JP3285768B2 - Package for storing optical semiconductor elements - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

[0002]

2. Description of the Related Art Conventionally, an optical semiconductor element housing package for housing an optical semiconductor element is generally made of a metal such as an iron-nickel-cobalt alloy or a copper-tungsten alloy, and the optical semiconductor element is mounted on the center of the upper surface. A metal base having a mounting portion to be mounted, a plurality of external lead terminals fixed around the mounting portion so as to penetrate from an upper surface to a lower surface via an insulating member, and a metal substrate surrounding the optical semiconductor element mounting portion. And a metal frame having a through hole on a side portion, attached to the through hole of the metal frame, and an optical semiconductor element inside. A cylindrical fixing member made of metal such as iron-nickel-cobalt alloy into which an optical fiber for transmitting and receiving an optical signal to and from the outside is attached, and is attached to one end of the fixing member, and the inside of the cylindrical fixing member is Translucent made of blocking sapphire Material, and a lid member joined to the upper surface of the metal frame body and hermetically sealing the optical semiconductor element. The optical semiconductor element is bonded and fixed to the optical semiconductor element mounting portion of the insulating base. Each electrode of the optical semiconductor element is electrically connected to an external lead terminal via a bonding wire, and thereafter, a lid member is joined to the upper surface of the metal frame, and the metal substrate, the metal frame, and the lid are formed. An optical semiconductor device as a product is obtained by housing the optical semiconductor element in the container in an airtight manner and inserting an optical fiber inside the cylindrical fixing member.

In such an optical semiconductor device, an optical semiconductor element is optically excited by a drive signal supplied from an external electric circuit,
The excited light is transmitted to and received from an optical fiber through a translucent member made of sapphire, and is transmitted through the optical fiber to function as an optical semiconductor device used for high-speed optical communication and the like.

The attachment of the light-transmitting member to the cylindrical fixing member is carried out by using a conventionally known Mo on the sapphire constituting the light-transmitting member.
A metallized layer made of molybdenum-manganese (Mo-Mn) is baked at a temperature of about 1500 ° C. by an Mn method,
Thereafter, the metallized layer and the cylindrical fixing member are brazed through a brazing material made of a gold-tin alloy or the like.

[0005]

However, in this conventional package for housing an optical semiconductor device, when light to be excited by the optical semiconductor device is transmitted to and received from an optical fiber through a light transmitting member, a sapphire forming the light transmitting member is required. With respect to the crystal axis of the light, the light excited by the optical semiconductor element causes birefringence in the light transmitting member, and only a part of the light is transmitted to and received from the optical fiber, so that the efficiency of transmitting and receiving light to the optical fiber is poor. And the transmission efficiency of the optical signal is deteriorated.

In order to solve the above-mentioned drawbacks, it is conceivable to change the translucent member to sapphire and form the glass from an amorphous glass having no crystal axis.

However, when the light-transmitting member is formed of amorphous glass, the amorphous glass generally contains a large amount of bubbles therein, so that light excited by the optical semiconductor element can be transmitted. When light is transmitted to and received from the optical fiber through the transparent member, the light excited by the optical semiconductor element undergoes irregular reflection by bubbles in the light transmitting member when passing through the light transmitting member, and the amount of light transmitted to and received from the optical fiber decreases. The disadvantage was that the signal transmission efficiency deteriorated.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to improve the efficiency of transmitting and receiving light excited by an optical semiconductor device to and from an optical fiber and increasing the transmission efficiency of an optical signal. An object of the present invention is to provide a package for housing an optical semiconductor element.

According to the present invention, there is provided a base having a mounting portion on which an optical semiconductor device is mounted on an upper surface, and a mounting hole surrounding the optical semiconductor device mounting portion on the base, and a through hole formed in a side portion. A frame member, a cylindrical fixing member attached to a through hole of the frame member, into which an optical fiber is inserted, a translucent member attached to one end of the fixing member, and the frame An optical semiconductor element housing package comprising: a lid member attached to an upper surface of a body and hermetically sealing the optical semiconductor element, wherein the light-transmitting member is made of amorphous glass, and is contained therein. The present invention is characterized in that the area of the foam projected when the foam is irradiated with light to 100 cm ³ of the translucent member is 0.03 mm ² or less.

According to the package for housing an optical semiconductor element of the present invention, since the translucent member is formed of amorphous glass having no crystal axis, the light excited by the optical semiconductor element is transmitted to the optical fiber through the translucent member. In the case of transmission, the light excited by the optical semiconductor element is transmitted and received to the optical fiber as it is without causing birefringence in the translucent member, thereby increasing the transmission efficiency of the optical signal.

According to the package for housing an optical semiconductor element of the present invention, the amount of bubbles in the amorphous glass forming the light-transmitting member is projected when light is applied to 100 cm ³ of the light-transmitting member. The area of the bubbles is 0.03 mm ² or less, and the amount of bubbles contained in the light-transmitting member is made small. When the light is transmitted to and received from the optical fiber, the light excited by the optical semiconductor element hardly causes irregular reflection in the translucent member and is transmitted and received as it is to the optical fiber. As a result, the transmission efficiency of the optical signal becomes extremely high.

[0012]

Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 show an embodiment of a package for accommodating a semiconductor element according to the present invention, wherein 1 is a base, 2 is a frame, and 3 is a lid member. The base 1, the frame 2, and the cover 3
A container for accommodating the optical semiconductor element 4 is formed therein.

The base 1 functions as a support member for supporting the optical semiconductor element 4, and has a mounting section 1a for mounting the optical semiconductor element 4 at a substantially central portion of the upper surface thereof. The optical semiconductor element 4 is bonded and fixed to the portion 1a with an adhesive such as gold-silicon brazing material with the Peltier element 5 and the like interposed therebetween.

The base 1 is made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. For example, when the base 1 is made of an iron-nickel-cobalt alloy, it is rolled into an iron-nickel-cobalt alloy ingot. It is manufactured by applying a conventionally known metal working method such as a working method or a punching working method.

The substrate 1 has a metal having excellent corrosion resistance on the outer surface and good wettability to a brazing material, specifically, a nickel layer having a thickness of 2 to 6 μm and a nickel layer having a thickness of 0.5 to 5 μm. If the gold layers are sequentially applied by plating, it is possible to effectively prevent the base 1 from being oxidized and corroded. In addition, the Peltier element 5 and the like disposed below the optical semiconductor element 4 on the top of the base 1 can be used. It can be firmly adhered and fixed. Therefore,
The base 1 effectively prevents oxidative corrosion, and when a Peltier element 5 or the like disposed below the optical semiconductor element 4 is firmly adhered and fixed on the upper surface, a nickel layer having a thickness of 2 to 6 μm is formed on the outer surface thereof. And a gold layer having a thickness of 0.5 to 5 μm are preferably sequentially applied by a plating method.

The base 1 has a plurality of external lead terminals 6 penetrating the base 1 fixed around a mounting portion 1a on which the optical semiconductor element 4 is mounted via an insulating member 7 such as glass. I have.

The external lead terminal 6 functions to electrically connect each electrode of the optical semiconductor element 4 to an external electric circuit. One end of the external lead terminal 6 is connected to the electrode of the optical semiconductor element 4 via a bonding wire 8. The other end is connected to an external electric circuit via a brazing material such as solder.

The external lead terminal 6 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. When the external lead terminal 6 is fixed to the base 1, a hole having a diameter slightly larger than that of the external lead terminal 6 is formed in the base 1. In this case, the ring-shaped insulating member 7 made of glass and the external lead terminal 6 are inserted through the holes, and then the insulating member 7 made of glass is heated and melted.

The external lead terminal 6 is provided with a plating metal layer having excellent corrosion resistance such as a nickel plating layer and a gold plating layer on its surface and having good wettability with a brazing material from 1.0 μm to 20 μm.
When the external lead terminal 6 is adhered to a thickness of μm, oxidation corrosion of the external lead terminal 6 can be effectively prevented, and the connection between the external lead terminal 6 and the bonding wire 8 can be made strong. Therefore, the external lead terminal 6 is provided with a plating metal layer having excellent corrosion resistance such as a nickel plating layer and a gold plating layer on its surface and having good wettability with a brazing material from 1.0 μm to 20 μm.
It is preferable that it is applied to a thickness of μm.

Further, on the upper surface of the base 1, a frame 2 is mounted so as to surround the mounting portion 1a on which the optical semiconductor element 4 is mounted.
Are formed, and a space for accommodating the optical semiconductor element 4 is formed inside the frame 2.

The frame 2 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, the frame 2 is formed by pressing an ingot (mass) of an iron-nickel-cobalt alloy or the like into a frame shape by pressing. And the substrate 1
Attachment is performed by brazing the upper surface of the base 1 and the lower surface of the frame 2 via a silver brazing material.

The frame 2 is provided with a through hole 2a on the side thereof, and a cylindrical fixing member 9 is attached to the through hole 2a.

The cylindrical fixing member 9 is inserted into an inner space so that an optical fiber 10 is opposed to the optical semiconductor element 4 so that an optical signal can be transmitted and received between the optical fiber 10 and the optical semiconductor element 4. It has become.

The cylindrical fixing member 9 is made of, for example, a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and is inserted into a through-hole 2a provided in a side portion of the frame 2 so as to have an outer surface. Is attached to the frame 2 by joining the frame 2 to the frame 2 via a brazing material such as silver brazing.

A translucent member 11 is attached to one end of the tubular fixing member 9, that is, a portion located inside the frame 2, and the translucent member 11 is attached to the fixing member 9. The inner space is closed to maintain the hermetic sealing of the container and to transmit and receive the light excited by the optical semiconductor element 4 accommodated in the container to the optical fiber 10.

The light transmitting member 11 is made of, for example, silicon oxide,
It is formed of a lead-based amorphous glass containing lead oxide as a main component. Since the amorphous glass has no crystal axis, it allows light excited by the optical semiconductor element 4 to pass through the translucent member 11. When transmitting and receiving to and from the optical fiber 10, the optical semiconductor element 4
Is excited by the optical fiber 10 without causing birefringence in the translucent member 11, and as a result, transmission and reception of the light excited by the optical semiconductor element 4 to the optical fiber 10 becomes highly efficient. Thus, the transmission efficiency of the optical signal can be increased.

Further, the light-transmitting member 11 made of the amorphous glass has a bubble contained therein.
The area of the bubble projected when light is irradiated to the cm ³ is 0.03 mm ² or less, and the light excited by the optical semiconductor element 4 is transmitted through the light-transmitting member 11 because the bubble content is small.
When the light is transmitted to and received from the optical fiber 10, the light excited by the optical semiconductor element 4 is transmitted and received as it is to the optical fiber 10 with almost no irregular reflection due to bubbles in the translucent member 11. The efficiency can be made extremely high.

Translucent member 11 made of the above amorphous glass
Means that the amount of bubbles contained therein is
If the area of the bubble projected when light is irradiated on the cm ³ exceeds 0.03 mm ² , the light excited by the optical semiconductor element 4 causes irregular reflection by the bubble in the light transmitting member 11, and the efficiency of the optical fiber 10 is increased. Transmission cannot be performed well, and the transmission efficiency of the optical signal deteriorates. Therefore, the transparent member 11 made of the amorphous glass has an amount of bubbles contained in the transparent member 100 of 0.03 mm when the light is irradiated on 100 cm ^{3 of the} transparent member. ² Specified below.

Further, in order to reduce the amount of bubbles contained in the transparent member 11 made of the amorphous glass, silicon oxide, lead oxide, etc. are heated and melted so that the light transmitting property of the amorphous glass is reduced. When the member 11 is obtained, the heating and melting speed is reduced, and the stirring is performed at a low speed to minimize the entrapped air inside and to discharge the entrapped air to the outside.

Further, the attachment of the translucent member 11 to the fixing member 9 is performed by forming the metallized layer 1 on the outer periphery of one main surface of the translucent member 11.
2 and the metallized layer 12 and the fixing member 9
And brazing through a brazing material such as a gold-tin alloy. In this case, the fixing member 9 of the translucent member 11
The attachment is performed by brazing with a gold-tin alloy or the like, so that the attachment is highly reliable, whereby the container for housing the optical semiconductor element 4 at the location of the fixing member 9 is completely hermetically sealed. Thus, the optical semiconductor element 4 housed in the container can be operated normally and stably for a long period of time. The metallized layer 12 has a low melting point of about 700 ° C. of the amorphous glass constituting the translucent member 11 and cannot be formed by baking molybdenum-manganese by a conventionally known Mo—Mn method. A first layer 12a made of at least one of titanium, titanium-tungsten, and tantalum nitride, which is active with respect to the amorphous glass and is strongly bonded; and the first layer 12a fixes the translucent member 11 to the fixing member 9 Is diffused into a third layer 12c, which will be described later, by heat when brazing to
A second layer 12b made of at least one of platinum, nickel, and nickel-chromium, which effectively prevents a decrease in bonding strength to the translucent member 11, and improves the wettability of the brazing material to the metallized layer 12. A third layer 12c made of at least one of gold, platinum, and copper, in which a brazing material is firmly bonded to the metallized layer 12 to firmly attach the translucent member 11 to the fixing member 9; Particularly, the metallized layer 12 formed by sequentially laminating titanium-platinum-gold has a high bonding strength with the light-transmitting member 11 and a good wettability with the brazing material, so that the light-transmitting member 11 is fixed. Since it can be brazed to the member 9, it is very suitable as the metallized layer 12.

The titanium, titanium-tungsten,
First layer 12a made of at least one kind of tantalum nitride
And at least one of platinum, nickel and nickel-chromium
The metallized layer 12 having a three-layer structure of a second layer 12b made of a seed and a third layer 12c made of at least one of gold, platinum and copper is made of a metal material and a nitride of the light-transmitting member 11. It is formed by sequentially applying a predetermined thickness to the outer periphery of one main surface by a sputtering method, a vapor deposition method, an ion plating method, a plating layer, or the like.

Further, the metallized layer 12 is composed of a first layer 12a made of at least one of titanium, titanium-tungsten and tantalum nitride, a second layer 12b made of at least one of platinum, nickel and nickel-chromium; When the third layer 12c made of at least one of platinum and copper is used, if the thickness of the first layer 12a is less than 500 angstroms, the bonding strength of the metallized layer 12 to the translucent member 11 tends to be weak. When the thickness exceeds 2000 angstroms, the first layer 12a
Is applied to the first layer 12a, a large stress is inherent in the first layer 12a.
It is preferable that the thickness of the first layer 12a be in the range of 500 Å to 2000 Å because the film tends to be more easily peeled off.
Is less than 500 angstroms, the heat generated when the light transmitting member 11 is brazed to the fixing member 9 becomes the first thickness.
Diffusion of the layer 12a into the third layer 12c cannot be effectively prevented, and there is a risk that the bonding strength of the metallized layer 12 to the translucent member 11 may be reduced.
When the thickness exceeds 00 Å, the second layer is formed on the first layer 12a.
When depositing the layer 12b, a large stress is inherent in the second layer 12b, and the second layer 12b
The second layer 12 has a tendency to peel off more easily than the second layer 12a.
The thickness of b is preferably in the range of 500 Å to 10000 Å, and if the thickness of the third layer 12 c is less than 0.5 μm, the metallized layer 1
2, the wettability of the brazing material is not significantly improved, and it tends to be difficult to firmly braze and attach the translucent member 11 to the fixing member 9.
When a third layer 12c is deposited on the third layer 12b, a large stress is present in the third layer 12c, and the third layer 12c
Is more likely to be peeled off than the second layer 12b, the thickness of the third layer 12c is preferably set in the range of 0.5 μm to 5 μm.

On the other hand, a lid member 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame body 2, whereby the base 1, the frame body 2 and the lid member are joined. The optical semiconductor element 4 is hermetically sealed in the container formed of the optical semiconductor element 3.

The lid member 3 is joined to the upper surface of the frame 2 by, for example, welding such as seam welding.

Thus, according to the package for housing an optical semiconductor element of the present invention, the optical semiconductor element 4 is mounted and fixed on the optical semiconductor element mounting portion 1a of the base 1 with the Peltier element 5 or the like interposed therebetween. 4 are electrically connected to the external lead terminals 6 via bonding wires 8, and then the lid member 3 is joined to the upper surface of the frame 2, and the base 1 and the frame 2
The optical semiconductor device 4 is accommodated in a container formed by the lid member 3 and the optical semiconductor device 4. Finally, the optical fiber 10 is inserted through the fixing member 9 of the frame 2 to form an optical semiconductor device as a final product, which is supplied from an external electric circuit. Light is excited in the optical semiconductor element 4 by a driving signal generated by the optical fiber 10, and the excited light is transmitted through the optically transparent member 11 made of amorphous glass.
The optical fiber 10 is used for high-speed optical communication and the like by transmitting and receiving the signal through the optical fiber 10.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. Although fixed to the base 1, it may be fixed to the frame 2. Further, an anti-reflection coating layer may be applied to the surface of the light transmitting member 11. In this case, the optical semiconductor element 4
The excited light does not reflect on the surface of the light transmitting member 11 and passes through the light transmitting member 11 as it is, so that the light excited by the optical semiconductor element 4 can be efficiently transmitted and received by the optical fiber 10. It becomes possible.

[0037]

According to the package for housing an optical semiconductor element of the present invention, since the light-transmitting member is formed of amorphous glass having no crystal axis, light excited by the optical semiconductor element passes through the light-transmitting member. When the light is transmitted to the optical fiber, the light excited by the optical semiconductor element is directly transmitted to and received from the optical fiber without causing birefringence in the translucent member, thereby increasing the transmission efficiency of the optical signal.

According to the package for housing an optical semiconductor element of the present invention, the amount of bubbles in the amorphous glass forming the light transmitting member is projected when the light is irradiated on 100 cm ³ of the light transmitting member. The area of the bubbles is 0.03 mm ² or less, and the amount of bubbles contained in the light-transmitting member is made small. When the light is transmitted to and received from the optical fiber, the light excited by the optical semiconductor element hardly causes irregular reflection in the translucent member and is transmitted and received as it is to the optical fiber. As a result, the transmission efficiency of the optical signal becomes extremely high.

[Brief description of the drawings]

FIG. 1 is a sectional view showing an embodiment of a package for housing an optical semiconductor element of the present invention.

FIG. 2 is an enlarged sectional view of a main part of the package for housing an optical semiconductor element shown in FIG. 1;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Base 1a ... Optical semiconductor element mounting part 2 ... Frame 2a ... Through hole 3 ... Lid member 4 ... Optical semiconductor element 9 ... Fixing member 10 ... Optical fiber 11 ... Translucent member 12 ... Metalized layer

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 23/00-23/30 H01L 21/56 H01L 31/0232 H01L 33/00

Claims (1)

(57) [Claims] 1. A frame having a mounting portion on which an optical semiconductor element is mounted on an upper surface, and a frame mounted on the base so as to surround the optical semiconductor device mounting portion and having a through hole on a side portion. Body, a cylindrical fixing member attached to a through hole of the frame, and an optical fiber inserted therein, a translucent member attached to one end of the fixing member, A package attached to the upper surface and comprising a lid member for hermetically sealing the optical semiconductor element, wherein the light-transmitting member is made of amorphous glass and contained inside. A package for housing an optical semiconductor element, wherein an area of a bubble projected when the bubble irradiates light to 100 cm ³ of the translucent member is 0.03 mm ² or less.