JPH1027748A - Method of applying coating liquid onto wafer - Google Patents

Method of applying coating liquid onto wafer

Info

Publication number
JPH1027748A
JPH1027748A JP8196936A JP19693696A JPH1027748A JP H1027748 A JPH1027748 A JP H1027748A JP 8196936 A JP8196936 A JP 8196936A JP 19693696 A JP19693696 A JP 19693696A JP H1027748 A JPH1027748 A JP H1027748A
Authority
JP
Japan
Prior art keywords
substrate
coating
wafer
film
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8196936A
Other languages
Japanese (ja)
Inventor
Eiji Nakajima
英治 中島
Yasuhide Nakajima
泰秀 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP8196936A priority Critical patent/JPH1027748A/en
Publication of JPH1027748A publication Critical patent/JPH1027748A/en
Withdrawn legal-status Critical Current

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  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)

Abstract

PROBLEM TO BE SOLVED: To enable a coating film to vary less in thickness throughout the surface of a wafer by a method wherein the surface of the wafer is subjected to a process so as to be coated with a film which is not wetted by the solvent of a coating solution, and then a coating film is formed on the surface of the wafer by spin coating. SOLUTION: A wafer 110 is subjected to a cleaning treatment, and then a treatment which enables a region not to be wetted by the solvent of a coating solution is performed onto a required region of the wafer 110 where a coating solution is applied. This treatment is carried out in such a manner that a member impregnated with processing solution is pressed against the wafer 110 so as to form a coating film 120 which is not wetted by the solvent of a coating solution on the periphery of prescribed width of the wafer and marks on the wafer 110. The coating film 120 is made of, for instance, organosiloxane. An organosiloxane film is formed on a wafer in such a method that organosiloxane dissolved into isopropyl alcohol is applied and then dried out by evaporating isopropyl alcohol by heating. Then, the wafer 110 is set on a rotator 130 of a rotating device, and a coating solution is made to drip down on the wafer 110 which is rotated, whereby a coating solution is applied onto the wafer 110 by spin-coating.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術の分野】本発明は,基板への塗布液
のスピンコーティング技術に関するもので、特に、半導
体装置、フオトマスク、LCD−CF等を作製のための
感光材料のスピンコーティング技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for spin coating a coating solution on a substrate, and more particularly to a technique for spin coating a photosensitive material for manufacturing a semiconductor device, a photomask, an LCD-CF, and the like.

【0002】[0002]

【従来の技術】近年、液晶カラー表示装置(LCD:L
iquid Crystal Display Dev
iceとも言う)の利用は盛んとなり、これに用いられ
る液晶カラー表示用カラーフィルター(LCD−CF:
Liquid CrystalDisplay Dev
ice−Colour Filterと言う)もますま
すその品質の向上や量産が求められている。LCDは、
R、G、Bの各色のフィルターを通過する光を、液晶に
電界をかけることにより制御して表示するものである
が、このLCDに用いられるLCD−CFは、通常、透
明なガラス基板上にR、G、Bの各色からなるフィルタ
ーを設けたものであり、その作製工程は多く、その品質
は各工程の影響を受けるもので、さらなる品質の向上の
要求にともない、製品製造の歩留りを上げることもます
ます難しくなってきている。また、その生産性の面、装
置の面からもできるだけ簡単な方法による生産がのぞま
れている。
2. Description of the Related Art In recent years, liquid crystal color display devices (LCD: L
liquid Crystal Display Dev
The use of liquid crystal color display color filters (LCD-CF:
Liquid CrystalDisplay Dev
ice-Color Filter) is increasingly required to be improved in quality and mass-produced. LCD is
The light passing through the R, G, and B color filters is controlled by applying an electric field to the liquid crystal to display the light. The LCD-CF used for this LCD is usually provided on a transparent glass substrate. It is provided with filters of each color of R, G, B, and its manufacturing process is many, its quality is affected by each process, and with the demand for further improvement of quality, it increases the yield of product manufacturing Things are getting more and more difficult. Further, from the viewpoint of productivity and equipment, production by the simplest method is desired.

【0003】LCD−CFの作製には、基板に顔料等を
分散させた着色感光材を塗布し、これを所定の形状に製
版する工程が、R、G、Bの各色に対応した着色感光材
の数(3回)あり、従来より、品質面、生産性の面、装
置の面から着色感光材の塗布をスピンコーティングによ
り基板表面全面に行う塗布方法が実施されている。この
塗布方法は図5(a)に示すように、洗浄処理がなされ
た基板510を回転装置の回転部530にセットし図5
((b))、基板510の表面上に着色感光材(塗布
液)540を滴らし(図5(c))、所定の回転数で回
転させながら、塗布液を基板510の全面に行き渡らす
だけのスピンコーティング方法であった。しかしなが
ら、このスピンコーティング方法の場合、塗布された着
色感光材の皮膜540Aの厚さは、図5(c)に示すよ
うに、基板510の外周辺部で基板の内部側に比べ極端
に厚くなるため、製版の過程において周辺部の着色感光
材が現像して除去したいのに除去されず部分的に残り、
汚れ等品質不良の一因になるという問題、着色感光材の
現像の際、着色感光材の厚さにより現像にバラツキが生
じてしまうという問題がある。また、スピンコーティン
グを行った際、着色感光材が基板の裏面へも回り込んで
しまうと言う問題もある。
[0003] In the production of LCD-CF, a process of applying a colored photosensitive material in which a pigment or the like is dispersed on a substrate and making a plate in a predetermined shape is performed by a colored photosensitive material corresponding to each of R, G, and B colors. (Three times), a coating method of applying a colored photosensitive material to the entire surface of a substrate by spin coating has been practiced from the viewpoint of quality, productivity, and apparatus. In this coating method, as shown in FIG. 5A, the substrate 510 having been subjected to the cleaning process is set on a rotating unit 530 of a rotating device.
((B)), the colored photosensitive material (coating solution) 540 is dropped on the surface of the substrate 510 (FIG. 5C), and the coating solution is spread over the entire surface of the substrate 510 while rotating at a predetermined rotation speed. It was only a spin coating method. However, in the case of this spin coating method, the thickness of the applied colored photosensitive material film 540A becomes extremely thick at the outer peripheral portion of the substrate 510 as compared with the inner side of the substrate, as shown in FIG. Therefore, in the process of plate making, the colored photosensitive material in the peripheral portion is developed and removed, but is not removed, but remains partially.
There is a problem that this causes poor quality such as contamination, and a problem that the thickness of the colored photosensitive material causes a variation in development when the colored photosensitive material is developed. There is also a problem that the colored photosensitive material goes around to the back surface of the substrate when spin coating is performed.

【0004】これに対応するため、着色感光材をスピン
コーティングした後、基板の周辺部のみ、着色感光材を
現像液で除去しておく方法も考えられるが、この方法の
場合は、現像液の使用や、除去する部分のみを他の部分
から隔離する等、処理が煩雑となる問題や、除去する周
辺部の幅にも限界があり、除去された後の最外側の着色
感光材の厚さは依然として基板の中心部に比べると厚
く、現像により、基板の中心部と基板の周辺側では現像
のバラツキが生じるという問題も依然として残る。ま
た、この方法の場合、依然として着色感光材の基板の裏
面への回り込みの問題は解決されない。
To cope with this, a method of spin-coating a colored photosensitive material and then removing the colored photosensitive material with a developing solution only at the peripheral portion of the substrate may be considered. There is a problem that processing becomes complicated, such as using or separating only the part to be removed from other parts, and there is a limit to the width of the peripheral part to be removed, and the thickness of the outermost colored photosensitive material after being removed Is still thicker than the central portion of the substrate, and the problem that the development causes variations in the development between the central portion of the substrate and the peripheral side of the substrate still remains. In addition, this method still does not solve the problem of the colored photosensitive material wrapping around the back surface of the substrate.

【0005】また、上記着色感光材の製版の位置合わせ
は、基板上にクロム等の遮光性の薄膜により形成された
位置合わせ用のマークを用いて行うが、上記のスピンコ
ーティングにより塗布された場合、マーク上に着色感光
材を塗布された状態となり、位置合わせがしずらいかっ
たり、位置合わせ精度が低下してしまうという問題もあ
る。
[0005] The positioning of the plate making of the colored photosensitive material is performed using a positioning mark formed on a substrate by a light-shielding thin film such as chrome. In addition, there is a problem that the colored photosensitive material is applied on the mark, and it is difficult to perform the alignment, and the alignment accuracy is reduced.

【0006】[0006]

【発明が解決しようとする課題】上記のように、LCD
−CFの作製において、着色感光材をスピンコーティン
グする場合には、品質面や、マークの位置合わせの点で
問題が生じ、この対応が求められていた。本発明は、こ
のような状況のもと、LCD−CFを作製する際に着色
感光材の塗布をスピンコーティングにて行い、且つ、従
来のスピンコーティングに起因する問題を解決できる方
法を提供しようとするものである。
As described above, LCDs
In the case of spin-coating a colored photosensitive material in the production of -CF, problems arise in terms of quality and alignment of marks, and such measures have been demanded. Under such circumstances, the present invention intends to provide a method capable of applying a colored photosensitive material by spin coating when fabricating an LCD-CF and solving a problem caused by the conventional spin coating. Is what you do.

【0007】[0007]

【課題を解決するための手段】本発明の基板への塗布方
法は、基板表面上に、基板に非浸透性の塗布液をスピン
コーティングにて塗布する方法であって、基板表面の所
望の領域のみに、該塗布液の溶媒に濡れにくい性質を与
える処理を施した後に、塗布液をスピンコーティングに
て塗布することを特徴とするものである。そして、上記
の基板がガラス基板、シリコンウエハ基板、フオトマス
ク用基板から選ばれた1つで、塗布液の溶媒に濡れにく
い性質を与える処理が、基板表面にオルガノシロキサン
を塗膜する処理であることを特徴とするものである。そ
してまた、上記ガラス基板がLCD−CF用ガラス基板
であり、塗布液が着色感光材料であることを特徴とする
ものである。そして、上記所望の領域が基板表面の外周
部ないし位置合わせ用マーク領域であることを特徴とす
るものである。
The method of coating a substrate according to the present invention is a method of applying a non-permeable coating solution to a substrate by spin coating on the surface of the substrate. Only after applying a treatment that gives the coating liquid a property of being hardly wetted by a solvent, the coating liquid is applied by spin coating. The above-mentioned substrate is one selected from a glass substrate, a silicon wafer substrate, and a photomask substrate, and the process of imparting the property of being hardly wetted by the solvent of the coating liquid is a process of coating an organosiloxane on the substrate surface. It is characterized by the following. Further, the glass substrate is a glass substrate for LCD-CF, and the coating liquid is a colored photosensitive material. The desired area is an outer peripheral portion of the substrate surface or an alignment mark area.

【0008】本発明の基板への塗布方法は、上記のよう
に塗布前に、基板表面の所望の領域に塗布液の溶媒に濡
れにくい性質を与えるもので、これにより、水溶液や極
性有機溶媒を含む塗布液の付着を防ぐものである。尚、
非浸透性とは、基板に塗布される塗布液が基板の内部に
浸透しない性質をいっており、従来、ガラス、金属、プ
ラスチック等が基板として用いられる。
[0008] The method of coating a substrate according to the present invention, as described above, imparts a property that the desired area of the substrate surface is hardly wetted by the solvent of the coating solution before the coating. This prevents adhesion of the coating solution contained. still,
Non-permeable means that a coating liquid applied to a substrate does not penetrate into the inside of the substrate. Conventionally, glass, metal, plastic, or the like is used as the substrate.

【0009】[0009]

【作用】本発明の基板への塗布方法は、上記のように構
成することにより、従来のスピンコーティングにおけ
る、基板外周部で塗布膜の厚さが基板の内部に比べ局部
的に厚くなりことに起因した、現像処理で除去されずに
一部が残ってしまうと言う問題、現像バラツキの問題、
マークの検出の問題を解決できるスピンコーティング方
法の提供を可能としている。詳しくは、基板がガラス基
板、シリコンウエハ基板、フオトマスク用基板から選ば
れた1つで、塗布液の溶媒に濡れにくい性質を与える処
理が、基板表面にオルガノシロキサンを塗膜する処理で
あることにより、比較的簡単にこれを達成している。具
体的には、ガラス基板がLCD−CF用ガラス基板であ
り、塗布液が着色感光材料とし、LCD−CFの作製に
用いられた場合には、スピンコーティングにおける基板
の中心部から外周近傍までの塗布膜の厚さをバラツキの
少ないものとでき、この結果、現像によるバラツキが少
ないものとしている。また、塗布後、基板の外周辺に塗
布膜が形成されず、且つ基板の中心部から外周近傍まで
の塗布膜の厚さをバラツキの少ないものとできるため、
現像残りの発生もほとんどなく、安定した現像を行うこ
とができるようになる。また、着色感光材をパターンニ
ングする際、あらかじめクロム等の金属膜により形成さ
れているマーク上には着色感光材が塗膜されないため、
マークの検出が従来のマーク上に塗膜された場合に比べ
容易で、位置合わせ精度を向上させることが可能であ
る。また、スピンコーティングを行った際、着色感光材
が基板の裏面へも回り込んでしまうと言う問題も殆どな
くなった。
According to the method for coating a substrate of the present invention as described above, the thickness of the coating film at the peripheral portion of the substrate in the conventional spin coating is locally increased as compared with the inside of the substrate. Due to the problem that a part remains without being removed by the development processing, the problem of development variation,
It is possible to provide a spin coating method that can solve the problem of mark detection. In detail, the substrate is one selected from a glass substrate, a silicon wafer substrate, and a photomask substrate, and the process of imparting the property of being hardly wetted by the solvent of the coating liquid is a process of coating an organosiloxane on the substrate surface. Achieving this relatively easily. Specifically, when the glass substrate is a glass substrate for LCD-CF, and the coating liquid is a colored photosensitive material and used in the production of LCD-CF, the spin coating extends from the center of the substrate to the vicinity of the outer periphery. The thickness of the coating film can be reduced in variation, and as a result, variation due to development is reduced. Further, after coating, no coating film is formed on the outer periphery of the substrate, and the thickness of the coating film from the central portion to the vicinity of the outer periphery of the substrate can be reduced in variation, so that
Stable development can be performed with little development residue. Also, when patterning the colored photosensitive material, since the colored photosensitive material is not coated on a mark formed in advance by a metal film such as chromium,
The detection of the mark is easier than in the case where a conventional mark is coated on the mark, and the alignment accuracy can be improved. In addition, when spin coating is performed, there is almost no problem that the colored photosensitive material goes around the back surface of the substrate.

【0010】[0010]

【発明の実施の形態】図1に示すように、本発明の基板
への塗布方法は行われる。先ず、基板110に洗浄処理
を施した(図1(a))後、基板110の塗布液を塗布
する側の面の所望の領域のみに、該塗布液の溶媒に濡れ
にくい性質を与える処理を施す。(図1(b)) この処理は、処理液を浸した部材(図示していない)、
例えばタコ印刷に使用するシリコーンゴム印版等を基板
110に押しつけることにより、基板110外周辺部の
所定幅およびマーク部等の箇所を塗布液の溶媒に濡れな
い皮膜120を形成する処理である。皮膜120として
は、オルガノシロキサンが挙げられる。尚、ここで用い
る基板表面に塗膜するオルガノシロキサンは、 H3 SiO−(RHSiO)n −SiH3 (1) の一般式(1)であらわされものであり、側鎖Rおよび
主鎖長nによってその特性が変化する。基板上へのオル
ガノシロキサンの皮膜の形成は、イソプロピルアルコー
ル等により溶解して塗布した後、加熱乾燥によりイソプ
ロピルアルコール等を蒸発させて行う。基板上に形成さ
れた皮膜は、溶剤等では容易に除去されず、溶出もな
く、耐熱性も高いため工程の初期に一度処理すれば、後
工程でも有効になる。次いで、基板110を回転装置の
回転部130にセットし(図1(c))、塗布液140
をその上に所定量滴らし、回転させ、スピンコーティン
グにて塗布する。(図1(d)) 塗布液140は基板110に非浸透性の液で、基板11
0としてはガラス基板、シリコンウエハ基板、フオトマ
スク用基板が挙げられる。このようにして、図1(d)
に示すように、図5(c)に示す従来の塗布方法の場合
と異なり、基板の外周辺部において局部的に塗布された
皮膜140Aの厚さは厚くならない。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS As shown in FIG. 1, a method for coating a substrate according to the present invention is performed. First, after a cleaning process is performed on the substrate 110 (FIG. 1A), only a desired region on the surface of the substrate 110 to which the coating liquid is applied is provided with a property that makes the coating liquid hardly wet with the solvent. Apply. (FIG. 1B) This processing is performed by a member (not shown) immersed in a processing liquid,
For example, by pressing a silicone rubber printing plate or the like used for octopus printing on the substrate 110, a process of forming a coating 120 that does not wet a predetermined width of the outer peripheral portion of the substrate 110 and a portion such as a mark portion with the solvent of the coating liquid. As the film 120, an organosiloxane may be used. Here, the organosiloxane coated on the substrate surface is represented by the general formula (1) of H 3 SiO— (RHSiO) n —SiH 3 (1), and has a side chain R and a main chain length n. Changes its characteristics. The formation of the organosiloxane film on the substrate is performed by dissolving and applying with isopropyl alcohol or the like and then evaporating isopropyl alcohol or the like by heating and drying. The film formed on the substrate is not easily removed by a solvent or the like, is not eluted, and has high heat resistance. Next, the substrate 110 is set on the rotating unit 130 of the rotating device (FIG. 1C), and the coating solution 140 is applied.
Is dropped thereon in a predetermined amount, rotated, and applied by spin coating. (FIG. 1D) The coating liquid 140 is a liquid that is impermeable to the substrate 110,
Examples of 0 include a glass substrate, a silicon wafer substrate, and a photomask substrate. In this way, FIG.
As shown in FIG. 5C, unlike the conventional coating method shown in FIG. 5C, the thickness of the coating 140A applied locally on the outer peripheral portion of the substrate does not increase.

【0011】[0011]

【実施例】本発明の基板への塗布方法の実施例を図にも
とづいて説明する。はじめに実施例1を挙げる。本実施
例は6インチφのシリコンウエハ基板へレジストの塗布
を行う場合で、図2(a)は、レジスト塗布後の状態の
基板210を示している。尚、図2(b)は塗布後の基
板210を、露光装置で、基板のオリフラ(オリエンテ
ーションフラットネス)211で位置合わせする状態を
示しており、図2(b)(イ)は位置合わせ前、図2
(b)(ロ)は位置合わせ後である。先ず、シリコンウ
エハ基板の外周辺部分に、オルガノシロキサン(デカメ
チルテトラシロキサン、式(1))の1%弱酸性(硫酸
酸性)イソプロピルアルコール溶液を塗布して、加熱乾
燥によりイソプロピルアルコールを蒸発させてオルガノ
シロキサンの皮膜220を形成した。次いで、このシリ
コンウエハ基板に対し、スピンコーティングによりエチ
ルセルソルブ等を溶媒とするポジ型レジスト(AZ13
50、ヘキストジャパン社製)を1000rpmの回転
数で60秒回転させ塗布したが、オルガノシロキサンの
皮膜はエチルセルソルブ等の溶媒に濡れないため、オル
ガノシロキサンの皮膜が形成されている基板外周辺には
レジストが付着されず、図2に示すようにレジストは9
935Å厚に形成された。オルガノシロキサン溶液の塗
布は、綿棒を用いて、基板の外縁をなぞるようにして行
った。外周辺部にレジストが塗布されないため、レジス
トの塗布膜厚も外周辺に近い箇所においても、オルガノ
シロキサン皮膜を形成しない従来と比べ、基板の内部の
膜厚と大きく変わることがなく、均一になった。基板に
塗布されたレジストへ露光するマスク(図示していな
い)とのアライメントを行う場合、露光装置に基板をセ
ットし、あらかじめ基板のオリフラ(オリエンテーショ
ンフラットネス)211で方向を決めた基板の位置合わ
せするが、図2(b)に示すように、本実施例の場合に
は、外周辺部にレジストが塗布されないため、レジスト
膜240が基板210の外周辺部には塗布されずアライ
メント時にローラ260に接することがない。また、周
辺部のレジストの膜厚も基板210の内部の膜厚に近い
ため、近接露光の際にレジストにマスクが接触するとい
うこともない。尚、図5に示す従来のオルガノシロキサ
ン皮膜を形成しない場合には、露光装置に基板をセット
し、基板のオリフラ(オリエンテーションフラットネ
ス)211で基板の位置合わせする際、外周辺部のレジ
ストとローラとが接触が起こり、これにより、レジスト
膜が基板から剥がれ、品質へ影響があったり、レジスト
とを露光する場合にも、外周辺部の膜厚の大きい部分の
レジスト膜がマスクに接触して、レジストの剥れが生じ
ることがあったりした。このように、本実施例において
は、基板の外周辺部にレジストを塗布しないため、塗布
されるレジストの面内バラツキが良くなるとともに、レ
ジスト膜の剥がれによる品質への影響が無くなった。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the method for coating a substrate according to the present invention will be described with reference to the drawings. Example 1 will be described first. In this embodiment, a resist is applied to a silicon wafer substrate having a diameter of 6 inches. FIG. 2A shows the substrate 210 after the resist is applied. FIG. 2B shows a state in which the substrate 210 after application is aligned by an exposure apparatus using an orientation flatness (orientation flatness) 211 of the substrate, and FIGS. , FIG. 2
(B) (b) is after alignment. First, a 1% weakly acidic (sulfuric acid) isopropyl alcohol solution of an organosiloxane (decamethyltetrasiloxane, formula (1)) is applied to the outer peripheral portion of a silicon wafer substrate, and isopropyl alcohol is evaporated by heating and drying. An organosiloxane coating 220 was formed. Next, a positive resist (AZ13) using ethylcellosolve or the like as a solvent is applied to the silicon wafer substrate by spin coating.
50, manufactured by Hoechst Japan Co., Ltd.) and applied at a rotation speed of 1000 rpm for 60 seconds. No resist is attached, and as shown in FIG.
It was formed to be 935 ° thick. The application of the organosiloxane solution was performed using a cotton swab so as to trace the outer edge of the substrate. Since the outer periphery is not coated with the resist, the thickness of the resist coating is uniform even at locations near the outer periphery without significantly changing from the internal thickness of the substrate, compared to the conventional case where the organosiloxane film is not formed. Was. When performing alignment with a mask (not shown) for exposing the resist applied to the substrate, the substrate is set in an exposure apparatus, and the alignment of the substrate is determined in advance with the orientation flatness (orientation flatness) 211 of the substrate. However, as shown in FIG. 2B, in the case of the present embodiment, since the resist is not applied to the outer peripheral portion, the resist film 240 is not applied to the outer peripheral portion of the substrate 210, and the roller 260 Never touch. In addition, since the thickness of the resist in the peripheral portion is also close to the thickness in the inside of the substrate 210, the mask does not come into contact with the resist during the proximity exposure. In the case where the conventional organosiloxane film shown in FIG. 5 is not formed, the substrate is set in an exposure apparatus, and when the substrate is aligned with an orientation flatness (orientation flatness) 211 of the substrate, a resist and a roller in an outer peripheral portion are used. This causes the resist film to peel off from the substrate, affecting the quality and exposing the resist, even when the outer peripheral portion of the resist film having a large thickness is in contact with the mask. In some cases, the resist was peeled off. As described above, in this embodiment, since the resist is not applied to the outer peripheral portion of the substrate, the in-plane variation of the applied resist is improved, and the influence of the peeling of the resist film on the quality is eliminated.

【0012】次に、実施例2を挙げる。本実施例は、一
面にクロムからなるマークを設けた300mm×400
mmの四角形のガラス基板に対し、マーク上を覆うよう
にスピンコーティングにより水系感光性樹脂を塗布する
場合で、図3(a)は、塗布後の状態を示したものであ
る。尚、図3(b)は従来の図5に示す方法により塗布
した場合の図である。先ず、ガラス基板の外周辺部分と
マークの部分に、オルガノシロキサン(デカメチルテト
ラシロキサン、式(1))の1%弱酸性(硫酸酸性)イ
ソプロピルアルコール溶液を塗布して、加熱乾燥により
イソプロピルアルコールを蒸発させてオルガノシロキサ
ンの皮膜を形成した。次いで、このガラス基板に対し、
スピンコーティングにより水を溶媒とするネガ型感光性
樹脂(重クロム酸+ゼラチン水溶液)を1500rpm
の回転数で塗布したが、オルガノシロキサンの皮膜は水
溶媒に濡れないため、オルガノシロキサンの皮膜が形成
されている基板外周辺およびマーク部には感光性樹脂が
付着されず、図3(a)に示すように感光性樹脂膜が形
成された。本実施例の場合も、実施例1と同様、基板3
10の外周辺部に感光性樹脂を塗布しないため、塗布さ
れる感光性樹脂膜340の面内バラツキが良くなり、現
像によるバラツキも改善された。また、マーク部370
に感光性樹脂膜340が塗布されないため、図3(b)
に示す従来の塗布方法により塗布された基板の場合のよ
うに、マークが検出しづらくなることはなく、位置合わ
せ精度も改善された。
Next, a second embodiment will be described. The present embodiment is a 300 mm × 400
An aqueous photosensitive resin is applied to a square glass substrate by spin coating so as to cover the mark, and FIG. 3 (a) shows a state after the application. FIG. 3 (b) is a diagram in the case of applying by the conventional method shown in FIG. First, a 1% weakly acidic (sulfuric acid) isopropyl alcohol solution of an organosiloxane (decamethyltetrasiloxane, formula (1)) is applied to an outer peripheral portion and a mark portion of a glass substrate, and isopropyl alcohol is heated and dried. Upon evaporation, an organosiloxane film was formed. Next, for this glass substrate,
Negative-type photosensitive resin (dichromic acid + gelatin aqueous solution) using water as a solvent by spin coating at 1500 rpm
However, since the organosiloxane film does not wet with the water solvent, the photosensitive resin does not adhere to the outer periphery of the substrate and the mark portion where the organosiloxane film is formed. As a result, a photosensitive resin film was formed. Also in the case of the present embodiment, the substrate 3
Since the photosensitive resin is not applied to the outer periphery of the photosensitive resin film 10, the in-plane variation of the applied photosensitive resin film 340 is improved, and the variation due to development is also improved. Also, the mark part 370
Since the photosensitive resin film 340 is not applied to the
As in the case of the substrate coated by the conventional coating method shown in (1), the mark was not difficult to detect, and the alignment accuracy was improved.

【0013】尚、本実施例に塗布方法により塗膜された
基板の図3(a)のA1−A2間のの膜厚は図4のL1
に示すようなった。尚、図4のL2は、図3(b)に示
す従来の方法により塗布された基板のA3−A4におけ
る膜厚を示したものである。L1はL2に比べバラツキ
の小さきことが良く分かる。
The thickness of the substrate coated by the coating method in this embodiment between A1 and A2 in FIG. 3A is L1 in FIG.
It was as shown. L2 in FIG. 4 indicates the film thickness of A3-A4 of the substrate applied by the conventional method shown in FIG. 3B. It can be clearly seen that L1 has a smaller variation than L2.

【0014】次に、実施例3を挙げる。本実施例は、片
面にクロムからなるマークを設けた300mm×400
mmの四角形のガラス基板に対し、マーク上を覆うよう
にスピンコーティングにより、エチルセルソルブ等を溶
媒とする有機溶剤系感光性材を塗布する場合である。本
実施例の場合、基本的には実施例2と同様に処理を行っ
た。先ず、ガラス基板の外周辺部分とマークの部分に、
オルガノシロキサン(デカメチルテトラシロキサン、式
(1))の1%弱酸性(硫酸酸性)イソプロピルアルコ
ール溶液を塗布して、加熱乾燥によりイソプロピルアル
コールを蒸発させてオルガノシロキサンの皮膜を形成し
た。次いで、このガラス基板に対し、スピンコーティン
グによりエチルセルソルブ等を溶媒とするポジ型感光性
樹脂(OFPR800−20、東京応化工業株式会社社
製)を1500rpmの回転数で塗布したが、オルガノ
シロキサンの皮膜はチルセルソルブ等の溶媒に濡れない
ため、オルガノシロキサンの皮膜が形成されている基板
外周辺およびマーク部には感光性樹脂が付着されず、実
施例2の図3と同じ状態に 感光性樹脂膜が1.71μ
m厚に形成された。本実施例の場合も、実施例2と同
様、基板の外周辺部に感光性樹脂を塗布しないため、塗
布される感光性樹脂膜の面内バラツキが良くなり、現像
によるバラツキも改善され、且つ、マーク部に感光性樹
脂膜が塗布されないため、位置合わせ精度も改善され
た。
Next, a third embodiment will be described. In this embodiment, a 300 mm × 400
In this case, an organic solvent-based photosensitive material using ethyl cellosolve or the like as a solvent is applied to a square glass substrate of mm by spin coating so as to cover the mark. In the case of the present embodiment, processing was basically performed in the same manner as in the second embodiment. First, on the outer peripheral part and the mark part of the glass substrate,
A 1% weakly acidic (sulfuric acid) isopropyl alcohol solution of an organosiloxane (decamethyltetrasiloxane, formula (1)) was applied, and the isopropyl alcohol was evaporated by heating and drying to form an organosiloxane film. Next, a positive photosensitive resin (OFPR800-20, manufactured by Tokyo Ohka Kogyo Co., Ltd.) using ethyl cellosolve or the like as a solvent was applied to the glass substrate at a rotation speed of 1500 rpm by spin coating. Since the film does not wet with a solvent such as Chill Cell Solve, the photosensitive resin does not adhere to the outer periphery and the mark portion where the organosiloxane film is formed, and the photosensitive resin film remains in the same state as in FIG. Is 1.71μ
m thickness. Also in the case of the present embodiment, the photosensitive resin is not applied to the outer peripheral portion of the substrate similarly to the embodiment 2, so that the in-plane variation of the applied photosensitive resin film is improved, the variation due to development is also improved, and Since the photosensitive resin film is not applied to the mark portion, the positioning accuracy is also improved.

【0015】[0015]

【効果】本発明は、上記のように、塗布液の用材に濡れ
ない皮膜で基板の表面を覆う処理を施した後にスピンコ
ーティングにより基板上に塗膜するもので、第一には、
基板の外周辺領域のみを塗布されないようにして、塗布
された塗布膜の面内バラツキが良くなる塗布方法を提供
を可能としている。塗布液が感光性樹脂であれば、結果
として、現像によるバラツキも改善される。そして、第
二には、マーク部等所望の領域には塗布されないように
して塗膜することを可能としするもので、例えばマーク
部に感光性樹脂膜が塗布されないようにした場合には、
感光性樹脂にてパターニングする際に、その位置合わせ
し易いものとし、結果的に位置合わせ精度の良いものと
できる。
According to the present invention, as described above, a process of covering the surface of a substrate with a film that does not wet the material of the coating solution is performed, and then a film is formed on the substrate by spin coating.
This makes it possible to provide a coating method in which the in-plane variation of the applied coating film is improved by preventing only the outer peripheral region of the substrate from being applied. If the coating liquid is a photosensitive resin, as a result, variations due to development are also improved. And, secondly, it is possible to apply a coating so as not to be applied to a desired area such as a mark portion.For example, when a photosensitive resin film is not applied to a mark portion,
When patterning with a photosensitive resin, the alignment can be easily performed, and as a result, the alignment accuracy can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態を示した図FIG. 1 shows an embodiment of the present invention.

【図2】実施例1の塗布方法により作成された塗布膜の
状態を示した図
FIG. 2 is a diagram illustrating a state of a coating film formed by a coating method according to a first embodiment.

【図3】実施例2の塗布方法により作成された塗布膜の
状態を示した図
FIG. 3 is a diagram showing a state of a coating film formed by a coating method according to a second embodiment.

【図4】実施例2の塗布方法と従来の塗布方法に於ける
膜厚の分布を説明するための図
FIG. 4 is a diagram for explaining a film thickness distribution in the coating method of Example 2 and a conventional coating method.

【図5】従来のLCD−CFの着色感光性樹脂の塗布方
法を説明するための図
FIG. 5 is a view for explaining a conventional method of applying a colored photosensitive resin of LCD-CF.

【符号の説明】[Explanation of symbols]

110 基板 120 皮膜 130 回転部 131 パッキン 140 塗布液 140A 皮膜 210 基板 211 オリフラ(オリエンテーションフラ
ット) 220 皮膜 240 レジスト 260 ローラ 310 基板 310A (従来の)塗布基板 320 皮膜 340 感光性樹脂膜 370 マーク 510 基板 530 回転部 531 パッキン 540 塗布液 540A 皮膜
Reference Signs List 110 substrate 120 coating 130 rotating part 131 packing 140 coating liquid 140A coating 210 substrate 211 orientation flat (orientation flat) 220 coating 240 resist 260 roller 310 substrate 310A (conventional) coating substrate 320 coating 340 photosensitive resin film 370 mark 510 substrate 530 rotation Part 531 Packing 540 Coating liquid 540A Coating

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 基板表面上に、基板に非浸透性の塗布液
をスピンコーティングにて塗布する方法であって、基板
表面の所望の領域のみに、該塗布液の溶媒に濡れにくい
性質を与える処理を施した後に、塗布液をスピンコーテ
ィングにて塗布することを特徴とする基板への塗布方
法。
1. A method for applying a non-permeable coating liquid to a substrate by spin coating on the substrate surface, wherein the coating liquid has a property that it is hardly wetted by a solvent of the coating liquid only to a desired region of the substrate surface. A method for coating a substrate, comprising applying a coating solution by spin coating after performing the treatment.
【請求項2】 請求項1の基板がガラス基板、シリコン
ウエハ基板、フオトマスク用基板から選ばれた1つで、
塗布液の溶媒に濡れにくい性質を与える処理が、基板表
面にオルガノシロキサンを塗膜する処理であることを特
徴とする基板への塗布方法。
2. The substrate according to claim 1, wherein the substrate is one selected from a glass substrate, a silicon wafer substrate, and a photomask substrate.
A coating method for a substrate, wherein the treatment for imparting the property of making the coating liquid less wettable by a solvent is a treatment for coating an organosiloxane on the substrate surface.
【請求項3】 請求項2のガラス基板がLCD−CF用
ガラス基板であり、塗布液が着色感光材料であることを
特徴とする基板への塗布方法。
3. A method for coating a glass substrate according to claim 2, wherein the glass substrate is a glass substrate for LCD-CF, and the coating liquid is a colored photosensitive material.
【請求項4】 請求項1ないし3の所望の領域が基板表
面の外周部ないし位置合わせ用マーク領域であることを
特徴とする基板への塗布方法。
4. A method according to claim 1, wherein the desired region is an outer peripheral portion of the substrate surface or an alignment mark region.
JP8196936A 1996-07-09 1996-07-09 Method of applying coating liquid onto wafer Withdrawn JPH1027748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8196936A JPH1027748A (en) 1996-07-09 1996-07-09 Method of applying coating liquid onto wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8196936A JPH1027748A (en) 1996-07-09 1996-07-09 Method of applying coating liquid onto wafer

Publications (1)

Publication Number Publication Date
JPH1027748A true JPH1027748A (en) 1998-01-27

Family

ID=16366125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8196936A Withdrawn JPH1027748A (en) 1996-07-09 1996-07-09 Method of applying coating liquid onto wafer

Country Status (1)

Country Link
JP (1) JPH1027748A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016136572A (en) * 2015-01-23 2016-07-28 株式会社東芝 Substrate processing device, control program, and control method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016136572A (en) * 2015-01-23 2016-07-28 株式会社東芝 Substrate processing device, control program, and control method

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