JPH10303464A - Smd-type led - Google Patents

Smd-type led

Info

Publication number
JPH10303464A
JPH10303464A JP9118654A JP11865497A JPH10303464A JP H10303464 A JPH10303464 A JP H10303464A JP 9118654 A JP9118654 A JP 9118654A JP 11865497 A JP11865497 A JP 11865497A JP H10303464 A JPH10303464 A JP H10303464A
Authority
JP
Japan
Prior art keywords
electrode
led
electrodes
heat sink
led element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9118654A
Other languages
Japanese (ja)
Other versions
JP3856250B2 (en
Inventor
Arata Shimozawa
新 下澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Electronics Co Ltd
Original Assignee
Citizen Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Electronics Co Ltd filed Critical Citizen Electronics Co Ltd
Priority to JP11865497A priority Critical patent/JP3856250B2/en
Publication of JPH10303464A publication Critical patent/JPH10303464A/en
Application granted granted Critical
Publication of JP3856250B2 publication Critical patent/JP3856250B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To prevent the heat generation of an LED and materialize high- brightness light emission by radiating heat, even in case that a large current is let flow to an LED. SOLUTION: This LED is provided with a pair of opposed top electrodes 2 at the top ends of an insulating substrate 1, and for the pair of the top electrodes 2, a bottom electrode 3 at the rear and a side electrode 4 leading to the top electrode 2 and the bottom electrode 3 at the side are made each. In the region which includes the die bond area 9 and its periphery on one top electrode 2a, a heat radiating plate 10 consisting of conductive member is fixed by a fixing means such as a conductive adhesive 11 or the like, an LED element 5 is mounted on the heat radiating plate 10, and a bonding wire 6 is connected to the other top electrode 2b sealed with sealing resin 7. Since it radiates heat even if a large current (about 300 mA or over) is let flow, it prevents the heat generation of the LED, and high-brightness light emission can be materialized. The high-brightness LED becomes inexpensive, and this can be mounted on a high-brightness target product which is not used up to now.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は高輝度発光のSMD
型LEDに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-luminance SMD.
Type LED.

【0002】[0002]

【従来の技術】近年の電子機器は、高性能化、多機能化
とともに小型化、軽量化を追求している。そのため電子
部品をプリント基板上に実装し、樹脂封止するものが多
い。SMD部品の多くは略平行六面体形状をしており、
プリント基板上の配線パターンに半田付け等の固着手段
で接続される。
2. Description of the Related Art In recent years, electronic devices have been pursuing high performance and multiple functions, as well as miniaturization and weight reduction. Therefore, electronic components are often mounted on a printed circuit board and sealed with a resin. Many of the SMD parts have a substantially parallelepiped shape,
It is connected to the wiring pattern on the printed board by a fixing means such as soldering.

【0003】前記一般的なSMD型LEDの構造につい
て、図面に基づいてその概要を説明する。
An outline of the structure of the general SMD LED will be described with reference to the drawings.

【0004】図12は、従来の一般的なSMD型LED
の斜視図である。図12において、絶縁基板1はガラス
エポキシ樹脂等よりなる上下両面が銅箔張りの樹脂基板
で、絶縁基板1の全表面を無電解メッキにより銅メッキ
層を形成し、その上に電解メッキによりニッケルメッキ
層を形成し、更に、その上に電解メッキにより金メッキ
層を積層し、メッキ層の厚さは、例えば25μm程度形
成される。
FIG. 12 shows a conventional general SMD type LED.
It is a perspective view of. In FIG. 12, an insulating substrate 1 is a resin substrate made of a glass epoxy resin or the like and covered with copper foil on both upper and lower surfaces. A copper plating layer is formed on the entire surface of the insulating substrate 1 by electroless plating, and nickel is formed thereon by electrolytic plating. A plating layer is formed, and a gold plating layer is further laminated thereon by electrolytic plating. The thickness of the plating layer is, for example, about 25 μm.

【0005】更に、メッキレジストをラミネートし、露
光現像してパターン形成し、絶縁基板1の上面端部に対
向する一対の上面電極2と、下面端部に対向する一対の
下面電極3及び、前記上面電極2及び前記下面電極3と
連なるように側面電極4が形成されている。前記一対の
上面電極2の一方の上面電極2aに、後述するLED素
子5がダイボンディングされ、他方の上面電極2bにA
uワイヤ等よりなるボンディングワイヤ6で接続されて
いる。7は、前記LED素子5及び接続部の保護と、前
記LED素子5の発光を効果的にするために、透光性の
エポキシ樹脂等で封止する封止樹脂である。SMD型L
ED8が完成される。
Further, a plating resist is laminated, exposed and developed to form a pattern, and a pair of upper electrodes 2 facing the upper end of the insulating substrate 1, a pair of lower electrodes 3 facing the lower end, and A side electrode 4 is formed so as to be continuous with the upper electrode 2 and the lower electrode 3. An LED element 5 described later is die-bonded to one upper electrode 2a of the pair of upper electrodes 2, and A
They are connected by a bonding wire 6 made of a u wire or the like. Reference numeral 7 denotes a sealing resin that is sealed with a translucent epoxy resin or the like in order to protect the LED element 5 and the connection portion and effectively emit light from the LED element 5. SMD type L
ED8 is completed.

【0006】図14及び図15は、LED素子の電極構
造を示す斜視図及び絶縁基板にLED素子をワイヤーボ
ンディング方式で実装した部分拡大断面図である。図1
4及び図15に示すように、LED素子5は、ジャンク
ション5aを挟み、N層5bとP層5cで構成され、L
ED素子5の一方の電極5d、即ち、N層5b側の電極
(カソード電極)部を、絶縁基板1の一方の電極2aに
導電性接着剤11等の固着手段で固着する。LED素子
5の他方の電極5e、即ち、P層5c側の電極(アノー
ド電極)部を、絶縁基板1の他方の電極2bにボンディ
ングワイヤ6で接続する。
FIG. 14 and FIG. 15 are a perspective view showing the electrode structure of the LED element and a partially enlarged sectional view in which the LED element is mounted on an insulating substrate by a wire bonding method. FIG.
As shown in FIG. 4 and FIG. 15, the LED element 5 includes an N layer 5b and a P layer 5c with a junction 5a interposed therebetween.
One electrode 5d of the ED element 5, that is, the electrode (cathode electrode) on the N layer 5b side is fixed to the one electrode 2a of the insulating substrate 1 by a fixing means such as a conductive adhesive 11. The other electrode 5 e of the LED element 5, that is, the electrode (anode electrode) on the P layer 5 c side is connected to the other electrode 2 b of the insulating substrate 1 by a bonding wire 6.

【0007】図16及び図17は、他のLED素子の電
極構造を示す斜視図及び絶縁基板にLED素子をノンワ
イヤーボンディング方式で実装した部分拡大断面図であ
る。図16及び図17に示すように、LED素子5の一
方の電極5d、即ち、N層5b側の電極(カソード電
極)部を、絶縁基板1の一方の電極2bに、また、LE
D素子5の他方の電極5e、即ち、P層5c側の電極
(アノード電極)部を、絶縁基板1の他方の電極2a
に、それぞれ半田11a等の固着手段で固着する。
FIGS. 16 and 17 are a perspective view showing an electrode structure of another LED element and a partially enlarged sectional view in which the LED element is mounted on an insulating substrate by a non-wire bonding method. As shown in FIGS. 16 and 17, one electrode 5 d of the LED element 5, that is, the electrode (cathode electrode) on the N layer 5 b side is connected to one electrode 2 b of the insulating substrate 1.
The other electrode 5e of the D element 5, that is, the electrode (anode electrode) on the P layer 5c side is connected to the other electrode 2a of the insulating substrate 1.
Are fixed by fixing means such as solder 11a.

【0008】前記絶縁基板1はガラスエポキシ基板を使
用したが、アルミナセラミック基板、ポリエステルやポ
リイミド等のプラスチックフィルム基板等を使用しても
良いことは言うまでもない。
Although a glass epoxy substrate is used as the insulating substrate 1, it goes without saying that an alumina ceramic substrate, a plastic film substrate of polyester or polyimide or the like may be used.

【0009】前記SMD型LED8は図示しないプリン
ト基板等のマザーボード上の配線パターンに、半田付け
等の固着手段により面実装される。
The SMD type LED 8 is surface-mounted on a wiring pattern on a motherboard such as a printed board (not shown) by a fixing means such as soldering.

【0010】図13は、一般的なSMD型LEDにおい
て、電流と放熱(発熱)の関係を示すグラフである。横
軸に電流IF(mA)、縦軸に発熱T(°C)で表す
と、流す電流と発熱とは略直線的に変化して、比例関係
を示す。直線(a)の傾きは、SMD型LEDを構成す
る部材の熱抵抗係数によって個別に異なる。
FIG. 13 is a graph showing the relationship between current and heat dissipation (heat generation) in a general SMD type LED. When the horizontal axis represents current IF (mA) and the vertical axis represents heat generation T (° C.), the flowing current and heat generation change substantially linearly, indicating a proportional relationship. The slope of the straight line (a) differs individually depending on the thermal resistance coefficient of the members constituting the SMD type LED.

【0011】図3は、SMD型LEDにおいて、電流と
輝度との関係を示すグラフである。横軸に電流IF(m
A)、縦軸に輝度Iv(mcd)で表すと、一般に、流
す電流の大きさが所定の点(A)までは、電流を流すだ
けLEDの輝度は比例してアップすることが知られてい
る。
FIG. 3 is a graph showing the relationship between current and luminance in an SMD type LED. The horizontal axis indicates the current IF (m
A) When the ordinate represents luminance Iv (mcd), it is generally known that the luminance of the LED increases in proportion to the amount of current flowing until the magnitude of the flowing current reaches a predetermined point (A). I have.

【0012】[0012]

【発明が解決しようとする課題】しかしながら、前述し
た従来のSMD型LEDには次のような問題点がある。
即ち、図3の輝度曲線(b)に示すように、LEDは高
い輝度を得るために大電流を流す必要があるが、電流値
が略300mA以上になると、LEDの発熱の方が大き
くなり、輝度がサチレイトして上げることができない。
これは発熱による光変換効率の低下が輝度に影響を及ぼ
すものである。大電流を流すことにより熱量が増大し輝
度はダウンしてしまうと言う致命的な問題があった。
However, the above-mentioned conventional SMD type LED has the following problems.
That is, as shown in the brightness curve (b) of FIG. 3, the LED needs to flow a large current in order to obtain high brightness, but when the current value is about 300 mA or more, the heat generation of the LED increases, The brightness is saturated and cannot be increased.
This is because a decrease in light conversion efficiency due to heat generation affects luminance. There is a fatal problem that a large amount of current causes an increase in heat and a decrease in luminance.

【0013】本発明は上記従来の課題に鑑みなされたも
のであり、その目的は、大電流をLEDに流した場合で
も、放熱することによりLEDの発熱を防ぎ、高輝度発
光が実現できる。高輝度のSMD型LEDを安価に提供
するものである。
The present invention has been made in view of the above-mentioned conventional problems, and has an object to prevent heat generation of the LED by radiating heat even when a large current is applied to the LED, thereby realizing high brightness light emission. It is intended to provide a high-brightness SMD-type LED at a low cost.

【0014】[0014]

【課題を解決するための手段】上記目的を達成するため
に、本発明におけるSMD型LEDは、絶縁基板の上面
端部に対向する一対の上面電極を設け、該一対の上面電
極は、それぞれその裏面に下面電極と、その側面に、前
記上面電極及び前記下面電極と連なる側面電極を形成し
て、前記一方の上面電極にLED素子の一方の電極を、
他方の上面電極にLED素子の他方の電極をそれぞれ接
続し、樹脂封止してなるSMD型LEDにおいて、前記
一対の上面電極の中、少なくともいづれかの上面電極上
に導電性部材よりなる放熱板を固着したことを特徴とす
るものである。
In order to achieve the above object, an SMD type LED according to the present invention is provided with a pair of upper electrodes opposed to an upper end of an insulating substrate, and the pair of upper electrodes are respectively provided. A lower surface electrode on the back surface, a side electrode connected to the upper surface electrode and the lower surface electrode on the side surface, and one electrode of the LED element on the one upper surface electrode,
In the SMD type LED in which the other electrode of the LED element is connected to the other upper electrode and the resin is sealed, a radiating plate made of a conductive member is provided on at least one of the upper electrodes among the pair of upper electrodes. It is characterized by being fixed.

【0015】また、前記一方の上面電極上に放熱板を固
着し、該放熱板上にLED素子の一方の電極を、他方の
上面電極上にLED素子の他方の電極をそれぞれ接続し
たことを特徴とするものである。。
Further, a heat sink is fixed on the one upper electrode, and one electrode of the LED element is connected on the heat sink, and the other electrode of the LED element is connected on the other upper electrode. It is assumed that. .

【0016】また、前記一方の上面電極上のダイボンド
エリア周辺を含む領域に前記放熱板を固着し、該放熱板
上にLED素子をダイボンド実装し、他方の上面電極上
にボンディングワイヤを接続したことを特徴とするもの
である。
Further, the heat sink is fixed to a region including the periphery of the die bond area on the one upper electrode, the LED element is die-bonded on the heat sink, and a bonding wire is connected to the other upper electrode. It is characterized by the following.

【0017】また、前記一方の上面電極上に前記放熱板
を固着すると共に、前記ダイボンドエリア周辺を含む上
面電極上に直接LED素子をダイボンドし、他方の上面
電極上にボンディングワイヤを接続したことを特徴とす
るものである。
Further, it is preferable that the heat sink is fixed on the one upper electrode, the LED element is die-bonded directly on the upper electrode including the periphery of the die bonding area, and a bonding wire is connected on the other upper electrode. It is a feature.

【0018】また、前記一対の上面電極の中、少なくと
もいづれかの上面電極上に前記放熱板を固着し、前記一
方の上面電極上に直接LED素子の一方の電極を、他方
の上面電極上にLED素子の他方の電極をそれぞれ接続
したことを特徴とするものである。
Further, the radiating plate is fixed on at least one of the upper electrodes of the pair of upper electrodes, and one electrode of the LED element is directly disposed on the one upper electrode, and the LED is disposed on the other upper electrode. The other electrodes of the element are connected to each other.

【0019】また、前記一対の上面電極上にそれぞれ放
熱板を固着し、該一方の放熱板上にLED素子の一方の
電極を、他方の放熱板上にLED素子の他方の電極をそ
れぞれ接続したことを特徴とするものである。
A heat sink is fixed on the pair of upper electrodes, and one electrode of the LED element is connected to the one heat sink, and the other electrode of the LED element is connected to the other heat sink. It is characterized by the following.

【0020】[0020]

【発明の実施の形態】以下図面に基づいて本発明におけ
るSMD型LEDについて説明する。図1は本発明の第
1の実施の形態であるSMD型LEDの斜視図、図2
は、図1のA−A線断面図、図3は従来と本発明のSM
D型LEDの電流と輝度との関係を示すグラフである。
図において、従来技術と同一部材は同一符号で示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an SMD type LED according to the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of an SMD type LED according to a first embodiment of the present invention, and FIG.
FIG. 3 is a sectional view taken along the line AA of FIG. 1, and FIG.
It is a graph which shows the relationship between the current of D-type LED, and brightness | luminance.
In the drawings, the same members as those of the prior art are denoted by the same reference numerals.

【0021】図1及び図2において、1は略平行六面体
形状の絶縁基板であり、絶縁基板1の上面端部に対向す
る一対の上面電極2と、下面に下面電極3と、前記上面
電極2及び前記下面電極3と連なるように側面電極4を
形成することは上述した従来技術と同様である。前記一
方の上面電極2aのダイボンドエリア9の周辺を含む領
域に、導電性があり半田濡れ性がある、例えば、ステン
レス、銅、アルミ等よりなる放熱板10を導電性接着剤
11等の固着手段で固着し、該放熱板10の上に前記L
ED素子5を実装する。前記他方の上面電極2bにはA
uワイヤ等よりなるボンディングワイヤ6でワイヤボン
ディングされている。7は、従来と同様に透光性のエポ
キシ樹脂等の封止樹脂で、放熱板10の放熱性を効果的
にするために、放熱板10の一部を露出した状態で、L
ED素子5と接続部を保護するように樹脂封止する。以
上によりSMD型LED12が完成される。
1 and 2, reference numeral 1 denotes an insulating substrate having a substantially parallelepiped shape, a pair of upper electrodes 2 facing the upper end of the insulating substrate 1, a lower electrode 3 on the lower surface, and the upper electrode 2 The formation of the side surface electrode 4 so as to be continuous with the lower surface electrode 3 is the same as in the above-described related art. In a region including the periphery of the die bonding area 9 of the one upper surface electrode 2a, a radiating plate 10 made of, for example, stainless steel, copper, aluminum, or the like, having conductivity and solder wettability, is fixed with a conductive adhesive 11 or the like. And the L is placed on the heat sink 10.
The ED element 5 is mounted. The other upper surface electrode 2b has A
Wire bonding is performed by a bonding wire 6 made of a u wire or the like. Reference numeral 7 denotes a sealing resin such as a translucent epoxy resin as in the related art. In order to make the heat radiation of the heat radiation plate 10 effective, L is a state in which a part of the heat radiation plate 10 is exposed.
Resin sealing is performed to protect the ED element 5 and the connection part. Thus, the SMD type LED 12 is completed.

【0022】前記SMD型LED12は図示しないプリ
ント基板等のマザーボード上の配線パターンに、半田付
け等の固着手段により面実装が可能である。
The SMD type LED 12 can be surface-mounted on a wiring pattern on a mother board such as a printed board (not shown) by a fixing means such as soldering.

【0023】図3は、前述した電流と輝度との関係を示
すグラフで、曲線(b)は従来のSMD型LED、曲線
(c)は本発明の放熱板を固着したSMD型LEDであ
る。図3において、流す電流の大きさが所定の点(A)
までは、電流を流すだけLEDの輝度は比例してアップ
するが、前述したように、曲線(b)は、電流値が略3
00mA以上になると、LEDの発熱の方が大きくな
り、輝度がサチレイトして上げることができない。曲線
(c)は、前記電流値が略300mA以上になっても、
放熱板10の放熱効果によりLEDの輝度は上昇する。
図3に示すように、δIvは電流値が300mAにおけ
る放熱効果による輝度上昇分である。大電流を流しても
放熱するため、輝度は極端にダウンせず上昇し続ける。
FIG. 3 is a graph showing the relationship between the current and the luminance described above. Curve (b) shows a conventional SMD type LED, and curve (c) shows an SMD type LED to which a heat sink of the present invention is fixed. In FIG. 3, the magnitude of the flowing current is a predetermined point (A).
Up to this point, the brightness of the LED increases in proportion to the current flow, but as described above, the curve (b) shows that the current value is approximately 3
When the current exceeds 00 mA, the heat generated by the LED increases, and the luminance is saturated and cannot be increased. Curve (c) shows that even if the current value becomes approximately 300 mA or more,
Due to the heat radiation effect of the heat radiation plate 10, the brightness of the LED increases.
As shown in FIG. 3, δIv is a luminance increase due to a heat radiation effect when the current value is 300 mA. Since heat is dissipated even when a large current flows, the luminance does not decrease extremely but continues to increase.

【0024】図4は、本発明の第2の実施の形態である
SMD型LEDの断面図である。LED素子5を放熱板
10の上に実装せずに、一方の上面電極2a上に放熱板
10を固着し、ダイボンドエリア9の周辺を含む上面電
極2a上にLED素子5をダイボンドし、他方の上面電
極2b上にボンディングワイヤ6を接続しても良い。以
上によりSMD型LED12Aが完成される。
FIG. 4 is a sectional view of an SMD type LED according to a second embodiment of the present invention. Without mounting the LED element 5 on the heat sink 10, the heat sink 10 is fixed on one upper electrode 2 a, and the LED element 5 is die-bonded on the upper electrode 2 a including the periphery of the die bond area 9. A bonding wire 6 may be connected on the upper surface electrode 2b. Thus, the SMD LED 12A is completed.

【0025】図5は、本発明の第3の実施の形態である
SMD型LEDの斜視図、図6は、図5のB−B線断面
図である。絶縁基板1の上面端部に対向する一対の上面
電極2と、下面に下面電極3と、前記上面電極2及び前
記下面電極3と連なるように側面電極4を形成すること
は上述した従来技術と同様である。前記絶縁基板1の一
方の上面電極2a上に、前記放熱板10を導電性接着剤
11等の固着手段で固着すると共に、一方の上面電極2
a上に直接LED素子5の一方の電極5e、即ち、P層
5c側の電極(アノード電極)部を、他方の上面電極2
b上にLED素子5の他方の電極5d、即ち、N層5b
側の電極(カソード電極)部をそれぞれ接続し、封止樹
脂7で樹脂封止する。前述と同様に、放熱板10の樹脂
封止部から露出する表面を可能な限り広く確保すること
により、放熱板による熱の拡散・放熱を有利にすること
は言うまでもない。以上によりSMD型LED12Bが
完成される。
FIG. 5 is a perspective view of an SMD type LED according to a third embodiment of the present invention, and FIG. 6 is a sectional view taken along line BB of FIG. Forming a pair of upper electrodes 2 facing the upper end of the insulating substrate 1, a lower electrode 3 on the lower surface, and forming the side electrodes 4 so as to be continuous with the upper electrode 2 and the lower electrode 3 are the same as those of the related art described above. The same is true. The heat sink 10 is fixed on one upper electrode 2a of the insulating substrate 1 by a fixing means such as a conductive adhesive 11 and the other upper electrode 2a.
One electrode 5e of the LED element 5, that is, the electrode (anode electrode) on the P layer 5c side is directly placed on the
b, the other electrode 5d of the LED element 5, that is, the N layer 5b
Side electrodes (cathode electrodes) are connected to each other, and sealed with a sealing resin 7. As described above, it is needless to say that the spread and heat dissipation of the heat by the radiator plate are made advantageous by securing the surface of the radiator plate 10 exposed from the resin sealing portion as large as possible. Thus, the SMD LED 12B is completed.

【0026】図7は、本発明の第4の実施の形態である
SMD型LEDの断面図である。図5では、一方の上面
電極2a上のみに放熱板10を固着したが、図7におい
ては、一対の上面電極2a、2b上にそれぞれ放熱板1
0を固着して、一方の上面電極2a上に直接LED素子
5の一方の電極5eを、他方の上面電極2b上にLED
素子5の他方の電極5dをそれぞれ接続しても良い。以
上によりSMD型LED12Cが完成される。
FIG. 7 is a sectional view of an SMD type LED according to a fourth embodiment of the present invention. In FIG. 5, the radiator plate 10 is fixed only on one of the upper electrodes 2a, but in FIG. 7, the radiator plate 1 is provided on the pair of upper electrodes 2a, 2b.
0 is fixed, and one electrode 5e of the LED element 5 is directly disposed on the one upper electrode 2a, and the LED 5 is disposed on the other upper electrode 2b.
The other electrode 5d of the element 5 may be connected. Thus, the SMD LED 12C is completed.

【0027】図8は、本発明の第5の実施の形態である
SMD型LEDの断面図である。一対の上面電極2a、
2b上にそれぞれ放熱板10を固着して、一方の放熱板
10の端部上にLED素子5の一方の電極5dを、他方
の放熱板10の端部上にLED素子5の他方の電極5e
をそれぞれ接続してもよい。以上によりSMD型LED
12Dが完成される。
FIG. 8 is a sectional view of an SMD type LED according to a fifth embodiment of the present invention. A pair of upper electrodes 2a,
2b, a heat sink 10 is fixed to each of the two heat sinks, one electrode 5d of the LED element 5 is placed on one end of the heat sink 10, and the other electrode 5e of the LED element 5 is placed on the other end of the heat sink 10.
May be connected respectively. By the above, SMD type LED
12D is completed.

【0028】図9及び図10は、本発明の第6及び第7
の実施の形態であるSMD型LEDの断面図である。前
記一方の上面電極2a上に放熱板10を固着し、該放熱
板10上にLED素子5の一方の電極5eを、他方の上
面電極2b上にLED素子5の他方の電極5dをそれぞ
れ接続してSMD型LED12E及び12Fが完成され
る。
FIGS. 9 and 10 show the sixth and seventh embodiments of the present invention.
It is sectional drawing of the SMD type LED which is embodiment of 1st. A heat sink 10 is fixed on the one upper electrode 2a, and one electrode 5e of the LED element 5 is connected to the heat sink 10 and the other electrode 5d of the LED element 5 is connected to the other upper electrode 2b. Thus, the SMD LEDs 12E and 12F are completed.

【0029】図11(a)、(b)、(c)及び(d)
は、放熱板10の形状と、上面電極2上に配置した状態
の平面図である。上面電極2上に固着する放熱板10の
形状は、図11(a)のように上面電極2の一方の電極
2aのみの両端に分散して配置する。図11(b)のよ
うに、両方の電極2a、2bの四隅に分散して配置す
る。図11(c)のように、両方の電極2a、2bの両
端の対角の位置に分散して配置する。図11(d)のよ
うに、両方の電極2a、2bに異なる大きさで配置す
る。図11は一例であり、設計の都合上様々な形態を採
用しても良い。
FIGS. 11 (a), (b), (c) and (d)
FIG. 3 is a plan view of the shape of the heat sink 10 and a state in which the heat sink 10 is arranged on the upper electrode 2. The shape of the heat radiating plate 10 fixed on the upper surface electrode 2 is dispersed and arranged at both ends of only one electrode 2a of the upper surface electrode 2 as shown in FIG. As shown in FIG. 11B, the electrodes 2a and 2b are dispersedly arranged at four corners. As shown in FIG. 11C, the electrodes 2a and 2b are dispersedly arranged at diagonal positions on both ends. As shown in FIG. 11D, the electrodes 2a and 2b are arranged with different sizes. FIG. 11 is an example, and various forms may be adopted for convenience of design.

【0030】[0030]

【発明の効果】以上説明したように、本発明によれば、
SMD型LEDにおいて、絶縁基板の上面端部に対向す
る一対の上面電極を設け、該一対の上面電極は、それぞ
れその裏面に下面電極と、その側面に、前記上面電極及
び前記下面電極と連なる側面電極を形成して、一対の上
面電極の中、少なくともいづれかの上面電極上に導電性
部材よりなる放熱板を固着し、上面電極の上又は放熱板
の上にLED素子を実装し、樹脂封止する。SMD型L
EDに略300mA以上の大電流を流しても、LEDの
発熱は、放熱板により拡散・放熱するため、高輝度発光
が実現できる。これにより、高輝度LEDが安価にな
り、従来使用されていない高輝度ターゲット製品に搭載
が可能である。
As described above, according to the present invention,
In the SMD type LED, a pair of upper electrodes is provided opposite to the upper end of the insulating substrate, and the pair of upper electrodes are respectively provided on the back surface with a lower electrode, and on the side surface thereof are connected to the upper electrode and the lower electrode. An electrode is formed, and a heat sink made of a conductive member is fixed on at least one of the upper electrodes of the pair of upper electrodes, and an LED element is mounted on the upper electrode or the heat sink, and resin sealing is performed. I do. SMD type L
Even when a large current of about 300 mA or more flows through the ED, heat generated by the LED is diffused and radiated by the heat radiating plate, so that high-luminance light emission can be realized. As a result, the high-brightness LED becomes inexpensive and can be mounted on a high-brightness target product that has not been used conventionally.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態に係わるSMD型L
EDの斜視図である。
FIG. 1 is an SMD type L according to a first embodiment of the present invention.
It is a perspective view of ED.

【図2】図1のA−A線断面図である。FIG. 2 is a sectional view taken along line AA of FIG.

【図3】従来及び本発明のLEDの電流と輝度との関係
を示すグラフである。
FIG. 3 is a graph showing the relationship between current and luminance of conventional and inventive LEDs.

【図4】本発明の第2の実施の形態に係わるSMD型L
EDの断面図である。
FIG. 4 is an SMD type L according to a second embodiment of the present invention.
It is sectional drawing of ED.

【図5】本発明の第3の実施の形態に係わるSMD型L
EDの斜視図である。
FIG. 5 is an SMD type L according to a third embodiment of the present invention.
It is a perspective view of ED.

【図6】図5のB−B線断面図である。FIG. 6 is a sectional view taken along line BB of FIG. 5;

【図7】本発明の第4の実施の形態に係わるSMD型L
EDの断面図である。
FIG. 7 shows an SMD type L according to a fourth embodiment of the present invention.
It is sectional drawing of ED.

【図8】本発明の第5の実施の形態に係わるSMD型L
EDの断面図である。
FIG. 8 shows an SMD type L according to a fifth embodiment of the present invention.
It is sectional drawing of ED.

【図9】本発明の第6の実施の形態に係わるSMD型L
EDの断面図である。
FIG. 9 shows an SMD type L according to a sixth embodiment of the present invention.
It is sectional drawing of ED.

【図10】本発明の第7の実施の形態に係わるSMD型
LEDの断面図である。
FIG. 10 is a cross-sectional view of an SMD LED according to a seventh embodiment of the present invention.

【図11】本発明に係わる放熱板の配置を示す平面図で
ある。
FIG. 11 is a plan view showing an arrangement of a heat sink according to the present invention.

【図12】従来のSMD型LEDの斜視図である。FIG. 12 is a perspective view of a conventional SMD type LED.

【図13】一般的なLEDの電流と発熱との関係を示す
グラフである。
FIG. 13 is a graph showing a relationship between current and heat generation of a general LED.

【図14】LED素子の電極構造を示す斜視図である。FIG. 14 is a perspective view showing an electrode structure of the LED element.

【図15】図14のLED素子を絶縁基板にワイヤボン
ディング方式で実装した状態を示す部分拡大断面図であ
る。
FIG. 15 is a partially enlarged cross-sectional view showing a state where the LED element of FIG. 14 is mounted on an insulating substrate by a wire bonding method.

【図16】他のLED素子の電極構造を示す斜視図であ
る。
FIG. 16 is a perspective view showing an electrode structure of another LED element.

【図17】図16のLED素子を絶縁基板にノンワイヤ
ボンディング方式で実装した状態を示す部分拡大断面図
である。
17 is a partially enlarged cross-sectional view showing a state where the LED element of FIG. 16 is mounted on an insulating substrate by a non-wire bonding method.

【符号の説明】 1 絶縁基板 2 上面電極 2a 一方の上面電極 2b 他方の上面電極 3 下面電極 4 側面電極 5 LED素子 5d LED素子の一方の電極 5e LED素子の他方の電極 6 ボンディングワイヤ 7 封止樹脂 9 ダイボンドエリア 10 放熱板 11 導電性接着剤 11a 半田 12、12A、12B、12C、12D、12E、12
F SMD型LED (b) 従来のSMD型LEDの輝度曲線 (c) 本発明のSMD型LEDの輝度曲線 δIv 放熱効果による輝度上昇分
[Description of Signs] 1 Insulating substrate 2 Upper electrode 2a One upper electrode 2b The other upper electrode 3 Lower electrode 4 Side electrode 5 LED element 5d One electrode of LED element 5e The other electrode of LED element 6 Bonding wire 7 Sealing Resin 9 Die bond area 10 Heat sink 11 Conductive adhesive 11a Solder 12, 12A, 12B, 12C, 12D, 12E, 12
F SMD LED (b) Luminance curve of conventional SMD LED (c) Luminance curve of SMD LED of the present invention δIv Increase in luminance due to heat dissipation effect

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 絶縁基板の上面端部に対向する一対の上
面電極を設け、該一対の上面電極は、それぞれその裏面
に下面電極と、その側面に、前記上面電極及び前記下面
電極と連なる側面電極を形成して、前記一方の上面電極
にLED素子の一方の電極を、他方の上面電極にLED
素子の他方の電極をそれぞれ接続し、樹脂封止してなる
SMD型LEDにおいて、前記一対の上面電極の中、少
なくともいづれかの上面電極上に導電性部材よりなる放
熱板を固着したことを特徴とするSMD型LED。
1. A pair of upper surface electrodes facing an upper surface end of an insulating substrate, wherein each of the pair of upper surface electrodes has a lower surface electrode on a back surface thereof and a side surface connected to the upper surface electrode and the lower surface electrode on a side surface thereof. An electrode is formed, one electrode of the LED element is provided on the one upper electrode, and the LED is provided on the other upper electrode.
In the SMD type LED in which the other electrodes of the element are connected to each other and sealed with a resin, a radiator plate made of a conductive member is fixed on at least one of the upper electrodes among the pair of upper electrodes. SMD LED.
【請求項2】 前記一方の上面電極上に放熱板を固着
し、該放熱板上にLED素子の一方の電極を、他方の上
面電極上にLED素子の他方の電極をそれぞれ接続した
ことを特徴とする請求項1記載のSMD型LED。
2. A radiator plate is fixed on the one upper surface electrode, and one electrode of the LED element is connected on the radiator plate, and the other electrode of the LED element is connected on the other upper surface electrode. The SMD type LED according to claim 1, wherein
【請求項3】 前記一方の上面電極上のダイボンドエリ
ア周辺を含む領域に前記放熱板を固着し、該放熱板上に
LED素子をダイボンド実装し、他方の上面電極上にボ
ンディングワイヤを接続したことを特徴とする請求項1
記載のSMD型LED。
3. The heat sink is fixed to a region including the periphery of a die bond area on the one upper electrode, an LED element is die-bonded on the heat sink, and a bonding wire is connected on the other upper electrode. Claim 1 characterized by the following:
The described SMD type LED.
【請求項4】 前記一方の上面電極上に前記放熱板を固
着すると共に、前記ダイボンドエリア周辺を含む上面電
極上にLED素子をダイボンドし、他方の上面電極上に
ボンディングワイヤを接続したことを特徴とする請求項
1記載のSMD型LED。
4. The heat sink is fixed on the one upper electrode, an LED element is die-bonded on the upper electrode including the periphery of the die bonding area, and a bonding wire is connected on the other upper electrode. The SMD type LED according to claim 1, wherein
【請求項5】 前記一対の上面電極の中、少なくともい
づれかの上面電極上に前記放熱板を固着し、前記一方の
上面電極上に直接LED素子の一方の電極を、他方の上
面電極上にLED素子の他方の電極をそれぞれ接続した
ことを特徴とする請求項1記載のSMD型LED。
5. The heat sink is fixed on at least one of the upper electrodes of the pair of upper electrodes, one electrode of the LED element is directly disposed on the one upper electrode, and the LED is disposed on the other upper electrode. The SMD type LED according to claim 1, wherein the other electrodes of the element are connected to each other.
【請求項6】 前記一対の上面電極上にそれぞれ前記放
熱板を固着し、該一方の放熱板上にLED素子の一方の
電極を、他方の放熱板上にLED素子の他方の電極をそ
れぞれ接続したことを特徴とする請求項1記載のLED
素子。
6. The heat sink is fixed to each of the pair of upper electrodes, and one electrode of the LED element is connected to the one heat sink, and the other electrode of the LED element is connected to the other heat sink. The LED according to claim 1, wherein
element.
JP11865497A 1997-04-23 1997-04-23 SMD type LED Expired - Lifetime JP3856250B2 (en)

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Application Number Priority Date Filing Date Title
JP11865497A JP3856250B2 (en) 1997-04-23 1997-04-23 SMD type LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11865497A JP3856250B2 (en) 1997-04-23 1997-04-23 SMD type LED

Publications (2)

Publication Number Publication Date
JPH10303464A true JPH10303464A (en) 1998-11-13
JP3856250B2 JP3856250B2 (en) 2006-12-13

Family

ID=14741920

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3856250B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002084749A3 (en) * 2001-04-10 2003-03-13 Osram Opto Semiconductors Gmbh Conductor frame and housing for a radiation-emitting component, radiation emitting component and method for producing the same
KR20030027277A (en) * 2001-09-28 2003-04-07 은희철 Illuminating Glass
WO2003028119A3 (en) * 2001-09-25 2003-12-04 Kelvin Shih Light emitting diode with integrated heat dissipater
JP2005175436A (en) * 2003-10-06 2005-06-30 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
WO2005083807A1 (en) * 2004-02-27 2005-09-09 Luxpia Co., Ltd. A pcb-mounted radiator and an led package using the pcb, and the manufacturing method thereof
US7078738B2 (en) 2003-02-12 2006-07-18 Toyoda Gosei Co., Ltd. Light-emitting device
JP2006237464A (en) * 2005-02-28 2006-09-07 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
KR100656662B1 (en) 2006-01-04 2006-12-11 엘지이노텍 주식회사 Light emitting device package and manufacturing method thereof
WO2007099796A1 (en) * 2006-02-22 2007-09-07 Nippon Sheet Glass Company, Limited. Light emitting unit, lighting apparatus and image reading apparatus
JP2008041650A (en) * 2006-07-10 2008-02-21 Toshiba Lighting & Technology Corp Lighting system
US7420216B2 (en) 2003-04-16 2008-09-02 Pearl Lamp Works, Ltd. Reflection type light-emitting diode device
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WO2002084749A3 (en) * 2001-04-10 2003-03-13 Osram Opto Semiconductors Gmbh Conductor frame and housing for a radiation-emitting component, radiation emitting component and method for producing the same
US8097937B2 (en) 2001-04-10 2012-01-17 Osram Ag Leadframe and housing for radiation-emitting component, radiation-emitting component, and a method for producing the component
CN100359702C (en) * 2001-04-10 2008-01-02 奥斯兰姆奥普托半导体有限责任公司 Conductor frame for a radiation-emitting component, radiation emitting component and method for producing the same
WO2003028119A3 (en) * 2001-09-25 2003-12-04 Kelvin Shih Light emitting diode with integrated heat dissipater
KR20030027277A (en) * 2001-09-28 2003-04-07 은희철 Illuminating Glass
US7078738B2 (en) 2003-02-12 2006-07-18 Toyoda Gosei Co., Ltd. Light-emitting device
US7420216B2 (en) 2003-04-16 2008-09-02 Pearl Lamp Works, Ltd. Reflection type light-emitting diode device
JP2005175436A (en) * 2003-10-06 2005-06-30 Semiconductor Energy Lab Co Ltd Semiconductor device and its manufacturing method
US8481370B2 (en) 2003-10-06 2013-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4679106B2 (en) * 2003-10-06 2011-04-27 株式会社半導体エネルギー研究所 Semiconductor device
WO2005083807A1 (en) * 2004-02-27 2005-09-09 Luxpia Co., Ltd. A pcb-mounted radiator and an led package using the pcb, and the manufacturing method thereof
JP2006237464A (en) * 2005-02-28 2006-09-07 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
KR100656662B1 (en) 2006-01-04 2006-12-11 엘지이노텍 주식회사 Light emitting device package and manufacturing method thereof
WO2007099796A1 (en) * 2006-02-22 2007-09-07 Nippon Sheet Glass Company, Limited. Light emitting unit, lighting apparatus and image reading apparatus
JPWO2007099796A1 (en) * 2006-02-22 2009-07-16 日本板硝子株式会社 Light emitting unit, illumination device, and image reading device
JP2008041650A (en) * 2006-07-10 2008-02-21 Toshiba Lighting & Technology Corp Lighting system
KR101468961B1 (en) * 2008-08-29 2014-12-05 삼성전자주식회사 Light emitting device and backlight unit comprising the same

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