JPH10323773A - Laser assisted processing device - Google Patents
Laser assisted processing deviceInfo
- Publication number
- JPH10323773A JPH10323773A JP9137060A JP13706097A JPH10323773A JP H10323773 A JPH10323773 A JP H10323773A JP 9137060 A JP9137060 A JP 9137060A JP 13706097 A JP13706097 A JP 13706097A JP H10323773 A JPH10323773 A JP H10323773A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- processed
- optical
- processing
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はレーザアシストによる加
工装置に関し、詳しくは、高性能の光学レンズを必要と
する応用分野〔カメラ、計測装置、レーザプリンタ等〕
や大口径の光学素子を必要とするプロジェクタ、大型レ
ーザ装置及びリソグラフィー装置に必要とされるレン
ズ、ミラー等を高精度で製作するためのレーザアシスト
による加工装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser assisted processing apparatus, and more particularly, to an application field requiring a high-performance optical lens (camera, measuring apparatus, laser printer, etc.).
The present invention relates to a laser-assisted processing device for manufacturing a lens, a mirror, and the like required for a projector, a large-sized laser device, and a lithography device that require an optical element having a large diameter or a large diameter.
【０００２】[0002]
【従来の技術】例えば、精密加工用として使用されるレ
ーザ加工装置などでは、微小なスポットにレーザを集光
させるために高精度の光学レンズや反射ミラー等が必要
である。一般に、この種の光学素子〔以下、光学レンズ
と称す〕は、光学ガラスで組成されるものと、光学プラ
スチックで組成されるものとに大別される。2. Description of the Related Art For example, a laser processing apparatus used for precision processing requires a high-precision optical lens, a reflection mirror, and the like in order to focus a laser beam on a minute spot. Generally, this type of optical element (hereinafter, referred to as an optical lens) is roughly classified into an element made of optical glass and an element made of optical plastic.
【０００３】これらいずれか一方で組成される光学レン
ズでは、その光学面〔以下、レンズ面と称す〕の形状
が、レーザ光の集光特性に大きく影響する。即ち、前記
光学レンズに入射するレーザが平行波面を具備していた
としても、その光学レンズが波面収差を有している場
合、レーザ光の集光スポット径が増大し、結果として集
光強度が低下する。In an optical lens composed of any one of these, the shape of the optical surface (hereinafter, referred to as a lens surface) has a great effect on the laser light focusing characteristics. In other words, even if the laser incident on the optical lens has a parallel wavefront, if the optical lens has a wavefront aberration, the focused spot diameter of the laser beam increases, and as a result, the focused intensity decreases. descend.
【０００４】そのため、上述した光学レンズでは、ポイ
ントに集光したレーザが最小のスポット径を持つような
レンズ面を形成する必要がある。そこで、本出願人は、
短波長の紫外線レーザを加工対象物の表面に照射するこ
とによりその表面をエッチングして高精度な非球面加工
を実現したレンズ面の形成方法を先に提案している（特
開平８−２００７７号公報）。Therefore, in the above-mentioned optical lens, it is necessary to form a lens surface such that the laser focused on the point has a minimum spot diameter. Therefore, the applicant has
A method of forming a lens surface which realizes highly accurate aspherical processing by irradiating the surface of a processing object with a short wavelength ultraviolet laser to irradiate the surface has been previously proposed (JP-A-8-20077). Gazette).
【０００５】このレンズ面の形成方法は、光学ガラスか
らなる母体の表面に光学素子用樹脂をコーティングした
光学レンズのレンズ面の反射波面を干渉計により測定
し、その干渉計による反射波面をコンピュータシステム
によりモニタリングしながら、そのコンピュータシステ
ムからのモニタリング情報に基づいて前記レンズ面に対
して短波長紫外線レーザを走査させることにより、その
レンズ面を前記短波長紫外線レーザにより非接触でエッ
チングして最適な反射波面となる形状に表面加工するも
のである。In this method of forming a lens surface, an interferometer measures a reflected wavefront of a lens surface of an optical lens in which a resin for an optical element is coated on a surface of a base made of optical glass, and the reflected wavefront of the interferometer is used as a computer system. By scanning the lens surface with the short wavelength ultraviolet laser based on the monitoring information from the computer system while monitoring by, the lens surface is etched in a non-contact manner by the short wavelength ultraviolet laser to achieve optimal reflection. The surface is processed into a wavefront shape.
【０００６】[0006]
【発明が解決しようとする課題】ところで、前述したレ
ンズ面の形成方法では、紫外線レーザによるエッチング
量が大きくなると、デブリス（飛散物）の再付着等で光
学レンズのレンズ面が大きく荒れる可能性が大きく、そ
の結果、光学レンズの透明性が損なわれる可能性が生じ
てきた。In the above-described method of forming a lens surface, if the amount of etching by the ultraviolet laser increases, the lens surface of the optical lens may be greatly roughened due to reattachment of debris (scattered matter). Largely, the possibility has arisen that the transparency of the optical lens is impaired.
【０００７】そこで、本出願人は前述したレンズ面の形
成方法におけるレーザ加工を改善するために本発明を提
案し、その目的とするところは、紫外線レーザの照射に
より生じるデブリス（飛散物）の再付着を可能なかぎり
抑制することにある。Therefore, the present applicant has proposed the present invention in order to improve the laser processing in the above-described method for forming a lens surface, and aims at regenerating debris (scattered matter) generated by irradiation with an ultraviolet laser. The object is to suppress adhesion as much as possible.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
の技術的手段として、本発明は、加工対象物の被加工面
にメインレーザを照射して前記被加工面をエッチングす
る第１のレーザ発振器と、前記メインレーザの照射部位
にアシストレーザを照射して前記メインレーザの照射部
位を含む部位を局部的に加熱する第２のレーザ発振器
と、前記メインレーザの照射とアシストレーザの照射を
最適制御すると共に、前記メインレーザ及びアシストレ
ーザと加工対象物とを相対的に移動させる駆動機構を位
置制御する制御器とを具備し、アシストレーザによる局
部的な加熱によりメインレーザの照射によるエネルギー
不足を補足し、メインレーザの照射によるエッチングで
発生するデブリス（飛散物）が再付着することを抑制す
ることを特徴とする。As a technical means for achieving the above object, the present invention provides a first laser for irradiating a processing surface of a processing object with a main laser to etch the processing surface. An oscillator, a second laser oscillator that irradiates an assist laser to an irradiation part of the main laser and locally heats a part including the irradiation part of the main laser, and optimizes irradiation of the main laser and irradiation of the assist laser. And a controller for controlling the position of a drive mechanism for relatively moving the main laser and the assist laser and the object to be processed, so that energy shortage due to irradiation of the main laser by local heating by the assist laser is provided. Supplementally, it suppresses the re-adhesion of debris (scattered matter) generated by etching by irradiation of the main laser.
【０００９】尚、前記メインレーザとしては短波長の紫
外線レーザ、アシストレーザとしては長波長の炭酸ガス
レーザが好適である。Preferably, the main laser is a short wavelength ultraviolet laser, and the assist laser is a long wavelength carbon dioxide laser.
【００１０】具体的に、本発明が適用される加工対象物
としては、光学ガラスからなる母体の表面に光学素子用
樹脂をコーティングした光学面、又は、光学ガラス又は
石英ガラスからなる母体の光学面を被加工面とし、その
光学面を前記紫外線レーザ及び炭酸ガスレーザの照射に
より最適な透過波面又は反射波面となる形状に加工す
る。Specifically, the object to be processed to which the present invention is applied is an optical surface in which a resin for an optical element is coated on the surface of a base made of optical glass, or an optical surface of a base made of optical glass or quartz glass. Is processed, and the optical surface is processed into an optimal transmitted wavefront or reflected wavefront by irradiation with the ultraviolet laser and the carbon dioxide gas laser.
【００１１】[0011]
【発明の実施の形態】本発明の実施形態を図１乃至図４
に示して説明する。1 to 4 show an embodiment of the present invention.
And will be described.
【００１２】本発明のレーザアシストによる加工装置
は、図１に示すように加工対象物１の被加工面２にメイ
ンレーザとして短波長の紫外線レーザＭＬを照射する第
１のレーザ発振器３と、その紫外線レーザＭＬの照射部
位にアシストレーザとして長波長の炭酸ガスレーザＡＬ
を照射して紫外線レーザＭＬの照射部位を含む部位を局
部的に加熱する第２のレーザ発振器４と、二つのレーザ
発振器３，４に接続され、紫外線レーザＭＬのメイン照
射と炭酸ガスレーザＡＬのアシスト照射を最適制御する
と共に、位置決め載置された加工対象物１をモータ等の
駆動源（図示せず）によりＸＹ方向に移動可能とする駆
動機構５（以下、ＸＹテーブルと称す）を位置制御する
制御器６とを具備する。As shown in FIG. 1, the laser-assisted processing apparatus of the present invention comprises a first laser oscillator 3 for irradiating a processing surface 2 of a processing object 1 with a short-wavelength ultraviolet laser ML as a main laser, A long wavelength carbon dioxide gas laser AL as an assist laser for the irradiation part of the ultraviolet laser ML
And a second laser oscillator 4 for locally heating a portion including the portion to be irradiated with the ultraviolet laser ML and two laser oscillators 3 and 4 for main irradiation of the ultraviolet laser ML and assist of the carbon dioxide gas laser AL. In addition to optimally controlling the irradiation, the position of a drive mechanism 5 (hereinafter, referred to as an XY table) that allows the workpiece 1 positioned and mounted to be moved in the XY directions by a drive source (not shown) such as a motor is controlled. And a controller 6.
【００１３】尚、前述したレーザ発振器３，４の前方に
は、紫外線レーザＭＬ及び炭酸ガスレーザＡＬを加工対
象物１の被加工面２上でスポット状に集光させるための
集束レンズ７，８がそれぞれ配置され、更にその前方に
紫外線レーザＭＬ及び炭酸ガスレーザＡＬを被加工面２
上に方向転換させるための反射ミラー９，１０を配置す
る。In front of the laser oscillators 3 and 4, focusing lenses 7 and 8 for condensing the ultraviolet laser ML and the carbon dioxide laser AL in a spot shape on the surface 2 to be processed of the processing object 1 are provided. The laser beam ML and the carbon dioxide gas laser AL are further disposed in front of the
Reflecting mirrors 9 and 10 for turning the direction upward are arranged.
【００１４】この実施形態で適用する加工対象物１の被
加工面２は、光学ガラスからなる母体の表面に光学素子
用樹脂をコーティングした光学面、又は、光学ガラス又
は石英ガラスからなる母体の光学面が好適である。具体
的に、加工対象物１としては、例えばＢＫ７等の光学ガ
ラスからなる母体の表面に、ポリメタクリル酸メチル
（ＰＭＭＡ）やポリカーボネート等の光学素子用樹脂を
例えばその膜厚が数ミクロンから数ミリ程度となるよう
にコーティングした光学レンズがある。その他、光学ガ
ラス又は石英ガラスからなる母体自体の光学レンズであ
ってもよい。The surface 2 to be processed of the object 1 to be processed in this embodiment is an optical surface in which a resin for an optical element is coated on the surface of a base made of optical glass, or an optical surface of a base made of optical glass or quartz glass. Surfaces are preferred. Specifically, as the object 1 to be processed, for example, a resin for an optical element such as polymethyl methacrylate (PMMA) or polycarbonate is coated on the surface of a base made of optical glass such as BK7, for example, with a thickness of several microns to several millimeters. There are optical lenses that are coated to a degree. In addition, it may be an optical lens of the base itself made of optical glass or quartz glass.
【００１５】短波長の紫外線レーザＭＬをメイン照射す
る第１のレーザ発振器３は、例えば１１０〜２２０ｎｍ
の短波長を有する紫外線レーザＭＬを光源とするもの
で、その紫外線レーザＭＬとしては、光学素子用樹脂を
コーティングした場合には１９３ｎｍの短波長のＡｒＦ
からなるエキシマレーザが好適であり、また、石英ガラ
スの場合には、１５３ｎｍの短波長のフッ素レーザが好
適であり、その他水素レーザ等が使用可能である。ま
た、長波長の炭酸ガスレーザＡＬをアシスト照射する第
２のレーザ発振器４は、例えば１０μｍ程度の長波長を
有する炭酸ガスレーザＡＬを光源とすることが好適であ
る。尚、アシストレーザとしては、前述の炭酸ガスレー
ザ以外にも、例えば、熱を発生させるレーザであればよ
い。The first laser oscillator 3 for main irradiation with the short wavelength ultraviolet laser ML is, for example, 110 to 220 nm.
The ultraviolet laser ML having a short wavelength of 193 nm is used as a light source. When the ultraviolet laser ML is coated with a resin for an optical element, ArF having a short wavelength of 193 nm is used.
In the case of quartz glass, a fluorine laser having a short wavelength of 153 nm is preferable, and a hydrogen laser or the like can be used. Further, it is preferable that the second laser oscillator 4 for assisting irradiation with the long-wavelength carbon dioxide laser AL is, for example, a carbon dioxide laser AL having a long wavelength of about 10 μm as a light source. The assist laser may be, for example, a laser that generates heat, other than the above-described carbon dioxide gas laser.
【００１６】このレーザアシストによる加工装置では、
レーザ発振器３，４から紫外線レーザＭＬ及び炭酸ガス
レーザＡＬを集束レンズ７，８及び反射ミラー９，１０
を介してＸＹテーブル５上の加工対象物１に向けて照射
する。この時、制御器６により被加工面２上に紫外線レ
ーザＭＬをメイン照射すると共に炭酸ガスレーザＡＬを
アシスト照射するように制御すると共に、紫外線レーザ
ＭＬ及び炭酸ガスレーザＡＬが被加工面２の全面に移動
するようにＸＹテーブル５を駆動制御する。In this laser assisted processing apparatus,
The ultraviolet laser ML and the carbon dioxide laser AL are supplied from the laser oscillators 3 and 4 to the focusing lenses 7 and 8 and the reflection mirrors 9 and 10.
Irradiates the object 1 on the XY table 5 via the. At this time, the controller 6 controls the main surface of the work surface 2 to be irradiated with the ultraviolet laser ML and the carbon dioxide gas laser AL for assist irradiation, and moves the ultraviolet laser ML and the carbon dioxide gas laser AL over the entire surface of the work surface 2. The XY table 5 is driven and controlled so as to perform the operation.
【００１７】前述した短波長の紫外線レーザＭＬのメイ
ン照射により被加工面２を非接触でエッチングする。被
加工面２が光学素子用樹脂の場合には高分子材料のＣ−
Ｃ結合が破壊されてポリマーからモノマーへの分解が生
じ、また、石英ガラスの場合にはＳｉＯ2 が飛散し、エ
ッチング後の表面がスムーズな加工が実現される。The work surface 2 is etched in a non-contact manner by the main irradiation of the short wavelength ultraviolet laser ML described above. When the processing surface 2 is a resin for an optical element, the polymer material C-
The C bond is broken and the polymer is decomposed into a monomer. In the case of quartz glass, SiO 2 is scattered, and the surface after the etching is processed smoothly.
【００１８】この時、前述した紫外線レーザＭＬによる
エッチング量が大きくなってもデブリス（飛散物）が被
加工面２に再付着して透明性が損なわれることはない。
即ち、本発明では、この紫外線レーザＭＬのメイン照射
と共にその紫外線レーザＭＬの照射部位に炭酸ガスレー
ザＡＬをアシスト照射することにより、紫外線レーザＭ
Ｌの照射部位を含む部位を局部的に加熱し、紫外線レー
ザＭＬの照射によるエネルギー不足を炭酸ガスレーザＡ
Ｌの照射により補足し、紫外線レーザＭＬの照射による
エッチングで発生するデブリス（飛散物）が再付着する
ことを抑制し、被加工面２の透明性が確保できる。At this time, even if the etching amount by the ultraviolet laser ML becomes large, debris (scattered matter) does not reattach to the processing surface 2 and the transparency is not impaired.
That is, in the present invention, the irradiation of the ultraviolet laser ML is performed by assist irradiation of the carbon dioxide gas laser AL to the irradiation site of the ultraviolet laser ML together with the main irradiation of the ultraviolet laser ML.
The region including the L irradiation region is locally heated, and the energy shortage due to the irradiation of the ultraviolet laser ML is reduced by the carbon dioxide laser A.
The debris (scattered matter) generated by etching by the irradiation of the ultraviolet laser ML is prevented from reattaching, and the transparency of the processing surface 2 can be ensured.
【００１９】以下では、紫外線レーザＭＬとしてＡｒＦ
エキシマレーザを、アシストレーザとして低出力（例え
ば１０〜４０ｍＪ／ｃｍ2 ）の小型炭酸ガスレーザを使
用し、基板にアクリル樹脂を用いて大きさ３ｍｍ角の平
凸シリンドリカルレンズを試作した。尚、前述したアク
リル樹脂以外に、ポリカーボネートやポリオリフィン樹
脂など有機高分子でも同様の効果が得られる。In the following, ArF is used as the ultraviolet laser ML.
A low-output (for example, 10 to 40 mJ / cm 2 ) carbon dioxide laser was used as an excimer laser as an assist laser, and a plano-convex cylindrical lens having a size of 3 mm square was prototyped using an acrylic resin as a substrate. Note that, besides the acrylic resin described above, the same effect can be obtained by using an organic polymer such as polycarbonate or polyolefin resin.
【００２０】図２（ａ）は紫外線レーザＭＬと炭酸ガス
レーザＡＬとを併用した加工時における被加工面２の形
状プロファイルを示し、同図（ｂ）は紫外線レーザＭＬ
のみを使用した加工時における被加工面２の形状プロフ
ァイルを示す。この両者を比較してみると、紫外線レー
ザＭＬのみを使用した加工〔同図（ｂ）参照〕ではその
被加工面２が荒れて良好な面加工が困難であるのに対し
て、紫外線レーザＭＬと炭酸ガスレーザＡＬとを併用し
た加工〔同図（ａ）参照〕ではスムーズな被加工面２が
得られて良好な面加工が実現できる。FIG. 2A shows a shape profile of the surface 2 to be machined during the processing using both the ultraviolet laser ML and the carbon dioxide gas laser AL, and FIG. 2B shows the ultraviolet laser ML.
4 shows a shape profile of the surface to be processed 2 at the time of processing using only one. Comparing the two, the processing using only the ultraviolet laser ML (see FIG. 3B) makes it difficult to perform good surface processing because the processed surface 2 is rough, whereas the processing using the ultraviolet laser ML is difficult. In the processing using both the laser beam and the carbon dioxide laser AL (see FIG. 3A), a smooth surface 2 to be processed can be obtained, and good surface processing can be realized.
【００２１】また、図３（ａ）は紫外線レーザＭＬと炭
酸ガスレーザＡＬとを併用した加工時における被加工面
２の形状プロファイルを示し、同図（ｂ）は紫外線レー
ザＭＬのみを使用した加工時における被加工面２の形状
プロファイルを示す。但し、両者はガラスの被加工面２
を定点で穴加工した場合を示し、この両者を比較してみ
ると、紫外線レーザＭＬのみを使用した加工〔同図
（ｂ）参照〕ではデブリス（飛散物）が再付着して穴周
辺に盛り上がり（図中ｍ部分）ができて良好な穴加工が
困難であるのに対して、紫外線レーザＭＬと炭酸ガスレ
ーザＡＬとを併用した加工〔同図（ａ）参照〕では穴周
辺の盛り上がりがなくて良好な穴加工が実現できる。FIG. 3A shows a shape profile of the surface 2 to be machined at the time of machining using both the ultraviolet laser ML and the carbon dioxide gas laser AL. FIG. 3B shows the shape profile at the time of machining using only the ultraviolet laser ML. 5 shows a shape profile of the surface 2 to be processed. However, both are glass processing surfaces 2
Shows a case where a hole is drilled at a fixed point, and when comparing the two, when processing using only the ultraviolet laser ML [see FIG. 3 (b)], debris (scattered matter) is reattached and rises around the hole. (M portion in the figure) is formed and it is difficult to perform good hole processing. On the other hand, in the processing using both the ultraviolet laser ML and the carbon dioxide gas laser [see FIG. Good hole drilling can be realized.
【００２２】ここで、本発明では炭酸ガスレーザＡＬを
併用することにより、その炭酸ガスレーザＡＬにより被
加工面２を局部的に加熱するようにしている。これに対
して、図４は加工対象物１の全体を軟化点以下（加熱温
度８０℃）で加熱した場合における被加工面２の形状プ
ロファイルを示すが、この場合には被加工面２を全体的
に加熱するために炭酸ガスレーザＡＬを併用した場合と
比較して被加工面２の荒れを防止する大きな効果を得る
ことが困難であって好適ではない。Here, in the present invention, by using the carbon dioxide gas laser AL together, the work surface 2 is locally heated by the carbon dioxide gas laser AL. On the other hand, FIG. 4 shows a shape profile of the processing surface 2 when the entire processing target 1 is heated below the softening point (heating temperature of 80 ° C.). It is difficult to obtain a large effect of preventing the roughness of the work surface 2 as compared with the case where the carbon dioxide gas laser AL is also used for simultaneous heating, which is not preferable.
【００２３】尚、精密加工用レーザ装置などで使用さ
れ、均等なレーザを集光させるための光学レンズのレン
ズ面を被加工面２としてレーザ加工するに際しては、被
加工面２の透過波面又は反射波面をモニタリングしなが
ら、そのモニタリング情報に基づいて被加工面２を紫外
線レーザＭＬ及び炭酸ガスレーザＡＬの照射により非接
触でエッチングして最適な透過波面又は反射波面となる
形状に加工すれば、最適な透過波面又は反射波面をリア
ルタイムで目標設定することができる点で好適である。When laser processing is performed on the lens surface of an optical lens used for a precision processing laser device or the like to collect a uniform laser beam as the processing surface 2, the transmitted wavefront or reflection of the processing surface 2 is used. While monitoring the wavefront, based on the monitoring information, the surface to be processed 2 is etched in a non-contact manner by irradiation of the ultraviolet laser ML and the carbon dioxide gas laser AL so as to be processed into a shape having an optimal transmitted wavefront or a reflected wavefront. This is advantageous in that a transmitted wavefront or a reflected wavefront can be targeted in real time.
【００２４】この被加工面２をモニタリングするために
は被加工面２と対向させて干渉計を配置する。この干渉
計は制御器６に接続され、例えば赤色光〔６３３ｎｍ〕
又は緑色光〔５４３ｎｍ〕のＨｅ−Ｎｅレーザ等の光源
を含む光学系及びＣＣＤカメラを具備し、光源から発せ
られた測定レーザを被加工面２で透過又は反射させて干
渉計に内蔵している平面参照板からの反射光と干渉させ
てＣＣＤカメラで撮像する。このＣＣＤカメラからの撮
像信号を制御器６で画像処理し、被加工面２での透過波
面又は反射波面をモニタリングする。このモニタリング
は、制御器６のディスプレイ装置に画面表示することが
可能である。In order to monitor the work surface 2, an interferometer is arranged so as to face the work surface 2. This interferometer is connected to the controller 6 and, for example, red light [633 nm]
Alternatively, an optical system including a light source such as a He-Ne laser of green light [543 nm] and a CCD camera are provided, and a measurement laser emitted from the light source is transmitted or reflected by the surface to be processed 2 and is built in the interferometer. An image is taken with a CCD camera by making it interfere with light reflected from a plane reference plate. The imaging signal from the CCD camera is image-processed by the controller 6, and the transmitted wavefront or the reflected wavefront on the processing surface 2 is monitored. This monitoring can be displayed on a screen of the display device of the controller 6.
【００２５】以上の実施形態では、加工対象物１をＸＹ
ステージ５上に載置してその加工対象物１を移動させる
ようにしたが、本発明はこれに限定されることなく、加
工対象物１を固定した状態で反射ミラー９，１０を移動
させて紫外線レーザＭＬ及び炭酸ガスレーザＡＬを走査
するようにしてもよい。更に、本発明は、精密加工用レ
ーザ装置などで使用され、均等なレーザを集光させるた
めの光学レンズ以外の各種の光学レンズに適用可能であ
るのは勿論である。In the above embodiment, the object 1 is XY
Although the processing object 1 is moved by being placed on the stage 5, the present invention is not limited to this, and the reflection mirrors 9 and 10 are moved while the processing object 1 is fixed. The scanning may be performed by the ultraviolet laser ML and the carbon dioxide laser AL. Further, the present invention can be applied to various optical lenses other than the optical lens for condensing a uniform laser, which is used in a precision processing laser device or the like.
【００２６】[0026]
【発明の効果】本発明によれば、短波長の紫外線レーザ
等のメインレーザを照射することにより加工対象物の被
加工面をエッチングし、そのメインレーザの照射と共に
長波長の炭酸ガスレーザ等のアシストレーザを照射する
ことによりメインレーザの照射部位を局部的に加熱する
ようにしたから、メインレーザによる被加工面のエッチ
ング量が大きくなっても、アシストレーザによる補足で
もってデブリスの再付着を抑制することができて被加工
面での透明性などの点で良好な加工が実現でき、高品質
の加工対象物を製作することができる。According to the present invention, the surface to be processed of the object to be processed is etched by irradiating a main laser such as a short-wavelength ultraviolet laser, and assisted by a long-wavelength carbon dioxide gas laser or the like together with the irradiation of the main laser. By irradiating the laser, the irradiation area of the main laser is locally heated, so even if the amount of etching of the processing surface by the main laser becomes large, the debris re-adhesion is suppressed by supplementing with the assist laser. As a result, good processing can be realized in terms of transparency and the like on the surface to be processed, and a high-quality processing object can be manufactured.
【図１】本発明の実施形態におけるレーザアシストによ
る加工装置を示す概略構成図FIG. 1 is a schematic configuration diagram showing a laser assisted processing apparatus according to an embodiment of the present invention.
【図２】（ａ）は紫外線レーザと炭酸ガスレーザとを併
用してアクリル樹脂をコーティングした被加工面を加工
した時の形状プロファイルを示す特性図 （ｂ）は紫外線レーザのみを使用してアクリル樹脂をコ
ーティングした被加工面を加工した時の形状プロファイ
ルを示す特性図FIG. 2A is a characteristic diagram showing a shape profile when an acrylic resin-coated surface is processed by using both an ultraviolet laser and a carbon dioxide gas laser. FIG. 2B is an acrylic resin using only an ultraviolet laser. Diagram showing the shape profile when processing the work surface coated with
【図３】（ａ）は紫外線レーザと炭酸ガスレーザとを併
用してガラスの被加工面を穴加工した時の形状プロファ
イルを示す特性図 （ｂ）は紫外線レーザのみを使用してガラスの被加工面
を穴加工した時の形状プロファイルを示す特性図FIG. 3 (a) is a characteristic diagram showing a shape profile when a hole is formed in a surface to be processed of glass by using both an ultraviolet laser and a carbon dioxide laser, and FIG. 3 (b) is a diagram showing processing of glass using only an ultraviolet laser. Characteristic diagram showing the shape profile when the surface is drilled
【図４】加工対象物を軟化点以下（加熱温度８０℃）で
加熱した場合における被加工面の形状プロファイルを示
す特性図FIG. 4 is a characteristic diagram showing a shape profile of a surface to be processed when the object to be processed is heated below a softening point (heating temperature: 80 ° C.).
１ 加工対象物 ２ 被加工面 ３ 第１のレーザ発振器 ４ 第２のレーザ発振器 ５ 駆動機構（ＸＹテーブル） ６ 制御器 ＭＬ メインレーザ（紫外線レーザ） ＡＬ アシストレーザ（炭酸ガスレーザ） DESCRIPTION OF SYMBOLS 1 Processing object 2 Work surface 3 1st laser oscillator 4 2nd laser oscillator 5 Drive mechanism (XY table) 6 Controller ML Main laser (ultraviolet laser) AL Assist laser (carbon dioxide laser)
Claims (3)
照射して前記被加工面をエッチングする第１のレーザ発
振器と、前記メインレーザの照射部位にアシストレーザ
を照射して前記メインレーザの照射部位を含む部位を局
部的に加熱する第２のレーザ発振器と、前記メインレー
ザの照射とアシストレーザの照射を最適制御すると共
に、前記メインレーザ及びアシストレーザと加工対象物
とを相対的に移動させる駆動機構を位置制御する制御器
とを具備したことを特徴とするレーザアシストによる加
工装置。A first laser oscillator for irradiating a main laser on a surface to be processed of the object to be processed to etch the surface to be processed, and an assist laser for irradiating a part irradiated with the main laser with the main laser. A second laser oscillator for locally heating a portion including an irradiation portion; and optimally controlling the main laser irradiation and the assist laser irradiation, and relatively moving the main laser, the assist laser, and the workpiece. And a controller for controlling a position of a driving mechanism to be driven.
レーザ、アシストレーザとして長波長の炭酸ガスレーザ
をそれぞれ使用したことを特徴とする請求項１記載のレ
ーザアシストによる加工装置。2. The laser assisted processing apparatus according to claim 1, wherein a short wavelength ultraviolet laser is used as the main laser, and a long wavelength carbon dioxide laser is used as the assist laser.
ガラスからなる母体の表面に光学素子用樹脂をコーティ
ングした光学面、又は、光学ガラス又は石英ガラスから
なる母体の光学面であり、前記光学面を最適な透過波面
又は反射波面となる形状に加工することを特徴とするレ
ーザアシストによる加工装置。3. The surface to be processed according to claim 1, wherein the surface of the base made of optical glass is an optical surface coated with a resin for an optical element, or the base is made of optical glass or quartz glass. A laser-assisted processing apparatus for processing the optical surface into a shape that becomes an optimal transmitted wavefront or reflected wavefront.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13706097A JP3944615B2 (en) | 1997-05-27 | 1997-05-27 | Laser-assisted processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13706097A JP3944615B2 (en) | 1997-05-27 | 1997-05-27 | Laser-assisted processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10323773A true JPH10323773A (en) | 1998-12-08 |
| JP3944615B2 JP3944615B2 (en) | 2007-07-11 |
Family
ID=15189962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13706097A Expired - Fee Related JP3944615B2 (en) | 1997-05-27 | 1997-05-27 | Laser-assisted processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3944615B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005313475A (en) * | 2004-04-28 | 2005-11-10 | Sumitomo Electric Ind Ltd | Resin processing method and resin processing apparatus |
| CN104384718A (en) * | 2014-11-25 | 2015-03-04 | 北京航星机器制造有限公司 | Double beam pulse laser welding method for Ti2A1Nb-based intermetallic compound |
| CN106312314A (en) * | 2016-11-16 | 2017-01-11 | 南京先进激光技术研究院 | Double laser beam welding system and method |
| CN111069786A (en) * | 2019-12-31 | 2020-04-28 | 武汉大学 | Laser grooving device and method |
-
1997
- 1997-05-27 JP JP13706097A patent/JP3944615B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005313475A (en) * | 2004-04-28 | 2005-11-10 | Sumitomo Electric Ind Ltd | Resin processing method and resin processing apparatus |
| JP4595378B2 (en) * | 2004-04-28 | 2010-12-08 | 住友電気工業株式会社 | Resin processing method |
| CN104384718A (en) * | 2014-11-25 | 2015-03-04 | 北京航星机器制造有限公司 | Double beam pulse laser welding method for Ti2A1Nb-based intermetallic compound |
| CN106312314A (en) * | 2016-11-16 | 2017-01-11 | 南京先进激光技术研究院 | Double laser beam welding system and method |
| CN111069786A (en) * | 2019-12-31 | 2020-04-28 | 武汉大学 | Laser grooving device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3944615B2 (en) | 2007-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3001816B2 (en) | Laser scribing on glass using Nd: YAG laser | |
| KR100626554B1 (en) | Device for Cutting Glass Substrate in Manufacturing Process of Flat Type Display and Method for controlling depth of cutting for the Glass Substrate | |
| JP3036906B2 (en) | Glass processing method and apparatus | |
| JP4835927B2 (en) | Method of splitting hard and brittle plate | |
| US6292609B1 (en) | Optical components including an optical element having a surface that is tapered | |
| EP0577260A2 (en) | A defect compensation method for smoothing a surface of a transparent plate | |
| JP2006145810A (en) | Automatic focusing apparatus, laser beam machining apparatus and laser beam cutter | |
| JP2005066629A (en) | Joint method of transparent material with ultrashort light pulse, material joint device, and joint material | |
| WO2018097018A1 (en) | Laser processing device and laser processing method | |
| JP2006007619A (en) | Laser machining method and device | |
| JP3533600B2 (en) | Intaglio, intaglio production method and apparatus | |
| US20090316127A1 (en) | Substrate, and method and apparatus for producing the same | |
| JP2008155269A (en) | Dividing method for substrate, and method of manufacturing laser scribing apparatus and electro-optical apparatus | |
| JP3944615B2 (en) | Laser-assisted processing equipment | |
| KR20080093321A (en) | Laser beam machining system and method for cutting of substrate using the same | |
| JP2003001458A (en) | Laser beam machining method | |
| JP2002307176A (en) | Micro machining device | |
| JP2007301672A (en) | Working method and device of transparent material | |
| KR100660111B1 (en) | LASER machining apparatus including optical sensor unit and beam controller | |
| JP2003001457A (en) | Laser beam machining method | |
| KR100862522B1 (en) | Laser beam machining system and method for cutting of substrate using the same | |
| JPH11314184A (en) | Optical device machining apparatus | |
| JPH09253879A (en) | Method and device for splitting brittle substrate by laser beam | |
| JPH10323790A (en) | Laser processing device | |
| JP3085875B2 (en) | Optical surface forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 19970625 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20031031 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20040210 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040526 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040526 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050307 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20050307 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060720 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060802 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060929 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070223 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070326 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100420 Year of fee payment: 3 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100420 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110420 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110420 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120420 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120420 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130420 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130420 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140420 Year of fee payment: 7 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |