JPH10293011A - Method and device for evaluating anisotropic thin film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and a device for evaluating anisotropic thin film by which the anisotropic dielectric constant and film thickness of a fine part and the tilt of main dielectric constant coordinate can be evaluated in even a sample in which the main dielectric constant coordinate is inclined against the sample surface or it is vertical to the sample surface. SOLUTION: A uniformly polarized light is converged by a lens 54 to be focused on the sample surface, and the incident angle of S and P polarization element intensity of reflection light enlarged by the lens 54 and the polarization dependency of incident light, or the incident angle of polarized reflection light and the polarization dependency of incident light are measured by both an analyzer (polarizing element) 57 and a 1/4 wavelength plate 56 or only an analyzer (polarizing element) 57, and one-dimensional or two-dimensional position sensitive optical detector 58. Then, in even a sample in which the main dielectric constant coordinate is inclined against the sample surface, the anisotropic dielectric constant and film thickness of fine part and the inclination of main dielectric constant coordinate can be determined.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION In a liquid crystal display device, a method for evaluating an anisotropic thin film and a film having optical anisotropy by aligning molecules, such as a liquid crystal alignment film for giving initial alignment to liquid crystal molecules, and the like. It relates to an evaluation device.

[0002]

2. Description of the Related Art As a method for evaluating anisotropic thin films, a method for measuring the incident angle dependence of the intensity of reflected light generated when a plurality of wavelengths are incident (see Isobe, "Method for measuring refractive index and thickness of anisotropic thin films") JP-A-05-005699, Isobe, "Method for Measuring Refractive Index and Film Thickness of Anisotropic Thin Film"
No. 9333), a method of measuring from the dependence of the reflected light intensity on the incident angle and the incident azimuth (Isobe “Method of measuring the refractive index and thickness of a thin film”, Japanese Patent Application Laid-Open No. 03-066563). To efficiently measure the dependence of the intensity of the reflected light by the incident light having only the S-polarized component and the P-polarized component on the incident angle and the incident azimuth (Ukawa "Optical constant measuring method and measuring apparatus" Kaihei 08-15
No. 2307), the sample is rotated in a plane, and the dielectric constant, the thickness and the direction of the main dielectric constant coordinate of the oriented portion, and the dielectric constant and the thickness of the non-oriented portion are determined from the incident azimuth dependence of the polarization state of the reflected light. Method (Hirosawa "Evaluation method and evaluation apparatus for anisotropic thin films", Japanese Patent Application No. 08)
No. 49320) has been proposed.

In particular, linearly polarized incident light is condensed using a lens, and the dependence of the intensity of the reflected light by the incident light having only the S-polarized component and only the P-polarized component on the incident angle and the incident direction is efficiently measured. The method (Ukawa "Optical constant measuring method and measuring apparatus", Japanese Patent Application Laid-Open No. 08152307) has an excellent feature of having high spatial resolution. Normally, in order to increase the spatial resolution by reducing the area on the sample surface to which light is applied, incident light is collected by a lens. However, when the light is condensed by a lens, the incident angle of the light beam with respect to the sample is dispersed, so that it is impossible to accurately measure the intensity of the reflected light and the dependence of the polarization state on the incident angle, so that the spatial resolution is limited.
On the other hand, in the method of condensing incident light with a lens, as shown in FIG. 20, light passing through a portion near the periphery of the lens has a larger incident angle with respect to the sample, so that a large numerical aperture is required. By using a lens with a short focal length, a large angle dispersion is achieved for the incident angle, and the reflected light intensity profile measured by a one-dimensional or two-dimensional detector after the reflected light is made parallel by the same lens is reflected light intensity. By using a detector with high position resolution to show the incident angle dependence of
Even in a very small area, it is possible to measure the incident angle dependence of the reflected light intensity with high accuracy, and realize a high spatial resolution.

This method utilizes the fact that the incident angle dependence of the reflection intensity of the S-wave component and the P-wave component of the incident light depends on the refractive index and the thickness of the film when determining the refractive index and the thickness of the thin film. Then, linearly polarized light is incident on the condenser lens. At this time, light that has entered the lens in a radial direction parallel to the polarization direction has only a P-polarized component when entering the sample, and light that has entered the sample in a radial direction perpendicular to this has an S-polarized component. Have. Thus, by measuring the reflected light intensities in these two directions, it is possible to measure the incident angle dependence of the reflected light intensity of the S-polarized light component and the P-polarized light component. If the film has anisotropy, by rotating the polarization direction of the linearly polarized light of the incident light, S
The incident azimuth dependency is measured by changing the azimuths of the polarized light and the P-polarized component.

When the thin film is isotropic, and when two axes of the three principal permittivity coordinate axes are parallel to the film surface (that is, when one axis is perpendicular to the film surface) even in the anisotropic thin film, S When the light of the polarized light component is incident, only the S-polarized light component is obtained, and when the light of the P-polarized light component is incident, reflected light of only the P-polarized light component is obtained.
No function of measuring the polarization state of the reflected light is required. However, when the main dielectric constant coordinate system is inclined with respect to the film surface, the reflected light has both the S-polarized light component and the P-polarized light component.

The method of determining the anisotropic dielectric constant and the film thickness by rotating the sample in-plane and measuring the incident azimuth dependence of the polarization state of the reflected light is based on the fact that the main dielectric constant coordinate is located on the film surface. In contrast, an anisotropic film having a slope can determine the anisotropic dielectric constant, the film thickness, and the slope of the main dielectric constant with respect to the film surface, but it is difficult to improve the spatial resolution. Also,
When the optical axis is perpendicular to the sample surface in uniaxial anisotropy, the anisotropic dielectric constant and film thickness cannot be determined because the incident azimuth anisotropy is not observed.

[0007]

Generally, since the complex dielectric constant of a substance has wavelength dependence, the anisotropic refractive index (dielectric constant) is determined from the measurement of the incident angle dependence of the reflected light intensity at a plurality of wavelengths.
Is difficult to apply except for a sample whose wavelength dispersion characteristic of dielectric constant is known.

A method of obtaining an anisotropic dielectric constant and a film thickness of a sample from a measurement of the dependence of the reflected light intensity on an incident angle and an incident direction, and a method of condensing incident light using a lens have been proposed. In the case where the S-wave component main permittivity coordinate is inclined with respect to the film surface, the anisotropic permittivity of the film cannot be accurately determined because the reflected light includes both the S-polarized component and the P-polarized component. Further, in the conventional method, it is not possible to obtain an anisotropic dielectric constant of a sample having a two-layer structure of an anisotropic portion and an isotropic portion having unknown thickness, such as a liquid crystal alignment film subjected to a rubbing process. Can not.

On the other hand, the method of determining the anisotropic dielectric constant from the dependence of the polarization state of the reflected light on the incident azimuth is based on the isotropic portion having an unknown thickness, such as a rubbed liquid crystal alignment film. It is possible to measure the anisotropic dielectric constant of the sample having the two-layer structure of the part, the thickness of each part, and the inclination of the main dielectric constant coordinate with respect to the surface. However, when the incident light is condensed, a minute portion cannot be evaluated because a distribution occurs at the incident angle. Further, in the case of a film whose optical axis is perpendicular to the surface, since there is no dependency on the incident azimuth, the anisotropic dielectric constant of the film cannot be determined.

The present invention condenses light having a certain polarization state using a lens so that the light is focused on the sample surface, and the incident angle dependence of the S and P polarization component intensities of the reflected light expanded by the same lens; Alternatively, the above problem is solved by measuring the incident angle dependence of the polarization state of reflected light using a polarizer, a quarter-wave plate, and a one-dimensional or two-dimensional position-sensitive photodetector. Provided is a method and an apparatus capable of evaluating the anisotropic dielectric constant, film thickness, and inclination of the main dielectric constant of a minute part even for a sample having a tilt with respect to the sample surface and a sample having a main dielectric constant perpendicular to the sample surface. It is intended to be.

That is, an object of the present invention is to provide an anisotropic dielectric constant and a film thickness of a minute portion for a sample whose main dielectric constant is inclined with respect to the sample surface and a sample whose main dielectric constant is perpendicular to the sample surface. An object of the present invention is to provide an anisotropic thin film evaluation method and an anisotropic thin film evaluation device capable of evaluating the inclination of a dielectric constant coordinate.

[0012]

The anisotropic thin film evaluation method according to the present invention is directed to a method of condensing incident light having a monochromatic and constant polarization state on a thin film sample surface, and converting reflected light from the thin film sample into parallel rays. And the dependence of the S-polarized light component intensity and the P-polarized light component intensity of the reflected light on the incident angle and the incident azimuth are determined by using a one-dimensional or two-dimensional detector and a polarizer located upstream of the detector. The thin film sample is measured by rotating it in-plane around the measurement point, and the dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant coordinates with respect to the thin film sample surface, and the dielectric constant of the isotropic layer are measured. Determine the rate and thickness.

An anisotropic thin-film evaluation apparatus according to the present invention comprises the same lens for condensing incident light of a monochromatic color having a certain polarization state on a thin-film sample surface and for converting reflected light from the thin-film sample into parallel rays. A one-dimensional or two-dimensional detector, a polarizer positioned upstream of the detector, and a mechanism for rotating the thin film sample in-plane about the measurement point, and rotating the detector, the polarizer, and the plane. The dielectric constant and thickness of the anisotropic layer of the thin film sample and the surface of the thin film sample in the main permittivity coordinates are determined from the dependence of the S-polarized light component intensity and the P-polarized light component intensity on the incident angle and the incident direction measured by the mechanism. And the dielectric constant and thickness of the isotropic layer.

In the method for evaluating an anisotropic thin film according to the present invention, the same lens is used to converge incident light having a monochromatic and constant polarization state on the surface of the thin film sample and to convert reflected light from the thin film sample into parallel rays. In this case, the dependence of the polarization state of the reflected light on the incident angle and the incident direction is determined by using a one-dimensional or two-dimensional detector, a quarter-wave plate, and a polarizer to rotate the thin film sample in-plane around the measurement point. The dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant with respect to the surface of the thin film sample, and the dielectric constant and thickness of the isotropic layer are determined.

The anisotropic thin-film evaluation apparatus according to the present invention is a single lens for condensing incident light of a monochromatic color having a certain polarization state on the surface of the thin-film sample and converting the reflected light from the thin-film sample into parallel rays. A one-dimensional or two-dimensional detector, a quarter-wave plate, a polarizer, and a mechanism for in-plane rotation of the thin film sample around the measurement point. The dielectric constant and thickness of the anisotropic layer of the thin film sample and the principal permittivity coordinates with respect to the surface of the thin film sample are determined from the dependence of the polarization state of the reflected light on the incident angle and the incident direction measured by the element and the in-plane rotation mechanism. Determine the tilt angle and the dielectric constant and thickness of the isotropic layer.

In the anisotropic thin film evaluation method of the present invention, the same lens is used to converge monochromatic linearly polarized incident light on the thin film sample surface and to convert reflected light from the thin film sample into parallel rays. Using a one-dimensional or two-dimensional detector, the polarization direction of the incident light and the direction of the detector are rotated in synchronization with the incident angle and the incident azimuth of the S-polarized light component intensity and the P-polarized light component intensity. The dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant coordinate with respect to the thin film sample surface, and the dielectric constant and thickness of the isotropic layer are determined.

The anisotropic thin-film evaluation apparatus of the present invention includes the same lens for condensing monochromatic linearly polarized incident light on the thin-film sample surface and converting the reflected light from the thin-film sample into parallel rays.
A two-dimensional or two-dimensional detector, and a mechanism for rotating the polarization direction of the incident light and the direction of the detector in synchronization with each other, and measuring the reflected light measured by the detector and the mechanism for rotating in synchronization. From the dependency of the S-polarized component intensity and the P-polarized component intensity on the incident angle and the incident azimuth, the dielectric constant and thickness of the anisotropic layer of the thin film sample,
The inclination angle of the main dielectric constant with respect to the thin film sample surface and the dielectric constant and thickness of the isotropic layer are determined.

In the method for evaluating anisotropic thin film of the present invention, the same lens is used to converge monochromatic linearly polarized incident light on the surface of the thin film sample and convert the reflected light from the thin film sample into parallel rays. The dependence of the polarization state of the light on the incident angle and the incident direction is synchronized by using a one-dimensional or two-dimensional detector, a quarter-wave plate, and a polarizer to synchronize the polarization direction of the incident light with the direction of the detector. Then, the dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant with respect to the surface of the thin film sample, and the dielectric constant and thickness of the isotropic layer are determined.

The anisotropic thin-film evaluation apparatus of the present invention comprises the same lens for condensing monochromatic, linearly polarized incident light on the thin-film sample surface and converting reflected light from the thin-film sample into parallel rays.
A two-dimensional detector, a quarter-wave plate, a polarizer, and a mechanism for rotating the polarization direction of incident light and the direction of the detector in synchronization with each other. Measured by the mechanism that rotates in synchronization with the polarizer, from the incident angle and incident direction dependence of the polarization state of the reflected light, the dielectric constant and thickness of the anisotropic layer of the thin film sample, and the main dielectric constant coordinates The tilt angle with respect to the thin film sample surface and the dielectric constant and thickness of the isotropic layer are determined.

In the method for evaluating anisotropic thin film of the present invention, the same lens is used to converge monochromatic circularly polarized incident light on the surface of the thin film sample and convert the reflected light from the thin film sample into parallel rays. Using a one-dimensional or two-dimensional detector, the polarization direction of the incident light and the direction of the detector are rotated in synchronization with the incident angle and the incident azimuth of the S-polarized light component intensity and the P-polarized light component intensity. The dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant coordinate with respect to the thin film sample surface, and the dielectric constant and thickness of the isotropic layer are determined.

The anisotropic thin-film evaluation apparatus of the present invention comprises the same lens for condensing monochromatic circularly polarized incident light on the thin-film sample surface and converting reflected light from the thin-film sample into parallel rays. A two-dimensional or two-dimensional detector, and a mechanism for rotating the polarization direction of the incident light and the direction of the detector in synchronization with each other,
S of the reflected light measured by the synchronously rotating mechanism
From the dependence of the polarization component intensity and the P polarization component intensity on the incident angle and the incident direction, the dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant coordinates with respect to the thin film sample surface, and the dielectric constant of the isotropic layer And determine the thickness.

In the method of evaluating anisotropic thin film of the present invention, the same lens is used to converge monochromatic circularly polarized incident light on the surface of the thin film sample and convert the reflected light from the thin film sample into parallel rays. The dependence of the polarization state of light on the incident angle and the incident direction is measured using a rotating one-dimensional or two-dimensional detector, a quarter-wave plate, and a polarizer, and the dielectric constant of the anisotropic layer of the thin film sample is measured. The thickness, the inclination angle of the main dielectric constant coordinate with respect to the thin film sample surface, and the dielectric constant and thickness of the isotropic layer are determined.

The anisotropic thin film evaluation apparatus according to the present invention comprises the same lens for condensing monochromatic circularly polarized incident light on the thin film sample surface and converting the reflected light from the thin film sample into a parallel light beam, A one-dimensional or two-dimensional detector, a quarter-wave plate,
A polarizer, and the dielectric constant and thickness of the anisotropic layer of the thin film sample are determined from the dependence of the polarization state of the reflected light on the incident angle and the incident azimuth measured by the detector, the quarter-wave plate, and the polarizer. The inclination angle of the main dielectric constant with respect to the surface of the thin film sample and the dielectric constant and thickness of the isotropic layer are determined.

That is, according to the present invention, light having a certain polarization state is condensed by using a lens so as to be focused on the sample surface, and the incident angles of the S and P polarization component intensities of the reflected light expanded by the same lens. And the polarization state dependence of the incident light, or the incident angle and the polarization state dependence of the polarization state of the reflected light, of both the polarizer and the quarter-wave plate, or only the polarizer, and the one-dimensional or two-dimensional The above problem is solved by measuring using a position-sensitive photodetector, and the anisotropic dielectric constant and film thickness of the microscopic portion, even when the main dielectric constant coordinate is inclined with respect to the sample surface, the main dielectric constant coordinate. A method and apparatus for determining a tilt.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION The polarization state of reflected light is 4 × 4 matrix (Bellman et al., Physical Review Letters, Vol. 25, No. 5).
Page 77, 1970 W. Berrman a
nd T. J. Scheffer, Physcal R
view Letters, 25, 577 (197
0)). According to this method, when light is incident on the sample at an incident angle β, the incident light is Φ _I , Φ _r , Φ _t ,
When the state of the reflected light and the state of the transmitted light to the substrate are expressed, the relationship established between each of them is the 4 × 4 matrix of the alignment layer and the film thickness L.
Φ _t = exp (id ₁ L ₁ ) exp (id ₂ L ₂ ) (Φ ₂ , d ₂ , 4 × 4 matrix of non-oriented layer and film thickness L ₁ , d _1
I + Φ _r ). In _{L 1 △ 14, △ 24,} △ 31, △ 32, △ 33 and △ ₄₄ is 0, the remaining _{△ 11 = - (ε e -ε} o) sinβsinθcosθsinφ (ε e cos
² θ + ε _o sin ² θ) Δ ₁₂ = 1−sin ² β / (ε _e cos ² θ + ε _o sin ² θ) Δ ₁₃ = Δ ₄₂ = (ε _e −ε _o ) sin β sin θ cos θ cos φ (ε _e
cos ² θ + ε _o sin ² θ) △ ₂₁ = ε _o ｛ε _e − (ε _e −ε _o ) sin ² θ cos ² φ｝ / (ε
^{_{e cos 2 θ + ε o sin}} 2 θ) △ 22 = -ε e (ε e -ε o) sin 2 θcos 2 φ / (ε e cos 2 θ
+ Ε _o sin ² θ) △ ₂₃ = △ ₄₁ = −ε _o (ε _e −ε _o ) sin θ cos φ sin φ /
(Ε _e cos ² θ + ε _o sin ² θ) △ ₃₄ = 1 △ ₄₃ = ε _o ｛ε _e − (ε _e −ε _o ) sin ² θsin ² φ｝ / (ε
_e cos ² θ + ε _o sin ² θ) −sin ² β. In this equation, ε _e and ε _o are the permittivity expressed in the main permittivity coordinate system, θ is the inclination angle of the main permittivity coordinate with respect to the film surface, and φ is the in-plane azimuth of the incident light. L ₂ is also △ ₁₁ ,
△ _22, △ _13, △ ₂₃ becomes 0, and ^{_{△ 12 = 1-sin 2 β}} / ε △ 21 = ε △ 34 = 1 △ 43 = ε-sin 2 β.

By solving the above equation, the polarization state of the reflected light can be obtained. From this equation, the phase difference and amplitude of the S wave component parallel to the sample surface and the P wave component perpendicular to the traveling direction of the light and orthogonal to the S wave component change before and after reflection of the light incident on the sample, It can be seen that the polarization state and intensity of the reflected light represented by the amplitude of the S-wave component and the P-wave component and the phase difference between them depend on the incident angle, the refractive index and thickness of the film, and the refractive index of the substrate. Thus, by measuring the angle dependence of the polarization state and intensity of the reflected light, the thickness and refractive index of the sample can be determined.
To measure the film thickness and refractive index of a spatially minute part, the incident light is condensed by a lens to reduce the area of the sample surface where the incident light hits, and the reflected light is converted into a parallel beam using the lens again. The intensity profile can be measured by a position-sensitive detector, the incident angle dependence of the reflected light intensity is determined, and the film thickness and the refractive index are calculated by the BPR method. Although the conventional BPR method targets an optically isotropic thin film as a measurement target, a ４ wavelength plate and a polarizer or only a polarizer are inserted in front of the detector to reduce the S wave component of the reflected light. By measuring the intensity of the P-wave component, it is possible to measure an optically anisotropic film that generates reflected light in which the S-polarized component and the P-polarized component are mixed.

As an example, the S-polarized light generated when the light having only the S-polarized light component is incident on the anisotropic film at a specific incident angle.
When the polarization component and the P-polarization component are respectively R _ss cos (ωt) R _ps cos (ωt + △ _s ), the vibration direction of the analyzer (polarizer) placed upstream of the detector is set in the same direction as the incident light. If set to R _ss
If it is set perpendicularly, the incident angle dependency of R _ps can be measured.

As shown in FIG. 20, since the linearly polarized light is condensed by a lens to be incident light, the incident direction for providing an S-polarized component and the incident direction for providing a P-polarized component are orthogonal to each other. If the orientation of the child is adjusted to measure R _ss , the P-polarized light component R _{pp of} the reflected light generated by the incident light of the P-polarized light component can be measured at the same time using a two-dimensional detector. Similarly, simultaneous measurement of R _ps and R _sp is possible. The dielectric constants ε _e and ε _{o of the} anisotropic layer, the film thickness d ₁ , and the main dielectric constant are set so that the calculated values match the incident angle dependences of R _ss , R _sp , R _ps , and R _pp measured in this arrangement. The inclination angle θ of the coordinates with respect to the sample surface,
Although the structure of the sample can be determined by optimizing the dielectric constant ε and the thickness d ₂ of the isotropic layer, it is difficult to uniquely determine each parameter in consideration of the existence of a measurement error. Therefore, the dependency of R _ss , R _sp , R _ps , and R _{pp on} the incident azimuth is measured, and the reliability of the parameters determined by increasing the measurement values for optimization is measured. For the measurement of the incident azimuth dependence, a half-wave plate is inserted upstream of the lens used for focusing, and the optical axis is rotated so that the light of the S-polarized component and the light of the P-polarized component incident on the sample are incident. Change orientation. At this time, the direction of the one-dimensional detector is also changed in synchronization with the rotation of the half-wave plate. Obtained in this way,
A sample of the dielectric constants ε _e , ε _o , the film thickness d ₁ , and the main dielectric constant of the anisotropic layer so that the calculated values are consistent with the incident angle and incident direction dependence of R _ss , R _sp , R _ps , and R _pp. The structure of the sample is determined by optimizing the inclination angle θ with respect to the surface, the dielectric constant ε of the isotropic layer, and the film thickness d ₂ .

In the above example, instead of the analyzer (polarizer) inserted upstream of the detector, a quarter-wave plate and an analyzer (polarizer) are inserted from the upstream side, and the wave plate is rotated. From the Fourier sum obtained for the azimuth of the wave plate of the intensity of the light detected at that time, R _ss and R _ps are obtained for the azimuth where the S-wave component is incident.
In the azimuth where 成分_s and P wave components are incident, the dependence of R _sp , R _pp and the phase difference Δp on the incident angle and the incident azimuth are measured, and the dielectric value of the anisotropic layer is adjusted so that the measured value agrees with the calculated value. Rate ε _e , ε
The structure of the sample is determined by optimizing _o , the film thickness d ₁ , the inclination angle θ of the main permittivity coordinate, the dielectric constant ε of the isotropic layer, and the film thickness d ₂ . Normally, the phase difference is more sensitive to the film structure than the reflection intensity, and therefore the sensitivity is higher than when focusing only on the reflection intensity.

Embodiments of the present invention will be described below with reference to the drawings.

(First Embodiment of the Present Invention) The structure of an apparatus having a sample rotating stage according to a first embodiment of the present invention will be described with reference to FIG. 1 is a light source of 5 mW H
An e-Ne laser was used. 2 is a polarizer, 3 is a sample rotation stage, 4 is a lens used for condensing incident light and collimating reflected light, and is an Olympus microscope having a numerical aperture Na of 0.9.
A 00 × objective lens was used. The size (diameter) of the observation area at the focal point is about 1 μm, and an area at an incident angle of 0 ° to ± 66 ° can be measured. Reference numeral 5 denotes a half mirror, 6 denotes an analyzer (polarizer), 7 denotes a CCD element which is a one-dimensional photodetector arranged in a direction perpendicular to each other, and 8 temporarily stores measurement data and detects the detection intensity of each element of the detector. A numerical output device, 9 is an arithmetic device, and 10 is a sample.

The sample rotating stage 3 rotates in-plane around an axis passing through the measuring point. This apparatus temporarily stores a polarizer 2, a sample rotation stage 3, a half mirror 5, an analyzer (polarizer) 6, a CCD element 7, and measurement data based on an Olympus microscope and detects the intensity of each element of the detector. Are created by adding a modification to add a device 8 for outputting a numerical value and an arithmetic unit 9. In order to make the rotation center of the sample rotation stage 3 coincide with the focal point of the incident light and further make the rotation axis parallel to the axis of symmetry of the incident light, a glass substrate on which aluminum having a diameter of about 2 μm was deposited was used. The adjustment was completed in a state where the sum of the intensities of the reflected light from the aluminum film placed on the sample rotation stage 3 measured by the respective elements of the detector did not change with respect to the rotation, and the sample rotation stage 3 was fixed. Sample 10
Prior to the measurement, the state of the apparatus was confirmed by measuring the intensity of the reflected light from the aluminum deposition plate used here each time.

Using this apparatus, an LB film of alkylamine acid PC2 which is a polyimide raw material for vertical alignment made by Nippon Synthetic Rubber Co., Ltd. was deposited on a 1.1 mm thick glass substrate (Corning 7059). After the PC2 was spread on the water surface, the glass substrate was moved up and down at 4 cm / s in the direction perpendicular to the water surface, accumulated twice, and then heated at 200 ° C. for 3 hours in an oven to form a polyimide film. When an attempt was made to measure the thickness of this polyimide film using an ellipsometer MARY-102 made by Fibravo, the polarization state of the reflected light measured at an incident angle of 70 ° and 50 ° (△ (phase difference component), ψ
(Amplitude reflectance component), the significant difference between the polarization state of the reflected light from the glass substrate surface and the film thickness could not be determined. This is presumably because the number of accumulations is small and the film thickness is small, and the refractive index of the film is close to that of the glass substrate.

On this substrate, a cyanobiphenyl-based liquid crystal 5C
B (Merck) was deposited. In vapor deposition, a container containing a substrate and liquid crystal is placed in a vacuum container, and a liquid product container placed at the bottom of the container is heated to evaporate the liquid crystal. The substrate is held near the ceiling in the container, and the liquid crystal layer is formed by attaching the evaporated liquid crystal molecules with the vapor deposition surface (the surface on which the polyimide film is formed) facing downward. The distance between the liquid crystal container and the substrate is about 10 cm. In preparing the sample, the inside of the container was evacuated to 1.2 × 10 ⁻² mTorr by a rotary pump, and then the inlet was closed.
The temperature of the substrate was controlled by flowing hot water of 27 ° C. (300 K) through the substrate holder. The liquid crystal container was heated from room temperature to about 70 ° C. by resistance heating and held for about 2 hours.

The dependence of the polarization state of the reflected light from sample A prepared as described above on the incident direction was measured using an ellipsometer MARY-102 at an incident angle of 70 °.
At this time, the temperature of the room where the measurement was performed was set to 28 ° C. so that the deposited film became a liquid crystal phase (25 ° C. to 35 ° C.). FIG. 2 is a diagram showing the incident azimuth dependence of the phase difference component (Δ) of the reflected light from the sample A measured by the ellipsometer. FIG. 3 is a diagram showing the incident azimuth dependence of the amplitude reflectance ratio component (ψ) of the reflected light from the sample A measured by the ellipsometer. Since the liquid crystal is oriented perpendicular to the surface, no significant anisotropy is observed in both △ and 同 様 as in the isotropic film.
This measurement result was measured as an isotropic film on a glass substrate having a refractive index of 1.53. The average of △ and ψ was 7.58 ゜ and 23.82.
When the film thickness and the refractive index are obtained from ゜, the refractive index is 1.42, the film thickness is 89.4 nm, and the refractive index of the isotropic layer of the liquid crystal is 1.5.
7 and the refractive index of the liquid crystal phase such as 1.51-1.64. This is presumably because no anisotropy was observed in the polarization state of the reflected light, and the error was increased because the reflected light was treated as an isotropic film.

As described above, the state of the film cannot be correctly determined by the conventional technique. In determining the film thickness and the refractive index, the presence of the alignment film did not significantly change the state of the reflected light in the measurement of the ellipsometer before the liquid crystal deposition, and thus the presence thereof was ignored.

Sample A was measured using the apparatus of the present invention.
Also in this case, the room temperature was set to 28 ° C. At the time of measurement, the height of the sample rotation stage 3 was adjusted so that the sum of the intensities detected by the elements of the detector 7 was maximized so that the incident light was focused on the sample surface. As a result of the measurement, when the vibration direction of the analyzer (polarizer) 6 is perpendicular to the vibration direction of the incident light, no significant intensity is observed for both the S-polarized light and the P-polarized light. There was no mixing of the S-polarized component and the P-polarized component.

FIG. 4 is a graph showing the measurement results of the incident angle dependence of the R _ss component of the reflected light from the sample A. FIG. 5 is a diagram showing a measurement result of the incident angle dependence of the R _pp component of the reflected light from the sample A. In the figure, ○ and Δ indicate the measurement results from the incident azimuths orthogonal to each other, and the curve indicates the calculation results using the optimized parameters. ○ and △ are measurement results when the orientations of the sample rotation stage 3 are different from each other by 90 °. Similar to the results of the preliminary experiment using the ellipsometer, no significant incident orientation dependency is observed. In this method, since the incident direction of the S-polarized component light and the incident direction of the P-polarized component light are always 90 ° different, the data analysis combines the measurement results at positions where the sample directions differ by 90 ° from each other. Need to be done.
However, since the reflected light intensity of this sample is not only symmetrical with respect to the incident azimuth, but does not depend on the incident azimuth in the plane, it is sufficient to analyze the result measured in one azimuth. The analysis ignores the presence of the alignment film and optimizes the two anisotropic main dielectric constants and film thickness of the liquid crystal film, and the proportionality constant between the calculated and measured values, so that the calculated value matches the measured value. Was performed. In the region where the incident angle is small, not only the reflected light from the sample surface but also the reflected light from the back surface of the glass substrate is detected at the same time.
The measurement result in the range of the incident angle of 30 ° to 64 ° was optimized.
Since no in-plane anisotropy was observed, the main dielectric constant coordinate axis was perpendicular to the sample surface. As a result, the thickness of the liquid crystal layer was 73 nm, the dielectric constant in the direction perpendicular to the film surface was 2.86,
The dielectric constant parallel to the surface was determined to be 2.28. The incident angle dependence of the reflection intensity calculated from these values is shown by the solid line in the figure.

(Second Embodiment of the Present Invention) The structure of an apparatus having a function of rotating a plane of polarization of incident light using a half-wave plate according to a second embodiment of the present invention will be described. 6 will be described. 11 is a light source using a 5 mW He-Ne laser. 12 is a polarizer, 13 is a half-wave plate, 14
Is a lens used for condensing incident light and collimating reflected light, and a 100 × objective lens of an Olympus microscope having a numerical aperture Na of 0.9 was used. The size (diameter) of the observation area at the focal point is about 1
μm, and can measure a region at an incident angle of 0 ° to 66 °.
Reference numeral 15 denotes a half mirror, 16 denotes an analyzer (polarizer), and 17 denotes a one-dimensional photodetector arranged in a direction perpendicular to each other.
D element, 19 is a device for temporarily storing measurement data and numerically outputting the detected intensity of each element of the detector, 20 is a computing device, 21
Is a sample. This device is an improvement obtained by adding a half-wave plate 13 to the device according to the first embodiment of the present invention. Although the sample rotation stage according to the first embodiment of the present invention is still attached, it is not necessary for measurement, and is omitted from FIG.

Using this apparatus, on a glass substrate (Corning 7059) having a thickness of 1.1 mm, alkylamine acid PC2 as a polyimide raw material for vertical alignment and alkylamine acid PC as a raw material for polyimide for horizontal alignment made by Nippon Synthetic Rubber Co., Ltd.
An LB film was deposited from a mixture of 1 at a ratio of 9: 1. After the mixed solution was spread on the water surface, the glass substrate was moved up and down at 4 cm / s in the direction perpendicular to the water surface, accumulated twice, and then heated at 200 ° C. for 3 hours in an oven to form a polyimide film. When the film thickness of this polyimide film was measured using an ellipsometer MARY-102 made by Fibravo, the reflection was measured even when the incident angles were 70 ° and 50 °, similarly to the sample of the first embodiment of the present invention. The polarization state of light (△, ψ) was not significantly different from the polarization state of light reflected from the glass substrate surface, and the film thickness could not be determined. That is, it is concluded that the refractive index of this film is almost the same as that of the glass substrate, and the film thickness is smaller. On this substrate, a cyanobiphenyl-based liquid crystal 5CB (manufactured by Merck) was deposited by the same method as in the first embodiment of the present invention. However, the first of the present invention
The liquid crystal container was held at about 70 ° C. for about 3 hours in order to deposit a liquid crystal thicker than the sample A of the embodiment.

The dependence of the polarization state of the reflected light from sample B prepared as described above on the incident azimuth was measured using an ellipsometer MARY-102 at an incident angle of 70 °.
At this time, in order to make the deposited film have a liquid crystal phase (25 ° C. to 35 ° C.), the temperature of the room where the measurement was performed was set to 28 ° C. as in the first embodiment of the present invention. FIG. 7 is a diagram showing the incident azimuth dependence of the phase difference component (△) of the reflected light from the sample B measured by the ellipsometer. FIG. 8 is a diagram showing the incident azimuth dependency of the amplitude reflectance ratio component (ψ) of the reflected light from the sample B measured by the ellipsometer. Since the liquid crystal molecules are oriented at an angle to the surface, rotationally asymmetric anisotropy is observed for both △ and ψ. The film thickness and the anisotropic dielectric constant were determined from the average of △ and ψ measured as a uniaxial anisotropic film on a glass substrate having a refractive index of 1.53. .30, the film thickness is 58 nm, and the inclination angle is 35 °. The orientation of the liquid crystal molecules in the plane of the sample was parallel to the moving direction of the substrate when the LB film was accumulated.

Sample B was measured using the apparatus of the present invention.
Also in this case, the treasure temperature was set to 28 ° C. Perform the measurement
The adjustment of the device is the same as in the first embodiment. Ah
Liquid crystal molecules were determined by ellipsometer measurement
Orientation direction coincides with the vibration direction of the substrate when the LB film is formed.
Of the half-wave plate that controls the polarization state of the incident light
The azimuth angle is set so that the S-polarized light component is parallel to the liquid crystal orientation direction.
Position was set to 0 °. The detector of reflected light is 0 ~ ± 66 ゜
Since the light at the incident angle can be measured, the measurement of the azimuth angle dependency is 1
By changing the direction of the half-wave plate from 0 ° to 180 °
It is enough. In actual measurement, the half-wave plate is 0 °, 45 °.
Measurements were made at ゜, 90 ゜, and 135 ゜. In addition, 0 ±
Since 20 ° is affected by reflection from the back surface of the substrate, 30 °
Measured only for incident angles greater than ゜. Each incident direction
At R_ss, R_ppIndicates that the anisotropy was clearly observed
Because of the inversion symmetry of
Even so, it is difficult to determine the tilt angle accurately.
Was. -How, R_sp, R_psHas a clear anisotropy
Is suitable for determining the tilt angle, but the measured intensity is R
_ss, R_pp2 orders of magnitude less, fluctuations in the measurement data itself
Analysis accuracy cannot be improved because of the large size. Special
No significant intensity was observed at azimuth angles of 0 ° and 90 °
Was. Therefore, the determination of the film thickness and the dielectric constant is R_ss, R_ppThe main
Data to be optimized, the tilt angle is mainly 45 ° azimuth
135 ゜ R_sp, R_psFocus on parameter optimization
Done. As a result, ellipsometer observations
(Approx. 2.86, 2.30, film thickness)
Of 58.2 nm and an inclination angle of 36 °). This value
Is used, azimuth angles 0 ° and 90 °_sp, R_psIs the incident angle
Nevertheless, it becomes 0, which coincides with the measurement result. The conventional method
Reflected light intensity regardless of S-polarized component and P-polarized component
Is measured, R_sp, R_psThe effect of the presence of
30 ゜ to 64 ゜ with a slight appearance around 58 ゜
If optimization is performed within the range, the integration time (measurement time) will increase.
Optimized for high-precision measurements
R for value_sp, R_psIs not reflected so much.

FIGS. 9 and 10 show, as examples, values (solid lines) calculated from the measurement results of R _ss and R _sp and the parameters obtained as a result of optimization. FIG. 9 is a diagram showing a measurement result of the incident angle dependence of the R _ss component of the reflected light from the sample B at the incident azimuth angle of 0 °. FIG. 10 is a diagram showing a measurement result of the incident angle dependence of the R _sp component of the reflected light from the sample B at an incident azimuth angle of 135 °. ○ indicates a measurement result, and a curve indicates a calculation result using optimized parameters.

(Third Embodiment of the Present Invention) As a third embodiment of the present invention, a function of rotating the plane of polarization of incident light using a half-wave plate, and a function of polarizing reflected light. The configuration of an apparatus having a function of measuring a state will be described with reference to FIG. 31 is a light source using a 5 mW He-Ne laser. Reference numeral 32 denotes a polarizer, 33 denotes a half-wave plate, and 34 denotes a lens used for condensing incident light and collimating reflected light. A 100 × objective lens of an Olympus microscope having a numerical aperture Na of 0.9 is used. The size (diameter) of the observation area at the focal point is about 1 μm, and a region at an incident angle of 0 ° to 66 ° can be measured. 35 is a half mirror, 36 is a 1/4 wavelength plate, 37 is an analyzer (polarizer), 38 is a CCD element which is a two-dimensional photodetector, 39
Is a device for temporarily storing measurement data and numerically outputting the detected intensity of each element of the detector, 40 is an arithmetic device, and 41 is a sample. This device is different from the device according to the second embodiment of the present invention by 1 /.
This is an improvement in which a four-wavelength plate 36 is added and the one-dimensional detector is replaced with a two-dimensional detector. The sample stage has a rotation function, but is not an essential function for measurement, and is therefore omitted from FIG.

A sample prepared as described below was measured by this apparatus. Glass substrate (Corning 7059)
A sample C was obtained by spin-coating Polyimide LQ-120H manufactured by Hitachi Chemical Co., Ltd., heating at 90 ° C. for 30 minutes, and then heating at 250 ° C. for 60 minutes. Thereafter, using a cloth roller having a diameter of 50 mm, the indentation length is 0.05 mm and the rotation speed is 800 rpm.
rubbing was performed twice at a substrate moving speed of 30 mm / s. This sample C was obtained using an ellipsometer at an incident angle of 50 °.
FIG. 12 shows the measurement results of the dependence of the polarization state of the reflected light from the incident direction on the incident direction and the results calculated from the optimized parameters.
FIG. FIG. 12 shows a sample C measured by an ellipsometer.
FIG. 6 is a diagram showing the incident azimuth dependence of the phase difference component (△) of the reflected light from the light source. FIG. 13 shows a sample C measured by an ellipsometer.
FIG. 4 is a diagram showing the incident azimuth dependence of the amplitude reflectance ratio component (ψ) of the reflected light from the light source. As a result, the dielectric constant of the non-oriented portion is 2.6.
4, thickness 81 nm, dielectric constant of the oriented part 2.72, 2.5
8, the thickness was 13 nm, and the inclination angle of the main dielectric constant coordinate was 41 °.

Using this apparatus, a sample C was measured according to the following procedure. In order to focus the incident light on the sample surface, the height of the sample stage was adjusted so that the sum of the intensities detected by the elements of the detector became maximum. The polarization state of the reflected light is changed at every 1 ° azimuth angle of the quarter-wave plate in FIG. 11, and the intensity of the reflected light is measured from the Fourier sum obtained for the azimuth angle of the quarter-wave plate. (△, ψ). Since this sample has a smaller optical anisotropy than the samples A and B, the mixture of the S-polarized light component and the P-polarized light component in the reflected light is smaller, and the reflected light in the azimuth of the S-polarized light incidence and the P-polarized light incidence. , The measurement accuracy of the phase component significantly deteriorates.

FIG. 14 is a diagram showing the relationship between the azimuth of interest and the polarization direction of light incident on the lens in the device according to the third embodiment of the present invention. A circle 44 is a lens, rectangles 45 and 46 are azimuths of interest, and an arrow 47 is a polarization direction of incident light.

Therefore, the polarization state of the reflected light in the azimuth where the S and P polarization components are 1 = 1 as shown by the dashed rectangles 45 and 46 in FIG. Was measured. As in the second embodiment, １ ／
By rotating the wave plate, the incident azimuth of light to the sample is set to 0 °, 45 °.
゜, 90 ゜, 135 ゜. Since a two-dimensional detector was used in this apparatus, the region of interest was changed along with the rotation of the polarization direction of the incident light, and the polarization state and reflection intensity of the reflected light at each incident azimuth were measured.

In Sample C, the optical anisotropy was extremely small, ψ was minimized at an angle of incidence of about 58 ° in any incident direction, and the reflectance of the P-polarized component was extremely close to 0. The average dielectric constant is estimated to be about 2.56. Ψ = 0 (P polarization component is 0) at any incident direction
The reason why this does not occur is that the sample has a very slight but optical anisotropy. Since no significant anisotropy was observed in the reflection intensity, it was treated as an isotropic film, and the total film thickness was 95 nm.
It became. As a result of optimizing each parameter so as to reproduce the polarization state at each incident direction measured with reference to the above results, the dielectric constant of the non-oriented portion was 2.60 and the thickness was 8
3 nm, permittivity 2.70, 2.55, thickness 13 of orientation part
nm and the inclination angle of the main dielectric constant coordinate were determined to be 40 °.

FIG. 15 is a diagram showing the incident angle dependence of the phase difference component (△) of the reflected light from the sample C at the incident azimuth angle of 0 ° measured by the apparatus according to the third embodiment of the present invention. is there. FIG.
FIG. 6 is a diagram illustrating the incident angle dependence of the amplitude reflectance ratio component (ψ) of the reflected light from the sample C at the incident azimuth angle of 0 ° measured by the device according to the third embodiment of the present invention. Figure 1 shown in the example
The circles in 5 and 16 indicate the measured values at the incident azimuth angle of 0 °, and the curves indicate the polarization states calculated using the optimized parameters.

(Fourth Embodiment of the Present Invention) The polarization state of reflected light is measured by using, as incident light, circularly polarized light by a quarter-wave plate as a fourth embodiment of the present invention. The configuration of the device having the function of performing the above will be described with reference to FIG. 51
Used a 5 mW He-Ne laser as a light source. 52 is a polarizer, 53 is a 1/4 wavelength plate, and 54 is a lens used for condensing incident light and collimating reflected light. A 100 × objective lens of an Olympus microscope having a numerical aperture Na of 0.9 was used. The size (diameter) of the observation area at the focal point is about 1 μm, and a region at an incident angle of 0 ° to 66 ° can be measured. 55 is a half mirror, 56 is a quarter-wave plate, 57 is an analyzer (polarizer), 5
Reference numeral 8 denotes a CCD element which is a two-dimensional photodetector; 59, a device for temporarily storing measurement data and numerically outputting the detected intensity of each element of the detector; 60, an arithmetic device; and 61, a sample. This device is different from the device of the third embodiment in that the half-wave plate 33 is
It is replaced with a four-wavelength plate 53.

Using this sample, sample C was measured. The polarization state is determined in the same manner as in the third embodiment. However, △ and ψ are determined in consideration of the fact that circularly polarized light whose phases in two orthogonal directions are shifted by 90 ° is incident. This device has two detectors
Because of the dimension, the incident angle dependence of the polarization state of the reflected light in all incident directions can be measured simultaneously. However, as described in the third embodiment, in the case of this sample, the anisotropy becomes more apparent in the dependence on the incident azimuth at a constant incident angle than in the plurality of incident azimuths. Since it appears, data on the incident azimuth dependence of the portion corresponding to the incident angle of 50 ° was analyzed. In FIGS. 18 and 19, ○ indicates the measurement result, and curves indicate the analysis result. As a result of the optimization, the permittivity of the oriented portion is 2.73 and 2.58, the inclination angle of the main permittivity coordinate is 40 °, the thickness is 13 nm, the permittivity of the non-oriented portion is 2.63, and the thickness is 81. 0.4 nm.

[0053]

As described above, according to the present invention, light of a certain polarization state is incident on a sample using a lens, and reflected light from the sample is converted into a parallel light beam using the same lens, thereby obtaining about 1 μm. With the spatial resolution of, the orthogonal components (S, P polarization components) of the reflected light or the dependence of the polarization state on the incident angle and the incident azimuth can be measured. From the measured values, the dielectric constant of the anisotropic film and the main dielectric There is an effect that the inclination angle of the rate coordinate, the thickness of the anisotropic portion, the isotropic dielectric constant, and the thickness of the isotropic portion can be evaluated.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of an apparatus including a sample rotation stage according to a first embodiment of the present invention.

FIG. 2 is a diagram showing the incident azimuth dependence of a phase difference component (Δ) of reflected light from a sample A measured by an ellipsometer.

FIG. 3 is a diagram showing the incident azimuth dependence of the amplitude reflectance ratio component (ψ) of reflected light from sample A measured by an ellipsometer.

FIG. 4 is a diagram showing a measurement result of an incident angle dependence of an R _ss component of reflected light from a sample A;

FIG. 5 is a view showing a measurement result of an incident angle dependence of an R _pp component of reflected light from a sample A.

FIG. 6 is a configuration diagram of an apparatus having a function of rotating a polarization plane of incident light using a half-wave plate according to a second embodiment of the present invention.

FIG. 7 is a diagram showing the incident azimuth dependence of a phase difference component (△) of reflected light from sample B measured by an ellipsometer.

FIG. 8 is a diagram showing the incident azimuth dependence of the amplitude reflectance ratio component (ψ) of reflected light from sample B measured by an ellipsometer.

FIG. 9 shows R _ss of reflected light from sample B at an incident azimuth angle of 0 °.
It is a figure showing the measurement result of the incidence angle dependence of a component.

FIG. 10 is a diagram showing a measurement result of an incident angle dependence of an R _sp component of reflected light from a sample B at an incident azimuth angle of 135 °.

FIG. 11 shows a half according to a third embodiment of the present invention.
A function of rotating the plane of polarization of the incident light using a wave plate,
FIG. 2 is a configuration diagram of an apparatus having a function of measuring a polarization state of reflected light.

FIG. 12 is a diagram showing the incident azimuth dependence of the phase difference component (△) of the reflected light from the sample C measured by the ellipsometer.

FIG. 13 is a diagram showing the incident azimuth dependence of the amplitude reflectance ratio component (ψ) of the reflected light from the sample C measured by the ellipsometer.

FIG. 14 is a diagram illustrating a relationship between a direction of interest and a polarization direction of light incident on a lens in an apparatus according to a third embodiment of the present invention.

FIG. 15 is a diagram showing the incident angle dependence of the phase difference component (△) of the reflected light from the sample C at an incident azimuth angle of 0 ° measured by the device according to the third embodiment of the present invention.

FIG. 16 is a diagram showing an incident angle dependency of an amplitude reflectance ratio component (ψ) of reflected light from a sample C at an incident azimuth angle of 0 ° measured by the device according to the third embodiment of the present invention. .

FIG. 17 is a configuration diagram of an apparatus having a function of measuring the polarization state of reflected light by using light that has been circularly polarized by a quarter-wave plate as incident light as a fourth embodiment of the present invention. is there.

FIG. 18 is a diagram showing the incident azimuth dependence of the phase difference component (△) of the reflected light from the sample C corresponding to the incident angle of 50 ° measured by the device according to the fourth embodiment of the present invention. .

FIG. 19 is a diagram showing the incident azimuth dependence of the amplitude reflectance ratio component (ψ) of the reflected light from the sample C corresponding to the incident angle of 50 ° measured by the device according to the fourth embodiment of the present invention. It is.

FIG. 20 is a diagram showing a relationship between a position of light entering a lens and an incident angle.

[Explanation of symbols]

 1, 11, 31, 51 Light source 2, 12, 32, 52 Polarizer 3 Sample rotation stage 4, 14, 34, 54 Lens 5, 15, 35, 55 Half mirror 6, 16, 37, 57 Analyzer (polarizer) ) 7, 17 CCD element 8, 19, 39, 59 Numerical output device 9, 20, 40, 60 Arithmetic device 10, 21, 41, 61 Sample 13, 33 1/2 wavelength plate 36, 53, 56 1/4 wavelength Plate 38, 58 Two-dimensional detector

Claims (12)

[Claims] An S-polarized light component of the reflected light is obtained by condensing incident light of a monochromatic color having a certain polarization state on the surface of the thin film sample and parallelizing reflected light from the thin film sample with the same lens. The dependence of the intensity and the P-polarized component intensity on the incident angle and the incident azimuth can be measured by using a one-dimensional or two-dimensional detector and a polarizer located upstream of the detector to divide the thin film sample around a measurement point. Measuring by rotating inward, determining the permittivity and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main permittivity coordinate with respect to the surface of the thin film sample, and the permittivity and thickness of the isotropic layer. Anisotropic thin film evaluation method. 2. The same lens for condensing incident light of a monochromatic color having a certain polarization state on the surface of a thin film sample and for converting reflected light from the thin film sample into parallel rays, and one-dimensional or two-dimensional detection. Comprising a detector, a polarizer positioned upstream of the detector, and a mechanism for rotating the thin film sample in-plane around a measurement point, and measuring by the detector, the polarizer, and the mechanism for rotating in-plane. From the incident angle and incident azimuth dependence of the intensity of the S-polarized component and the intensity of the P-polarized component of the reflected light, the dielectric constant and thickness of the anisotropic layer of the thin film sample and the main dielectric constant coordinates with respect to the surface of the thin film sample An anisotropic thin film evaluation apparatus, which determines an inclination angle, a dielectric constant and a thickness of an isotropic layer. 3. The same lens is used to converge monochromatic incident light having a certain polarization state on the surface of the thin film sample and to convert reflected light from the thin film sample into parallel rays by using the same lens. The incident angle and the incident direction dependency are measured using a one-dimensional or two-dimensional detector, a quarter-wave plate, and a polarizer by rotating the thin-film sample in-plane around a measurement point. A method for evaluating an anisotropic thin film, comprising determining a dielectric constant and a thickness of an anisotropic layer of a sample, an inclination angle of a main dielectric constant with respect to the thin film sample surface, and a dielectric constant and a thickness of an isotropic layer. 4. The same lens for condensing incident light of a monochromatic color having a certain polarization state on the surface of the thin film sample and converting the reflected light from the thin film sample into parallel rays, and one-dimensional or two-dimensional detection. A detector, a quarter-wave plate, a polarizer, and a mechanism for rotating the thin-film sample in a plane around a measurement point. The detector, the quarter-wave plate, the polarizer, and the in-plane From the dependency of the polarization state of the reflected light on the incident angle and the incident azimuth measured by the rotating mechanism, the dielectric constant and thickness of the anisotropic layer of the thin film sample, and the inclination of the main permittivity coordinate with respect to the surface of the thin film sample An anisotropic thin-film evaluation apparatus characterized by determining an angle, a dielectric constant and a thickness of an isotropic layer. 5. A single lens for condensing monochromatic linearly polarized incident light on the surface of the thin film sample and turning the reflected light from the thin film sample into parallel rays using the same lens. Dependence of the polarization component intensity on the incident angle and the incident azimuth is measured by using a one-dimensional or two-dimensional detector and rotating the polarization direction of the incident light and the direction of the detector in synchronization with each other. A method for evaluating an anisotropic thin film, comprising determining a dielectric constant and a thickness of an anisotropic layer of a sample, an inclination angle of a main dielectric constant with respect to the thin film sample surface, and a dielectric constant and a thickness of an isotropic layer. 6. The same lens for condensing monochromatic, linearly polarized incident light on the thin film sample surface and converting the reflected light from the thin film sample into parallel rays, a one-dimensional or two-dimensional detector, A mechanism for rotating the polarization direction of the incident light and the direction of the detector in synchronization with each other, wherein the intensity of the S-polarized component of the reflected light is measured by the detector and the mechanism for rotating in synchronization. And the incident angle and the incident azimuth dependence of the P-polarized component intensity, the dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant with respect to the thin film sample surface, and the dielectric constant of the isotropic layer. An anisotropic thin film evaluation apparatus characterized by determining a thickness. 7. The same lens collects the monochromatic linearly polarized incident light on the surface of the thin film sample and converts the reflected light from the thin film sample into parallel rays by using the same lens. The incident azimuth dependency is measured by using a one-dimensional or two-dimensional detector, a quarter-wave plate, and a polarizer to rotate the polarization direction of the incident light and the direction of the detector synchronously. Anisotropic thin film characterized in that the dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant with respect to the surface of the thin film sample, and the dielectric constant and thickness of the isotropic layer are determined. Evaluation method. 8. The same lens that condenses monochromatic linearly polarized incident light on the thin film sample surface and converts reflected light from the thin film sample into parallel rays, a one-dimensional or two-dimensional detector, A quarter-wave plate, a polarizer, and a mechanism for rotating the polarization direction of the incident light and the direction of the detector in synchronization with each other, wherein the detector, the quarter-wave plate, the polarizer, Measured by the mechanism that rotates synchronously, from the incident angle and incident direction dependence of the polarization state of the reflected light, the dielectric constant and thickness of the anisotropic layer of the thin film sample, the thin film of the main dielectric constant coordinates An anisotropic thin-film evaluation apparatus characterized by determining an inclination angle with respect to a sample surface and a dielectric constant and a thickness of an isotropic layer. 9. The same lens collects the monochromatic circularly polarized incident light on the surface of the thin film sample and converts the reflected light from the thin film sample into parallel rays by using the same lens. Dependence of the polarization component intensity on the incident angle and the incident azimuth is measured by using a one-dimensional or two-dimensional detector and rotating the polarization direction of the incident light and the direction of the detector in synchronization with each other. A method for evaluating an anisotropic thin film, comprising determining a dielectric constant and a thickness of an anisotropic layer of a sample, an inclination angle of a main dielectric constant with respect to the thin film sample surface, and a dielectric constant and a thickness of an isotropic layer. 10. A single lens for converging monochromatic circularly polarized incident light on a thin film sample surface and converting reflected light from the thin film sample into parallel rays, a one-dimensional or two-dimensional detector, A mechanism for rotating the polarization direction of the incident light and the direction of the detector in synchronization with each other, wherein the intensity of the S-polarized component of the reflected light is measured by the detector and the mechanism for rotating in synchronization. And the incident angle and the incident azimuth dependence of the P-polarized component intensity, the dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant with respect to the thin film sample surface, and the dielectric constant of the isotropic layer. An anisotropic thin film evaluation apparatus characterized by determining a thickness. 11. The same lens collects the monochromatic circularly polarized incident light on the thin film sample surface and converts the reflected light from the thin film sample into a parallel light beam using the same lens. The incident azimuth dependency is measured using a rotating one-dimensional or two-dimensional detector, a quarter-wave plate and a polarizer, and the dielectric constant and thickness of the anisotropic layer of the thin film sample and the main dielectric constant coordinates Determining an inclination angle with respect to the surface of the thin film sample and a dielectric constant and a thickness of the isotropic layer. 12. A single lens for condensing monochromatic circularly polarized incident light on a thin film sample surface and converting reflected light from the thin film sample into parallel rays, and a rotating one-dimensional or two-dimensional detector. And a quarter-wave plate and a polarizer, and the dependency of the polarization state of the reflected light on the incident angle and the incident azimuth measured by the detector, the quarter-wave plate, and the polarizer. Anisotropic thin film characterized in that the dielectric constant and thickness of the anisotropic layer of the thin film sample, the inclination angle of the main dielectric constant with respect to the surface of the thin film sample, and the dielectric constant and thickness of the isotropic layer are determined. Evaluation device.