JPH03227084A - Assembly of semiconductor - Google Patents
Assembly of semiconductorInfo
- Publication number
- JPH03227084A JPH03227084A JP2292890A JP2292890A JPH03227084A JP H03227084 A JPH03227084 A JP H03227084A JP 2292890 A JP2292890 A JP 2292890A JP 2292890 A JP2292890 A JP 2292890A JP H03227084 A JPH03227084 A JP H03227084A
- Authority
- JP
- Japan
- Prior art keywords
- mount
- sub
- laser chip
- laser
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 230000010355 oscillation Effects 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はコンパクトディスク等の光源として用いられ
る半導体レーザの組立方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for assembling a semiconductor laser used as a light source for compact discs and the like.
第8図は従来の半導体レーザ組立方法を示す斜視図で、
図において1,61は直方体の形状?したSl のサグ
マウント、・31ハサブマウント+51上1゜
8゜
にマウントされたレーザチップ、41ハレーザ光の発光
点である。FIG. 8 is a perspective view showing a conventional semiconductor laser assembly method.
In the figure, 1,61 is a rectangular parallelepiped shape? The laser chip is mounted at an angle of 1° to 8° above the S1 sag mount, 31 ha sub mount + 51, and 41 ha is the light emitting point of the laser beam.
次に動作について説明する。レーザチップ31は半田を
供給することによりサブマウントI5)上にグイボンド
される。次いで、レーザチップ(31の上部とサブマウ
ント61の下部間に電圧を印加される。Next, the operation will be explained. The laser chip 31 is firmly bonded onto the submount I5) by supplying solder. Next, a voltage is applied between the upper part of the laser chip (31) and the lower part of the submount 61.
従来の半導体レーザ組立方法は以上のように構成されて
いたので、組立の精度により発光点41の位置精度がサ
ブマウントに対して一義的に定まらないという問題点が
あった。Since the conventional semiconductor laser assembly method was configured as described above, there was a problem in that the positional accuracy of the light emitting point 41 was not uniquely determined with respect to the submount due to the assembly accuracy.
この発明は上記のような問題点を解決する之めになされ
たもので、サブマウントに対してレーザの発光点位置を
一義的に定められる半導体組立方法fzt鰺ること金目
的とする。The present invention has been made to solve the above-mentioned problems, and its object is to provide a semiconductor assembly method in which the position of the laser light emitting point can be uniquely determined with respect to the submount.
この発明に係る半導体組立方法は、サブマウントをレー
ザチップが組立てられる部分のみを凸状に形成し、その
凸状部分とレーザチップの組立面にメタライズ層を施し
、レーザチップをサブマウント凸状部に圧着した後、半
田の融点以上の温度でしばらく保持するようにしたもの
である。In the semiconductor assembly method according to the present invention, the submount is formed into a convex shape only at the part where the laser chip is assembled, a metallized layer is applied to the convex part and the assembly surface of the laser chip, and the laser chip is attached to the convex part of the submount. After the solder is crimped, the solder is held at a temperature above the melting point of the solder for a while.
この発明における半導体組立方法は、半田の融点以上の
温度でしばらく保持することによりその保持している闇
にレーザの発光点がサブマウントに対して一義的に定ま
るように半田の表面張力がレーザチップに作用しレーザ
チップを移動させる。In the semiconductor assembly method of this invention, by holding the solder at a temperature higher than its melting point for a while, the surface tension of the solder is applied to the laser chip so that the laser light emitting point is uniquely determined with respect to the submount. to move the laser chip.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
暮1図において、(31はレーザチップ、l)はレーザ
チップ+31がマウントされる部分のみ2凸状に成型さ
れ之S1サブマウント、(りはレーザチップ(31の組
立面とサブマウントil+の凸状部分のみに癩こされ北
メタライズ層1.4)はレーザの発光点である。In Figure 1, (31 is the laser chip, l) is the part where the laser chip +31 is mounted, and is molded into a two-convex shape. The north metallized layer 1.4), which is erupted only in the shaped part, is the laser emission point.
次に動作について説明する。組立面にメタライズ層+2
1を施こしたレーザチップ13)ヲ、凸状サブマウント
のメタライズ層121を施こした後、半田の融点以上で
しばらく放置した後、冷却する方法でレーザチップ(3
)がサブマウント(1)にダイボンドされる。次いで、
レーザチップ131の上部とサブマウント15)の下部
IK電圧を印加することにより、この間にレーザ発振し
きい電流taえる1[I5!が流れると、発光点)41
よりレーザ光が放射される。Next, the operation will be explained. +2 metallized layers on the assembly surface
After applying the metallized layer 121 of the convex submount, the laser chip 13) was prepared by leaving it at a temperature above the melting point of the solder for a while, and then cooling it.
) is die-bonded to the submount (1). Then,
By applying the IK voltage to the upper part of the laser chip 131 and the lower part of the submount 15), the laser oscillation threshold current ta increases during this time 1[I5! Flows, the light emitting point) 41
More laser light is emitted.
以上のようにこの発明によれば、レーザチップをサブマ
ウント凸状部vc !f着した後、半田の融点以上の温
度でしばらく保持するように構成したので、高温保持中
にレーザの発光点がサブマウントに対して一義的に定ま
るように半田の表面張力がレーザチップに作用し、レー
ザチップを所定の位置に移動される。As described above, according to the present invention, the laser chip is mounted on the submount convex portion vc! After f-bonding, the structure is such that it is held at a temperature above the melting point of the solder for a while, so that the surface tension of the solder acts on the laser chip so that the laser emission point is uniquely determined with respect to the submount while the solder is held at high temperature. Then, the laser chip is moved to a predetermined position.
4゜4゜
−g 1図にこの発明の一実輛例による半導体組立方法
を示す展開斜視図、第2図は従来の半導体組立方法を示
す斜視図である。
11は凸状のサブマウント、41はメタライズ層。
31はレーザチップ、41は発光点を示す。
なお、図中、同一符号に同一 又に柑当邪分を示す。-g FIG. 1 is an exploded perspective view showing a semiconductor assembly method according to an embodiment of the present invention, and FIG. 2 is a perspective view showing a conventional semiconductor assembly method. 11 is a convex submount, and 41 is a metallized layer. 31 is a laser chip, and 41 is a light emitting point. In addition, in the figure, the same reference numerals indicate the same or different parts.
Claims (1)
レーザチップが組立てられる部分のみ凸状に形成し、そ
の凸状部分とレーザチップの組立面にメタライズ層を施
し、前記レーザチップをサブマウント凸状部に圧着した
後、半田の融点以上の温度でしばらく保持することを特
徴とする半導体組立方法。A submount used for die bonding of a semiconductor laser is formed into a convex shape only in the part where the laser chip is assembled, a metallized layer is applied to the convex part and the assembly surface of the laser chip, and the laser chip is crimped to the convex part of the submount. A semiconductor assembly method characterized by holding the solder at a temperature higher than the melting point of the solder for a while.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2292890A JPH03227084A (en) | 1990-01-31 | 1990-01-31 | Assembly of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2292890A JPH03227084A (en) | 1990-01-31 | 1990-01-31 | Assembly of semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03227084A true JPH03227084A (en) | 1991-10-08 |
Family
ID=12096293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2292890A Pending JPH03227084A (en) | 1990-01-31 | 1990-01-31 | Assembly of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03227084A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003344719A (en) * | 2002-05-27 | 2003-12-03 | Toyota Central Res & Dev Lab Inc | Holder for laser light collector, and laser light collector |
CN110034488A (en) * | 2017-12-07 | 2019-07-19 | 朗美通经营有限责任公司 | Transmitter array with the structure being attached for base station |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6046085A (en) * | 1983-08-24 | 1985-03-12 | Nec Corp | Semiconductor laser device |
JPS6118188A (en) * | 1984-07-05 | 1986-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS63132495A (en) * | 1986-11-21 | 1988-06-04 | Mitsubishi Electric Corp | Sub-mount for photo-semiconductor device |
JPH01134983A (en) * | 1987-11-19 | 1989-05-26 | Mitsubishi Electric Corp | Sub-mount for optical semiconductor element |
-
1990
- 1990-01-31 JP JP2292890A patent/JPH03227084A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6046085A (en) * | 1983-08-24 | 1985-03-12 | Nec Corp | Semiconductor laser device |
JPS6118188A (en) * | 1984-07-05 | 1986-01-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
JPS63132495A (en) * | 1986-11-21 | 1988-06-04 | Mitsubishi Electric Corp | Sub-mount for photo-semiconductor device |
JPH01134983A (en) * | 1987-11-19 | 1989-05-26 | Mitsubishi Electric Corp | Sub-mount for optical semiconductor element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003344719A (en) * | 2002-05-27 | 2003-12-03 | Toyota Central Res & Dev Lab Inc | Holder for laser light collector, and laser light collector |
CN110034488A (en) * | 2017-12-07 | 2019-07-19 | 朗美通经营有限责任公司 | Transmitter array with the structure being attached for base station |
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