JPH10311937A - Packaging structure of end face light emitting element or light receiving element - Google Patents

Packaging structure of end face light emitting element or light receiving element

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Publication number
JPH10311937A
JPH10311937A JP12422497A JP12422497A JPH10311937A JP H10311937 A JPH10311937 A JP H10311937A JP 12422497 A JP12422497 A JP 12422497A JP 12422497 A JP12422497 A JP 12422497A JP H10311937 A JPH10311937 A JP H10311937A
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edge
emitting element
light receiving
receiving element
element
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JP12422497A
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Japanese (ja)
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Hiroki Ishikawa
弘樹 石川
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Japan Aviation Electron Ind Ltd
日本航空電子工業株式会社
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Abstract

PROBLEM TO BE SOLVED: To allow a solder thin film to collide against a metallic film interposed between the thin film and a silicon substrate and to prevent the film from being displaced downward even the solder thin film heated and packaged to the silicon substrate melts by forming metallic films on terminal electrode surfaces. SOLUTION: A V-groove 11 is formed on the surface of the silicon substrate 1 by etching the substrate and the substrate electrodes 12 to be packaged with an end face light emitting element or light receiving element are formed on the silicon substrate 1 surface in correspondence to the V-groove 11. At this time, the terminal electrode 13 is also formed on the silicon substrate 1 surface. Further, the striped metallic film 14 having a specified film thickness are formed on the surface of the substrate electrodes 12 formed in correspondence to the V-groove 11. The striped metallic films 14 are deposited by subjecting the metal of a high m.p. which does not melt in spite of melting of the solder to film thickness control with high accuracy by vapor deposition, sputtering, plating and other thin-film deposition technique. Ni, Cu, Pt and other materials which are wettable with solder and lessen solder leaching are used as the metallic materials.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】この発明は、端面発光素子或は受光素子の実装構造に関し、特に、端面発光素子或は受光素子を基板に対して高さ方向を高精度に実装する端面発光素子或は受光素子の実装構造に関する。 TECHNICAL FIELD The present invention relates to a mounting structure of an edge-emitting element or light receiving element, in particular, some edge emitting devices implementing edge-emitting element or light receiving element in the height direction with high precision with respect to the substrate relates to a mounting structure of the light-receiving element.

【0002】 [0002]

【従来の技術】従来例を図6および図7を参照して説明する。 BACKGROUND ART will be described with reference to FIGS. 6 and 7 a conventional example. 図6および図7において、1は半導体基板であるシリコン基板を示す。 6 and 7, 1 denotes a silicon substrate is a semiconductor substrate. 11はシリコン基板1表面にエッチング加工により形成されたV字状溝11である。 11 is a V-shaped groove 11 formed by etching the silicon substrate 1 surface. 4はV字状溝11に嵌合取り付けられる光ファイバである。 4 is an optical fiber attached fitting into the V-shaped groove 11.
12はV字状溝11に対応してシリコン基板1に形成される基板電極である。 12 is a substrate electrode formed on the silicon substrate 1 in correspondence to the V-shaped groove 11. 2はハンダ薄膜を示す。 2 shows the solder thin film. 3はシリコン基板1に実装されるべき端面発光素子或は受光素子3である。 3 is an end light-emitting element or the light receiving element 3 to be mounted on the silicon substrate 1. 31は端面発光素子或は受光素子3の下面に形成される下側素子電極であり、32は上面に形成される上側素子電極である。 31 is a bottom element electrodes formed on the lower surface of the edge-emitting element or the light receiving element 3, 32 is a upper element electrodes formed on the upper surface.

【0003】端面発光素子或は受光素子3および光ファイバ4をシリコン基板1に実装取り付けて光を放射し或は受光する光学装置を組み立てる順序について簡単に説明するに、先ず、シリコン基板1を準備し、これにエッチング加工を施して表面にV字状溝11を形成する。 [0003] To briefly describe the order in which the edge emitting element or the light receiving element 3 and the optical fiber 4 is attached mounted on the silicon substrate 1 assembled optical device that radiate or receive light, first, preparing a silicon substrate 1 and form a V-shaped groove 11 on the surface this is subjected to etching. 次いで、端面発光素子或は受光素子3を実装する基板電極12をV字状溝11に対応してシリコン基板1表面に形成する。 It is then formed on the silicon substrate 1 surface substrate electrode 12 for mounting the edge-emitting element or the light receiving element 3 corresponding to the V-shaped groove 11. シリコン基板1表面に基板電極12を形成するに際して、端子電極13も同時にシリコン基板1表面に形成しておく。 When forming the substrate electrode 12 on the surface of the silicon substrate 1, the terminal electrodes 13 is also previously formed on the surface of the silicon substrate 1 at the same time. そして、光ファイバ4を接着剤を適用してV字状溝11に嵌合取り付ける。 Then, attach the fitting to the V-shaped groove 11 of the optical fiber 4 by applying the adhesive. ここで、端面発光素子或は受光素子3を準備し、下側素子電極31或は基板電極12の何れか一方にハンダ薄膜2を付与しておき、 Here, to prepare the edge emitting element or the light receiving element 3, leave imparting solder thin film 2 on one of the lower element electrode 31 or the substrate electrode 12,
端面発光素子或は受光素子3を基板電極12に実装する。 The edge-emitting element or the light receiving element 3 mounted on the substrate electrode 12.

【0004】以上の光学装置において、光ファイバ4先端部と端面発光素子或は受光素子3の端面との間をパッシブアライメント、即ち、無調芯固定して両者の間の効率的な光結合を実現するには、光ファイバ4をV字状溝11に嵌合取り付けた状態において、端面発光素子或いは受光素子3をシリコン基板1に形成した基板電極12 [0004] In the above optical device, passive alignment between the optical fiber 4 tip and edge emitting element or the end surface of the light receiving element 3, i.e., an efficient optical coupling between them by non-alignment fixed to achieve, in a state where the optical fiber 4 mounted fitted in a V-shaped groove 11, the substrate to form a edge-emitting element or the light receiving element 3 to the silicon substrate 1 electrode 12
に対して光ファイバ4と高精度に整列して実装することが要請される。 It is requested to implement in alignment with the optical fiber 4 with high accuracy with respect to.

【0005】 [0005]

【発明が解決しようとする課題】端面発光素子或は受光素子3は、以上の通りにして基板電極12に対して位置決めし、シリコン基板1に実装するのであるが、端面発光素子或は受光素子3のシリコン基板1表面の水平方向であるx、z方向に関する位置決め調整は画像処理技術を採用することにより比較的容易に実施することができる。 [SUMMARY OF THE INVENTION] edge emitting element or the light receiving element 3, and positioned with respect to the substrate electrode 12 and as described above, but it is to mount a silicon substrate 1, an edge-emitting element or light receiving element it is a horizontal direction of the silicon substrate 1 of 3 x, positioning adjustment for the z-direction can be relatively easily carried out by employing image processing techniques. フリップ・チップ・ボンダの如き高精度実装機を使用することにより充分に高精度な実装をすることができる。 It is possible to sufficiently high precision implemented by using a flip chip bonder precision mounter such as. しかし、この高精度実装機は端面発光素子或は受光素子3をシリコン基板1表面に実装する場合、実装の高さを加重により制御するものであるので、シリコン基板1の表面の垂直方向であるy方向に関しては、高精度の実装を保証することは困難である。 However, this high-precision mounter when implementing edge-emitting element or the light receiving element 3 on the surface of the silicon substrate 1, since the height of the mounting is to control the weighting is the vertical direction of the surface of the silicon substrate 1 for the y direction, it is difficult to ensure high precision of implementation. と言うのは、ハンダ薄膜2は実装時に加熱溶融するところから、端面発光素子或は受光素子3の高さはハンダ薄膜2の厚さの変動分だけ変化し、高精度の実装高さは得られない。 Is to say, from where the solder film 2 is to be heated and melted at the time of mounting, the height of the edge-emitting element or the light receiving element 3 is changed by variation of the solder film 2 thickness, mounting height of the high-accuracy obtained It is not.

【0006】この発明は、上述の問題を解消した端面発光素子或は受光素子の実装構造を提供するものである。 [0006] The present invention provides a mounting structure for an edge emitting element or light receiving element to solve the above problems.

【0007】 [0007]

【課題を解決するための手段】 In order to solve the problems]

請求項1:光ファイバ4を取り付けるV字状溝11が形成されると共にV字状溝11に対応して端面発光素子或は受光素子3をハンダにより実装する基板電極12が形成される半導体基板1を具備する端面発光素子或は受光素子の実装構造において、基板電極12表面に金属膜1 Claim 1: a semiconductor substrate having a substrate electrode 12 for mounting the edge emitting element or the light receiving element 3 corresponding to the V-shaped grooves 11 with V-shaped grooves 11 for mounting the optical fiber 4 is formed solder is formed in the mounting structure of the edge-emitting element or light receiving element comprising a metal film 1 to the substrate electrode 12 surface
4を形成した端面発光素子或は受光素子の実装構造を構成した。 4 to constitute a mounting structure of the formed edge-emitting element or a light receiving element.

【0008】そして、請求項2:請求項1に記載される端面発光素子或は受光素子の実装構造において、金属膜14は一定膜厚のストライプ状の金属膜である端面発光素子或は受光素子の実装構造を構成した。 [0008] Then, claim 2 in the mounting structure of the edge-emitting element or the light receiving element as claimed in claim 1, the metal film 14 is constant film stripe-shaped metal film having a thickness edge-emitting element or light receiving element mounting structure of you configure. また、請求項3:請求項1に記載される端面発光素子或は受光素子の実装構造において、金属膜14は一定膜厚の円板状の金属膜である端面発光素子或は受光素子の実装構造を構成した。 Further, according to claim 3 in a mounting structure for an edge emitting element or light receiving element as claimed in claim 1, the metal film 14 is mounted in the edge-emitting element or light receiving element is a disc-shaped metal film of constant thickness you configure the structure.

【0009】更に、請求項4:請求項1ないし請求項3 Furthermore, claim 4: claims 1 to 3
に記載される端面発光素子或は受光素子の実装構造において、金属膜14はハンダに濡れ、ハンダ食われの少ない金属材料より成るものである端面発光素子或は受光素子の実装構造を構成した。 In the mounting structure of the edge-emitting element or light receiving element is described, the metal film 14 is wet solder, to constitute a mounting structure of an edge-emitting element or light receiving element in which made less metallic material eaten solder. ここで、請求項5:請求項4に記載される端面発光素子或は受光素子の実装構造において、金属材料はNi、C Here, according to claim 5 in the mounting structure of the edge-emitting element or the light receiving element as claimed in claim 4, the metal material is Ni, C
u、Ptの内から選択された何れかである端面発光素子或は受光素子の実装構造を構成した。 u, to constitute a mounting structure of an edge-emitting element or light receiving element is either selected from among Pt.

【0010】そして、請求項6:請求項1ないし請求項5に記載される端面発光素子或は受光素子の実装構造において、基板電極12側或は端面発光素子或は受光素子3側の何れか一方の側にハンダ薄膜2を予め付与した端面発光素子或は受光素子の実装構造を構成した。 [0010] Then, claim 6 in the mounting structure of the edge-emitting element or the light-receiving element as described in claims 1 to 5, one of the substrate electrode 12 side or edge emitting element or the light receiving element 3 side to constitute a mounting structure of a previously assigned the edge-emitting element or light receiving element solder thin film 2 on one side.

【0011】 [0011]

【発明の実施の形態】この発明の実施の形態を図1ないし図5を参照して説明する。 DETAILED DESCRIPTION OF THE INVENTION be described with reference to FIGS an embodiment of the present invention. 図1を参照するに、端面発光素子或は受光素子3および光ファイバ4をシリコン基板1に実装取り付けて光を放射し或は受光する光学装置を組み立てる順序について簡単に説明するに、先ず、シリコン基板1を準備し、これにエッチング加工を施して表面にV字状溝11を形成する。 Referring to FIG. 1, to briefly describe the sequence of assembling the optical device for emitting light by attaching mounting edge emitting element or the light receiving element 3 and the optical fiber 4 in the silicon substrate 1 or the light-receiving, firstly, silicon providing a substrate 1, to form a V-shaped groove 11 on the surface this is subjected to etching. 次いで、端面発光素子或は受光素子3を実装する基板電極12をV字状溝11 Then, V-shaped grooves 11 of the substrate electrode 12 for mounting the edge-emitting element or the light receiving element 3
に対応してシリコン基板1表面に形成する。 And the corresponding form on the surface of the silicon substrate 1 in. シリコン基板1表面に基板電極12を形成するに際して、端子電極13も同時にシリコン基板1表面に形成しておく。 When forming the substrate electrode 12 on the surface of the silicon substrate 1, the terminal electrodes 13 is also previously formed on the surface of the silicon substrate 1 at the same time. 図2 Figure 2
および図4を参照するに、この発明は、V字状溝11に対応して形成される基板電極12表面に、更に一定膜厚のストライプ状の金属膜14を形成する。 And referring to FIG. 4, the present invention is the substrate electrode 12 surface is formed corresponding to the V-shaped groove 11, is further formed a constant film stripe-shaped metal film 14 having a thickness. このストライプ状の金属膜14は、ハンダが溶融しても溶融しない高融点の金属材料を蒸着、スパッタリング、メッキその他の薄膜成膜技術により高精度に膜厚制御しながら成膜する。 The stripe-shaped metal film 14 is deposited a refractory metal material that solder does not melt even by melting, sputtering, depositing with a film thickness control with high precision by plating other thin film deposition techniques. 金属膜14を形成する金属材料としては、Ni、C The metal material forming the metal film 14, Ni, C
u、Ptその他のハンダに濡れ、ハンダ食われの少ない金属材料を使用する。 u, Pt wetting other solder, using less metal material eaten solder. 金属膜14はこれを図3に示される通りの円板状の金属膜とすることができる。 The metal film 14 may be a disk-shaped metal film as shown in figure 3. そして、 And,
光ファイバ4を接着剤を適用してV字状溝11に嵌合取り付ける。 The optical fiber 4 by applying the adhesive attachment fitted to the V-shaped groove 11. 次いで、端面発光素子或は受光素子3を準備し、下側素子電極31或は基板電極12の何れか一方にハンダ薄膜2を予め付与しておく。 Then, prepare the end face light-emitting element or the light receiving element 3, previously applied solder thin film 2 on one of the lower element electrode 31 or the substrate electrode 12.

【0012】ここで、図5を参照するに、この図は端面発光素子或は受光素子3を加熱し、ハンダ薄膜2を溶融して基板電極12に実装した後の状態を示している。 [0012] Referring now to FIG. 5, this figure shows the state after heating the edge emitting element or the light receiving element 3, is mounted on the substrate electrode 12 to melt the solder film 2. 即ち、ハンダ薄膜2が溶融して端面発光素子或は受光素子3とシリコン基板1との間は溶融後に固化したハンダ薄膜2を介して接合している。 That is, between the edge-emitting element or the light receiving element 3 and the silicon substrate 1 solder thin film 2 is melted is bonded via a solder film 2 was solidified after melting. この場合、ハンダ薄膜2がその溶融により上方に存在する端面発光素子或は受光素子3を下から支持する力を消失しても、基板電極12と端面発光素子或は受光素子3との間に両者間の間隔を保持する金属膜14が介在するところから、金属膜14の一定の厚さを保持した状態で接合がなされるに到る。 In this case, also the edge-emitting element or the light receiving element 3 solder thin film 2 is present above by its melting lost force for supporting from below, between the substrate electrode 12 and the edge-emitting element or the light receiving element 3 from where the metal film 14 which retains the spacing between them is interposed, leading to bonding while maintaining a constant thickness of the metal film 14 is made.

【0013】 [0013]

【発明の効果】以上の通りであって、この発明に依れば、基板電極12表面の一部に端面発光素子或は受光素子3の実装時に加熱されても溶融しない高融点金属を形成しておくことにより、端面発光素子或は受光素子3 Be as evident from the foregoing description, according to the present invention, also forms a refractory metal which does not melt is heated at the time part of the edge-emitting element or the light receiving element 3 mounting the substrate electrode 12 surface by previously, edge-emitting element or the light receiving element 3
は、これをシリコン基板1に加熱実装してハンダ薄膜2 The solder film 2 which is heated mounted on the silicon substrate 1
が溶融しても、シリコン基板1との間に介在する金属膜14に突き当たり、これより下方に変位することは防止される。 There be melt strikes the metal film 14 interposed between the silicon substrate 1, than this be displaced downward is prevented.

【0014】ここで、この金属材料をハンダ薄膜に濡れ、ハンダ食われの少ない金属材料、特に、Ni、C [0014] Here, wetting the metal material to the solder film, less metallic material solder leaching, in particular, Ni, C
u、Ptとすることにより、基板電極12と端面発光素子或は受光素子3との間のハンダ薄膜2が実装時に溶融しても素子3の高さ方向であるy方向の制御に影響は及ばず、良好な実装をすることができる。 u, by the Pt, affect the control of the y-direction solder thin film 2 is the height direction of be melt element 3 during mounting between the substrate electrode 12 and the edge-emitting element or the light receiving element 3 is inferior not, it is possible to good implementation. この端面発光素子或は受光素子3の高さは光ファイバ4のコアと素子3 The edge-emitting element or the height of the light receiving element 3 core and element 3 of the optical fiber 4
の発光部或は受光部の中心とが一致すべく計算設計され、金属膜14の厚さをこの設計に対応して設計することにより高さ方向の精度を制御することができる。 Is the center of the light emitting portion or the light receiving portion of to to calculate design match, the thickness of the metal film 14 can be controlled in the height direction of the accuracy by designing in correspondence with the design.

【0015】更に、端面発光素子或は受光素子3が発熱する場合があるので、放熱に関して考慮する必要があるが、膜14は金属膜であり、合成樹脂或はガラスと比較して熱伝導が良好であるので放熱的に有利である。 Furthermore, there is a case where the edge-emitting element or the light receiving element 3 generates heat, it is necessary to consider with respect to heat radiation, film 14 is a metal film, the thermal conductivity as compared with the synthetic resin or glass a radiator advantageous because it is good.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】実施例を説明する分解斜視図。 Figure 1 is an exploded perspective view for explaining an embodiment.

【図2】実施例の一部を上から視た図。 FIG. 2 is a diagram viewed from the top part of the examples.

【図3】他の実施例の一部を上から視た図。 FIG. 3 is a view seen from above a part of another embodiment.

【図4】図2の実施例の一部の断面図。 [4] partial cross-sectional view of the embodiment of FIG.

【図5】実施例の一部の断面図。 [5] partial sectional view of the embodiment.

【図6】従来例を説明する断面図。 6 is a sectional view illustrating a conventional example.

【図7】従来例の分解斜視図。 Figure 7 is an exploded perspective view of a conventional example.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 シリコン基板 11 V字状溝 12 基板電極 13 端子電極 14 金属膜 2 ハンダ薄膜 3 端面発光素子或は受光素子 31 下側素子電極 32 上側素子電極 4 光ファイバ 1 silicon substrate 11 V-shaped grooves 12 substrate electrode 13 terminal electrode 14 a metal film 2 solder thin film 3 edge emitting element or light receiving element 31 bottom element electrode 32 upper element electrode 4 optical fiber

Claims (6)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 光ファイバを取り付けるV字状溝が形成されると共にV字状溝に対応して端面発光素子或は受光素子をハンダにより実装する基板電極が形成される半導体基板を具備する端面発光素子或は受光素子の実装構造において、 基板電極表面に金属膜を形成したことを特徴とする端面発光素子或は受光素子の実装構造。 1. A end face having a semiconductor substrate having a substrate electrode be implemented by soldering the edge emitting element or light receiving element in response to the V-shaped grooves with V-shaped grooves for mounting the optical fiber is to be formed in the mounting structure of a light emitting element or light receiving element, the mounting structure of the edge-emitting element or light receiving element, characterized in that a metal film is formed on the substrate electrode surface.
  2. 【請求項2】 請求項1に記載される端面発光素子或は受光素子の実装構造において、 金属膜は一定膜厚のストライプ状の金属膜であることを特徴とする端面発光素子或は受光素子の実装構造。 2. A mounting structure of an edge-emitting element or the light receiving element as claimed in claim 1, the metal film is edge-emitting element or light receiving element, characterized in that a constant film stripe-shaped metal film having a thickness mounting structure of.
  3. 【請求項3】 請求項1に記載される端面発光素子或は受光素子の実装構造において、 金属膜は一定膜厚の円板状の金属膜であることを特徴とする端面発光素子或は受光素子の実装構造。 3. A mounting structure of an edge-emitting element or the light receiving element as claimed in claim 1, the metal film is edge-emitting element or light receiving, characterized in that a disc-shaped metal film of constant thickness implementation structure of the element.
  4. 【請求項4】 請求項1ないし請求項3に記載される端面発光素子或は受光素子の実装構造において、 金属膜はハンダに濡れ、ハンダ食われの少ない金属材料より成るものであることを特徴とする端面発光素子或は受光素子の実装構造。 4. A mounting structure of an edge-emitting element or the light-receiving element as described in claims 1 to 3, characterized in that Kinzokumaku wetting to solder, but made of a less metallic material eaten solder mounting structure of an edge-emitting element or the light receiving element to.
  5. 【請求項5】 請求項4に記載される端面発光素子或は受光素子の実装構造において、 金属材料はNi、Cu、Ptの内から選択された何れかであることを特徴とする端面発光素子或は受光素子の実装構造。 5. The mounting structure of the edge-emitting element or the light receiving element as claimed in claim 4, the metal material is Ni, Cu, edge emitting element, characterized in that it is either selected from among Pt or the mounting structure of the light-receiving element.
  6. 【請求項6】 請求項1ないし請求項5に記載される端面発光素子或は受光素子の実装構造において、 基板電極側或は端面発光素子或は受光素子側の何れか一方の側にハンダ薄膜を予め付与したことを特徴とする端面発光素子或は受光素子の実装構造。 6. The mounting structure of the edge-emitting element or the light-receiving element as described in claims 1 to 5, the solder film on one side of the substrate electrode side or edge emitting element or the light-receiving element side mounting structure of an edge-emitting element or light receiving element, characterized in that previously granted.
JP12422497A 1997-05-14 1997-05-14 Packaging structure of end face light emitting element or light receiving element Pending JPH10311937A (en)

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