JPH1027873A - Lead frame for semiconductor device - Google Patents
Lead frame for semiconductor deviceInfo
- Publication number
- JPH1027873A JPH1027873A JP20132496A JP20132496A JPH1027873A JP H1027873 A JPH1027873 A JP H1027873A JP 20132496 A JP20132496 A JP 20132496A JP 20132496 A JP20132496 A JP 20132496A JP H1027873 A JPH1027873 A JP H1027873A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- plating
- alloy
- semiconductor device
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、集積回路の枠構造
を形成するリードフレームに係り、特にモールド樹脂密
着性およびＡｇペースト樹脂密着性に優れた構造を有す
る半導体装置用リードフレームに関する。The present invention relates to a lead frame for forming a frame structure of an integrated circuit, and more particularly to a lead frame for a semiconductor device having a structure excellent in mold resin adhesion and Ag paste resin adhesion.
【０００２】[0002]
【従来の技術】従来、半導体装置用リードフレームの素
材上のＮｉめっきには、ボンディング性や延展性の必要
なことから、無光沢Ｎｉめっき液が用いられてきた。し
かし、無光沢Ｎｉめっき液として一般に使用されるワッ
ト浴Ｎｉめっきは、結晶粒子が小さく、かつ結晶配向性
が不規則であり、平滑面も含まれるため、リードフレー
ムの特性として必要な樹脂モールド密着強度やＡｇペー
スト密着強度が充分ではなかった。2. Description of the Related Art Conventionally, a matte Ni plating solution has been used for Ni plating on a material of a lead frame for a semiconductor device, since bonding property and spreadability are required. However, Watt bath Ni plating, which is generally used as a matte Ni plating solution, has small crystal grains, irregular crystal orientation, and includes a smooth surface. The strength and the adhesion strength of the Ag paste were not sufficient.
【０００３】[0003]
【発明が解決しようとする課題】本発明の目的は、モー
ルド樹脂密着性とＡｇペースト樹脂密着性に優れてお
り、信頼性の高い半導体装置用リードフレームを提供す
ることにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a highly reliable lead frame for a semiconductor device which has excellent mold resin adhesion and Ag paste resin adhesion.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、モールド
樹脂密着性とＡｇペースト樹脂密着性に優れたリードフ
レームの研究開発を進めるうちに、リードフレーム素材
上の中間層であるＮｉめっき層の結晶が（１．１．１）
面および（３．１．１）面に強い配向性を持っているこ
と、およびＮｉめっき層の結晶粒の大きさがこの配向性
に影響を与えていることを知見した。本発明は、これら
の知見に基づいてなされ、完成に至ったものである。Means for Solving the Problems The inventors of the present invention proceeded with research and development of a lead frame having excellent mold resin adhesion and Ag paste resin adhesion, and found that an Ni plating layer as an intermediate layer on a lead frame material was developed. Is a crystal of (1.1.1)
It has been found that the surface and the (3.1.1) plane have strong orientation, and that the size of the crystal grains of the Ni plating layer affects the orientation. The present invention has been made based on these findings and has been completed.
【０００５】本発明の半導体装置用リードフレームは、
リードフレーム素材上の中間層としてのＮｉめっき層の
結晶が、（１．１．１）面および（３．１．１）面に強
い配向性を有することを特徴としている。A lead frame for a semiconductor device according to the present invention comprises:
It is characterized in that the crystal of the Ni plating layer as an intermediate layer on the lead frame material has strong orientation in the (1.1.1) plane and the (3.1.1) plane.
【０００６】以下に、本発明について詳細に説明する。
本発明において、リードフレーム素材としては、純Ｃ
ｕ、Ｃｕ合金、Ｆｅ、Ｆｅ合金等が用いられる。Hereinafter, the present invention will be described in detail.
In the present invention, the lead frame material is pure C
u, Cu alloy, Fe, Fe alloy and the like are used.
【０００７】リードフレーム素材上の中間層としてのＮ
ｉめっき層は、電解法、無電解法、蒸着法のいずれの方
法を採用してもよい。また、Ｎｉめっき層の厚みは、
０．０５μｍ〜５０μｍが適正な範囲である。N as an intermediate layer on a lead frame material
The i-plated layer may employ any of an electrolytic method, an electroless method, and a vapor deposition method. The thickness of the Ni plating layer is
An appropriate range is 0.05 μm to 50 μm.
【０００８】Ｎｉめっき層の上層の貴金属層にはＰｄ，
Ｐｄ合金、Ａｕ，Ａｕ合金、Ａｇ，Ａｇ合金のめっきが
使用される。これらのめっき層は、電解法、無電解法、
密着法のいずれによっても製作が可能である。The noble metal layer above the Ni plating layer has Pd,
Pd alloy, Au, Au alloy, Ag, Ag alloy plating is used. These plating layers are formed by the electrolytic method, the electroless method,
It can be manufactured by any of the contact methods.
【０００９】[0009]
【実施例】以下に、本発明を実施例と比較例によりさら
に説明する。実施例 １ 銅合金基材のリードフレームの表面に、常法により脱脂
および活性化を行った後、全面に中間層として厚さ１μ
ｍのＮｉめっきを施した。Ｎｉめっきの条件は、硫酸ニ
ッケル ２２０ｇ／ｌ（Ｎｉとして４６ｇ／ｌ）、塩化
ニッケル １５０ｇ／ｌ（Ｎｉとして３７ｇ／ｌ）、ホ
ウ酸２０ｇ／ｌからなるめっき液にて、液温５０℃、陰
極電流密度２Ａ／ｄｍ2 でめっきを行った。The present invention will be further described below with reference to examples and comparative examples. Example 1 After degreasing and activating the surface of a lead frame made of a copper alloy substrate by a conventional method, the entire surface was 1 μm thick as an intermediate layer.
m of Ni plating was applied. Ni plating conditions were as follows: a plating solution composed of 220 g / l of nickel sulfate (46 g / l as Ni), 150 g / l of nickel chloride (37 g / l as Ni), and 20 g / l of boric acid, at a liquid temperature of 50 ° C. and a cathode. Plating was performed at a current density of 2 A / dm 2 .
【００１０】得られたリードフレームについて、モール
ド樹脂密着性評価試験とＡｇペースト樹脂密着性評価試
験を行った。各評価試験の要領は、次の通りである。 モールド樹脂密着性評価試験：低応力型モールド樹脂
と、ビフュニール型モールド樹脂を使用した場合の熱処
理（１７５℃×６０分加熱保持後、２５０℃×３分加
熱）したものと、熱処理しないものについてのシェア強
度（Ｎ：ニュートン）を測定した。The obtained lead frame was subjected to a mold resin adhesion evaluation test and an Ag paste resin adhesion evaluation test. The outline of each evaluation test is as follows. Mold Resin Adhesion Evaluation Test: Low-stress mold resin, heat treatment using bifunny mold resin (heating at 175 ° C. × 60 minutes, heating at 250 ° C. for 3 minutes), and heat treatment without heat treatment The shear strength (N: Newton) was measured.
【００１１】Ａｇペースト樹脂密着性評価試験：ペース
トキュア条件が１６０℃×６０分後、ダイシェア強度２
５０℃で測定した。チップのサイズは２ｍｍ×２ｍｍで
ある。Ag paste resin adhesion evaluation test: After a paste curing condition of 160 ° C. × 60 minutes, a die shear strength of 2 was obtained.
It was measured at 50 ° C. The size of the chip is 2 mm × 2 mm.
【００１２】各評価試験の結果を、表１に示す。評価に
おいて、Ａは優れたもの、Ｂはやや良いもの、Ｃはやや
悪いもの、Ｄは悪いものを表す。Table 1 shows the results of each evaluation test. In the evaluation, A represents excellent, B represents slightly good, C represents slightly bad, and D represents bad.
【００１３】[0013]
【表１】 [Table 1]
【００１４】比較例 １ 銅合金基材のリードフレームの表面に脱脂および活性化
を行った後、全面に中間層として厚さ１μｍのＮｉめっ
きを施した。Ｎｉめっきの条件は、実施例１と異り、Ｎ
ｉ量が多い。すなわち、硫酸ニッケル２８０ｇ／ｌ（Ｎ
ｉとして５８ｇ／ｌ）、塩化ニッケル４０ｇ／ｌ（Ｎｉ
として１０ｇ／ｌ）、ホウ酸２０ｇ／ｌからなるワット
浴めっき液にて液温５０℃、陰極電流密度２Ａ／ｄｍ2
でめっきを行った。 Comparative Example 1 After degreasing and activating the surface of a lead frame made of a copper alloy substrate, a 1 μm-thick Ni plating was applied as an intermediate layer on the entire surface. The conditions of the Ni plating are different from those of the first embodiment.
i amount is large. That is, 280 g / l of nickel sulfate (N
i as 58 g / l), nickel chloride 40 g / l (Ni
10 g / l) and a watt bath plating solution consisting of boric acid 20 g / l at a liquid temperature of 50 ° C. and a cathode current density of 2 A / dm 2.
Was plated.
【００１５】得られたリードフレームについて、実施例
１と同一の要領で、モールド樹脂密着性評価試験とＡｇ
ペースト樹脂密着性評価試験を行った。各評価試験の結
果を、表１に併記する。With respect to the obtained lead frame, in the same manner as in Example 1, a mold resin adhesion evaluation test and Ag
A paste resin adhesion evaluation test was performed. Table 1 also shows the results of each evaluation test.
【００１６】実施例 ２ 実施例１および比較例１と同様のＮｉめっき条件で、Ｎ
ｉめっき厚１０μｍのリードフレームの試料を作成し、
Ｘ線回折装置によりＮｉめっき結晶の配向性を調べた。
その結果を、表２に示す。 Example 2 Under the same Ni plating conditions as in Example 1 and Comparative Example 1, N
Prepare a lead frame sample with i plating thickness of 10 μm,
The orientation of the Ni-plated crystal was examined using an X-ray diffractometer.
Table 2 shows the results.
【００１７】[0017]
【表２】 [Table 2]
【００１８】また、走査電子顕微鏡により結晶状を観察
した。その結果を、走査電子顕微鏡写真として、図１お
よび図２に示す。Further, the crystal state was observed by a scanning electron microscope. The results are shown in FIGS. 1 and 2 as scanning electron micrographs.
【００１９】[0019]
【発明の効果】本発明の半導体装置用リードフレーム
は、従来品よりＮｉめっき層の結晶が大きく、かつ
（１．１．１）面と（３．１．１）面に強い配向性を有
するために、モールド樹脂密着性とＡｇペースト樹脂密
着性が優れており、リードフレームとしての信頼性が大
きい。According to the lead frame for a semiconductor device of the present invention, the crystal of the Ni plating layer is larger than that of the conventional product, and the (1.1.1) and (3.1.1) planes have strong orientation. Therefore, the mold resin adhesion and the Ag paste resin adhesion are excellent, and the reliability as a lead frame is large.
【図１】実施例１のＮｉめっき条件でＮｉめっき厚１０
μｍを施したリードフレームの走査電子顕微鏡写真（×
１０4 倍）である。FIG. 1 shows a Ni plating thickness of 10 under the Ni plating conditions of Example 1.
Scanning electron micrograph (μm) of a lead frame
10 4 times).
【図２】比較例１のＮｉめっき条件でＮｉめっき厚１０
μｍを施したリードフレームの走査電子顕微鏡写真（×
１０4 倍）である。FIG. 2 shows a Ni plating thickness of 10 under the Ni plating conditions of Comparative Example 1.
Scanning electron micrograph (μm) of a lead frame
10 4 times).
Claims (2)
ｉめっき層の結晶が、（１．１．１）面および（３．
１．１）面に強い配向性を有することを特徴とする、半
導体装置用リードフレーム。(1) N as an intermediate layer on a lead frame material
The crystal of the i-plated layer has (1.1.1) plane and (3.
1.1) A lead frame for a semiconductor device, which has a strong orientation on its surface.
μｍであり、Ｎｉめっき層の上層として、Ｐｄ，Ｐｄ合
金、Ａｕ，Ａｕ合金、Ａｇ，およびＡｇ合金のいずれか
１種以上のめっき層を有している請求項１に記載の半導
体装置用リードフレーム。2. The Ni plating layer has a thickness of 0.05 μm to 50 μm.
2. The lead according to claim 1, wherein the lead has a thickness of at least one of Pd, Pd alloy, Au, Au alloy, Ag, and Ag alloy as an upper layer of the Ni plating layer. 3. flame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20132496A JPH1027873A (en) | 1996-07-11 | 1996-07-11 | Lead frame for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20132496A JPH1027873A (en) | 1996-07-11 | 1996-07-11 | Lead frame for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1027873A true JPH1027873A (en) | 1998-01-27 |
Family
ID=16439132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20132496A Pending JPH1027873A (en) | 1996-07-11 | 1996-07-11 | Lead frame for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1027873A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002017396A1 (en) * | 2000-08-23 | 2002-02-28 | Acqutek Semiconductor & Technology Co., Ltd. | Substrate for manufacturing a semiconductor device with three element alloy |
| KR100833934B1 (en) * | 2002-01-24 | 2008-05-30 | 삼성테크윈 주식회사 | Multi-layer plating lead frame and method of manufacturing the same |
| JP2009235579A (en) * | 2009-07-13 | 2009-10-15 | Mitsui High Tec Inc | Lead frame |
| JP2014141725A (en) * | 2013-01-25 | 2014-08-07 | Mitsubishi Materials Corp | Ni PLATING PROVIDED COPPER OR COPPER ALLOY SHEET |
| KR20180079291A (en) | 2015-11-05 | 2018-07-10 | 후루카와 덴키 고교 가부시키가이샤 | Lead frame material and manufacturing method thereof |
| KR20200135288A (en) | 2018-03-23 | 2020-12-02 | 후루카와 덴키 고교 가부시키가이샤 | Lead frame material and manufacturing method thereof, and semiconductor package using the same |
| KR20210056400A (en) | 2018-10-18 | 2021-05-18 | 제이엑스금속주식회사 | Conductive materials, molded products and electronic components |
| KR20210056399A (en) | 2018-10-18 | 2021-05-18 | 제이엑스금속주식회사 | Conductive materials, molded products and electronic components |
| KR20240033205A (en) | 2021-07-16 | 2024-03-12 | 후루카와 덴키 고교 가부시키가이샤 | Lead frame material and its manufacturing method and semiconductor package |
-
1996
- 1996-07-11 JP JP20132496A patent/JPH1027873A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002017396A1 (en) * | 2000-08-23 | 2002-02-28 | Acqutek Semiconductor & Technology Co., Ltd. | Substrate for manufacturing a semiconductor device with three element alloy |
| KR100379128B1 (en) * | 2000-08-23 | 2003-04-08 | 주식회사 아큐텍반도체기술 | Substrate for mannfacturing the environmentally favorable semiconductor device using three element alloy |
| KR100833934B1 (en) * | 2002-01-24 | 2008-05-30 | 삼성테크윈 주식회사 | Multi-layer plating lead frame and method of manufacturing the same |
| JP2009235579A (en) * | 2009-07-13 | 2009-10-15 | Mitsui High Tec Inc | Lead frame |
| JP2014141725A (en) * | 2013-01-25 | 2014-08-07 | Mitsubishi Materials Corp | Ni PLATING PROVIDED COPPER OR COPPER ALLOY SHEET |
| KR20180079291A (en) | 2015-11-05 | 2018-07-10 | 후루카와 덴키 고교 가부시키가이샤 | Lead frame material and manufacturing method thereof |
| KR20200135288A (en) | 2018-03-23 | 2020-12-02 | 후루카와 덴키 고교 가부시키가이샤 | Lead frame material and manufacturing method thereof, and semiconductor package using the same |
| KR20210056400A (en) | 2018-10-18 | 2021-05-18 | 제이엑스금속주식회사 | Conductive materials, molded products and electronic components |
| KR20210056399A (en) | 2018-10-18 | 2021-05-18 | 제이엑스금속주식회사 | Conductive materials, molded products and electronic components |
| KR20240033205A (en) | 2021-07-16 | 2024-03-12 | 후루카와 덴키 고교 가부시키가이샤 | Lead frame material and its manufacturing method and semiconductor package |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Effective date: 20040518 Free format text: JAPANESE INTERMEDIATE CODE: A02 |