JPH10289901A - Cvd device and manufacture of semiconductor device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a CVD(chemical vapor deposition) device in which prevention of peeling of a thin film sticking to a susceptor is improved, and a method for manufacturing a semiconductor device using it. SOLUTION: In a CVD device which forms a thin film on a wafer 2 fixed on a susceptor 3, the surface of the susceptor 3 comprises a mirror surface part 3a, on which the wafer 2 at the center part is set, and a coating layer 3c, which is disposed on the periphery of the mirror surface part 3a and comprises a quartz layer, etc. In addition, a method for manufacturing a semiconductor device using the CVD device contains a process in which such a thin film as a BPSG(borophosphosilicate glass) film is formed on the wafer 2 using the CVD device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD apparatus and a method of manufacturing a semiconductor device using the same, and more particularly, to a method of manufacturing a semiconductor integrated circuit device by applying a CVD method to a wafer surface.
(Chemical Vapor Deposition) method by BPSG (Boro
The present invention relates to a technology effective when applied to a CVD apparatus for forming a Phospho Silicate Glass) film.

[0002]

2. Description of the Related Art The present inventor has studied a CVD apparatus used in a semiconductor integrated circuit device manufacturing technique. The following is a technique studied by the present inventors, and the outline is as follows.

That is, in a manufacturing process of a semiconductor integrated circuit device, a BPSG film is formed using a CVD apparatus.

[0004] In this case, for example, an atmospheric pressure CVD apparatus supplies one or several kinds of gases composed of elements constituting a thin film material to a reaction chamber, and forms a thin film on a surface of a wafer composed of, for example, a semiconductor substrate by a chemical reaction. doing. Further, a susceptor is provided in the reaction chamber, and the wafer is fixed to the surface of the susceptor by a vacuum suction method.

The surface of the susceptor has a mirror portion having a diameter larger than the diameter of the wafer and a blast processing portion disposed on the outer periphery thereof (the surface of the susceptor is blasted to form fine irregularities on the surface of the susceptor). And a region which enhances the adhesiveness of the thin film in this region). Therefore, the wafer can be planarly fixed to the surface of the susceptor by the mirror surface portion, so that the variation in the thickness of, for example, the BPSG film deposited on the surface of the wafer is reduced. In addition, the blasting section reduces the peeling of, for example, a BPSG film deposited on the surface of the susceptor.

References describing the CVD apparatus include, for example, “Electronic Materials December, 1988, Separate Volume,” p. 36 issued by the Industrial Research Institute on December 13, 1988.
To p42.

[0007]

However, when, for example, a BPSG film is formed using the normal pressure CVD apparatus described above, the susceptor made of silicon carbide (SiC) is used, so that it is set on the susceptor. When a BPSG film is formed on a wafer having a BPSG film, a BPSG film is also deposited on the blast processing portion of the susceptor, and if the BPSG film deposited on the susceptor becomes a certain thickness, the BPSG film is peeled off. I have.

Therefore, the BPSG film peeled off from the blast processing portion of the susceptor is sprayed on the wafer by the gas, becomes foreign matter for the wafer, and the BPSG film formed on the wafer is regarded as an incomplete film. As a result, the production yield of products such as semiconductor integrated circuit devices is reduced.

In addition, the blast processing section of the susceptor
In order to prevent the SG film from peeling off, remove the susceptor from the reaction chamber, perform cleaning and drying, and perform BPSG in a thin film state.
The necessity of the operation of removing the film causes a problem that the maintenance frequency is increased, the operation rate of the CVD apparatus is reduced, and the throughput of the product start is reduced.

In the case of a sputtering apparatus, when a sputtering film such as an aluminum film is formed on a wafer set on a susceptor by using a sputtering method,
There is an embodiment in which a coating layer is formed on the susceptor so that even if a sputtered film is deposited on the susceptor, the sputtered film can be prevented from peeling to a certain thickness.

However, as a result of the present inventor's study on applying a coating layer formed on a susceptor of a sputtering apparatus to a CVD apparatus, the inventors have found that a
The gas state and thermal state in the reaction chamber with the apparatus are different, and the materials of the susceptor of the sputtering apparatus and the susceptor of the CVD apparatus are different, and their thermal expansion coefficients are different. It has been found that some coating layers cannot be applied to CVD equipment.

An object of the present invention is to provide a CVD apparatus capable of enhancing prevention of peeling of a thin film adhered to a susceptor and a method of manufacturing a semiconductor device using the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0014]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the CVD apparatus of the present invention is a CVD apparatus for forming a thin film on a wafer fixed to a susceptor, and the surface of the susceptor is disposed on a mirror surface portion on which a central wafer is set and an outer periphery of the mirror surface portion. And a coating layer such as a quartz layer.

Further, a method of manufacturing a semiconductor device according to the present invention
A step of forming a thin film such as a BPSG film on a wafer by using the CVD apparatus.

[0017]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

(Embodiment 1) FIG. 1 is a schematic view showing a partially sectioned CVD apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged plan view showing the wafer and the susceptor to which the wafer is fixed in FIG. 1 in an enlarged manner.
FIG. 3 is a cross-sectional view showing a cross section taken along line AA in FIG.

As shown in FIGS. 1 to 3, the CVD apparatus of the present embodiment is a normal pressure CVD apparatus, and has a susceptor 3 for fixing a wafer 2 inside a reaction chamber 1.

The reaction chamber 1 is fixed on a substrate 4 of the apparatus via a flange 5 in a hermetically sealed state. A gas pipe 7 for connecting the exhaust gas from the reaction chamber 1 to an exhaust gas processing mechanism 6 is connected to the base 4.

A dispersion head 8 having a large number of dispersion plates is installed inside the base 4, and a gas pipe 9 connected to the dispersion head 8 has
The ozone generator 11 is connected, and the oxygen supply unit 12 is connected to the ozone generator 11.

Further, a nitrogen supply unit 13 and a TEOS
(Tetraethoxysilane: Si (OC ₂ H ₅ ) ₄ ) Supply unit 13
a, TMP (trimethylphosphate: PO (OCH ₃ ) ₃ ) supply section 13b and TMB (trimethylborate: B (OCH
₃ ) ₃ ) The supply unit 13c is connected.

A vacuum suction mechanism 14 provided above the reaction chamber 1 is connected to the susceptor 3 via a gas pipe 15, and the wafer 2 is fixed to the susceptor 3 using the vacuum suction mechanism 14. And the wafer 2 can be detached from the susceptor 3. The susceptor 3 and the vacuum suction mechanism 14 connected to the susceptor 3 can move in the front-rear direction 16 with respect to the reaction gas so that the reaction gas is evenly supplied to the surface of the wafer 2. On the susceptor 3, a heating mechanism 17 for heating the wafer 2 fixed to the susceptor 3, such as a resistance heater, is provided.

The susceptor 3 of this embodiment has a circular planar shape, and the surface on the side to which the wafer 2 is fixed has a mirror surface portion 3 a having a diameter C smaller than the diameter B of the wafer 2.
And a blast processing section 3b disposed on the outer periphery of the blast processing section 3b. A coating layer 3c made of a quartz layer is formed on the blast processing section 3b. The blast processing unit 3b
The surface of the susceptor 3 is blasted to form fine irregularities on the surface of the susceptor 3 and to enhance the adhesiveness of the thin film in this region. The interface 3d between the blasting part 3b and the mirror part 3a is , In a region covered by the wafer 2. Specifically, when the diameter B of the wafer 2 is, for example, 125 mm, the diameter C of the mirror surface portion 3a is, for example, 115 mm, and the mirror surface portion 3a has a diameter C smaller than the diameter B of the wafer 2.

The blasting section 3b of the susceptor 3 of the present embodiment blasts the surface of the susceptor 3 made of silicon carbide material,
This is a region in which fine irregularities are formed on the surface of the thin film to enhance the adhesiveness of the thin film in this region. Further, the coating layer 3c made of a quartz layer formed on the blasting section 3b is formed on the wafer 2 set on the susceptor 3 using a BPSG film (CVD) using the CVD apparatus of the present embodiment. When the BPSG film is formed, a BPSG film is also deposited on the coating layer 3c of the susceptor 3, and the deposited BPSG film is
The coating layer 3c is provided so that even if the SG film has a certain thickness, no peeling occurs.

Accordingly, the coating layer 3c of the susceptor 3 is assumed to have the following three conditions as a result of the study by the present inventors.

That is, (1). Coating layer 3c
Has good adhesion to the susceptor 3,
Under which the coating layer 3c is not peeled off.

(2). The coating layer 3c has a coefficient of thermal expansion close to that of a CVD film such as a BPSG film deposited on the surface thereof. Depending on the temperature of the CVD apparatus, the coating layer 3c and a CVD film such as a BPSG film deposited thereon are deposited. The condition under which peeling does not occur due to the difference in the coefficient of thermal expansion.

(3). The susceptor 3
When the coating layer 3c is formed on the susceptor 3, the shape of the susceptor 3 having the blast processing part 3b may be changed depending on the manufacturing process when forming the coating layer 3c on the susceptor 3. Conditions that do not deform.

Specifically, the coating layer 3c of the present embodiment is a quartz layer formed by using a thermal spray plasma method, and the quartz layer is a coating layer satisfying the above-mentioned conditions. This is the coating layer 3c.

The quartz layer as the coating layer 3c of the present embodiment is provided on the blasting section 3b of the susceptor 3
It is formed using a thermal spray plasma method. In the thermal spray plasma method, a gas that has passed through the plasma is sprayed onto the blast processing section 3b of the susceptor 3 using a gun-like instrument. In this method, quartz is deposited at a low temperature to form a quartz layer. As a result, a coating layer 3c made of a quartz layer having irregularities corresponding to the irregularities of the blast processing portion 3b of the susceptor 3 can be obtained, and the surface of the quartz layer having irregularities has finer irregularities than the irregularities. Coating layer 3 consisting of quartz layer
c. The coefficient of thermal expansion of the quartz layer is 0.
By being 4 × 10 ⁻⁶ / ° C., the thermal expansion coefficient of the BPSG film is close to that of the BPSG film.

The operation of the CVD apparatus according to the present embodiment is as follows.

That is, after the wafer 2 for manufacturing, for example, a semiconductor integrated circuit device is fixed to the susceptor 3 installed in the reaction chamber 1 by using the vacuum suction mechanism 14, the reaction chamber 1 is moved to the base 4 Is fixed in a hermetically sealed state via a flange 5. Next, after replacing the air and the like existing in the reaction chamber 1 with nitrogen gas introduced from the nitrogen supply unit 13, the heating mechanism 17 heats the wafer 2 to a predetermined temperature. Supply the reaction gas inside. In this case, the reaction gas is ozone from the ozone generator 11 connected to the oxygen supply unit 12, TEO
These are TEOS from the S supply unit 13a, TMP from the TMP supply unit 13b, and TMB from the TMB supply unit 13c.

In this state, the wafer 2 is moved in the front-rear direction 1
6, a BPSG film having a predetermined thickness is deposited on the surface of the wafer 2. In this case, the exhaust gas after the chemical reaction is absorbed by the exhaust gas processing mechanism 6 through the gas pipe 7.

According to the CVD apparatus of this embodiment, the surface of the susceptor 3 is composed of the central mirror portion 3a on which the wafer 2 is set and the blast processing portion 3b arranged on the outer periphery of the mirror portion 3a. When the BPSG film is formed on the wafer 2 by forming the coating layer 3c made of a quartz layer on the blast processing unit 3b,
Although the BPSG film is deposited also on the coating layer 3c formed of a quartz layer, even if the BPSG film has a thickness of 100 μm or more, it is possible to prevent the peeling between the coating layer 3c and the BPSG film.

Therefore, according to the CVD apparatus of the present embodiment, for example, when a BPSG film is formed, even if the susceptor 3 made of silicon carbide is used, the BPSG film is formed on the wafer 2 set on the susceptor 3. Is formed on the blasting part 3b of the susceptor 3, the peeling between the coating layer 3c and the BPSG film can be prevented. As a result, the BPSG film peeled off from the blast processing section 3b of the susceptor 3 is sprayed onto the wafer 2 by the gas, as in the related art.
Since it is possible to prevent the BPSG film formed on the wafer 2 from becoming an incomplete film because it becomes a foreign substance to the wafer 2, the BPSG film has high performance and high reliability.
A product such as a semiconductor integrated circuit device having a film can be manufactured, and the manufacturing yield of the product such as the semiconductor integrated circuit device can be improved.

Further, according to the CVD apparatus of the present embodiment, since the coating layer 3c made of a quartz layer is provided on the blasting section 3b of the susceptor 3,
Even if the thickness of the PSG film becomes 100 μm or more, the susceptor 3 is removed from the reaction chamber 1 by preventing the coating layer 3c from peeling off from the BPSG film.
The frequency of maintenance such as the work of removing the BPSG film by performing washing and drying can be reduced, the operation rate of the CVD apparatus can be improved, and the throughput of product start can be improved.

According to the CVD apparatus of the present embodiment, the blast processing unit 3 disposed on the outer periphery of the mirror portion 3a at the center where the wafer 2 on the surface of the susceptor 3 is set.
By forming a coating layer 3c made of a silicon oxide layer or the like other than the quartz layer satisfying the above conditions in a region such as b, the PSG film other than the BPSG film or the BSG film is formed on the wafer 2. CVD of film etc.
When forming a film, CVD is also applied on the coating layer 3c.
Although the film is deposited, even if the CVD film becomes thick, it is possible to prevent the peeling of the coating layer 3c from the CVD film.

Further, in the CVD apparatus of the present embodiment, the surface of the susceptor 3 is composed of a central mirror portion 3a and a blast processing portion 3b arranged on the outer periphery of the mirror surface portion 3a. The coating layer 3c is formed thereon, and the region where the coating layer 3c is formed is in the form of a flat portion or a fine unevenness forming portion having fine unevenness formed by a selective etching method or the like. be able to.

Further, according to the CVD apparatus of the present embodiment, since a thin film can be formed by the CVD method, BPSG
PS, which is a silicon oxide film containing phosphorus in addition to the film
G film, BSG which is a silicon oxide film containing boron
An insulating film such as a film, a silicon oxide film, a silicon nitride film, or a conductive film such as a polycrystalline silicon film or tungsten can be formed.

Further, according to the CVD apparatus of the present embodiment, the surface of the susceptor 3 is composed of the central mirror part 3a and the blast processing part 3b arranged on the outer periphery of the mirror part 3a. Although the coating layer 3c is formed on the processing section 3b, other structures can adopt various modes, so that the inside of the reaction chamber 1 is reduced in pressure other than the atmospheric pressure CVD apparatus. Reduced pressure CVD
Various CVs such as a plasma CVD apparatus for forming a thin film by plasma discharge decomposition of a reaction gas under reduced pressure
It can be applied to the D device.

(Embodiment 2) FIGS. 4 to 9 are schematic sectional views showing the steps of manufacturing a semiconductor integrated circuit device using a CVD apparatus according to another embodiment of the present invention. The method for manufacturing the semiconductor integrated circuit device according to the present embodiment will be described with reference to FIG.

First, a field insulating film 19 made of a silicon oxide film is formed in a device isolation region, which is a selective region on the surface of a semiconductor substrate (wafer) 18 made of, for example, p-type silicon single crystal, by using a thermal oxidation process. I do. Although not shown, a channel stopper film for preventing inversion is formed below the field insulating film 19 (FIG. 4).

Next, a gate insulating film 20 made of silicon oxide is formed in an element forming region surrounded by the field insulating film 19, and a gate electrode 21 made of polycrystalline silicon is formed on the gate insulating film 20. Gate electrode 2
1 is formed by sequentially depositing an insulating film 22 composed of a polycrystalline silicon film and a silicon oxide film on a semiconductor substrate 15 and etching these sequentially. Then, the gate electrode 2
A sidewall insulating film 23 made of a silicon oxide film is formed on one side wall. Next, an n-type impurity such as phosphorus is ion-implanted into the semiconductor substrate 18 to form an n-type semiconductor region 24 serving as a source and a drain (FIG. 5).

Thereafter, an insulating film 25 made of a silicon oxide film is formed on the semiconductor substrate 18 by using the CVD apparatus of the first embodiment, and a contact hole is formed in a selective region thereof. Contact electrode 26 in the region
Is formed (FIG. 6).

Next, after the insulating film 27 made of a BPSG film is formed on the semiconductor substrate 18 by using the CVD apparatus of the first embodiment described above, a through hole is formed in a selective region thereof (FIG. 7).

In the above-described manufacturing process of the semiconductor integrated circuit device, an n-channel MOSFET is formed on the semiconductor substrate 18.
An embodiment in which various semiconductor elements such as a p-channel MOSFET, a bipolar transistor, and a capacitor other than ET are formed can be adopted.

Next, after a barrier metal film 28 made of titanium is formed on the semiconductor substrate 18 by using a sputtering method, a metal film 29 made of aluminum is formed on the surface of the barrier metal film 28 by using a sputtering method. Form. Thereafter, a barrier metal film 30 made of titanium is formed on the metal film 29 by using a sputtering method. In this case, the barrier metal film 28 and the barrier metal film 30
May be in the form of a refractory metal film using an alloy such as titanium, tungsten, molybdenum or TiW. Further, the metal film 29 can be in the form of a metal film using copper or gold (FIG. 8).

Thereafter, unnecessary portions of the barrier metal film 28 / metal film 29 / barrier metal film 30 as wiring layers are removed by using a photolithography technique and a selective etching technique to form a wiring pattern (FIG. 9). Next, after a multilayer wiring layer is formed as necessary, a passivation film (not shown) is formed, thereby completing the manufacturing process of the semiconductor integrated circuit device.

According to the method of manufacturing a semiconductor integrated circuit device of the present embodiment, a silicon oxide film as the insulating film 25 and a BPSG film as the insulating film 27 are formed by using the CVD apparatus of the first embodiment. By forming
In the manufacturing process, peeling of the film from the susceptor 3 and generation of foreign matter due to the peeling of the film can be suppressed, so that the insulating film 27 made of a high-performance BPSG film can be formed, and the manufacturing yield of the semiconductor integrated circuit device can be increased. .

The method of manufacturing a semiconductor integrated circuit device according to the present embodiment described above is directed to the method of manufacturing the semiconductor integrated circuit device according to the present invention.
5 and the insulating film 27 are formed using the above-described CVD apparatus of the first embodiment, but the conductive film such as a polycrystalline silicon film in a single semiconductor device such as a field-effect transistor or a bipolar transistor. The above-described CVD apparatus of the first embodiment can be used for a technique for manufacturing an insulating film such as a BPSG film.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the gist of the invention. Needless to say, it can be changed.

For example, the method of manufacturing a semiconductor device according to the present invention can be a method of manufacturing a semiconductor integrated circuit device in which various semiconductor elements such as MOSFETs, CMOSFETs, and bipolar transistors are combined.

Further, the present invention relates to a MOSFET, a CMO
Logic or SRAM (Static Random Access Mem) with SFET, BiCMOSFET, etc.
ory), a method for manufacturing various semiconductor integrated circuit devices having a memory system such as a DRAM (Dynamic Random Access Memory).

[0055]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the CVD apparatus of the present invention, the surface of the susceptor is composed of a mirror portion at the center where a wafer is set and a blast processing portion arranged on the outer periphery of the mirror surface portion. When a thin film such as a BPSG film is formed on a wafer, a thin film such as a BPSG film is deposited on the coating layer such as a quartz layer. Can be prevented from being peeled off from the coating layer even if the film becomes thick.

Therefore, according to the CVD apparatus of the present invention, for example, when a BPSG film is formed, even if a susceptor made of silicon carbide is used, the BPSG film is formed on a wafer set on the susceptor. ,
By providing a coating layer made of a quartz layer on the blasting portion of the susceptor, it is possible to prevent the coating layer from being peeled off from the BPSG film.
As a result, the BPSG film peeled off from the blast processing part of the susceptor is sprayed on the wafer by the gas as in the conventional case, and becomes a foreign matter for the wafer, and the BPSG film formed on the wafer is incompletely formed. It is possible to manufacture a product such as a semiconductor integrated circuit device having a high-performance and high-reliability BPSG film, thereby improving the production yield of the product such as the semiconductor integrated circuit device. can do.

(2). According to the CVD apparatus of the present invention, since the coating layer made of a quartz layer is provided on the blast processing part of the susceptor, even if the thickness of the BPSG film is 100 μm or more, the coating layer and the BPSG
By preventing peeling from the film,
Remove the susceptor from the reaction chamber, wash and dry,
The frequency of maintenance such as the work of removing the SG film can be reduced, the operation rate of the CVD apparatus can be improved, and the throughput of starting the product can be improved.

(3). According to the method for manufacturing a semiconductor device of the present invention, an insulating film such as a BPSG film or a conductive film such as a polycrystalline silicon film is formed by using the above-described CVD apparatus. Of the film and the generation of foreign substances due to the film peeling can be suppressed, so that a high-performance insulating film such as a BPSG film or a conductive film such as a high-performance polycrystalline silicon film can be formed, and the production yield of the semiconductor integrated circuit device is increased. be able to.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing a part of a CVD apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged plan view showing a wafer and a susceptor to which the wafer is fixed in FIG. 1 in an enlarged manner.

FIG. 3 is a cross-sectional view showing a cross section taken along line AA in FIG. 2;

FIG. 4 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view showing a manufacturing process of a semiconductor integrated circuit device using a CVD device according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Wafer 3 Susceptor 3a Mirror part 3b Blast processing part 3c Coating layer 3d Interface between mirror part and blast processing part 4 Substrate 5 Flange 6 Exhaust gas processing mechanism 7 Gas pipe 8 Dispersion head 9 Gas pipe 10 Gas pipe 11 Ozone generator 12 Oxygen supply unit 13 Nitrogen supply unit 13a TEOS supply unit 13b TMP supply unit 13c TMB supply unit 14 Vacuum suction mechanism 15 Gas pipe 16 Front-back direction 17 Heating mechanism 18 Semiconductor substrate 19 Field insulating film 20 Gate insulating film 21 Gate electrode Reference Signs List 22 insulating film 23 sidewall insulating film 24 semiconductor region 25 insulating film 26 contact electrode 27 insulating film 28 barrier metal film 29 metal film 30 barrier metal film B diameter C diameter

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Mitsuaki Horiuchi 2326 Imai, Ome-shi, Tokyo Inside Device Development Center, Hitachi, Ltd.

Claims (8)

[Claims] 1. A CVD apparatus for forming a thin film on a wafer fixed to a susceptor, wherein a surface of the susceptor has a mirror surface portion for setting the wafer in a central portion and a coating disposed on an outer periphery of the mirror surface portion. A CVD apparatus comprising a layer. 2. The CVD apparatus according to claim 1, wherein the coating layer has good adhesion to the susceptor, and has a coefficient of thermal expansion close to that of the thin film deposited on the surface of the coating layer. In addition, in the manufacturing process when forming the coating layer on the susceptor, it can be coated at a low temperature, when forming the coating layer on the susceptor,
A CVD apparatus having a condition that the shape of the susceptor is not deformed by the manufacturing process. 3. The CVD apparatus according to claim 1, wherein said susceptor is made of silicon carbide. 4. The C according to claim 1, wherein
A CVD apparatus, wherein the coating layer is a quartz layer formed by using a thermal spray plasma method. 5. The C according to claim 1, wherein
VD apparatus, wherein the CVD apparatus is a normal pressure CVD apparatus for forming a BPSG film.
VD device. 6. C according to any one of claims 1 to 5,
A method for manufacturing a semiconductor device, comprising a step of forming a thin film on a wafer using a VD apparatus. 7. The method for manufacturing a semiconductor device according to claim 6, wherein the thin film is an insulating film or a conductive film. 8. The method of manufacturing a semiconductor device according to claim 6, wherein said thin film is a BPSG film.