JPH10223681A - Method of depositing columnar plating in fine hole - Google Patents
Method of depositing columnar plating in fine holeInfo
- Publication number
- JPH10223681A JPH10223681A JP2405197A JP2405197A JPH10223681A JP H10223681 A JPH10223681 A JP H10223681A JP 2405197 A JP2405197 A JP 2405197A JP 2405197 A JP2405197 A JP 2405197A JP H10223681 A JPH10223681 A JP H10223681A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- stirring
- substrate
- fine holes
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、微細孔内にめっき
を柱状に析出させる方法に関し、特に微細孔を有する基
板の微細孔部にめっきをすることにより、柱状のバンプ
電極を形成することができるめっき方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for depositing plating in the form of columns in micropores, and more particularly to forming a columnar bump electrode by plating micropores on a substrate having micropores. It relates to a possible plating method.
【従来の技術】近年、電子機器の高機能化や小型軽量化
が、移動通信機器やコンピューターの需要増とともに一
層進められており、それにつれてマイクロエレクトロニ
クス技術の使命が大きくなってきている。半導体業界が
誕生して以来行なわれてきたLSIチップと外部回路と
を接続する方法としてワイヤーボンディング法がこれま
で使用されてきたが、LSIの高集積化が進み、高機能
化や大容量化に伴い、LSIの端子数の増加、電極の微
細化、配線の狭ピッチ化等によりワイヤーボンディング
方式では対応が困難になってきている。2. Description of the Related Art In recent years, higher performance and smaller size and lighter weight of electronic devices have been further promoted along with an increase in demand for mobile communication devices and computers, and accordingly, the mission of microelectronics technology has been increasing. Wire bonding has been used as a method of connecting LSI chips and external circuits, which has been performed since the birth of the semiconductor industry. However, as the integration of LSIs has progressed, higher functionality and higher capacity have been achieved. Accordingly, it has become difficult to cope with the wire bonding method due to an increase in the number of LSI terminals, miniaturization of electrodes, narrowing of wiring pitches, and the like.
【0002】このような状況の中、ワイヤーボンディン
グ方式に替わる電気的接続法としてバンプと呼ばれる突
起状電極を介してLSIチップと基板とを接続するフリ
ップチップ方式やTAB(Taped Automated Bonding )
方式が採用されるようになってきた。ここでバンプは、
電子回路基板の回路導体上に、即ち、微細孔を有する基
板の微細孔部に電気めっきにより形成されている。バン
プ形成を行う箇所は積層基板にコーティングしたレジス
ト上の微細孔部であるため、この孔に攪拌無しでめっき
を行った場合、めっき液が微細孔内に入らず、めっきが
析出しないので、通常は、バブリング等で攪拌しながら
電気めっきが行なわれている。ところが、液流等による
攪拌では効果が十分ではなく、めっきの厚みがレジスト
の高さ以上になるとエッヂ部でめっきが横方向にも成長
するためキノコ状のバンプが形成され、高密度化したパ
ターンでブリッヂが生じたりレジストの剥離が困難にな
るといった問題を生じる。Under such circumstances, as an electrical connection method replacing the wire bonding method, a flip chip method of connecting an LSI chip and a substrate via a bump-shaped electrode called a bump or TAB (Taped Automated Bonding).
The system has been adopted. Where the bumps are
It is formed by electroplating on a circuit conductor of an electronic circuit board, that is, in a fine hole portion of a substrate having fine holes. Since the place where the bump is formed is a fine hole on the resist coated on the laminated substrate, if plating is performed without stirring in this hole, the plating solution does not enter the fine hole and plating does not precipitate, so it is usually used. Is subjected to electroplating while stirring by bubbling or the like. However, stirring with a liquid flow or the like is not effective enough. When the plating thickness exceeds the height of the resist, the plating also grows in the edge portion in the lateral direction, so that mushroom-shaped bumps are formed, and the density of the pattern increases. This causes problems such as formation of bridges and difficulty in stripping the resist.
【問題点を解決するための手段】本発明は、微細孔を有
する基板の微細孔部にめっきをすることにより、柱状の
バンプ電極を形成することができるめっき方法を提供す
ることを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a plating method capable of forming a columnar bump electrode by plating a fine hole portion of a substrate having fine holes. .
【0003】[0003]
【課題を解決するための手段】本発明は、めっきを微細
孔内に施すにあたり、特定の周波数の超音波攪拌を採用
すると上記課題を解決できるとの知見に基づいてなされ
たのである。すなわち、本発明は、めっきを微細孔内に
施すにあたり、周波数が40KHz 〜1MHz の超音波攪拌
により被めっき物近傍の液を強力に揺動させながらめっ
きを行うことを特徴とする微細孔にめっきを柱状に析出
させる方法を提供する。Means for Solving the Problems The present invention has been made based on the finding that the above-mentioned problems can be solved by employing ultrasonic stirring at a specific frequency when plating is carried out in the fine holes. That is, according to the present invention, when plating is carried out in the fine hole, the plating is performed while vibrating the liquid near the object to be plated by ultrasonic stirring at a frequency of 40 kHz to 1 MHz. And a method for precipitating in a columnar form.
【0004】[0004]
【発明の実施の形態】本発明に使用するめっき浴として
は、微細孔を有する基板、および、レジストを侵さない
ものであれば特に制限はなく、金、ニッケル、Sn−Pb合
金、Sn−Ag、Sn−Bi、Sn−Zn合金等のPbフリーのハン
ダ、インジウム等を析出させるめっき浴のいずれもが使
用できる。具体的には、例えば、特開昭54−6953
4号公報、特開平7−138782号公報などに記載の
めっき浴を用いることができる。BEST MODE FOR CARRYING OUT THE INVENTION The plating bath used in the present invention is not particularly limited as long as it does not attack a substrate having fine pores and a resist. Gold, nickel, Sn-Pb alloy, Sn-Ag Any plating bath for depositing Pb-free solder such as Sn-Bi, Sn-Zn alloy or the like, indium or the like can be used. Specifically, for example, Japanese Patent Application Laid-Open No. 54-6953
No. 4, JP-A-7-138782 and the like can be used.
【0005】本発明でめっきの対象となる微細孔を有す
る基板としては、アルミド、アルミナ、ガラスなどの基
板上に銅、ニッケル、クロムなどの金属の皮膜を有する
基板に、例えば50〜200μ程度の大きさの微細孔を
有するものがあげられる。基板の厚みに任意でよいが、
好ましくは0.5〜1mm程度である。又、金属の皮膜は、
好ましくは1〜50μm程度である。本発明において、
より好ましくは、上記基板の上にレジストを施したもの
があげられる。ここで、レジストとしては、例えば、特
公平5−8203号公報、特開平7−76565号公報
などに記載のものがあげられる。レジストは、常法によ
り基板上に施すことができ、レジストの厚みは好ましく
は0.02〜1mm程度である。ここで、レジスト中の微細
孔は、基板や金属皮膜にまで貫通しているのがよい。The substrate having micropores to be plated in the present invention includes, for example, a substrate having a coating of a metal such as copper, nickel, and chromium on a substrate of aluminum, alumina, glass, or the like. One having fine pores of a size is exemplified. The thickness of the substrate may be arbitrary,
Preferably, it is about 0.5 to 1 mm. The metal film is
Preferably it is about 1 to 50 μm. In the present invention,
More preferably, a substrate obtained by applying a resist on the above substrate is used. Here, examples of the resist include those described in JP-B-5-8203, JP-A-7-76565, and the like. The resist can be applied on the substrate by a conventional method, and the thickness of the resist is preferably about 0.02 to 1 mm. Here, the fine holes in the resist preferably penetrate to the substrate and the metal film.
【0006】本発明では、上記基板を陰極とし、白金ま
たはめっきと同組成の金属を陽極として、例えば、15
〜60℃で30〜500分間電気めっきして、上記基板
にある微細孔内にめっきを柱状に析出させる。ここで、
本発明では、めっき液の攪拌に用いる超音波の設定条件
を周波数40KHz 〜1MHz (好ましくは100〜500
KHz )にすることを特徴とする。攪拌を周波数40KHz
〜1MHz の超音波で行うことにより、微細孔内にめっき
液が均一に拡散し、めっきがレジストの高さ以上になっ
た場合も横に広がらずストレート状に成長することを特
徴とするものである。周波数が40KHz より低い場合、
キャビテーション現象で発生する泡が微細孔の寸法に対
して大きく、孔内にまで十分な攪拌効果が得られない。
また定在数の間隔も長いため均一な攪拌ができない。一
方、周波数が1MHz を越える場合、攪拌効果が弱くな
る。なお、超音波には定在数がある為40KHz 〜1MHz
の間でもめっき品を揺動するのが好ましい。上記超音波
による波の揺動は、カソードロッカーを用いることによ
り容易に行うことができる。本発明では、上記めっきを
直流電流を用い、電流密度0.1〜5A/dm2 で、30〜
500分程度行うのがよい。しかしながら、本発明で
は、無電解によっても、上記特徴ある攪拌により、微細
孔にめっきを柱状に析出させることができる。このよう
な無電解に用いることができるめっき浴としては、例え
ば、特開平5−295556号公報、特開平6−332
55号公報などに記載のものがあげられる。In the present invention, the above-mentioned substrate is used as a cathode, and platinum or a metal having the same composition as plating is used as an anode.
Electroplating is performed at 6060 ° C. for 30 to 500 minutes to deposit the plating in a columnar shape in the fine holes in the substrate. here,
In the present invention, the setting conditions of the ultrasonic wave used for stirring the plating solution are set to a frequency of 40 KHz to 1 MHz (preferably 100 to 500 MHz).
KHz). Stirring frequency 40KHz
By using ultrasonic waves of ~ 1MHz, the plating solution is diffused uniformly in the micropores, and even if the plating exceeds the height of the resist, it does not spread horizontally and grows straight. is there. If the frequency is lower than 40KHz,
The bubbles generated by the cavitation phenomenon are large with respect to the size of the micropores, and a sufficient stirring effect cannot be obtained even in the pores.
In addition, uniform agitation cannot be performed because the interval between the standing numbers is long. On the other hand, when the frequency exceeds 1 MHz, the stirring effect is weakened. In addition, since the ultrasonic wave has a standing number, 40 KHz to 1 MHz
It is preferable to swing the plated product even during the period. The swing of the wave by the ultrasonic wave can be easily performed by using a cathode rocker. In the present invention, the plating is carried out using a direct current at a current density of 0.1 to 5 A / dm 2 and a current of 30 to 30 A / dm 2 .
It is good to perform for about 500 minutes. However, in the present invention, the plating can be deposited in the fine pores in a columnar shape by the above-described characteristic stirring even by electroless. Examples of such a plating bath that can be used for electroless are, for example, JP-A-5-295556 and JP-A-6-332.
No. 55 and the like.
【0007】次に本発明を添付の図面を参照して説明す
る。本発明のめっき方法によると図1に示されるよう
に、基体1上に設けられた銅膜下地2の上のレジスト3
の微細孔内に、柱状のめっき4、つまりバンプ電極が形
成されるが、本発明の特徴を有しない比較例の方法によ
ると、図2に示されるように、きのこ状のめっき5が形
成される。Next, the present invention will be described with reference to the accompanying drawings. According to the plating method of the present invention, as shown in FIG. 1, a resist 3 on a copper film base 2 provided on a substrate 1
A columnar plating 4, that is, a bump electrode is formed in the micropores, but according to the method of the comparative example having no feature of the present invention, as shown in FIG. 2, a mushroom-shaped plating 5 is formed. You.
【0008】[0008]
【発明の効果】本発明の方法により、簡易に、微細孔を
有する基板の微細孔部にキノコ状とかマッシュルーム状
の突起状ではなく柱状、即ちストレートなバンプが形成
できる。次に本発明を実施例により説明する。According to the method of the present invention, a columnar, that is, a straight bump, rather than a mushroom-like or mushroom-like projection can be easily formed in a fine hole portion of a substrate having fine holes. Next, the present invention will be described with reference to examples.
【0009】[0009]
実施例1 エポキシ系のレジストでコーティング(膜厚50μm)
されたアラミド基材積層基板(下地銅)であって、微細
孔を多数有する基板を陰極とし、錫−鉛合金を陽極とし
て、下記の錫−鉛合金めっき浴に浸漬し、25℃の温度
で超音波攪拌(100KHz)を行いながら、1.0A/dm2
の電流密度で200分間めっきを行いSn/Pb=75/2
5のストレートバンプめっきを100μm得た。錫−鉛合金めっき浴組成 硫酸第一錫 32g/l 酸化鉛 20 〃 グルコン酸ソーダ 120 〃 EDTA−2Na 70 〃 添加剤 10ml/l(ディップソール(株)製W-1110S) 水 残部 pH 6.0(アンモニア水でpH調整を行った)Example 1 Coating with an epoxy-based resist (film thickness 50 μm)
Immersed in a tin-lead alloy plating bath described below using a substrate having a large number of micropores as a cathode and a tin-lead alloy as an anode at a temperature of 25 ° C. 1.0 A / dm 2 while performing ultrasonic stirring (100 KHz)
Plating for 200 minutes at a current density of Sn / Pb = 75/2
The straight bump plating No. 5 of 100 μm was obtained. Tin-lead alloy plating bath composition stannous sulfate 32 g / l lead oxide 20 {sodium gluconate 120} EDTA-2Na 70} additive 10 ml / l (W-1110S manufactured by Dipsol) water balance pH 6.0 (PH adjusted with ammonia water)
【0010】実施例2 下記の錫−鉛合金めっき浴を用い、25℃の温度で超音
波攪拌(400KHz)を行いながら2.0A/dm2 の電流密
度で100分間めっきを行った以外は実施例1と同様に
してめっきを行い、Sn/Pb=50/50のストレートバ
ンプめっきを100μm得た。錫−鉛合金めっき浴組成 硫酸第一錫 56g/l 酸化鉛 10 〃 グルコノδ−ラクトン 120 〃 DTPA 70 〃 添加剤 10ml/l(ディップソール(株)製W-1110S) 水 残部 pH 6.0(アンモニア水でpH調整を行った)Example 2 The procedure was performed except that plating was performed at a current density of 2.0 A / dm 2 for 100 minutes while performing ultrasonic stirring (400 KHz) at a temperature of 25 ° C. using the following tin-lead alloy plating bath. Plating was performed in the same manner as in Example 1 to obtain 100 μm of straight bump plating of Sn / Pb = 50/50. Tin-lead alloy plating bath composition stannous sulfate 56 g / l lead oxide 10 グ ル コ glucono δ-lactone 120 〃 DTPA 70 添加 additive 10 ml / l (W-1110S, manufactured by Dipsol Corporation) Water balance pH 6.0 ( PH was adjusted with ammonia water)
【0011】実施例3 下記の錫−蒼鉛合金めっき浴を用い、25℃の温度で超
音波攪拌(400KHz)を行いながら1.0A/dm2 の電流
密度で200分間めっきを行った以外は実施例1と同様
にしてめっきを行い、Sn/Bi=95/5のストレートバ
ンプめっき(100μm)を得た 錫−蒼鉛合金めっき浴組成 酸化第一錫 30g/l 酸化ビスマス 2 〃 メタンスルホン酸 75 〃 グルコノラクトン 150 〃 EDTA 60 〃 添加剤 20ml/l(ディップソール(株)製IE0428S) 水 残部 pH 4.0(アンモニア水でpH調整を行った)Example 3 The following procedure was carried out except that plating was carried out at a current density of 1.0 A / dm 2 for 200 minutes while performing ultrasonic stirring (400 KHz) at a temperature of 25 ° C. using the following tin-lead alloy plating bath. Plating was performed in the same manner as in Example 1 to obtain a straight bump plating (100 μm) of Sn / Bi = 95/5. Tin-lead alloy plating bath composition Stannous oxide 30 g / l bismuth oxide 2 {methanesulfonic acid 75} Gluconolactone 150 EDTA 60 Additive 20 ml / l (IE0428S manufactured by Dipsol Co.) Water Balance pH 4.0 (pH adjusted with ammonia water)
【0012】実施例4 下記の錫−銀合金めっき浴を用い、20℃で超音波攪拌
(100KHz)を行いながら2.5A/dm2 の電流密度で6
0分間めっきを行った以外は実施例1と同様にしてめっ
きを行い、Sn/Ag=97/3のストレートバンプめっき
(75μm)を得た。錫−銀合金めっき浴組成 酸化第一錫 30g/l 酸化銀 1.2 〃 メタンスルホン酸 150 〃 水 残部 添加剤 60ml/l(ディップソール(株)製IF0729S)Example 4 The following tin-silver alloy plating bath was used at a current density of 2.5 A / dm 2 while ultrasonically stirring (100 KHz) at 20 ° C.
Plating was performed in the same manner as in Example 1 except that plating was performed for 0 minutes, to obtain straight bump plating (75 μm) of Sn / Ag = 97/3. Tin-silver alloy plating bath composition stannous oxide 30 g / l silver oxide 1.2 メ タ ン methanesulfonic acid 150 〃 water balance additive 60 ml / l (IF0729S manufactured by Dipsol Co., Ltd.)
【0013】実施例5 下記の錫−亜鉛合金めっき浴を用い、25℃の温度で超
音波攪拌(100KHz)を行いながら2.0A/dm2 の電流
密度で100分間めっきを行った以外は実施例1と同様
にしてめっきを行い、Sn/Zn=90/10のストレート
バンプめっきを100μm得た。錫−亜鉛合金めっき浴組成 硫酸第一錫 36g/l 硫酸亜鉛 35 〃 クエン酸アンモニウム 100 〃 硫酸アンモニウム 100 〃 添加剤 8ml/l(ゼラチン) 水 残部 pH 6.0(アンモニア水でpH調整を行った)Example 5 The procedure was performed except that plating was performed at a current density of 2.0 A / dm 2 for 100 minutes using a tin-zinc alloy plating bath at a temperature of 25 ° C. while performing ultrasonic stirring (100 KHz). Plating was performed in the same manner as in Example 1 to obtain 100 μm of straight bump plating of Sn / Zn = 90/10. Tin-zinc alloy plating bath composition stannous sulfate 36g / l zinc sulfate 35 {ammonium citrate 100} ammonium sulfate 100} additive 8ml / l (gelatin) water balance pH 6.0 (pH adjusted with ammonia water)
【0014】実施例6 下記の金めっき浴を用い、40℃の温度で超音波攪拌
(400KHz)を行いながらコーティング(膜厚5μm)
積層基板上に0.5A/dm2 の電流密度で40分間めっき
を行った以外は実施例1と同様にしてめっきを行い、1
0μmのストレートバンプめっきを得た。金めっき浴組成 シアン化金カリウム 10g/l リン酸二水素カリウム 96 〃 クエン酸 24 〃 EDTA−コバルトカリウム 2 〃 リン酸水素二カリウム 80 〃 水 残部 pH 4.5 〃Example 6 Using the following gold plating bath, coating was performed at a temperature of 40 ° C. while performing ultrasonic stirring (400 KHz) (film thickness: 5 μm).
Plating was performed in the same manner as in Example 1 except that plating was performed on the laminated substrate at a current density of 0.5 A / dm 2 for 40 minutes.
0 μm straight bump plating was obtained. Gold plating bath composition Potassium gold cyanide 10 g / l Potassium dihydrogen phosphate 96 〃 Citric acid 24 カ リ ウ ム EDTA-cobalt potassium 2 二 Dipotassium hydrogen phosphate 80 〃 Water balance pH 4.5 〃
【0015】実施例7 下記の無電解Ni−Pめっき浴を用い、温度90℃で超音
波攪拌(100KHz)しながら5時間めっきを行い、実施
例1と同様の基板上にNi−Pのストレートバンプめっき
(100μm)を得た。無電解Ni−Pめっき浴組成 硫酸ニッケル 20g/l 次亜リン酸ナトリウム 24 〃 乳酸 27 〃 プロピオン酸 2 〃 水 残部 pH 4.5(NaOH水溶液でpH調整を行った)Example 7 Using the following electroless Ni-P plating bath, plating was performed for 5 hours at a temperature of 90 ° C. with ultrasonic stirring (100 KHz), and a Ni-P straight plate was formed on the same substrate as in Example 1. Bump plating (100 μm) was obtained. Electroless Ni-P plating bath composition Nickel sulfate 20 g / l Sodium hypophosphite 24 乳酸 Lactic acid 27 2 Propionic acid 2 〃 Water Remaining pH 4.5 (pH adjusted with NaOH aqueous solution)
【0016】実施例8 下記の無電解Ni−Bめっき浴を用い、温度65℃で超音
波攪拌(1MHz)を行いながら、 コーティング(膜
厚5μm)ガラス基板上に、2時間でNi−Bのストレー
トバンプめっきを10μmを得た。無電解Ni−Bめっき浴組成 硫酸ニッケル 20g/l DMAB 2 〃 グリシン 3 〃 酢酸アンモン 6 〃 水 残部 pH 6.5(NaOH水溶液でpH調整を行った)Example 8 Using the following electroless Ni-B plating bath, Ni-B was coated on a coated (5 μm-thick) glass substrate for 2 hours while performing ultrasonic stirring (1 MHz) at a temperature of 65 ° C. 10 μm of straight bump plating was obtained. Electroless Ni-B plating bath composition nickel sulfate 20 g / l DMAB 2 グ リ glycine 3 ア ン ammonium acetate 6 〃 water balance pH 6.5 (pH adjusted with NaOH aqueous solution)
【0017】比較例1 下記の錫−鉛合金めっき浴を用い、温度25℃で液流攪
拌を行いながら、電流密度1.0A/dm2 で200分間め
っきを行った以外は実施例1と同様にしてめっきをおこ
なったところ、積層基板上にキノコ状のバンプめっきが
形成された。又液流の当たる箇所とその付近とのめっき
の膜厚にバラツキがでた。錫−鉛合金めっき浴組成 硫酸第一錫 56g/l 酸化鉛 10 〃 グルコノラクトン 120 〃 DTPA 40 〃 添加剤 10ml/l(ディップソール(株)製W-1110S) 水 残部 pH 6.0(アンモニア水でpH調整を行った)Comparative Example 1 Same as Example 1 except that plating was performed at a current density of 1.0 A / dm 2 for 200 minutes while stirring the liquid at a temperature of 25 ° C. using the following tin-lead alloy plating bath. As a result, mushroom-shaped bump plating was formed on the laminated substrate. In addition, there was variation in the plating film thickness between the location where the liquid flow hits and the vicinity thereof. Tin-lead alloy plating bath composition stannous sulfate 56 g / l lead oxide 10 〃 gluconolactone 120 〃 DTPA 40 添加 additive 10 ml / l (W-1110S manufactured by Dipsol Co.) Water balance pH 6.0 (ammonia PH was adjusted with water)
【0018】比較例2 比較例1と同じ錫−鉛合金めっき浴を用い、温度25℃
で攪拌を行わずに、電流密度1.0A/dm2 でめっきを行
った以外は実施例1と同様にしてめっきをおこなったと
ころ、微細孔内部に水素が発生し、コーティングレジス
トが剥離したが、めっきはほとんど析出しなかった。 比較例3 錫−亜鉛合金めっき 下記の錫−亜鉛合金めっき浴を用い、温度25℃で攪拌
をカソードロッカーによる攪拌を行いながら、電流密度
2.0A/dm2 でめっきを行った以外は実施例1と同様に
してめっきをおこなったところ、10分ほどで微細孔内
部に水素が発生しめっきが析出しなくなった。Comparative Example 2 The same tin-lead alloy plating bath as in Comparative Example 1 was used at a temperature of 25 ° C.
When plating was performed in the same manner as in Example 1 except that plating was performed at a current density of 1.0 A / dm 2 without stirring, hydrogen was generated inside the fine holes, and the coating resist was peeled off. The plating was hardly deposited. Comparative Example 3 Tin-zinc alloy plating Using the following tin-zinc alloy plating bath, current density was measured while stirring at a temperature of 25 ° C using a cathode rocker.
When plating was performed in the same manner as in Example 1 except that plating was performed at 2.0 A / dm 2 , hydrogen was generated inside the fine holes in about 10 minutes, and the plating was not deposited.
【0019】錫−亜鉛合金めっき浴組成 硫酸第一錫 36g/l 硫酸亜鉛 35 〃 クエン酸アンモニウム 100 〃 硫酸アンモニウム 100 〃 添加剤 8ml/l(ゼラチン) 水 残部 pH 6.0(アンモニア水でpH調整を行った) 比較例4 実施例8と同じ無電解Ni−Bめっき浴を用い、温度65
℃で揺動攪拌を行いながら、実施例8と同じコーティン
グ(膜厚5μm)ガラス基板上に、2時間でめっきを行
ったところ、めっき形状はキノコ状の突起物であった。 Tin-zinc alloy plating bath composition stannous sulfate 36 g / l zinc sulfate 35 {ammonium citrate 100} ammonium sulfate 100 # additive 8 ml / l (gelatin) water balance pH 6.0 (pH adjustment with ammonia water) Comparative Example 4 The same electroless Ni-B plating bath as in Example 8 was used at a temperature of 65
When plating was performed for 2 hours on a glass substrate having the same coating (thickness: 5 μm) as in Example 8 while performing rocking stirring at 0 ° C., the plating shape was mushroom-shaped projections.
Claims (2)
数が40KHz 〜1MHz の超音波攪拌により被めっき物近
傍の液を強力に揺動させながらめっきを行うことを特徴
とする微細孔にめっきを柱状に析出させる方法。When plating is performed in a fine hole, plating is carried out while vibrating a liquid near an object to be plated by ultrasonic stirring at a frequency of 40 KHz to 1 MHz. A method of depositing in columnar form.
バンプ電極を形成する請求項1記載の方法。2. The method according to claim 1, wherein a columnar bump electrode is formed in the fine hole of the substrate having the fine hole.
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JP2009520351A (en) * | 2005-12-14 | 2009-05-21 | マクダーミッド インコーポレーテッド | How to use ultrasonic waves for silver plating |
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JP2009520351A (en) * | 2005-12-14 | 2009-05-21 | マクダーミッド インコーポレーテッド | How to use ultrasonic waves for silver plating |
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