JPH10247470A - Charged particle beam processing method and device - Google Patents
Charged particle beam processing method and deviceInfo
- Publication number
- JPH10247470A JPH10247470A JP9049510A JP4951097A JPH10247470A JP H10247470 A JPH10247470 A JP H10247470A JP 9049510 A JP9049510 A JP 9049510A JP 4951097 A JP4951097 A JP 4951097A JP H10247470 A JPH10247470 A JP H10247470A
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- particle beam
- aperture
- target surface
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims description 35
- 238000003672 processing method Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000012937 correction Methods 0.000 claims abstract description 25
- 238000001514 detection method Methods 0.000 claims abstract description 23
- 238000012545 processing Methods 0.000 claims description 13
- 238000010894 electron beam technology Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 5
- 238000012546 transfer Methods 0.000 description 29
- 238000007493 shaping process Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000004069 differentiation Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子ビーム描画装
置等の荷電粒子ビームを用いる加工装置に関し、特に、
それにおける面積ビームのビーム調整方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus using a charged particle beam, such as an electron beam lithography apparatus.
The present invention relates to a method for adjusting an area beam.
【０００２】[0002]
【従来の技術】可変成形ビームを用いる電子線描画装置
では、第１成形絞り開口を透過したビームと第２成形絞
り開口との重なり合いの大きさを変化させることによっ
て様々な大きさのビームを生成している。その際、第２
成形絞り上での第１成形絞りの開口像は、上記の重なり
合いによって生成される成形ビームのコーナ角が直角と
なるように、つまり、第２成形絞り上での第１成形絞り
開口像と第２成形絞り開口の対応する各辺が互いに平行
方向となるように、その回転角を調整される必要があ
り、また、ターゲット(被描画試料)表面上での成形ビー
ム像は、その各辺が各々ｘ，ｙ両軸に対して同方向とな
るように回転角調整される必要がある。これらの回転角
調整には、現在数ミリラジアン以下の高精度が要求され
ている。2. Description of the Related Art In an electron beam lithography apparatus using a variable shaped beam, beams of various sizes are generated by changing the degree of overlap between a beam transmitted through a first shaped aperture and a second shaped aperture. doing. At that time, the second
The aperture image of the first shaping aperture on the shaping aperture is such that the corner angle of the shaping beam generated by the above-mentioned overlap becomes a right angle, that is, the first shaping aperture aperture image and the second shaping aperture image on the second shaping aperture. 2 It is necessary to adjust the rotation angle so that the corresponding sides of the shaping aperture are parallel to each other, and the shaped beam image on the surface of the target (sample to be drawn) The rotation angles need to be adjusted so that they are in the same direction with respect to both the x and y axes. For these rotation angle adjustments, high precision of several milliradians or less is currently required.
【０００３】このような第１成形絞りと第２成形絞り間
での相対的な回転角調整や第１成形絞りと第２成形絞り
によって生成される矩形成形ビームの回転角調整に際し
て、従来は、先ずテスト描画を行ない、実際にターゲッ
ト面上に形成されたレジスト像を電子顕微鏡等で観察し
て、両絞り間の相対回転角及び成形ビームの回転量を測
定して回転誤差を求めた上で、該回転誤差を回転レンズ
によって補正するか、または、成形絞りを機械的に回転
させることによって補正していた。Conventionally, when adjusting the relative rotation angle between the first forming aperture and the second forming aperture, or adjusting the rotation angle of the rectangular shaping beam generated by the first forming aperture and the second forming aperture, First, test writing is performed, and the resist image actually formed on the target surface is observed with an electron microscope or the like, and the relative rotation angle between the two stops and the amount of rotation of the forming beam are measured to determine a rotation error. The rotation error is corrected by a rotating lens or by mechanically rotating a forming aperture.
【０００４】上記手法の代表的な一例として、特公平０
７−０３２１０８号公報に示されている方法がある。こ
の方法では、最初にテスト描画を行なって各回転誤差を
求めた後、回転レンズを用いてそれぞれの回転誤差を補
正し、もって良好なショット間接続を実現しようとして
いる。As a typical example of the above method, Japanese Patent Publication No.
There is a method disclosed in JP-A-7-032108. In this method, a test drawing is first performed to determine each rotation error, and then each rotation error is corrected using a rotating lens, thereby achieving a good connection between shots.
【０００５】[0005]
【発明が解決しようとする課題】しかし、上記従来例で
は回転角補正を行なう前に必ずテスト描画を行なう必要
があり、従って、本描画前のビーム調整に多くの時間を
要していた。また、回転誤差の測定は、電子顕微鏡等に
より各描画ショット間の接続誤差を測定することにより
行なっているが、所要測定量が数十ｎｍと小さいのに対
して測定誤差が大きく、十分な補正精度を得ることがで
きないのが実状である。また、ビーム調整前のテスト描
画を省くためには、ビーム回転誤差量そのものを直接測
定する方式も考えられるが、現在のビーム校正用マーク
の構造では、数十ｎｍオーダの誤差量を精度良く測定す
ることは困難である。However, in the above-mentioned prior art, it is necessary to always perform test drawing before correcting the rotation angle, and therefore, much time is required for beam adjustment before the main drawing. The measurement of the rotation error is performed by measuring the connection error between each writing shot using an electron microscope or the like. However, while the required measurement amount is as small as several tens of nm, the measurement error is large, and sufficient correction is performed. The reality is that accuracy cannot be obtained. In order to omit the test writing before beam adjustment, a method of directly measuring the beam rotation error itself can be considered. However, with the current structure of the beam calibration mark, the error amount of the order of tens of nm is accurately measured. It is difficult to do.
【０００６】従って、本発明の目的は、上記したような
従来技術における問題点を解決し、ビームの回転誤差補
正を高速かつ高精度で行なうことの可能な面積ビームの
校正方法及びその方法を実施するのに好適な荷電粒子ビ
ーム加工装置を提供することである。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems in the prior art and to carry out an area beam calibration method and a method capable of correcting a beam rotation error at high speed and with high accuracy. It is an object of the present invention to provide a charged particle beam processing apparatus suitable for performing the above.
【０００７】[0007]
【課題を解決するための手段】ビームの回転誤差補正を
高速かつ高精度で行なうためには、ビーム回転量そのも
のの高精度測定を可能にし、かつ回転誤差補正のための
調整作業を自動化してやればよい。そこで、本発明で
は、ビーム回転量の測定を行なうために、ナイフエッジ
を用いる方法を採用している。ナイフエッジは、通常は
点ビームのビーム径の計測に用いられているが、本発明
ではこれを面積ビームの回転量測定に適用する。面積ビ
ームの回転量校正の場合には、面積ビームのビーム回転
量を複数値にわたって変化させ、各ビーム回転量の面積
ビームを試料（被加工物）表面上で走査することによっ
て、それぞれのビーム回転量の面積ビームについてのビ
ーム電流波形（各走査位置におけるビーム電流強度）を
取得し、各ビーム電流波形の２階微分処理を行なって、
得られた２次微分波形の正，負両ピーク間の値（ｐ−ｐ
値）を求め、このｐ−ｐ値が極大値となった時のビーム
回転量を最適回転量とする。なお、面積ビームの場合に
は、点ビームの場合と違いビーム形状に方向性があるた
め、ナイフエッジをＸ，Ｙ両軸方向に対してそれぞれ直
角に設けることによって、さらに高精度な補正が可能と
なる。In order to perform high-speed and high-precision beam rotation error correction, it is necessary to enable high-precision measurement of the beam rotation amount itself and to automate adjustment work for the rotation error correction. Good. Therefore, the present invention employs a method using a knife edge to measure the beam rotation amount. Although the knife edge is usually used for measuring the beam diameter of a point beam, the present invention applies this to the measurement of the rotation amount of an area beam. In the case of calibration of the rotation amount of the area beam, the beam rotation amount of the area beam is changed over a plurality of values, and the area beam of each beam rotation amount is scanned on the surface of the sample (workpiece), so that each beam rotation amount is adjusted. A beam current waveform (beam current intensity at each scanning position) for the amount of the area beam is obtained, and a second-order differentiation process of each beam current waveform is performed.
The value (pp) between the positive and negative peaks of the obtained second derivative waveform
Value), and the amount of beam rotation when this pp value reaches a maximum value is defined as the optimum amount of rotation. In addition, in the case of the area beam, since the beam shape has directionality unlike the case of the point beam, more accurate correction is possible by providing the knife edge at right angles to both the X and Y axis directions. Becomes
【０００８】[0008]
【発明の実施の形態】以下、本発明の実施の形態につ
き、図面を参照して詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【０００９】〈実施例１〉本実施例は、第１及び第２の
成形絞り（転写マスク）によって生成される成形ビーム
（面積ビーム）の回転量の校正方法についてのものであ
る。<Embodiment 1> This embodiment relates to a method for calibrating the amount of rotation of a forming beam (area beam) generated by first and second forming apertures (transfer masks).
【００１０】図１に、本実施例で使用した電子線描画装
置の概略構成を示す。電子銃１より放射された電子ビー
ムは、第１転写マスク（第１成形絞り）２及び第２転写
マスク（第２成形絞り）５を通して矩形断面形状に成形
された後、縮小レンズ６及び第１及び第２対物レンズ
７，９によってターゲット（被描画試料）２４の表面上
に縮小・投影され、ターゲット２４表面上に設けられた
レジスト膜を露光する。第１及び第２転写マスク２，５
間に設けられた転写レンズ３は、第１転写マスク２のマ
スク開口を通過した電子ビーム（第１マスク開口像）を
第２転写マスク５表面上に縮小・投影（転写）するため
のものであり、また、同じく両転写マスク２，５間に設
けられた成形偏向器４は、第１転写マスク２の開口を通
過した電子ビームを第２転写マスク５表面上で偏向し
て、上記第１マスク開口像と第２転写マスク５の開口と
の切り合い（重なり合い）状態を調節し、ターゲット２
４表面上に投影される成形ビーム像の形状・寸法を調節
するためのものである。また、第１及び第２対物レンズ
７，９間に設けられた偏向器８は、第２転写マスク５の
開口を通過した電子ビームをターゲット２４表面上で偏
向走査して、ターゲット２４表面上での成形ビーム像の
投影（転写）位置を調節するためのものである。さら
に、縮小レンズ６の上，下レンズ間には、第２転写マス
ク５を通過した電子ビーム（成形ビーム像）のターゲッ
ト２４表面上での回転状態を調整するための第２回転レ
ンズ２６が、転写レンズ３の上，下レンズ間には、第１
転写マスク２を通過した電子ビーム（第１マスク開口
像）の第２転写マスク５表面上での回転状態を調整する
ための第１回転レンズ２７が、それぞれ設けられてい
る。これらのレンズ３，６，７，９，２６，及び２７
は、それぞれレンズ電源１１，１３，１５，２２，１
４，及び３０を介して、制御コンピュータ２５により制
御されている。また、上記の偏向器４，８は、それぞれ
偏向器電源１２，１６を介して、同様に制御コンピュー
タ２５により制御されている。ターゲット２４は、Ｘ−
Ｙ２次元方向に精密移動可能なステージ１０上に載置さ
れている。ステージ１０上にはターゲット２４表面と同
一平面上にビーム検出用のナイフエッジ１８が設けられ
ている。さらに、ナイフエッジ１８からの反射，透過電
子を検出するための検出器１７，１９が設けられてお
り、これらの検出器１７，１９は検出器制御部２０，２
１を介して制御コンピュータ２５により制御されてい
る。FIG. 1 shows a schematic configuration of an electron beam lithography apparatus used in this embodiment. The electron beam emitted from the electron gun 1 is formed into a rectangular cross-sectional shape through a first transfer mask (first forming stop) 2 and a second transfer mask (second forming stop) 5, and then the reduction lens 6 and the first Then, the resist film is reduced and projected on the surface of the target (sample to be drawn) 24 by the second objective lenses 7 and 9, and the resist film provided on the surface of the target 24 is exposed. First and second transfer masks 2, 5
The transfer lens 3 provided therebetween is for reducing and projecting (transferring) the electron beam (first mask opening image) that has passed through the mask opening of the first transfer mask 2 onto the surface of the second transfer mask 5. Also, a shaping deflector 4 similarly provided between the two transfer masks 2 and 5 deflects the electron beam passing through the opening of the first transfer mask 2 on the surface of the second transfer mask 5, and The cutting (overlapping) state between the mask opening image and the opening of the second transfer mask 5 is adjusted, and the target 2
4 to adjust the shape and size of the shaped beam image projected on the surface. The deflector 8 provided between the first and second objective lenses 7 and 9 deflects and scans the electron beam passing through the opening of the second transfer mask 5 on the surface of the target 24, and scans the electron beam on the surface of the target 24. To adjust the projection (transfer) position of the shaped beam image. Further, between the upper and lower lenses of the reduction lens 6, a second rotating lens 26 for adjusting the rotation state of the electron beam (formed beam image) passing through the second transfer mask 5 on the surface of the target 24 is provided. The first between the upper and lower lenses of the transfer lens 3
First rotating lenses 27 are provided for adjusting the rotation state of the electron beam (first mask opening image) passing through the transfer mask 2 on the surface of the second transfer mask 5. These lenses 3, 6, 7, 9, 26 and 27
Are the lens power supplies 11, 13, 15, 22, 1
It is controlled by the control computer 25 via 4 and 30. The deflectors 4 and 8 are similarly controlled by a control computer 25 via deflector power supplies 12 and 16, respectively. The target 24 is X-
It is mounted on a stage 10 that can be precisely moved in the Y2-dimensional direction. On the stage 10, a knife edge 18 for beam detection is provided on the same plane as the surface of the target 24. Further, detectors 17 and 19 for detecting reflected and transmitted electrons from the knife edge 18 are provided.
1 is controlled by the control computer 25.
【００１１】図２に本実施例におけるビーム検出方法を
示す。ビームの検出は、ターゲット２４表面と同一平面
上に設置されたナイフエッジ１８上をビーム２３で走査
し、透過電子を検出器１９で検出することによって行な
う。転写マスク２，５の絞り開口を通して成形されたビ
ーム２３は、第２回転レンズ２６によってターゲット２
４上で正しい方向となるように回転調整される。FIG. 2 shows a beam detection method in the present embodiment. The beam is detected by scanning the knife edge 18 provided on the same plane as the surface of the target 24 with the beam 23 and detecting the transmitted electrons by the detector 19. The beam 23 formed through the aperture openings of the transfer masks 2 and 5 is transmitted to the target 2 by the second rotating lens 26.
4 is adjusted so as to be in the correct direction.
【００１２】ビームの回転調整は次のようにして行な
う。上記の光学系によって生成された成形（面積）ビー
ム２３を偏向器８を用いてナイフエッジ１８上で偏向走
査し、各走査点における透過電子電流を検出器１９によ
り検出し、得られたビーム電流波形を２階微分して上述
のｐ−ｐ値を求める。第２回転レンズ２６のレンズ強度
（ビーム回転量）を変化させながら上記のｐ−ｐ値測定
を複数回行なって、第２回転レンズの強度とｐ−ｐ値と
の関係を求める。この時の成形ビーム２３の回転量とビ
ーム電流波形（生波形，１次微分波形，および２次微分
波形）及びｐ−ｐ値との関係を図３に示す。The beam rotation is adjusted as follows. The shaped (area) beam 23 generated by the above optical system is deflected and scanned on the knife edge 18 using the deflector 8, the transmitted electron current at each scanning point is detected by the detector 19, and the obtained beam current The waveform is second-order differentiated to obtain the above-mentioned pp value. The above-mentioned pp value measurement is performed a plurality of times while changing the lens strength (beam rotation amount) of the second rotating lens 26, and the relationship between the intensity of the second rotating lens and the pp value is obtained. FIG. 3 shows the relationship between the amount of rotation of the shaped beam 23, the beam current waveform (raw waveform, first-order differential waveform, and second-order differential waveform) and the pp value at this time.
【００１３】上記のｐ−ｐ値は、ビーム電流波形のＸ，
Ｙ方向での立上り，立ち下がりでのボケを表わしてお
り、ｐ−ｐ値が大きい程ボケ量が少ないことになる。同
様に、ビームが回転している時にも、一方向（Ｘまたは
Ｙ方向）からの観察ではビームエッジがだれて見えるた
め、ビームがボケているのと同様の効果が観察される。
すなわち、ナイフエッジ２６の方向とビームエッジの方
向とが同一方向の時に、２階微分波形上でのｐ−ｐ値が
極大値となる。従って、この点を利用することによっ
て、成形（面積）ビームの回転調整を行なうことができ
る。[0013] The above pp value is determined by X,
This represents blur at the rise and fall in the Y direction. The larger the pp value, the smaller the blur amount. Similarly, even when the beam is rotating, the beam edge appears to be blurred when viewed from one direction (X or Y direction), so that the same effect as when the beam is blurred is observed.
That is, when the direction of the knife edge 26 and the direction of the beam edge are in the same direction, the peak-to-peak value on the second-order differential waveform becomes a maximum value. Therefore, by utilizing this point, the rotation of the shaped (area) beam can be adjusted.
【００１４】第２回転レンズ２６のレンズ強度を変化さ
せながらそれぞれのレンズ強度値におけるｐ−ｐ値を求
める。そして、レンズ強度値とｐ−ｐ値との関係をプロ
ットすると、図４の様になる。この関係を２次式で近似
し、ｐ−ｐ値が極大値となる点から最適レンズ強度値を
求める。Ｘ方向測定による最適レンズ強度値とＹ方向測
定による最適レンズ強度値とは理論上は等しくなるが、
測定精度その他の理由で異なる場合もあり、両者の平均
を採ることによってさらに高精度な補正が可能となる。While changing the lens strength of the second rotating lens 26, the pp value at each lens strength value is determined. FIG. 4 shows a plot of the relationship between the lens intensity value and the pp value. This relationship is approximated by a quadratic equation, and the optimum lens intensity value is obtained from the point where the pp value becomes a maximum value. Although the optimal lens intensity value measured in the X direction and the optimal lens intensity value measured in the Y direction are theoretically equal,
The measurement accuracy may be different due to other reasons. By taking the average of the two, more accurate correction can be performed.
【００１５】上記した最適レンズ強度値決定方式を用い
て矩形成形ビームの回転量の補正を行なった。補正対象
としての矩形成形ビームは５μｍ角の正方形であり、図
２に示したナイフエッジ１８を用いてビーム回転量の測
定を行なった。第２回転レンズ２６のレンズ強度値を変
化させて ±２０ ｍ ｒａｄ の範囲内で等間隔に１１点
のビーム回転量の場合について、ビーム電流の２次微分
波形のｐ−ｐ値を測定し、レンズ強度値（ビーム回転
量）とｐ−ｐ値との関係を２次式で近似することによっ
て、ｐ−ｐ値の極大点から最適レンズ強度値を求めた。
そして、第２回転レンズ２６のレンズ強度値を上記で求
めた最適レンズ強度値に固定設定することにより、ビー
ム回転量の補正を完了した。The amount of rotation of the rectangular shaping beam was corrected using the above-described optimum lens intensity value determination method. The rectangular shaped beam to be corrected is a square of 5 μm square, and the beam rotation amount was measured using the knife edge 18 shown in FIG. By changing the lens strength value of the second rotating lens 26 and measuring the pp value of the second derivative waveform of the beam current for 11 beam rotation amounts at equal intervals within the range of ± 20 mrad, By approximating the relationship between the lens intensity value (the amount of beam rotation) and the peak-to-peak value by a quadratic equation, the optimum lens intensity value was determined from the maximum point of the peak-to-peak value.
Then, the correction of the beam rotation amount was completed by fixing the lens intensity value of the second rotating lens 26 to the optimum lens intensity value obtained above.
【００１６】上記のビーム回転量補正の結果、５μｍ角
の矩形成形ビームを１ ｍ ｒａｄの精度で回転調整でき
た。なお、ビーム回転量の指標としてビーム電流の２次
微分波形上でのピークトゥピーク（ｐ−ｐ）値を用いた
がゼロトゥピーク（０−ｐ）値を用いてもよく、あるい
はまた、ビーム電流の１次微分波形や生波形を用いても
波形処理の方法を変えることにより同様の補正が可能で
ある。また、本実施例ではナイフエッジからの透過電子
を検出器１９によって検出したが、反射電子を検出器１
７を用いて検出することによっても同様の補正が可能で
ある。As a result of the correction of the beam rotation amount, the rotation of a rectangular shaped beam of 5 μm square could be adjusted with an accuracy of 1 mrad. Although the peak-to-peak (pp) value on the second derivative waveform of the beam current is used as an index of the beam rotation amount, a zero-to-peak (0-p) value may be used. The same correction can be made by using a first-order differential waveform or a raw waveform of the current by changing the waveform processing method. In the present embodiment, the transmitted electrons from the knife edge are detected by the detector 19, but the reflected electrons are detected by the detector 1.
The same correction can be made by performing detection using.
【００１７】〈実施例２〉上記実施例１においては、第
２転写マスク５を通過した成形電子ビームの回転補正を
行なったが、本実施例では、第１転写マスク２の絞り開
口を通過した電子ビームによって第２転写マスク５上に
形成される第１絞り開口像と第２転写マスク５の絞り開
口（第２絞り開口）との相対回転量の調整を行なってい
る。図５に示す如く、可変ビーム成形法では、第１と第
２の絞り開口によって矩形ビームを生成しているが、第
１，第２の絞り開口の端縁で規定されるビームエッジ２
８，２９を用いて矩形ビーム２３を生成しているため、
両絞り開口間の相対回転量が最適値よりずれていると、
矩形成形ビームが楔状になってしまって適切な描画を行
なうことができない。この相対回転量の調整には、機械
的にマスクを回転させる方法や回転レンズを用いる方法
があるが、上記の成形ビームの回転調整の場合同様に
数 ｍ ｒａｄ の調整精度が要求される。本実施例で
は、第１転写マスク２によって形成される第１絞り開口
像と第２転写マスク５によって形成される第２絞り開口
像との間の相対回転量を自動的に測定して、最適な相対
回転量となるように、自動的に第１絞り開口像の回転量
を補正する。<Embodiment 2> In the first embodiment, the rotation of the shaped electron beam passing through the second transfer mask 5 was corrected. In the present embodiment, the beam was passed through the aperture of the first transfer mask 2. The relative rotation amount between the first aperture opening image formed on the second transfer mask 5 by the electron beam and the aperture opening (second aperture opening) of the second transfer mask 5 is adjusted. As shown in FIG. 5, in the variable beam shaping method, a rectangular beam is generated by the first and second aperture openings, but the beam edge 2 defined by the edges of the first and second aperture openings.
Since the rectangular beam 23 is generated using 8, 29,
If the relative rotation between the two apertures deviates from the optimal value,
The rectangular shaped beam becomes wedge-shaped, so that it is impossible to perform appropriate drawing. In order to adjust the relative rotation amount, there are a method of mechanically rotating the mask and a method of using a rotating lens.
An adjustment accuracy of several mrad is required. In the present embodiment, the relative rotation amount between the first aperture opening image formed by the first transfer mask 2 and the second aperture opening image formed by the second transfer mask 5 is automatically measured to optimize The rotation amount of the first aperture opening image is automatically corrected so that the relative rotation amount becomes appropriate.
【００１８】この場合のビームの回転調整は、次のよう
にして行なう。ビームの検出方法は実施例１の場合と同
様である。上記した光学系によって成形された電子ビー
ムをナイフエッジ１８上で走査し、各走査点における透
過電子電流を検出器１９にて検出する。そして、検出ビ
ーム電流波形を２階微分してそのｐ−ｐ値を求める。第
１回転レンズ２７のレンズ強度を変化させながら上記の
走査を複数回行ない、レンズ強度値とｐ−ｐ値との関係
を求める。この時の成形ビーム２３の回転量とビーム電
流波形（生波形，１次微分波形，並びに２次微分波形）
及びｐ−ｐ値との関係を図５に示す。The rotation of the beam in this case is adjusted as follows. The beam detection method is the same as in the first embodiment. The electron beam formed by the optical system described above is scanned on the knife edge 18, and the transmitted electron current at each scanning point is detected by the detector 19. Then, the detected beam current waveform is second-order differentiated to obtain its pp value. The above scanning is performed a plurality of times while changing the lens strength of the first rotating lens 27, and the relationship between the lens strength value and the pp value is obtained. At this time, the amount of rotation of the shaped beam 23 and the beam current waveform (raw waveform, first derivative waveform, and second derivative waveform)
FIG. 5 shows the relationship between the peak value and the pp value.
【００１９】第１の実施例では、第２回転レンズ２６の
レンズ強度の変化によるビーム回転量の変化につれて、
ビーム電流波形を２階微分して得られる２次微分波形の
正側および負側のピーク値が共に変化したが、本実施例
では、第１回転レンズ２７のレンズ強度を変化させて第
１絞り開口像の回転量のみを変化させているため、成形
ビーム２３の第１絞り開口により規定されるビームエッ
ジ２８のみが回転し、第２絞り開口により規定されるビ
ームエッジ２９は回転しないため、ビーム回転量の変化
につれて、ビーム電流波形を２階微分して得られる２次
微分波形上での正側のピーク値は変化するが、負側のピ
ーク値は変化しない。In the first embodiment, as the beam rotation amount changes due to the change in the lens strength of the second rotation lens 26,
Although the positive and negative peak values of the second-order differential waveform obtained by performing the second-order differentiation of the beam current waveform both changed, in the present embodiment, the first diaphragm 27 was changed by changing the lens strength of the first rotating lens 27. Since only the amount of rotation of the aperture image is changed, only the beam edge 28 defined by the first aperture of the shaped beam 23 rotates, and the beam edge 29 defined by the second aperture does not rotate. As the rotation amount changes, the peak value on the positive side on the second derivative waveform obtained by second-order differentiation of the beam current waveform changes, but the peak value on the negative side does not change.
【００２０】第１回転レンズ２７のレンズ強度を変化さ
せながら、それぞれのレンズ強度値におけるｐ−ｐ値を
求める。そして、求めたｐ−ｐ値とレンズ強度値との関
係をプロットすると、実施例１の場合と同様に図４の様
な関係曲線が得られる。この関係曲線を２次式で近似
し、ｐ−ｐ値が極大値となる点から最適レンズ強度値を
求める。Ｘ軸方向測定での最適レンズ強度値とＹ軸方向
測定での最適レンズ強度値とは理論上は等しくなるが、
測定精度その他の理由により異なる場合もある。そこ
で、両者の平均値を採ることによって、さらに高精度な
補正が可能となる。While changing the lens strength of the first rotating lens 27, the pp value at each lens strength value is determined. Then, when the relationship between the obtained pp value and the lens intensity value is plotted, a relationship curve as shown in FIG. 4 is obtained as in the case of the first embodiment. This relationship curve is approximated by a quadratic equation, and the optimum lens intensity value is determined from the point where the peak-to-peak value becomes a maximum value. Although the optimal lens intensity value in the X-axis direction measurement and the optimal lens intensity value in the Y-axis direction measurement are theoretically equal,
It may vary due to measurement accuracy and other reasons. Therefore, by taking the average value of both, more accurate correction can be performed.
【００２１】上記した最適レンズ強度値決定方式を用い
て第１絞り開口像の回転量の補正を行なった。補正対象
としての成形ビームは５μｍ角の正方形ビームであり、
図２に示したナイフエッジ１８を用いて第１絞り開口像
の回転量の測定を行なった。第１回転レンズ２７のレン
ズ強度値を変化させて ±２０ ｍ ｒａｄ の範囲内で等
間隔に１１点のビーム回転量の場合について、ビーム電
流波形の２次微分波形からｐ−ｐ値を測定し、得られた
レンズ強度値（ビーム回転量）とｐ−ｐ値との関係曲線
を２次式で近似し、この２次近似式上でｐ−ｐ値が極大
値となる点から第１回転レンズ２７の最適レンズ強度値
を求めた。そして、第１回転レンズ２７のレンズ強度値
を上記で求めた最適レンズ強度値に固定設定して、第１
絞り開口像の回転量の補正を完了した。The rotation amount of the first aperture opening image was corrected using the above-described optimum lens intensity value determination method. The shaped beam to be corrected is a 5 μm square beam,
The rotation amount of the first aperture opening image was measured using the knife edge 18 shown in FIG. By changing the lens intensity value of the first rotating lens 27, the pp value was measured from the second derivative waveform of the beam current waveform for 11 beam rotation amounts at equal intervals within the range of ± 20 mrad. The relation curve between the obtained lens intensity value (beam rotation amount) and the peak-to-peak value is approximated by a quadratic expression, and the first rotation is performed from the point where the peak-to-peak value becomes maximum on this quadratic approximation expression. The optimum lens intensity value of the lens 27 was determined. Then, the lens strength value of the first rotating lens 27 is fixedly set to the optimum lens strength value obtained above, and the first
The correction of the rotation amount of the aperture opening image has been completed.
【００２２】上記した第１回転レンズ２７による第１絞
り開口像の相対回転量補正の結果、５μｍ角の矩形成形
ビームを １ ｍ ｒａｄ の精度で、迅速に回転調整する
ことができた。なお、ここではビーム回転量の指標とし
てビーム電流波形の２次微分波形上でのピークトゥピー
ク（ｐ−ｐ）値を用いたが、代わりにゼロトゥピーク
（０−ｐ）値を用いてもよく、あるいはまたビーム電流
の１次微分波形や生波形を用いても、波形処理の方法を
変えることで、同様の補正が可能である。また、本実施
例では、ナイフエッジからの透過電子を検出器１９によ
って検出したが、反射電子を検出器１７を用いて検出し
ても同様の補正が可能である。As a result of the correction of the relative rotation amount of the first aperture opening image by the first rotating lens 27, a rectangular shaped beam of 5 μm square can be quickly rotated and adjusted with an accuracy of 1 mrad. Here, the peak-to-peak (pp) value on the second derivative waveform of the beam current waveform is used as an index of the beam rotation amount, but a zero-to-peak (0-p) value may be used instead. The same correction can be made by changing the waveform processing method, or by using the first derivative waveform or the raw waveform of the beam current. Further, in the present embodiment, the transmitted electrons from the knife edge are detected by the detector 19, but the same correction can be made by detecting the reflected electrons using the detector 17.
【００２３】〈実施例３〉先の実施例１，２では、ビー
ム回転量の最適値をナイフエッジ１８上でビームを走査
することにより求めたが、本実施例では、これら実施例
１，２とは異なるビーム回転量検出方式及び最適レンズ
強度値決定方式を用いて、第１絞り開口と第２絞り開口
とによって形成される成形ビーム像の回転量の補正を行
なう場合について示す。<Embodiment 3> In the first and second embodiments, the optimum value of the beam rotation amount was obtained by scanning the beam on the knife edge 18. In the third embodiment, the optimum value of the beam rotation amount is obtained. A case will be described in which the amount of rotation of the shaped beam image formed by the first and second apertures is corrected using a beam rotation amount detection method and an optimum lens intensity value determination method different from those described above.
【００２４】図６に、本実施例で用いるビーム検出方法
について示す。また、ビーム回転量の補正は、次のよう
にして行なわれる。先ず、ビームの検出は、ターゲット
面上に設置されたナイフエッジを成形ビーム２３で走査
して、透過電子を検出器１９を用いて検出することによ
り行なう。本実施例でのビーム検出には、図６に示すよ
うな２種類のナイフエッジ１８−１，１８−２を用い
る。１回目の走査の際には、図６の(ａ)に示す如く、ビ
ーム２３の上方部分のみがナイフエッジ１８−１当た
り、２回目の走査の際には、図６の(ｂ)に示す如く、ビ
ーム２３の下方部分のみがナイフエッジ１８−２に当た
るようにする。このような方法で検出されるビーム電流
波形を１階微分することによって、図７に示すような、
１次微分波形３１，３２がそれぞれ得られる。ここで、
ビーム２３が回転している場合には、両波形３１，３２
のピーク位置間にずれが生じ、回転していない（ビーム
方向がナイフエッジの方向に一致している）場合には、
両波形３１，３２のピーク位置は互いに合致する。な
お、本実施例の場合、１回目と２回目のビーム走査開始
点からそれぞれ対応するナイフエッジまでの距離ｄが互
いに等しくなるように予め設定してある。例えば、両ナ
イフエッジのエッジ端がビーム走査方向に対して直角な
一直線上に配置されている場合には、ビーム走査開始点
は該エッジ端と平行な一直線上に設定される。FIG. 6 shows a beam detection method used in this embodiment. The correction of the beam rotation amount is performed as follows. First, the beam is detected by scanning the knife edge provided on the target surface with the shaped beam 23 and detecting the transmitted electrons using the detector 19. In this embodiment, two types of knife edges 18-1 and 18-2 as shown in FIG. 6 are used for beam detection. In the first scan, as shown in FIG. 6A, only the upper portion of the beam 23 hits the knife edge 18-1, and in the second scan, it is shown in FIG. As such, only the lower portion of the beam 23 strikes the knife edge 18-2. By performing first-order differentiation of the beam current waveform detected by such a method, as shown in FIG.
Primary differential waveforms 31 and 32 are obtained, respectively. here,
When the beam 23 is rotating, both waveforms 31, 32
If there is a shift between the peak positions and the beam is not rotating (the beam direction matches the direction of the knife edge),
The peak positions of both waveforms 31 and 32 match each other. In the present embodiment, the distances d from the first and second beam scanning start points to the corresponding knife edges are set in advance so as to be equal to each other. For example, when the edge ends of both knife edges are arranged on a straight line perpendicular to the beam scanning direction, the beam scanning start point is set on a straight line parallel to the edge ends.
【００２５】上記したビーム回転量測定方式を用いて矩
形成形ビーム２３の回転量の補正を行なった。補正対象
としての矩形成形ビームは５μｍ角の正方形ビームであ
り、図６に示したナイフエッジ１８−１，１８−２を用
いて、ビーム２３の回転量の測定を行なった。両ナイフ
エッジ１８−１，１８−２とビーム２３とのオーバーラ
ップ量は、ビームの上方部分，下方部分共に、それぞれ
上，下端から１μｍとした。第２回転レンズ２６のレン
ズ強度値を変化させて、 ±２０ ｍ ｒａｄ の範囲内で
等間隔に１１点のビーム回転量の場合について、検出ビ
ーム電流波形を１階微分することにとって得られる１次
微分波形３１，３２間のずれ量（ピーク間距離）３３を
測定し、このずれ量と第２回転レンズのレンズ強度値と
の関係を求め、さらに、この関係を２次式で近似し、該
近似式上でずれ量が最少となる点から第２回転レンズ２
６の最適レンズ強度値を求めた。そして、第２回転レン
ズ２６のレンズ強度値を上記で求めた最適レンズ強度値
に固定設定してビーム回転量の補正を完了した。The rotation amount of the rectangular shaped beam 23 was corrected using the above-described beam rotation amount measurement method. The rectangular shaped beam to be corrected is a square beam of 5 μm square, and the rotation amount of the beam 23 was measured using the knife edges 18-1 and 18-2 shown in FIG. The amount of overlap between the knife edges 18-1 and 18-2 and the beam 23 was 1 μm from the upper and lower ends of both the upper and lower portions of the beam. By changing the lens strength value of the second rotating lens 26, the first order differentiation obtained by first-order differentiation of the detected beam current waveform for the case of eleven beam rotations at equal intervals within the range of ± 20 mrad. The shift amount (distance between peaks) 33 between the differential waveforms 31 and 32 is measured, the relationship between the shift amount and the lens strength value of the second rotating lens is obtained, and this relationship is approximated by a quadratic expression. From the point where the amount of displacement is minimized on the approximate expression, the second rotating lens 2
The optimal lens strength value of 6 was determined. Then, the correction of the beam rotation amount was completed by fixing the lens intensity value of the second rotating lens 26 to the optimum lens intensity value obtained above.
【００２６】上記した第２回転レンズ２６による矩形成
形ビームの回転量補正の結果、成形ビームを １ ｍ ｒ
ａｄ の精度で回転調整できた。なお、ビーム回転量の
測定に際しては、成形ビームの上方部分，下方部分のナ
イフエッジとのオーバーラップ量が互いに等しくなるよ
うにすることが望ましいが、違っていても補正は可能で
ある。また、本実施例では、ビーム回転量の指標として
両ビーム電流波形の１次微分波形上でのピーク間距離を
用いたが、両ビーム電流波形の合致度等を指標としたそ
の他のビーム回転量測定方法を用いても同様の補正が可
能である。また、本実施例ではナイフエッジからの透過
電子を検出器１９により検出したが、反射電子を検出す
ることによっても同様の補正が可能である。さらに、ビ
ーム検出用のマークとして、上記したナイフエッジに代
えて、軽元素基板上に設けた重金属マーク等の他の適宜
なマークを用いても同様の補正が可能である。As a result of the above-described correction of the amount of rotation of the rectangular shaped beam by the second rotating lens 26, the shaped beam is reduced by 1 mr.
The rotation could be adjusted with the accuracy of ad. When measuring the beam rotation amount, it is desirable that the upper and lower portions of the shaped beam overlap with the knife edge so as to be equal to each other, but correction can be made even if they are different. Further, in the present embodiment, the distance between peaks on the first derivative waveform of both beam current waveforms is used as an index of the beam rotation amount. The same correction can be made by using the measuring method. In the present embodiment, the transmitted electrons from the knife edge are detected by the detector 19, but the same correction can be made by detecting the reflected electrons. Further, similar correction can be performed by using another appropriate mark such as a heavy metal mark provided on a light element substrate instead of the knife edge as the beam detection mark.
【００２７】[0027]
【発明の効果】以上詳述したように、本発明によれば、
可変成形ビーム法によって形成される任意形状の面積ビ
ームの高速かつ高精度での回転調整（回転誤差補正）を
行なうことができる。As described in detail above, according to the present invention,
High-speed and high-accuracy rotation adjustment (rotation error correction) of an area beam having an arbitrary shape formed by the variable shaped beam method can be performed.
【図１】本発明の一実施例になる電子線描画装置の概略
構成図。FIG. 1 is a schematic configuration diagram of an electron beam writing apparatus according to an embodiment of the present invention.
【図２】本発明の実施例１〜２におけるビーム検出方式
の説明図。FIG. 2 is an explanatory diagram of a beam detection system in Embodiments 1 and 2 of the present invention.
【図３】本発明の実施例１におけるビーム回転量測定方
法の説明図。FIG. 3 is an explanatory diagram of a beam rotation amount measuring method according to the first embodiment of the present invention.
【図４】本発明の実施例１におけるビーム回転量測定方
法を説明するためのレンズ強度値とｐ−ｐ値との関係を
示す図。FIG. 4 is a diagram illustrating a relationship between a lens intensity value and a peak-to-peak value for explaining a beam rotation amount measuring method according to the first embodiment of the present invention.
【図５】本発明の実施例２におけるビーム回転量測定方
法の説明図。FIG. 5 is an explanatory diagram of a beam rotation amount measuring method according to a second embodiment of the present invention.
【図６】本発明の実施例３におけるビーム検出方式の説
明図。FIG. 6 is an explanatory diagram of a beam detection method according to a third embodiment of the present invention.
【図７】本発明の実施例３におけるビーム回転量測定方
法の説明図。FIG. 7 is an explanatory diagram of a beam rotation amount measuring method according to a third embodiment of the present invention.
１：電子銃， ２：第１転写マスク， ３：転写レンズ， ４：成形偏向器， ５：第２転写マスク， ６：縮小レンズ， ７：第１対物レンズ， ８：偏向器， ９：第２対物レンズ， １０：ステージ， １１，１３〜１５，２２，３０：レンズ電源， １２，１６：偏向器電源， １７：反射電子検出器， １８，１８−１，１８−２：ナイフエッジ， １９：透過電子検出器， ２０，２１：検出器制御部， ２３：成形電子ビーム， ２４：ターゲット， ２５：制御コンピュータ， ２６：第２回転レンズ， ２７：第１回転レンズ， ２８：第１転写マスク２によるビームエッジ， ２９：第２転写マスク５によるビームエッジ， ３１：１回目の走査による検出ビーム電流の１次微分波
形， ３２：２回目の走査による検出ビーム電流の１次微分波
形， ３３：ピーク間距離。1: electron gun, 2: first transfer mask, 3: transfer lens, 4: shaped deflector, 5: second transfer mask, 6: reduction lens, 7: first objective lens, 8: deflector, 9: first 2 objective lens, 10: stage, 11, 13 to 15, 22, 30: lens power supply, 12, 16: deflector power supply, 17: backscattered electron detector, 18, 18-1, 18-2: knife edge, 19 : Transmission electron detector, 20, 21: detector control unit, 23: shaped electron beam, 24: target, 25: control computer, 26: second rotating lens, 27: first rotating lens, 28: first transfer mask 29: Beam edge by the second transfer mask 5, 31: Primary differential waveform of the detected beam current by the first scan, 32: Primary differential waveform of the detected beam current by the second scan, 33: Distance between peaks.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 村井 二三夫 東京都国分寺市東恋ケ窪一丁目280番地 株式会社日立製作所中央研究所内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Fumio Murai 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd.
Claims (12)
開口を順次通過させることによって所定断面形状に成形
された面積ビームをターゲット表面上に投射することに
より該ターゲット表面の加工を行なう荷電粒子ビーム加
工方法において、上記第１の絞り開口を通過した荷電粒
子ビームと上記第２の絞り開口との間の相対的な回転量
を検出して、該検出結果に基づいて、上記第１の絞り開
口を通過した荷電粒子ビームと上記第２の絞り開口との
間の相対的な回転量を最適値に補正する段階を含んでな
ることを特徴とする荷電粒子ビーム加工方法。1. A target particle surface is processed by projecting an area beam formed into a predetermined cross-sectional shape by passing a charged particle beam through first and second aperture openings on the target surface. In the charged particle beam processing method, a relative rotation amount between the charged particle beam that has passed through the first aperture and the second aperture is detected, and the first rotation is detected based on the detection result. Correcting the relative amount of rotation between the charged particle beam passing through the second aperture and the second aperture to an optimum value.
ームと上記第２の絞り開口との間の相対的な回転量の検
出は、上記ターゲット表面と同一平面上に設けられたナ
イフエッジに対して上記成形面積ビームを偏向走査しな
がら、該ナイフエッジから透過または反射する荷電粒子
を検出して、その検出信号波形を演算処理することによ
って行なわれることを特徴とする請求項１に記載の荷電
粒子ビーム加工方法。2. The method according to claim 1, wherein the relative rotation between the charged particle beam passing through the first aperture and the second aperture is detected by a knife edge provided on the same plane as the target surface. 2. The method according to claim 1, wherein the scanning is performed by detecting charged particles transmitted or reflected from the knife edge while deflecting and scanning the shaped area beam, and processing the detected signal waveform. Charged particle beam processing method.
のエッジ部を有するナイフエッジを用いて、これら２以
上の方向のエッジ部に対してそれぞれ上記成形面積ビー
ムを偏向走査して、それぞれの偏向走査方向での検出信
号波形を演算処理することにより、上記第１の絞り開口
を通過した荷電粒子ビームと上記第２の絞り開口との間
の相対的な回転量を検出することを特徴とする請求項２
に記載の荷電粒子ビーム加工方法。3. A knife edge having edges in two or more directions is used as the knife edge, and the shaped area beam is deflected and scanned with respect to the edges in two or more directions. A relative rotation amount between the charged particle beam passing through the first aperture and the second aperture is detected by arithmetically processing a detection signal waveform in the deflection scanning direction. Claim 2
3. The charged particle beam processing method according to 1.
ームと上記第２の絞り開口との間の相対的な回転量の検
出は、上記検出信号波形の２階微分波形を求めて、該２
階微分波形を演算処理することにより行なわれることを
特徴とする請求項２または請求項３に記載の荷電粒子ビ
ーム加工方法。4. A method for detecting a relative amount of rotation between the charged particle beam passing through the first aperture and the second aperture, comprising: obtaining a second-order differential waveform of the detection signal waveform; Said 2
The charged particle beam processing method according to claim 2, wherein the method is performed by performing arithmetic processing on a second-order differential waveform.
ームと上記第２の絞り開口との間の相対的な回転量の補
正は、上記ナイフエッジに対して上記成形面積ビームを
複数回にわたって偏向走査し、これら複数回の偏向走査
のそれぞれにおいて得られる上記検出信号波形を演算処
理して得めた上記第１の絞り開口を通過した荷電粒子ビ
ームと上記第２の絞り開口との間の相対回転量値を比較
して、最適な相対回転量値を求め、該最適相対回転量値
になるように、上記第１の絞り開口を通過した荷電粒子
ビームと上記第２の絞り開口との間の相対的な回転量を
調節することによって行なわれることを特徴とする請求
項２から請求項４までのいずれかに記載の荷電粒子ビー
ム加工方法。5. The correction of the relative rotation between the charged particle beam passing through the first aperture and the second aperture is performed by applying the shaped area beam to the knife edge a plurality of times. Between the charged particle beam passing through the first aperture and the second aperture obtained by arithmetically processing the detection signal waveform obtained in each of the plurality of deflection scans. Are compared to obtain an optimum relative rotation amount value, and the charged particle beam passing through the first stop opening and the second stop opening are determined so as to have the optimum relative rotation amount value. The charged particle beam processing method according to any one of claims 2 to 4, wherein the method is performed by adjusting a relative rotation amount between (i) and (ii).
開口を順次通過させることによって所定断面形状に成形
された面積ビームをターゲット表面上に投射することに
より該ターゲット表面の加工を行なう荷電粒子ビーム加
工方法において、上記ターゲット表面上に投射される成
形面積ビームの上記ターゲット表面に対する相対的な回
転量を検出し、該検出結果に基づいて、上記成形面積ビ
ームの上記ターゲット表面に対する相対的な回転量を最
適値に補正する段階を含んでなることを特徴とする荷電
粒子ビーム加工方法。6. The target surface is processed by projecting an area beam formed in a predetermined cross-sectional shape by passing a charged particle beam through the first and second aperture openings sequentially on the target surface. In the charged particle beam processing method, a relative rotation amount of the shaped area beam projected on the target surface with respect to the target surface is detected, and based on the detection result, a relative rotation of the shaped area beam with respect to the target surface is detected. A charged particle beam processing method, comprising a step of correcting a rotation amount to an optimum value.
面積ビームの上記ターゲット表面に対する相対的な回転
量の検出は、上記ターゲット表面と同一平面上に設けら
れたナイフエッジに対して上記成形面積ビームを偏向走
査しながら、該ナイフエッジから透過または反射する荷
電粒子を検出して、その検出信号波形を演算処理するこ
とによって行なわれることを特徴とする請求項６に記載
の荷電粒子ビーム加工方法。7. The detection of the amount of rotation of the shaped area beam projected on the target surface relative to the target surface is performed by detecting the amount of rotation of the shaped area beam with respect to the knife edge provided on the same plane as the target surface. 7. The charged particle beam processing method according to claim 6, wherein the method is performed by detecting charged particles transmitted or reflected from the knife edge while deflecting and scanning the beam, and performing arithmetic processing on the detected signal waveform. .
のエッジ部を有するナイフエッジを用いて、これら２以
上の方向のエッジ部に対してそれぞれ上記成形面積ビー
ムを偏向走査して、それぞれの偏向走査方向での検出信
号波形を演算処理することにより、上記ターゲット表面
上に投射される成形面積ビームの上記ターゲット表面に
対する相対的な回転量を検出することを特徴とする請求
項７に記載の荷電粒子ビーム加工方法。8. A knife edge having edges in two or more directions is used as the knife edge, and the shaped area beam is deflected and scanned with respect to the edges in two or more directions. 8. The method according to claim 7, wherein the amount of rotation of the shaped area beam projected on the target surface relative to the target surface is detected by performing arithmetic processing on the detection signal waveform in the deflection scanning direction. Charged particle beam processing method.
面積ビームの上記ターゲット表面に対する相対的な回転
量の検出は、上記検出信号波形の２階微分波形を求め
て、該２階微分波形を演算処理することによって行なわ
れることを特徴とする請求項７または請求項８に記載の
荷電粒子ビーム加工方法。9. The detection of the amount of rotation of the shaped area beam projected on the target surface relative to the target surface is performed by obtaining a second-order differential waveform of the detection signal waveform and calculating the second-order differential waveform. The charged particle beam processing method according to claim 7, wherein the method is performed by performing an arithmetic process.
面に対する相対的な回転量の補正は、上記ナイフエッジ
に対して上記成形面積ビームを複数回にわたって偏向走
査し、これら複数回の偏向走査のそれぞれにおいて得ら
れる上記検出信号波形を演算処理して得めた上記成形面
積ビームの上記ターゲット表面に対する相対回転量値を
比較して、最適な相対回転量値を求め、該最適相対回転
量値になるように、上記成形面積ビームの上記ターゲッ
ト表面に対する相対的な回転量を調節することによって
行なわれることを特徴とする請求項７から請求項９まで
のいずれかに記載の荷電粒子ビーム加工方法。10. The correction of the amount of rotation of the shaped area beam relative to the target surface is performed by deflecting the shaped area beam multiple times with respect to the knife edge, and in each of the plurality of times of deflection scanning. By comparing the relative rotation value of the shaped area beam obtained by performing arithmetic processing on the obtained detection signal waveform with respect to the target surface, an optimum relative rotation value is obtained, and the optimum relative rotation value is obtained. 10. The charged particle beam processing method according to claim 7, wherein the method is performed by adjusting an amount of rotation of the shaped area beam relative to the target surface.
り開口を順次通過させることによって所定断面形状に成
形された面積ビームをターゲット表面上に投射すること
により該ターゲット表面の加工を行なう荷電粒子ビーム
加工装置において、上記第１の絞り開口を通過した荷電
粒子ビームと上記第２の絞り開口との間の相対的な回転
量を検出して、該検出結果に基づいて、上記第１の絞り
開口を通過した荷電粒子ビームと上記第２の絞り開口と
の間の相対的な回転量を最適値に補正する手段をさらに
含んでなることを特徴とする荷電粒子ビーム加工装置。11. The target surface is processed by projecting an area beam formed into a predetermined cross-sectional shape on the target surface by passing the charged particle beam through the first and second aperture openings sequentially. In the charged particle beam processing apparatus, a relative amount of rotation between the charged particle beam passing through the first aperture and the second aperture is detected, and the first rotation is detected based on the detection result. A charged particle beam processing apparatus, further comprising: means for correcting a relative rotation amount between the charged particle beam passing through the second aperture and the second aperture to an optimum value.
り開口を順次通過させることによって所定断面形状に成
形された面積ビームをターゲット表面上に投射すること
により該ターゲット表面の加工を行なう荷電粒子ビーム
加工装置において、上記ターゲット表面上に投射される
上記成形面積ビームの上記ターゲット表面に対する相対
的な回転量を検出し、該検出結果に基づいて、上記成形
面積ビームの上記ターゲット表面に対する相対的な回転
量を最適値に補正する手段をさらに含んでなることを特
徴とする荷電粒子ビーム加工装置。12. A target surface is processed by projecting an area beam formed into a predetermined cross-sectional shape on a target surface by passing a charged particle beam through the first and second aperture openings sequentially. In the charged particle beam processing apparatus, the amount of rotation of the shaped area beam projected on the target surface relative to the target surface is detected, and based on the detection result, the relative rotation of the shaped area beam with respect to the target surface is detected. A charged particle beam processing apparatus, further comprising means for correcting a specific rotation amount to an optimum value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09049510A JP3102632B2 (en) | 1997-03-05 | 1997-03-05 | Charged particle beam processing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09049510A JP3102632B2 (en) | 1997-03-05 | 1997-03-05 | Charged particle beam processing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10247470A true JPH10247470A (en) | 1998-09-14 |
| JP3102632B2 JP3102632B2 (en) | 2000-10-23 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2404782A (en) * | 2003-08-01 | 2005-02-09 | Leica Microsys Lithography Ltd | Pattern-writing equipment with lens sets |
| JP2006024624A (en) * | 2004-07-06 | 2006-01-26 | Toshiba Corp | Charged beam drawing apparatus and aperture adjusting method |
-
1997
- 1997-03-05 JP JP09049510A patent/JP3102632B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2404782A (en) * | 2003-08-01 | 2005-02-09 | Leica Microsys Lithography Ltd | Pattern-writing equipment with lens sets |
| GB2404782B (en) * | 2003-08-01 | 2005-12-07 | Leica Microsys Lithography Ltd | Pattern-writing equipment |
| JP2006024624A (en) * | 2004-07-06 | 2006-01-26 | Toshiba Corp | Charged beam drawing apparatus and aperture adjusting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3102632B2 (en) | 2000-10-23 |
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