JPH10223485A - Aluminum foil for electrolytic-capacitor electrode - Google Patents

Aluminum foil for electrolytic-capacitor electrode

Info

Publication number
JPH10223485A
JPH10223485A JP2467097A JP2467097A JPH10223485A JP H10223485 A JPH10223485 A JP H10223485A JP 2467097 A JP2467097 A JP 2467097A JP 2467097 A JP2467097 A JP 2467097A JP H10223485 A JPH10223485 A JP H10223485A
Authority
JP
Japan
Prior art keywords
ppm
content
foil
aluminum
50ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2467097A
Other languages
Japanese (ja)
Other versions
JP3590228B2 (en
Inventor
Tomoaki Yamanoi
智明 山ノ井
Kimitoku Sugimoto
公徳 杉本
Ichizo Tsukuda
市三 佃
Tadao Fujihira
忠雄 藤平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Aluminum Can Corp
Original Assignee
Showa Aluminum Corp
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Filing date
Publication date
Application filed by Showa Aluminum Corp filed Critical Showa Aluminum Corp
Priority to JP02467097A priority Critical patent/JP3590228B2/en
Publication of JPH10223485A publication Critical patent/JPH10223485A/en
Application granted granted Critical
Publication of JP3590228B2 publication Critical patent/JP3590228B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To restrain crystal particles from becoming coarse and large after their heating by a method wherein Cu and Sb in a definite ratio coexist in an aluminum foil alloy of specific purity. SOLUTION: Regarding a foil alloy composition, the purity of aluminum is at 99.9% or higher, 30 to 100ppm of Cu and 5 to 100ppm of Sb are contained, and a Cu content Ccu (in ppm) and an Sb content Csb (in ppm) satisfy a relationship of 10 Ccu+7Csb<=1350. In addition to Cu and Sb in the ranges which are used as fundamentally contained elements, one kind or two kinds out of 0.1 to 5ppm or Pb, 1 to 50ppm of Ga and 1 to 50ppm of Zn are contained, or one kind or two kinds out of 0.1 to 50ppm of Pb, 1 to 50ppm of Ga and 1 to 50ppm of Zn are contained. Thereby, it is possible to restrain coarse and large crystals from growing after their heating treatment.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、電解コンデンサ
電極用アルミニウム箔に関する。
The present invention relates to an aluminum foil for an electrode of an electrolytic capacitor.

【0002】なお、この明細書において、ppm の単位は
重量を示すものである。
[0002] In this specification, the unit of ppm indicates weight.

【0003】[0003]

【従来の技術】アルミニウム電解コンデンサ用電極材と
して一般に用いられるアルミニウム箔には、その実効面
積を拡大して単位面積当たりの静電容量を増大するた
め、通常、電気化学的あるいは化学的エッチング処理が
施される。
2. Description of the Related Art An aluminum foil generally used as an electrode material for an aluminum electrolytic capacitor is usually subjected to an electrochemical or chemical etching treatment in order to increase its effective area and increase the capacitance per unit area. Will be applied.

【0004】高圧用と呼ばれるトンネル型エッチングが
施されるタイプの陽極箔においては、箔面に対して垂直
方向の結晶方位が(100)方位を有する立方体集合組
織を優先的に成長させることにより効果的に静電容量増
大を図りうることが既に知られている。そして、前記結
晶における立方体方位占有率を高めるために、焼鈍条件
や箔の表面粗度についての種々の提案がなされている
(特開昭47−9953号、特開昭62−228456
号等)。また、一方で箔材料の合金組成により前記立方
体方位占有率を高めることも種々提案され、箔材料とし
て微量のSbを添加したアルミニウム合金の使用が提案
されている。(特開昭50−104710号、特公昭5
9−12736号、特開平7−150280号等)。
In an anode foil of the type subjected to tunnel type etching called for high pressure, the effect is obtained by preferentially growing a cubic texture having a (100) crystal orientation perpendicular to the foil surface. It is already known that the capacitance can be increased in practice. Various proposals have been made on annealing conditions and foil surface roughness in order to increase the cubic orientation occupancy of the crystal (Japanese Patent Application Laid-Open Nos. 47-9953 and 62-228456).
No.). On the other hand, various proposals have been made to increase the cubic orientation occupancy by the alloy composition of the foil material, and the use of an aluminum alloy to which a small amount of Sb has been added as the foil material has been proposed. (Japanese Unexamined Patent Publication No. 50-104710,
No. 9-12736 and JP-A-7-150280).

【0005】[0005]

【発明が解決しようとする課題】しかしながら、前記合
金組成の箔材料を用いても、最終焼鈍温度を上げると結
晶粒が粗大化して静電容量を低下させるという問題点が
あった。
However, even when a foil material having the above-mentioned alloy composition is used, there is a problem that when the final annealing temperature is increased, the crystal grains become coarse and the capacitance is reduced.

【0006】さらに、低圧用と呼ばれるスポンジ型エッ
チングが施されるタイプの陽極箔においては、最終乾燥
工程における加熱処理で結晶粒が粗大成長するとエッチ
ド箔の強度が著しく低下して箔が破断するという問題点
もあった。
Further, in the anode foil of the type subjected to sponge type etching called for low pressure, if the crystal grains grow coarse in the heat treatment in the final drying step, the strength of the etched foil is remarkably reduced and the foil is broken. There were also problems.

【0007】この発明は、かかる技術的背景に鑑みてな
されたものであって、加熱処理による結晶粒の粗大化を
抑止し、ひいては静電容量を増大するとともに箔強度を
維持し得る電解コンデンサ電極用アルミニウム箔の提供
を目的とする。
The present invention has been made in view of such technical background, and has been made in consideration of the above technical background, and is capable of suppressing the crystal grains from being coarsened by the heat treatment, thereby increasing the capacitance and maintaining the foil strength. The purpose is to provide aluminum foil for use.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、発明者らは鋭意研究の結果、一定の割合でCuとS
bとが共存することで、加熱後の結晶粒の粗大化を抑止
できることを見出だした。
Means for Solving the Problems In order to achieve the above object, the present inventors have conducted intensive studies and as a result, have found that Cu and S
It has been found that the coexistence of b can suppress the coarsening of the crystal grains after heating.

【0009】この発明の電解コンデンサ電極用アルミニ
ウム箔は、かかる知見に基づいてなされたものであっ
て、箔合金組成において、アルミニウム純度が99.9
%以上であるとともに、Cu:30ppm を超え100pp
m 以下およびSb:5〜100ppm を含有し、かつCu
含有量CCu(ppm) およびSb含有量CSb(ppm) が10C
Cu+7CSb≦1350なる関係を満たしていることを基
本要旨とする。
The aluminum foil for an electrode of an electrolytic capacitor of the present invention has been made based on such knowledge, and has an aluminum purity of 99.9 in the foil alloy composition.
% Or more and Cu: more than 30 ppm and 100 pp
m or less and Sb: 5 to 100 ppm, and Cu
Content C Cu (ppm) and Sb content C Sb (ppm) are 10C
The basic point is that the relationship of Cu + 7C Sb ≦ 1350 is satisfied.

【0010】さらに、この発明の電解コンデンサ電極用
アルミニウム箔は、前記範囲のCuおよびSbを基本含
有元素として、これらの基本含有元素の他にさらにP
b:0.1〜5ppm を含有するもの、これらの基本含有
元素の他にGa:1〜50ppmまたはZn:1〜50ppm
のうちの1種または2種を含有するもの、これらの基
本含有元素にPb:0.1〜5ppm と、Ga:1〜50
ppm またはZn:1〜50ppm のうちの1種または2種
とを含有するものである。
Further, the aluminum foil for an electrode of an electrolytic capacitor according to the present invention is characterized in that Cu and Sb in the above-mentioned range are used as basic elements, and P
b: containing 0.1 to 5 ppm, and in addition to these basic elements, Ga: 1 to 50 ppm or Zn: 1 to 50 ppm
Containing one or two of the above, Pb: 0.1 to 5 ppm, and Ga: 1 to 50
ppm or Zn: one or two of 1 to 50 ppm.

【0011】この発明に係る電解コンデンサ電極用アル
ミニウム箔の合金組成において、アルミニウム純度に9
9.9%以上を必要とするのは、99.9%未満の純度
では、エッチング時にエッチングピットの成長が多くの
不純物の存在によって阻害され、本発明の微量添加元素
によってもなお均一な深いトンネル状のエッチングピッ
トを形成できず、従って静電容量の高いアルミニウム箔
を得ることができないからである。好ましくはアルミニ
ウム純度を99.95%以上とするのが良い。
[0011] In the alloy composition of the aluminum foil for an electrolytic capacitor electrode according to the present invention, the aluminum purity is 9%.
The requirement of 9.9% or more is that at a purity of less than 99.9%, the growth of etching pits is hindered by the presence of many impurities at the time of etching, and even with the trace addition element of the present invention, a uniform deep tunnel is obtained. This is because it is not possible to form an etching pit in the shape of a circle, and therefore it is not possible to obtain an aluminum foil having a high capacitance. Preferably, the aluminum purity is 99.95% or more.

【0012】また、基本含有元素であるCuおよびSb
は、それぞれ単独でエッチング特性を向上させる他、共
存することにより加熱後の再結晶粒の成長速度を抑えて
結晶粒の粗大化を抑える効果があり、静電容量の増大お
よび箔強度の維持に寄与する。即ち、Cuは、Alマト
リックス中に固溶することにより箔の溶解性を増してエ
ッチングピットの成長を促進し、静電容量を増大させ
る。Cu含有量CCuが30ppm 以下ではこのような効果
に乏しく、100ppm を超えると局部溶解が強まって、
エッチングピットの均一分布を妨げ、ひいては静電容量
を低下させる。また、Sbは、エッチングピットを高密
度かつ均一に分布させることにより静電容量を増大させ
る。Sb含有量CSbが5ppm 未満ではこのような効果に
乏しく、100ppm を超えると著しい表面溶解が起こ
り、高静電容量箔を得ることができない。さらに、Cu
およびSbの共存により上記効果に加えて焼鈍後の結晶
粒の粗大化が抑制されて静電容量を増大させることがで
きる。しかし、Cu含有量CCu(ppm) およびSb含有量
Sb(ppm) が共に多くなれば、結晶粒の粗大化を阻止す
る効 果は大きくなるが、その一方で箔が過剰に溶解さ
れ、粗大粒の発生抑制効果を上回るエッチング特性の低
下が生じて静電容量は低下する。そのため、この発明に
おいては、CuおよびSbの両者が多量に含有される場
合を除外するものとし、Cu含有量CCu(ppm) およびS
b含有量CSb(ppm) がそれぞれ上記範囲内であって、か
つ10CCu+7CSb≦1350なる関係を満たしている
ことが必要である。
Further, the basic elements Cu and Sb
Has the effect of suppressing the growth of recrystallized grains after heating and the coarsening of crystal grains by coexistence, in addition to improving the etching characteristics independently, increasing the capacitance and maintaining the foil strength. Contribute. That is, Cu dissolves in the Al matrix to increase the solubility of the foil, promote the growth of etching pits, and increase the capacitance. When the Cu content C Cu is 30 ppm or less, such an effect is poor. When the Cu content exceeds 100 ppm, local dissolution increases,
The uniform distribution of the etching pits is prevented, and the capacitance is reduced. Further, Sb increases the capacitance by distributing the etching pits densely and uniformly. When the Sb content C Sb is less than 5 ppm, such effects are poor. When the Sb content exceeds 100 ppm, remarkable surface melting occurs, and a high capacitance foil cannot be obtained. Further, Cu
Due to the coexistence of Sb and Sb, in addition to the above effects, the coarsening of the crystal grains after annealing is suppressed, and the capacitance can be increased. However, when the Cu content C Cu (ppm) and the Sb content C Sb (ppm) both increase, the effect of preventing the coarsening of the crystal grains increases, but on the other hand, the foil is excessively dissolved, The etching characteristics are reduced more than the effect of suppressing the generation of coarse particles, and the capacitance is reduced. Therefore, in the present invention, the case where both Cu and Sb are contained in large amounts is excluded, and the Cu content C Cu (ppm) and S
It is necessary that the b content C Sb (ppm) is within the above range, and that the relationship of 10C Cu + 7C Sb ≦ 1350 is satisfied.

【0013】従って、本発明におけるCu含有量CCu(p
pm) およびSb含有量CSb(ppm) は、図1に示す範囲内
となる。また、特に好ましいCu含有量CCuの下限値は
35ppm 、上限値は70ppm である。特に好ましいSb
含有量CSbの下限値は5ppm、上限値は70ppm であ
る。
Accordingly, the Cu content C Cu (p
pm) and the Sb content C Sb (ppm) fall within the ranges shown in FIG. The lower limit of the particularly preferred Cu content C Cu is 35 ppm, and the upper limit is 70 ppm. Particularly preferred Sb
The lower limit of the content C Sb is 5 ppm, and the upper limit is 70 ppm.

【0014】さらに、この発明の電解コンデンサ電極用
アルミニウム箔では、箔合金組成において、前記基本含
有元素の他に、Pb、Ga、Znを添加することによ
り、さらにエッチング特性を向上させて静電容量の増大
を図ることができる。
Further, in the aluminum foil for an electrode of an electrolytic capacitor of the present invention, by adding Pb, Ga, and Zn to the foil alloy composition in addition to the above-mentioned basic contained elements, the etching characteristics are further improved so that the capacitance is improved. Can be increased.

【0015】Pbは、箔表面の溶解性を増すことにより
エッチング初期におけるエッチングピットの局部溶解を
抑制する効果があり、エッチングピットの均一分布を図
ることができる。このようなPbの含有量は、0.1pp
m 未満では前記効果に乏しく、5ppm を超えると過溶解
が生じるため、0.1〜5ppm の範囲とする必要があ
る。特に好ましいPb含有量の下限値は0.3ppm であ
り、上限値は2ppm である。
Pb has the effect of suppressing the local dissolution of etching pits at the beginning of etching by increasing the solubility of the foil surface, and can achieve a uniform distribution of etching pits. The content of such Pb is 0.1 pp
If it is less than m, the above effect is poor, and if it exceeds 5 ppm, excessive dissolution occurs, so it is necessary to be in the range of 0.1 to 5 ppm. A particularly preferred lower limit of the Pb content is 0.3 ppm, and an upper limit is 2 ppm.

【0016】GaおよびZnは、いずれもAlマトリッ
クス中に固溶して箔表面の溶解性を増すことによりエッ
チングピットの成長を促進する効果がある。このような
効果において、Ga、Znは均等物であり、少なくとも
1種を含有すれば良い。また、Ga含有量およびZn含
有量は、それぞれ、1ppm 未満では前記効果に乏しく、
50ppm を超えると過溶解が生じるため、1〜50ppm
の範囲とする必要がある。特に好ましいGa含有量、Z
n含有量の下限値はそれぞれ5ppm であり、上限値はそ
れぞれ20ppm である。
Both Ga and Zn have the effect of promoting the growth of etching pits by forming a solid solution in the Al matrix to increase the solubility of the foil surface. In such an effect, Ga and Zn are equivalent and may contain at least one kind. If the content of Ga and the content of Zn are less than 1 ppm, the above effects are poor.
If it exceeds 50ppm, it will cause over-dissolution, so 1-50ppm
Must be within the range. Particularly preferred Ga content, Z
The lower limit of the n content is 5 ppm and the upper limit is 20 ppm.

【0017】[0017]

【実施例】次に、この発明の電解コンデンサ電極用アル
ミニウム箔の具体的実施例について説明する。
Next, specific examples of the aluminum foil for an electrolytic capacitor electrode of the present invention will be described.

【0018】まず、表1に示す実施例1〜13、比較例
14〜17の各種組成のアルミニウム鋳塊を面削した
後、熱間圧延、冷間圧延(中間焼鈍を含む)を施し、厚
さ100μmの箔とし、さらに最終焼鈍を行った。中間
焼鈍条件は、250℃×10時間、最終焼鈍条件は50
0℃×5時間である。
First, after the aluminum ingots of various compositions of Examples 1 to 13 and Comparative Examples 14 to 17 shown in Table 1 were face-cut, they were subjected to hot rolling and cold rolling (including intermediate annealing) to obtain a thickness. A 100 μm thick foil was further annealed. The intermediate annealing condition is 250 ° C. × 10 hours, and the final annealing condition is 50
0 ° C. × 5 hours.

【0019】上述のようにして作製した各アルミニウム
箔について、立方体(100)方位占有率および、粒径
1000μm以上の粗大粒子の有無を調べた。これらの
結果を表1に示す。
With respect to each of the aluminum foils prepared as described above, the occupancy of the cube (100) orientation and the presence or absence of coarse particles having a particle diameter of 1000 μm or more were examined. Table 1 shows the results.

【0020】次に、各アルミニウム箔について、以下の
条件でエッチングを実施したのち、得られたアルミニウ
ム箔を以下の条件で化成したときの静電容量を測定し
た。その結果を、比較例14の静電容量を100とした
ときの相対比較にて,併せて表1に示す。
Next, each aluminum foil was etched under the following conditions, and then the capacitance when the obtained aluminum foil was formed under the following conditions was measured. The results are also shown in Table 1 by a relative comparison when the capacitance of Comparative Example 14 is set to 100.

【0021】 [化成条件] 液組成:ホウ酸100g/l,ホウ酸アンモニウム0.9g/l 液温:90℃,電流密度:50mA/cm2 、250V [エッチング条件] 前処理:なし 一次エッチング 液組成:5%HCl+10%H2 SO4 、液温:80℃ 電流密度:直流20A/dm2 、時間:90秒 二次エッチング 液組成:5%HCl、液温:85℃ 電流密度:直流5A/dm2 、時間:10分[Chemical formation conditions] Liquid composition: boric acid 100 g / l, ammonium borate 0.9 g / l liquid temperature: 90 ° C., current density: 50 mA / cm 2 , 250 V [etching conditions] pretreatment: none primary etching liquid Composition: 5% HCl + 10% H 2 SO 4 , liquid temperature: 80 ° C. Current density: DC 20 A / dm 2 , time: 90 seconds Secondary etching Liquid composition: 5% HCl, liquid temperature: 85 ° C. Current density: DC 5 A / dm 2 , time: 10 minutes

【表1】 [Table 1]

【0022】表1の結果から、本発明範囲のCuおよび
Sbが共存する実施例は、本発明範囲を逸脱する比較例
に較べて立方体(100)方位占有率が高く、かつ焼鈍
後に粗大粒子の発生がなく、エッチングにより静電容量
を増大し得ることを確認し得た。また、CuおよびSb
の他に所定範囲のPb、Ga、Znを添加することによ
り、さらに静電容量の増大しうることも確認し得た。
From the results shown in Table 1, it can be seen that the examples in which Cu and Sb coexist in the range of the present invention have a higher cubic (100) orientation occupancy than the comparative examples that deviate from the range of the present invention, and that the coarse particles after annealing have a larger size. It was confirmed that there was no occurrence and that the capacitance could be increased by etching. In addition, Cu and Sb
In addition, it was confirmed that by adding Pb, Ga, and Zn in a predetermined range, the capacitance could be further increased.

【0023】[0023]

【発明の効果】この発明に係る電解コンデンサ電極用ア
ルミニウム箔は、箔合金組成において、アルミニウム純
度が99.9%以上であるとともに、Cu:30ppm を
超え100ppm 以下およびSb:5〜100ppm を含有
し、かつCu含有量CCu(ppm)およびSb含有量CSb(pp
m) が10CCu+7CSb≦1350なる関係を満たして
いるから、加熱処理後の粗大結晶の成長が抑制され、か
つ立方体(100)方位占有率も高くなる。そのため、
エッチング処理により極めて大きな拡面率を得ることが
でき、大きな静電容量を有し電気的特性に優れた電解コ
ンデンサ電極用アルミニウム箔となしうる。また、粗大
結晶の成長が抑制されることにより、箔強度も維持され
る。
The aluminum foil for an electrolytic capacitor electrode according to the present invention has, in the foil alloy composition, an aluminum purity of 99.9% or more, Cu: more than 30 ppm and 100 ppm or less, and Sb: 5 to 100 ppm. , And Cu content C Cu (ppm) and Sb content C Sb (pp
m) satisfies the relationship of 10C Cu + 7C Sb ≦ 1350, so that the growth of coarse crystals after the heat treatment is suppressed, and the occupancy of the cubic (100) orientation is also increased. for that reason,
An extremely large surface area can be obtained by the etching treatment, and the aluminum foil for an electrolytic capacitor electrode having a large capacitance and excellent electric characteristics can be obtained. Further, the growth of coarse crystals is suppressed, so that the foil strength is also maintained.

【0024】また、箔合金組成において、CuおよびS
bの基本含有元素の他に、Pb:0.1〜5ppm を含有
するもの、Ga:1〜50ppm またはZn:1〜50pp
m のうちの1種または2種を含有するもの、あるいは、
Pb:0.1〜5ppm と、Ga:1〜50ppm またはZ
n:1〜50ppm のうちの1種または2種とを含有する
ものは、いずれもさらに箔の溶解性が増し、さらに大き
な静電容量を有する電解コンデンサ電極用アルミニウム
箔となしうる。
In the foil alloy composition, Cu and S
In addition to the basic element b, Pb: 0.1 to 5 ppm, Ga: 1 to 50 ppm or Zn: 1 to 50 pp
m containing one or two of m, or
Pb: 0.1 to 5 ppm, Ga: 1 to 50 ppm or Z
In any case containing one or two of n: 1 to 50 ppm, the solubility of the foil is further increased, and an aluminum foil for an electrolytic capacitor electrode having a larger capacitance can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の電解コンデンサ電極用アルミニウム
箔の箔合金組成において、CuおよびSbの含有範囲を
示すグラフである。
FIG. 1 is a graph showing the content ranges of Cu and Sb in a foil alloy composition of an aluminum foil for an electrolytic capacitor electrode of the present invention.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤平 忠雄 堺市海山町6丁224番地 昭和アルミニウ ム株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tadao Fujihira 6224, Kaiyama-cho, Sakai City Showa Aluminum Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:30ppm を超
え100ppm 以下およびSb:5〜100ppm を含有
し、かつCu含有量CCu(ppm) およびSb含有量CSb(p
pm) が10CCu+7CSb≦1350なる関係を満たして
いることを特徴とする電解コンデンサ電極用アルミニウ
ム箔。
In a foil alloy composition, aluminum purity is not less than 99.9%, Cu is more than 30 ppm and not more than 100 ppm and Sb is 5 to 100 ppm, and Cu content is C Cu (ppm) and Sb. Content C Sb (p
pm) satisfying the relationship of 10C Cu + 7C Sb ≦ 1350.
【請求項2】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:30ppm を超
え100ppm 以下およびSb:5〜100ppm を含有
し、かつCu含有量CCu(ppm) およびSb含有量CSb(p
pm) が10CCu+7CSb≦1350なる関係を満たし、
さらにPb:0.1〜5ppm を含有していることを特徴
とする電解コンデンサ電極用アルミニウム箔。
2. A foil alloy composition, which has an aluminum purity of 99.9% or more, Cu of more than 30 ppm and 100 ppm or less and Sb of 5 to 100 ppm, and a Cu content of C Cu (ppm) and Sb. Content C Sb (p
pm) satisfies the relationship of 10C Cu + 7C Sb ≦ 1350,
An aluminum foil for an electrolytic capacitor electrode, further comprising Pb: 0.1 to 5 ppm.
【請求項3】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:30ppm を超
え100ppm 以下およびSb:5〜100ppm を含有
し、Cu含有量CCu(ppm) およびSb含有量CSb(ppm)
が10CCu+7CSb≦1350なる関係を満たし、さら
にGa:1〜50ppm またはZn:1〜50ppm のうち
の1種または2種を含有していることを特徴とする電解
コンデンサ電極用アルミニウム箔。
3. The foil alloy composition has an aluminum purity of 99.9% or more, Cu of more than 30 ppm and 100 ppm or less and Sb of 5 to 100 ppm, and Cu content C Cu (ppm) and Sb content. Quantity C Sb (ppm)
Satisfies the relationship of 10C Cu + 7C Sb ≦ 1350, and further contains one or two of Ga: 1 to 50 ppm or Zn: 1 to 50 ppm.
【請求項4】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:30ppm を超
え100ppm 以下およびSb:5〜100ppm を含有
し、かつCu含有量CCu(ppm) およびSb含有量CSb(p
pm) が10CCu+7CSb≦1350なる関係を満たし、
さらに、Pb:0.1〜5ppm 、およびGa:1〜50
ppm またはZn:1〜50ppm のうちの1種または2種
を含有していることを特徴とする電解コンデンサ電極用
アルミニウム箔。
4. A foil alloy composition having an aluminum purity of not less than 99.9%, a Cu content of more than 30 ppm and 100 ppm or less and a Sb content of 5 to 100 ppm, and a Cu content of C Cu (ppm) and Sb. Content C Sb (p
pm) satisfies the relationship of 10C Cu + 7C Sb ≦ 1350,
Further, Pb: 0.1 to 5 ppm, and Ga: 1 to 50
ppm or Zn: an aluminum foil for an electrode of an electrolytic capacitor, characterized by containing one or two of 1 to 50 ppm.
JP02467097A 1997-02-07 1997-02-07 Aluminum foil for electrolytic capacitor electrodes Expired - Fee Related JP3590228B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02467097A JP3590228B2 (en) 1997-02-07 1997-02-07 Aluminum foil for electrolytic capacitor electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02467097A JP3590228B2 (en) 1997-02-07 1997-02-07 Aluminum foil for electrolytic capacitor electrodes

Publications (2)

Publication Number Publication Date
JPH10223485A true JPH10223485A (en) 1998-08-21
JP3590228B2 JP3590228B2 (en) 2004-11-17

Family

ID=12144585

Family Applications (1)

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Country Status (1)

Country Link
JP (1) JP3590228B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007009318A (en) * 2005-05-31 2007-01-18 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor
JP2007146269A (en) * 2004-12-21 2007-06-14 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor
JP2012144809A (en) * 2005-05-31 2012-08-02 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007146269A (en) * 2004-12-21 2007-06-14 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor
JP2007009318A (en) * 2005-05-31 2007-01-18 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor
JP2012144809A (en) * 2005-05-31 2012-08-02 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor

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