JPH1041417A - Package for housing optical semiconductor elements - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently receive lights emitted by optical semiconductor elements, through an optical fiber. SOLUTION: The package comprises a base 1 having an optical element mounting zone 1a on the upper surface, frame 2 which is mounted on the base 1 to surround the element mounting zone 1a and has a through-hole 2a the side wall, tubular fixture 9 mounted in the through-hole 2a of the frame 2 so that an optical fiber 10 is inserted into the fixture, light transmissive member 11 fixed to one end of the fixture 9, and cap 3 mounted on the top face of the frame 2 to air-tightly seal an optical semiconductor element 4. The member 11 is an amorphous glass block covered with a metallized layer 12 having a tree-layer structure composed of a first layer 12a made of at least Ti, Ti-W or Ta nitride, second layer 12b made of at least Pt, Ni, or Ni-Cr and third layer 12c made of at least Au, Pt or Cu. The metallized layer 11 is brazed to the fixture 9 to thereby mount the member 11 on the fixture 9.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

[0002]

2. Description of the Related Art Conventionally, an optical semiconductor element housing package for housing an optical semiconductor element is generally made of a metal such as an iron-nickel-cobalt alloy or a copper-tungsten alloy, and the optical semiconductor element is mounted on the center of the upper surface. A metal base having a mounting portion to be mounted, a plurality of external lead terminals fixed around the mounting portion so as to penetrate from an upper surface to a lower surface via an insulating member, and a metal substrate surrounding the optical semiconductor element mounting portion. And a metal frame having a through hole on a side portion, attached to the through hole of the metal frame, and an optical semiconductor element inside. A cylindrical fixing member made of metal such as iron-nickel-cobalt alloy into which an optical fiber for transmitting and receiving an optical signal to and from the outside is attached, and is attached to one end of the fixing member, and the inside of the cylindrical fixing member is Translucent made of blocking sapphire Material, and a lid member joined to the upper surface of the metal frame body and hermetically sealing the optical semiconductor element. The optical semiconductor element is bonded and fixed to the optical semiconductor element mounting portion of the insulating base. Each electrode of the optical semiconductor element is electrically connected to an external lead terminal via a bonding wire, and thereafter, a lid member is joined to the upper surface of the metal frame, and the metal substrate, the metal frame, and the lid are formed. An optical semiconductor device as a product is obtained by housing the optical semiconductor element in the container in an airtight manner and inserting an optical fiber inside the cylindrical fixing member.

In such an optical semiconductor device, an optical semiconductor element is optically excited by a drive signal supplied from an external electric circuit,
The excited light is transmitted to and received from an optical fiber through a translucent member made of sapphire, and is transmitted through the optical fiber to function as an optical semiconductor device used for high-speed optical communication and the like.

The attachment of the light-transmitting member to the cylindrical fixing member is carried out by using a conventionally known Mo on the sapphire constituting the light-transmitting member.
A metallized layer made of molybdenum-manganese (Mo-Mn) is baked at a temperature of about 1500 ° C. by an Mn method,
Thereafter, the metallized layer and the cylindrical fixing member are brazed through a brazing material made of a gold-tin alloy or the like.

[0005]

However, in this conventional package for housing an optical semiconductor device, when light to be excited by the optical semiconductor device is transmitted to and received from an optical fiber through a light transmitting member, a sapphire forming the light transmitting member is required. With respect to the crystal axis of the light, the light excited by the optical semiconductor element causes birefringence in the light transmitting member, and only a part of the light is transmitted to and received from the optical fiber, so that the efficiency of transmitting and receiving light to the optical fiber is poor. And the transmission efficiency of the optical signal is deteriorated.

In order to solve the above-mentioned drawbacks, it is conceivable to change the translucent member to sapphire and form the glass from an amorphous glass having no crystal axis.

However, this amorphous glass generally has a melting point as low as about 700 ° C. or less, and a metallized layer made of molybdenum-manganese (Mo-Mn) can be formed by employing a conventionally known Mo-M method. Can not. Therefore, in this package for housing an optical semiconductor element, the attachment of the translucent member to the fixing member is not brazing using a brazing material such as a gold-tin alloy, but a part of the glass constituting the translucent member, Alternatively, the attachment must be performed by attaching glass using a low-melting bonding glass prepared separately, and the attachment of the translucent member to the fixing member by attaching the glass is reliable because the mechanical strength of the glass is weak. Poor, such as when the optical fiber is inserted and fixed to the fixing member, when an external force is applied to the fixing member or the like, the external force causes cracks or cracks in the glass for attaching the light transmitting member, and as a result, The hermetic sealing of the container containing the optical semiconductor element breaks from the attachment portion of the translucent member, causing a defect that the optical semiconductor element contained in the container cannot be operated normally and stably for a long period of time. Resulting in.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to provide an optical semiconductor device in which a light-transmitting member made of glass is firmly joined to a fixing member and housed inside a container. It is an object of the present invention to provide a package for housing an optical semiconductor element that can operate normally and stably for a long period of time and efficiently transmit and receive light excited by the optical semiconductor element to and from an optical fiber.

According to the present invention, there is provided a base having a mounting portion on which an optical semiconductor device is mounted on an upper surface, and a mounting hole surrounding the optical semiconductor device mounting portion on the base, and a through hole formed in a side portion. A frame member, a cylindrical fixing member attached to a through hole of the frame member, into which an optical fiber is inserted, a translucent member attached to one end of the fixing member, and the frame A lid member attached to the upper surface of the body and hermetically sealing the optical semiconductor element, wherein the light-transmitting member is at least one of titanium, titanium-tungsten, and tantalum nitride. A first layer of at least one of platinum, nickel, nickel-chromium, and gold,
It is made of amorphous glass to which a metallized layer having a three-layer structure of at least one of platinum and copper is adhered, and the translucent member is formed by brazing the metallized layer to a fixing member. It is characterized by being attached to a fixing member.

Further, in the present invention, the thickness of the first layer constituting the metallized layer is from 500 Å to 2000 Å.
The thickness of the second layer is 500 Å to 10000 Å, and the thickness of the third layer is 0.5 μm to 5 μm.

According to the package for housing an optical semiconductor element of the present invention, since the translucent member is formed of amorphous glass having no crystal axis, light excited by the optical semiconductor element is transmitted through the translucent member. In the case of transmitting and receiving the light to and from the optical fiber, the light excited by the optical semiconductor element does not cause birefringence in the translucent member, is efficiently transmitted to and received from the optical fiber, and the transmission efficiency of the optical signal is improved.

Further, according to the package for housing an optical semiconductor element of the present invention, the amorphous glass constituting the light-transmitting member has a first layer made of at least one of titanium, titanium-tungsten, and tantalum nitride; A metallized layer having a three-layer structure of a second layer made of at least one of nickel and nickel-chromium and a third layer made of at least one of gold, platinum and copper is applied. Since the bonding of the translucent member to the fixing member is firmly bonded to the amorphous glass, the metallized layer in which the translucent member is attached to the translucent member and the fixing member are made of a brazing material made of a gold-tin alloy or the like. Can be carried out by brazing through the inside. As a result, the reliability of the attachment of the translucent member to the fixing member is high, and the hermetic sealing of the container accommodating the optical semiconductor element is completely completed. Light housed in Normal conductive elements for a long period of time, it is possible to stably operate.

Further, according to the package for housing an optical semiconductor device of the present invention, the thickness of each of the metallized layers having the three-layer structure is 500 Å to 200 Å for the first layer.
0 Å, the second layer is 500 Å to 10000 Å, and the third layer is 0.5 μm.
When the thickness is in the range of 5 μm to 5 μm, the joining of the metallized layer to the translucent member is extremely strong, and the joining of the metallized layer and the brazing material made of a gold-tin alloy or the like is extremely strong so that the translucent member is extremely fixed to the fixing member. It is possible to firmly attach the optical semiconductor element, whereby the hermetic sealing of the container accommodating the optical semiconductor element is more complete, and the optical semiconductor element accommodated in the container can be operated normally and stably for a longer period of time. .

[0014]

Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is a base, 2 is a frame, and 3 is a lid member. The base 1, the frame 2, and the cover 3
A container for accommodating the optical semiconductor element 4 is formed therein.

The base 1 functions as a support member for supporting the optical semiconductor element 4, and has a mounting portion 1a for mounting the optical semiconductor element 4 substantially at the center of the upper surface thereof. The optical semiconductor element 4 is bonded and fixed to the portion 1a with an adhesive such as gold-silicon brazing material with the Peltier element 5 and the like interposed therebetween.

The base 1 is made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. For example, when the base 1 is made of an iron-nickel-cobalt alloy, it is rolled into an iron-nickel-cobalt alloy ingot. It is manufactured by applying a conventionally known metal working method such as a working method or a punching working method.

The base 1 has a metal having excellent corrosion resistance on its outer surface and good wettability to a brazing material, specifically, a nickel layer having a thickness of 2 to 6 μm and a nickel layer having a thickness of 0.5 to 5 μm. If the gold layers are sequentially applied by plating, it is possible to effectively prevent the base 1 from being oxidized and corroded. In addition, the Peltier element 5 and the like disposed below the optical semiconductor element 4 on the top of the base 1 can be used. It can be firmly adhered and fixed. Therefore,
The base 1 effectively prevents oxidative corrosion, and when a Peltier element 5 or the like disposed below the optical semiconductor element 4 is firmly adhered and fixed on the upper surface, a nickel layer having a thickness of 2 to 6 μm is formed on the outer surface thereof. And a gold layer having a thickness of 0.5 to 5 μm are preferably sequentially applied by a plating method.

The base 1 has a plurality of external lead terminals 6 penetrating the base 1 fixed around a mounting portion 1a on which the optical semiconductor element 4 is mounted via an insulating member 7 such as glass. I have.

The external lead terminal 6 functions to electrically connect each electrode of the optical semiconductor element 4 to an external electric circuit. One end of the external lead terminal 6 is connected to the electrode of the optical semiconductor element 4 via a bonding wire 8. The other end is connected to an external electric circuit via a brazing material such as solder.

The external lead terminal 6 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. When the external lead terminal 6 is fixed to the base 1, a hole having a diameter slightly larger than that of the external lead terminal 6 is formed in the base 1. In this case, the ring-shaped insulating member 7 made of glass and the external lead terminal 6 are inserted through the holes, and then the insulating member 7 made of glass is heated and melted.

The external lead terminal 6 has a plating metal layer having excellent corrosion resistance such as a nickel plating layer and a gold plating layer on its surface and a good wettability with a brazing material of 1.0 to 20 μm.
When the external lead terminal 6 is adhered to a thickness of μm, oxidation corrosion of the external lead terminal 6 can be effectively prevented, and the connection between the external lead terminal 6 and the bonding wire 8 can be made strong. Therefore, the external lead terminal 6 is provided with a plating metal layer having excellent corrosion resistance such as a nickel plating layer and a gold plating layer on its surface and having good wettability with a brazing material from 1.0 μm to 20 μm.
It is preferable that it is applied to a thickness of μm.

Further, on the upper surface of the base 1, a frame 2 is mounted so as to surround the mounting portion 1a on which the optical semiconductor element 4 is mounted.
Are formed, and a space for accommodating the optical semiconductor element 4 is formed inside the frame 2.

The frame 2 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, the frame 2 is formed by pressing an ingot (mass) of an iron-nickel-cobalt alloy or the like into a frame shape by pressing. And the substrate 1
Attachment is performed by brazing the upper surface of the base 1 and the lower surface of the frame 2 via a silver brazing material.

The frame 2 is provided with a through hole 2a on a side thereof, and a cylindrical fixing member 9 is attached to the through hole 2a.

The optical fiber 10 is inserted into the inner space of the cylindrical fixing member 9 so as to face the optical semiconductor element 4, and an optical signal can be transmitted and received between the optical fiber 10 and the optical semiconductor element 4. It has become.

The cylindrical fixing member 9 is made of, for example, a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and is inserted into a through hole 2a provided in a side portion of the frame body 2 so as to have an outer surface. Is attached to the frame 2 by joining the frame 2 to the frame 2 via a brazing material such as silver brazing.

A translucent member 11 is attached to one end of the tubular fixing member 9, that is, a portion located inside the frame 2, and the translucent member 11 is attached to the fixing member 9. The inner space is closed to maintain the hermetic sealing of the container and to transmit and receive the light excited by the optical semiconductor element 4 housed in the container to the optical fiber 10.

The light transmitting member 11 is made of, for example, silicon oxide,
It is formed of a lead-based amorphous glass containing lead oxide as a main component. Since the amorphous glass has no crystal axis, light excited by the optical semiconductor element 4 is transmitted to the optical fiber 10 through the light transmitting member 11. When transmitting and receiving, the light excited by the optical semiconductor element 4 does not cause birefringence in the translucent member 11, and as a result, is efficiently transmitted to and received from the optical fiber 10,
The transmission efficiency of the optical signal is improved.

Further, as shown in FIG. 2, the translucent member 11 made of the amorphous glass has a metallized layer 12 having a three-layer structure attached to the outer peripheral portion of one main surface. The translucent member 11 is attached to the fixing member 9 by brazing to the fixing member 9 via a brazing material such as a gold-tin alloy. In this case, since the attachment of the translucent member 11 to the fixing member 9 is performed by brazing with a gold-tin alloy or the like, the reliability of the attachment is high. The hermetic sealing of the container accommodating the element 4 is completed, and the optical semiconductor element 4 accommodated in the container can be operated normally and stably for a long period of time.

The metallized layer 12 attached to the translucent member 11 has a first layer 12a made of at least one of titanium, titanium-tungsten and tantalum nitride, and at least one of platinum, nickel and nickel-chromium. And a third layer 12c made of at least one of gold, platinum, and copper. The first layer 12a is a metallized layer 12 that solidifies the translucent member 11. The second layer 12b functions as an adhesive layer to be bonded to the first layer.
The layer 12a diffuses into the third layer 12c due to heat generated when the light-transmitting member 11 is brazed to the fixing member 9, and the metallized layer 1
2 has an effect of effectively preventing a decrease in bonding strength to the translucent member 11, and the third layer 12c further improves the wettability of the brazing material with respect to the metallized layer 12, and the metallized layer 1
2 has a function of firmly bonding the brazing material to the light transmitting member 11 and firmly attaching the fixing member 9 to the metallizing layer 12 having good wettability with respect to the brazing material.
1 is firmly adhered. In this case, since the metallized layer 12 is firmly joined to the translucent member 11, when the metallized layer 12 is brazed to the fixing member 9 via a brazing material made of a gold-tin alloy or the like, the translucent member 11 is fixed to the fixing member 9. 9 can be bonded very firmly.

The titanium, titanium-tungsten,
First layer 12a made of at least one kind of tantalum nitride
And at least one of platinum, nickel and nickel-chromium
The metallized layer 12 having a three-layer structure of a second layer 12b made of a seed and a third layer 12c made of at least one of gold, platinum and copper is made of a metal material and a nitride of the light-transmitting member 11. It is formed by sequentially applying a predetermined thickness to the outer periphery of one main surface by a sputtering method, a vapor deposition method, an ion plating method, a plating layer, or the like.

The metallized layer 1 having the three-layer structure
2, when the thickness of the first layer 12a is less than 500 angstroms, the bonding strength of the metallized layer 12 to the translucent member 11 tends to be weak, and when the thickness exceeds 2000 angstroms, the first layer 12a When the first layer 12a is applied, a large stress is present in the first layer 12a, and the first layer 12a tends to be easily separated from the light transmitting member 11 due to the intrinsic stress.

Therefore, the first layer 1 of the metallized layer 12
2a has a thickness of 500 Å to 2000
It is preferable to set it in the range of Angstroms.

Further, the metallized layer 1 having the above three-layer structure
If the second layer 12b has a thickness of less than 500 angstroms, it effectively prevents the first layer 12a from diffusing into the third layer 12c due to heat generated when the translucent member 11 is brazed to the fixing member 9. This cannot be prevented, and there is a risk that the bonding strength of the metallized layer 12 to the translucent member 11 may be reduced. If it exceeds 10,000 angstroms, the second layer 12b may be deposited on the first layer 12a. In addition, a large stress is inherent in the second layer 12b, and the intrinsic stress tends to cause the second layer 12b to be more easily separated from the first layer 12a. Therefore, it is preferable that the thickness of the second layer 12b of the metallization layer 12 be in the range of 500 Å to 10000 Å.

Further, when the thickness of the third layer 12c of the metallized layer 12 having the three-layer structure is less than 0.5 μm, the wettability of the brazing material to the metallized layer 12 is not significantly improved, and There is a tendency that it is difficult to firmly braze and attach 11 to the fixing member 9, and if it exceeds 5 μm, when the third layer 12 c is applied on the second layer 12 b, a large amount is formed in the third layer 12 c. There is a stress, and the third layer 12c tends to peel off from the second layer 12b due to the stress. Accordingly, the third layer 12 of the metallized layer 12
It is preferable that c has a thickness in the range of 0.5 μm to 5 μm.

On the other hand, a lid member 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame body 2, whereby the base 1, the frame body 2 and the lid member are joined. The optical semiconductor element 4 is hermetically sealed in the container formed of the optical semiconductor element 3.

The lid member 3 is joined to the upper surface of the frame 2 by, for example, welding such as a seam welding method.

Thus, according to the package for housing an optical semiconductor element of the present invention, the optical semiconductor element 4 is mounted and fixed on the optical semiconductor element mounting portion 1a of the base 1 with the Peltier element 5 and the like interposed therebetween. 4 are electrically connected to the external lead terminals 6 via bonding wires 8, and then the lid member 3 is joined to the upper surface of the frame 2, and the base 1 and the frame 2
The optical semiconductor device 4 is accommodated in a container formed by the lid member 3 and the optical semiconductor device 4. Finally, the optical fiber 10 is inserted through the fixing member 9 of the frame 2 to form an optical semiconductor device as a final product, which is supplied from an external electric circuit. Light is excited in the optical semiconductor element 4 by a driving signal generated by the optical fiber 10, and the excited light is transmitted through the optically transparent member 11 made of amorphous glass.
The optical fiber 10 is used for high-speed optical communication and the like by transmitting and receiving the signal through the optical fiber 10.

It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. Although fixed to the base 1, it may be fixed to the frame 2.

[0040]

According to the package for housing an optical semiconductor element of the present invention, since the light-transmitting member is formed of amorphous glass having no crystal axis, light excited by the optical semiconductor element is transmitted. In the case of transmitting and receiving the light to and from the optical fiber through the member, the light excited by the optical semiconductor element does not cause birefringence in the translucent member, is efficiently transmitted to and received from the optical fiber, and the transmission efficiency of the optical signal is improved.

Further, according to the package for housing an optical semiconductor element of the present invention, the first layer made of at least one of titanium, titanium-tungsten, and tantalum nitride is formed on the amorphous glass constituting the light-transmitting member; A metallized layer having a three-layer structure of a second layer made of at least one of nickel and nickel-chromium and a third layer made of at least one of gold, platinum and copper is applied. Since the bonding of the translucent member to the fixing member is firmly bonded to the amorphous glass, the metallized layer in which the translucent member is attached to the translucent member and the fixing member are made of a brazing material made of a gold-tin alloy or the like. Can be carried out by brazing through the inside. As a result, the reliability of the attachment of the translucent member to the fixing member is high, and the hermetic sealing of the container accommodating the optical semiconductor element is completely completed. Light housed in Normal conductive elements for a long period of time, it is possible to stably operate.

Further, according to the package for housing an optical semiconductor device of the present invention, the thickness of each of the metallized layers having the three-layer structure is set to 500 Å to 200 Å for the first layer.
0 Å, the second layer is 500 Å to 10000 Å, and the third layer is 0.5 μm.
When the thickness is in the range of 5 μm to 5 μm, the joining of the metallized layer to the translucent member is extremely strong, and the joining of the metallized layer and the brazing material made of a gold-tin alloy or the like is extremely strong so that the translucent member is extremely fixed to the fixing member. It is possible to firmly attach the optical semiconductor element, whereby the hermetic sealing of the container accommodating the optical semiconductor element is more complete, and the optical semiconductor element accommodated in the container can be operated normally and stably for a longer period of time. .

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of a package for housing an optical semiconductor element of the present invention.

FIG. 2 is an enlarged sectional view of a main part of the package for housing an optical semiconductor element shown in FIG. 1;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Optical semiconductor element mounting part 2 ... Frame 2a ... Through hole 3 ... Lid member 4 ... Optical semiconductor element 9 ... Fixing member 10 ... Optical fiber 11 ··· Translucent member 12 ··· Metallized layer 12a ··· First layer 12b ··· Second layer 12c ··· Third layer

Claims (2)

[Claims] 1. A frame having a mounting portion on which an optical semiconductor element is mounted on an upper surface, and a frame mounted on the base so as to surround the optical semiconductor device mounting portion and having a through hole on a side portion. Body, a cylindrical fixing member attached to a through hole of the frame, and an optical fiber inserted therein, a translucent member attached to one end of the fixing member, An optical semiconductor element storage package comprising: a lid member attached to an upper surface and hermetically sealing the optical semiconductor element, wherein the light-transmitting member is made of at least one of titanium, titanium-tungsten, and tantalum nitride. A metallized layer having a three-layer structure of a first layer, a second layer made of at least one of platinum, nickel and nickel-chromium, and a third layer made of at least one of gold, platinum and copper is applied. Metallized layer made of amorphous glass An optical semiconductor device package for housing, wherein a light-transmitting member is attached to the fixed member by brazing to. 2. The metallized layer has a first layer having a thickness of 500 to 2,000 angstroms, and a second layer having a thickness of 500 to 100 angstroms.
2. The package for accommodating an optical semiconductor device according to claim 1, wherein the thickness of the third layer is 00 angstrom and the thickness of the third layer is 0.5 μm to 5 μm.