JPH05291482A - Hybrid integrated circuit device and fabrication thereof - Google Patents
Hybrid integrated circuit device and fabrication thereofInfo
- Publication number
- JPH05291482A JPH05291482A JP4086878A JP8687892A JPH05291482A JP H05291482 A JPH05291482 A JP H05291482A JP 4086878 A JP4086878 A JP 4086878A JP 8687892 A JP8687892 A JP 8687892A JP H05291482 A JPH05291482 A JP H05291482A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- circuit device
- sensor signal
- integrated circuit
- signal processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、センサ素子及びセンサ
信号処理回路素子を備える混成集積回路装置及びその製
造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device having a sensor element and a sensor signal processing circuit element, and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】図１は従来の混成集積回路装置を示す斜
視図である。図中11,12,12…は分岐したリードフレーム
であり、同一平面上に配置され、全体でリードフレーム
１を構成している。この中央に配置された素子搭載用の
リードフレーム11の先端に、センサ素子３及びセンサ信
号処理回路素子２が、ろう材４により接着され固定され
ている。そしてセンサ素子３及びセンサ信号処理回路素
子２は金線５により夫々のリードフレーム12…の先端部
と電気的に接続されている。これらセンサ素子３, セン
サ信号処理回路素子２及びリードフレーム12…の先端部
が、図１の破線で示されるようにモールド樹脂６により
モールド成形され、機械的に保護されている。2. Description of the Related Art FIG. 1 is a perspective view showing a conventional hybrid integrated circuit device. Reference numerals 11, 12, 12, ... In the drawing denote branched lead frames, which are arranged on the same plane and constitute the lead frame 1 as a whole. The sensor element 3 and the sensor signal processing circuit element 2 are adhered and fixed by a brazing material 4 to the tip of the lead frame 11 for mounting the element arranged in the center. The sensor element 3 and the sensor signal processing circuit element 2 are electrically connected to the tips of the lead frames 12 ... The tip ends of the sensor element 3, the sensor signal processing circuit element 2 and the lead frame 12 are molded with a molding resin 6 as shown by the broken line in FIG. 1 and mechanically protected.
【０００３】このような混成集積回路装置は、例えば磁
気センサ等の外部センサ信号源に近接させて装着され
る。センサ素子３は外部センサ信号源からのセンサ信号
を図１に示す矢符Ａの方向から受信して検出し、センサ
信号処理回路素子２に送信する。センサ信号処理回路素
子２は送信されたセンサ信号を増幅して波形処理等を行
った後、例えばＴＴＬ信号として送信する。Such a hybrid integrated circuit device is mounted in proximity to an external sensor signal source such as a magnetic sensor. The sensor element 3 receives and detects the sensor signal from the external sensor signal source in the direction of arrow A shown in FIG. 1, and transmits it to the sensor signal processing circuit element 2. The sensor signal processing circuit element 2 amplifies the transmitted sensor signal, performs waveform processing, etc., and then transmits the signal as, for example, a TTL signal.
【０００４】[0004]
【発明が解決しようとする課題】以上の如く構成される
従来の混成集積回路装置は、センサ素子３，センサ信号
処理回路素子２及びリードフレーム11,12,12…が同平面
上に配設されているので、この混成集積回路装置の信号
受信面はセンサ素子３の信号受信面と比較して面積が非
常に大きい。In the conventional hybrid integrated circuit device configured as described above, the sensor element 3, the sensor signal processing circuit element 2 and the lead frames 11, 12, 12 ... Are arranged on the same plane. Therefore, the signal receiving surface of this hybrid integrated circuit device has a very large area as compared with the signal receiving surface of the sensor element 3.
【０００５】このために外部センサ信号源の周辺に空間
的余裕が少ない場合には、混成集積回路装置を外部セン
サ信号源から離隔させて装着することになり、センサ素
子３と外部センサ信号源との離隔距離が大きくなりすぎ
ることがある。これによりノイズが発生したり時間的な
ずれを起こしたりして、受信信号の精度が低減する。ま
た、センサ素子３の信号受信面が信号源からのセンサ信
号を垂直に受信できない場合は、ゆらぎ現象が生じてセ
ンサ素子３が誤信号を検出することもある。このように
従来の混成集積回路装置は、これを装着するための空間
的な制約をうけるという問題があった。For this reason, when there is little space around the external sensor signal source, the hybrid integrated circuit device is mounted separately from the external sensor signal source, and the sensor element 3 and the external sensor signal source are connected to each other. The distance between the two may become too large. As a result, noise is generated or a time lag occurs, and the accuracy of the received signal is reduced. If the signal receiving surface of the sensor element 3 cannot vertically receive the sensor signal from the signal source, a fluctuation phenomenon may occur and the sensor element 3 may detect an erroneous signal. As described above, the conventional hybrid integrated circuit device has a problem that it is restricted in space for mounting it.
【０００６】本発明は、かかる事情に鑑みてなされたも
のであり、信号受信面を小さくすることにより、狭い空
間でも外部センサ信号源に信号受信面を近接させて装着
でき、検出感度の精度を向上できる混成集積回路装置及
びその製造方法を提供することを目的とする。The present invention has been made in view of such circumstances, and by making the signal receiving surface small, the signal receiving surface can be mounted close to the external sensor signal source even in a narrow space, and the accuracy of detection sensitivity can be improved. An object of the present invention is to provide a hybrid integrated circuit device which can be improved and a manufacturing method thereof.
【０００７】[0007]
【課題を解決するための手段】本願の第１発明に係る混
成集積回路装置は、センサ素子及びセンサ信号処理回路
装置がリードフレームの異なる平面に夫々搭載されてあ
ることを特徴とする。A hybrid integrated circuit device according to a first aspect of the present invention is characterized in that a sensor element and a sensor signal processing circuit device are mounted on different planes of a lead frame, respectively.
【０００８】本願の第２発明に係る混成集積回路装置
は、センサ素子及びセンサ信号処理回路装置が配線基板
の異なる平面に夫々搭載されてあることを特徴とする。The hybrid integrated circuit device according to the second invention of the present application is characterized in that the sensor element and the sensor signal processing circuit device are mounted on different planes of the wiring board, respectively.
【０００９】本願の第３発明に係る混成集積回路装置の
製造方法は、折り曲げられたリードフレームの異なる面
上にセンサ素子及びセンサ信号処理回路装置を夫々搭載
することを特徴とする。A method of manufacturing a hybrid integrated circuit device according to a third aspect of the present invention is characterized in that a sensor element and a sensor signal processing circuit device are mounted on different surfaces of a bent lead frame, respectively.
【００１０】本願の第４発明に係る混成集積回路装置の
製造方法は、折り曲げられた配線基板の異なる面上にセ
ンサ素子及びセンサ信号処理回路装置を夫々搭載するこ
とを特徴とする。A method of manufacturing a hybrid integrated circuit device according to a fourth aspect of the present invention is characterized in that a sensor element and a sensor signal processing circuit device are mounted on different surfaces of a bent wiring board, respectively.
【００１１】本願の第５発明に係る混成集積回路装置の
製造方法は、センサ素子及びセンサ信号処理回路装置を
リードフレーム上に夫々搭載し、これらが異なる平面を
なすように前記リードフレームを折り曲げることを特徴
とする。In a method of manufacturing a hybrid integrated circuit device according to a fifth aspect of the present invention, a sensor element and a sensor signal processing circuit device are mounted on a lead frame, respectively, and the lead frame is bent so that they form different planes. Is characterized by.
【００１２】本願の第６発明に係る混成集積回路装置の
製造方法は、センサ素子及びセンサ信号処理回路装置を
配線基板上に夫々搭載し、これらが異なる平面をなすよ
うに前記配線基板を折り曲げることを特徴とする。In a method of manufacturing a hybrid integrated circuit device according to a sixth aspect of the present invention, a sensor element and a sensor signal processing circuit device are mounted on a wiring board, respectively, and the wiring board is bent so that they form different planes. Is characterized by.
【００１３】[0013]
【作用】本発明の混成集積回路装置及びその製造方法で
は、センサ素子とセンサ信号処理回路素子とを異なる平
面に搭載している。これにより、混成集積回路装置の信
号受信面にセンサ素子のみを搭載することが可能とな
り、この信号受信面の面積が従来と比較して縮小でき
る。このことから、外部センサ信号源に混成集積回路装
置の信号受信面を近接させて空間的に効率良く装着する
ことができ、センサ信号の検出感度が向上する。In the hybrid integrated circuit device and the manufacturing method thereof according to the present invention, the sensor element and the sensor signal processing circuit element are mounted on different planes. As a result, only the sensor element can be mounted on the signal receiving surface of the hybrid integrated circuit device, and the area of this signal receiving surface can be reduced as compared with the conventional case. Therefore, the signal receiving surface of the hybrid integrated circuit device can be brought close to the external sensor signal source and can be mounted spatially efficiently, and the detection sensitivity of the sensor signal is improved.
【００１４】[0014]
【実施例】以下、本発明をその実施例１を示す図面に基
づき具体的に説明する。図２は第１実施例の混成集積回
路装置の斜視図である。図中21,22,22,23,23,24,24は分
岐したリードフレームであり、全体でリードフレーム１
を構成している。中央に配置された素子搭載用のリード
フレーム21及びリードフレーム24,24 の先端がＬ字型に
曲成されているものを用いる。素子搭載用のリードフレ
ーム21のＬ字型に曲成されてできた夫々の面に、先端側
からセンサ素子３，センサ信号処理回路素子２をろう材
４により接着し、固定する。 次に、センサ素子３とリ
ードフレーム24,24 のＬ字型に曲成された先端とを、金
線５により電気的に接続し、センサ信号処理回路素子２
とリードフレーム22,22,23,23,24,24 夫々の先端部と
を、金線５により電気的に接続する。これらセンサ素子
３, センサ信号処理回路素子２及びリードフレーム22,2
2,23,23,24,24 の先端部を、図２において破線で示され
るように、モールド樹脂６によりモールド成形し、機械
的に保護する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the first embodiment. FIG. 2 is a perspective view of the hybrid integrated circuit device of the first embodiment. In the figure, 21,22,22,23,23,24,24 are branched lead frames, and the lead frame 1 as a whole
Are configured. An element mounting lead frame 21 and lead frames 24, 24 arranged in the center are used in which the tips are bent in an L shape. The sensor element 3 and the sensor signal processing circuit element 2 are adhered and fixed to the respective surfaces formed by bending the element mounting lead frame 21 into an L-shape by a brazing material 4 from the tip side. Next, the sensor element 3 and the L-shaped bent ends of the lead frames 24, 24 are electrically connected by the gold wire 5, and the sensor signal processing circuit element 2
The lead frames 22, 22, 23, 23, 24, 24 are electrically connected to the respective tip portions by the gold wire 5. These sensor element 3, sensor signal processing circuit element 2 and lead frame 22,2
The tips of the 2,23,23,24,24 are molded with a molding resin 6 and mechanically protected, as shown by the broken line in FIG.
【００１５】上述した混成集積回路装置を、例えば磁気
センサ等の外部センサ信号源に信号受信面を近接させて
装着する。センサ素子３は外部センサ信号源の図１に示
す矢符Ｂの方向からのセンサ信号を受信して検出し、セ
ンサ信号処理回路素子２に送信する。センサ信号処理回
路素子２は送信されたセンサ信号を増幅して波形処理等
を行った後、例えばＴＴＬ信号として送信する。The hybrid integrated circuit device described above is mounted on an external sensor signal source such as a magnetic sensor with its signal receiving surface in close proximity. The sensor element 3 receives and detects the sensor signal from the direction of the arrow B shown in FIG. 1 of the external sensor signal source, and transmits it to the sensor signal processing circuit element 2. The sensor signal processing circuit element 2 amplifies the transmitted sensor signal, performs waveform processing, etc., and then transmits the signal as, for example, a TTL signal.
【００１６】このような混成集積回路装置は、Ｌ字型に
折り曲げられた中央のリードフレーム21の先端部にセン
サ素子のみを搭載しており、この装置の信号受信面は従
来と比較して、その面積が縮小されている。In such a hybrid integrated circuit device, only the sensor element is mounted on the tip of the central lead frame 21 bent into an L shape, and the signal receiving surface of this device is different from the conventional one. Its area has been reduced.
【００１７】なお、上述した混成集積回路装置では、リ
ードフレーム21,24,24を予めＬ字型に折り曲げたものを
使用しているが、センサ素子３及びセンサ信号処理回路
素子２を搭載した後に、リードフレーム21をＬ字型に折
り曲げても良い。In the above-mentioned hybrid integrated circuit device, the lead frames 21, 24, 24 are used by bending them into an L-shape in advance. However, after mounting the sensor element 3 and the sensor signal processing circuit element 2, The lead frame 21 may be bent in an L shape.
【００１８】次に、別の実施例をこれを示す図面に基づ
いて説明する。図３は第２実施例の混成集積回路装置の
斜視図である。図中31はフレキシブル配線基板であり、
この先端側からセンサ素子３，センサ信号処理回路素子
２を搭載する。これらの素子は半田７によりフレキシブ
ル配線基板31に夫々固定され、また電気的に接続され
る。このようなフレキシブル配線基板31は、センサ素子
３が搭載される先端部がセンサ素子３が搭載されるのに
必要な最小限の面積になっている。このようにセンサ素
子３，センサ信号処理回路素子２を搭載した後、これら
の素子が異なる平面に在るように、フレキシブル配線基
板31を折り曲げる。Next, another embodiment will be described with reference to the accompanying drawings. FIG. 3 is a perspective view of the hybrid integrated circuit device of the second embodiment. In the figure, 31 is a flexible wiring board,
The sensor element 3 and the sensor signal processing circuit element 2 are mounted from the tip side. These elements are fixed to the flexible wiring board 31 by solder 7 and are electrically connected. In such a flexible wiring board 31, a tip portion on which the sensor element 3 is mounted has a minimum area required for mounting the sensor element 3. After mounting the sensor element 3 and the sensor signal processing circuit element 2 in this way, the flexible wiring board 31 is bent so that these elements are on different planes.
【００１９】そして、フレキシブル配線基板31に外部接
続リード32,32 …を結線し、これらセンサ素子３, セン
サ信号処理回路素子２，フレキシブル配線基板31及び外
部接続リード32,32 …の先端部を、図３において破線で
示されるように、モールド樹脂６によりモールド成形
し、機械的に保護する。External connection leads 32, 32 ... Are connected to the flexible wiring board 31, and the tip portions of these sensor element 3, sensor signal processing circuit element 2, flexible wiring board 31, and external connection leads 32, 32 are connected. As shown by the broken line in FIG. 3, it is molded with the molding resin 6 and mechanically protected.
【００２０】このような混成集積回路装置を、例えば磁
気センサ等の外部センサ信号源に信号受信面を近接させ
て装着する。センサ素子３は外部センサ信号源からのセ
ンサ信号を図３に示す矢符Ｃの方向から受信して検出
し、センサ信号処理回路素子２に送信する。センサ信号
処理回路素子２は送信されたセンサ信号を増幅して波形
処理等を行った後、例えばＴＴＬ信号として送信する。Such a hybrid integrated circuit device is mounted on an external sensor signal source such as a magnetic sensor with its signal receiving surface in close proximity. The sensor element 3 receives and detects the sensor signal from the external sensor signal source in the direction of arrow C shown in FIG. 3, and transmits it to the sensor signal processing circuit element 2. The sensor signal processing circuit element 2 amplifies the transmitted sensor signal, performs waveform processing, etc., and then transmits the signal as, for example, a TTL signal.
【００２１】上述した第２実施例である混成集積回路装
置の外部センサ信号受信面は、センサ素子３及び、これ
を結線するための配線の面積だけであり、従来に比較し
てその面積は縮小されている。The external sensor signal receiving surface of the hybrid integrated circuit device of the second embodiment described above is only the area of the sensor element 3 and the wiring for connecting the same, and the area is reduced as compared with the conventional one. Has been done.
【００２２】なお、第１実施例においてはワイヤボンデ
ィングによりセンサ素子３及びセンサ信号処理回路装置
２とリードフレーム１とを、第２実施例においては半田
により、センサ素子３及びセンサ信号処理回路装置２と
フレキシブル配線基板31とを電気的接続しているが、こ
れに限るものではなく、フェースダウン方式であるフリ
ップチップ形態又は面実装パッケージ形態である各素子
を、ろう材等によりリードフレーム１，又はフレキシブ
ル配線基板31に電気的接続しても良い。In the first embodiment, the sensor element 3 and the sensor signal processing circuit device 2 and the lead frame 1 are wire-bonded, and in the second embodiment, the sensor element 3 and the sensor signal processing circuit device 2 are soldered. The flexible wiring board 31 and the flexible wiring board 31 are electrically connected to each other. However, the invention is not limited to this. It may be electrically connected to the flexible wiring board 31.
【００２３】また、第２実施例においてはセンサ素子３
及びセンサ信号処理回路装置２を搭載する配線基板にフ
レキシブル配線基板31を用いているが、これ以外の配線
基板を用いても良い。Further, in the second embodiment, the sensor element 3
Although the flexible wiring board 31 is used as the wiring board on which the sensor signal processing circuit device 2 is mounted, other wiring boards may be used.
【００２４】[0024]
【発明の効果】以上のように、本発明の混成集積回路装
置及びその製造方法においては信号受信面の面積が縮小
でき、装置が小型化されるため、外部センサ信号源近傍
の狭い空間にも信号受信面を近接させて装着でき、信号
の受信感度を向上させる等、本発明は優れた効果を奏す
る。As described above, in the hybrid integrated circuit device and the manufacturing method thereof according to the present invention, the area of the signal receiving surface can be reduced and the device can be miniaturized. Therefore, even in a narrow space near the external sensor signal source. The present invention has excellent effects such that the signal receiving surfaces can be mounted close to each other and the signal receiving sensitivity is improved.
【図１】従来の混成集積回路装置を示す斜視図である。FIG. 1 is a perspective view showing a conventional hybrid integrated circuit device.
【図２】本発明による第１実施例の混成集積回路装置の
斜視図である。FIG. 2 is a perspective view of the hybrid integrated circuit device according to the first embodiment of the present invention.
【図３】本発明による第２実施例の混成集積回路装置の
斜視図である。FIG. 3 is a perspective view of a hybrid integrated circuit device according to a second embodiment of the present invention.
２ センサ信号処理回路素子 ３ センサ素子 ５ 金線 ６ モールド樹脂 ７ 半田 １，11,12,21,22,23,24 リードフレーム 31 フレキシブル配線基板 32 外部接続リード Ａ，Ｂ，Ｃ 外部信号受信方向 2 Sensor signal processing circuit element 3 Sensor element 5 Gold wire 6 Mold resin 7 Solder 1,11,12,21,22,23,24 Lead frame 31 Flexible wiring board 32 External connection lead A, B, C External signal receiving direction
Claims (6)
ンサ素子の出力を信号処理するセンサ信号処理回路素子
とをリードフレーム上に備える混成集積回路装置におい
て、 異なる平面を有する前記リードフレームの一方の平面に
前記センサ素子が、他方の平面に前記センサ信号処理回
路素子が搭載されてあることを特徴とする混成集積回路
装置。1. A hybrid integrated circuit device comprising a sensor element for detecting an external signal and a sensor signal processing circuit element for processing the output of the sensor element on a lead frame, wherein one of the lead frames having different planes. 2. The hybrid integrated circuit device, wherein the sensor element is mounted on the flat surface and the sensor signal processing circuit element is mounted on the other flat surface.
ンサ素子の出力を信号処理するセンサ信号処理回路素子
とを配線基板上に備える混成集積回路装置において、 異なる平面を有する前記配線基板の一方の平面に前記セ
ンサ素子が、他方の平面に前記センサ信号処理回路素子
が搭載されてあることを特徴とする混成集積回路装置。2. A hybrid integrated circuit device comprising a sensor element for detecting an external signal and a sensor signal processing circuit element for processing an output of the sensor element on a wiring board, wherein one of the wiring boards has different planes. 2. The hybrid integrated circuit device, wherein the sensor element is mounted on the flat surface and the sensor signal processing circuit element is mounted on the other flat surface.
ンサ素子の出力を信号処理するセンサ信号処理回路素子
とをリードフレーム上に備える混成集積回路装置を製造
する方法において、 折り曲げられた前記リードフレームの一方の面上に前記
センサ素子を搭載する工程と、他方の面上に前記センサ
信号処理回路素子を搭載する工程と、これらを相互結線
し、モールドする工程とを有することを特徴とする混成
集積回路装置の製造方法。3. A method for manufacturing a hybrid integrated circuit device comprising a sensor element for detecting an external signal, and a sensor signal processing circuit element for processing the output of the sensor element on a lead frame, wherein the bent lead is provided. A step of mounting the sensor element on one surface of the frame, a step of mounting the sensor signal processing circuit element on the other surface, and a step of interconnecting these and molding. Manufacturing method of hybrid integrated circuit device.
ンサ素子の出力を信号処理するセンサ信号処理回路素子
とを配線基板上に備える混成集積回路装置を製造する方
法において、 折り曲げられた前記配線基板の一方の面上に前記センサ
素子を搭載する工程と、他方の面上に前記センサ信号処
理回路素子を搭載する工程と、これらを結線し、モール
ドする工程とを有することを特徴とする混成集積回路装
置の製造方法。4. A method of manufacturing a hybrid integrated circuit device, comprising: a sensor element for detecting an external signal; and a sensor signal processing circuit element for processing the output of the sensor element on a wiring board. A hybrid comprising a step of mounting the sensor element on one surface of the substrate, a step of mounting the sensor signal processing circuit element on the other surface, and a step of connecting these and molding. Manufacturing method of integrated circuit device.
ンサ素子の出力を信号処理するセンサ信号処理回路素子
とをリードフレーム上に備える混成集積回路装置を製造
する方法において、 前記センサ素子及び前記センサ信号処理回路素子を前記
リードフレーム上に搭載する工程と、前記センサ素子及
び前記センサ信号処理回路素子が夫々異なる平面上に在
るべく前記リードフレームを折り曲げる工程と、これら
を結線し、モールドする工程とを有することを特徴とす
る混成集積回路装置の製造方法。5. A method for manufacturing a hybrid integrated circuit device comprising a sensor element for detecting an external signal and a sensor signal processing circuit element for processing an output of the sensor element on a lead frame, the method comprising: The step of mounting the sensor signal processing circuit element on the lead frame, the step of bending the lead frame so that the sensor element and the sensor signal processing circuit element are on different planes, and connecting and molding them And a method of manufacturing a hybrid integrated circuit device.
ンサ素子の出力を信号処理するセンサ信号処理回路素子
とを配線基板上に備える混成集積回路装置を製造する方
法において、 前記センサ素子及び前記センサ信号処理回路素子を前記
配線基板上に搭載する工程と、前記センサ素子及び前記
センサ信号処理回路素子が夫々異なる平面上に在るべく
前記配線基板を折り曲げる工程と、これらを結線し、モ
ールドする工程とを有することを特徴とする混成集積回
路装置の製造方法。6. A method for manufacturing a hybrid integrated circuit device comprising a sensor element for detecting an external signal and a sensor signal processing circuit element for processing the output of the sensor element on a wiring board, the method comprising: A step of mounting the sensor signal processing circuit element on the wiring board, a step of bending the wiring board so that the sensor element and the sensor signal processing circuit element are on different planes, and connecting and molding them And a method of manufacturing a hybrid integrated circuit device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086878A JP2807944B2 (en) | 1992-04-08 | 1992-04-08 | Hybrid integrated circuit device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086878A JP2807944B2 (en) | 1992-04-08 | 1992-04-08 | Hybrid integrated circuit device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05291482A true JPH05291482A (en) | 1993-11-05 |
| JP2807944B2 JP2807944B2 (en) | 1998-10-08 |
Family
ID=13899097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4086878A Expired - Fee Related JP2807944B2 (en) | 1992-04-08 | 1992-04-08 | Hybrid integrated circuit device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2807944B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6035712A (en) * | 1997-03-14 | 2000-03-14 | Denso Corporation | Sensor device and method of producing the same using lead frame |
| US7187063B2 (en) | 2002-07-29 | 2007-03-06 | Yamaha Corporation | Manufacturing method for magnetic sensor and lead frame therefor |
| US7221157B2 (en) * | 2004-02-06 | 2007-05-22 | Denso Corporation | Magnetic sensor apparatus and manufacturing method thereof |
| EP1811566A2 (en) | 2006-01-20 | 2007-07-25 | Memsic, Inc. | Three-dimensional Multi-Chips and tri-axial sensors and methods of manufacuring the same |
| KR100742104B1 (en) * | 1999-10-06 | 2007-07-25 | 루센트 테크놀러지스 인크 | Multifunction lead frame and integrated circuit package incorporating the same |
| JP2009070894A (en) * | 2007-09-11 | 2009-04-02 | Rohm Co Ltd | Semiconductor device |
| US7524696B2 (en) | 2005-02-25 | 2009-04-28 | Yamaha Corporation | Sensor including lead frame and method of forming sensor including lead frame |
| US7829982B2 (en) | 2005-02-18 | 2010-11-09 | Yamaha Corporation | Lead frame, sensor including lead frame and method of forming sensor including lead frame |
| JP2013079973A (en) * | 2003-08-26 | 2013-05-02 | Allegro Microsyst Inc | Current sensor |
| EP2894489A1 (en) * | 2014-01-13 | 2015-07-15 | Micronas GmbH | Sensor device |
-
1992
- 1992-04-08 JP JP4086878A patent/JP2807944B2/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6035712A (en) * | 1997-03-14 | 2000-03-14 | Denso Corporation | Sensor device and method of producing the same using lead frame |
| KR100742104B1 (en) * | 1999-10-06 | 2007-07-25 | 루센트 테크놀러지스 인크 | Multifunction lead frame and integrated circuit package incorporating the same |
| US7541665B2 (en) | 2002-07-29 | 2009-06-02 | Yamaha Corporation | Lead frame for a magnetic sensor |
| US7187063B2 (en) | 2002-07-29 | 2007-03-06 | Yamaha Corporation | Manufacturing method for magnetic sensor and lead frame therefor |
| US8138757B2 (en) | 2002-07-29 | 2012-03-20 | Yamaha Corporation | Manufacturing method for magnetic sensor and lead frame therefor |
| US7494838B2 (en) | 2002-07-29 | 2009-02-24 | Yamaha Corporation | Manufacturing method for magnetic sensor and lead frame therefor |
| JP2013079973A (en) * | 2003-08-26 | 2013-05-02 | Allegro Microsyst Inc | Current sensor |
| US7221157B2 (en) * | 2004-02-06 | 2007-05-22 | Denso Corporation | Magnetic sensor apparatus and manufacturing method thereof |
| US7829982B2 (en) | 2005-02-18 | 2010-11-09 | Yamaha Corporation | Lead frame, sensor including lead frame and method of forming sensor including lead frame |
| US7524696B2 (en) | 2005-02-25 | 2009-04-28 | Yamaha Corporation | Sensor including lead frame and method of forming sensor including lead frame |
| US7536909B2 (en) | 2006-01-20 | 2009-05-26 | Memsic, Inc. | Three-dimensional multi-chips and tri-axial sensors and methods of manufacturing the same |
| EP1811566A3 (en) * | 2006-01-20 | 2007-11-21 | Memsic, Inc. | Three-dimensional Multi-Chips and tri-axial sensors and methods of manufacuring the same |
| JP2010267983A (en) * | 2006-01-20 | 2010-11-25 | Memsic Inc | Three-dimensional multi-chips, tri-axial sensors, and methods of manufacturing the same |
| JP2007194623A (en) * | 2006-01-20 | 2007-08-02 | Memsic Inc | Three-dimensional multichip, three-axis sensor and manufacturing method therefor |
| EP1811566A2 (en) | 2006-01-20 | 2007-07-25 | Memsic, Inc. | Three-dimensional Multi-Chips and tri-axial sensors and methods of manufacuring the same |
| JP2009070894A (en) * | 2007-09-11 | 2009-04-02 | Rohm Co Ltd | Semiconductor device |
| EP2894489A1 (en) * | 2014-01-13 | 2015-07-15 | Micronas GmbH | Sensor device |
| US9632148B2 (en) | 2014-01-13 | 2017-04-25 | Micronas Gmbh | Sensor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2807944B2 (en) | 1998-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6987312B2 (en) | Semiconductor device with sensor and/or actuator surface and method for producing it | |
| JP5036764B2 (en) | Current sensor | |
| JPH05291482A (en) | Hybrid integrated circuit device and fabrication thereof | |
| JP4486591B2 (en) | Lead terminal lead-out type electronic components | |
| JP4029453B2 (en) | Semiconductor acceleration sensor | |
| JPH08220130A (en) | Piezoelectric acceleration sensor | |
| JP3381515B2 (en) | Acceleration sensor | |
| US6498294B1 (en) | Package for high frequency device | |
| JP4085517B2 (en) | Distance sensor and method for fixing the distance sensor | |
| JP3407631B2 (en) | Pressure sensor | |
| JP4016454B2 (en) | Electronic components | |
| JPS61281559A (en) | Photodetector | |
| US20230094395A1 (en) | Magnetic sensor | |
| JP2711116B2 (en) | Magnetoresistive element | |
| JP3751528B2 (en) | Sensor and pressure sensor | |
| JP2007192790A (en) | Semiconductor pressure sensor | |
| JPH0514029A (en) | Circuit module for automobile glass antenna | |
| JPS6327724A (en) | Semiconductor pressure sensor | |
| JPH06201732A (en) | Electric current sensor | |
| JP3429437B2 (en) | Package for solid-state imaging device and solid-state imaging device using the same | |
| JPH11211940A (en) | Optical module | |
| JP3307274B2 (en) | Semiconductor pressure sensor | |
| EP0917196A2 (en) | Semiconductor element module and semiconductor device | |
| JPH10325770A (en) | Semiconductor pressure sensor | |
| JPH09126834A (en) | Sensor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |