JPH1032291A - Heat dissipating device and method for semiconductor device - Google Patents
Heat dissipating device and method for semiconductor deviceInfo
- Publication number
- JPH1032291A JPH1032291A JP8187058A JP18705896A JPH1032291A JP H1032291 A JPH1032291 A JP H1032291A JP 8187058 A JP8187058 A JP 8187058A JP 18705896 A JP18705896 A JP 18705896A JP H1032291 A JPH1032291 A JP H1032291A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- heat
- lsi
- heat dissipating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3421—Leaded components
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板に搭載された
半導体装置、特に、ＬＳＩの放熱装置及びその放熱方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounted on a substrate, and more particularly to a heat dissipation device for an LSI and a heat dissipation method therefor.
【０００２】[0002]
【従来の技術】従来、このような分野の技術としては、
次に示すようなものがあった。図６はかかる従来の放熱
フィンを有するＬＳＩの斜視図である。この図に示すよ
うに、ＬＳＩの放熱を行うためには、ＬＳＩ１の上部表
面に放熱フィン２を接着し、ＬＳＩ１の表面の熱を外部
に放出させるようにしていた。なお、１ａは外部リード
である。2. Description of the Related Art Conventionally, techniques in such a field include:
There were the following. FIG. 6 is a perspective view of an LSI having such a conventional heat radiation fin. As shown in this figure, in order to radiate the heat of the LSI, a heat radiating fin 2 is bonded to the upper surface of the LSI 1 so that the heat of the surface of the LSI 1 is radiated to the outside. 1a is an external lead.
【０００３】また、ＬＳＩが搭載された場合には、その
搭載基板のＬＳＩの搭載側から専ら放熱されるようにな
っていた。When an LSI is mounted, heat is radiated exclusively from the LSI mounting side of the mounting substrate.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら上記した
従来のＬＳＩの放熱方法では、ＬＳＩの上部表面の放熱
のみ効果があり、ＬＳＩ底面部に蓄積された熱は、放熱
の面からは考慮されていない状態であった。また、図７
に示すように、ＬＳＩを搭載した基板３は、常に水平に
配置されるものではなく、装置内では、垂直に配置され
たりするため、ＬＳＩ１の上部、底面ともに同様な温度
上昇となっており、上部表面からだけでは十分な放熱効
果を得られないといった問題があった。However, in the above-described conventional heat dissipation method for an LSI, only the heat dissipation from the upper surface of the LSI is effective, and the heat accumulated in the bottom surface of the LSI is not considered from the heat dissipation aspect. Condition. FIG.
As shown in FIG. 2, the substrate 3 on which the LSI is mounted is not always arranged horizontally, but is arranged vertically in the device. There was a problem that a sufficient heat radiation effect could not be obtained only from the upper surface.
【０００５】更に、従来の放熱フィンは、ある程度の高
さがあるため、基板の収納間隔が狭い装置では適用でき
ない場合もある。本発明は、上記問題点を除去し、半導
体装置の放熱効果を向上させることができるとともに、
放熱フィンによる半導体装置の高さ寸法の増大がなく、
コンパクトな半導体装置の放熱装置及びその放熱方法を
提供することを目的とする。Further, since the conventional radiating fin has a certain height, it may not be applicable to an apparatus in which the space between the substrates is narrow. The present invention eliminates the above problems, and can improve the heat radiation effect of the semiconductor device.
There is no increase in the height of the semiconductor device due to the radiation fins,
An object of the present invention is to provide a compact heat dissipation device for a semiconductor device and a heat dissipation method therefor.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 （１）半導体装置の放熱装置において、半導体装置が搭
載される基板の、前記半導体装置が配置される部分に形
成される穴と、この穴に嵌め込まれる放熱フィンとを備
え、前記半導体装置の裏面に前記放熱フィンのヘッド部
が接触し、前記放熱フィンの脚部の先端が前記基板の裏
面に露出し、この露出部を含む領域にハンダが形成され
るようにしたものである。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides: (1) a heat radiating device for a semiconductor device, which is formed on a portion of a substrate on which the semiconductor device is mounted, where the semiconductor device is arranged; And a heat dissipating fin fitted in the hole, the head of the heat dissipating fin comes into contact with the back surface of the semiconductor device, and the tips of the legs of the heat dissipating fin are exposed on the back surface of the substrate. The solder is formed in a region including the exposed portion.
【０００７】したがって、従来考慮されていなかった半
導体装置の底面部に蓄積された熱をも、放熱フィンを通
じて基板の裏側からも放熱させることができ、しかも、
半導体装置の高さ寸法の増大もなく、コンパクトな半導
体装置の放熱装置を提供することができる。 （２）半導体装置の放熱方法において、半導体装置が搭
載される基板の前記半導体装置が配置される部分に穴が
形成され、この穴に放熱フィンを嵌め込み、前記半導体
装置の裏面に前記放熱フィンのヘッド部が接触し、前記
放熱フィンの脚部の先端が前記基板の裏面に露出し、こ
の露出部を含む領域にハンダが形成され、前記半導体装
置の表面と裏面の両側から放熱を行うようにしたもので
ある。このように、基板上に搭載された半導体装置は、
その上部表面からの放熱とともに、従来考慮されていな
かった半導体装置の底面部に蓄積された熱をも、放熱フ
ィンを通じて、基板の裏面側の放熱フィン及びハンダ領
域から放熱面積を拡大して放熱することができる。ま
た、半導体装置の表面と裏面からバランスよく放熱する
ことができるとともに、放熱効果を高めることができ
る。Therefore, heat accumulated on the bottom surface of the semiconductor device, which has not been considered in the past, can be radiated from the back side of the substrate through the radiating fins.
A compact heat dissipation device for a semiconductor device can be provided without increasing the height of the semiconductor device. (2) In the heat dissipation method for a semiconductor device, a hole is formed in a portion of the substrate on which the semiconductor device is mounted, where the semiconductor device is arranged, and a heat dissipation fin is fitted into the hole, and the heat dissipation fin is provided on the back surface of the semiconductor device. The head portion comes into contact, the tips of the legs of the heat radiation fins are exposed on the back surface of the substrate, solder is formed in a region including the exposed portion, and heat is radiated from both the front surface and the back surface of the semiconductor device. It was done. Thus, the semiconductor device mounted on the substrate is
Along with the heat radiation from the upper surface, the heat accumulated on the bottom surface of the semiconductor device, which has not been considered in the past, is also dissipated through the heat radiation fins from the heat radiation fins and the solder region on the back surface side of the substrate by expanding the heat radiation area. be able to. In addition, heat can be radiated from the front and back surfaces of the semiconductor device in a well-balanced manner, and the heat radiation effect can be enhanced.
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を用いて詳細に説明する。図１は本発明の実施例
を示すＬＳＩへの放熱フィンの取り付け方法を示す斜視
図、図２はＬＳＩを取り付ける基板部分の裏面図、図３
はその放熱フィンの構造を示す図であり、図３（ａ）は
その放熱フィンの上面図、図３（ｂ）はその放熱フィン
の下面図、図３（ｃ）はその放熱フィンの側面図、図３
（ｄ）はその放熱フィンの斜視図である。図４はその放
熱フィンを有するＬＳＩを実装した状態を示す側面図、
図５は図４のＡ部の拡大図である。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a perspective view showing a method of attaching a heat radiation fin to an LSI showing an embodiment of the present invention, FIG. 2 is a rear view of a substrate portion on which the LSI is attached, and FIG.
3A and 3B are views showing the structure of the heat radiation fin, FIG. 3A is a top view of the heat radiation fin, FIG. 3B is a bottom view of the heat radiation fin, and FIG. 3C is a side view of the heat radiation fin. , FIG.
(D) is a perspective view of the radiation fin. FIG. 4 is a side view showing a state where the LSI having the heat radiation fins is mounted.
FIG. 5 is an enlarged view of a portion A in FIG.
【０００９】図１に示すように、ＬＳＩ２１が搭載され
る基板１１のＬＳＩ２１が配置される部分のＬＳＩ２１
の中心部が位置する箇所に穴１２を開け、放熱フィン３
１をはめ込み、その上からＬＳＩ２１を取り付ける。Ｌ
ＳＩ２１と放熱フィン３１の間隔は、ＬＳＩ２１の熱が
放熱フィン３１に吸収され易いように、隙間のないよう
に密着させる。なお、２２は外部リードである。As shown in FIG. 1, a portion of the substrate 11 on which the LSI 21 is mounted
A hole 12 is formed at the position where the center of the
1 and the LSI 21 is mounted thereon. L
The gap between the SI 21 and the heat radiation fins 31 is closely contacted without any gap so that the heat of the LSI 21 is easily absorbed by the heat radiation fins 31. Reference numeral 22 denotes an external lead.
【００１０】ここで、図３に示すように、放熱フィン３
１は、円板状のヘッド部３２と、このヘッド部３２と一
体に形成される円柱状の脚部３３とからなる。また、図
２に示すように、ＬＳＩを取り付ける基板１１部分の裏
面は、ハンダ領域１３を生成しておき、図４及び図５に
示すように、放熱フィン３１の円柱状の脚部３３を基板
１１に嵌め込み、ＬＳＩ２１を取り付けた後、ハンダ層
（図示なし）にて放熱フィン３１の円柱状の脚部３３の
先端部をハンダ３４によりハンダ付けし、放熱領域を拡
大させる。なお、図２において、ＬはＬＳＩ２１の寸法
を示している。[0010] Here, as shown in FIG.
1 comprises a disk-shaped head portion 32 and a columnar leg portion 33 formed integrally with the head portion 32. Further, as shown in FIG. 2, a solder region 13 is formed on the back surface of the portion of the substrate 11 on which the LSI is mounted, and as shown in FIGS. After the LSI 21 is mounted thereon, the tip of the cylindrical leg 33 of the heat radiation fin 31 is soldered with a solder 34 with a solder layer (not shown) to enlarge the heat radiation area. In FIG. 2, L indicates the size of the LSI 21.
【００１１】以下、本発明のＬＳＩのフィンによる放熱
方法について説明する。図４及び図５に示すように、Ｌ
ＳＩ２１が基板１１に搭載されると、ＬＳＩ２１からの
熱を放熱フィン３１の円板状のヘッド部３２上側にて吸
収し、基板１１の裏側で、放熱フィン３１の円柱状の脚
部３３とハンダ領域１３にて放熱させることができる。Hereinafter, a method of radiating heat by fins of an LSI according to the present invention will be described. As shown in FIGS. 4 and 5, L
When the SI 21 is mounted on the substrate 11, the heat from the LSI 21 is absorbed by the upper side of the disk-shaped head portion 32 of the radiating fin 31, and the columnar leg 33 of the radiating fin 31 and the solder are The heat can be dissipated in the region 13.
【００１２】このように、本発明によれば、基板上に搭
載されたＬＳＩは、その上部表面からの放熱と共に、従
来考慮されていなかったＬＳＩの底面部に蓄積された熱
をも放熱フィンを通じて、基板の裏面側の放熱フィン及
びハンダ領域からも含めて放熱させることができ、放熱
効果を高めることができる。また、その放熱フィンで
は、ＬＳＩの高さが目立たないため、従来のＬＳＩの上
面に取り付けられる放熱フィンのような適用制限が生じ
るという問題は発生しない。As described above, according to the present invention, the LSI mounted on the substrate not only dissipates heat from the upper surface but also dissipates heat accumulated on the bottom surface of the LSI through the heat dissipating fins. In addition, heat can be radiated from the radiating fins and the solder region on the back surface side of the substrate, and the radiating effect can be enhanced. In addition, since the height of the LSI is not conspicuous in the heat radiation fins, there is no problem that the application limit is limited as in the case of the conventional heat radiation fin mounted on the upper surface of the LSI.
【００１３】なお、上記実施例においては、ＬＳＩの搭
載について述べたが、これに限定するものではなく、種
々の放熱を要する半導体装置に適用することができる。
特に、高密度に集積される半導体装置の放熱は重要であ
り、その対策としての本発明のもたらす効果は著大であ
る。また、本発明は上記実施例に限定されるものではな
く、本発明の趣旨に基づいて種々の変形が可能であり、
これらを本発明の範囲から排除するものではない。In the above embodiment, the mounting of the LSI has been described. However, the present invention is not limited to this, and the present invention can be applied to a semiconductor device requiring various heat radiation.
In particular, heat dissipation of a semiconductor device integrated at high density is important, and the effect of the present invention as a countermeasure is remarkable. Further, the present invention is not limited to the above embodiments, and various modifications are possible based on the gist of the present invention.
They are not excluded from the scope of the present invention.
【００１４】[0014]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）請求項１記載の発明によれば、従来考慮されてい
なかった半導体装置の底面部に蓄積された熱をも、放熱
フィンを通じて基板の裏側からも放熱させることがで
き、しかも半導体装置の高さ寸法の増大もなく、コンパ
クトな半導体装置の放熱装置を提供することができる。As described above, according to the present invention, the following effects can be obtained. (1) According to the first aspect of the present invention, heat accumulated on the bottom surface of the semiconductor device, which has not been considered in the past, can be radiated from the back side of the substrate through the radiation fins. A compact heat dissipation device for a semiconductor device can be provided without an increase in height.
【００１５】（２）請求項２記載の発明によれば、基板
上に搭載された半導体装置は、その上部表面からの放熱
と共に、従来考慮されていなかった半導体装置の底面部
に蓄積された熱をも放熱フィンを通じて、基板の裏面側
の放熱フィン及びハンダ領域から放熱面積を拡大して放
熱することができる。また、半導体装置の表面と裏面か
らバランスよく放熱することができるとともに、放熱効
果を高めることができる。(2) According to the second aspect of the present invention, the semiconductor device mounted on the substrate has the heat accumulated on the bottom surface of the semiconductor device, which has not been considered in the past, together with the heat radiation from the upper surface. Also, through the heat radiation fins, heat can be radiated from the heat radiation fins and the solder region on the back surface side of the substrate by expanding the heat radiation area. In addition, heat can be radiated from the front and back surfaces of the semiconductor device in a well-balanced manner, and the heat radiation effect can be enhanced.
【図１】本発明の実施例を示すＬＳＩへの放熱フィンの
取り付け方法を示す斜視図である。FIG. 1 is a perspective view illustrating a method of attaching a heat radiation fin to an LSI according to an embodiment of the present invention.
【図２】本発明の実施例を示すＬＳＩを取り付ける基板
部分の裏面図である。FIG. 2 is a rear view of a substrate portion on which an LSI according to an embodiment of the present invention is mounted.
【図３】本発明の実施例を示す放熱フィンの構造を示す
図である。FIG. 3 is a view showing a structure of a heat radiation fin showing an embodiment of the present invention.
【図４】本発明の実施例を示す放熱フィンを有するＬＳ
Ｉを実装した状態を示す側面図である。FIG. 4 shows an LS having a radiation fin showing an embodiment of the present invention.
It is a side view which shows the state which mounted I.
【図５】図４のＡ部の拡大図である。FIG. 5 is an enlarged view of a portion A in FIG. 4;
【図６】従来の放熱フィンを有するＬＳＩの斜視図であ
る。FIG. 6 is a perspective view of a conventional LSI having a radiation fin.
【図７】ＬＳＩを搭載した基板の配置例を示す図であ
る。FIG. 7 is a diagram illustrating an example of an arrangement of a substrate on which an LSI is mounted.
１１ 基板 １２ 穴 １３ ハンダ領域 ２１ ＬＳＩ ２２ 外部リード ３１ 放熱フィン ３２ 円板状のヘッド部 ３３ 円柱状の脚部 ３４ ハンダ DESCRIPTION OF SYMBOLS 11 Substrate 12 Hole 13 Solder area 21 LSI 22 External lead 31 Heat radiation fin 32 Disk-shaped head part 33 Column-shaped leg part 34 Solder
Claims (2)
半導体装置が配置される部分に形成される穴と、（ｂ）
該穴に嵌め込まれる放熱フィンとを備え、（ｃ）前記半
導体装置の裏面に前記放熱フィンのヘッド部が接触し、
前記放熱フィンの脚部の先端が前記基板の裏面に露出
し、該露出部を含む領域にハンダが形成されることを特
徴とする半導体装置の放熱装置。(A) a hole formed in a portion of a substrate on which the semiconductor device is mounted, on which the semiconductor device is arranged;
A radiation fin fitted into the hole, and (c) a head portion of the radiation fin contacts a back surface of the semiconductor device;
The heat radiating device for a semiconductor device, wherein a tip of a leg portion of the heat radiating fin is exposed on a back surface of the substrate, and solder is formed in a region including the exposed portion.
体装置が配置される部分に穴が形成され、該穴に放熱フ
ィンを嵌め込み、前記半導体装置の裏面に前記放熱フィ
ンのヘッド部が接触し、前記放熱フィンの脚部の先端が
前記基板の裏面に露出し、該露出部を含む領域にハンダ
が形成され、前記半導体装置の表面と裏面の両側から放
熱を行うことを特徴とする半導体装置の放熱方法。2. A hole is formed in a portion of the substrate on which the semiconductor device is mounted on which the semiconductor device is arranged, and a heat radiation fin is fitted into the hole, and a head portion of the heat radiation fin contacts the back surface of the semiconductor device. A tip of a leg portion of the radiation fin is exposed on a back surface of the substrate, solder is formed in a region including the exposed portion, and heat is radiated from both a front surface and a back surface of the semiconductor device. Heat dissipation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8187058A JPH1032291A (en) | 1996-07-17 | 1996-07-17 | Heat dissipating device and method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8187058A JPH1032291A (en) | 1996-07-17 | 1996-07-17 | Heat dissipating device and method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1032291A true JPH1032291A (en) | 1998-02-03 |
Family
ID=16199435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8187058A Withdrawn JPH1032291A (en) | 1996-07-17 | 1996-07-17 | Heat dissipating device and method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1032291A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001022489A2 (en) * | 1999-09-22 | 2001-03-29 | Siemens Aktiengesellschaft | Control device, particularly for use in automotive engineering |
-
1996
- 1996-07-17 JP JP8187058A patent/JPH1032291A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001022489A2 (en) * | 1999-09-22 | 2001-03-29 | Siemens Aktiengesellschaft | Control device, particularly for use in automotive engineering |
| WO2001022489A3 (en) * | 1999-09-22 | 2001-12-20 | Siemens Ag | Control device, particularly for use in automotive engineering |
| EP1427013A3 (en) * | 1999-09-22 | 2004-07-07 | Siemens Aktiengesellschaft | Control device, particularly for use in automotive engineering |
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