JPH1031106A - Laser mirror for multiwavelength - Google Patents

Laser mirror for multiwavelength

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Publication number
JPH1031106A
JPH1031106A JP8189011A JP18901196A JPH1031106A JP H1031106 A JPH1031106 A JP H1031106A JP 8189011 A JP8189011 A JP 8189011A JP 18901196 A JP18901196 A JP 18901196A JP H1031106 A JPH1031106 A JP H1031106A
Authority
JP
Japan
Prior art keywords
layers
laser mirror
refractive index
layer
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8189011A
Other languages
Japanese (ja)
Inventor
Shiyunsuke Niizaka
俊輔 新坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8189011A priority Critical patent/JPH1031106A/en
Publication of JPH1031106A publication Critical patent/JPH1031106A/en
Pending legal-status Critical Current

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  • Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a laser mirror having a wider high reflection band than a high reflection band of a normal mirror although the number of layers of the new mirror is almost the same as that of a normal laser mirror and the same material is used for films, by alternately depositing layers in such a manner that these layers include layers having a specified range of optical film thickness and that other layers have specified optical film thickness. SOLUTION: This mirror is produced by alternately depositing high refractive index layers 2 and low refractive index layers 3 on an optical substrate. When λis the designed center wavelength, these alternately deposited layers include at least one layer having the optical film thickness between >=0 and <=0.1λ or between >=0.35λ and <=0.65λ and other layers are formed to have about 0.25λ optical film thickness. For example, the structure of a multiwavelength laser mirror is expressed by 6(HL).2H.6(LH), in which the high refractive index layer 2 is composed of TiO2 and the low refractive index layer 3 is composed of SiO2 . In 25 layers of the laser mirror, the 13th layer has λ/2 optical film thickness while other layers have λ/4 optical film thickness.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の技術分野】本発明はレーザー光学系で使用され
る多波長用レーザーミラーに関する。
The present invention relates to a multi-wavelength laser mirror used in a laser optical system.

【0002】[0002]

【従来技術】可視光を反射するミラーとして、金属薄膜
からなるミラーと誘電体多層膜からなるミラーがある。
その中でもレーザー等の単波長の光を効率良く反射する
誘電体多層膜からなるミラーはレーザーミラーと呼ば
れ、レーザー光学系では多く使用されている。
2. Description of the Related Art As a mirror that reflects visible light, there are a mirror made of a metal thin film and a mirror made of a dielectric multilayer film.
Among them, a mirror composed of a dielectric multilayer film that efficiently reflects light of a single wavelength such as a laser is called a laser mirror, and is often used in a laser optical system.

【0003】レーザーミラーの基本膜構成は基板上に光
学的膜厚がλ/4の高屈折率層(以下、Hという)と、
光学的膜厚がλ/4の低屈折率層(以下、Lという)の
交互の組み合わせHLHLHL・・・HLHLHであ
る。反射率は交互の組み合わせの繰り返し数によって調
節され、高反射率を得るためにはこの繰り返し数を多く
すればよい。
[0003] The basic film configuration of a laser mirror consists of a high refractive index layer (hereinafter referred to as H) having an optical film thickness of λ / 4 on a substrate,
HLHLH are alternate combinations of low refractive index layers (hereinafter referred to as L) having an optical film thickness of λ / 4. The reflectance is adjusted by the number of repetitions of the alternate combination, and a high reflectance may be obtained by increasing the number of repetitions.

【0004】高反射帯域は高屈折率層と低屈折率層の屈
折率差によって理論的に定義されるので、広い反射帯域
を得るためには屈折率差が大きくなるような膜物質を選
択すればよい。
Since the high reflection band is theoretically defined by the refractive index difference between the high refractive index layer and the low refractive index layer, in order to obtain a wide reflection band, it is necessary to select a film material having a large refractive index difference. I just need.

【0005】[0005]

【発明が解決しようとする課題】しかし、数波長同時に
高反射が必要な場合は、膜物質を選択することにより最
大限に屈折率差を大きくして高反射帯域を広げても要求
波長がはいりきらないような場合がある。また、レーザ
ー耐力等の物性や膜質の要求を充分に満たし、かつ屈折
率差が大きくなるような膜物質は限られている。
However, when high reflection is required at several wavelengths at the same time, even if the refractive index difference is maximized by selecting a film material and the high reflection band is widened, the required wavelength is not increased. There are times when it doesn't work. In addition, film materials that sufficiently satisfy the requirements for physical properties such as laser proof stress and the like and film quality and have a large difference in refractive index are limited.

【0006】さらに、要求波長が通常のレーザーミラー
の高反射帯域の両端にぎりぎり収まる場合は、膜の製造
誤差により高反射帯域が変動し、要求波長が高反射帯域
から外れてしまい、要求を満たさなくなるという問題が
生じる。このような場合は異なる波長用のレーザーミラ
ーを重ね合わせて反射帯域を広げるという方法をとる
が、異なる波長用のレーザーミラーを重ね合わせて反射
帯域を広げるという方法は、層数の大幅な増加が避けら
れず、これはコストの増加等の製造上の不利益や散乱の
増加、レーザー耐力の低下などの光学的な不利益を生じ
させる。
Further, when the required wavelength is barely contained at both ends of the high reflection band of a normal laser mirror, the high reflection band fluctuates due to a manufacturing error of the film, and the required wavelength deviates from the high reflection band. The problem of disappearing occurs. In such a case, the method of overlapping the laser mirrors for different wavelengths to increase the reflection band is used, but the method of overlapping the laser mirrors for different wavelengths to increase the reflection band increases the number of layers significantly. Inevitably, this causes manufacturing disadvantages, such as increased costs, and optical disadvantages, such as increased scattering and reduced laser tolerance.

【0007】そこで、本発明は、膜層数が通常のレーザ
ーミラーの膜層数と同等程度で同一膜物質を用いて、通
常のレーザーミラーの高反射帯域より広い高反射帯域を
有する多波長用レーザーミラーを提供することを目的と
する。
Accordingly, the present invention provides a multi-wavelength laser having a high reflection band wider than that of a normal laser mirror by using the same film material with the same number of film layers as that of a normal laser mirror. It is intended to provide a laser mirror.

【0008】[0008]

【課題を解決するための手段】本発明は第一に「光学基
板上に高屈折率層及び低屈折率層の交互層を積層してな
る多波長用レーザーミラーであって、設計中心波長をλ
とし、前記交互層のうち、光学的膜厚が0以上0.1λ
以下、又は0.35λ以上0.65λ以下である層を少
なくとも1層含み、他の層は光学的膜厚が約0.25λ
であることを特徴とする多波長用レーザーミラー(請求
項1)」を提供する。
SUMMARY OF THE INVENTION The present invention firstly provides a multi-wavelength laser mirror in which alternating layers of a high refractive index layer and a low refractive index layer are laminated on an optical substrate, and has a design center wavelength. λ
Wherein the optical thickness of the alternating layers is 0 or more and 0.1λ or more.
Or at least one layer having a thickness of not less than 0.35λ and not more than 0.65λ, and the other layer has an optical thickness of about 0.25λ.
A multi-wavelength laser mirror (Claim 1).

【0009】また、本発明は第二に「前記光学的膜厚が
0以上0.1λ以下、又は0.35λ以上0.65λ以
下である層を基板から数えて第1層又は最終層以外に設
けたことを特徴とする請求項1記載の多波長用レーザー
ミラー(請求項2)」を提供する。
The present invention also relates to a second aspect of the present invention in which the number of layers having an optical film thickness of 0 to 0.1 λ or 0.35 λ to 0.65 λ is counted from the substrate other than the first layer or the final layer. A multi-wavelength laser mirror according to claim 1 (claim 2) "is provided.

【0010】[0010]

【発明の実施の形態】以下、本発明に係る実施形態とし
てのレーザーミラーを図面を参照しながら説明する。5
60nmと720nmにおいて99%以上の高反射率を
有するレーザーミラーを例に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a laser mirror according to an embodiment of the present invention will be described with reference to the drawings. 5
A laser mirror having a high reflectance of 99% or more at 60 nm and 720 nm will be described as an example.

【0011】図1には、第1の実施形態の多波長用レー
ザー用ミラーが示されている。本発明にかかる第1の実
施の形態の多波長用レーザーミラーの膜構成は、6(H
L)・2H・6(LH)で表わされ、高屈折率層2はT
iO2からなり、低屈折率層3はSiO2からなる。25
層のレーザーミラーのうち13層目の光学的膜厚がλ/
2であり、他の層については光学的膜厚はλ/4であ
る。
FIG. 1 shows a multi-wavelength laser mirror according to the first embodiment. The film configuration of the multi-wavelength laser mirror according to the first embodiment of the present invention is 6 (H
L) ・ 2H ・ 6 (LH), and the high refractive index layer 2
It consists iO 2, the low refractive index layer 3 is made of SiO 2. 25
The optical film thickness of the thirteenth layer of the laser mirror of the layer is λ /
2, and the optical thickness of the other layers is λ / 4.

【0012】設計中心波長λは633nmとした。基板
1として光学研磨された石英ガラス、シリコン、BK7
等 が挙げられるが、特に限定されない。高屈折率層2
として、酸化ジルコニウム(ZrO2)、酸化チタン
(TiO2)、酸化タンタル(Ta25)、酸化ニオブ
(Nb25)、酸化ハフニウム(HfO2)、酸化セリ
ウム(CeO2)等 又はこれらの混合物が挙げられる。
The design center wavelength λ is 633 nm. Optically polished quartz glass, silicon, BK7 as substrate 1
And the like, but are not particularly limited. High refractive index layer 2
As zirconium oxide (ZrO 2 ), titanium oxide (TiO 2 ), tantalum oxide (Ta 2 O 5 ), niobium oxide (Nb 2 O 5 ), hafnium oxide (HfO 2 ), cerium oxide (CeO 2 ) or the like And mixtures thereof.

【0013】低屈折率層3として、酸化アルミニウム
(Al23)、酸化シリコン(SiO 2)、フッ化マグ
ネシウム(MgF2)、酸化ゲルマニウム(GeO2)、
フッ化アルミニウム(AlF3)等が挙げられる。本発
明にかかる第1の実施の形態の多波長用レーザーミラー
の分光反射率特性を図2に示す。
As the low refractive index layer 3, aluminum oxide
(AlTwoOThree), Silicon oxide (SiO Two), Magnesium fluoride
Nesium (MgFTwo), Germanium oxide (GeO)Two),
Aluminum fluoride (AlFThree) And the like. Departure
Multi-wavelength laser mirror according to first embodiment according to the present invention
FIG. 2 shows the spectral reflectance characteristics of.

【0014】560nmと720nmにおいて高反射率
を示し、高反射帯域は560nmを中心として約ー15
nm〜+70nm、720nmを中心として約ー80n
m〜+20nmであり、多少の製造誤差により高反射帯
域が変動したとしても、充分560nmと720nmに
おいて高反射率を示す。また、リップルは高反射帯中央
にのみあり、この位置は多少の製造誤差による変動があ
ったとしても13層目のλ/2の膜厚の製造誤差により
変動するものなので、大幅に変動することはない。 〔比較例〕比較例1にかかる多波長用レーザーミラーの
膜構成は12(HL)・Hであり、高屈折率層はTiO
2からなり、低屈折率層はSiO2からなる。
High reflectivity is exhibited at 560 nm and 720 nm, and the high reflection band is about -15 nm around 560 nm.
nm to +70 nm, about -80 n around 720 nm
m to +20 nm, and sufficiently exhibit high reflectance at 560 nm and 720 nm even if the high reflection band fluctuates due to some manufacturing errors. Also, the ripple is only at the center of the high reflection band, and this position varies greatly due to the manufacturing error of the λ / 2 film thickness of the thirteenth layer even if there is a slight manufacturing error. There is no. Comparative Example The film configuration of the multi-wavelength laser mirror according to Comparative Example 1 was 12 (HL) · H, and the high refractive index layer was TiO.
2 and the low refractive index layer is made of SiO 2 .

【0015】図3は比較例1にかかる多波長用レーザー
ミラーの分光反射率特性である。560nmと720n
mで99%以上の高反射を確保することができるが、高
反射帯域は560nmに対して約ー5nm、720nm
に対して約+5nmの幅の余裕しかなく、製造誤差によ
り分光特性がズレていまうと、どちらかの波長が高反射
帯域から外れてしまい、要求を満たさなくなる。
FIG. 3 shows the spectral reflectance characteristics of the multi-wavelength laser mirror according to Comparative Example 1. 560nm and 720n
Although high reflection of 99% or more can be ensured in m, the high reflection band is about -5 nm and 720 nm for 560 nm.
If the spectral characteristics are shifted due to a manufacturing error, one of the wavelengths is out of the high reflection band, and the requirement is not satisfied.

【0016】比較例2にかかる多波長用レーザーミラー
の膜構成は各層の光学的膜厚がλ/4以外(各層は薄膜
設計により最適化されている)で、高屈折率層と低屈折
率層からなる25層の交互層である。高屈折率層はTi
2からなり、低屈折率層はSiO2からなる。図4は比
較例2にかかる多波長用レーザーミラーの分光反射率特
性である。
The film configuration of the multi-wavelength laser mirror according to Comparative Example 2 is such that each layer has an optical thickness other than λ / 4 (each layer is optimized by a thin film design), and a high refractive index layer and a low refractive index layer. There are 25 alternating layers of layers. High refractive index layer is Ti
O 2 , and the low refractive index layer is made of SiO 2 . FIG. 4 shows the spectral reflectance characteristics of the multi-wavelength laser mirror according to Comparative Example 2.

【0017】560nmと720nmで99%以上の高
反射を確保することができるが、リップルと呼ばれる高
反射帯の反射率の落ち込み部が多数あり、製造誤差によ
りリップルの位置と大きさがズレることを考慮すると、
要求を満たせなくなる可能性がある。図5には、第2の
実施形態の多波長用レーザーミラーが示されている。
Although high reflection of 99% or more can be ensured at 560 nm and 720 nm, there are a large number of recesses in the reflectance of a high reflection band called a ripple, and the position and size of the ripple are shifted due to manufacturing errors. Considering
It may not be possible to satisfy the request. FIG. 5 shows a multi-wavelength laser mirror according to the second embodiment.

【0018】本発明にかかる第2の実施の形態の多波長
用レーザーミラーの膜構成は、4(HL)・2H・3
(LH)・L・2H・4(LH)で表わされ、高屈折率
層2はTiO2からなり、低屈折率層3はSiO2からな
る。25層のレーザーミラーのうち9層目と17層目の
光学的膜厚がλ/2であり、他の層については光学的膜
厚はλ/4である。
The film configuration of the multi-wavelength laser mirror according to the second embodiment of the present invention is 4 (HL) .2H.3.
(LH) · L · 2H · 4 (LH), where the high refractive index layer 2 is made of TiO 2 and the low refractive index layer 3 is made of SiO 2 . The optical thickness of the ninth and seventeenth layers of the 25-layer laser mirror is λ / 2, and the optical thicknesses of the other layers are λ / 4.

【0019】本発明にかかる第2の実施の形態の多波長
用レーザーミラーの分光反射率特性を図6に示す。中央
のリップルは大きくなっているが、560nmと720
nmにおいて高反射率を示し、高反射帯域は560nm
を中心として約ー20nm〜+50nm、720nmを
中心として約ー70nm〜+40nmであり、多少の製
造誤差により高反射帯域が変動したとしても、充分56
0nmと720nmにおいて高反射率を示す。
FIG. 6 shows the spectral reflectance characteristics of the multi-wavelength laser mirror according to the second embodiment of the present invention. The ripple at the center is larger, but at 560 nm and 720
high reflectivity in nm, high reflection band is 560 nm
From about -20 nm to +50 nm centering on the center, and from about -70 nm to +40 nm centering on the 720 nm.
It shows high reflectance at 0 nm and 720 nm.

【0020】[0020]

【発明の効果】以上説明した通り、本発明にかかる多波
長用レーザーミラーは、一部の波長について反射率を犠
牲にしているが、その波長で反射帯域を左右に分割し
て、通常のレーザーミラーの膜層数と同等程度で同一膜
物質を用いて通常のレーザーミラーの高反射帯域より広
い高反射帯域を達成することができた。
As described above, the multi-wavelength laser mirror according to the present invention sacrifices the reflectance for a part of the wavelength. A high reflection band wider than the high reflection band of a normal laser mirror could be achieved by using the same film material with the same number of film layers as the mirror.

【図面の簡単な説明】[Brief description of the drawings]

【図1】第1の実施形態の多波長用レーザー用ミラーの
概略断面図である。
FIG. 1 is a schematic sectional view of a mirror for a multi-wavelength laser according to a first embodiment.

【図2】第1の実施の形態の多波長用レーザーミラーの
分光反射率特性ある。
FIG. 2 shows a spectral reflectance characteristic of the multi-wavelength laser mirror according to the first embodiment.

【図3】比較例1にかかる多波長用レーザーミラーの分
光反射率特性である。
FIG. 3 is a spectral reflectance characteristic of a multi-wavelength laser mirror according to Comparative Example 1.

【図4】比較例2にかかる多波長用レーザーミラーの分
光反射率特性である。
FIG. 4 shows a spectral reflectance characteristic of a multi-wavelength laser mirror according to Comparative Example 2.

【図5】第2の実施形態の多波長用レーザー用ミラーの
概略断面図である。
FIG. 5 is a schematic sectional view of a multi-wavelength laser mirror according to a second embodiment.

【図6】第2の実施形態の多波長用レーザーミラーの分
光反射率特性である。
FIG. 6 shows a spectral reflectance characteristic of the multi-wavelength laser mirror according to the second embodiment.

【符号の説明】[Explanation of symbols]

1・・・基板 2・・・高屈折率層 3・・・低屈折率層 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... High refractive index layer 3 ... Low refractive index layer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】光学基板上に高屈折率層及び低屈折率層の
交互層を積層してなる多波長用レーザーミラーであっ
て、 設計中心波長をλとし、前記交互層のうち、光学的膜厚
が0以上0.1λ以下、又は0.35λ以上0.65λ
以下である層を少なくとも1層含み、他の層は光学的膜
厚が約0.25λであることを特徴とする多波長用レー
ザーミラー。
1. A multi-wavelength laser mirror comprising an alternating layer of a high-refractive-index layer and a low-refractive-index layer laminated on an optical substrate, wherein a design center wavelength is λ, and The film thickness is from 0 to 0.1λ or from 0.35λ to 0.65λ.
A multi-wavelength laser mirror comprising at least one of the following layers, and the other layer has an optical thickness of about 0.25λ.
【請求項2】前記光学的膜厚が0以上0.1λ以下、又
は0.35λ以上0.65λ以下である層を基板側から
数えて第1層又は最終層以外に設けたことを特徴とする
請求項1記載の多波長用レーザーミラー。
2. The method according to claim 1, wherein the layer having the optical film thickness of 0 to 0.1λ or 0.35λ to 0.65λ is provided in addition to the first layer or the last layer, counting from the substrate side. The multi-wavelength laser mirror according to claim 1.
JP8189011A 1996-07-18 1996-07-18 Laser mirror for multiwavelength Pending JPH1031106A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8189011A JPH1031106A (en) 1996-07-18 1996-07-18 Laser mirror for multiwavelength

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8189011A JPH1031106A (en) 1996-07-18 1996-07-18 Laser mirror for multiwavelength

Publications (1)

Publication Number Publication Date
JPH1031106A true JPH1031106A (en) 1998-02-03

Family

ID=16233812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8189011A Pending JPH1031106A (en) 1996-07-18 1996-07-18 Laser mirror for multiwavelength

Country Status (1)

Country Link
JP (1) JPH1031106A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001041271A1 (en) * 1999-11-30 2001-06-07 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, method for producing the same, and optical disk device
JP2006220903A (en) * 2005-02-10 2006-08-24 Canon Inc Reflection mirror, exposure device and method of manufacturing device
JP2006278391A (en) * 2005-03-28 2006-10-12 Sanyo Electric Co Ltd Semiconductor laser element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001041271A1 (en) * 1999-11-30 2001-06-07 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, method for producing the same, and optical disk device
US6798811B1 (en) 1999-11-30 2004-09-28 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, method for fabricating the same, and optical disk apparatus
US7292615B2 (en) 1999-11-30 2007-11-06 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, method for fabricating the same, and optical disk apparatus
JP2006220903A (en) * 2005-02-10 2006-08-24 Canon Inc Reflection mirror, exposure device and method of manufacturing device
JP2006278391A (en) * 2005-03-28 2006-10-12 Sanyo Electric Co Ltd Semiconductor laser element

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