JPH10303148A5 - - Google Patents

Info

Publication number
JPH10303148A5
JPH10303148A5 JP1998051650A JP5165098A JPH10303148A5 JP H10303148 A5 JPH10303148 A5 JP H10303148A5 JP 1998051650 A JP1998051650 A JP 1998051650A JP 5165098 A JP5165098 A JP 5165098A JP H10303148 A5 JPH10303148 A5 JP H10303148A5
Authority
JP
Japan
Prior art keywords
substrate
titanium nitride
edge
amount
support pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998051650A
Other languages
English (en)
Japanese (ja)
Other versions
JP4881497B2 (ja
JPH10303148A (ja
Filing date
Publication date
Priority claimed from US08/811,818 external-priority patent/US5789028A/en
Application filed filed Critical
Publication of JPH10303148A publication Critical patent/JPH10303148A/ja
Publication of JPH10303148A5 publication Critical patent/JPH10303148A5/ja
Application granted granted Critical
Publication of JP4881497B2 publication Critical patent/JP4881497B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP05165098A 1997-03-04 1998-03-04 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置 Expired - Fee Related JP4881497B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/811,818 US5789028A (en) 1997-03-04 1997-03-04 Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride
US811818 1997-03-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009223007A Division JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Publications (3)

Publication Number Publication Date
JPH10303148A JPH10303148A (ja) 1998-11-13
JPH10303148A5 true JPH10303148A5 (https=) 2005-09-02
JP4881497B2 JP4881497B2 (ja) 2012-02-22

Family

ID=25207680

Family Applications (2)

Application Number Title Priority Date Filing Date
JP05165098A Expired - Fee Related JP4881497B2 (ja) 1997-03-04 1998-03-04 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置
JP2009223007A Pending JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009223007A Pending JP2010077534A (ja) 1997-03-04 2009-09-28 化学蒸着法により窒化チタンを基板に蒸着させる方法及び装置

Country Status (2)

Country Link
US (1) US5789028A (https=)
JP (2) JP4881497B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087259A (en) * 1996-06-24 2000-07-11 Hyundai Electronics Industries Co., Ltd. Method for forming bit lines of semiconductor devices
US6071562A (en) * 1998-05-07 2000-06-06 Lsi Logic Corporation Process for depositing titanium nitride films
JP2000286215A (ja) * 1999-02-09 2000-10-13 Applied Materials Inc 低減された温度で窒化チタンの金属有機化学気相堆積をする方法
US6468604B1 (en) 1999-03-17 2002-10-22 Anelva Corporation Method for manufacturing a titanium nitride thin film
WO2003064718A2 (en) * 2002-01-29 2003-08-07 Sulzer Metco (Us) Inc. Method for selectively coating a portion of a substrate with a gas-carried substance
KR100534209B1 (ko) * 2003-07-29 2005-12-08 삼성전자주식회사 반도체소자 제조용 화학기상증착 공정설비
JP4520717B2 (ja) * 2003-09-24 2010-08-11 キヤノンアネルバ株式会社 薄膜形成方法
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US10468264B2 (en) 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
KR102935543B1 (ko) * 2019-07-17 2026-03-05 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
WO2021034508A1 (en) 2019-08-16 2021-02-25 Lam Research Corporation Spatially tunable deposition to compensate within wafer differential bow

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
EP0732731A3 (en) * 1995-03-13 1997-10-08 Applied Materials Inc Treatment of a titanium nitride layer to improve resistance to higher temperatures

Similar Documents

Publication Publication Date Title
JPH10303148A5 (https=)
TW200728495A (en) Method of deposite thin film with CVD reactor and the gas inlet element for a CVD reactor
KR20030042614A (ko) Ｃｖｄ 장치의 멀티섹터 평판형 샤워헤드
WO2001086034A3 (en) Modified susceptor for use in chemical vapor deposition process
DE50302862D1 (de) Vorrichtung für CVD-Beschichtungen
WO2003065424A3 (en) Apparatus for cyclical deposition of thin films
WO2000016377A3 (en) Method for forming a three-component nitride film containing metal and silicon
TNSN07064A1 (en) Atmospheric pressure chemical vapor deposition
WO2003028069A3 (en) Method for cyclic cvd
WO2003019634A1 (en) Purging method for semiconductor production device and production method for semiconductor device
WO2003031679A3 (en) Method for depositing metal layers employing sequential deposition techniques
DE60027401D1 (de) Radikal-unterstützte sequentielle gasphasenabcheidung
TW362118B (en) Method for depositing amorphous SiNC coatings
TW200511394A (en) Alkyl push flow for vertical flow rotating disk reactor
TW200634976A (en) Method for forming a multiple layer passivation film and a device incorporating the same
US20050241580A1 (en) Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas
KR950000922A (ko) 플라즈마 화학 기상 증착법
WO2006036865A3 (en) Deposition of ruthenium metal layers in a thermal chemical vapor deposition process
JP2002176047A5 (https=)
RU98119152A (ru) Способ получения гомоэпитаксиальной алмазной тонкой пленки и устройство для его осуществления
DE60326979D1 (de) Atomschichtenabscheidungsverfahren und vorrichtung
JP2001064763A5 (https=)
TW326100B (en) Method for forming salicides
JP2004513243A (ja) ガス流により回転支持され回転駆動される基板保持器を備えたｃｖｄ反応炉
JP2006519482A5 (https=)