JPH10215002A - Light-emitting diode and its manufacturing method - Google Patents
Light-emitting diode and its manufacturing methodInfo
- Publication number
- JPH10215002A JPH10215002A JP9018798A JP1879897A JPH10215002A JP H10215002 A JPH10215002 A JP H10215002A JP 9018798 A JP9018798 A JP 9018798A JP 1879897 A JP1879897 A JP 1879897A JP H10215002 A JPH10215002 A JP H10215002A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- emitting diode
- fluorescent film
- chip
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＬＥＤとも称され
ている発光ダイオードに関するものであり、詳細には、
発光色の変換を目的とする蛍光剤が使用されて成る発光
ダイオードおよびその製造方法に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode also called an LED, and more particularly, to a light emitting diode.
The present invention relates to a light emitting diode using a fluorescent agent for converting a light emission color and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来のこの種の発光ダイオード９０の例
を示すものが図６〜図８であり、先ず図６に示すよう
に、チップマウント部９１ａが設けられた平面基板９１
にＬＥＤチップ９２をマウントし、ワイヤーボンドによ
り配線を行う。次いで、図７に示すように蛍光剤９３ａ
が混和されたエポキシ樹脂を滴下するなどして前記ＬＥ
Ｄチップ９２を覆い硬化させ蛍光層９３を形成する。2. Description of the Related Art FIGS. 6 to 8 show examples of a conventional light emitting diode 90 of this type. First, as shown in FIG. 6, a flat substrate 91 provided with a chip mount portion 91a is provided.
Is mounted with an LED chip 92, and wiring is performed by wire bonding. Next, as shown in FIG.
The epoxy resin mixed with
The D chip 92 is covered and cured to form a fluorescent layer 93.
【０００３】しかる後に、図８に示すように金型８０を
用意して、前記蛍光層９３を覆うように金型８０と平面
基板９１との空所に透明エポキシ樹脂を注入し硬化させ
てケース９４を形成する。このようにすることで、前記
ＬＥＤチップ９２から発せられる光の波長は、前記蛍光
層９３を通過することで波長がシフトし、発光色の変換
が行えるのである。Thereafter, as shown in FIG. 8, a mold 80 is prepared, and a transparent epoxy resin is injected into the space between the mold 80 and the flat substrate 91 so as to cover the fluorescent layer 93, and is cured to form a case. Form 94. By doing so, the wavelength of the light emitted from the LED chip 92 is shifted by passing through the fluorescent layer 93, so that the emission color can be converted.
【０００４】尚、実際の生産に当たっては、発光ダイオ
ード９０の個別に金型８０を用意し、それぞれに透明エ
ポキシ樹脂の注入を行うのでは大変に手間が係るものと
成るので、平面基板９１は複数が並列に連接された一面
の状態として形成しておき、ＬＥＤチップ９２のマウン
ト、蛍光層９３の形成を個々に行った後に、１つの金型
８０で全体が連接するケース９４を形成し、後に切断す
ることで個々の発光ダイオード９０に分離している。In actual production, it is very troublesome to prepare a mold 80 for each of the light emitting diodes 90 and inject a transparent epoxy resin into each mold. Are formed as one surface connected in parallel, the LED chip 92 is mounted, and the fluorescent layer 93 is formed individually. Then, a case 94 that is connected entirely by one mold 80 is formed. The individual light emitting diodes 90 are separated by cutting.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、前記し
た従来の製造方法においては、第一には、ケースの形成
に金型８０が必要となるものであるので、例えば金型８
０と平面基板９１との位置合わせなどに慎重な作業が要
求されるものとなり、更には、金型８０の管理なども必
要となり、生産工程が煩雑化する問題点を生じる。However, in the above-described conventional manufacturing method, firstly, since the mold 80 is required for forming the case, for example, the mold 8 is required.
Careful work is required for the alignment between the 0 and the flat substrate 91, and furthermore, the management of the mold 80 is also required, which causes a problem that the production process becomes complicated.
【０００６】第二には、上記蛍光層９３の形成時には、
蛍光剤９３ａを混和したエポキシ樹脂の硬化が大気中で
行われるものとなり、エポキシ樹脂が吸湿するなどして
変性し、耐熱性の低下、耐久性の低下を生じ、完成後の
発光ダイオード９０の寿命などに影響を与える問題点も
生じ、これらの点の解決が課題とされるものとなってい
た。Second, at the time of forming the fluorescent layer 93,
The curing of the epoxy resin mixed with the fluorescent agent 93a is performed in the air, and the epoxy resin is denatured by absorbing moisture or the like, resulting in reduced heat resistance and reduced durability. There are also problems that affect such factors, and solving these problems has been an issue.
【０００７】[0007]
【課題を解決するための手段】本発明は前記した従来の
課題を解決するための具体的手段として、立体成形基板
に複数のチップマウント凹部が連接された溝状部を形成
し、該溝状部の前記チップマウント凹部のそれぞれにＬ
ＥＤチップのマウントおよび配線を行った後に前記溝状
部を薄板状とした蛍光フィルムで施蓋し、しかる後に前
記溝状部と蛍光フィルムとに生じる空所に透明封止材を
注入し硬化させて、前記チップマウント凹部間で切断分
離を行うことを特徴とする発光ダイオードの製造方法を
提供することで課題を解決するものである。According to the present invention, as a specific means for solving the above-mentioned conventional problems, a three-dimensionally formed substrate is formed with a groove-like portion in which a plurality of chip mount concave portions are connected. L on each of the chip mount recesses
After mounting and wiring of the ED chip, the groove portion is covered with a thin fluorescent film, and then a transparent sealing material is injected into a space formed in the groove portion and the fluorescent film and cured. The object is achieved by providing a method for manufacturing a light emitting diode, characterized in that cutting and separating are performed between the chip mount concave portions.
【０００８】[0008]
【発明の実施の形態】つぎに、本発明を図に示す実施形
態に基づいて詳細に説明する。図１〜図３は本発明に係
る発光ダイオード１の製造方法を工程の順に示すもので
あり、図１はマウント工程を示し、図中に符号２で示す
ものは立体成形基板であり、この立体成形基板２には、
溝状部３が形成され、この溝状部３の底面には金属箔な
どによる配線が行われて複数のチップマウント凹部３ａ
が形成されている。Next, the present invention will be described in detail based on an embodiment shown in the drawings. 1 to 3 show a method of manufacturing the light emitting diode 1 according to the present invention in the order of steps, FIG. 1 shows a mounting step, and a reference numeral 2 in the figure denotes a three-dimensional molded substrate. On the molded substrate 2,
A groove portion 3 is formed, and a plurality of chip mount recesses 3a are formed on the bottom surface of the groove portion 3 by wiring with metal foil or the like.
Are formed.
【０００９】そして、前記チップマウント凹部３ａのそ
れぞれにはＬＥＤチップ４が例えば導電接着剤などを用
いて接着固定されることでマウントが行われてＬＥＤチ
ップ４の一方の極と立体成形基板２との接続が行われ、
他方の極とはワイヤーボンドなどにより接続が行われる
ものとなる。The LED chip 4 is mounted in each of the chip mount recesses 3a by bonding using, for example, a conductive adhesive or the like. Connection is made,
The other pole is connected by wire bonding or the like.
【００１０】このようにしてＬＥＤチップ４の取付けが
行われた前記チップマウント凹部３ａ、即ち、溝状部３
は続く工程で図２に示すように蛍光フィルム５による施
蓋が接着など適宜な手段により行われる。従って、前記
溝状部３を形成するに当たっては、この溝状部３の深さ
は前記ＬＥＤチップ４をマウントし配線を行うのに充分
なものとされている。The chip mount recess 3a on which the LED chip 4 is mounted in this manner, ie, the groove 3
In a subsequent step, as shown in FIG. 2, covering with the fluorescent film 5 is performed by an appropriate means such as adhesion. Therefore, in forming the groove 3, the depth of the groove 3 is sufficient to mount the LED chip 4 and perform wiring.
【００１１】ここで、前記蛍光フィルム５は、蛍光物質
を薄板状に形成したものでも良く、透明樹脂に蛍光物質
を混和したものを薄板状に形成したものでも良く、或い
は、薄板状の透明樹脂の表面に蛍光物質を印刷などの手
段で成膜したものでも良く、要は前記ＬＥＤチップ４か
らの光の波長を、所望の波長に変換可能であれば形態は
問わないものである。Here, the fluorescent film 5 may be a thin plate made of a fluorescent substance, a transparent resin mixed with a fluorescent substance formed in a thin plate, or a thin transparent resin. A fluorescent substance may be formed on the surface of the substrate by printing or other means. In other words, any form can be used as long as the wavelength of light from the LED chip 4 can be converted to a desired wavelength.
【００１２】上記のように溝状部３を蛍光フィルム５で
施蓋したことで、立体成形基板２の溝状部３の部分は蛍
光フィルム５との間に空所を生じるものと成り、本発明
ではこの空所に透明なエポキシ樹脂などによる透明封止
材６を注入して充填し（図２参照）、加熱など適宜な硬
化処理を行い硬化させる。Since the groove 3 is covered with the fluorescent film 5 as described above, the groove 3 of the three-dimensional molded substrate 2 has a space between the groove 3 and the fluorescent film 5. In the present invention, a transparent sealing material 6 made of a transparent epoxy resin or the like is injected and filled into the space (see FIG. 2), and is cured by an appropriate curing treatment such as heating.
【００１３】しかる後に、図３に示すように、前記立体
成形基板２を各々のチップマウント凹部３ａ間、即ち、
ＬＥＤチップ４間で切断を行えば、図４に示すように、
本発明が目的とする構成とした、発光ダイオード１の複
数が個別に分離した状態として得られるものと成るので
ある。Thereafter, as shown in FIG. 3, the three-dimensional molded substrate 2 is placed between the respective chip mount concave portions 3a, ie,
By cutting between the LED chips 4, as shown in FIG.
A plurality of light-emitting diodes 1 having the configuration aimed at by the present invention can be obtained in a state of being individually separated.
【００１４】次いで、上記の製造方法としたことによる
作用および効果について説明を行う。先ず、第一には、
溝状部３を蛍光フィルム５により施蓋し、それによって
生じる空所に透明封止材６を注入してＬＥＤチップ４の
封止を行うものとしたことで、透明封止材６に形状を与
えるための金型が不要となる。Next, the function and effect of the above manufacturing method will be described. First of all,
The groove-shaped portion 3 is covered with the fluorescent film 5 and the LED chip 4 is sealed by injecting the transparent encapsulant 6 into the space created thereby, so that the transparent encapsulant 6 has a shape. A mold for giving is unnecessary.
【００１５】このことは、工程時において立体成形基板
２と金型との位置合わせなど、煩雑な作業が不要となる
と共に、発光ダイオード１の外観の一部を形成する所と
なることで、非常に厳密なことが要求される金型の表面
状態の管理なども不要となり、工程が簡素化する。This eliminates the need for complicated operations such as the positioning of the three-dimensional molded substrate 2 and the mold during the process, and forms a part of the appearance of the light-emitting diode 1. It is not necessary to control the surface condition of the mold, which is required to be strict, and the process is simplified.
【００１６】また、第二には、蛍光フィルム５を予めに
薄板状として形成して置くものとしたことで、発光ダイ
オード１の生産工程としては、蛍光層の形成のための液
状樹脂の注入、硬化処理などの工程を不要とし、上記と
同様に工程の簡素化が計れると共に、従来は大気中で硬
化処理を行わざるを得ず生じていた蛍光層の特性劣化な
ども防止可能となる。Second, since the fluorescent film 5 is previously formed in a thin plate shape and placed, the production process of the light emitting diode 1 includes injection of a liquid resin for forming a fluorescent layer, A process such as a curing process is not required, and the process can be simplified in the same manner as described above. In addition, it is possible to prevent deterioration of the characteristics of the fluorescent layer, which has conventionally been forced to be performed in the air.
【００１７】図５は本発明の別の実施形態を示すもので
あり、前の実施形態では前記蛍光フィルム５は平板な薄
板状とされていたが、この実施形態では、例えば、加熱
型押し処理などにより一部をレンズ状部７ａとして突出
する薄板状とした蛍光フィルム７とするものであり、こ
のように形状を変更することで、発光ダイオード１が発
する光の指向性などを自在に設定できるものとなる。FIG. 5 shows another embodiment of the present invention. In the previous embodiment, the fluorescent film 5 was formed as a flat thin plate. The thin film-shaped fluorescent film 7 partly protrudes as a lens-shaped portion 7a by, for example, and the directivity of light emitted from the light emitting diode 1 can be freely set by changing the shape in this manner. It will be.
【００１８】[0018]
【発明の効果】以上に説明したように本発明により、立
体成形基板に複数のチップマウント凹部が連接された溝
状部を形成し、該溝状部の前記チップマウント凹部のそ
れぞれにＬＥＤチップのマウントおよび配線を行った後
に前記溝状部を薄板状とした蛍光フィルムで施蓋し、し
かる後に前記溝状部と蛍光フィルムとに生じる空所に透
明封止材を注入し硬化させて、前記チップマウント凹部
間で切断分離を行う発光ダイオードの製造方法としたこ
とで、溝状部と蛍光フィルムとに生じる空所に透明封止
材を注入すれば良いものとして製造工程中から金型を不
要とし、工程の簡素化を可能としてコストダウンに極め
て優れた効果を奏するものである。As described above, according to the present invention, a groove-shaped portion in which a plurality of chip mount concave portions are connected to each other is formed on a three-dimensional molded substrate, and an LED chip is provided in each of the chip mount concave portions of the groove-shaped portion. After performing mounting and wiring, the groove-shaped portion is covered with a thin-plate-shaped fluorescent film, and then a transparent sealing material is injected into a space created in the groove-shaped portion and the fluorescent film, and cured, and By adopting a method of manufacturing a light-emitting diode that cuts and separates between chip-mount recesses, it is only necessary to inject a transparent encapsulant into the voids created between the groove and the fluorescent film, eliminating the need for a mold during the manufacturing process Thus, the process can be simplified, and an extremely excellent effect on cost reduction can be obtained.
【００１９】また、蛍光層となる蛍光フィルムを予めに
形成しておくことで、従来例のように蛍光層をエポキシ
樹脂の大気中の硬化などの手段で形成しなくて良いもの
とし、硬化時に湿度を吸収して耐熱性の低下、耐久性の
低下などにより発光ダイオードとしての寿命の短縮化も
生じないものとし、信頼性の向上にも優れた効果を奏す
るものである。Further, by forming a fluorescent film to be a fluorescent layer in advance, it is not necessary to form the fluorescent layer by means of curing the epoxy resin in the air as in the conventional example. By absorbing humidity, the life of the light emitting diode is not shortened due to a decrease in heat resistance and a decrease in durability.
【図１】 本発明に係る発光ダイオードの製造方法の実
施形態のマウント工程を示す説明図である。FIG. 1 is an explanatory view showing a mounting step of an embodiment of a method for manufacturing a light emitting diode according to the present invention.
【図２】 同じ実施形態の蛍光フィルムの貼着および透
明封止材の注入工程を示す説明図である。FIG. 2 is an explanatory view showing a process of attaching a fluorescent film of the same embodiment and injecting a transparent sealing material.
【図３】 同じ実施形態の切断工程を示す説明図であ
る。FIG. 3 is an explanatory view showing a cutting step of the same embodiment.
【図４】 本発明に係る発光ダイオードの実施形態を示
す斜視図である。FIG. 4 is a perspective view showing an embodiment of a light emitting diode according to the present invention.
【図５】 同じく本発明に係る発光ダイオードの別の実
施形態を示す斜視図である。FIG. 5 is a perspective view showing another embodiment of the light emitting diode according to the present invention.
【図６】 従来例のマウント工程を示す説明図である。FIG. 6 is an explanatory view showing a mounting step of a conventional example.
【図７】 同じ従来例の蛍光層の形成工程を示す説明図
である。FIG. 7 is an explanatory view showing a process of forming a fluorescent layer of the same conventional example.
【図８】 同じくケースの形成工程を示す説明図であ
る。FIG. 8 is an explanatory view showing a case forming process.
１……発光ダイオード ２……立体成形基板 ３……溝状部 ３ａ……チップマウント凹部 ４……ＬＥＤチップ ５、７……蛍光フィルム ６……透明封止材 DESCRIPTION OF SYMBOLS 1 ... Light-emitting diode 2 ... Three-dimensional molded board 3 ... Groove part 3a ... Chip mount concave part 4 ... LED chip 5, 7 ... Fluorescent film 6 ... Transparent sealing material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉澤 正史 神奈川県横浜市青葉区荏田西二丁目14番１ 号 スタンレー電気株式会社横浜技術セン ター内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Masafumi Yoshizawa 2-1-1, Edanishi, Aoba-ku, Yokohama-shi, Kanagawa Pref. Stanley Electric Co., Ltd. Yokohama Technical Center
Claims (2)
部が連接された溝状部を形成し、該溝状部の前記チップ
マウント凹部のそれぞれにＬＥＤチップのマウントおよ
び配線を行った後に前記溝状部を薄板状とした蛍光フィ
ルムで施蓋し、しかる後に前記溝状部と蛍光フィルムと
に生じる空所に透明封止材を注入し硬化させて、前記チ
ップマウント凹部間で切断分離を行うことを特徴とする
発光ダイオードの製造方法。1. A groove formed by connecting a plurality of chip mount recesses to a three-dimensional molded substrate, and mounting and wiring an LED chip on each of the chip mount recesses of the groove. Covering with a thin film-shaped fluorescent film, and then injecting and curing a transparent sealing material into a space formed in the groove-shaped portion and the fluorescent film, and performing cutting and separation between the chip mount concave portions. A method for manufacturing a light emitting diode, characterized by comprising:
形基板と、前記チップマウント凹部にマウントおよび配
線が行われたＬＥＤチップと、前記チップマウント凹部
を施蓋する蛍光フィルムと、前記チップマウント凹部と
前記蛍光フィルムとに生じる空所に透明封止材が充填さ
れていることを特徴とする発光ダイオード。2. A three-dimensional molded substrate having a chip mount recess formed thereon, an LED chip mounted and wired in the chip mount recess, a fluorescent film covering the chip mount recess, and the chip mount recess. A light emitting diode, wherein a transparent encapsulant is filled in a void formed in the fluorescent film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01879897A JP3424061B2 (en) | 1997-01-31 | 1997-01-31 | Light emitting diode manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01879897A JP3424061B2 (en) | 1997-01-31 | 1997-01-31 | Light emitting diode manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10215002A true JPH10215002A (en) | 1998-08-11 |
| JP3424061B2 JP3424061B2 (en) | 2003-07-07 |
Family
ID=11981619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01879897A Expired - Fee Related JP3424061B2 (en) | 1997-01-31 | 1997-01-31 | Light emitting diode manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3424061B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001111117A (en) * | 1999-09-03 | 2001-04-20 | Agilent Technol Inc | Light emitting device using light emitting diodes and manufacturing method thereof |
| KR100691174B1 (en) | 2005-05-24 | 2007-03-09 | 삼성전기주식회사 | Side-emitting light emitting diode and fabrication method thereof |
| WO2008023468A1 (en) * | 2006-08-25 | 2008-02-28 | Sharp Kabushiki Kaisha | Light emitting element, light emitting array, backlight unit, and liquid crystal display |
| JP2009117536A (en) * | 2007-11-05 | 2009-05-28 | Towa Corp | Resin-sealed light emitter, and manufacturing method thereof |
| KR100972979B1 (en) * | 2008-03-17 | 2010-07-29 | 삼성엘이디 주식회사 | Led package and manufacturing method for the same |
| KR101102302B1 (en) * | 2011-08-09 | 2012-01-03 | 루미리치 주식회사 | Lighting emitting diode device |
| JP2012074739A (en) * | 2004-06-09 | 2012-04-12 | Philips Lumileds Lightng Co Llc | Semiconductor light-emitting device with pre-fabricated wavelength converting element |
| EP2523229A3 (en) * | 2011-05-09 | 2012-12-19 | Lumirich Co., Ltd. | Light emitting diode device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1878062A2 (en) * | 2005-04-28 | 2008-01-16 | Koninklijke Philips Electronics N.V. | Light source comprising led arranged in recess |
-
1997
- 1997-01-31 JP JP01879897A patent/JP3424061B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011181510A (en) * | 1999-09-03 | 2011-09-15 | Philips Lumileds Lightng Co Llc | Manufacturing method of light-emitting device using light-emitting diode |
| JP2001111117A (en) * | 1999-09-03 | 2001-04-20 | Agilent Technol Inc | Light emitting device using light emitting diodes and manufacturing method thereof |
| US8748921B2 (en) | 2004-06-09 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Semiconductor light emitting device with pre-fabricated wavelength converting element |
| JP2012074739A (en) * | 2004-06-09 | 2012-04-12 | Philips Lumileds Lightng Co Llc | Semiconductor light-emitting device with pre-fabricated wavelength converting element |
| KR100691174B1 (en) | 2005-05-24 | 2007-03-09 | 삼성전기주식회사 | Side-emitting light emitting diode and fabrication method thereof |
| WO2008023468A1 (en) * | 2006-08-25 | 2008-02-28 | Sharp Kabushiki Kaisha | Light emitting element, light emitting array, backlight unit, and liquid crystal display |
| US8128261B2 (en) | 2006-08-25 | 2012-03-06 | Sharp Kabushiki Kaisha | Light emitting element, light emitting element array, backlight unit, and liquid crystal display |
| JP2009117536A (en) * | 2007-11-05 | 2009-05-28 | Towa Corp | Resin-sealed light emitter, and manufacturing method thereof |
| KR100972979B1 (en) * | 2008-03-17 | 2010-07-29 | 삼성엘이디 주식회사 | Led package and manufacturing method for the same |
| US8927304B2 (en) | 2008-03-17 | 2015-01-06 | Samsung Electronics Co., Ltd. | LED package and method of manufacturing the same |
| EP2523229A3 (en) * | 2011-05-09 | 2012-12-19 | Lumirich Co., Ltd. | Light emitting diode device |
| US8648374B2 (en) | 2011-05-09 | 2014-02-11 | Lumirich Co., Ltd. | Light emitting diode device including a heat-radiation/light-reflection member |
| KR101102302B1 (en) * | 2011-08-09 | 2012-01-03 | 루미리치 주식회사 | Lighting emitting diode device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3424061B2 (en) | 2003-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2284913B1 (en) | Manufacturing method of light emitting diode | |
| US7498734B2 (en) | Light emitting device with wavelength converted by phosphor | |
| JP4824275B2 (en) | Method for manufacturing light-emitting diode light source provided with light-emitting conversion element | |
| JP6442504B2 (en) | Conversion element and method of manufacturing optoelectronic component | |
| US8921132B2 (en) | Method for manufacturing LED package | |
| US10847683B2 (en) | Package and light emitting device | |
| CN109093909B (en) | LED circuit board glue filling mold, method and LED circuit board packaging structure | |
| JP2002368281A (en) | Method of manufacturing light-emitting diode | |
| JP2000077725A (en) | Semiconductor package and manufacture thereof | |
| US5909037A (en) | Bi-level injection molded leadframe | |
| JP2002093202A (en) | Surface light emitting back light device and method of manufacturing it | |
| CN102832295A (en) | Method for fabricating package structure of light-emitting diode | |
| JP2002094123A (en) | Surface-mounted light emitting diode and its manufacturing method | |
| JPH10215002A (en) | Light-emitting diode and its manufacturing method | |
| KR20180125578A (en) | For fabricating a device with a reflector and devices | |
| JP2001196640A (en) | Side light emitting led device and its manufacturing method | |
| JP3604108B2 (en) | Manufacturing method of chip type optical semiconductor | |
| JPH05315651A (en) | Method of manufacturing side emission type semiconductor light-emitting element | |
| JP5180694B2 (en) | LED chip mounting substrate manufacturing method, LED chip mounting substrate mold, LED chip mounting substrate, and LED | |
| KR101636516B1 (en) | method of manufacturing LED module having lens | |
| JP2006245626A (en) | Manufacturing method of light-emitting diode | |
| KR100757825B1 (en) | Manufacturing method of light emitting diode | |
| US7358598B2 (en) | Process for fabricating a semiconductor package and semiconductor package with leadframe | |
| US20210372597A1 (en) | Device comprising a lead frame and method for producing a plurality of devices | |
| JP3474841B2 (en) | Manufacturing method of surface mount components |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090502 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090502 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100502 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110502 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110502 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120502 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130502 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140502 Year of fee payment: 11 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |