JPH10303148A5 - - Google Patents

Info

Publication number
JPH10303148A5
JPH10303148A5 JP1998051650A JP5165098A JPH10303148A5 JP H10303148 A5 JPH10303148 A5 JP H10303148A5 JP 1998051650 A JP1998051650 A JP 1998051650A JP 5165098 A JP5165098 A JP 5165098A JP H10303148 A5 JPH10303148 A5 JP H10303148A5
Authority
JP
Japan
Prior art keywords
substrate
titanium nitride
edge
amount
support pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998051650A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10303148A (ja
JP4881497B2 (ja
Filing date
Publication date
Priority claimed from US08/811,818 external-priority patent/US5789028A/en
Application filed filed Critical
Publication of JPH10303148A publication Critical patent/JPH10303148A/ja
Publication of JPH10303148A5 publication Critical patent/JPH10303148A5/ja
Application granted granted Critical
Publication of JP4881497B2 publication Critical patent/JP4881497B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP05165098A 1997-03-04 1998-03-04 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置 Expired - Fee Related JP4881497B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US811818 1997-03-04
US08/811,818 US5789028A (en) 1997-03-04 1997-03-04 Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009223007A Division JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Publications (3)

Publication Number Publication Date
JPH10303148A JPH10303148A (ja) 1998-11-13
JPH10303148A5 true JPH10303148A5 (https=) 2005-09-02
JP4881497B2 JP4881497B2 (ja) 2012-02-22

Family

ID=25207680

Family Applications (2)

Application Number Title Priority Date Filing Date
JP05165098A Expired - Fee Related JP4881497B2 (ja) 1997-03-04 1998-03-04 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置
JP2009223007A Pending JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009223007A Pending JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Country Status (2)

Country Link
US (1) US5789028A (https=)
JP (2) JP4881497B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087259A (en) * 1996-06-24 2000-07-11 Hyundai Electronics Industries Co., Ltd. Method for forming bit lines of semiconductor devices
US6071562A (en) * 1998-05-07 2000-06-06 Lsi Logic Corporation Process for depositing titanium nitride films
SG87084A1 (en) * 1999-02-09 2002-03-19 Applied Materials Inc Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
WO2003064718A2 (en) * 2002-01-29 2003-08-07 Sulzer Metco (Us) Inc. Method for selectively coating a portion of a substrate with a gas-carried substance
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
JP4520717B2 (ja) * 2003-09-24 2010-08-11 キヤノンアネルバ株式会社 薄膜形成方法
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US10468264B2 (en) 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
KR102935543B1 (ko) * 2019-07-17 2026-03-05 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
JP2022544221A (ja) 2019-08-16 2022-10-17 ラム リサーチ コーポレーション ウエハ内の様々な反りを補償するために空間を調整する堆積

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
EP0732731A3 (en) * 1995-03-13 1997-10-08 Applied Materials Inc Treatment of a titanium nitride layer to improve resistance to higher temperatures

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