JPH10242347A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH10242347A JPH10242347A JP4626297A JP4626297A JPH10242347A JP H10242347 A JPH10242347 A JP H10242347A JP 4626297 A JP4626297 A JP 4626297A JP 4626297 A JP4626297 A JP 4626297A JP H10242347 A JPH10242347 A JP H10242347A
- Authority
- JP
- Japan
- Prior art keywords
- die pad
- semiconductor device
- heat radiating
- convex portion
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、放熱手段を内蔵し
た樹脂封止型の半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device having a built-in heat radiating means.
【０００２】[0002]
【従来の技術】図２（ａ），（ｂ），（ｃ）は、従来の
樹脂封止型の半導体装置の構造及び製造工程の一例を示
す断面図であり、同図（ａ）には樹脂で封止する前の半
導体装置の断面が示され、同図（ｂ）には同図（ａ）の
半導体装置を樹脂封止するための金型の断面が示されて
いる。又、同図（ｃ）には、樹脂封止した半導体装置の
断面が示されている。この半導体装置では、ダイ１がリ
ードフレーム２の一部であるダイパッド３の上に載置さ
れ、これらが例えば金線４等で結線されている。そし
て、ダイパッド３の下方に放熱板５が位置している。放
熱板５の上部及び下部には円錐形の複数の上部凸部６及
び下部凸部７が付加され、放熱手段が構成されている。
上部凸部６は、ダイパッド３に対する距離を短くするた
め、下部凸部７よりも低く形成されている。この半導体
装置の樹脂封止工程時において、上部凸部６及び下部凸
部７が付加された放熱板５は下部金型８に挿入され、リ
ードフレーム２及びダイパッド３と共に下部金型８とに
挟み込まれる。そして、上部金型９が装着された後に封
止樹脂１０が充填され、図２（ｃ）に示すような樹脂封
止型の半導体装置が完成する。2. Description of the Related Art FIGS. 2 (a), 2 (b) and 2 (c) are cross-sectional views showing an example of a structure and a manufacturing process of a conventional resin-encapsulated semiconductor device. A cross section of the semiconductor device before sealing with a resin is shown, and FIG. 4B shows a cross section of a mold for resin sealing the semiconductor device of FIG. FIG. 1C shows a cross section of the semiconductor device sealed with resin. In this semiconductor device, a die 1 is mounted on a die pad 3 which is a part of a lead frame 2, and these are connected by, for example, a gold wire 4 or the like. The heat sink 5 is located below the die pad 3. A plurality of conical upper convex portions 6 and lower convex portions 7 are added to the upper and lower portions of the heat radiating plate 5 to constitute a heat radiating means.
The upper convex portion 6 is formed lower than the lower convex portion 7 in order to shorten the distance to the die pad 3. In the resin sealing step of the semiconductor device, the heat sink 5 to which the upper convex portion 6 and the lower convex portion 7 are added is inserted into the lower mold 8 and is sandwiched between the lower mold 8 together with the lead frame 2 and the die pad 3. It is. After the upper mold 9 is mounted, the sealing resin 10 is filled, and a resin-sealed semiconductor device as shown in FIG. 2C is completed.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、図２の
半導体装置に内蔵された放熱手段では、図３（ａ），
（ｂ）及び図４（ａ），（ｂ）に示すような課題があっ
た。図３（ａ），（ｂ）は、放熱板の上下誤挿入の例を
示す半導体装置の断面図であり、同図（ａ）には半導体
装置を樹脂で封止するための金型の断面が示されてい
る。又、同図（ｂ）には、樹脂で封止した半導体装置の
断面が示されている。図４（ａ），（ｂ）は、他の放熱
板の上下誤挿入の例を示す半導体装置の断面図であり、
同図（ａ）には半導体装置を樹脂で封止するための金型
の断面が示されている。又、同図（ｂ）には、樹脂で封
止した半導体装置の断面が示されている。図２の半導体
装置の樹脂封止工程時において、放熱板５を下部金型８
に挿入する際、該放熱板５の上下の区別は作業者によっ
て確実に認識されるわけではない。そのため、図３
（ａ）に示すように、放熱板５の上下を誤って挿入され
ることがある。この場合、放熱板５の位置ずれのため、
封止樹脂１０を充填する際の該封止樹脂１０の流れが不
均一になり、ボイドの発生等のパッケージの成型性の劣
化が発生する。更に、上部凸部６よりも高い下部凸部７
がダイパッド３に接触するので、上部凸部６が接触する
場合に比べて放熱板５とダイパッド３との間の距離が長
くなり、熱伝導性の悪い樹脂が多く介在する。又、図４
（ａ），（ｂ）に示すように、下部凸部７の間隔が広
く、該下部凸部７がダイパッド３に接触しない場合、更
に熱伝導が悪くなる。そのため、設計通りの放熱効果が
期待できないという問題があった。However, the heat dissipating means built in the semiconductor device of FIG.
There is a problem as shown in FIG. 4B and FIGS. 4A and 4B. FIGS. 3A and 3B are cross-sectional views of a semiconductor device showing an example of incorrect insertion of a heat sink up and down. FIG. 3A is a cross-sectional view of a mold for sealing the semiconductor device with a resin. It is shown. FIG. 2B shows a cross section of the semiconductor device sealed with a resin. FIGS. 4A and 4B are cross-sectional views of a semiconductor device showing an example of erroneous vertical insertion of another heat sink.
FIG. 1A shows a cross section of a mold for sealing a semiconductor device with a resin. FIG. 2B shows a cross section of the semiconductor device sealed with a resin. In the resin sealing step of the semiconductor device of FIG.
When inserting the heat radiating plate 5, it is not always recognized by the operator. Therefore, FIG.
As shown in (a), the upper and lower sides of the heat sink 5 may be erroneously inserted. In this case, due to the displacement of the heat sink 5,
When the sealing resin 10 is filled, the flow of the sealing resin 10 becomes non-uniform, and the moldability of the package deteriorates such as generation of voids. Further, the lower convex portion 7 which is higher than the upper convex portion 6
Is in contact with the die pad 3, the distance between the radiator plate 5 and the die pad 3 is longer than in the case where the upper convex portion 6 is in contact, and more resin with poor heat conductivity is interposed. Also, FIG.
As shown in (a) and (b), when the interval between the lower projections 7 is wide and the lower projections 7 do not contact the die pad 3, the heat conduction is further deteriorated. Therefore, there is a problem that the heat radiation effect as designed cannot be expected.
【０００４】[0004]
【課題を解決するための手段】前記課題を解決するため
に、本発明のうちの第１の発明は、半導体素子と、上側
に前記半導体素子を載置したダイパッドと、前記ダイパ
ッドの下側に配置された放熱手段とを備え、これらが成
形型によって樹脂封止されて所定の形状に成型された半
導体装置において、次のような手段を講じている。即
ち、前記放熱手段は、放熱板と、前記放熱板の上面に配
置され、上端が前記ダイパッドに接触するＭ個（Ｍ≧
３）の上部凸部と、前記放熱板の下面の前記ダイパッド
の射影範囲内に配置され、かつ前記上部凸部と同一の高
さに形成されたＮ個（Ｎ≧３）の下部凸部とを備えてい
る。この第１の発明によれば、以上のように半導体装置
を構成したので、上部凸部の高さと下部凸部の高さとが
同一になる。更に、前記下部凸部は、前記放熱板の下面
の前記ダイパッドの射影範囲内に配置されている。その
ため、樹脂封止工程で放熱板を下部金型に挿入する際、
上下を誤って挿入しても、放熱板が設計通りの位置にな
り、前記下部凸部が前記ダイパッドに接触する。According to a first aspect of the present invention, there is provided a semiconductor device, a die pad having the semiconductor element mounted thereon, and a die pad provided under the die pad. The following means are taken in a semiconductor device which is provided with heat dissipating means arranged, and is sealed with a molding die and molded into a predetermined shape. That is, the heat dissipating means is disposed on the heat dissipating plate and the upper surface of the heat dissipating plate, and M heat sinks (M ≧ M) whose upper end contacts the die pad are provided.
3) upper N convex portions and N (N ≧ 3) lower convex portions which are arranged within the projection range of the die pad on the lower surface of the heat sink and are formed at the same height as the upper convex portions. It has. According to the first aspect of the invention, since the semiconductor device is configured as described above, the height of the upper protrusion is equal to the height of the lower protrusion. Further, the lower convex portion is disposed within a projection range of the die pad on a lower surface of the heat sink. Therefore, when inserting the heat sink into the lower mold in the resin sealing process,
Even if the upper and lower parts are erroneously inserted, the heat radiating plate is in the designed position, and the lower convex portion contacts the die pad.
【０００５】第２の発明では、半導体素子と、上側に前
記半導体素子を載置したダイパッドと、前記ダイパッド
の下側に配置された放熱手段とを備え、これらが成形型
によって樹脂封止されて正方形状に成型された半導体装
置において、次のような手段を講じている。即ち、前記
放熱手段は、正方形状の放熱板と、前記放熱板の上面の
前記ダイパッドの射影範囲を該射影範囲の中心を基準に
して４等分した各範囲に該中心から等距離かつ等間隔で
隣り合う位置にそれぞれ配置され、かつ上端が前記ダイ
パッドに接触する複数の上部凸部と、前記放熱板の下面
の前記ダイパッドの射影範囲を該射影範囲の中心を基準
にして４等分した各範囲に該中心から等距離かつ等間隔
で隣り合う位置にそれぞれ配置され、かつ前記上部凸部
と同一の高さに形成された複数の下部凸部とを備えてい
る。この第２の発明によれば、上部凸部及び下部凸部は
放熱板のダイパッドの射影範囲の中心を基準にして４等
分した各範囲に該中心から等距離かつ等間隔で隣り合う
位置にそれぞれ配置される。更に、上部凸部及び下部凸
部は、同一の高さに形成される。そのため、樹脂封止工
程で放熱板を下部金型に挿入する際、作業者が誤った方
向で挿入しても放熱板が設計通りの位置になり、封止樹
脂の流れに対する影響が同一になる。従って、前記課題
を解決できるのである。According to a second aspect of the present invention, there is provided a semiconductor device, a die pad on which the semiconductor device is mounted on an upper side, and heat dissipating means disposed on a lower side of the die pad. For a semiconductor device molded into a square shape, the following measures are taken. That is, the heat radiating means includes a square heat radiating plate, and a projection area of the die pad on the upper surface of the heat radiating plate divided into four equal parts based on the center of the projecting area at equal distances and equidistant from the center. And a plurality of upper convex portions each having an upper end contacting the die pad, and a projection range of the die pad on a lower surface of the heat sink being divided into four equal parts based on the center of the projection range. A plurality of lower projections are respectively disposed at equal distances and at equal intervals from the center in the range, and are formed at the same height as the upper projections. According to this second aspect, the upper convex portion and the lower convex portion are located at positions adjacent to each other at equal distances and equal intervals from the center in each of the four quarters based on the center of the projection range of the die pad of the heat sink. Each is arranged. Further, the upper convex portion and the lower convex portion are formed at the same height. Therefore, when inserting the heat sink into the lower mold in the resin sealing step, even if the operator inserts the heat sink in the wrong direction, the heat sink becomes the designed position and the effect on the flow of the sealing resin becomes the same. . Therefore, the above problem can be solved.
【０００６】[0006]
【発明の実施の形態】第１の実施形態 図１（ａ），（ｂ）は、本発明の第１の実施形態を示す
放熱手段を内蔵した半導体装置の構造図であり、同図
（ａ）には樹脂で封止した半導体装置の断面が示され、
同図（ｂ）には同図（ａ）中の放熱手段の側面が示され
ている。この半導体装置は、図１（ａ）に示すように、
半導体素子であるダイ１１を有している。ダイ１１はリ
ードフレーム１２の一部であるダイパッド１３の上に載
置され、これらが例えば金線１４等で結線されている。
そして、ダイパッド１３の下方に放熱板１５が位置して
いる。放熱板１５の上部及び下部にはダイパッド１３の
射影範囲内に配置された例えば円錐形の複数の上部凸部
１６及び下部凸部１７が付加され、放熱手段が構成され
ている。そして、これらが封止樹脂２０で封止されてい
る。尚、放熱板１５、上部凸部１６、及び下部凸部１７
は、例えば銅等の熱伝導率の良い材質で製作されてい
る。又、図１（ｂ）に示すように、上部凸部１６の高さ
Ｌ１と下部凸部１７の高さＬ２とは同一であり、これら
が従来の図３（ａ）中の上部凸部６の高さと同一になっ
ている。そして、上部凸部１６の高さＬ１、下部凸部１
７の高さＬ２、及び放熱板１５の厚さｄの合計が、ダイ
パッド１３の下面とこの半導体装置の下面との距離に等
しくなっている。放熱板１５は、下部凸部１７又は上部
凸部１６がこの半導体装置の樹脂封止工程で用いられる
下部金型の底面に接触した状態で該下部金型の壁面にほ
ぼ接触する大きさに形成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment FIGS. 1A and 1B are structural views of a semiconductor device having a built-in heat radiating means according to a first embodiment of the present invention. ) Shows a cross section of the semiconductor device sealed with resin.
FIG. 2B shows the side surface of the heat radiation means in FIG. This semiconductor device, as shown in FIG.
It has a die 11 which is a semiconductor element. The die 11 is mounted on a die pad 13 which is a part of the lead frame 12, and these are connected by, for example, a gold wire 14.
Then, the heat radiating plate 15 is located below the die pad 13. A plurality of, for example, conical upper convex portions 16 and lower convex portions 17 arranged within the projection range of the die pad 13 are added to the upper and lower portions of the heat radiating plate 15 to constitute a heat radiating means. These are sealed with a sealing resin 20. Note that the heat sink 15, upper convex portion 16, and lower convex portion 17 are provided.
Is made of a material having good thermal conductivity, such as copper. Further, as shown in FIG. 1B, the height L1 of the upper convex portion 16 and the height L2 of the lower convex portion 17 are the same, and these are the same as the conventional upper convex portion 6 in FIG. Of the same height. Then, the height L1 of the upper protrusion 16 and the lower protrusion 1
7 and the thickness d of the heat sink 15 are equal to the distance between the lower surface of the die pad 13 and the lower surface of the semiconductor device. The heat radiating plate 15 is formed to have a size such that the lower convex portion 17 or the upper convex portion 16 substantially contacts the wall surface of the lower mold in a state of contacting the bottom surface of the lower mold used in the resin sealing step of the semiconductor device. Have been.
【０００７】この半導体装置の樹脂封止工程では、作業
者が放熱板１５の上下を正しく認識して下部金型に挿入
した場合、上部凸部１６がダイパッド１３に接触し、か
つ下部凸部１７が下部金型に接触する状態で挿入され
る。一方、上部凸部１６の高さＬ１と下部凸部１７の高
さＬ２とが同一に形成されているので、作業者が放熱板
１５の上下を誤って認識して下部金型に挿入した場合で
も、上部凸部１６が下部金型に接触し、かつ下部凸部１
７がダイパッド１３に接触する状態で挿入される。従っ
て、作業者が放熱板１５の上下を誤って挿入しても、放
熱板１５が位置ずれを起こさずに設計通りの位置にな
り、封止樹脂２０を充填する際の該封止樹脂２０の流れ
の不均一によるボイドの発生等のパッケージの成型性の
劣化を防止できる。更に、放熱板１５の上下が誤ってい
ても、該放熱板１５とダイパッド１３との間の距離は該
放熱板１５を正しく挿入した場合と同一になる。そのた
め、図３（ｂ）に示す熱伝導性の悪い樹脂が多く介在す
る状態を防止できる。又、放熱板１５の上下が誤ってい
ても、下部凸部１７がダイパッド１３に接触するので、
図４（ｂ）に示す下部凸部７がダイパッド３に接触しな
くなって熱伝導が悪くなる状態を防止できる。以上のよ
うに、この第１の実施形態では、上部凸部１６の高さＬ
１と、下部凸部１７の高さＬ２とを同一に形成したの
で、樹脂封止工程で放熱板１５を下部金型に挿入する
際、上下を誤って挿入しても放熱板１５が設計通りの位
置になり、パッケージの成型性の劣化や放熱効率の低下
を防止できる。In the resin sealing process of the semiconductor device, when the operator correctly recognizes the upper and lower sides of the heat sink 15 and inserts it into the lower mold, the upper convex portion 16 contacts the die pad 13 and the lower convex portion 17 Is inserted in contact with the lower mold. On the other hand, since the height L1 of the upper convex portion 16 and the height L2 of the lower convex portion 17 are formed to be the same, when the operator mistakenly recognizes the upper and lower sides of the heat sink 15 and inserts it into the lower mold. However, the upper protrusion 16 contacts the lower mold and the lower protrusion 1
7 is inserted in contact with the die pad 13. Therefore, even if the operator inserts the heat radiation plate 15 up and down by mistake, the heat radiation plate 15 is in the designed position without causing displacement, and the sealing resin 20 is filled when the sealing resin 20 is filled. Deterioration of the moldability of the package such as generation of voids due to uneven flow can be prevented. Furthermore, even if the heat radiating plate 15 is upside down, the distance between the heat radiating plate 15 and the die pad 13 is the same as when the heat radiating plate 15 is correctly inserted. Therefore, it is possible to prevent a state in which a large amount of resin having poor heat conductivity is interposed as shown in FIG. In addition, even if the heat radiating plate 15 is upside down, the lower convex portion 17 comes into contact with the die pad 13.
A state in which the lower protrusion 7 shown in FIG. 4B does not contact the die pad 3 and heat conduction is deteriorated can be prevented. As described above, in the first embodiment, the height L of the upper convex portion 16 is set.
1 and the height L2 of the lower projection 17 are the same, so that when the heat sink 15 is inserted into the lower mold in the resin sealing step, the heat sink 15 is as designed even if it is inserted upside down. , The deterioration of the moldability of the package and the decrease of the heat radiation efficiency can be prevented.
【０００８】第２の実施形態 図５（ａ），（ｂ）は、本発明の第２の実施形態を示す
放熱手段の構造図であり、第１の実施形態を示す図１
（ｂ）中の要素と共通の要素には共通の符号が付されて
いる。図５（ａ）には放熱手段の側面が示され、図５
（ｂ）には放熱手段の平面が示されている。この放熱手
段では、上部凸部１６は、正方形状の放熱板１５の上面
の図１（ａ）中のダイパッド１３の射影範囲を該射影範
囲の中心ｃを基準にして４等分した各範囲Ａ，Ｂ，Ｃ，
Ｄに該中心ｃから等距離かつ等間隔で隣り合う位置にそ
れぞれ配置されている。又、下部凸部１７は、放熱板１
５の下面のダイパッド１３の射影範囲を該射影範囲の中
心ｃを基準にして４等分した各範囲Ａ，Ｂ，Ｃ，Ｄに該
中心ｃから等距離かつ等間隔で隣り合う位置にそれぞれ
配置されている。そして、図５（ａ）に示すように、上
部凸部１６の高さＬ１と下部凸部１７の高さＬ２とは同
一であり、これらが従来の図３（ａ）中の上部凸部６の
高さと同一になっている。そして、上部凸部１６の高さ
Ｌ１、下部凸部１７の高さＬ２、及び放熱板１５の厚さ
ｄの合計が、ダイパッド１３の下面とこの放熱手段が封
止される半導体装置の下面との距離に等しくなってい
る。放熱板１５は、下部凸部１７又は上部凸部１６が半
導体装置の樹脂封止工程で用いられる下部金型の底面に
接触した状態で該下部金型の壁面にほぼ接触する大きさ
の正方形状に形成されている。 Second Embodiment FIGS. 5 (a) and 5 (b) are structural views of a heat radiating means showing a second embodiment of the present invention, and FIG. 1 showing a first embodiment.
Elements common to those in (b) are denoted by common reference numerals. FIG. 5A shows a side view of the heat radiating means.
(B) shows the plane of the heat radiating means. In this heat radiating means, the upper convex portion 16 divides the projection range of the die pad 13 on the upper surface of the square heat radiating plate 15 in FIG. 1A into four parts A based on the center c of the projection range. , B, C,
D is disposed at a position adjacent to the center c at an equal distance and an equal interval. The lower convex portion 17 is provided with the heat sink 1.
The projection area of the die pad 13 on the lower surface of the area 5 is divided into four equal parts based on the center c of the projection area, and the areas A, B, C, and D are arranged at positions adjacent to the center c at equal distances and intervals. Have been. Then, as shown in FIG. 5A, the height L1 of the upper convex portion 16 and the height L2 of the lower convex portion 17 are the same, and these are the same as the conventional upper convex portion 6 in FIG. Of the same height. The sum of the height L1 of the upper protrusion 16, the height L2 of the lower protrusion 17, and the thickness d of the radiator plate 15 is equal to the lower surface of the die pad 13 and the lower surface of the semiconductor device in which the radiator is sealed. Is equal to the distance. The heat radiating plate 15 has a square shape with a size such that the lower convex portion 17 or the upper convex portion 16 substantially contacts the wall surface of the lower mold in a state where the lower convex portion 17 or the upper convex portion 16 is in contact with the bottom surface of the lower mold used in the resin sealing step of the semiconductor device. Is formed.
【０００９】上部凸部１６及び下部凸部１７は、樹脂封
止工程において封止樹脂の流れ方に対して大きく影響
し、パッケージの成型性の優劣を左右する。そのため、
図５の放熱手段を内蔵した樹脂封止型の半導体装置で
は、上部凸部１６及び下部凸部１７を放熱板１５の前記
中心ｃを基準にして４方向に同一に配置することによ
り、該放熱板１５をどの方向で挿入しても、樹脂封止工
程における封止樹脂の流れに対する影響が同一になり、
パッケージの成型性の劣化を防止できる。以上のよう
に、この第２の実施形態では、上部凸部１６及び下部凸
部１７を放熱板１５のダイパッド１３の射影範囲の中心
ｃを基準にして４方向に同一に配置し、かつ高さを同一
に形成したので、放熱板１５の挿入方向の区別が無くな
り、作業者が誤った方向で挿入しても放熱板が設計通り
の位置になる。そのため、第１の実施形態の利点に加
え、放熱板１５をどの方向で挿入しても、樹脂封止時の
封止樹脂の流れの不均一によるパッケージの成型性の劣
化を防止できる。The upper convex portion 16 and the lower convex portion 17 have a great influence on the flow of the sealing resin in the resin sealing step, and influence the moldability of the package. for that reason,
In the resin-encapsulated semiconductor device incorporating the heat radiating means shown in FIG. 5, the upper convex portion 16 and the lower convex portion 17 are arranged in the same direction in four directions with respect to the center c of the heat radiating plate 15 so that the heat radiation is achieved. Regardless of the direction in which the plate 15 is inserted, the effect on the flow of the sealing resin in the resin sealing step becomes the same,
Deterioration of the moldability of the package can be prevented. As described above, in the second embodiment, the upper convex portion 16 and the lower convex portion 17 are arranged identically in four directions with reference to the center c of the projection range of the die pad 13 of the heat sink 15, and have the same height. Are formed in the same manner, there is no distinction in the insertion direction of the heat radiating plate 15, and even if the operator inserts in a wrong direction, the heat radiating plate is in the designed position. Therefore, in addition to the advantages of the first embodiment, deterioration of the moldability of the package due to uneven flow of the sealing resin at the time of resin sealing can be prevented regardless of the direction in which the heat radiating plate 15 is inserted.
【００１０】尚、本発明は上記実施形態に限定されず、
種々の変形が可能である。その変形例としては、例えば
次のようなものがある。 （ａ） 各実施形態では、上部凸部１６及び下部凸部１
７の形状は円錐形として説明したが、上部凸部１６はダ
イパッド１３に接触するものであれば、例えば円柱形等
の任意の形状でよい。同様に、下部凸部１７は放熱板１
５を支えるものであれば、例えば円柱形等の任意の形状
でよい。 （ｂ） 第２の実施形態における上部凸部１６及び下部
凸部１７は、ダイパッド１３の射影範囲内で円形に等間
隔で配置してもよい。The present invention is not limited to the above embodiment,
Various modifications are possible. For example, there are the following modifications. (A) In each embodiment, the upper convex portion 16 and the lower convex portion 1
Although the shape of 7 has been described as a conical shape, the upper convex portion 16 may have any shape such as a columnar shape as long as the upper convex portion 16 contacts the die pad 13. Similarly, the lower convex portion 17 is provided on the heat sink 1.
5, any shape such as a cylindrical shape may be used. (B) The upper convex portion 16 and the lower convex portion 17 in the second embodiment may be circularly arranged at equal intervals within the projection range of the die pad 13.
【００１１】[0011]
【発明の効果】以上詳細に説明したように、第１の発明
によれば、上部凸部の高さと下部凸部の高さとを同一に
形成したので、樹脂封止工程で放熱板を下部金型に挿入
する際、上下を誤って挿入しても放熱板が設計通りの位
置になり、パッケージの成型性の劣化や放熱効率の低下
を防止できる。第２の発明によれば、上部凸部及び下部
凸部を放熱板のダイパッドの射影範囲の中心を基準にし
て４等分した各範囲に該中心から等距離かつ等間隔で隣
り合う位置にそれぞれ配置したので、放熱板の挿入方向
の区別が無くなり、作業者が誤った方向で挿入しても放
熱板が設計通りの位置になる。そのため、第１の発明の
効果に加え、放熱板をどの方向で挿入しても、樹脂封止
時の封止樹脂の流れの不均一によるパッケージの成型性
の劣化を防止できる。As described above in detail, according to the first aspect, the height of the upper convex portion and the height of the lower convex portion are formed to be the same. When inserting the heat sink into the mold, the heat sink is positioned as designed even if it is inserted upside down incorrectly, thereby preventing deterioration in the moldability of the package and heat radiation efficiency. According to the second aspect, the upper convex portion and the lower convex portion are respectively divided into four equal parts based on the center of the projection range of the die pad of the heat sink at positions equidistant and equidistant from the center, respectively. Since it is arranged, there is no distinction in the insertion direction of the radiator plate, and even if the operator inserts in the wrong direction, the radiator plate is in the designed position. Therefore, in addition to the effects of the first aspect, it is possible to prevent deterioration of the moldability of the package due to uneven flow of the sealing resin at the time of resin sealing, regardless of the direction in which the heat sink is inserted.
【図１】本発明の第１の実施形態の半導体装置の構造図
である。FIG. 1 is a structural diagram of a semiconductor device according to a first embodiment of the present invention.
【図２】従来の樹脂封止型の半導体装置の構造及び製造
工程図である。FIG. 2 is a diagram showing a structure and a manufacturing process of a conventional resin-encapsulated semiconductor device.
【図３】放熱板上下誤挿入の例を示す半導体装置の断面
図である。FIG. 3 is a cross-sectional view of a semiconductor device showing an example of incorrect insertion of a heat sink vertically.
【図４】他の放熱板上下誤挿入の例を示す半導体装置の
断面図である。FIG. 4 is a cross-sectional view of a semiconductor device showing another example of incorrect insertion of a heat sink vertically.
【図５】本発明の第２の実施形態の放熱手段の構造図で
ある。FIG. 5 is a structural view of a heat radiating means according to a second embodiment of the present invention.
１，１１ ダイ ３，１３ ダイパッド ５，１５ 放熱板（放熱手段） ６，１６ 上部凸部（放熱手段） ７，１７ 下部凸部（放熱手段） １０，２０ 封止樹脂 1,11 die 3,13 die pad 5,15 radiator plate (radiator) 6,16 upper convex part (radiator) 7,17 lower convex part (radiator) 10,20 sealing resin
Claims (2)
載置したダイパッドと、前記ダイパッドの下側に配置さ
れた放熱手段とを備え、これらが成形型によって樹脂封
止されて所定の形状に成型された半導体装置において、 前記放熱手段は、 放熱板と、 前記放熱板の上面に配置され、上端が前記ダイパッドに
接触するＭ個（Ｍ≧３）の上部凸部と、 前記放熱板の下面の前記ダイパッドの射影範囲内に配置
され、かつ前記上部凸部と同一の高さに形成されたＮ個
（Ｎ≧３）の下部凸部とを、 備えたことを特徴とする半導体装置。1. A semiconductor device comprising: a semiconductor element; a die pad on which the semiconductor element is mounted; and heat dissipating means disposed on a lower side of the die pad. In the molded semiconductor device, the heat radiating means includes: a heat radiating plate; M (M ≧ 3) upper convex portions disposed on an upper surface of the heat radiating plate and having upper ends in contact with the die pad; And N (N ≧ 3) lower projections disposed within the projection range of the die pad and formed at the same height as the upper projections.
載置したダイパッドと、前記ダイパッドの下側に配置さ
れた放熱手段とを備え、これらが成形型によって樹脂封
止されて正方形状に成型された半導体装置において、 前記放熱手段は、 正方形状の放熱板と、 前記放熱板の上面の前記ダイパッドの射影範囲を該射影
範囲の中心を基準にして４等分した各範囲に該中心から
等距離かつ等間隔で隣り合う位置にそれぞれ配置され、
かつ上端が前記ダイパッドに接触する複数の上部凸部
と、 前記放熱板の下面の前記ダイパッドの射影範囲を該射影
範囲の中心を基準にして４等分した各範囲に該中心から
等距離かつ等間隔で隣り合う位置にそれぞれ配置され、
かつ前記上部凸部と同一の高さに形成された複数の下部
凸部とを、 備えたことを特徴とする半導体装置。2. A semiconductor device, a die pad on which the semiconductor element is mounted, and heat dissipating means disposed below the die pad, which are resin-sealed by a molding die and formed into a square shape. In the semiconductor device, the heat radiating means includes: a square heat radiating plate; and a projecting range of the die pad on the upper surface of the heat radiating plate divided into four equal parts based on the center of the projecting range. It is arranged at a position adjacent to each other at a distance and at equal intervals,
A plurality of upper projections whose upper ends are in contact with the die pad; and a projection area of the die pad on the lower surface of the heat radiating plate is divided into four equal parts with reference to the center of the projection area at equal distances from the center. It is arranged at the position adjacent to each other at intervals,
And a plurality of lower protrusions formed at the same height as the upper protrusions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4626297A JP3630519B2 (en) | 1997-02-28 | 1997-02-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4626297A JP3630519B2 (en) | 1997-02-28 | 1997-02-28 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10242347A true JPH10242347A (en) | 1998-09-11 |
| JP3630519B2 JP3630519B2 (en) | 2005-03-16 |
Family
ID=12742302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4626297A Expired - Fee Related JP3630519B2 (en) | 1997-02-28 | 1997-02-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3630519B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011112728A3 (en) * | 2010-03-10 | 2012-01-12 | Altera Corporation | Package having spaced apart heat sink |
-
1997
- 1997-02-28 JP JP4626297A patent/JP3630519B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011112728A3 (en) * | 2010-03-10 | 2012-01-12 | Altera Corporation | Package having spaced apart heat sink |
| US9054077B2 (en) | 2010-03-10 | 2015-06-09 | Altera Corporation | Package having spaced apart heat sink |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3630519B2 (en) | 2005-03-16 |
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