JPH1154408A - Method for deciding correction parameter of deflecting amount of charge particle beam - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method by which the correction parameter of the deflecting amount of a charged particle beam can be decided more accurately when the maximum projected image of the beam becomes a belt-like state, by detecting the deviations of two belt-like marks in the Y-direction from fixed positions, and changing each parameter so that each detected deviation may become zero. SOLUTION: After a belt-like mark M1 is moved to a point P1 by moving a movable stage by -L in the X-direction and L in the Y-direction, the deviation ΔY1 of the mark M1 in the Y-direction from a point Q1 is detected based on the differential waveform of back-scattered electron detecting amount. Then, ΔY2 to ΔY4 are similarly detected and coordinate transformation parameters Gy, Ry, Hy, and Oy are respectively corrected to Gy+ΔGy, Ry+ΔRy, Hy+ΔHy, and Oy+ΔOy by using the detected ΔY1 to ΔY4 and the coordinate values of points P1-P4. For another belt-like mark M2, coordinate transformation parameters Gx, Rx, Hx, and Ox are respectively corrected to Gx+ΔGx, Rx+ΔRx, Hx+ΔHx, and Ox+ΔOx by successively executing the same steps.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for determining a parameter for correcting a deflection amount of a charged particle beam.

[0002]

2. Description of the Related Art With the miniaturization of circuit elements of LSIs, improvement in pattern processing accuracy by lithography technology is required. This processing accuracy is 0. 0 when light exposure is used.
The limit is about 3 μm, but when charged particle beam exposure, for example, electron beam exposure is used, it can be reduced to 0.1 μm or less.

FIG. 7 shows a schematic configuration of a conventional charged particle beam exposure apparatus. The exposure object 10 is a wafer or a mask on which a resist film is attached, and is mounted on a moving stage 11. The charged particle beam EB0 emitted from the charged particle beam emitting device 12 is incident on a blanking aperture array (BAA) mask 13. BAA
Holes arranged in a lattice pattern are formed in the mask 13, and the charged particle beam EB0 is made into a multi-beam through these holes. A pair of deflection electrodes is formed at the edge of each hole, and a drive voltage pattern is applied to these electrodes from a control device 14 via a BAA driver 15, and the deflected electrodes are cut off by a blanking aperture plate 16. Is done.
The multi-beam EB1 that has passed through the aperture 16a of the blanking aperture plate 16 without being deflected is
7, the light is irradiated onto the exposure object 10, and a pattern corresponding to the driving voltage pattern is reduced and projected on the exposure object 10.

[0004] A deflector 18 arranged below the blanking aperture plate 16 is for scanning the multi-beam EB1 on the wafer. The deflection amount (X, Y) is supplied from the control device 14 to the correction circuit 19, and is converted into the deflection amount (X ′, Y ′). These X 'and Y' are converted into analog signals by the D / A conversion circuits 20X and 20Y, respectively, and the X signals of the deflector 18 are transmitted through the amplifier circuits 21X and 21Y.
It is applied to the deflection unit and the Y deflection unit.

The range in which the deflector 18 can deflect the multi-beam EB1 with a predetermined accuracy is, for example, the field P1P2P3P4 shown in FIG. 8 if the parameters of the correction circuit 19 are properly set. If the correction circuit 19 is not used or if the parameters of the correction circuit 19 are not set properly, the deflector 18 may be unable to operate due to an error in the mounting position of the deflector 18 or a difference between the X-direction deflection sensitivity and the Y-direction deflection sensitivity. The deflection position to the points P1 to P4 has an error, and
1 to Q4. These points Q1 to Q4 are respectively point P1.
The parameters of the correction circuit 19 are determined so as to be P4.

A cross mark M0 as shown in FIG. 9 is used to detect the deviation of the points Q1 to Q4 from the points P1 to P4. The cross mark M0 is formed on the exposure object 10 or its holder. The cross mark M0 is
For example, tantalum T whose electron reflectivity is smaller than silicon
a, and a part thereof was peeled off to expose the silicon cross mark.

When the charged particle beam is an electron beam, the multi-beam EB1 is swung by the deflector 18 so that the cross mark M
0, and the reflected electrons EB from the electron beam irradiation position
2 is detected by the detectors 22A and 22B. A pair of detectors (not shown) is also arranged at a position where the detectors 22A and 22B are rotated by 90 ° around the optical axis AX, and their outputs are added by an adder 23 to detect the reflected electron detection amount IB Is obtained. The backscattered electron detection amount IB is further differentiated by a differentiating circuit 24 to obtain a backscattered electron detection amount differential value DIB, which is supplied to the control device 14.

[0008] The position of the moving stage 11 is measured by a laser interferometer 25, and the result is supplied to the controller 14. Here, the holes formed in the BAA mask 13 are, for example, 64 holes in the X direction and 4 holes in the Y direction, for a total of 64 holes.
× 4 = 256, and at the time of exposure, the beam projection image on the exposure object 10 is scanned by the deflector 18 in the Y direction.

When the position of the cross mark M0 in the Y direction is detected, for example, 64 × 1 rows of multi-beams EB1 pass through the aperture 16a to form a band-shaped projection image 26 indicated by oblique lines. Scanning is performed in the Y direction. At this time, the backscattered electron detection amount IB and the backscattered electron detection amount differential value DIB are as shown in FIGS. 10A and 10B, respectively. The control device 14 detects the value of Y supplied to the correction circuit 19 at the average time tm of the positive peak and the negative peak of the reflected electron detection amount differential value DIB as the Y direction position of the cross mark M0. The reason for reducing the number of columns of the strip projection image 26 is as follows.
This is because the pulse width of the reflected-electron detection amount differential waveform is narrowed to more accurately detect the position of the middle point in the Y direction of the cross mark corresponding to the average time tm.

[0010]

However, when the multi-beam EB1 is scanned in the X direction to cross the cross mark M0, the number of holes in one row of the projected image 27 is as small as 4, so that the signal intensity is reduced. In order to increase the number of rows, for example, the number of columns must be set to as large as 16, and the shape of the projected image 27 is significantly different from the shape of the projected image 26 in the case of Y-direction scanning. For this reason, the reflected electron detection amount IB and the reflected electron detection amount differential value DIB are as shown in FIGS. 10C and 10D, respectively, and the peak width of the reflected electron detection amount differential value DIB is widened and the average value is increased. The detection accuracy of the midpoint in the X direction of the cross mark M0 at the time point tm decreases. As a result, the values of the parameters of the correction circuit 19 become inaccurate, and the accuracy of the exposure pattern decreases.

Such a problem occurs when the maximum projected image of the charged particle beam has a band shape even when another mask is used instead of the BAA mask 13. SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to determine a deflection correction parameter more accurately when a maximum projected image of a charged particle beam has a band shape. It is to provide a method.

[0012]

Means for solving the problem and its operation and effect In the first aspect, the expression X '= fx (X, X, Y) for converting the deflection amount input (X, Y) into (X', Y ') for deflection amount correction. In the charged particle beam deflection amount correction parameter determination method for determining m parameters included in each of Y) and Y ′ = fy (X, Y), the first band-shaped mark parallel to the X axis and the X axis Is mounted on a stage, and (1) the stage is moved in the stage position measurement coordinate system to move the first band mark away from the center of the deflection field. (2) In the beam deflection coordinate system, a band-shaped projection image parallel to the X-axis is scanned near the position Pi in a direction parallel to the Y-axis to cross the first band-shaped mark. Detecting reflected electrons or secondary electrons from the substrate Detecting the Y direction deviation ΔYi from the position Pi of 1 strip mark, the step (1)
And (2) are executed for each of i = 1 to m, and fy (X,
Y) changing m parameters in (3) moving the stage in the stage position measuring coordinate system to move the second band mark to the position Pj, and (4) changing the beam deflection coordinate system. Scanning a band-shaped projection image parallel to the X-axis or inclined in the same rotational direction as the angle θ with respect to the X-axis near the position Pj in a direction parallel to the Y-axis to traverse the second band-shaped mark; A reflected electron or a secondary electron is detected from above, and a deviation ΔY in the Y direction of the second band mark from the position Pj is detected.
ja, and a deviation ΔXj in the X direction from the deviation ΔYja
= ΔYja · cotθ, and the steps (3) and (4) are executed for each of j = 1 to m, so that the detected deviation ΔX1 to ΔXm in fx (X, Y) is set to 0. Change m parameters.

According to the charged particle beam deflection amount correction parameter determining method, even if the maximum projected image of the charged particle beam is strip-shaped, the strip-shaped projected image can be scanned only in the Y direction. As shown in FIG. 9, there is no significant difference in the projected image shape between the X-direction scanning and the Y-direction scanning, and an effect is obtained that the deflection amount correction parameter can be determined more accurately than in the past.

In step (4), when a belt-shaped projection image inclined in the same rotational direction as the angle θ with respect to the X axis is scanned, the detection waveform of reflected electrons or secondary electrons becomes sharper. , Y-direction deviation ΔYja can be detected more accurately, so that the deflection amount correction parameter can be determined more accurately. In the charged particle beam deflection amount correction parameter determining method according to a second aspect, in the first aspect, before the step (1), the stage is adjusted so that a center point of the first mark in the Y direction is positioned on the optical axis. Then, the position Pi is equal to the detection position of the stage with reference to the stage position at this time, and the center point of the second mark is positioned on the optical axis before the step (3). By moving the stage, the position Pj
Is equal to the detected position of the stage based on the stage position at this time.

According to a third aspect of the present invention, in the first or second aspect, before the step (3), the charged particle beam is parallel to the Y axis in the stage position measurement coordinate system. The second band-shaped mark is scanned across the second band-shaped mark, reflected electrons or secondary electrons from the base material are detected to detect the Y-direction position Y0 of the second band-shaped mark, and the stage is moved along the X-axis. In the stage position measurement coordinate system, the charged particle beam is scanned in a direction parallel to the Y-axis to traverse the second band-like mark, and reflected electrons or secondary electrons from the base material are moved. Is detected to detect the Y-direction position Y0 + ΔY of the second band-shaped mark, and the inclination angle θ of the second band-shaped mark is obtained from ΔX and ΔY.

According to the charged particle beam deflection amount correction parameter determining method, since the angle θ of the strip mark M2 is measured, the deviation ΔYja in the Y direction is shifted from the deviation ΔXja in the X direction.
j = ΔYja · cotθ can be calculated more accurately, and therefore, there is an effect that the deflection amount correction parameter can be determined more accurately than in the case of the first aspect.

According to a fourth aspect of the present invention, there is provided a charged particle beam deflection amount correction parameter determining method according to any one of the first to third aspects, wherein the processing of changing the m parameters of the function fx (X, Y) is performed. The process of changing m parameters of fy (X, Y) is executed a plurality of times. Since the stage position measurement coordinate system and the beam deflection coordinate system are used, there is an effect that the deflection amount correction parameter can be determined more accurately by performing the plural times than in the case of performing once.

In the charged particle beam deflection amount correction parameter determining method according to a fifth aspect, in any one of the first to fourth aspects, fx (X, Y) and fy (X, Y) are respectively fx (X, Y). , Y) = X + Gx.X + Rx.Y + Hx.XY
+ Ox fy (X, Y) = Y + Gy · Y + Ry · X + Hy · XY
+ Oy where Gx, Rx, Hx, Ox, Gy, R
y, Hy and Oy are the above parameters.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] In the first embodiment, the same hardware configuration as the charged particle beam exposure apparatus shown in FIG. 7 is used. However, the mark formed on the exposure object 10 or its holder is inclined at an angle θ with respect to the band-shaped mark M1 in the X-axis direction as shown in FIG. 2A and the X-axis as shown in FIG. A band mark M2 is used. This X
The axis is a direction parallel to the strip projection image 26 as in FIG.

In FIG. 3A, a point C is an intersection of the optical axis and the exposure object 10, and is the center of the field P1P2P3P4 within a range that can be deflected by the deflector 18 with a predetermined accuracy. The width of this field in the X direction and the width in the Y direction may be different from each other, but for simplicity, it is assumed that both are 2L. Since the parameter setting of the correction circuit 19 is insufficient, when the deflector 18 attempts to set the multibeam EB1 on the exposure object 10 to the points P1 to P4, the points actually become the points Q1 to Q4, respectively. I do.

Here, the correction circuit 19 converts the deflection amount input (X, Y) into (X ', Y'). X 'and Y'
Are functions of X and Y, and X ′ = fx (X,
Y) and Y ′ = fy (X, Y). Hereinafter, the functions fx (X, Y) and fy (X, Y) are respectively expressed as fx (X, Y) = X + Gx · X + Rx · Y + Hx · XY
+ Ox fy (X, Y) = Y + Gy · Y + Ry · X + Hy · XY
The case of approximating + Oy will be described. Here, gain Gx, rotation Rx, trapezoid Hx, offset Ox, gain G
y, rotation Ry, trapezoidal Hy and offset Oy
Is the above constant parameter.

FIG. 1 shows a procedure for determining a charged particle beam deflection amount correction parameter for determining a parameter of the correction circuit 19 by a device corresponding to the control device 14 of FIG. (S
0) The midpoint in the Y direction of the band mark M1, for example, the band mark M
So that the center of the moving stage 1 is located on the optical axis.
Move 1 That is, the band mark M1 is moved to the center C of the field P1P2P3P4.

Whether or not the field center C is at the midpoint of the strip mark M1 can be confirmed by scanning the beam EB1 in the Y direction and detecting the reflected electron detection amount differential waveform. Moving stage 1 by laser interferometer 25 when field center C is the center of strip mark M1
If the position of the moving stage 11 is detected by the laser interferometer 25 using the detection position of 1 as the origin, this position becomes equal to the center position of the strip mark M1 in the stage position measurement coordinate system.

(S1a) Move the moving stage 11 in the X direction.
By moving L in the L and Y directions, the band mark M1 is moved to the point P1 as shown in FIG. (S1b) The multi-beam EB1 is swung in the Y direction about the point Q1 by the deflector 18 so that the band mark M
1 is scanned with a beam in the Y direction. That is, the deflection amount (X
1, Y) is changed in the range of Y1-a ≦ Y ≦ Y1 + a. This Y direction is the Y direction in the beam deflection coordinate system,
There is a slight deviation from the Y direction in FIG.

(S1c) A deviation ΔY1 of the center of the belt-shaped mark M1 in the Y direction with respect to the point Q1 is detected based on the above-mentioned differentiated waveform of the detected backscattered electrons. (S2) By moving the moving stage 11 by −2L in the Y direction, the belt-shaped mark M1 is moved to the point P2 as shown in FIG. In the same manner as in steps S1b and S1c, a shift ΔY2 of the center of the belt-shaped mark M1 in the Y direction with respect to the point Q2 is detected.

(S3) Move the moving stage 11 by 2 L in the X direction.
By moving, the belt-shaped mark M1 is moved to the point P3 as shown in FIG. In the same manner as in steps S1b and S1c, a deviation ΔY3 of the center of the strip mark M1 in the Y direction with respect to the point Q3 is detected. (S4) By moving the moving stage 11 by 2L in the Y direction, the band mark M1 is moved to the point P as shown in FIG.
Move to 4. In the same manner as in steps S1b and S1c, a deviation ΔY4 of the center of the strip mark M1 in the Y direction from the point Q4 is detected.

(S5) The above steps S1c and S2 to S
The coordinate conversion parameters Gy, Ry, and Hy are calculated using the deviations ΔY1 to ΔY4 detected in Step 4 and the coordinate values of the points P1 to P4.
Then, errors ΔGy, ΔRy, ΔHy, and ΔOy of Oy and Oy are calculated, and the coordinate conversion parameters Gy, Ry, Hy, and Oy are corrected to Gy + ΔGy, Ry + ΔRy, Hy + ΔHy, and Oy + ΔOy, respectively. Thereby, the correction circuit 19
Of the eight parameters described above, four are accurate, and if the multi-beam landing points are to be set to points P1 to P4, they will actually be points R1 to R4, respectively, as shown in FIG.

(S10) The midpoint in the Y direction of the strip mark M2,
For example, the moving stage 11 is moved such that the center of the band mark M2 is located on the optical axis. That is, FIG.
As shown in (A), the band mark M2 is set in the field P1P.
Move to the center of 2P3P4. Whether the field center C is at the midpoint of the strip mark M2 is determined by the multi-beam E
This can be confirmed by scanning B1 in the Y direction and detecting the reflected electron detection amount differential waveform. When the field center C is the center of the strip mark M2, the detection position of the moving stage 11 by the laser interferometer 25 is set as the origin, and the position of the moving stage 11 is detected by the laser interferometer 25. It is equal to the center position of the strip mark M2 in the position measurement coordinate system.

(S11a) The moving stage 11 is moved by -L in the X direction and by L in the Y direction, and the strip mark M2 is moved to the point P1 as shown in FIG. 4B. (S11b) The deflector 18 converts the multi-beam EB1 into
The beam is scanned in the Y direction on the strip mark M2 by swinging in the Y direction about the point R1. That is, the deflection amount (X1, Y) is changed in the range of Y1-a≤Y≤Y1 + a. This Y direction is a Y direction in the beam deflection coordinate system, and is slightly shifted from the Y direction in FIG.

(S11c) A deviation ΔY1a of the center S1 of the belt-shaped mark M2 in the Y direction with respect to the point R1 is detected based on the above-mentioned differentiated waveform of the detected amount of backscattered electrons. This deviation ΔY1a
Then, the deviation ΔX1 of the center P1 in the X direction of the strip mark M2 shown in FIG. 5 is calculated as ΔX1 = ΔY1a · cotθ. (S12) By moving the moving stage 11 by −2L in the Y direction, the belt-shaped mark M2 is moved to the point P2 as shown in FIG. 4C. Steps S11b and S11
Similarly to c, a deviation ΔY2a of the center of the strip mark M2 in the Y direction with respect to the point R2 is detected. From the deviation ΔY2a, the deviation ΔX2 of the center of the belt-shaped mark M2 in the X direction is represented by ΔX
2 = ΔY2a · cotθ.

(S13) Move the moving stage 11 in the X direction by 2
By moving L, the belt-shaped mark M2 is moved to the point P3 as shown in FIG. Step S11b
Similarly to S11c, a deviation ΔY3a of the center of the strip mark M2 in the Y direction from the point R3 is detected. From the deviation ΔY3a, a deviation ΔX of the center of the belt-shaped mark M2 in the X direction is obtained.
3 is calculated as ΔX3 = ΔY3a · cotθ.

(S14) Move the moving stage 11 in the Y direction 2
By moving L, the band mark M2 is moved to the point P4 as shown in FIG. Step S11b
Similarly to S11c, a deviation ΔY4a of the center of the strip mark M2 in the Y direction from the point R4 is detected. From the deviation ΔY4a, a deviation ΔX of the center of the belt-shaped mark M2 in the X direction is obtained.
4 is calculated as ΔX4 = ΔY4a · cotθ.

(S15) Steps S11c and S1
2 to the deviations ΔX1 to ΔX4 detected in S14 and the points P1 to
Using the coordinate values of P4, coordinate conversion parameters Gx, R
x, Hx and Ox errors ΔGx, ΔRx, ΔHx and Δ
Ox is calculated, and coordinate conversion parameters Gx, Rx, Hx, and Ox are respectively calculated as Gx + ΔGx, Rx + ΔRx, Hx +
It is corrected to ΔHx and Ox + ΔOx.

If the above processing does not provide sufficient correction,
The above processing is repeated a plurality of times. According to the charged particle beam deflection amount correction parameter determining method of the present embodiment, even when the maximum projected image of the charged particle beam is a band, the band projected image 26 parallel to the band mark M1 is By scanning in a direction perpendicular to and traversing the band mark M1, a Y-direction deflection error ΔY is obtained. Based on this, a parameter of a conversion formula Y ′ = fy (X, Y) is determined, and the band projection image 26 and the angle θ are determined. A band-shaped projection image 2 on the inclined band-shaped mark M2
In 6, scanning is performed in a direction perpendicular to the belt-shaped projection image 26 and crossing the belt-shaped mark M2 to obtain a Y-direction deflection error ΔY,
The X-direction deflection error ΔX is calculated from the error ΔY, and the parameters of the conversion equation X ′ = fx (X, Y) are determined based on the error. Therefore, as shown in FIG. The parameters of the deflector correction circuit can be set so that the shape does not greatly differ and the deflection error can be made smaller than in the past.

[Second Embodiment] FIG. 6 is a diagram showing scanning of a strip projection image 26A on a strip mark M2 according to a second embodiment of the present invention. In the second embodiment, the belt-shaped projected image 26A is inclined at an angle θ with respect to the X axis (the longitudinal direction of the blanking aperture array), and the tilted image 26A is formed into a belt-shaped mark M2.
And parallel.

The angle θ of the band mark M2 can be detected as follows. (1) In the beam deflection coordinate system, the charged particle beam is Y
Scanning is performed in a direction parallel to the axis so as to cross the band mark M2, and the Y direction position Y0 of the band mark M2 is detected from the reflected electron detection amount differential waveform. (2) The stage 11 is moved by ΔX in parallel with the X axis.

(3) In the beam deflection coordinate system, the charged particle beam is scanned in a direction parallel to the Y axis to form a strip mark M
2, and the Y direction position Y0 + ΔY of the band mark M2 is detected from the reflected electron detection amount differential waveform. (4) Obtain the angle θ of the band mark M2 from tan θ = ΔY / ΔX. The other points are the same as the first embodiment.

In the second embodiment, a strip projection image 26A
Is tilted by an angle θ, and is made parallel to the band-shaped mark M2.
The measurement accuracy of 1a to ΔY4a is improved. Also, since the angle θ of the band mark M2 is detected, the deviations ΔY1a to ΔY1a to Δ
The deviations ΔX1 to ΔX4 from Y4a can be calculated more accurately. Therefore, compared to the case of the first embodiment,
The parameters of the deflector correction circuit 19 can be determined so that the deflection error can be reduced.

[Brief description of the drawings]

FIG. 1 is a flowchart showing a procedure for determining a charged particle beam deflection amount correction parameter according to the first embodiment of the present invention.

FIG. 2 is a diagram illustrating scanning of a band-shaped projection image with respect to two types of band-shaped marks.

FIG. 3 is an explanatory diagram of steps S0 to S4 in FIG. 1;

FIG. 4 is an explanatory diagram of steps S10 to S14 in FIG.

FIG. 5 is an explanatory diagram of step S11c in FIG. 1;

FIG. 6 is a diagram illustrating scanning of a band-shaped projection image on a band-shaped mark according to the second embodiment of the present invention.

FIG. 7 is a schematic configuration diagram of a conventional charged particle beam exposure apparatus.

FIG. 8 is a diagram showing before and after correction of a deflection field.

FIG. 9 is an explanatory diagram of beam scanning on a mark.

10A shows a reflected electron detection amount waveform when the beam is scanned in the Y direction in FIG. 9, FIG. 10B shows a differential waveform thereof, and FIG. 10C shows a beam scanning in the X direction in FIG. FIG. 7D is a diagram showing a reflected-electron detection amount waveform at the time of performing the above operation, and FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 10 Exposure target 11 Moving stage 12 Charged particle beam emitting device 13 BAA mask 17 Objective lens 18 Deflector 19 Correction circuit 20X, 20Y D / A conversion circuit 21X, 21Y Amplification circuit 22A, 22B Detector 23 Addition circuit 24 Differentiation circuit 25 Laser interferometer 26 Strip projection image M0 Cross mark M1, M2 Strip mark C Field center

Claims (5)

[Claims] 1. An expression for converting deflection amount input (X, Y) to (X ', Y') for correcting deflection amount, wherein X '= fx (X, Y) and Y' = fy (X, Y). In a method for determining a charged particle beam deflection amount correction parameter for determining m parameters included in each, a first strip mark parallel to the X axis and a second strip mark inclined at an angle θ with respect to the X axis are formed. (1) In the stage position measurement coordinate system, the stage is moved to move the first strip mark to a position Pi away from the center of the deflection field, and (2) beam deflection coordinates In the system, a band-shaped projection image parallel to the X-axis is scanned near the position Pi in a direction parallel to the Y-axis to traverse the first band-shaped mark, and reflected electrons or secondary electrons from the base material are detected. And the position Pi of the first strip mark
, The steps (1) and (2) are performed for each of i = 1 to m, and fy (X, Y) is set so that the detected shifts ΔY1 to ΔYm become zero. And (3) moving the stage in the stage position measurement coordinate system to move the second band mark to the position Pj; and (4) changing the beam deflection coordinate system in the stage position measurement coordinate system. Parallel to X axis or X
A belt-shaped projection image inclined in the same rotational direction as the angle θ with respect to the axis is scanned near the position Pj in a direction parallel to the Y-axis to traverse the second belt-shaped mark, and reflected electrons or 2 A secondary electron is detected to detect a deviation ΔYja of the second band mark from the position Pj in the Y direction, and a deviation ΔXj = ΔYja · cotθ in the X direction is calculated from the deviation ΔYja. 4) is performed for each of j = 1 to m, and m parameters in fx (X, Y) are changed so that the detected shifts ΔX1 to ΔXm become 0. A method for determining a beam deflection correction parameter. 2. Prior to the step (1), the stage is moved so that the center point of the first mark in the Y direction is located on the optical axis, and the position Pi is determined based on the stage position at this time. Before the step (3), the stage is moved so that the center point of the second mark is located on the optical axis, and the position P
2. The method according to claim 1, wherein j is equal to a detected position of the stage with reference to the stage position at this time. 3. Before the step (3), in the stage position measurement coordinate system, the charged particle beam is scanned in a direction parallel to the Y axis to cross the second band mark, and To detect the position Y0 of the second band mark in the Y direction by detecting reflected electrons or secondary electrons of the second band mark, and to move the stage by ΔX in parallel with the X axis. Scanning in a direction parallel to the axis to traverse the second band mark, detecting reflected electrons or secondary electrons from the base material, detecting the Y direction position Y0 + ΔY of the second band mark, And the ΔY, the inclination angle θ of the second band mark
3. The method according to claim 1, wherein the correction parameter is determined. 4. A process for changing the m parameters of the function fx (X, Y) and the process of changing the m parameters of the function fy (X, Y) a plurality of times. 4. The method for determining a deflection amount correction parameter of a charged particle beam according to claim 1, wherein: 5. The fx (X, Y) and fy (X, Y)
Is fx (X, Y) = X + Gx.X + Rx.Y + Hx.XY
+ Ox fy (X, Y) = Y + Gy · Y + Ry · X + Hy · XY
+ Oy where Gx, Rx, Hx, Ox, Gy, R
5. The method according to claim 1, wherein y, Hy, and Oy are the above parameters. 6.