JPH10261744A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize reduction of cost without damaging insulating and heat dissipating properties, in a semiconductor device wherein a plurality of power elements are arranged and the whole device is built in an unified body with mold resin. SOLUTION: An insulating layer 16 having thermal conductivity is arranged on the surface of the side facing a metal frame 12 of a heat dissipating plate 14. An insulating layer 16 is previously formed on the heat dissipating plate 14. Molding is performed by using mold resin, in the state that the heat dissipating plate 14 is fixed on the metal frame 12 on which a power element 11 is mounted, so that a semiconductor device can be completed by one time molding.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device, and more particularly to a mold type semiconductor device having a plurality of power elements and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device in which a plurality of power elements are mounted on a metal frame, various devices have been devised to ensure insulation and heat radiation between the power elements.

FIG. 13 is a schematic sectional view of a conventional semiconductor device of this kind. In FIG. 13, a plurality of power elements 1 (the figure shows an arbitrary one) are mounted on a metal frame 2, and the power element 1 and the metal frame 2 are electrically connected by bonding wires 3. It is connected. Further, on the opposite side of the power element mounting surface of the metal frame 2, a metal heat radiating plate 4 for radiating heat of the metal frame 2 to the outside is disposed at a predetermined interval,
The entire device has a structure integrally molded with a mold resin 5. At the time of this molding, a thin layer of the molding resin 5 is formed in the gap between the metal frame 2 and the heat radiating plate 4, thereby ensuring insulation and heat radiation between the power elements.

[0004]

Problems to be Solved by the Invention FIGS. 14A to 14D
FIG. 3 is a schematic cross-sectional view showing a molding step of the conventional semiconductor device described above.

First, after mounting the power element 1 on the metal frame 2, the power element 1 and the metal frame 2 are connected with the bonding wires 3 (FIG. 14A). Next, the first molding is performed by the transfer molding method, and the power element mounting surface side is covered with the molding resin 5a (FIG. 1).
4 (B)). At this time (at the time of the first molding), a convex portion 6 made of the mold resin 5a is partially provided on the surface of the metal frame 2 opposite to the power element mounting surface. Next, the heat sink 4 is set (FIG. 14C). Then, the second molding is performed by the transfer molding method, and the entire device is covered with the mold resin 5b (FIG. 14D). At this time, since the mold resin 5b flows into the gap between the protrusions 6, that is, between the metal frame 2 and the heat sink 4, the metal frame 2 and the heat sink 4 are partitioned by the thin layer of the mold resin 5b. The surface of the heat sink 4 opposite to the surface facing the metal frame 2 has a structure exposed from the mold resin 5b.

[0006] Incidentally, the transfer molding described above is more expensive than the injection molding, so that the conventional transfer molding requires a higher cost.
When the transfer molding is performed a number of times, there is a problem that the number of processing devices and dies increases and the cost increases. In addition, since the molding resin 5b flows between the metal frame 2 and the heat sink 4, an expensive resin having low viscosity and good heat conductivity is required as the second molding resin 5b. In addition to the space between the heat sink 4 and the mold resin 5a
However, there is a problem that the cost of the mold resin increases. Furthermore, in order to maintain insulation, the space between the heat sink 4 and the metal frame 2 must be completely filled with resin, but it is conceivable that bubbles are generated in the resin during molding and the insulation is reduced. . In particular, if the interval is small, the resin does not easily enter, so that the insulating property tends to decrease. As described above, the conventional semiconductor device has a problem that the insulating property is apt to be deteriorated structurally, so that it is difficult to adjust the gap and manage the molding conditions and the like in order to prevent this.

An object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a semiconductor device and a method of manufacturing the same, which realize a reduction in cost without impairing insulation and heat dissipation. .

[0008]

According to a first aspect of the present invention, there is provided a power element, a metal frame having a portion for mounting the power element, and a connecting member for electrically connecting the power element and the metal frame. And a radiator plate for radiating the heat of the metal frame to the outside. In a semiconductor device in which the entire device is integrally molded with a mold resin, a surface of the radiator plate facing the metal frame is provided in advance. An insulating layer having a thermal conductivity of 1 W / m · k or more is formed.

According to the first aspect of the present invention, an insulating layer is previously formed on one surface of the heat radiating plate, and the heat radiating plate is molded with a mold resin in a state where the heat radiating plate is mounted on the metal frame on which the power element is mounted. Thus, the semiconductor device can be completed by one transfer molding.

According to a second aspect of the present invention, a plurality of power elements are provided;
A metal frame having a portion for mounting the power element,
A connection member that electrically connects the power element and the metal frame, and a heat radiating plate that radiates heat of the metal frame to the outside, wherein in a semiconductor device in which the entire device is integrally molded with mold resin, A heat conductivity of 1 W / m ·
k or more insulating layers are formed.

According to the second aspect of the present invention, an insulating layer is formed in advance on the surface of the metal frame opposite to the heat radiating plate, and the metal frame is molded with a molding resin in a state of being attached to the heat radiating plate. Thus, the semiconductor device can be completed by one transfer molding.

A third aspect of the present invention is characterized in that, in the first aspect, the insulating layer is a thermoplastic resin formed by injection molding.

According to a fourth aspect of the present invention, in the first aspect, the insulating layer is an insulating member attached to the heat sink via an adhesive layer.

According to a fifth aspect of the present invention, in the first or second aspect, the insulating layer is a ceramic layer.

According to a sixth aspect of the present invention, in the first aspect, the insulating layer is an alumina substrate, and the metal frame and the heat radiating plate are copper.

According to a seventh aspect of the present invention, in the first aspect, the insulating layer is an aluminum nitride substrate, and the metal frame and the heat radiating plate are copper.

According to an eighth aspect of the present invention, in the method of the sixth or seventh aspect, the insulating layer, the metal frame, and the heat sink are formed integrally by overlap bonding.

A ninth aspect of the present invention is characterized in that, in the first aspect of the present invention, the insulating layer is a thermosetting resin formed by a heating and laminating press.

According to a tenth aspect of the present invention, a plurality of power elements, a metal frame having a portion on which the power elements are mounted, a connecting member for electrically connecting the power element and the metal frame, A method of manufacturing a semiconductor device having a heat radiating plate for dissipating heat to the outside and forming the entire device integrally with a mold resin, wherein an insulating layer is formed on a surface of the heat radiating plate on a side in contact with the metal frame. And fixing the insulating layer and a surface of the metal frame opposite to the power element mounting surface in a fixed position, and integrally molding the entire device with a mold resin.

In the tenth aspect of the present invention, an insulating layer is previously formed on one surface of the radiator plate, and the heat radiator plate is molded with a mold resin in a state where the radiator plate is mounted on the metal frame on which the power element is mounted. Thus, the semiconductor device can be completed by one transfer molding.

According to an eleventh aspect of the present invention, a plurality of power elements, a metal frame having a portion on which the power elements are mounted, a connection member for electrically connecting the power element and the metal frame, A method of manufacturing a semiconductor device having a heat radiating plate for radiating heat to the outside and forming the entire device integrally with a mold resin, wherein an insulating layer is formed on a surface of the metal frame on a side in contact with the heat radiating plate. And a step of fixing the insulating layer and the heat sink in place, and integrally molding the entire device with a mold resin.

According to the eleventh aspect of the present invention, an insulating layer is formed in advance on the surface of the metal frame opposite to the heat radiating plate, and molding with a mold resin is performed with the metal frame attached to the heat radiating plate. Thus, the semiconductor device can be completed by one transfer molding.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a semiconductor device and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a schematic sectional view showing a sectional structure of the semiconductor device according to the first embodiment, and FIG. 2 is a schematic plan view thereof.

In FIG. 1, a plurality of power elements 11 are mounted in a mounting area on a metal frame 12.
Each power element 11 and the metal frame 12 are electrically connected by a bonding wire 13 as a connecting member. A heat radiating plate 14 for radiating the heat of the metal frame 12 to the outside is provided on the opposite side of the power mounting surface of the metal frame 12.

An insulating layer 16 having a thermal conductivity of 1 W / m · k or more is formed on the surface of the heat radiating plate 14 facing the metal frame 12. As the insulating layer 16, for example, a high heat conductive insulating resin having a high filler content such as polyphenylene sulfide (PPS) or liquid crystal polymer (LCP) can be used. Further, the entire device is integrally formed of a mold resin 15, and a surface of the heat radiating plate 14 on the side opposite to the side where the insulating layer 16 is formed is exposed from the mold resin 15.

Next, the manufacturing process of the semiconductor device will be described with reference to FIG.
This will be described with reference to (A) to (C). Here, only the steps characteristic of this embodiment are shown.

First, the power element 1 is placed on the metal frame 12.
1 is mounted, and the power element 11 and the metal frame 12 are connected with the bonding wires 13 (FIG. 3).
(A)). Next, the heat radiating plate 14 is brought into close contact with the surface of the metal frame 12 opposite to the power element mounting surface at a fixed position (FIG. 3B). An insulating layer 16 having thermal conductivity is formed on the heat radiating plate 14 on the surface facing the metal frame 12 in advance. Then, the surface of the heat sink 14 opposite to the surface facing the metal frame 12 is exposed,
The entire device is covered with a mold resin 15 (FIG. 3).
(C)).

According to the semiconductor device having the above-described structure, the insulating layer 16 is formed on the heat radiating plate 14 in advance, and the heat radiating plate 14 is adhered to the surface opposite to the power element mounting surface of the metal frame 12 at a fixed position. By performing molding in a state in which the semiconductor device is formed, a semiconductor device can be completed by one molding.

As described above, in the semiconductor device according to the first embodiment, the number of molding steps can be reduced as compared with the conventional semiconductor device shown in FIG. Is possible, and the cost can be reduced. Further, since there is no need to flow the molding resin 15 between the metal frame 12 and the heat radiating plate 14, a special molding resin having a low viscosity and a high thermal conductivity as in the related art is not required. Therefore, the entire apparatus can be molded without using an expensive resin, so that the cost of the mold resin can be reduced. Furthermore, since a special mold resin is not used, complicated process control such as adjustment of a gap and molding conditions is not required.

In particular, since the insulating layer 16 is made of an insulating resin having high thermal conductivity, the above-described cost reduction can be realized without impairing the insulation and heat radiation between the power elements.

Next, another embodiment of the insulating layer formed on the heat sink 14 will be described.

FIG. 4 shows a heat sink 1 according to the second embodiment.
FIG. 4 is a schematic sectional view of FIG. In this embodiment, a ceramic layer 17 is formed by thermal spraying on a heat radiating plate 14 as an insulating layer. As the ceramic layer 17, for example, alumina (Al ₂ O ₃₎ can be used. By using the ceramic layer 17 having good thermal conductivity as the insulating layer as in the second embodiment, the thermal conductivity of the insulating layer can be improved, so that the heat radiation of the heat sink 14 can be improved. Can be.

FIG. 5 shows a heat sink 1 according to the third embodiment.
FIG. 4 is a schematic sectional view of FIG. In this embodiment, an insulating sheet 19 having an adhesive layer 18 formed on one side as an insulating layer is attached to a heat sink 14, and the insulating sheet 19 may be, for example, about 50 μm thick. According to the third embodiment, the formation of the insulating layer is easier than the method of spraying or coating. In addition, by using an extremely thin insulating sheet 19 as the insulating layer, the thermal conductivity of the insulating layer can be improved.
Can improve heat dissipation.

The heat radiating plate 14 provided with the above-described ceramic layer 17 or insulating sheet 19 is used as it is in the step of FIG.

Next, a semiconductor device according to a fourth embodiment will be described.

FIG. 6 is a schematic sectional view showing a sectional structure of a semiconductor device according to the fourth embodiment.

In FIG. 6, a plurality of power elements 11 are mounted in a mounting area on a metal frame 12, and each power element 11 and the metal frame 12 are electrically connected by a bonding wire 13 as a connecting member. It is connected. On the opposite side of the power element mounting surface of the metal frame 12, an insulating layer 20 having thermal conductivity is formed. As the insulating layer 20, the metal frame 12
A ceramic layer formed by thermal spraying on the surface opposite to the power element mounting surface can be used. Further, a heat radiating plate 14 for radiating the heat of the metal frame 12 to the outside is provided on the back surface of the insulating layer 20. The entire device is integrally formed of a molding resin 15, and the surface of the heat sink 14 opposite to the surface facing the insulating layer 20 is molded resin 1.
5 is exposed.

Next, the manufacturing process of the semiconductor device will be described with reference to FIG.
This will be described with reference to (A) to (D). Here, only the steps characteristic of this embodiment are shown.

First, an insulating layer 20 is formed on the surface of the metal frame 12 opposite to the surface on which the power element is mounted (FIG. 7).
(A)). Next, the power element 11 is mounted on the surface of the metal frame 12 opposite to the surface on which the insulating layer 20 is formed, and the bonding wire 1 is connected between the power element 11 and the metal frame 12.
3 (FIG. 7B). Next, the insulating layer 20 and the heat sink 14 are brought into close contact with each other at a fixed position (FIG. 7C). Then, the entire device is molded resin 1 such that the surface of the heat sink 14 opposite to the surface facing the metal frame 12 is exposed.
5 (FIG. 7D).

According to the semiconductor device having the above-described configuration, the insulating layer 20 is formed on the surface of the metal frame 12 opposite to the power element mounting surface in advance, and
The semiconductor device can be completed by a single molding by performing molding in a state where it is closely adhered to the surface of the metal frame 12 on which the insulating layer 20 is formed at a fixed position.

As described above, in the semiconductor device of the above embodiment, the number of molding steps can be reduced as compared with the conventional semiconductor device shown in FIG. 13, so that the number of processing devices and dies can be reduced. , Cost can be reduced. Further, since there is no need to flow the molding resin 15 between the metal frame 12 and the heat radiating plate 14, a special molding resin having a low viscosity and a high thermal conductivity as in the related art is not required. Therefore, the entire apparatus can be molded without using an expensive resin, so that the cost of the mold resin can be reduced. Furthermore, since a special mold resin is not used, complicated process control such as adjustment of a gap and molding conditions is not required.

In particular, when a ceramic layer having good thermal conductivity is used as the insulating layer 20, the above-described cost reduction can be realized without impairing the insulation and heat radiation between the power elements. .

In the semiconductor device according to the fourth embodiment, the power element 11 is mounted on the metal frame 12 after first forming the insulating layer 20 on the metal frame 12 in order to increase the efficiency of the mounting operation. doing. Since the mounting of the power element 11 to the metal frame 12 is generally performed by high-temperature soldering, it is not possible to use a member that is thermally deformed, such as a resin. Metal frame 12 before device mounting
Therefore, mounting work can be made more efficient.

In the fourth embodiment, the insulating layer 20
Although an example using a ceramic layer has been described, other insulating members may be used as long as they have good thermal conductivity and excellent heat resistance.

FIG. 8 is a schematic sectional view showing a sectional structure of a semiconductor device according to the fifth embodiment, and FIG. 9 is a schematic plan view thereof. In this embodiment, an insulating layer, a metal frame, and a heat sink are previously formed integrally by overlapping and joining, and the basic configuration of each part is the same as in the above embodiment. That is, in the mounting area on the metal frame 22,
A plurality of power elements 21 are mounted, and a bonding wire 2 is provided between each power element 21 and the metal frame 22.
3 are electrically connected. An insulating layer 26 having thermal conductivity is provided on the opposite side of the power element mounting surface of the metal frame 22, and a heat radiating plate 24 is provided on the back surface of the insulating layer 26.

An alumina substrate is used for the insulating layer 26, and copper is used for the metal frame 22 and the heat sink 24, respectively. In addition, as the insulating layer 26, a member having high thermal conductivity such as an aluminum nitride substrate can be used.
These members are previously formed integrally by overlap joining by a method described later. The entire device is integrally formed of a mold resin 25, and the surface of the heat sink 24 opposite to the surface facing the insulating layer 26 is formed of the mold resin 25.
It is a structure exposed from.

Next, the manufacturing process of the semiconductor device is shown in FIG.
This will be described below. However, the insulating layer 26, the metal frame 22, and the heat radiating plate 24, which are features of this embodiment,
Only the manufacturing process will be described.

First, the insulating layer 26 made of an alumina substrate
And a metal frame 22 made of copper and a radiator plate 24 are superimposed on each other (FIG. 10A), and heat-treated (with a melting point of copper of 1).
(Oxygen content is controlled to 0.008 to 0.39 wt /% at a temperature of 083 ° C or less and a Cu-O eutectic temperature of 1065 ° C or more)
By doing so, a eutectic liquid phase is generated on the surface of the copper. Since the eutectic liquid phase functions as an adhesive, copper-alumina is joined (FIG. 10B).

According to the semiconductor device having the above-described structure, the semiconductor device can be completed by one molding, so that the number of processing devices and dies can be reduced, and the cost can be reduced. Since there is no need to flow the molding resin between the metal frame and the heat radiating plate, a special molding resin is not required, so that the cost of the molding resin can be reduced and the process management can be easily performed.

Further, the semiconductor device of this embodiment has the following specific effects. That is, as shown in FIG. 8, there has conventionally existed one in which the insulating layer 26 was formed of an alumina substrate and the metal frame 22 and the heat radiating plate 24 were each made of copper. There was a problem that the heat dissipation was poor because they were joined by the solder layer. However, in the semiconductor device of this embodiment, these members are formed integrally by overlapping and joining in advance, so that compared to the case where a solder layer is interposed between the insulating layer and the radiator plate as in the related art. As a result, heat dissipation can be improved. Further, since the insulating layer, the metal frame and the heat radiating plate are integrally laminated, compared with the case where the molding resin is poured between the metal frame and the heat radiating plate to form the insulating layer as shown in FIG. Strength can be improved.

In the semiconductor device shown in FIG. 8, the insulating layer 26 may be formed of an aluminum nitride substrate. In this case, when the members are arranged as shown in FIG. 10 and the aluminum nitride substrate is heat-treated at a high temperature (1000 ° C. or higher) in the air, alumina (Al
₂ O ₃ ) layer is formed, the insulating layer and the metal frame,
In addition, the insulating layer and the heat sink can be joined in the same manner as in the case of the copper-alumina substrate in FIG.

In the fifth embodiment, the case where the insulating layer, the metal frame and the heat radiating plate are previously formed integrally by overlapping and joining is described. However, as in the first embodiment, the insulating layer, the metal frame and the heat radiating plate are previously formed on the heat radiating plate. In the case where the heat radiating plate is joined to the metal frame after the insulating layer is formed, the same effect as in the first embodiment can be obtained.

FIG. 11 is a schematic cross-sectional view showing a cross-sectional structure of a semiconductor device according to the sixth embodiment, and shows an example in which two power elements are opposed to each other on one metal frame.

In FIG. 11, power elements 31a and 31b are mounted in a mounting area on a metal frame 32 so as to face each other.
1b and a metal wire 32 between the bonding wire 3
They are electrically connected by 3a and 33b, respectively.
Further, a heat radiating plate 34 for radiating heat of the metal frame 32 to the outside is provided on the opposite side of the power element mounting surface of the metal frame 32.

The metal frame 32 is placed on the heat sink 34.
An insulating layer 36 having a thermal conductivity of 1 W / m · k or more is formed on the surface on the side opposite to. Insulating layer 36 of this embodiment
Is made of a thermosetting resin formed on the heat radiating plate 34 by a heating lamination press.

As the thermosetting resin, for example, an insulating resin such as epoxy or polyimide containing a high thermal conductive filler such as aluminum nitride (AlN) or alumina (Al ₂ O ₃ ) can be used. Further, the entire device is integrally formed with a mold resin 35, and the surface of the heat sink 34 opposite to the surface on which the insulating layer 36 is formed is exposed from the mold resin 35.

The manufacturing process of the semiconductor device will be described with reference to FIG. First, the power element 31 is placed on the metal frame 32.
After mounting a and 31b, each power element and the metal frame 32 are connected by bonding wires 33a and 33b, respectively (FIG. 12A). Next, a radiator plate 34 in which a thermosetting resin is formed on the surface facing the metal frame 32 in advance by a heat laminating press is adhered in a fixed position to the surface of the metal frame 32 opposite to the power element mounting surface. Let it. Then, the metal frame 3 of the heat sink 34
The entire device is covered with the mold resin 35 so that the surface opposite to the surface facing 2 is exposed (FIG. 12B).

According to the semiconductor device having the above-described structure, the semiconductor device can be completed by one molding, so that the number of processing devices and dies can be reduced, and the cost can be reduced. Since there is no need to flow the molding resin between the metal frame and the heat sink, a special molding resin is not required, so that the cost of the molding resin can be reduced and the process management can be easily performed.

In particular, in the semiconductor device of this embodiment,
Since an extremely thin insulating layer, for example, about 80 μm, can be formed by the heating lamination press, the heat dissipation can be improved as compared with the case where the insulating layer is formed of a thermoplastic resin.

[0061]

As described above, according to the semiconductor device and the method of manufacturing the same according to the present invention, the number of molding steps and the number of processing devices and dies can be reduced as compared with the conventional semiconductor device. Therefore, cost reduction can be realized. In addition, since there is no need to inject molding resin between the metal frame and the heat sink, there is no need for a special molding resin with low viscosity and high thermal conductivity as in the past, which reduces the cost of molding resin. Can be suppressed. Furthermore, since a special mold resin is not used, complicated process control such as adjustment of a gap and molding conditions is not required, and process control becomes easy.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a sectional structure of a semiconductor device according to a first embodiment.

FIG. 2 is a schematic plan view of FIG.

FIGS. 3A to 3C are schematic cross-sectional views illustrating manufacturing steps of the semiconductor device according to the first embodiment.

FIG. 4 is a schematic sectional view of a heat sink according to a second embodiment.

FIG. 5 is a schematic sectional view of a heat sink according to a third embodiment.

FIG. 6 is a schematic sectional view showing a sectional structure of a semiconductor device according to a fourth embodiment;

FIGS. 7A to 7D are schematic cross-sectional views illustrating manufacturing steps of a semiconductor device according to a fourth embodiment.

FIG. 8 is a schematic sectional view showing a sectional structure of a semiconductor device according to a fifth embodiment.

FIG. 9 is a schematic plan view of FIG.

FIGS. 10A and 10B are schematic cross-sectional views illustrating a manufacturing process of a semiconductor device according to a fifth embodiment.

FIG. 11 is a schematic sectional view showing a sectional structure of a semiconductor device according to a sixth embodiment;

FIGS. 12A and 12B are schematic cross-sectional views illustrating manufacturing steps of a semiconductor device according to a sixth embodiment.

FIG. 13 is a schematic sectional view of a conventional semiconductor device.

14A to 14D are schematic cross-sectional views showing a process of forming a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Power element 12 Metal frame 13 Bonding wire 14 Heat sink 15 Mold resin 16 Insulating layer 17 Ceramic layer 18 Adhesive layer 19 Insulating sheet

Claims (11)

[Claims] 1. A metal frame having a plurality of power elements, a part for mounting the power elements, a connecting member for electrically connecting the power elements and the metal frame, and radiating heat of the metal frame to the outside. A heat sink, and a semiconductor device in which the entire device is integrally molded with a mold resin.
A semiconductor device, wherein an insulating layer having a thermal conductivity of 1 W / m · k or more is formed in advance. 2. A power supply device comprising: a plurality of power elements; a metal frame having a portion on which the power element is mounted; a connection member for electrically connecting the power element and the metal frame; A heat sink, and a semiconductor device in which the entire device is integrally molded with mold resin.
A semiconductor device, wherein an insulating layer having a thermal conductivity of 1 W / m · k or more is formed in advance. 3. The semiconductor device according to claim 1, wherein said insulating layer is a thermoplastic resin formed by injection molding. 4. The semiconductor device according to claim 1, wherein the insulating layer is an insulating member attached to the heat sink via an adhesive layer. 5. The semiconductor device according to claim 1, wherein the insulating layer is a ceramic layer. 6. The semiconductor device according to claim 1, wherein said insulating layer is an alumina substrate, and said metal frame and said heat radiating plate are copper. 7. The semiconductor device according to claim 1, wherein said insulating layer is an aluminum nitride substrate, and said metal frame and said heat radiating plate are copper. 8. The semiconductor device according to claim 6, wherein the insulating layer, the metal frame, and the heat sink are formed integrally by overlap bonding. 9. The semiconductor device according to claim 1, wherein said insulating layer is a thermosetting resin formed by a heat laminating press. 10. A metal frame having a plurality of power elements, a part for mounting the power elements, a connecting member for electrically connecting the power elements and the metal frame, and radiating heat of the metal frame to the outside. A method of manufacturing a semiconductor device, comprising: a heat sink that performs the following steps: a process of forming an insulating layer on a surface of the heat sink that is in contact with the metal frame; And a step of fixing the metal frame and a surface opposite to the power element mounting surface of the metal frame in a fixed position, and integrally molding the entire device with a mold resin. 11. A metal frame having a plurality of power elements, a part for mounting the power elements, a connection member for electrically connecting the power elements and the metal frame, and radiating heat of the metal frame to the outside. A method of manufacturing a semiconductor device, comprising: a heat radiation plate that is formed integrally with a molding resin; and a step of forming an insulating layer on a surface of the metal frame in contact with the heat radiating plate; And a step of fixing the heat sink and the heat sink in place, and integrally molding the entire device with a mold resin.