JP3630519B2 - Semiconductor device - Google Patents

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JP3630519B2
JP3630519B2 JP4626297A JP4626297A JP3630519B2 JP 3630519 B2 JP3630519 B2 JP 3630519B2 JP 4626297 A JP4626297 A JP 4626297A JP 4626297 A JP4626297 A JP 4626297A JP 3630519 B2 JP3630519 B2 JP 3630519B2
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die pad
semiconductor device
heat
convex portion
heat sink
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JPH10242347A (en
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誠司 安藤
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Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

【０００１】
【発明の属する技術分野】
本発明は、放熱手段を内蔵した樹脂封止型の半導体装置に関するものである。
【０００２】
【従来の技術】
図２（ａ），（ｂ），（ｃ）は、従来の樹脂封止型の半導体装置の構造及び製造工程の一例を示す断面図であり、同図（ａ）には樹脂で封止する前の半導体装置の断面が示され、同図（ｂ）には同図（ａ）の半導体装置を樹脂封止するための金型の断面が示されている。又、同図（ｃ）には、樹脂封止した半導体装置の断面が示されている。
この半導体装置では、ダイ１がリードフレーム２の一部であるダイパッド３の上に載置され、これらが例えば金線４等で結線されている。そして、ダイパッド３の下方に放熱板５が位置している。放熱板５の上部及び下部には円錐形の複数の上部凸部６及び下部凸部７が付加され、放熱手段が構成されている。上部凸部６は、ダイパッド３に対する距離を短くするため、下部凸部７よりも低く形成されている。
この半導体装置の樹脂封止工程時において、上部凸部６及び下部凸部７が付加された放熱板５は下部金型８に挿入され、リードフレーム２及びダイパッド３と共に下部金型８とに挟み込まれる。そして、上部金型９が装着された後に封止樹脂１０が充填され、図２（ｃ）に示すような樹脂封止型の半導体装置が完成する。
【０００３】
【発明が解決しようとする課題】
しかしながら、図２の半導体装置に内蔵された放熱手段では、図３（ａ）， （ｂ）及び図４（ａ），（ｂ）に示すような課題があった。
図３（ａ），（ｂ）は、放熱板の上下誤挿入の例を示す半導体装置の断面図であり、同図（ａ）には半導体装置を樹脂で封止するための金型の断面が示されている。又、同図（ｂ）には、樹脂で封止した半導体装置の断面が示されている。図４（ａ），（ｂ）は、他の放熱板の上下誤挿入の例を示す半導体装置の断面図であり、同図（ａ）には半導体装置を樹脂で封止するための金型の断面が示されている。又、同図（ｂ）には、樹脂で封止した半導体装置の断面が示されている。
図２の半導体装置の樹脂封止工程時において、放熱板５を下部金型８に挿入する際、該放熱板５の上下の区別は作業者によって確実に認識されるわけではない。そのため、図３（ａ）に示すように、放熱板５の上下を誤って挿入されることがある。この場合、放熱板５の位置ずれのため、封止樹脂１０を充填する際の該封止樹脂１０の流れが不均一になり、ボイドの発生等のパッケージの成型性の劣化が発生する。更に、上部凸部６よりも高い下部凸部７がダイパッド３に接触するので、上部凸部６が接触する場合に比べて放熱板５とダイパッド３との間の距離が長くなり、熱伝導性の悪い樹脂が多く介在する。又、図４（ａ），（ｂ）に示すように、下部凸部７の間隔が広く、該下部凸部７がダイパッド３に接触しない場合、更に熱伝導が悪くなる。そのため、設計通りの放熱効果が期待できないという問題があった。
【０００４】
【課題を解決するための手段】
前記課題を解決するために、本発明のうちの第１の発明は、半導体素子と、上側に前記半導体素子を載置したダイパッドと、前記ダイパッドの下側に配置された放熱手段とを備え、これらが成形型によって樹脂封止されて所定の形状に成型された半導体装置において、次のような手段を講じている。
即ち、前記放熱手段は、放熱板と、前記放熱板の上面に配置され、上端が前記ダイパッドに接触するＭ個（Ｍ≧３）の上部凸部と、前記放熱板の下面の前記ダイパッドの射影範囲内に配置され、かつ前記上部凸部と同一の高さに形成されたＮ個（Ｎ≧３）の下部凸部とを備えている。
この第１の発明によれば、以上のように半導体装置を構成したので、上部凸部の高さと下部凸部の高さとが同一になる。更に、前記下部凸部は、前記放熱板の下面の前記ダイパッドの射影範囲内に配置されている。そのため、樹脂封止工程で放熱板を下部金型に挿入する際、上下を誤って挿入しても、放熱板が設計通りの位置になり、前記下部凸部が前記ダイパッドに接触する。
【０００５】
第２の発明では、半導体素子と、上側に前記半導体素子を載置したダイパッドと、前記ダイパッドの下側に配置された放熱手段とを備え、これらが成形型によって樹脂封止されて正方形状に成型された半導体装置において、次のような手段を講じている。
即ち、前記放熱手段は、正方形状の放熱板と、前記放熱板の上面の前記ダイパッドの射影範囲を該射影範囲の中心を基準にして４等分した各範囲に該中心から等距離かつ等間隔で隣り合う位置にそれぞれ配置され、かつ上端が前記ダイパッドに接触する複数の上部凸部と、前記放熱板の下面の前記ダイパッドの射影範囲を該射影範囲の中心を基準にして４等分した各範囲に該中心から等距離かつ等間隔で隣り合う位置にそれぞれ配置され、かつ前記上部凸部と同一の高さに形成された複数の下部凸部とを備えている。
この第２の発明によれば、上部凸部及び下部凸部は放熱板のダイパッドの射影範囲の中心を基準にして４等分した各範囲に該中心から等距離かつ等間隔で隣り合う位置にそれぞれ配置される。更に、上部凸部及び下部凸部は、同一の高さに形成される。そのため、樹脂封止工程で放熱板を下部金型に挿入する際、作業者が誤った方向で挿入しても放熱板が設計通りの位置になり、封止樹脂の流れに対する影響が同一になる。従って、前記課題を解決できるのである。
【０００６】
【発明の実施の形態】
第１の実施形態
図１（ａ），（ｂ）は、本発明の第１の実施形態を示す放熱手段を内蔵した半導体装置の構造図であり、同図（ａ）には樹脂で封止した半導体装置の断面が示され、同図（ｂ）には同図（ａ）中の放熱手段の側面が示されている。
この半導体装置は、図１（ａ）に示すように、半導体素子であるダイ１１を有している。ダイ１１はリードフレーム１２の一部であるダイパッド１３の上に載置され、これらが例えば金線１４等で結線されている。そして、ダイパッド１３の下方に放熱板１５が位置している。放熱板１５の上部及び下部にはダイパッド１３の射影範囲内に配置された例えば円錐形の複数の上部凸部１６及び下部凸部１７が付加され、放熱手段が構成されている。そして、これらが封止樹脂２０で封止されている。尚、放熱板１５、上部凸部１６、及び下部凸部１７は、例えば銅等の熱伝導率の良い材質で製作されている。
又、図１（ｂ）に示すように、上部凸部１６の高さＬ１と下部凸部１７の高さＬ２とは同一であり、これらが従来の図３（ａ）中の上部凸部６の高さと同一になっている。そして、上部凸部１６の高さＬ１、下部凸部１７の高さＬ２、及び放熱板１５の厚さｄの合計が、ダイパッド１３の下面とこの半導体装置の下面との距離に等しくなっている。放熱板１５は、下部凸部１７又は上部凸部１６がこの半導体装置の樹脂封止工程で用いられる下部金型の底面に接触した状態で該下部金型の壁面にほぼ接触する大きさに形成されている。
【０００７】
この半導体装置の樹脂封止工程では、作業者が放熱板１５の上下を正しく認識して下部金型に挿入した場合、上部凸部１６がダイパッド１３に接触し、かつ下部凸部１７が下部金型に接触する状態で挿入される。一方、上部凸部１６の高さＬ１と下部凸部１７の高さＬ２とが同一に形成されているので、作業者が放熱板１５の上下を誤って認識して下部金型に挿入した場合でも、上部凸部１６が下部金型に接触し、かつ下部凸部１７がダイパッド１３に接触する状態で挿入される。従って、作業者が放熱板１５の上下を誤って挿入しても、放熱板１５が位置ずれを起こさずに設計通りの位置になり、封止樹脂２０を充填する際の該封止樹脂２０の流れの不均一によるボイドの発生等のパッケージの成型性の劣化を防止できる。更に、放熱板１５の上下が誤っていても、該放熱板１５とダイパッド１３との間の距離は該放熱板１５を正しく挿入した場合と同一になる。そのため、図３（ｂ）に示す熱伝導性の悪い樹脂が多く介在する状態を防止できる。又、放熱板１５の上下が誤っていても、下部凸部１７がダイパッド１３に接触するので、図４（ｂ）に示す下部凸部７がダイパッド３に接触しなくなって熱伝導が悪くなる状態を防止できる。
以上のように、この第１の実施形態では、上部凸部１６の高さＬ１と、下部凸部１７の高さＬ２とを同一に形成したので、樹脂封止工程で放熱板１５を下部金型に挿入する際、上下を誤って挿入しても放熱板１５が設計通りの位置になり、パッケージの成型性の劣化や放熱効率の低下を防止できる。
【０００８】
第２の実施形態
図５（ａ），（ｂ）は、本発明の第２の実施形態を示す放熱手段の構造図であり、第１の実施形態を示す図１（ｂ）中の要素と共通の要素には共通の符号が付されている。図５（ａ）には放熱手段の側面が示され、図５（ｂ）には放熱手段の平面が示されている。
この放熱手段では、上部凸部１６は、正方形状の放熱板１５の上面の図１（ａ）中のダイパッド１３の射影範囲を該射影範囲の中心ｃを基準にして４等分した各範囲Ａ，Ｂ，Ｃ，Ｄに該中心ｃから等距離かつ等間隔で隣り合う位置にそれぞれ配置されている。又、下部凸部１７は、放熱板１５の下面のダイパッド１３の射影範囲を該射影範囲の中心ｃを基準にして４等分した各範囲Ａ，Ｂ，Ｃ，Ｄに該中心ｃから等距離かつ等間隔で隣り合う位置にそれぞれ配置されている。そして、図５（ａ）に示すように、上部凸部１６の高さＬ１と下部凸部１７の高さＬ２とは同一であり、これらが従来の図３（ａ）中の上部凸部６の高さと同一になっている。そして、上部凸部１６の高さＬ１、下部凸部１７の高さＬ２、及び放熱板１５の厚さｄの合計が、ダイパッド１３の下面とこの放熱手段が封止される半導体装置の下面との距離に等しくなっている。放熱板１５は、下部凸部１７又は上部凸部１６が半導体装置の樹脂封止工程で用いられる下部金型の底面に接触した状態で該下部金型の壁面にほぼ接触する大きさの正方形状に形成されている。
【０００９】
上部凸部１６及び下部凸部１７は、樹脂封止工程において封止樹脂の流れ方に対して大きく影響し、パッケージの成型性の優劣を左右する。そのため、図５の放熱手段を内蔵した樹脂封止型の半導体装置では、上部凸部１６及び下部凸部１７を放熱板１５の前記中心ｃを基準にして４方向に同一に配置することにより、該放熱板１５をどの方向で挿入しても、樹脂封止工程における封止樹脂の流れに対する影響が同一になり、パッケージの成型性の劣化を防止できる。
以上のように、この第２の実施形態では、上部凸部１６及び下部凸部１７を放熱板１５のダイパッド１３の射影範囲の中心ｃを基準にして４方向に同一に配置し、かつ高さを同一に形成したので、放熱板１５の挿入方向の区別が無くなり、作業者が誤った方向で挿入しても放熱板が設計通りの位置になる。そのため、第１の実施形態の利点に加え、放熱板１５をどの方向で挿入しても、樹脂封止時の封止樹脂の流れの不均一によるパッケージの成型性の劣化を防止できる。
【００１０】
尚、本発明は上記実施形態に限定されず、種々の変形が可能である。その変形例としては、例えば次のようなものがある。
（ａ） 各実施形態では、上部凸部１６及び下部凸部１７の形状は円錐形として説明したが、上部凸部１６はダイパッド１３に接触するものであれば、例えば円柱形等の任意の形状でよい。同様に、下部凸部１７は放熱板１５を支えるものであれば、例えば円柱形等の任意の形状でよい。
（ｂ） 第２の実施形態における上部凸部１６及び下部凸部１７は、ダイパッド１３の射影範囲内で円形に等間隔で配置してもよい。
【００１１】
【発明の効果】
以上詳細に説明したように、第１の発明によれば、上部凸部の高さと下部凸部の高さとを同一に形成したので、樹脂封止工程で放熱板を下部金型に挿入する際、上下を誤って挿入しても放熱板が設計通りの位置になり、パッケージの成型性の劣化や放熱効率の低下を防止できる。
第２の発明によれば、上部凸部及び下部凸部を放熱板のダイパッドの射影範囲の中心を基準にして４等分した各範囲に該中心から等距離かつ等間隔で隣り合う位置にそれぞれ配置したので、放熱板の挿入方向の区別が無くなり、作業者が誤った方向で挿入しても放熱板が設計通りの位置になる。そのため、第１の発明の効果に加え、放熱板をどの方向で挿入しても、樹脂封止時の封止樹脂の流れの不均一によるパッケージの成型性の劣化を防止できる。
【図面の簡単な説明】
【図１】本発明の第１の実施形態の半導体装置の構造図である。
【図２】従来の樹脂封止型の半導体装置の構造及び製造工程図である。
【図３】放熱板上下誤挿入の例を示す半導体装置の断面図である。
【図４】他の放熱板上下誤挿入の例を示す半導体装置の断面図である。
【図５】本発明の第２の実施形態の放熱手段の構造図である。
【符号の説明】
１，１１ ダイ
３，１３ ダイパッド
５，１５ 放熱板（放熱手段）
６，１６ 上部凸部（放熱手段）
７，１７ 下部凸部（放熱手段）
１０，２０ 封止樹脂[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resin-encapsulated semiconductor device with a built-in heat dissipation means.
[0002]
[Prior art]
2A, 2B, and 2C are cross-sectional views showing an example of the structure and manufacturing process of a conventional resin-encapsulated semiconductor device. FIG. 2A is sealed with resin. A cross section of the previous semiconductor device is shown, and FIG. 4B shows a cross section of a mold for resin-sealing the semiconductor device of FIG. FIG. 2C shows a cross section of a resin-encapsulated semiconductor device.
In this semiconductor device, a die 1 is placed on a die pad 3 which is a part of a lead frame 2, and these are connected by, for example, a gold wire 4 or the like. And the heat sink 5 is located under the die pad 3. A plurality of conical upper convex portions 6 and lower convex portions 7 are added to the upper and lower portions of the heat radiating plate 5 to constitute a heat radiating means. The upper convex portion 6 is formed lower than the lower convex portion 7 in order to shorten the distance to the die pad 3.
During the resin sealing process of this semiconductor device, the heat sink 5 to which the upper convex portion 6 and the lower convex portion 7 are added is inserted into the lower mold 8 and sandwiched between the lead frame 2 and the die pad 3 with the lower mold 8. It is. Then, after the upper mold 9 is mounted, the sealing resin 10 is filled, and a resin-encapsulated semiconductor device as shown in FIG. 2C is completed.
[0003]
[Problems to be solved by the invention]
However, the heat dissipating means built in the semiconductor device of FIG. 2 has problems as shown in FIGS. 3 (a) and 3 (b) and FIGS. 4 (a) and 4 (b).
FIGS. 3A and 3B are cross-sectional views of a semiconductor device showing an example of erroneous insertion of the heat sink, and FIG. 3A shows a cross-section of a mold for sealing the semiconductor device with resin. It is shown. FIG. 2B shows a cross section of the semiconductor device sealed with resin. 4A and 4B are cross-sectional views of a semiconductor device showing an example of misinsertion of other heat sinks, and FIG. 4A shows a mold for sealing the semiconductor device with resin. The cross section of is shown. FIG. 2B shows a cross section of the semiconductor device sealed with resin.
When inserting the heat sink 5 into the lower mold 8 during the resin sealing process of the semiconductor device of FIG. 2, the upper and lower distinction of the heat sink 5 is not surely recognized by the operator. Therefore, as shown to Fig.3 (a), the upper and lower sides of the heat sink 5 may be inserted accidentally. In this case, due to the positional deviation of the heat sink 5, the flow of the sealing resin 10 when filling the sealing resin 10 becomes non-uniform, and the moldability of the package such as the generation of voids is deteriorated. Furthermore, since the lower convex part 7 higher than the upper convex part 6 contacts the die pad 3, the distance between the heat radiating plate 5 and the die pad 3 becomes longer compared to the case where the upper convex part 6 contacts, and the thermal conductivity. A lot of bad resin intervenes. Further, as shown in FIGS. 4A and 4B, when the interval between the lower protrusions 7 is wide and the lower protrusions 7 do not contact the die pad 3, the heat conduction is further deteriorated. For this reason, there is a problem that the heat radiation effect as designed cannot be expected.
[0004]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, a first invention of the present invention comprises a semiconductor element, a die pad on which the semiconductor element is placed on the upper side, and a heat dissipation means disposed on the lower side of the die pad, In a semiconductor device in which these are sealed with a mold and molded into a predetermined shape, the following measures are taken.
That is, the heat radiating means is disposed on the heat radiating plate, the upper surface of the heat radiating plate, the M upper projections whose upper ends are in contact with the die pad, and the projection of the die pad on the lower surface of the heat radiating plate. And N (N ≧ 3) lower convex portions that are arranged within a range and are formed at the same height as the upper convex portion.
According to the first invention, since the semiconductor device is configured as described above, the height of the upper convex portion and the height of the lower convex portion are the same. Further, the lower convex portion is disposed within a projection range of the die pad on the lower surface of the heat radiating plate. For this reason, when the heat sink is inserted into the lower mold in the resin sealing process, even if the heat sink is inserted up and down by mistake, the heat sink is positioned as designed, and the lower protrusion comes into contact with the die pad.
[0005]
According to a second aspect of the present invention, the semiconductor device includes a semiconductor element, a die pad on which the semiconductor element is placed on the upper side, and a heat dissipating means disposed on the lower side of the die pad. The following measures are taken in the molded semiconductor device.
That is, the heat radiating means is equidistant and equidistant from the center into each range obtained by dividing the projection range of the square heat sink and the die pad on the upper surface of the heat sink into four equal parts with respect to the center of the projection range. And a plurality of upper projections whose upper ends are in contact with the die pad, and the projection range of the die pad on the lower surface of the heat sink is divided into four equal parts with respect to the center of the projection range. A plurality of lower protrusions are arranged in the range at positions adjacent to each other at equal distances from the center and formed at the same height as the upper protrusions.
According to the second aspect of the invention, the upper convex portion and the lower convex portion are adjacent to each range equally divided from the center at equal intervals in each range divided into four parts with reference to the center of the projection range of the die pad of the heat sink. Each is arranged. Furthermore, the upper and lower protrusions are formed at the same height. Therefore, when the heat sink is inserted into the lower mold in the resin sealing process, even if the operator inserts the heat sink in the wrong direction, the heat sink is positioned as designed, and the influence on the flow of the sealing resin is the same. . Therefore, the problem can be solved.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
First embodiment FIGS. 1A and 1B are structural views of a semiconductor device incorporating a heat dissipation means according to a first embodiment of the present invention. FIG. A cross section of the semiconductor device sealed with resin is shown, and FIG. 4B shows a side surface of the heat dissipating means in FIG.
As shown in FIG. 1A, this semiconductor device has a die 11 that is a semiconductor element. The die 11 is placed on a die pad 13 which is a part of the lead frame 12, and these are connected by, for example, a gold wire 14 or the like. And the heat sink 15 is located under the die pad 13. For example, a plurality of conical upper convex portions 16 and lower convex portions 17 disposed within the projection range of the die pad 13 are added to the upper and lower portions of the heat radiating plate 15 to constitute a heat radiating means. These are sealed with a sealing resin 20. In addition, the heat sink 15, the upper convex part 16, and the lower convex part 17 are manufactured with the material with good thermal conductivity, such as copper, for example.
Further, as shown in FIG. 1B, the height L1 of the upper convex portion 16 and the height L2 of the lower convex portion 17 are the same, and these are the upper convex portion 6 in the conventional FIG. 3A. Is the same as the height. The sum of the height L1 of the upper convex portion 16, the height L2 of the lower convex portion 17, and the thickness d of the heat sink 15 is equal to the distance between the lower surface of the die pad 13 and the lower surface of the semiconductor device. . The heat radiating plate 15 is formed in such a size that the lower convex portion 17 or the upper convex portion 16 is substantially in contact with the wall surface of the lower mold while being in contact with the bottom surface of the lower mold used in the resin sealing process of the semiconductor device. Has been.
[0007]
In the resin sealing process of this semiconductor device, when the operator correctly recognizes the top and bottom of the heat sink 15 and inserts it into the lower mold, the upper convex portion 16 contacts the die pad 13 and the lower convex portion 17 is the lower metal mold. Inserted in contact with the mold. On the other hand, since the height L1 of the upper convex portion 16 and the height L2 of the lower convex portion 17 are formed to be the same, the operator mistakenly recognizes the upper and lower sides of the heat sink 15 and inserted it into the lower mold However, it is inserted in a state where the upper convex portion 16 is in contact with the lower mold and the lower convex portion 17 is in contact with the die pad 13. Therefore, even if an operator mistakenly inserts the top and bottom of the heat sink 15, the heat sink 15 does not shift in position as designed, and the sealing resin 20 is filled when the sealing resin 20 is filled. Deterioration of moldability of the package such as generation of voids due to non-uniform flow can be prevented. Furthermore, even if the heat sink 15 is upside down, the distance between the heat sink 15 and the die pad 13 is the same as when the heat sink 15 is correctly inserted. Therefore, it is possible to prevent a state in which a large amount of resin having poor thermal conductivity shown in FIG. Further, even if the heat sink 15 is upside down, the lower projection 17 contacts the die pad 13, so the lower projection 7 shown in FIG. 4 (b) does not contact the die pad 3 and the heat conduction deteriorates. Can be prevented.
As described above, in the first embodiment, the height L1 of the upper convex portion 16 and the height L2 of the lower convex portion 17 are formed to be the same. When inserting the mold into the mold, even if it is inserted upside down, the heat radiating plate 15 is positioned as designed, and the deterioration of the moldability of the package and the decrease in the heat radiation efficiency can be prevented.
[0008]
Second embodiment Figs. 5A and 5B are structural views of a heat dissipating means showing a second embodiment of the present invention, and Fig. 1B showing the first embodiment. Elements common to the elements inside are given common reference numerals. FIG. 5A shows a side surface of the heat dissipation means, and FIG. 5B shows a plane of the heat dissipation means.
In this heat radiating means, the upper convex portion 16 has a range A obtained by dividing the projection range of the die pad 13 in FIG. 1A on the upper surface of the square heat radiating plate 15 into four equal parts with reference to the center c of the projection range. , B, C, and D are arranged at positions that are equidistant from the center c at equal intervals. Further, the lower convex portion 17 is equidistant from the center c into ranges A, B, C, and D obtained by dividing the projection range of the die pad 13 on the lower surface of the heat sink 15 into four equal parts with respect to the center c of the projection range. In addition, they are arranged at positions adjacent to each other at equal intervals. As shown in FIG. 5A, the height L1 of the upper convex portion 16 and the height L2 of the lower convex portion 17 are the same, and these are the upper convex portion 6 in the conventional FIG. 3A. Is the same as the height. The total of the height L1 of the upper convex portion 16, the height L2 of the lower convex portion 17, and the thickness d of the heat sink 15 is the lower surface of the die pad 13 and the lower surface of the semiconductor device in which the heat radiating means is sealed. Is equal to the distance. The heat radiating plate 15 has a square shape with a size such that the lower convex portion 17 or the upper convex portion 16 is in contact with the bottom surface of the lower mold used in the resin sealing process of the semiconductor device and substantially contacts the wall surface of the lower mold. Is formed.
[0009]
The upper convex portion 16 and the lower convex portion 17 have a great influence on the flow of the sealing resin in the resin sealing step, and determine the superiority or inferiority of the moldability of the package. Therefore, in the resin-encapsulated semiconductor device incorporating the heat dissipation means of FIG. 5, by arranging the upper convex portion 16 and the lower convex portion 17 in the same four directions with respect to the center c of the heat dissipation plate 15, No matter which direction the heat radiating plate 15 is inserted, the influence on the flow of the sealing resin in the resin sealing step is the same, and deterioration of the moldability of the package can be prevented.
As described above, in the second embodiment, the upper convex portion 16 and the lower convex portion 17 are arranged in the same direction in four directions with reference to the center c of the projection range of the die pad 13 of the heat radiating plate 15, and the height. Are formed in the same manner, the distinction of the insertion direction of the heat radiating plate 15 is eliminated, and the heat radiating plate is positioned as designed even if the operator inserts it in the wrong direction. Therefore, in addition to the advantages of the first embodiment, deterioration of the moldability of the package due to non-uniform flow of the sealing resin during resin sealing can be prevented no matter which direction the heat sink 15 is inserted.
[0010]
In addition, this invention is not limited to the said embodiment, A various deformation | transformation is possible. Examples of such modifications include the following.
(A) In each embodiment, although the shape of the upper convex part 16 and the lower convex part 17 was demonstrated as a cone shape, as long as the upper convex part 16 contacts the die pad 13, it is arbitrary shapes, such as a column shape, for example It's okay. Similarly, as long as the lower convex part 17 supports the heat sink 15, arbitrary shapes, such as a column shape, may be sufficient as it, for example.
(B) The upper convex portion 16 and the lower convex portion 17 in the second embodiment may be arranged in a circle at equal intervals within the projection range of the die pad 13.
[0011]
【The invention's effect】
As described above in detail, according to the first invention, since the height of the upper convex portion and the height of the lower convex portion are formed the same, when inserting the heat sink into the lower mold in the resin sealing step Even if the top and bottom are inserted by mistake, the heat radiating plate is positioned as designed, and the deterioration of the moldability of the package and the reduction of the heat radiation efficiency can be prevented.
According to the second invention, the upper convex portion and the lower convex portion are respectively divided into four equal parts with respect to the center of the projection range of the die pad of the heat radiating plate at positions adjacent to each other at equal distances from the center. Since it is arranged, there is no need to distinguish the insertion direction of the heat sink, and even if the operator inserts in the wrong direction, the heat sink is in the position as designed. Therefore, in addition to the effect of the first invention, it is possible to prevent deterioration of the moldability of the package due to non-uniform flow of the sealing resin during resin sealing, regardless of which direction the heat sink is inserted.
[Brief description of the drawings]
FIG. 1 is a structural diagram of a semiconductor device according to a first embodiment of the present invention.
FIG. 2 is a structure and manufacturing process diagram of a conventional resin-encapsulated semiconductor device.
FIG. 3 is a cross-sectional view of a semiconductor device showing an example of incorrect insertion of a heat sink up and down.
FIG. 4 is a cross-sectional view of a semiconductor device showing another example of incorrect heat sink upper and lower insertion.
FIG. 5 is a structural diagram of heat radiation means according to a second embodiment of the present invention.
[Explanation of symbols]
1,11 Die 3,13 Die pad 5,15 Heat sink (heat dissipation means)
6,16 Upper convex part (heat dissipation means)
7,17 Lower convex part (heat dissipation means)
10, 20 Sealing resin

Claims (2)

半導体素子と、上側に前記半導体素子を載置したダイパッドと、前記ダイパッドの下側に配置された放熱手段とを備え、これらが成形型によって樹脂封止されて所定の形状に成型された半導体装置において、
前記放熱手段は、
放熱板と、
前記放熱板の上面に配置され、上端が前記ダイパッドに接触するＭ個（Ｍ≧３）の上部凸部と、
前記放熱板の下面の前記ダイパッドの射影範囲内に配置され、かつ前記上部凸部と同一の高さに形成されたＮ個（Ｎ≧３）の下部凸部とを、
備えたことを特徴とする半導体装置。A semiconductor device comprising a semiconductor element, a die pad on which the semiconductor element is placed on the upper side, and a heat dissipating means disposed on the lower side of the die pad, which are resin-sealed by a molding die and molded into a predetermined shape In
The heat dissipation means is
A heat sink,
M (M ≧ 3) upper convex portions arranged on the upper surface of the heat radiating plate and having an upper end in contact with the die pad;
N lower projections (N ≧ 3) arranged in the projection range of the die pad on the lower surface of the heat sink and formed at the same height as the upper projections,
A semiconductor device comprising the semiconductor device. 半導体素子と、上側に前記半導体素子を載置したダイパッドと、前記ダイパッドの下側に配置された放熱手段とを備え、これらが成形型によって樹脂封止されて正方形状に成型された半導体装置において、
前記放熱手段は、
正方形状の放熱板と、
前記放熱板の上面の前記ダイパッドの射影範囲を該射影範囲の中心を基準にして４等分した各範囲に該中心から等距離かつ等間隔で隣り合う位置にそれぞれ配置され、かつ上端が前記ダイパッドに接触する複数の上部凸部と、
前記放熱板の下面の前記ダイパッドの射影範囲を該射影範囲の中心を基準にして４等分した各範囲に該中心から等距離かつ等間隔で隣り合う位置にそれぞれ配置され、かつ前記上部凸部と同一の高さに形成された複数の下部凸部とを、
備えたことを特徴とする半導体装置。In a semiconductor device comprising a semiconductor element, a die pad on which the semiconductor element is placed on the upper side, and a heat dissipating means arranged on the lower side of the die pad, which are resin-sealed by a molding die and molded into a square shape ,
The heat dissipation means is
A square heat sink,
The projection range of the die pad on the upper surface of the heat radiating plate is divided into four equal ranges with respect to the center of the projection range, and the upper end is disposed at a position adjacent to the center at equal distances and at equal intervals. A plurality of upper protrusions that contact the
The projections of the die pad on the lower surface of the heat radiating plate are respectively arranged at positions adjacent to each other at equal intervals and at equal intervals in the respective ranges obtained by dividing the projection range of the die pad into four parts with respect to the center of the projection range, and the upper convex portion A plurality of lower projections formed at the same height as
A semiconductor device comprising the semiconductor device.
JP4626297A 1997-02-28 1997-02-28 Semiconductor device Expired - Fee Related JP3630519B2 (en)

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JP3630519B2 true JP3630519B2 (en) 2005-03-16

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US9054077B2 (en) * 2010-03-10 2015-06-09 Altera Corporation Package having spaced apart heat sink

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