JPH10325767A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPH10325767A
JPH10325767A JP13465297A JP13465297A JPH10325767A JP H10325767 A JPH10325767 A JP H10325767A JP 13465297 A JP13465297 A JP 13465297A JP 13465297 A JP13465297 A JP 13465297A JP H10325767 A JPH10325767 A JP H10325767A
Authority
JP
Japan
Prior art keywords
pressure sensor
package
pedestal
spring
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13465297A
Other languages
Japanese (ja)
Other versions
JP3307274B2 (en
Inventor
Hiroshi Saito
宏 齊藤
Tomohiro Inoue
智広 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP13465297A priority Critical patent/JP3307274B2/en
Publication of JPH10325767A publication Critical patent/JPH10325767A/en
Application granted granted Critical
Publication of JP3307274B2 publication Critical patent/JP3307274B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor by which a pressure can be measured with good accuracy even when an external force or the like is applied to a package. SOLUTION: A sensor is constituted so as to be provided with a pressure sensor chip 1 in which a strain gage resistance 3 whose resistance value is changed according to a pressure change is formed on a thin diaphragm 2, with a pedestal 6 which comprises a through hole 7 communicating with the diaphragm 2 and which supports the pressure sensor chip 1, with a package 8 which comprises an introduction hole 9 used to introduce a pressure, to be measured, into the through hole 7, to which the pedestal 6 is fixed and which houses the pressure sensor chip 1 and with external terminals 5 which are connected electrically to the strain gage resistance 3 and which are derived to the outside of the package 8. In this case, a thin sheetlike springy plate 10 one end of which is fixed to the package 8 is added, the pedestal 8 is installed on the springy plate 10, and the pedestal 6 is suppressed by the elastic force of the springy plate 10.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ダイヤフラムを用
いて圧力検出を行う半導体圧力センサに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor for detecting pressure using a diaphragm.

【0002】[0002]

【従来の技術】図5は、従来の半導体圧力センサの概略
構成図である。1は圧力センサチップであり、薄肉のダ
イヤフラム2上に圧力変化に応じてその抵抗値が変化す
る歪みゲージ抵抗3が形成されている。歪みゲージ抵抗
3は、ワイヤ4により外部端子5と接続されている。
2. Description of the Related Art FIG. 5 is a schematic structural view of a conventional semiconductor pressure sensor. Reference numeral 1 denotes a pressure sensor chip, and a strain gauge resistor 3 whose resistance value changes in accordance with a change in pressure is formed on a thin diaphragm 2. The strain gauge resistor 3 is connected to an external terminal 5 by a wire 4.

【0003】6はガラス等で形成される台座であり、圧
力センサチップ1と陽極接合等により接合され、圧力セ
ンサチップ1を支持している。台座6にはダイヤフラム
2に通じる貫通孔7が設けられている。
A pedestal 6 made of glass or the like is joined to the pressure sensor chip 1 by anodic bonding or the like, and supports the pressure sensor chip 1. The pedestal 6 is provided with a through-hole 7 communicating with the diaphragm 2.

【0004】8はパッケージであり、圧力センサチップ
1及び台座6を収納する。パッケージ8は台座6の貫通
孔7に被測定圧力を導入するための導入孔9を有してい
る。
A package 8 houses the pressure sensor chip 1 and the pedestal 6. The package 8 has an introduction hole 9 for introducing a measured pressure into the through hole 7 of the pedestal 6.

【0005】以上の構成の半導体圧力センサでは、被圧
力抵抗がパッケージ8の導入孔9から台座6の貫通孔7
介してダイヤフラム2に印加されると、ダイヤフラム2
が被測定圧力に応じて歪み、その歪みを歪みゲージ抵抗
3により電気的に検出することで被測定圧力を測定す
る。
In the semiconductor pressure sensor having the above-described structure, the pressure-receiving resistance is changed from the introduction hole 9 of the package 8 to the through hole 7 of the base 6.
Applied to the diaphragm 2 via the
Is measured in accordance with the measured pressure, and the strain is electrically detected by the strain gauge resistor 3 to measure the measured pressure.

【0006】[0006]

【発明が解決しようとする課題】ところが、上述のよう
な構成の半導体圧力センサでは、パッケージ8に外力等
が印加されるとダイヤフラム2にこの外力による歪みが
発生し、正確な圧力測定が行えなえないという問題があ
った。
However, in the semiconductor pressure sensor having the above-described structure, when an external force or the like is applied to the package 8, the diaphragm 2 is distorted by the external force, so that accurate pressure measurement cannot be performed. There was a problem that can not be.

【0007】本発明は、上記の点に鑑みて成されたもの
であり、その目的とするところは、外力等がパッケージ
に印加されたとしても精度よく圧力測定が可能な半導体
圧力センサを提供することにある。
The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor pressure sensor capable of accurately measuring pressure even when an external force or the like is applied to a package. It is in.

【0008】[0008]

【課題を解決するための手段】請求項1記載の発明は、
圧力変化に応じてその抵抗値が変化する歪みゲージ抵抗
を薄肉のダイヤフラム上に形成して成る圧力センサチッ
プと、前記ダイヤフラムに通じる貫通孔を有し前記圧力
センサチップを支持する台座と、前記貫通孔に被測定圧
力を導入するための導入孔を有するとともに前記台座が
固定され前記圧力センサチップを収納するパッケージ
と、前記歪みゲージ抵抗と電気的に接続され前記パッケ
ージの外部に引き出される外部端子とを有して成る半導
体圧力センサにおいて、一端を前記パッケージに固定し
た薄板状のばね状板を付加し、前記ばね状板上に前記台
座を設け、前記ばね状板の弾性力により前記台座を支持
するようにしたものである。
According to the first aspect of the present invention,
A pressure sensor chip formed on a thin diaphragm having a strain gauge resistance whose resistance value changes in accordance with a pressure change, a pedestal having a through hole communicating with the diaphragm and supporting the pressure sensor chip; A package having an introduction hole for introducing a pressure to be measured into the hole and accommodating the pressure sensor chip, wherein the pedestal is fixed, and an external terminal which is electrically connected to the strain gauge resistor and drawn out of the package. In the semiconductor pressure sensor having a thin plate-like spring-like plate having one end fixed to the package, the pedestal is provided on the spring-like plate, and the pedestal is supported by the elastic force of the spring-like plate. It is something to do.

【0009】請求項2記載の発明は、請求項1記載の半
導体圧力センサにおいて、前記ばね状板をパッケージを
加工することにより形成するようにしたものである。
According to a second aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the spring-like plate is formed by processing a package.

【0010】請求項3記載の発明は、請求項1記載の半
導体圧力センサにおいて、前記ばね状板を前記外部端子
と同じ素材により形成するようにしたものである。
According to a third aspect of the present invention, in the semiconductor pressure sensor according to the first aspect, the spring-like plate is formed of the same material as the external terminals.

【0011】[0011]

【発明の実施の形態】以下、本発明の一実施形態につい
て図面に基づき説明する。図1は、本発明の一実施形態
に係る半導体圧力センサの概略構成図である。1は圧力
センサチップであり、薄肉のダイヤフラム2上に圧力変
化に応じてその抵抗値が変化する歪みゲージ抵抗3が形
成されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a semiconductor pressure sensor according to one embodiment of the present invention. Reference numeral 1 denotes a pressure sensor chip, and a strain gauge resistor 3 whose resistance value changes in accordance with a change in pressure is formed on a thin diaphragm 2.

【0012】歪みゲージ抵抗3は、ワイヤ4により外部
端子5と接続されている。外部端子5の素材は、銅やコ
バール、ステンレスばね鋼、42合金等であり、耐湿性
や酸化防止の観点から表面に金・銀等のめっきを施して
あることが望ましい。
The strain gauge resistor 3 is connected to an external terminal 5 by a wire 4. The material of the external terminal 5 is copper, Kovar, stainless spring steel, 42 alloy, or the like, and it is desirable that the surface is plated with gold, silver, or the like from the viewpoint of moisture resistance and oxidation prevention.

【0013】6はガラス等で形成される台座であり、圧
力センサチップ1と陽極接合等により接合され、圧力セ
ンサチップ1を支持している。台座6にはダイヤフラム
2に通じる貫通孔7が設けられている。
Reference numeral 6 denotes a pedestal formed of glass or the like, which is joined to the pressure sensor chip 1 by anodic bonding or the like and supports the pressure sensor chip 1. The pedestal 6 is provided with a through-hole 7 communicating with the diaphragm 2.

【0014】8はプラスチック等により形成されたパッ
ケージであり、圧力センサチップ1及び台座6を収納す
る。パッケージ8は台座6の貫通孔7に被測定圧力を導
入するための導入孔9を有している。
Reference numeral 8 denotes a package formed of plastic or the like, which houses the pressure sensor chip 1 and the pedestal 6. The package 8 has an introduction hole 9 for introducing a measured pressure into the through hole 7 of the pedestal 6.

【0015】10は薄板状のばね状板であり、一端がパ
ッケージ8に固定されている。台座6はばね状板10上
に低応力のシリコン樹脂やエポキシ樹脂等の接着剤11
で固定され、ばね状板10の弾性力により支持されてい
る。パッケージ8に外力が印加された際にばね状板が撓
むことにより台座6を介してダイヤフラム2に伝播する
外力を緩和する。なお、ばね状板10はパッケージ8に
印加された外力に対して撓む形状を有するものであれば
よく、材質について特に限定されるものではない。
Reference numeral 10 denotes a thin spring-like plate, one end of which is fixed to the package 8. The pedestal 6 is provided on the spring-like plate 10 with an adhesive 11 such as a low-stress silicone resin or epoxy resin.
And supported by the elastic force of the spring-shaped plate 10. When an external force is applied to the package 8, the spring-like plate bends, so that the external force propagating to the diaphragm 2 via the pedestal 6 is reduced. The spring-shaped plate 10 may have any shape as long as it has a shape that bends against an external force applied to the package 8, and the material is not particularly limited.

【0016】本実施形態によれば、パッケージ8に外力
が印加された際、ばね状板10が撓むことにより、圧力
センサチップ1に伝播する外力を緩和することが可能と
なる。
According to this embodiment, when an external force is applied to the package 8, the spring-like plate 10 bends, so that the external force propagating to the pressure sensor chip 1 can be reduced.

【0017】図2は、本発明の他の実施形態に係る半導
体圧力センサの概略構成図である。本実施形態では、パ
ッケージ8を加工することにより導入孔9の中心に向か
って張り出すように薄板状のばね状板10aを形成し、
その上に台座6を接着した構成となっている。
FIG. 2 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention. In this embodiment, a thin spring-like plate 10a is formed by processing the package 8 so as to project toward the center of the introduction hole 9,
The pedestal 6 is adhered thereon.

【0018】なお、図3に示すように、導入孔9の中心
から外側に向かって張り出すようにパッケージ8を加工
することによりばね状板10bを形成し、その上に台座
6を接着するようにしてもよい。
As shown in FIG. 3, the spring-like plate 10b is formed by processing the package 8 so as to protrude outward from the center of the introduction hole 9, and the pedestal 6 is bonded thereon. It may be.

【0019】本実施形態によれば、ばね状板10a(若
しくは、ばね状板10b)をパッケージ8と同時に形成
することができるるので、ばね状板10a(若しくは、
ばね状板10b)の形成を容易に行うことが可能とな
る。
According to the present embodiment, the spring-like plate 10a (or the spring-like plate 10b) can be formed simultaneously with the package 8, so that the spring-like plate 10a (or the spring-like plate 10a) is formed.
The spring-shaped plate 10b) can be easily formed.

【0020】図4は、本発明の他の実施形態に係る半導
体圧力センサの概略構成図である。本実施形態では、外
部端子5と同一の素材を用いて導入孔9の中心に向かっ
て張り出すように薄板状のばね状板10cを設け、その
上に台座6を接着した構成となっている。この際、ばね
状板10cを形成する素材は、熱膨張係数の小さいもの
が望ましい。
FIG. 4 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention. In the present embodiment, a thin plate-like spring-like plate 10c is provided so as to project toward the center of the introduction hole 9 using the same material as the external terminal 5, and the pedestal 6 is adhered thereon. . At this time, it is desirable that the material forming the spring-like plate 10c has a small thermal expansion coefficient.

【0021】本実施形態によれば、ばね状板10cは外
部端子5と同一の素材であるため、外部端子5と同時に
形成することが可能となる。また、圧力センサチップ1
や台座6をパッケージ8にアースする際のアース配線と
してばね状板10cを用いることが可能となる。
According to the present embodiment, since the spring-like plate 10c is made of the same material as the external terminal 5, it can be formed simultaneously with the external terminal 5. In addition, the pressure sensor chip 1
The spring-like plate 10c can be used as a ground wire when grounding the pedestal 6 and the package 8 to the package 8.

【0022】[0022]

【発明の効果】以上のように、請求項1記載の発明にあ
っては、圧力変化に応じてその抵抗値が変化する歪みゲ
ージ抵抗を薄肉のダイヤフラム上に形成して成る圧力セ
ンサチップと、ダイヤフラムに通じる貫通孔を有し圧力
センサチップを支持する台座と、貫通孔に被測定圧力を
導入するための導入孔を有するとともに台座が固定され
圧力センサチップを収納するパッケージと、歪みゲージ
抵抗と電気的に接続されパッケージの外部に引き出され
る外部端子とを有して成る半導体圧力センサにおいて、
一端をパッケージに固定した薄板状のばね状板を付加
し、ばね状板上に台座を設け、ばね状板の弾性力により
台座を支持するようにしたので、パッケージに外力が印
加された際、圧力センサチップに印加される外力をばね
状板が撓むことにより緩和することが可能となり、外力
等がパッケージに印加されたとしても精度よく圧力測定
が可能な半導体圧力センサを提供することができた。
As described above, according to the first aspect of the present invention, there is provided a pressure sensor chip formed on a thin diaphragm with a strain gauge resistor whose resistance value changes according to a pressure change. A pedestal having a through hole communicating with the diaphragm and supporting the pressure sensor chip, a package having an introduction hole for introducing a measured pressure into the through hole, the pedestal being fixed and accommodating the pressure sensor chip, a strain gauge resistor, An external terminal electrically connected and drawn out of the package, the semiconductor pressure sensor comprising:
A thin spring plate with one end fixed to the package is added, a pedestal is provided on the spring plate, and the pedestal is supported by the elastic force of the spring plate, so that when an external force is applied to the package, An external force applied to the pressure sensor chip can be reduced by bending the spring-shaped plate, and a semiconductor pressure sensor capable of accurately measuring pressure even when an external force or the like is applied to a package can be provided. Was.

【0023】請求項2記載の発明にあっては、請求項1
記載の発明において、ばね状板をパッケージを加工する
ことにより形成するようにしたので、ばね状板をパッケ
ージと同時に形成することが可能となる。
According to the second aspect of the present invention, there is provided the first aspect.
In the described invention, the spring-like plate is formed by processing the package, so that the spring-like plate can be formed simultaneously with the package.

【0024】請求項3記載の発明にあっては、請求項1
記載の発明において、ばね状板を外部端子と同じ素材に
より形成するようにしたので、ばね状板を外部端子と同
時に形成することが可能となる。また、ばね状板を圧力
センサチップや台座とパッケージとをアースする際のア
ース配線として用いることが可能となる。
According to the third aspect of the present invention, there is provided the first aspect.
In the described invention, the spring-like plate is formed of the same material as the external terminal, so that the spring-like plate can be formed simultaneously with the external terminal. In addition, the spring-like plate can be used as a ground wire when grounding the pressure sensor chip or the pedestal and the package.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施形態に係る半導体圧力センサの
概略構成図である。
FIG. 1 is a schematic configuration diagram of a semiconductor pressure sensor according to an embodiment of the present invention.

【図2】本発明の他の実施形態に係る半導体圧力センサ
の概略構成図である。
FIG. 2 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention.

【図3】本発明の他の実施形態に係る半導体圧力センサ
の概略構成図である。
FIG. 3 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention.

【図4】本発明の他の実施形態に係る半導体圧力センサ
の概略構成図である。
FIG. 4 is a schematic configuration diagram of a semiconductor pressure sensor according to another embodiment of the present invention.

【図5】従来の半導体圧力センサの概略構成図である。FIG. 5 is a schematic configuration diagram of a conventional semiconductor pressure sensor.

【符号の説明】[Explanation of symbols]

1 圧力センサチップ 2 ダイヤフラム 3 歪みゲージ抵抗 4 ワイヤ 5 外部端子 6 台座 7 貫通孔 8 パッケージ 9 導入孔 10 ばね状板 11 接着剤 DESCRIPTION OF SYMBOLS 1 Pressure sensor chip 2 Diaphragm 3 Strain gauge resistance 4 Wire 5 External terminal 6 Pedestal 7 Through hole 8 Package 9 Introducing hole 10 Spring plate 11 Adhesive

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 圧力変化に応じてその抵抗値が変化する
歪みゲージ抵抗を薄肉のダイヤフラム上に形成して成る
圧力センサチップと、前記ダイヤフラムに通じる貫通孔
を有し前記圧力センサチップを支持する台座と、前記貫
通孔に被測定圧力を導入するための導入孔を有するとと
もに前記台座が固定され前記圧力センサチップを収納す
るパッケージと、前記歪みゲージ抵抗と電気的に接続さ
れ前記パッケージの外部に引き出される外部端子とを有
して成る半導体圧力センサにおいて、一端を前記パッケ
ージに固定した薄板状のばね状板を付加し、前記ばね状
板上に前記台座を設け、前記ばね状板の弾性力により前
記台座を支持するようにしたことを特徴とする半導体圧
力センサ。
1. A pressure sensor chip formed by forming a strain gauge resistor whose resistance value changes according to a pressure change on a thin diaphragm, and a through hole communicating with the diaphragm to support the pressure sensor chip. A pedestal, a package having an introduction hole for introducing a pressure to be measured into the through hole, the pedestal being fixed, and a package accommodating the pressure sensor chip, and being electrically connected to the strain gauge resistor and being outside the package. A semiconductor pressure sensor having an external terminal to be drawn out, a thin spring-shaped plate having one end fixed to the package, a pedestal provided on the spring-shaped plate, and an elastic force of the spring-shaped plate. Wherein the pedestal is supported by the semiconductor pressure sensor.
【請求項2】 前記ばね状板をパッケージを加工するこ
とにより形成するようにしたことを特徴とする請求項1
記載の半導体圧力センサ。
2. The package according to claim 1, wherein said spring-like plate is formed by processing a package.
A semiconductor pressure sensor according to claim 1.
【請求項3】 前記ばね状板を前記外部端子と同じ素材
により形成するようにしたことを特徴とする請求項1記
載の半導体圧力センサ。
3. The semiconductor pressure sensor according to claim 1, wherein said spring-like plate is formed of the same material as said external terminals.
JP13465297A 1997-05-26 1997-05-26 Semiconductor pressure sensor Expired - Fee Related JP3307274B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13465297A JP3307274B2 (en) 1997-05-26 1997-05-26 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13465297A JP3307274B2 (en) 1997-05-26 1997-05-26 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPH10325767A true JPH10325767A (en) 1998-12-08
JP3307274B2 JP3307274B2 (en) 2002-07-24

Family

ID=15133388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13465297A Expired - Fee Related JP3307274B2 (en) 1997-05-26 1997-05-26 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JP3307274B2 (en)

Also Published As

Publication number Publication date
JP3307274B2 (en) 2002-07-24

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