JPH1070089A - Equipment for forming semiconductor device and method of forming semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an equipment and a method for excellently performing a reflow process for reducing the imperfect operation of an FET which is to be caused by imperfect contact. SOLUTION: This equipment of forming a semiconductor is provided with at least a first reaction chamber 105 and a second reaction chamber 108 which can independently control atmosphere, have air-tightness, and are linked with each other. In the first reaction chamber 105, a film of aluminum or a film whose main component is aluminum is formed by a sputtering method. In the second reaction chamber 108, heat treatment is performed, and fluidity is imparted to at least a part of the film of aluminum or the film whose main component is aluminum.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD [0001] The invention disclosed in the present specification is:
The present invention relates to a technique for forming a wiring contact with an electrode or a wiring mainly containing aluminum or an active layer of a thin film transistor.

[0002]

2. Description of the Related Art Recently, a technique for manufacturing a thin film transistor (TFT) on an inexpensive glass substrate has been rapidly developed. The reason is that the demand for the active matrix type liquid crystal display device has increased.

An active matrix type liquid crystal display device is
TFTs are arranged in each of the millions of pixels arranged in a matrix, and the charge flowing into and out of each pixel electrode is determined by T
It is controlled by the switching function of the FT.

Further, a circuit TFT for driving the pixel TFT is incorporated in a peripheral driving circuit, and a liquid crystal and a pixel TFT are driven.
In general, an integrated circuit in which a display pixel portion and a drive circuit portion including a circuit TFT are formed on the same substrate has become common.

[0005]

As described above, since the integrated circuit of the active matrix type liquid crystal display device is composed of millions of pixel TFTs and hundreds or more of circuit TFTs, it is natural that However, production yields are inevitable.

For example, if one pixel TFT does not operate, the pixel electrode connected thereto loses its function as a display element. This causes a so-called point defect. In the case of a normally black liquid crystal display device, a point defect appears as a black point when displaying white, which greatly impairs the appearance.

If the circuit TFT does not operate, all the pixel TFTs to which the drive voltage is applied from the circuit TFT do not function as switching elements. This causes a so-called line defect, which is a fatal obstacle for the liquid crystal display device.

Accordingly, the active matrix type liquid crystal display device has a multi-million TFT functioning normally for a long time,
It must be able to maintain stable operation. However, at present, it is extremely difficult to completely eliminate point defects and line defects. One of the causes is
There is a contact failure.

A contact failure is an operation failure that occurs when a connection failure (hereinafter referred to as a contact) between a wiring electrode and a TFT causes a connection failure. In particular, in the planar type TFT, the wiring electrode and the TFT are electrically connected via a thin opening (contact hole), so that the contact failure is a serious problem.

[0010] Contact failure is a major cause of early deterioration of semiconductor element characteristics, and particularly when a large current flows or high-temperature operation, the deterioration is accelerated. Therefore, it is said that the reliability of the contact determines the reliability of the semiconductor element.

Generally, in the case of a pixel display region in an active matrix type liquid crystal display device, the source electrode is drawn out of the pixel display region as it is, so that there is only a contact with the semiconductor layer of the TFT.

In the case of a peripheral drive circuit, there are several hundred thousand to several million contacts. In particular, the presence of the contact of the gate electrode and the rise in temperature due to the large current operation mean that the contact is required to have a reliability higher than that of the pixel display area.

The causes of the contact failure can be roughly classified into three. A first cause is that the conductive film forming the wiring electrode and the semiconductor film forming the source / drain of the TFT are not in contact with each other by ohmic junction.

This is because an insulating film, for example, a metal oxide or the like is formed on the joint surface. The state near the semiconductor film surface (impurity concentration, defect state density, cleanliness, etc.) greatly affects the performance of the contact.

The second cause is that the coverage of the conductive film forming the wiring electrode is poor and the wire is disconnected in the contact hole. In this case, it is necessary to improve by the film forming method and the film forming condition of the wiring electrode.

A third cause is a disconnection of a wiring electrode caused by a sectional shape of a contact hole or the like. Cross-sectional shape of the contact hole is strongly dependent on the etching conditions of the insulator covered by the contact portion (SiN, SiO _2, etc.).

In particular, scouring and blowholes (nests) formed by over-etching are serious problems because they significantly deteriorate coverage. As an example,
The formation of scouring in the gate electrode will be described with reference to FIG.

FIG. 14 is an enlarged view of a contact hole portion for contacting a gate electrode of a planar type thin film transistor and a wiring.

In FIG. 14A, reference numeral 11 denotes a gate electrode, and the gate electrode 11 is made of a metal material made of an anodizable material, here, a material mainly containing Al (aluminum). Although a gate insulating film, a semiconductor layer, and the like exist under the gate electrode 11, they are omitted for simplification of the drawing.

Reference numeral 12 denotes an anodized film (Al ₂ O) formed by anodizing the gate electrode 11 in an electrolytic solution.
₃ as a main component). The anodic oxide film 12 is a very dense and strong film, and has a role of protecting the gate electrode 11 from heat during heat treatment and suppressing generation of hillocks and whiskers.

Further, on the gate electrode 11, an interlayer insulating film indicated by 13 is formed. This interlayer insulating film 1
As 3, a silicide film such as a silicon oxide film, a silicon nitride film, and a silicon oxynitride film can be used.

Then, the contact hole 14 is formed by etching the interlayer insulating film 13 by a wet etching method or a dry etching method. In order to form the contact hole 14, first, the interlayer insulating film 13 which is a silicide film is etched, and then the anodic oxide film 12 is formed.
Must be etched.

However, since the anodic oxide film 12 is a very dense and strong film, it takes a certain amount of time for etching. Therefore, when the isotropic etching is performed, the etching considerably proceeds in the lateral direction, and the scooped portion 15 as shown in FIG. 14B is formed.

FIG. 14C shows a state where the wiring electrode 16 is formed in this state. As shown in FIG. 14 (C), the undercut portion cannot be covered with the wiring electrode 16 and causes a disconnection.

If the over-etching at the end of the etching of the anodic oxide film is long, the etching of the gate electrode 11 progresses little by little, and a blow hole may be formed. Also in this case, disconnection of the wiring is a problem.

An object of the present invention disclosed in the present specification is to provide an apparatus and a method for solving the above problem and favorably performing a step of reducing a TFT operation failure due to a contact failure.

[0027]

Means for Solving the Problems In order to solve the above-mentioned problems, one of the main constitutions disclosed in the present specification is a first and a second which have airtightness and can control atmosphere independently. Wherein the first and second reaction chambers are connected in an airtight manner. In the first reaction chamber, aluminum or a film containing aluminum as a main component is formed on a substrate. Wherein the second reaction chamber is configured to impart fluidity to at least a part of the aluminum or the film containing aluminum as a main component.

One of the other structures has at least first and second reaction chambers which are airtight and whose atmosphere can be controlled independently, and the first and second reaction chambers are airtight. In the first reaction chamber, aluminum or a film containing aluminum as a main component containing an element imparting fluidity to aluminum is formed on a substrate in the first reaction chamber; Is a device for manufacturing a semiconductor device, characterized by imparting fluidity to at least a part of the aluminum or the film containing aluminum as a main component.

One of the other structures has at least first, second and third reaction chambers which are airtight and can independently control the atmosphere, and wherein the first, second and third reaction chambers are provided. Are connected in an airtight manner. In the first reaction chamber, aluminum or a film containing aluminum as a main component is formed on a substrate, and in the second reaction chamber, the aluminum Alternatively, a film containing an element which imparts fluidity to the film is formed on a film mainly containing aluminum, and the third film is formed.
In the above reaction chamber, at least a part of the aluminum or the film containing aluminum as a main component is imparted with fluidity, which is an apparatus for manufacturing a semiconductor device.

One of the other structures has at least first, second and third reaction chambers which are airtight and can independently control the atmosphere, and wherein the first, second and third reaction chambers are provided. The reaction chambers are connected in an airtight manner, and in the first reaction chamber, a film containing aluminum or an element giving fluidity to a film containing aluminum as a main component is formed on a substrate,
In the second reaction chamber, a film containing aluminum or aluminum as a main component is formed on the film, and in the third reaction chamber, at least a portion of the film containing aluminum or aluminum as a main component has fluidity. And a semiconductor device manufacturing apparatus.

One of the other main inventions disclosed in the present specification is a first and second reaction which are airtight, airtightly connected, and independently controllable in atmosphere. A method for manufacturing a semiconductor device using a chamber, wherein a film containing aluminum or aluminum as a main component is formed over a substrate in the first reaction chamber, and the aluminum or aluminum is formed in the second reaction chamber. A method for manufacturing a semiconductor device, wherein energy is applied to a film containing a main component to impart fluidity to at least part of the aluminum or the film containing aluminum as a main component.

Another structure is a method of manufacturing a semiconductor device using first and second reaction chambers which are airtightly connected and airtightly and can independently control the atmosphere. In the first reaction chamber, an aluminum film containing aluminum or an element that imparts fluidity to a film containing aluminum as a main component is formed on a substrate, and energy is applied to the aluminum film in the second reaction chamber. Wherein a fluidity is imparted to at least a part of the aluminum film.

Another construction is to fabricate a semiconductor device using first, second and third reaction chambers which are airtight and airtightly connected and whose atmosphere can be controlled independently. In the first reaction chamber, a film containing aluminum or an element imparting fluidity to a film containing aluminum as a main component is formed on a substrate in the first reaction chamber, and the film is formed on the film in the second reaction chamber. Forming a film containing aluminum or aluminum as a main component in the third reaction chamber, and applying energy to the film containing aluminum or aluminum as a main component in the third reaction chamber to impart fluidity to at least a part thereof. A method for manufacturing a semiconductor device.

Another structure is to fabricate a semiconductor device using first, second and third reaction chambers which are air-tight and air-tightly connected and whose atmosphere can be controlled independently. In the first reaction chamber, a film mainly containing aluminum or aluminum is formed on a substrate in the first reaction chamber, and the film mainly containing aluminum or aluminum is formed on the film in the second reaction chamber. Forming a film containing an element imparting fluidity to the film, applying energy to the aluminum or the film containing aluminum as a main component in the third reaction chamber, and imparting fluidity to at least a part of the film. A method for manufacturing a semiconductor device.

One of the other structures is a film forming step of forming aluminum or a film containing aluminum as a main component, which is electrically connected to at least a part of the semiconductor device through a contact hole formed in the interlayer insulating film. And a reflow step of causing the aluminum or the film containing aluminum as a main component to have substantial fluidity by heat treatment, wherein the film forming step and the reflow step are performed by exposing the film to the atmosphere in the process. A method for manufacturing a semiconductor device, which is not performed.

In the apparatus and the method having the above-mentioned respective structures, the first and second reaction chambers and the third reaction chamber are connected via a substrate transfer chamber which is airtight and can be independently controlled in atmosphere. And are connected. In this configuration, when transferring the substrate from the first reaction chamber to the second reaction chamber and from the second reaction chamber to the third reaction chamber, the substrate is transferred via the substrate transfer chamber. Conveyed.

In each of the above structures of the apparatus and the method, each film is formed by a sputtering method.

Other than the sputtering method, an evaporation method, a plasma CVD method, a low pressure CVD method, or the like can be used.

In each of the above structures, the aluminum or the element that imparts fluidity to the film containing aluminum as a main component is preferably one or more elements selected from those belonging to Groups 12 to 15. .

In particular, germanium (Ge), tin (S
n), gallium (Ga), zinc (Zn), lead (Pb),
It is effective to use one or more elements selected from indium (In) and antimony (Sb).

These elements can bring about fluidity at a temperature of 450 ° C. or lower to the aluminum or the film containing aluminum as a main component.

In each of the above structures, in order to impart fluidity to aluminum or a film containing aluminum as a main component, the film is irradiated with a heater or means for irradiating strong light such as ultraviolet light or infrared light. Give energy.

The reflow step is a step for the purpose of imparting fluidity to the metal film forming the wiring electrode by heat treatment. By a reflow process at a temperature of 450 ° C. or less, aluminum or a film containing aluminum as a main component constituting a wiring electrode easily shows fluidity without breaking a cut portion or a blow hole in a contact hole. Can be coated.

[0044]

【Example】

[Embodiment 1] In this embodiment, a multi-chamber type sputtering apparatus for continuously performing a film formation-reflow process will be described. FIG. 1 is a configuration diagram of a multi-chamber type sputtering apparatus of the present embodiment, and FIG. 2 is a cross-sectional configuration diagram along AA ′ of FIG.

The multi-chamber type sputtering apparatus includes a transfer chamber 101, a load chamber 102, an unload chamber 103, sputter chambers 104 to 107, a heating chamber 108, and a slow cooling chamber 109.
The chambers 103 to 109 are connected around the transfer chamber 101 by gate valves 110 to 117, respectively.

The transfer chamber 101 is provided with a substrate transfer means 118 for transferring the substrate 100. Substrate transfer means 11
According to 8, the substrate 100 is transferred to each of the chambers 103 to 109 via the substrate transfer chamber 101.

The load chamber 102 is a chamber for carrying a processing substrate from the outside into the sputtering apparatus, and the substrate is carried into the load chamber 102 in a state of being stored in a cassette.

The load chamber 102 is for removing impurity gases such as H ₂ O and N ₂ adsorbed on the surface of the processing substrate.
A plasma cleaning unit using e gas or the like is provided, and a unit for transporting a substrate from the cassette to the plasma cleaning unit is also provided.

The unload chamber 103 is a chamber for carrying out a processing substrate to the outside of the sputtering apparatus. Further, the unload chamber 103 is provided with a nitrogen purging means so that the substrate on which the film formation / reflow processing has been completed can be purged with nitrogen. The substrate after the nitrogen purge process is
The substrates are sequentially stored in the cassettes installed in the unloading chamber 103, and the substrates together with the cassettes are carried out of the apparatus.

As shown in FIG. 2, the transfer chamber 101, the sputtering chamber 104, and the heating chamber
21 to 123 and evacuation pumps 124 to 126 are provided. By closing the gate valves 110 to 117, the atmosphere and pressure can be controlled independently for each of these chambers.

Similarly, the other chambers 102 and 103, the sputtering chambers 104 to 107, and the cooling chamber 109 are also provided with a gas introduction pipe and a vacuum exhaust pump. Control is possible.

Further, as shown in FIG. 2, a stage 201 for setting the substrate 200 is provided in the sputtering chamber 104. The stage 201 has a built-in heater and can control the substrate 200 to a desired temperature.

A target 202 is held by a holder 203 so as to face the stage 201. A DC or AC electric field is applied between the stage 201 and the holder 203 by the power supply 204 to perform sputtering.

Further, the sputtering chamber 104 can be evacuated by a vacuum exhaust pump 125 to the order of the ultimate vacuum degree of 10 ^-9 Torr. The ultra-high vacuum in the sputtering chamber 104 is used to prevent impurities such as nitrogen, oxygen, and carbon from being mixed into the formed metal film.

In order to realize an ultra-high vacuum on the order of 10 ^-9 Torr, a vacuum pump 125 is a turbo molecular pump,
What is necessary is just to comprise a compound molecular pump or a cryopump. Alternatively, a turbo molecular pump, a composite molecular pump, and a cryopump may be combined.

The other sputtering chambers 105 to 10 in FIG.
7 also has the same structure as the sputtering chamber 104, and the substrate 202 can be selected by appropriately selecting the target 202.
A desired film can be formed on the surface of the substrate.

The heating chamber 108 is a chamber for performing a reflow process, and can heat a plurality of substrates simultaneously.
As shown in FIG. 2, the heating chamber 108 includes a plurality of substrates 21.
A substrate holder 211 in which 0 can be arranged is provided, and the substrate holder 211 can be moved up and down by an elevator 212.

The substrate 210 is transferred from the transfer chamber 101 to the heating chamber 108 by the transfer means 118 and
11. The substrate 212 is moved upward or downward by the elevator 212 in accordance with the timing at which the substrate is transported, and the substrate 219 is placed in the substrate holder 211.
Are sequentially placed.

The heater 2 surrounds the periphery of the substrate holder 211.
13 is provided, whereby the substrate 210 is heated to a predetermined temperature.

The slow cooling chamber 109 shown in FIG. 1 has substantially the same structure as the heating chamber 108, and is a chamber for gradually lowering the substrate temperature while controlling the temperature with a heater.

With the sputtering apparatus having such a configuration, T
i, a film mainly composed of a material constituting the wiring electrode (for example, a film mainly composed of Al), a film mainly composed of an element imparting fluidity to the material constituting the wiring electrode, and the like. A film forming step, a reflow step by heating, a subsequent cooling / gradual cooling step, a film forming step for improving the ohmic contact of Ti or the like, and the like can be continuously performed in the same atmosphere. In addition, the order of the steps can be as desired.

In other words, these steps can be performed without exposing the substrate to the outside air. As a result, it is possible to perform a good reflow process without oxidizing or contaminating the uppermost surface of the stacked film before the reflow process.

That is, when heating for performing reflow, the fluidity may be increased from the uppermost surface of the laminated film. In such a case, if the upper surface of the stacked film is oxidized by being exposed to another atmosphere, particularly an oxidizing atmosphere, or is contaminated with impurities, good reflow cannot be performed.

At the stage before reflow, when the uppermost surface of the laminated film is a film mainly composed of aluminum which is easily oxidized,
It is especially important to avoid exposure to the atmosphere.

Of course, it is extremely advantageous that the interface of each film constituting the laminated film is not oxidized or contaminated, in order to achieve good reflow and wiring connection.

In particular, a film containing aluminum as a main component;
The interface with the film whose main component is an element that imparts fluidity to the film whose main component is aluminum when heated at 450 ° C. or lower is
Regardless of which film is the top surface, it must not be exposed to the atmosphere.

Otherwise, the diffusion of an element imparting fluidity to a film containing aluminum as a main component into the aluminum film is impeded, and reflow cannot be performed.

Instead of using the heater 213 as the heating chamber 108, a lamp or the like for irradiating strong light such as infrared light or ultraviolet light is disposed in the chamber, and reflow is performed by RTA (rapid thermal annealing). May be performed.

[Embodiment 2] In this embodiment, an example will be described in which reflow is performed when a wiring electrode of a thin film transistor is manufactured by using the multi-chamber type sputtering apparatus shown in Embodiment 1. FIGS. 3 and 4 show a manufacturing process of the thin film transistor (TFT) of this embodiment.

First, as shown in FIG. 3A, a glass substrate 301 having an insulating surface is prepared, and silicon oxynitride (indicated by SiO _x N _y ) 302 serving as a base film is deposited at 2000 °.
To a thickness of Alternatively, a silicon oxide film or a silicon nitride film may be used.

An amorphous silicon film (not shown) having a thickness of 500 ° is formed thereon by a plasma CVD method or a low pressure thermal CVD method, and crystallized by a suitable crystallization method. This crystallization may be performed by heating or irradiation with laser light. Further, at the time of crystallization, an element which promotes crystallization may be added.

Next, the crystalline silicon film obtained by crystallizing the amorphous silicon film is patterned to form an island-shaped semiconductor layer 303 constituting an active layer.

On top of this, a silicon oxide film 304 later functioning as a gate insulating film was formed to a thickness of 1500 °. The silicon oxide film 304 may be formed by a plasma CVD method or a low pressure thermal CVD method.

Next, a metal thin film 305 made of aluminum or a material containing aluminum as a main component is formed to a thickness of 4000 °. This aluminum film 305 functions as a gate electrode later.

Next, the aluminum film 305 is placed in an electrolytic solution.
Is used as an anode to perform anodic oxidation. As the electrolytic solution, 3
% Tartaric acid in ethylene glycol was neutralized with aqueous ammonia to adjust the pH to 6.92.
In addition, using platinum as a cathode, the formation current is 5 mA, and the ultimate voltage is 10 mA.
Process as V.

Thus, a dense anodic oxide film (not shown) is formed on the surface of aluminum film 305. This anodic oxide film has the effect of increasing the adhesion to the photoresist.
Note that the thickness of the formed anodic oxide film can be controlled by controlling the voltage application time (FIG. 3A).

After the state shown in FIG. 3A is obtained, the aluminum film 305 is patterned to form an aluminum electrode (not shown) which will later constitute a gate electrode and an anodic oxide film.

Next, a second anodic oxidation is performed to form a porous anodic oxide film 306. The electrolytic solution is a 3% oxalic acid aqueous solution, and a formation current is 2-3 mA using platinum as a cathode.
The processing is performed with a reaching voltage of 8V.

At this time, the anodic oxidation proceeds in a direction parallel to the substrate, and a porous anodic oxide film 306 is formed on the side surface of the aluminum electrode. By controlling the voltage application time, the length of the porous anodic oxide film 306 can be controlled. In this embodiment, the length is adjusted to 0.7 μm.

After the photoresist is removed with a dedicated stripper, a third anodic oxidation is performed to obtain the state shown in FIG. After three anodizing steps, the aluminum electrode remaining without being anodized becomes the gate electrode 308.

In the third anodic oxidation step, the electrolytic solution is
% Tartaric acid in ethylene glycol was neutralized with aqueous ammonia to adjust the pH to 6.92.
In addition, platinum was used as a cathode and the formation current was 5 to 6 mA, and the treatment was performed at an ultimate voltage of 100 V.

The anodic oxide film 307 formed at this time is very dense and strong. Therefore, the dense anodic oxide film 307 has an effect of protecting the gate electrode 308 from damage caused in a subsequent step such as a doping step and the heat of heat treatment.

Next, an impurity is implanted into the island-shaped semiconductor layer 303 by an ion doping method. For example, when an N-channel TFT is manufactured, P (phosphorus) may be used as an impurity.

First, the first ion doping is performed in the state shown in FIG. The implantation of P (phosphorus) is performed at an acceleration voltage of 60 to 90 kV and a dose of 0.2 to 5 × 10 ¹⁵ atoms / cm.
Perform in ² . In this embodiment, the acceleration voltage is 80 kV and the dose is 1 × 10 ¹⁵ atoms / cm ² .

Then, the gate electrode 308 and the porous anodic oxide film 306 are used as a mask, and regions 309 and 310 which will later become the source / drain are formed in a self-aligned manner.

Next, as shown in FIG. 3C, after removing the porous anodic oxide film 306, a second doping is performed. The second injection of P (phosphorus) is performed at an accelerating voltage of 60 to
It is performed at 90 kV and a dose of 0.1 to 5 × 10 ¹⁴ atoms / cm ² . In this embodiment, the accelerating voltage is 80 kV and the dose is 1 × 1.
0 was ¹⁴ atom / cm ^2.

Then, low concentration impurity regions 311 and 312 having a lower impurity concentration than source region 309 and drain region 310 are formed in a self-aligned manner, with gate electrode 308 and anodic oxide film 307 around gate electrode 308 serving as a mask. You.

At the same time, since no impurity is implanted immediately below the gate electrode 308, a channel forming region 313 functioning as a TFT channel is formed in a self-aligned manner. Further, an offset region (not shown) to which the gate voltage is not applied is formed by the thickness of the anodic oxide film 307.

Generally, the low-concentration impurity region 312 on the drain region 319 side is called an LDD region and has an effect of suppressing the formation of a high electric field between the channel forming region 313 and the drain region 310.

Next, irradiation with KrF excimer laser light and thermal annealing are performed. The energy density of the laser beam is 25
0 and ~300mJ / cm ^2, the temperature of the thermal annealing is 300 to 450 ° C.
The heating time is several hours. In this embodiment, the energy density of the laser beam was set to 300 mJ / cm ^2, thermal annealing 40
Heated at 0 ° C. for 1 hour.

According to this step, the crystallinity of the island-shaped semiconductor layer 303 damaged in the ion doping step is improved. At this time, the crystallinity can be further improved by adding a hydrogenation treatment at 350 ° C. for 1 hour.

Next, as shown in FIG. 3D, a first interlayer insulating film 314 made of a silicon oxynitride film is formed by plasma CVD.
It was formed by a method. This interlayer insulating film 314 may be a silicon oxide film or a silicon nitride film. Further, a multilayer structure may be used.

Next, as shown in FIG. 4A, contact holes 321 and 322 for electrically connecting the source electrode and the gate wiring to the TFT are formed. In this embodiment, these contact holes 321 and 322 are formed by a wet etching method using buffered hydrofluoric acid.

At this time, openings for the source contact portion 321 and the gate contact portion 322 were formed simultaneously. This technique is desirable in reducing the number of times of patterning and simplifying the process.

First, in the source contact portion 321, the first interlayer insulating film 314 and the gate insulating film 304 are etched in this order, and the source region 30 of the island-shaped semiconductor layer 303 is etched.
9 is exposed.

On the other hand, in the gate contact portion 322, the etching is still in progress because the etching rate of the anodic oxide film 307 is low. Further, when the anodic oxide film 307 is etched with a hydrofluoric acid-based etchant, the etching proceeds non-uniformly, so that the etching of the gate electrode 308 also proceeds simultaneously from the portion where the etchant has penetrated.

Therefore, when the etching of the anodic oxide film 307 is completed, over-etching proceeds in the source portion, and the gate electrode 308 is eroded in the gate portion, so that the structure shown in FIG.
Contact hole 3 having a recessed portion as shown in FIG.
21, 322 are formed.

Hereinafter, a process for forming a wiring in the contact holes 321 and 322 having such a recessed portion will be described.

After forming the contact holes 321 and 322, film formation and reflow are continuously performed using the multi-chamber type sputtering apparatus shown in FIGS.

In the apparatus shown in FIG.
The targets arranged at 04 to 107 have the following composition. The sputtering chamber 104 is made of titanium (Ti), the sputtering chamber 105 is made of aluminum (Al) added with 2% of copper, the sputtering chamber 106 is made of tin (Sn), and the sputtering chamber 107 is made of titanium (Ti).

First, a plurality of substrates having undergone the process up to the state shown in FIG. 4A are stored in a cassette, and the cassette is carried into the load chamber 102 of the apparatus shown in FIG.

In the load chamber 102, the substrates are sequentially taken out of the cassette, plasma-cleaned with Ar gas, and H adsorbed on the surface of the processing substrate in the steps up to this point.
Impurity gases such as ₂ O and N ₂ were removed.

After the plasma cleaning is completed, the substrate 100 is transferred by the substrate transfer means 118 through the transfer chamber 101.
The wafer is conveyed from the load chamber 102 to the sputtering chamber 104 and placed on the stage 201 in the sputtering chamber 104. In the sputtering chamber 104, an underlying Ti film 401 was formed.

In the sputtering chamber 104, when the substrate is placed on the stage 201, the gate valve 112 is closed, and the vacuum pump 125 evacuates the substrate to the order of 10 ^-9 Torr. This reduces the partial pressure of the impurity gas, so that the impurity concentration in the formed metal film can be reduced.

When the degree of vacuum reached 10 ^-9 Torr, an atmosphere gas was introduced from the gas introduction pipe 122 and the power supply 2 was turned on.
In step 05, a DC power was supplied to the stage 201 and the holder 203 to form a sputter film. Titanium (Ti) was used for the target 201.

The film forming conditions were as follows. Target: Titanium (Ti) Atmosphere: Argon (Ar) Pressure: 0.4 Pa Power: 3000 W DC Temperature: Room temperature

As a result, a Ti film 401 as a base film was formed to a thickness of about 500 °. Titanium is excellent in covering properties for irregularities, and thus can cover the scorched portions and blow holes to some extent.

The Ti film 401 has an effect of preventing silicide from being formed in the source region 309 by a reaction between aluminum which is a component of a wiring to be formed later and silicon which is a component of a semiconductor layer.

Therefore, a more reliable contact can be realized by first forming a good ohmic contact with the Ti film 401 and then forming a film mainly composed of aluminum to be a wiring electrode and then performing a reflow process.

Further, the thinness of the base film 401 improves the wettability of the aluminum film to be formed later on the film formation surface. As a result, even when the entrance of the contact hole having a fine diameter is closed by the aluminum film at the stage of forming the aluminum film, the aluminum film can be embedded in the contact hole by reflow. As a material of the base film 401, polysilicon or Ti is preferable.

Next, the substrate is transferred to the sputtering chamber 105 by the transfer means 118. In the sputtering chamber 105, sputtering is performed using aluminum (Al) containing 2% of copper as a target. Instead of copper, silicon (Si)
Alternatively, a material to which scandium (Sc) is added may be used.

The film 402 containing aluminum as a main component is composed of 2
000-6000mm thick. Here is 400
It was formed to a thickness of 0 °. In this state, since the undercut portion and the blow hole cannot be completely covered, there is a high possibility that the wire is disconnected in the contact hole. (FIG. 4 (B))

The conditions for film formation were as follows. Target: Aluminum (Al) (adding 2% of copper) Atmosphere: Argon (Ar) Pressure: 0.4 Pa Current: DC4A Temperature: Room temperature

Also in the sputtering chamber 105, the gas is evacuated to the order of 10 ^-9 Torr before forming a film by sputtering.

Next, in the sputtering chamber 106, a film mainly containing an element which brings substantial fluidity to the aluminum film in a reflow step is formed on the film 402 mainly containing aluminum. This film is group 12 ~ 1
One or more main elements selected from those belonging to Group V are used as main components.

In particular, germanium (Ge), tin (S
n), gallium (Ga), zinc (Zn), lead (Pb),
Indium (In), antimony (Sb) and the like are preferable. Here, a tin film is used.

The substrate is transferred to the sputtering chamber 106 by the transfer means 118. Sputtering is performed in the sputtering chamber 106, and the thickness of the tin film 403 is 20 to 100 °, here 5 °.
The film was formed to a thickness of 0 °. Also in the sputtering chamber 106,
Before forming a film by sputtering, the chamber 106 is evacuated to the order of 10 ^-9 Torr (FIG. 4B).

The conditions for film formation were as follows. Target: tin (Sn) Atmosphere: argon (Ar) Pressure: 0.4 Pa Current: DC 0.3 A Temperature: room temperature

The process between the step of forming the film 402 containing aluminum as a main component and the step of forming the tin film 403 is described below.
It is extremely important in the present invention to perform the process continuously without opening to the atmosphere. Aluminum-based film 40
If the film comes in contact with the atmosphere after the film formation, a tin film 4
This is because, even if 03 is formed, tin does not diffuse well into the aluminum film, and reflow does not occur.
The reason may be that a natural oxide film is formed or impurities are contaminated when the surface of the aluminum film comes into contact with the atmosphere, thereby inhibiting the diffusion of the tin film 403.

The same applies to a case where a film other than tin, which is mainly composed of an element imparting fluidity to aluminum, is used.

Next, a reflow process is performed. The substrate on which the tin film 403 is formed is transferred to the sputtering chamber 1 by the transfer means 118.
06 and transported to the heating chamber 108.

This reflow step needs to be performed in a temperature range of 375 to 450 ° C. in consideration of the heat resistance of the gate electrode 308 (in this embodiment, the gate electrode 308 is
7, the heat resistance is higher than usual). In the present embodiment, 450 ° C.
Heat treatment at atmospheric pressure is performed for one hour. At this time, the processing atmosphere is preferably an inert atmosphere such as in a vacuum, in nitrogen, or in argon. Here, a nitrogen (N ₂ ) atmosphere was used.

By this heat treatment, a reaction occurs at the interface between the tin film 403 and the film 402 containing aluminum as a main component, so that tin diffuses into the aluminum film and an alloy layer having a composition of aluminum, copper and tin is formed. You.

Then, the vicinity of the upper layer of the film containing aluminum as a main component has a composition containing tin. For this reason, it began to show fluidity at a temperature of 450 ° C. or less,
The reflow process proceeds.

By the reflow process, the vicinity of the upper layer of the aluminum film 402 has fluidity, and covers the scorched portion and the gap of the blowhole without breaking. Therefore, all the disconnection portions of the film 402 containing aluminum as a main component are short-circuited, and can be completely electrically connected to the source region 309 or the gate electrode 308.

It is also extremely important in the present invention that the step of forming the tin film 403 and the step of performing reflow by heating are continuously performed without opening to the atmosphere.

Further, it has been found that the state of the surface of the film on which reflow is performed is extremely important for performing good reflow.

In the case of the present embodiment, if the surface of the tin film 403 on the uppermost surface comes into contact with the atmosphere, the fluidity of the film 402 containing aluminum as a main component is reduced or becomes inhomogeneous, resulting in insufficient reflow. As a result, contact failure may occur.

After the completion of the reflow step, the substrate is transferred to the transfer means 11
8 and taken out of the heating chamber 108,
And gradually cooled to a predetermined temperature.

After that, the substrate is transferred to the sputtering chamber 107 by the transfer means 118. In the sputtering chamber 107, sputtering using titanium (Ti) as a target is performed, and a Ti film 404 is formed to a thickness of about 500 °. The conditions were the same as those for forming the Ti film 401 as the base film.

This Ti film 404 is effective for realizing good ohmic connection when making electrical connection with a wiring formed in a higher layer.

Thereafter, the substrate taken out of the sputtering chamber 107 is transferred to the unloading chamber 103 by the transfer means 118. In the unloading chamber 103, the substrate is stored in a cassette after being purged with nitrogen. Nitrogen purging has the effect of lowering the substrate temperature in addition to the effect of cleaning the substrate. By lowering the substrate temperature, formation of an oxide film on the surface of the substrate when the substrate is exposed to the atmosphere is suppressed.

After the film formation / reflow process for all the substrates is completed, the substrates are taken out of the unloading chamber 103 in a state of being housed in the cassette.

As described above, in the sputtering apparatus of the first embodiment, the film forming and reflow processes are continuously performed on a plurality of substrates. During that time, the surface of each film is outside air (atmosphere)
Without touching it, preventing oxidation and contamination of each film,
Film formation and reflow with good electrical contact could be performed.

After the above steps, as shown in FIG. 4C, the stacked films 401 to 404 are patterned to form a source electrode 416 and a gate electrode 417. Next, a second interlayer insulating film 418 is formed.

Before forming the second interlayer insulating film 418,
First, the source electrode 416 and the gate electrode 417 are covered with a silicon nitride film or a silicon oxynitride film (not shown). this is,
It corresponds to a buffer film for forming a resin material with good adhesion.

A material made of a resin is laminated thereon as the second interlayer insulating film 418. Since this resin material can be selected from those having a lower relative dielectric constant than silicon oxide or silicon nitride, the effect of the capacitance formed between the transparent electrode formed later and the TFT can be reduced. .

Finally, a transparent electrode 419 made of ITO is formed to manufacture a TFT as shown in FIG. The material made of the resin used for the second interlayer insulating film 418 can achieve excellent flatness on the device, so that a uniform voltage can be applied to the transparent electrode.

[0139] The TFT manufactured in this manner shows good contact irrespective of the shape of the contact hole, so that there is no possibility of a problem such as a malfunction of the TFT due to disconnection of wiring or electrode.

[Embodiment 3] In the present embodiment, an example is shown in which the structure of the laminated film constituting the electrode of the thin film transistor is different from that in Embodiment 2 and reflow is performed.

A thin film transistor is manufactured through the same manufacturing steps as in Example 2, and a contact hole having a recessed portion in FIG. 4A is formed.

Next, using the multi-chamber type sputtering apparatus shown in FIG. 1, the film formation and the reflow process are continuously performed. FIG. 5 shows the steps of this embodiment.

In Example 3, the targets arranged in the respective sputtering chambers in the apparatus shown in FIG. 1 have the following compositions. The sputtering chamber 104 is made of titanium (Ti),
05 is germanium (Ge), sputter chamber 106 is aluminum (Al) added with 2% copper, sputter chamber 10
7 is titanium (Ti).

First, a plurality of substrates having undergone the process up to the state shown in FIG. 4A described in the second embodiment are stored in a cassette, and are carried into the load chamber 102 of the apparatus shown in FIG.

The transfer means 118 transfers the substrate 100 from the cassette to the sputtering chamber 104 via the transfer chamber 101.

In the sputtering chamber 104, titanium (T
Sputtering using i) as a target is performed, and a Ti film 501 as a base film is formed to a thickness of about 500 °. The film forming conditions were the same as in Example 2.

Next, in a later reflow step, a film mainly containing an element which brings substantial fluidity to the film mainly containing aluminum is formed. As a material for forming this film, the material shown in Embodiment 2 can be used. Here, a germanium film is used.

Next, the substrate is transferred to the sputtering chamber 105 by the transfer means 118. In the sputtering chamber 105, sputtering using germanium (Ge) as a target is performed to form a germanium film 502 of 20 to 100 °.
In this embodiment, the germanium film 502 is formed at 50 °.

The conditions for film formation were as follows. Target: Germanium (Ge) Atmosphere: Argon (Ar) Pressure: 0.4 Pa Current: DC1A Temperature: Room temperature

Next, the substrate is transferred to the sputtering chamber 106 by the transfer means 118. In the sputtering chamber 106, sputtering is performed using aluminum (Al) containing 2% of copper as a target. Instead of copper, silicon (Si)
Alternatively, a material to which scandium (Sc) is added may be used. The film forming conditions were the same as in Example 2.

The film 503 mainly composed of aluminum is
The film was formed to a thickness of 2000 to 6000 °, here 4000 °. In this state, since the undercut portion and the blow hole cannot be completely covered, there is a high possibility that the wire is disconnected in the contact hole (FIG. 5A).

The step of forming the film 502 mainly containing an element which brings substantial fluidity to aluminum and the step of forming the film 503 mainly containing aluminum are the same as those in the second embodiment. In addition, it is extremely important to perform the reflow continuously without opening to the atmosphere in order to perform good reflow.

Next, a reflow process is performed. The substrate on which the film 503 mainly containing aluminum is formed is taken out of the sputtering chamber 106 by the transfer means 118 and transferred to the heating chamber 108.

This reflow step needs to be performed in the temperature range of 375 to 450 ° C. in consideration of the heat resistance of the gate electrode 308 (in this embodiment, the gate electrode 308 is
7, the heat resistance is higher than usual). In this embodiment, 400 ° C.
Heat treatment at atmospheric pressure is performed for one hour. At this time, the processing atmosphere is preferably an inert atmosphere such as in a vacuum, in nitrogen, or in argon. Here, a nitrogen atmosphere is used.

By this heat treatment, the germanium film 50
A reaction occurs at the interface between the layer 3 and the film 502 containing aluminum as a main component, germanium diffuses into the film 502 containing aluminum as a main component, and an alloy layer having a composition of aluminum, copper, and germanium is formed.

Then, the vicinity of the lower layer of the film containing aluminum as a main component has a composition containing germanium. For this reason, fluidity is exhibited at a temperature of 400 ° C. or less, and the reflow process proceeds.

By this reflow process, the vicinity of the lower layer of the aluminum film 503 has fluidity and covers the scorched portion and the gap of the blowhole without breaking. Therefore, as shown in FIG. 5B, all the broken portions of the film 503 containing aluminum as a main component are short-circuited, so that the film 503 can be completely electrically connected to the source region 309 or the gate electrode 308.

A step of forming an aluminum film 503;
It is also extremely important that the step of performing reflow by heating is continuously performed without opening to the atmosphere.

In the case of this embodiment, if the film containing aluminum as the main component comes into contact with the atmosphere, a natural oxide film is formed on the surface and impurities are attached to the film. The fluidity of the resulting film may be reduced, or the film may become non-uniform, resulting in insufficient reflow, resulting in defective contacts.

After the completion of the reflow step, the substrate is transferred to the transfer means 11
8 and taken out of the heating chamber 108,
And gradually cooled to a predetermined temperature.

Then, the substrate is transferred to the sputtering chamber 107 by the transfer means 118. In the sputtering chamber 107, sputtering is performed using titanium (Ti) as a target, and a Ti film 504 is formed to a thickness of about 500 °. The conditions were the same as in Example 2 (FIG. 5B).

Thereafter, in the same manner as in Example 2, the film forming and reflow processes are completed. In this way, the film forming and reflow processes are continuously performed on a plurality of substrates. During that time, the surface of each film did not come into contact with the outside air at all, and the film formation / reflow with good electrical contact could be performed while preventing oxidation and contamination of each film.

After the above steps, the stacked films 501 to 504 are patterned to form a source electrode 516 and a gate electrode 517 in the same manner as in the second embodiment, and a second interlayer insulating film 518 is formed thereon. A material made of resin is laminated. Thus, a thin film transistor having a good contact as shown in FIG. 5C is completed.

[Embodiment 4] In this embodiment, another example is shown in which the structure of the laminated film constituting the electrode of the thin film transistor is different from that in Embodiment 2 and reflow is performed.

A thin film transistor is manufactured through the same manufacturing process as that of Embodiment 2, and a state is obtained in which a contact hole having a recessed portion is formed as shown in FIG.

Next, using a multi-chamber type sputtering apparatus shown in FIG. 1, film formation and reflow processes are continuously performed. FIG. 6 shows the steps of this embodiment.

In Example 4, the targets arranged in the respective sputtering chambers in the apparatus shown in FIG. 1 have the following compositions. The sputtering chamber 104 is made of titanium (Ti),
05 contains 20-40% of germanium (Ge), for example, 2
Aluminum (Al) containing 0% and 2% copper, and titanium (Ti) in the sputtering chamber 106. In this embodiment, the sputtering chamber 107 is not used.

First, the substrates having undergone the steps up to the state shown in FIG. 4A shown in the second embodiment are stored in a plurality of cassettes, and transferred to the load chamber 102 of the apparatus shown in FIG.

The transfer means 118 transfers the substrate from the cassette to the sputtering chamber 104 via the transfer chamber 101.

In the sputtering chamber 104, titanium (T
Sputtering using i) as a target was performed, and a Ti film 601 as a base film was formed to a thickness of about 500 °. The film forming conditions are the same as in the second embodiment.

The substrate is transferred to the sputtering chamber 105 by the transfer means 118. In the sputtering chamber 105, a film mainly containing aluminum containing 20 to 40%, for example, 20%, of germanium (Ge) as an element which brings substantial fluidity to a film mainly containing aluminum in a later reflow step. 602 is formed. The target was aluminum containing 20% germanium and 2% copper. The film forming conditions were the same as in Example 3.

A film 602 containing aluminum as a main component is
It is formed to a thickness of 2000-6000 °, here 4000 °. In this state, since the undercut portion and the blow hole cannot be completely covered, there is a high possibility that the wire is disconnected in the contact hole. (FIG. 6 (A))

In this case, the processing temperature in the subsequent reflow step changes depending on the content of the added germanium.
In this embodiment, since aluminum is the main component, 45
The germanium content is set to 20 to 40 atomic% so that reflow can be performed at 0 ° C. or lower, preferably 400 ° C. or lower.

The concentration of germanium added is determined by the content of germanium (30 ° C.) at which a eutectic point (424 ° C.) exists in the aluminum-germanium system phase diagram as shown in FIG.
Atomic%). In practice, it becomes fluid at temperatures below the eutectic point,
A value of 4040 at.% Would be reasonable.

As an element contained in the film 602 containing aluminum as a main component, an element which brings substantial fluidity to the aluminum film shown in Embodiment 2 can be used other than germanium (Ge).

Further, copper is added to suppress abnormal growth of aluminum such as hillocks. Instead of copper, a material added with silicon (Si) or scandium (Sc) may be used.

Next, a reflow process is performed. The substrate on which the film 602 containing aluminum as a main component is formed is taken out of the sputtering chamber 105 by the transfer means 118 and transferred to the heating chamber 108.

This reflow step needs to be performed in a temperature range of 375 to 450 ° C. in consideration of the heat resistance of the gate electrode 308 (in this embodiment, the gate electrode 308 is
7, the heat resistance is higher than usual). In this embodiment, 400 ° C.
A heat treatment for one hour is performed. At this time, the processing atmosphere is preferably an inert atmosphere such as in a vacuum, in nitrogen, or in argon.
Here, a nitrogen atmosphere is used.

By this heat treatment, a reaction occurs mainly on the upper surface of the film 602 containing aluminum as a main component.
The aluminum film 602 becomes fluid, and the reflow process proceeds.

By this reflow step, the vicinity of the upper layer of the film 602 containing aluminum as a main component has fluidity and covers the scorched portion and the gap of the blowhole without breaking. Therefore, as shown in FIG. 6B, all the broken portions of the film 602 containing aluminum as a main component are short-circuited, so that the film 602 can be completely electrically connected to the source region 309 and the gate electrode 308.

It is extremely important to continuously perform the two steps between the step of forming the film 602 containing aluminum as a main component and the step of performing reflow by heating without opening to the atmosphere.

In this embodiment, when the film 602 mainly composed of aluminum comes into contact with the atmosphere, a natural oxide film is formed on the surface and impurities adhere to the film 602. In some cases, the fluidity of the film is reduced, or the film becomes inhomogeneous, and the reflow becomes insufficient, resulting in poor contact.

After the completion of the reflow process, the substrate is transferred to the transfer means 11
8 and taken out of the heating chamber 108,
And gradually cooled to a predetermined temperature.

Then, the substrate is transferred to the sputtering chamber 106 by the transfer means 118. In the sputtering chamber 106, sputtering using titanium (Ti) as a target is performed, and a Ti film 603 is formed to a thickness of about 500 °. The conditions were the same as in Example 2 (FIG. 6B).

Thereafter, in the same manner as in Example 2, the film forming and reflow processes are completed. In this way, the film forming and reflow processes are continuously performed on a plurality of substrates. During this time, the surface of each film does not come into contact with the outside air at all, thereby preventing oxidation and contamination of the film. As a result, the film containing aluminum as a main component and the titanium films above and below the film could be formed and reflowed with good electrical contact.

After the above steps, the stacked films 601 to 603 are patterned to form a source electrode 616 and a gate electrode 617 in the same manner as in the second embodiment, and a second interlayer insulating film 618 is formed thereon. A material made of resin is laminated. In this manner, a thin film transistor having good contacts as shown in FIG. 6C is completed.

[Embodiment 5] This embodiment shows an example in which a metal element other than germanium is added to the material forming the wiring electrode in the embodiment 4. In particular, the added concentration will be described. An example of a manufacturing process of a thin film transistor (TFT) in this embodiment is the same as that of the fourth embodiment, and a description thereof will be omitted.

In this embodiment, since aluminum is a main component, the concentration of the additional element must be adjusted so that reflow can be performed at 450 ° C. or less. Therefore, as reference examples, FIGS. 7 to 13 show binary phase diagrams of alloys composed of aluminum and elements of germanium, tin, gallium, zinc, lead, indium, and antimony, respectively.

According to the respective phase diagrams, it can be seen that, when each element is added to aluminum at a concentration of about the following, it can exist in a liquid phase without any precipitate even at 450 ° C. Ge: 25 to 32 atomic% (FIG. 7) Sn: 85 atomic% or more (FIG. 8) Ga: 45 atomic% or more (FIG. 9) Zn: 65 atomic% or more (FIG. 10) Pb: 99 atomic% or more (FIG. 11) ) In: 98 atomic% or more (FIG. 12)

The addition concentrations of these various elements are values determined from the content of each element having a eutectic point in the phase diagram. Actually, since the material has fluidity at a temperature lower than the eutectic point, it can have a concentration range of about ± several tens%. In FIG. 13, the alloy of aluminum and antimony does not enter the liquid phase at 450 ° C., but is included in the target for the above-mentioned reason.

[Embodiment 6] This embodiment shows an example in which the heat treatment in the reflow step is performed by RTA (rapid thermal annealing). An example of a manufacturing process of a thin film transistor (TFT) in this embodiment is the same as that in the second embodiment, and a description thereof will be omitted.

The RTA is an annealing method for irradiating an object to be processed with strong light such as infrared light or ultraviolet light using a lamp or the like. As a feature of this, since the heating rate and the cooling rate are fast and the processing time is as short as several seconds to several tens of seconds, only the outermost thin film can be heated substantially. That is, for example, only a thin film on a glass substrate can be annealed at an extremely high temperature of about 1000 ° C.

In the apparatus shown in FIG. 1, the heating chamber 108 has a structure in which an infrared lamp is arranged in the chamber. RTA is performed on the substrate transferred into the chamber.

Since the RTA process is performed in a very short time of several seconds to several tens of seconds, the time required for the reflow process can be significantly reduced as compared with the case where heating is performed using a heater, and the productivity is extremely low. This is an effective means.

Further, when aluminum is used as the gate electrode, for example, the reflow step using heating by a heater must be performed at a low temperature of 450 ° C. or less in consideration of the heat resistance of aluminum.

However, if the RTA technique shown in this embodiment is applied, it is not necessary to consider the heat resistance of the gate electrode, so that the allowable range of the reflow temperature is expanded. That is, the type and concentration range of the element added to the wiring electrode can be selected more widely.

[0197]

According to the present invention, the reflow process of aluminum or a film containing aluminum as a main component can be performed satisfactorily and reliably. As a result, it is possible to reliably make contact with aluminum or a film containing aluminum as a main component through a contact hole with an active layer or a gate electrode thereunder. For this reason, it is possible to greatly improve the reliability of a manufactured thin film transistor, a circuit using the same, a liquid crystal display device, and the like, and to improve a manufacturing yield.

[Brief description of the drawings]

FIG. 1 is a diagram showing a multi-chamber type sputtering apparatus used in an embodiment.

FIG. 2 is a diagram showing a cross section taken along line A-A ′ of FIG. 1;

FIG. 3 is a view showing a manufacturing process of a thin film transistor of Example 2.

FIG. 4 is a view showing a manufacturing process of a thin film transistor of Example 2.

FIG. 5 is a view showing a sputtering step and a reflow step of a third embodiment.

FIG. 6 is a diagram showing a sputtering step and a reflow step of a fourth embodiment.

FIG. 7 is a binary phase diagram of an alloy composed of aluminum and germanium.

FIG. 8 is a binary phase diagram of an alloy composed of aluminum and tin.

FIG. 9 is a binary phase diagram of an alloy composed of aluminum and gallium.

FIG. 10 is a binary phase diagram of an alloy composed of aluminum and zinc.

FIG. 11 is a binary phase diagram of an alloy composed of aluminum and lead.

FIG. 12 is a binary phase diagram of an alloy including aluminum and indium.

FIG. 13 is a binary phase diagram of an alloy composed of aluminum and antimony.

FIG. 14 is a diagram showing an example of a conventional wiring connection structure of a thin film transistor.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 substrate 101 transfer chamber 102 load chamber 103 unload chamber 104 to 107 sputtering chamber 108 heating chamber 109 slow cooling chamber 110 to 117 gate valve 118 transfer means 121 to 123 gas introduction pipe 124 to 126 vacuum exhaust pump 200 substrate 201 stage 202 target 203 Holder 204 Power supply 210 Substrate 211 Substrate holder 212 Elevator 213 Heater 401 Ti film 402 Aluminum-based film 403 Tin film 404 Ti film 416 Source electrode 417 Gate electrode 501 Ti film 502 Germanium film 503 Aluminum-based film 504 Ti film 516 Source electrode 517 Gate electrode 601 Ti film 602 Film containing aluminum as a main component (Ge added) 603 Ti film 616 Source electrode 617 Gay G electrode

Continued on the front page (51) Int.Cl. ⁶ Identification number Reference number in the agency FI Technical display location C23C 16/06 C23C 16/06 H01L 21/203 H01L 21/203 S 21/68 21/68 A 21/3205 21 / 88 N 29/786 29/78 612A 21/336 612C 616K 627B

Claims (19)

[Claims] 1. At least first and second reaction chambers having airtightness and independently controllable atmosphere are provided, and the first and second reaction chambers are connected with airtightness. In the first reaction chamber, a film containing aluminum or aluminum as a main component is formed on a substrate, and in the second reaction chamber, at least a part of the film containing aluminum or aluminum as a main component. An apparatus for manufacturing a semiconductor device, characterized by imparting fluidity to a semiconductor device. 2. At least first and second reaction chambers having airtightness and independently controllable atmosphere are provided, and the first and second reaction chambers are connected with airtightness. In the first reaction chamber, aluminum containing an element imparting fluidity to aluminum or a film containing aluminum as a main component is formed on a substrate. In the second reaction chamber, aluminum or aluminum is formed. An apparatus for manufacturing a semiconductor device, which imparts fluidity to at least a part of a film which is a main component. 3. The semiconductor device manufacturing apparatus according to claim 1, further comprising a substrate transfer chamber having airtightness and independently controllable atmosphere, wherein the first and second reactions are performed. An apparatus for manufacturing a semiconductor device, wherein chambers are connected via the substrate transfer chamber. 4. At least first, second and third reaction chambers having airtightness and independently controllable atmosphere are provided, wherein the first, second and third reaction chambers are airtight. In the first reaction chamber, a film containing aluminum or aluminum as a main component is formed on a substrate, and in the second reaction chamber, the film containing aluminum or aluminum as a main component is formed. Forming a film containing an element which imparts fluidity to the film on the film to be formed, and imparting fluidity to at least a part of the film mainly containing aluminum or aluminum unium in the third reaction chamber. An apparatus for manufacturing a semiconductor device, comprising the steps of: 5. At least first, second and third reaction chambers having airtightness and independently controllable atmosphere are provided, wherein the first, second and third reaction chambers are airtight. In the first reaction chamber, a film containing aluminum or an element that imparts fluidity to a film containing aluminum as a main component is formed on a substrate, and the second reaction chamber is formed in the first reaction chamber. Forming a film containing aluminum or aluminum as a main component on the film, and imparting fluidity to at least a part of the film containing aluminum or aluminum as a main component in the third reaction chamber. For manufacturing a semiconductor device. 6. The semiconductor device manufacturing apparatus according to claim 4, further comprising a substrate transfer chamber having airtightness and capable of independently controlling an atmosphere, wherein the first, second, and An apparatus for manufacturing a semiconductor device, wherein a third reaction chamber is connected via the substrate transfer chamber. 7. An apparatus for manufacturing a semiconductor device according to claim 1, wherein each film is formed by a sputtering method. 8. The element according to claim 2, wherein the element imparting fluidity to the aluminum or the film containing aluminum as a main component is one or more elements selected from those belonging to Group 12 to Group 15. An apparatus for manufacturing a semiconductor device, characterized in that: 9. The method according to claim 2, wherein the element that imparts fluidity to the aluminum or the film containing aluminum as a main component is germanium (Ge), tin (Sn),
An apparatus for manufacturing a semiconductor device, which is one or more kinds selected from gallium (Ga), zinc (Zn), lead (Pb), indium (In), and antimony (Sb). 10. A method for manufacturing a semiconductor device using first and second reaction chambers which are airtightly and airtightly connected, and which can independently control an atmosphere. In a first reaction chamber, a film containing aluminum or aluminum as a main component is formed over a substrate. In the second reaction chamber, energy is applied to the film containing aluminum or aluminum as a main component,
A method for manufacturing a semiconductor device, characterized by imparting fluidity to at least a part of the film mainly containing aluminum or aluminum-unium. 11. A method for manufacturing a semiconductor device using first and second reaction chambers having airtightness and airtightly connected and capable of controlling atmosphere independently. In a first reaction chamber, an aluminum film containing an element that imparts fluidity to aluminum or a film containing aluminum as a main component is formed on a substrate, and in the second reaction chamber, energy is applied to the aluminum film. Providing a fluidity to at least a part of the aluminum film. 12. The method according to claim 10, wherein
The first and second reaction chambers are connected via a substrate transfer chamber having airtightness and independently controllable atmosphere, and the substrate is transferred from the first reaction chamber to the second reaction chamber. Wherein the substrate is transferred via the substrate transfer chamber when transferring the semiconductor device. 13. A method for manufacturing a semiconductor device using first, second, and third reaction chambers having airtightness, airtightly connected, and independently controllable atmosphere. Forming a film containing aluminum or an element that imparts fluidity to a film containing aluminum as a main component on a substrate in the first reaction chamber; and forming aluminum or aluminum on the film in the second reaction chamber. Forming a film containing aluminum as a main component; applying energy to the aluminum or the film containing aluminum as a main component in the third reaction chamber;
A method for manufacturing a semiconductor device, characterized by imparting fluidity to at least a part of the film mainly containing aluminum or aluminum-unium. 14. A method for manufacturing a semiconductor device using first, second, and third reaction chambers which are airtight and airtightly connected, and which can independently control an atmosphere. Forming a film containing aluminum or aluminum as a main component in the first reaction chamber; and providing fluidity to the film on the film containing aluminum or aluminum as a main component in the second reaction chamber. Forming a film containing an element to be formed, and applying energy to the film containing aluminum or aluminum as a main component in the third reaction chamber,
A method for manufacturing a semiconductor device, characterized in that at least a part thereof is provided with fluidity. 15. The method according to claim 13, wherein
The first, second, and third reaction chambers are connected via a substrate transfer chamber having airtightness and independently controllable atmosphere. From the first reaction chamber to the second reaction chamber And the second
A step of transferring the substrate from the reaction chamber to the third reaction chamber, wherein the substrate is transferred via the substrate transfer chamber. 16. The method for manufacturing a semiconductor device according to claim 10, wherein each of the films is formed by a sputtering method. 17. The element according to claim 11, wherein the element imparting fluidity to the aluminum or the film containing aluminum as a main component is one or more elements selected from those belonging to Groups 12 to 15. A method for manufacturing a semiconductor device. 18. The method according to claim 11, wherein the element that imparts fluidity to the aluminum or the film containing aluminum as a main component is germanium (Ge), tin (S
n), gallium (Ga), zinc (Zn), lead (Pb),
A method for manufacturing a semiconductor device, which is one or more kinds selected from indium (In) and antimony (Sb). 19. A film forming step of forming aluminum or a film containing aluminum as a main component electrically connected to at least a part of a semiconductor device in a contact hole formed in an interlayer insulating film; A reflow step of bringing substantial fluidity to aluminum or a film containing aluminum as a main component, wherein the film formation step and the reflow step are not exposed to the air in the process. Method for manufacturing the device.