaust holes in the regions so that the gas introduced into each region does not enter another region, the film thickness control becomes easy, and contamination occurs. It is preferable because there is no such thing.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the method of the present invention will be described with reference to the drawings together with an embodiment of the apparatus of the present invention. Reference numeral 3 in FIG. 1 indicates an example of the CVD apparatus of the present invention, and includes a carry-in / out chamber 51, a reaction tank 52, and a transfer chamber 53. The loading / unloading chamber 51 and the reaction tank 52 are airtightly connected to the transfer chamber 53 via gate valves 58 ₁ and 58 ₂ , respectively.

In the reaction tank 52, a substrate transfer area 90 and a first film formation area 3 centered on the substrate moving mechanism 56.
0, and the heating region 40, a second film formation region 80, and a substrate transfer area 90 in front of the gate valve 58 ₂ is provided in this order in the clockwise each by operating the substrate transfer mechanism 56 When the wiring objects in the region are sequentially moved, the first CVD process is performed in the first film formation region 30 to perform the first CVD process.
A first layer of copper thin film (lower layer copper thin film) is formed, and the first layer of copper thin film is fluidized in the heating region 40 to form a second film forming region 8.
0, the next CVD process is performed, and the second copper thin film is formed on the surface.
(Upper copper thin film).

A process of forming a copper wiring on a wiring object indicated by reference numeral 11 in FIG. 4 using the CVD apparatus 3 having such a reaction tank 52 will be described.

The wiring object 11 includes a substrate 10 made of single crystal silicon, an insulator 12 formed of a silicon oxide film formed on the substrate 12, and a concave portion formed on the surface of the insulator 12 by dry etching. 13 ₁ , 13 ₂ ,
A diffusion preventing film formed on the entire surface of the insulating film; The insulating film 12 is formed to have a thickness of 1.0 μm, and the insulating film 12 is slightly formed on the bottom surfaces of the concave portions 13 ₁ and 13 _2.
Are left so that the surface of the substrate 10 is not exposed.

First, the gate valve 58 _{1 of the} CVD apparatus 3
The housed in closed transport room 51 wiring object 11 in a state, after evacuating the inside, opening the gate valve 58 _1, to operate the transfer robot 54 arranged in the conveying chamber 53, the arm 55 The wiring object 11 is placed in the reaction tank 5
2 and placed on the substrate transfer area 90.

Next, the substrate transfer mechanism 56 was operated to move the wiring object 11 in the substrate transfer area 90 to the first film formation area 30.

The first film formation region 30 and the heating region 4 next to the first film formation region 30
FIG. 3 shows a schematic structure of a portion of 0. First film formation region 30
The inside of the heating area 40 and the substrate support 3
1 and 42 are provided, and gas diffusion plates 33 and 43 are provided above the respective substrate support bases 31 and 41. Diffusion prevention plates 32 and 42 are provided on the bottom of the reaction tank 52 so as to surround the substrate supports 31 and 41, and gas diffusion plates 33 and 4 are provided on the ceiling of the reaction tank 52.
3 are provided with diffusion prevention plates 34 and 44. By the diffusion preventing plates 32 and 34, the first
The boundary of the film formation region 30 is formed, and the diffusion prevention plates 42, 4
4 form a boundary of the heating region 40.

Gas inlets 36 and 46 are provided on the ceiling in the first film forming region 30 and the ceiling in the heating region 40, respectively. The gas inlet 36 in the first film forming region 30 A hydrogen gas cylinder and a source gas cylinder are connected via a gas pipe 37 provided with controllers 38 ₁ and 38 ₂ . The gas inlet 4 in the heating area 40
6 is connected to a hydrogen gas cylinder via a gas pipe 47 that mass flow controller 48 ₁ is provided.

The diffusion preventing plate 32,
Exhaust ports 39 and 49 are provided in 42, respectively, and the exhaust ports 39 and 49 are connected to the same exhaust pipe 73 via valves 71 and 72. The valve 7
When the vacuum pumps (not shown) connected to the exhaust pipes 73 are started with the first and second pumps 72 open, the inside of the reaction tank 52 can be evacuated from the respective exhaust ports 39 and 49.

A gap is provided between the diffusion preventing plates 32 and 34 in the reaction region 30 and between the diffusion preventing plates 32 and 34 in the heating region 40, and the wiring object 11 is carried in and out through the gap. The wiring object 11 moved by the above-described substrate transfer mechanism 56 is carried into the first film formation region 30 through the gap between the diffusion prevention plates 32 and 34, and the substrate support table 31 is provided. Placed on top.

[0038] As the substrate support table 31 has a heater (not shown) is provided, close the gate valve 58 _1, energized to the heater, 170 ° C. The temperature of the wiring object 11
In this state, the carrier gas and the raw material gas are introduced into the diffusion prevention plate 34 from the gas introduction port 36, and are scattered on the wiring target 11 through the shower holes 35 provided in the diffusion plate 33 in a large number. The source gas and the carrier gas flowing into the diffusion prevention plate 32 from above the object 11 were exhausted from the exhaust port 39.

In this example, hydrogen gas was used as the carrier gas, and copper, hexafluoroacetylacetone, and vinyltrimethylsilane (Hexafluoroacetylaceto
nateCu (I) vinyltrimetylsilane) (abbreviated as [Cu (hfac) (vtms)]) gas was used.

The flow rates of the carrier gas and the source gas to be introduced are controlled by mass flow controllers 38 ₁ and 38 ₂ , and the exhaust speed is controlled by a control valve 74. The flow rate of the carrier gas is 600 sccm and the supply amount of the source gas is 0.5 g. / Min, and the film forming pressure was set to 3.0 Torr.

When a CVD reaction was performed under the above conditions, a first-layer copper thin film 16 having a thickness of 1500 ° was formed on the surface of the wiring object 11 (FIG. 4B). The deposition rate at this time is 3
00 ° / min.

When observing the surface of the copper thin film 16 of the first layer,
The portion of the recess 13 _1, 13 on _2, space 21 ₁ sectional narrow groove shape reflecting their shape, 21 ₂ has been formed.
However, less time of the CVD reaction, since the thickness of the copper thin film 16 is thin, the surface roughness is small, cavities in the recess 13 _1, 13 in ₂ occluded was not formed.

Next, the wiring object 11 on which the copper thin film 16 was formed was transported from the first film forming area 30 into the heating area 40, and was placed on the substrate support 41. At this time, the next wiring target that has already been carried into the substrate transfer area 90 has been carried into the first film formation area 30.

After placing the wiring object 11 on the substrate support 41, a purge gas is introduced from a gas inlet 46, and the wiring object 11 is introduced through a shower hole 45 provided in the diffusion plate 43.
The purge gas which is scattered upward and flows into the diffusion prevention plate 42 from the surface of the wiring object 11 is exhausted from the exhaust port 49 so that the purge gas does not flow out of the heating area 40 and is provided on the substrate support 41. (Not shown), the wiring object 11 was heated to 400 ° C.

When such a heat treatment (annealing treatment) is performed for 10 minutes, the copper thin film 16 on the wiring object 11 is fluidized, and the copper material constituting the copper thin film 16 flows into the concave portions 13 ₁ and 13 ₂ , The above-mentioned spaces 21 ₁ and 21 ₂ are deformed, the bottoms are narrow, and the openings are wide and the openings 22 ₁ and 22 2 have a mortar-shaped cross section.
2 ₂ is formed (FIG. 4 (c)).

At this time, the source gas and the carrier gas are introduced on the next wiring object carried into the first film formation region 30 and the CVD reaction is performed. Is exhausted from the exhaust port 39, and the carrier gas is supplied to the heating area 40 and exhausted from the exhaust port 49 in the heating area. And no carrier gas enters. The evacuation speed in the film formation region 30 and the heating region 40 is adjusted by the control valve 74 to keep the balance.

After the heat treatment, the wiring object 11 is moved from the heating area 40 to the second film forming area 8 by the substrate transport mechanism 56.
Transported within 0. At the same time, the wiring object on which the copper thin film formation in the first film forming area 30 has been completed is transported to the heating area 40, and the wiring object placed on the substrate transfer area 90 is moved to the first area. To the film formation region 30.

In the second film formation region 80, a CVD process is performed under the same conditions as the CVD reaction in the first film formation region 30, and a second copper thin film 18 is formed on the fluidized copper thin film 16. did. By the second CVD process, the depressions 22 ₁ and 22 ₂ formed in the copper thin film 16 after fluidization were filled with the copper material of the second copper thin film 18, and no cavity was formed ( FIG. 4 (d)).

At this time, in the heating region 40, a heat treatment is performed on the wiring object on which the copper thin film is formed in the first film formation region 30, and in the first film formation region 30, the heat treatment is performed on the insulating film. A first copper thin film is formed on the surface of the concave portion via a diffusion preventing film. As described above, even when the processing of the wiring object is performed simultaneously in each region, the gas introduced into each region does not enter another region.

The wiring object 11 on which the copper thin film 18 of the second layer is formed is transferred from the second film formation area 80 to the substrate transfer area 9.
After conveyed to 0, taken out of the reaction vessel 52 through the transfer chamber 53 to the transport room 51, and introducing the atmosphere into the transport room 51 in the closed state of the gate valve 58 ₁ was taken out from the CVD apparatus 3.

When the surface of the wiring object 11 is polished by the CMP method, the recesses 13 ₁ and 13 ₂ are sufficiently filled with the copper material of the first-layer copper thin film 16 and the second-layer copper thin film 18. ,
Copper wirings 5 ₁ and 5 ₂ without cavities were obtained (FIG. 4E).

In the above, the case where the CVD process is divided into two times and the heat treatment process is provided between them has been described. However, when it is desired to form a thick copper thin film, etc., the CVD process is divided into three or more times. A heat treatment step may be provided between the steps, and a thin copper thin film may be formed in one CVD step.

[0053] Taking as an example the case of dividing the CVD process three times, as the reaction vessel indicated by reference numeral 62 in FIG. 2, Place substrate transfer area 71 in front of the gate valve 78 _2, the substrate transfer mechanism 79 As the center, the film formation regions 72, 74, 76
And the heating regions 73 and 75 are arranged alternately in a clockwise direction to constitute a CVD apparatus, and a wiring object can be sequentially processed in each region.

On the other hand, a CVD apparatus having a plurality of CVD chambers and heating chambers each capable of independently evacuating, as in a conventional multi-chamber type vacuum film forming apparatus, without using the above-described reaction tanks 52 and 62, is used. The wiring target may be used to process the wiring object. Further, the wiring object may be repeatedly moved between the same CVD chamber and the heating chamber for processing. In short, in the method of the present invention, the CVD process may be divided into a plurality of processes, and a heat treatment process may be provided therebetween to process the wiring object. The heat treatment step is not limited to the case where it is provided during all of the divided CVD steps, and when copper is deposited by a CVD reaction, a copper thin film is fluidized before a cavity is formed,
It is sufficient that a copper thin film can be further formed thereon by the CVD method.

In the wiring object described above, the recesses 13 ₁ and 13 ₂ formed in the insulating film have a narrow groove shape, but the shape of the recess is not limited to this. Further, the insulating film 12 is provided under the diffusion prevention film 14 on the bottom surface of the recesses 13 ₁ and 13 ₂ , and the diffusion prevention film 14 is not in contact with the surface of the substrate 10. Also, a copper wiring can be formed by applying the method of the present invention after forming a diffusion prevention film as necessary also for a via hole in which the surface of a lower metal wiring is exposed.

The diffusion preventing film is made of TiN in the above embodiment.
Although a thin film was used, the diffusion barrier film that can be used in the present invention is not limited thereto. The diffusion preventing film is a thin film capable of preventing copper from diffusing into an insulating film or an oxide film. For example, a high melting point metal such as TiW, Ta, Mo, W, or a compound of such a high melting point metal can be used. .
The single layer film may constitute the diffusion prevention film, or the multilayer film may be formed to constitute the diffusion prevention film. The formation of the diffusion prevention film is not limited to the sputtering method, and various thin film forming methods such as a CVD method can be used.

The insulating film according to the present invention is not limited to a silicon oxide film, but includes various insulating thin films such as a silicon nitride film. The substrate is not limited to a silicon substrate. The copper thin film and the copper material widely include a metal thin film and a metal material containing copper as a main component.
For example, when a copper thin film is grown by the CVD method, a copper thin film in which a gas containing another metal is added to improve characteristics and a copper thin film in which the copper thin film is fluidized are also included.

The CVD method for forming such a copper thin film is not limited to the case where the substrate temperature is set to 170 ° C., but the raw material gas for the copper thin film used in the present embodiment can be formed at a high temperature. Since the supply of the film reaction is rate-determined and an isotropic copper thin film cannot be grown, and an overhang is likely to occur at the opening end of the concave portion, it is desirable to perform the CVD method at a substrate temperature of 180 ° C. or lower.

The temperature of the heat treatment step for heating the copper thin film is not limited to 400 ° C. described above. When performed at a high temperature, the processing time is shortened, which is desirable from the viewpoint of cost. However, it is necessary to perform at a temperature at which copper does not diffuse into the insulating film or the substrate. When TiN is used as a diffusion prevention film,
If the temperature exceeds 600 ° C., the barrier properties decrease, so it is necessary to lower the temperature. However, TiN
Depending on the film quality, the barrier property of a diffusion prevention film such as a film may be deteriorated at a temperature of 600 ° C. or less.

The purge gas used in the heat treatment is not necessarily limited to hydrogen gas, and various gases can be used. Further, the copper thin film can be fluidized only by heating in a vacuum without using a purge gas.

In the above embodiment, the case where the surface is polished by the CMP method has been described. However, a polishing method and an etching method which can remove the copper thin film on the surface of the insulating film while leaving the copper material in the concave portion are widely used. it can.

[0062]

According to the method of the present invention, recesses having a high aspect ratio and recesses having a low aspect ratio can be filled with a copper material.
Also, since there is no cavity in the copper wiring, it has excellent characteristics,
A highly reliable copper wiring can be obtained.

According to the CVD apparatus of the present invention, the interface of the copper thin film is not exposed to the air and contamination by impurities does not occur, so that the reliability of the copper wiring is improved. Further, since the CVD reaction and the heat treatment can be continuously performed, the efficiency of the copper wiring manufacturing process is improved.

[Brief description of the drawings]

FIG. 1 shows an example of a CVD apparatus of the present invention.

FIG. 2 shows another example of a reaction tank of the CVD apparatus.

FIG. 3 is a view for explaining an internal structure of a reaction tank of the CVD apparatus of the present invention.

FIGS. 4A to 4E are diagrams for explaining a copper wiring manufacturing process of the present invention.

FIGS. 5A to 5C are diagrams for explaining a conventional copper wiring manufacturing process.

[Explanation of symbols]

3 ...... CVD device 5 _1, 5 ₂ ...... copper wiring 10 ......
Substrate 12 ... Insulating film 13 ₁ , 13 ₂ ... Recess 14 ...
Anti-diffusion film 16, 18 Copper thin film 52, 62 Reaction tank 30, 80; 72, 74, 76 Film formation area 40; 73, 75 Heating area

Continuation of the front page (56) References JP-A-7-211776 (JP, A) JP-A-5-275369 (JP, A) JP-A 7-115073 (JP, A) JP-A-6-188205 (JP) (A) JP-A-5-251353 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/3205 H01L 21/321 H01L 21/3213 H01L 21/768 H01L 21/28 -21/288 H01L 21/44-21/445 H01L 29/40-29/43 H01L 29/47 H01L 29/872 H01L 21/205 H01L 21/365

Claims (6)

(57) [Claims] A copper thin film is formed by a CVD method, a concave portion formed in an insulating film on a substrate is filled with a copper material of the copper thin film, and a copper wiring is formed. 1st CV for growing 1 copper thin film
D. forming the first copper thin film on the substrate without exposing the substrate to the atmosphere;
A heat treatment step of heating to a temperature range of 0 ° C. or higher and 450 ° C. or lower;
Growing a second copper thin film by the method,
A method for manufacturing a copper wiring, comprising a second CVD step of filling a wide concave portion and a narrow concave portion with the first and second copper thin films. 2. The method according to claim 1, wherein in the first CVD step, the growth of the first copper thin film is completed before a closed space is formed inside the first copper thin film in the recess. Copper wiring manufacturing method. 3. The method according to claim 1, wherein the first CVD step comprises growing the first copper thin film isotropically. 4. The method according to claim 3, wherein said first CVD step comprises growing said first copper thin film at a temperature of 180 ° C. or less. 5. The method according to claim 1, wherein a diffusion preventing film is provided on the substrate.
The method of manufacturing a copper wiring according to claim 1. 6. The copper wiring according to claim 1, wherein the copper thin film on the substrate is removed by a chemical mechanical polishing method, and a copper wiring is formed by a copper material filled in the recess. Copper wiring manufacturing method.