JPH10209316A - Package for housing solid state imaging element - Google Patents

Package for housing solid state imaging element

Info

Publication number
JPH10209316A
JPH10209316A JP9008753A JP875397A JPH10209316A JP H10209316 A JPH10209316 A JP H10209316A JP 9008753 A JP9008753 A JP 9008753A JP 875397 A JP875397 A JP 875397A JP H10209316 A JPH10209316 A JP H10209316A
Authority
JP
Japan
Prior art keywords
resin
state imaging
solid
imaging device
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9008753A
Other languages
Japanese (ja)
Inventor
Muneshige Kawabe
宗重 川辺
Yoji Kobayashi
洋二 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP9008753A priority Critical patent/JPH10209316A/en
Publication of JPH10209316A publication Critical patent/JPH10209316A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To perfectly hermetically seal a vessel for housing a solid state imaging element and activate a photoelectric conversion for a long time, by specifying the thickness of a transparent resin cover of a package for housing this imaging element. SOLUTION: Lead terminals 5 are attached to an insulation board 1 having a transparent resin cover 2 mounted to its top surface through a seal 7 to close a recess 1a of the board 1. A vessel 4 composed of the board 1 and the resin cover 2 is hermetically sealed to hermetically house a solid state imaging element 3. The cover 2 has a thickness ranging between 0.5mm and 2mm. This makes good the hermetic seal of the vessel composed of the board 1 and the cover 2, thereby operating the element 3 housed in the vessel 4 normally and stably for a long time.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、固体撮像素子を収
容するための固体撮像素子収納用パッケージに関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating a solid-state image sensing device.

【0002】[0002]

【従来の技術】従来、固体撮像素子を収容するための固
体撮像素子収納用パッケージは、エポキシ樹脂等の有機
樹脂や酸化アルミニウム質焼結体、ムライト質焼結体、
窒化アルミニウム質焼結体、炭化珪素質焼結体、ガラス
ーセラミック焼結体等のセラミックスなどから成り、上
面に固体撮像素子を搭載するための凹部を有する絶縁基
体と、内端部が前記絶縁基体の凹部内部に露出するとと
もに外端部が前記絶縁基体の外部に突出した複数のリー
ド端子と、前記絶縁基体の上面にエポキシ樹脂から成る
封止材を介して取着され、絶縁基体の凹部を塞ぐ厚さ約
2mm程度のガラスから成る透光性蓋体とから構成され
ており、絶縁基体の凹部底面に固体撮像素子をエポキシ
樹脂等の樹脂製接着剤を介して接着固定するとともに該
固体撮像素子の各電極をリード端子の内端部にボンディ
ングワイヤーを介して電気的に接続し、しかる後、前記
絶縁基体の上面にガラスから成る透光性蓋体をエポキシ
樹脂から成る封止材を介して接合させ、固体撮像素子を
絶縁基体と透光性蓋体とから成る容器内部に気密に収容
することによって固体撮像装置となる。
2. Description of the Related Art Conventionally, a package for accommodating a solid-state image sensor has been made of an organic resin such as an epoxy resin, an aluminum oxide sintered body, a mullite sintered body, or the like.
An insulating base made of ceramics such as an aluminum nitride-based sintered body, a silicon carbide-based sintered body, and a glass-ceramic sintered body, and having a concave portion for mounting a solid-state imaging device on an upper surface; A plurality of lead terminals that are exposed inside the recess of the base and whose outer ends protrude outside the insulating base; and are attached to the upper surface of the insulating base via a sealing material made of epoxy resin, And a light-transmitting lid made of glass having a thickness of about 2 mm, which seals the solid-state imaging device with a resin adhesive such as an epoxy resin on the bottom surface of the concave portion of the insulating base. Each electrode of the imaging element is electrically connected to the inner end of the lead terminal via a bonding wire, and then a light-transmitting lid made of glass is sealed on the upper surface of the insulating base with epoxy resin. It is bonded via, and the solid-state imaging device by accommodating hermetically the container interior made of solid-state image pickup element and an insulating substrate and the transparent lid.

【0003】なお、前記固体撮像装置は固体撮像素子収
納用パッケージの外部に突出した複数のリード端子を外
部電気回路に接続させ、内部に収容する固体撮像素子の
各電極を外部電気回路に接続するとともに光学的画像を
透光性蓋体を介して固体撮像素子に照射結像させ、固体
撮像素子に光電変換を起こさせることによってビデオカ
メラ等の撮像装置として機能する。
In the solid-state imaging device, a plurality of lead terminals protruding outside the solid-state imaging device housing package are connected to an external electric circuit, and each electrode of the solid-state imaging device housed inside is connected to the external electric circuit. At the same time, the solid-state imaging device is irradiated with an optical image through a light-transmitting lid to form an image, and the solid-state imaging device performs photoelectric conversion to function as an imaging device such as a video camera.

【0004】また、前記固体撮像素子収納用パッケージ
は、固体撮像素子を搭載する際の熱や固体撮像素子の作
動時に発生する熱によって絶縁基体と固体撮像素子との
間に大きな熱応力が発生し、該熱応力に起因して固体撮
像素子に割れやクラックが発生したり、固体撮像素子が
絶縁基体より剥がれたりするのを有効に防止するため、
通常、絶縁基体はその熱膨張係数が固体撮像素子を構成
するシリコンの熱膨張係数(2.5×10-6/℃〜3.
5×10-6/℃)に近似した材料、具体的には、熱膨張
係数が3×10-6/℃〜10×10-6/℃程度の酸化ア
ルミニウム質焼結体やムライト質焼結体、窒化アルミニ
ウム質焼結体、炭化珪素質焼結体、ガラスーセラミック
焼結体等のセラミックス、或いは、熱膨張係数が10×
10-6/℃〜20×10-6/℃程度のエポキシ樹脂中に
熱膨張係数が小さいシリカ等のフィラーを多量に含有さ
せた有機樹脂で形成されている。
Further, in the solid-state imaging device housing package, a large thermal stress is generated between the insulating base and the solid-state imaging device due to heat generated when the solid-state imaging device is mounted or when the solid-state imaging device is operated. In order to effectively prevent the solid-state imaging device from cracking or cracking due to the thermal stress, and to effectively prevent the solid-state imaging device from peeling off from the insulating base,
Normally, the insulating substrate has a thermal expansion coefficient of 2.5 × 10 −6 / ° C.
5 × 10 −6 / ° C.), specifically, an aluminum oxide sintered body or a mullite sintered material having a thermal expansion coefficient of about 3 × 10 −6 / ° C. to 10 × 10 −6 / ° C. , Sintered body such as aluminum nitride sintered body, silicon carbide based sintered body, glass-ceramic sintered body, etc., or has a thermal expansion coefficient of 10 ×
10 -6 / ℃ ~20 × 10 -6 / thermal expansion coefficients in the epoxy resin of about ° C. is formed by the filler and the organic resin large amount is contained in a small silica.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、前述の
固体撮像素子収納用パッケージは、透光性蓋体が一般に
ガラスで形成されており、該ガラスは脆弱で耐衝撃性に
劣ることから、透光性蓋体を絶縁基体に接合させる際等
において透光性蓋体に外力(衝撃力)が印加されるとそ
の外力によって透光性蓋体の一部が欠け、小片となって
固体撮像素子上に落下し付着してしまい、その結果、固
体撮像素子に光学的画像に対応する正確な光電変換を起
こさせることができなくなるという欠点を有していた。
However, in the above-mentioned package for accommodating a solid-state image sensor, the light-transmitting lid is generally formed of glass, and the glass is fragile and has poor impact resistance. When an external force (impact force) is applied to the light-transmitting lid when, for example, joining the light-transmitting lid to the insulating base, the light-transmitting lid is partially cut off by the external force and becomes a small piece on the solid-state imaging device. The solid-state imaging device has a drawback that accurate photoelectric conversion corresponding to an optical image cannot be caused.

【0006】そこで上記欠点を解消するために厚さ約2
mm程度のガラスから成る透光性蓋体を欠けが発生しに
くいポリカーボネート樹脂やポリオレフィン樹脂、アク
リル樹脂、ポリメタクリル酸樹脂等の透光性樹脂で代替
形成することが考えられる。
Therefore, in order to solve the above-mentioned drawbacks, the thickness of about 2
It is conceivable to replace the light-transmitting lid made of glass of about mm with a light-transmitting resin such as a polycarbonate resin, a polyolefin resin, an acrylic resin, and a polymethacrylic acid resin, which hardly causes chipping.

【0007】しかしながら、前記透光性蓋体をポリカー
ボネート樹脂やポリオレフィン樹脂、アクリル樹脂、ポ
リメタクリル酸樹脂等の透光性樹脂により形成すると、
該ポリカーボネート樹脂等の透光性樹脂の熱膨張係数は
約90×10-6/℃〜110×10-6/℃であり、絶縁
基体の熱膨張係数(絶縁基体がセラミックスで形成され
ている場合は3×10-6/℃〜10×10-6/℃、熱膨
張係数が小さいシリカ等のフィラーを多量に含有させた
有機樹脂で形成されている場合は10×10-6/℃〜2
0×10-6/℃)と大きく相違することから透光性樹脂
蓋体を封止材を介して絶縁基体に接合させた後、絶縁基
体と透光性樹脂蓋体に熱が印加されるとその熱によって
両者間に大きな熱応力が発生するとともに該熱応力によ
って透光性樹脂蓋体が絶縁基体より剥離したり、絶縁基
体にクラックや割れ等が発生したりしてしまい、その結
果、絶縁基体と透光性樹脂蓋体とから成る容器の気密が
破れ、容器内部に収容した固体撮像素子を長期間にわた
り正常、且つ安定に作動させることができなくなるとい
う欠点が誘発される。
However, when the light-transmitting lid is formed of a light-transmitting resin such as a polycarbonate resin, a polyolefin resin, an acrylic resin, and a polymethacrylic resin,
The coefficient of thermal expansion of the translucent resin such as the polycarbonate resin is about 90 × 10 −6 / ° C. to 110 × 10 −6 / ° C., and the coefficient of thermal expansion of the insulating base (when the insulating base is formed of ceramics) Is 3 × 10 −6 / ° C. to 10 × 10 −6 / ° C., and 10 × 10 −6 / ° C. to 2 × when formed of an organic resin containing a large amount of filler such as silica having a small coefficient of thermal expansion.
(0 × 10 −6 / ° C.), heat is applied to the insulating base and the light-transmitting resin lid after the light-transmitting resin lid is joined to the insulating base via the sealing material. And the heat generates a large thermal stress between the two, and the thermal stress causes the light-transmissive resin lid to separate from the insulating base, or to cause cracks or cracks in the insulating base, and as a result, The airtightness of the container formed of the insulating base and the translucent resin lid is broken, and a defect that the solid-state imaging device accommodated in the container cannot be operated normally and stably for a long period of time is induced.

【0008】本発明は上述の諸欠点に鑑み案出されたも
ので、光学的画像を固体撮像素子に照射結像させる蓋体
を強靱とするととに固体撮像素子を収容する容器の気密
封止を完全とし、長期間にわたって固体撮像素子に光学
的画像に対応する正確な光電変換を起こさせることがで
きる固体撮像素子収納用パッケージを提供することにあ
る。
The present invention has been devised in view of the above-mentioned drawbacks, and has a tough lid for irradiating and imaging an optical image on a solid-state imaging device and hermetically sealing a container for accommodating the solid-state imaging device. An object of the present invention is to provide a package for housing a solid-state imaging device that can make the solid-state imaging device perform accurate photoelectric conversion corresponding to an optical image over a long period of time.

【0009】[0009]

【課題を解決するための手段】本発明は、固体撮像素子
が搭載される絶縁基体と、該絶縁基体に封止材を介して
接合される透光性樹脂蓋体とから成り、内部に固体撮像
素子を収容する固体撮像素子収納用パッケージであっ
て、前記透光性樹脂蓋体の厚みが0.5mm乃至1.5
mmであることを特徴とするものである。
According to the present invention, there is provided an insulating base on which a solid-state imaging device is mounted, and a light-transmissive resin lid joined to the insulating base via a sealing material. A package for storing a solid-state imaging device for accommodating an imaging device, wherein the light-transmitting resin lid has a thickness of 0.5 mm to 1.5 mm.
mm.

【0010】また本発明は、前記透光性樹脂蓋体をポリ
カーボネート樹脂、ポリオレフィン樹脂、アクリル樹
脂、ポリメタクリル酸樹脂の少なくとも1種で形成する
ことを特徴とするものである。
The present invention is also characterized in that the translucent resin cover is formed of at least one of a polycarbonate resin, a polyolefin resin, an acrylic resin, and a polymethacrylic resin.

【0011】本発明の固体撮像素子収納用パッケージに
よれば、光学的画像を固体撮像素子に照射結像させる蓋
体をポリカーボネート樹脂やポリオレフィン樹脂、アク
リル樹脂、ポリメタクリル酸樹脂等の強靱な透光性樹脂
で形成したことから蓋体に外力が印加されても蓋体に欠
け等が発生することはなく、その結果、蓋体の一部が固
体撮像素子上に落下付着して固体撮像素子の光電変換に
悪影響を与えることは殆どなく、固体撮像素子に光学的
画像に対応する正確な光電変換を起こさせることが可能
となる。
According to the package for storing a solid-state imaging device of the present invention, the lid for irradiating and forming an optical image on the solid-state imaging device is made of a tough light-transmitting material such as a polycarbonate resin, a polyolefin resin, an acrylic resin, and a polymethacrylic resin. Even when an external force is applied to the lid, the lid does not become chipped or the like due to being formed of the conductive resin, and as a result, a part of the lid falls and adheres to the solid-state imaging device, and There is almost no adverse effect on the photoelectric conversion, and it is possible to cause the solid-state imaging device to perform accurate photoelectric conversion corresponding to the optical image.

【0012】また本発明の固体撮像素子収納用パッケー
ジによれば、ポリカーボネート樹脂やポリオレフィン樹
脂、アクリル樹脂、ポリメタクリル酸樹脂等の透光性樹
脂から成る蓋体の厚みを0.5mm〜1.5mmの範囲
としたことからこの蓋体を封止材を介して絶縁基体に接
合させた後、絶縁基体と蓋体に熱が印加された場合、蓋
体と絶縁基体との間の両者の熱膨張係数の相違に起因す
る熱応力が発生するが、該熱応力は蓋体の接合部が適度
に変形することによって吸収され、その結果、蓋体が絶
縁基体より剥離したり、絶縁基体にクラックや割れ等が
発生したりするのが有効に防止され、絶縁基体と蓋体と
から成る容器の気密封止を良好とし、容器内部に収容す
る固体撮像素子を長期間にわたり正常、且つ安定に作動
させることも可能となる。
Further, according to the package for housing a solid-state imaging device of the present invention, the thickness of the lid made of a light-transmitting resin such as polycarbonate resin, polyolefin resin, acrylic resin, polymethacrylic acid resin is 0.5 mm to 1.5 mm. When this cover is joined to the insulating base via the sealing material, and heat is applied to the insulating base and the cover, the thermal expansion of both the cover and the insulating base occurs. Thermal stress due to the difference in coefficient is generated, but the thermal stress is absorbed by the joint of the lid being appropriately deformed, and as a result, the lid is peeled off from the insulating base, cracks or The occurrence of cracks and the like is effectively prevented, the hermetic sealing of the container composed of the insulating base and the lid is improved, and the solid-state imaging device accommodated in the container is operated normally and stably for a long period of time. Also possible It made.

【0013】[0013]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明の固体撮像素子収納用
パッケージの一実施例を示し、1は絶縁基体、2は透光
性樹脂蓋体である。この絶縁基体1と透光性樹脂蓋体2
とで固体撮像素子3を収容するための容器4が構成され
る。
Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for accommodating a solid-state imaging device according to the present invention, wherein 1 is an insulating base, and 2 is a translucent resin lid. The insulating base 1 and the transparent resin lid 2
A container 4 for accommodating the solid-state imaging device 3 is configured by the above.

【0014】前記絶縁基体1は、その上面中央部に固体
撮像素子を搭載するための凹部1aが形成されており、
該凹部1a底面には固体撮像素子3がエポキシ樹脂等の
樹脂性接着剤を介して接着固定される。
The insulating substrate 1 has a concave portion 1a for mounting a solid-state image sensor at the center of the upper surface thereof.
The solid-state imaging device 3 is bonded and fixed to the bottom surface of the concave portion 1a via a resinous adhesive such as an epoxy resin.

【0015】前記絶縁基体1は、エポキシ樹脂に熱膨張
係数が小さいシリカ等のフィラーを含有させた有機樹脂
や、酸化アルミニウム質焼結体、ムライト質焼結体、窒
化アルミニウム質焼結体、炭化珪素質焼結体、ガラスー
セラミック焼結体等のセラミックスから成り、例えば、
有機樹脂から成る場合、所定のモールド金型内にシリカ
フィラーを含有するエポキシ樹脂を充填するとともに該
充填されたエポキシ樹脂を150℃〜200℃の温度で
熱硬化させることによって製作される。
The insulating substrate 1 is made of an organic resin containing a filler such as silica having a small thermal expansion coefficient in an epoxy resin, an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, It consists of ceramics such as a silicon-based sintered body and a glass-ceramic sintered body.
When it is made of an organic resin, it is manufactured by filling a predetermined mold with an epoxy resin containing a silica filler and thermally curing the filled epoxy resin at a temperature of 150 ° C to 200 ° C.

【0016】なお、前記絶縁基体1に含有されたシリカ
フィラーは、絶縁基体1の熱伝導率を大きなものとする
とともに絶縁基体1の熱膨張係数を固体撮像素子3の熱
膨張係数(2.5×10-6/℃〜3.5×10-6/℃)
に近似させる作用をなし、絶縁基体1の熱膨張係数はシ
リカフィラーを70重量%〜90重量%含有させるとに
よって10×10-6/℃〜20×10-6/℃程度とな
る。
The silica filler contained in the insulating substrate 1 increases the thermal conductivity of the insulating substrate 1 and reduces the coefficient of thermal expansion of the insulating substrate 1 by the coefficient of thermal expansion (2.5%) of the solid-state imaging device 3. × 10 -6 /℃~3.5×10 -6 / ℃)
And the thermal expansion coefficient of the insulating substrate 1 becomes about 10 × 10 −6 / ° C. to 20 × 10 −6 / ° C. by containing 70% by weight to 90% by weight of the silica filler.

【0017】また前記絶縁基体1には、その内端部を絶
縁基体1の凹部1a内側に露出させるようにして、また
外端部を絶縁基体1の外側に突出させるようにして複数
のリード端子5が取着されており、該リード端子5の内
端部には固体撮像素子3の各電極がボンディングワイヤ
ー6を介して電気的に接続されるとともに絶縁基体1の
外側に突出する部位は外部電気回路に接続される。
A plurality of lead terminals are provided on the insulating base 1 such that an inner end thereof is exposed inside the concave portion 1a of the insulating base 1 and an outer end protrudes outside the insulating base 1. Each electrode of the solid-state imaging device 3 is electrically connected to the inner end of the lead terminal 5 via a bonding wire 6 and a portion protruding outside the insulating base 1 is attached to the outside. Connected to electrical circuit.

【0018】前記リード端子5は固体撮像素子3の各電
極を外部電気回路に電気的に接続させる作用をなし、リ
ード端子5の外端部を外部電気回路に接続させれば固体
撮像素子3の各電極はボンディングワイヤー6及びリー
ド端子5を介して外部電気回路と電気的に接続されるこ
ととなる。
The lead terminals 5 serve to electrically connect the electrodes of the solid-state image sensor 3 to an external electric circuit. If the outer end of the lead terminal 5 is connected to an external electric circuit, the lead terminals 5 of the solid-state image sensor 3 can be connected. Each electrode is electrically connected to an external electric circuit via the bonding wire 6 and the lead terminal 5.

【0019】前記リード端子5は例えば、鉄ーニッケル
ーコバルト合金等の金属材料から成り、鉄ーニッケルー
コバルト合金等から成るインゴット(塊)に適当な圧延
加工や打ち抜き加工等を施すことによって所定の形状に
製作される。
The lead terminal 5 is made of, for example, a metal material such as an iron-nickel-cobalt alloy, and is subjected to a predetermined rolling or punching process on an ingot made of an iron-nickel-cobalt alloy or the like. It is manufactured in the shape of

【0020】また前記リード端子5は、エポキシ樹脂を
所定のモールド金型内に注入し、絶縁基体1を製作する
際にモールド金型内の所定位置に予めセットしておくこ
とによってその内端部を絶縁基体1の凹部1a内側に露
出するように、また外端部を絶縁基体1の外側に突出す
るようにして絶縁基体1に一体的に取着される。
The lead terminal 5 is formed by injecting an epoxy resin into a predetermined mold and setting the lead terminal 5 at a predetermined position in the mold at the time of manufacturing the insulating base 1 so that the inner end of the lead terminal 5 can be formed. Are integrally attached to the insulating base 1 such that the inner end of the insulating base 1 is exposed inside the concave portion 1a and the outer end of the base 1 projects outside the insulating base 1.

【0021】前記リード端子5が取着された絶縁基体1
は、更にその上面に透光性樹脂蓋体2が封止材7を介し
て取着され、透光性樹脂蓋体2で絶縁基体1の凹部1a
を塞ぎ、絶縁基体1と透光性樹脂蓋体2とから成る容器
4内部を気密に封止することによって容器4の内部に固
体撮像素子3が気密に収容される。
The insulating substrate 1 to which the lead terminals 5 are attached
Further, a light-transmitting resin lid 2 is attached to the upper surface of the insulating base 1 via a sealing material 7, and the light-transmitting resin lid 2 is
The solid-state imaging device 3 is hermetically accommodated inside the container 4 by hermetically sealing the inside of the container 4 including the insulating base 1 and the translucent resin lid 2.

【0022】前記透光性樹脂蓋体2はポリカーボネート
樹脂やポリオレフィン樹脂、アクリル樹脂、ポリメタク
リル酸樹脂等の樹脂から成り、該透光性樹脂蓋体2は絶
縁基体1の凹部1aを気密に塞ぐとともに外部の光学的
画像を凹部1a内に透過させて固体撮像素子3に照射結
像させるための窓部材として作用する。
The translucent resin lid 2 is made of a resin such as a polycarbonate resin, a polyolefin resin, an acrylic resin, or a polymethacrylic resin, and the translucent resin lid 2 hermetically closes the recess 1a of the insulating base 1. At the same time, it functions as a window member for transmitting an external optical image into the concave portion 1 a and irradiating and forming an image on the solid-state imaging device 3.

【0023】前記ポリカーボネート樹脂やポリオレフィ
ン樹脂、アクリル樹脂、ポリメタクリル酸樹脂等の樹脂
から成る透光性樹脂蓋体2は強靱であることから、透光
性樹脂蓋体2を絶縁基体1に接合させる際等において外
力(衝撃力)が印加されても該外力によって透光性樹脂
蓋体2の一部に欠け等が発生することはなく、その結
果、透光性樹脂蓋体2の一部が固体撮像素子3上に落下
付着して固体撮像素子3の光電変換に悪影響を与えるこ
とは殆どなく、固体撮像素子3に光学的画像に対応する
正確な光電変換を起こさせることが可能となる。
Since the light-transmitting resin cover 2 made of a resin such as the polycarbonate resin, polyolefin resin, acrylic resin, or polymethacrylic resin is tough, the light-transmitting resin cover 2 is bonded to the insulating base 1. Even when an external force (impact force) is applied in some cases, the external force does not cause a part of the light-transmitting resin lid 2 to be chipped. As a result, a part of the light-transmitting resin lid 2 is There is almost no adverse effect on the photoelectric conversion of the solid-state imaging device 3 by dropping and adhering onto the solid-state imaging device 3, and it is possible to cause the solid-state imaging device 3 to perform accurate photoelectric conversion corresponding to an optical image.

【0024】また前記ポリカーボネート樹脂やポリオレ
フィン樹脂、アクリル樹脂、ポリメタクリル酸樹脂等の
樹脂から成る透光性樹脂蓋体2はその厚みが0.5mm
乃至2mmの範囲であり、透光性樹脂蓋体2の機械的強
度が適度な強度となっていることから、外力が印加され
ても透光性樹脂蓋体2に割れ等が発生することはなく、
また透光性樹脂蓋体2を封止材7を介して絶縁基体1に
接合させた後、絶縁基体1と透光性樹脂蓋体2に熱が印
加された場合、透光性樹脂蓋体2と絶縁基体1との間の
両者の熱膨張係数の相違に起因する熱応力が発生する
が、該熱応力は透光性樹脂蓋体2の接合部が適度に変形
することによって吸収され、その結果、透光性樹脂蓋体
2にうねりが形成されたり、透光性樹脂蓋体2が絶縁基
体1より剥離したり、絶縁基体1にクラックや割れ等が
発生したりすることはなく、透光性樹脂蓋体2を平坦と
して、かつ絶縁基体1と透光性樹脂蓋体2とから成る容
器4の気密封止を良好とし、容器4内部に収容する固体
撮像素子3を長期間にわたり正常、且つ安定に作動させ
ることが可能となる。
The translucent resin cover 2 made of a resin such as the polycarbonate resin, polyolefin resin, acrylic resin, and polymethacrylic acid resin has a thickness of 0.5 mm.
Since the mechanical strength of the light-transmitting resin lid 2 is appropriate, the light-transmitting resin lid 2 does not crack even when an external force is applied. Not
When the light-transmitting resin lid 2 is bonded to the insulating base 1 via the sealing material 7 and then heat is applied to the insulating base 1 and the light-transmitting resin lid 2, the light-transmitting resin lid 2 2 and the insulating base 1 generate thermal stress due to the difference in the coefficient of thermal expansion between them, and the thermal stress is absorbed by the joint of the translucent resin lid 2 being appropriately deformed, As a result, no undulation is formed on the translucent resin lid 2, the translucent resin lid 2 is not separated from the insulating base 1, and cracks and cracks are not generated in the insulating base 1. The translucent resin lid 2 is flattened, the container 4 composed of the insulating base 1 and the translucent resin lid 2 is airtightly sealed, and the solid-state imaging device 3 housed in the container 4 is kept for a long time. It is possible to operate normally and stably.

【0025】なお、前記透光性樹脂蓋体2はその厚みが
0.5mm未満であると透光性樹脂蓋体2の機械的強度
が低下し、外力印加によって割れ等が容易に発生して固
体撮像素子3を気密に収容することができなくなるとと
もに透光性樹脂蓋体2と絶縁基体1との熱膨張係数の相
違に起因する熱応力によって透光性樹脂蓋体2に多量の
うねりが形成され、透光性樹脂蓋体2を介して固体撮像
素子3に照射される光学的画像に歪みが生じ、固体撮像
素子3に光学的画像に対応する正確な光電変換を起こさ
せることができなくなってしまう。また厚みが1.5m
mを超えると透光性樹脂蓋体2を封止材7を介して絶縁
基体1に接合させた後、絶縁基体1と透光性樹脂蓋体2
に熱が印加されるとその熱によって両者間に大きな熱応
力が発生するとともに該熱応力によって透光性樹脂蓋体
2が絶縁基体1より剥離したり、絶縁基体1にクラック
や割れ等が発生したりして容器4の気密封止が破れ、容
器4内部に収容する固体撮像素子3を長期間にわたり正
常、且つ安定に作動させることができなくなってしま
う。従って、前記透光性樹脂蓋体2はその厚みが0.5
mm〜1.5mmの範囲に特定される。
If the thickness of the light-transmitting resin lid 2 is less than 0.5 mm, the mechanical strength of the light-transmitting resin lid 2 is reduced, and cracks or the like are easily generated by application of an external force. The solid-state imaging device 3 cannot be housed in an airtight manner, and a large amount of undulations in the light-transmitting resin lid 2 due to thermal stress caused by a difference in thermal expansion coefficient between the light-transmitting resin lid 2 and the insulating base 1. The optical image formed and irradiated on the solid-state imaging device 3 via the translucent resin lid 2 causes distortion, and the solid-state imaging device 3 can cause accurate photoelectric conversion corresponding to the optical image. Will be gone. The thickness is 1.5m
m, the translucent resin lid 2 is bonded to the insulating base 1 via the sealing material 7 and then the insulating base 1 and the translucent resin lid 2 are joined.
When heat is applied to the substrate, the heat generates a large thermal stress between the two, and the thermal stress causes the translucent resin lid 2 to peel off from the insulating base 1 and to cause cracks and cracks in the insulating base 1. As a result, the hermetic sealing of the container 4 is broken, and the solid-state imaging device 3 accommodated in the container 4 cannot be normally and stably operated for a long period of time. Therefore, the transparent resin lid 2 has a thickness of 0.5
mm to 1.5 mm.

【0026】また前記透光性樹脂蓋体2はポリカーボネ
ート樹脂やポリオレフィン樹脂、アクリル樹脂、ポリメ
タクリル酸樹脂等の樹脂前駆体を用いて厚さが0.5m
m〜1.5mmの広面積の板材を形成し、しかる後、こ
の板材に適当な切断加工を施すことによって所定の形状
に製作される。
The light-transmitting resin cover 2 is made of a resin precursor such as a polycarbonate resin, a polyolefin resin, an acrylic resin, or a polymethacrylic acid resin, and has a thickness of 0.5 m.
A plate material having a wide area of m to 1.5 mm is formed, and thereafter, the plate material is appropriately cut to produce a predetermined shape.

【0027】更に前記ポリカーボネート樹脂やポリオレ
フィン樹脂、アクリル樹脂、ポリメタクリル酸樹脂等の
樹脂から成る透光性樹脂蓋体2はガラスに比較して軽量
であることから固体撮像装置の軽量化に貢献することも
できる。
Further, the light-transmitting resin cover 2 made of a resin such as the polycarbonate resin, the polyolefin resin, the acrylic resin, and the polymethacrylic acid resin is lighter in weight than glass, which contributes to the weight reduction of the solid-state imaging device. You can also.

【0028】前記透光性樹脂蓋体2はまた絶縁基体1の
上面に封止材7を介して接合され、該封止材7として
は、例えばビスフェノールA型エポキシ樹脂、ノボラッ
ク型エポキシ樹脂、グリシジルエステル型エポキシ樹脂
等のエポキシ樹脂にアミン系硬化剤、イミダゾール系硬
化剤、酸無水物系硬化剤等の硬化剤を、更にはシリカ、
マイカ、タルク等の無機質粒子やゴム等の有機素粒子等
から成る充填剤を添加した樹脂接着剤が使用される。
The translucent resin lid 2 is also joined to the upper surface of the insulating base 1 via a sealing material 7, which may be made of, for example, bisphenol A type epoxy resin, novolak type epoxy resin, glycidyl. An amine type curing agent, an imidazole type curing agent, a curing agent such as an acid anhydride type curing agent for an epoxy resin such as an ester type epoxy resin, and further silica,
A resin adhesive to which a filler composed of inorganic particles such as mica and talc and organic particles such as rubber is added is used.

【0029】前記封止材7を介して絶縁基体1と透光性
樹脂蓋体2とを接合するには、前記透光性樹脂蓋体2の
下面外周部に、樹脂接着剤をスクリーン印刷法により枠
状に印刷塗布し、次に前記透光性樹脂蓋体2を絶縁基体
1上面に両者の間に樹脂接着剤を挟むようにして載置さ
せ、最後にこれを120℃〜150℃の温度で0.5〜
5時間、加熱処理し、樹脂接着剤を熱硬化させることに
よって行われる。
In order to join the insulating base 1 and the translucent resin lid 2 via the sealing material 7, a resin adhesive is applied to the outer periphery of the lower surface of the translucent resin lid 2 by a screen printing method. Then, the translucent resin lid 2 is placed on the upper surface of the insulating substrate 1 so as to sandwich a resin adhesive between them, and finally the transparent resin lid 2 is heated at a temperature of 120 ° C. to 150 ° C. 0.5 ~
The heat treatment is performed for 5 hours to thermally cure the resin adhesive.

【0030】かくして、上述の固体撮像素子収納用パッ
ケージによれば、絶縁基体1の凹部1a底面に固体撮像
素子3をエポキシ樹脂等の樹脂から成る接着剤を介して
接着固定するととに該固体撮像素子3の各電極をボンデ
ィングワイヤー6を介してリード端子5に電気的に接続
し、しかる後、絶縁基体1の上面に透光性樹脂蓋体2を
封止材7を介して接合させ、絶縁基体1と透光性樹脂蓋
体2とから成る容器4内部に固体撮像素子3を収容する
ことによって製品としての固体撮像装置となる。
Thus, according to the package for storing the solid-state imaging device described above, the solid-state imaging device 3 is bonded and fixed to the bottom surface of the concave portion 1a of the insulating base 1 via an adhesive made of a resin such as an epoxy resin. Each electrode of the element 3 is electrically connected to a lead terminal 5 via a bonding wire 6. Thereafter, the light-transmitting resin lid 2 is bonded to the upper surface of the insulating base 1 via a sealing material 7, and A solid-state imaging device as a product is obtained by housing the solid-state imaging device 3 inside the container 4 including the base 1 and the translucent resin lid 2.

【0031】なお、本発明は上述の実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能であり、例えば、上述の実施例におい
ては絶縁基板1を有機樹脂で形成した場合について説明
したが、絶縁基体1を熱膨張係数が3×10-6/℃〜1
0×10-6/℃程度の酸化アルミニウム質焼結体やムラ
イト質焼結体、窒化アルミニウム質焼結体、炭化珪素質
焼結体、ガラスーセラミック焼結体等のセラミックスで
形成してもよい。
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. Was formed using an organic resin, but the thermal expansion coefficient of the insulating base 1 was 3 × 10 −6 / ° C. to 1
Even when formed of ceramics such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, a glass-ceramic sintered body of about 0 × 10 −6 / ° C. Good.

【0032】[0032]

【発明の効果】本発明の固体撮像素子収納用パッケージ
によれば、光学的画像を固体撮像素子に照射結像させる
蓋体をポリカーボネート樹脂やポリオレフィン樹脂、ア
クリル樹脂、ポリメタクリル酸樹脂等の強靱な透光性樹
脂で形成したことから蓋体に外力が印加されても蓋体に
欠け等が発生することはなく、その結果、蓋体の一部が
固体撮像素子上に落下付着して固体撮像素子の光電変換
に悪影響を与えることは殆どなく、固体撮像素子に光学
的画像に対応する正確な光電変換を起こさせることが可
能となる。
According to the package for storing a solid-state imaging device of the present invention, a lid for irradiating and imaging an optical image on the solid-state imaging device is made of a tough resin such as a polycarbonate resin, a polyolefin resin, an acrylic resin, or a polymethacrylic resin. Since the cover is made of a light-transmitting resin, the cover does not become chipped even when an external force is applied to the cover. There is almost no adverse effect on the photoelectric conversion of the device, and it is possible to cause the solid-state imaging device to perform accurate photoelectric conversion corresponding to the optical image.

【0033】また本発明の固体撮像素子収納用パッケー
ジによれば、ポリカーボネート樹脂やポリオレフィン樹
脂、アクリル樹脂、ポリメタクリル酸樹脂等の透光性樹
脂から成る蓋体の厚みを0.5mm〜1.5mmの範囲
としたことからこの蓋体を封止材を介して絶縁基体に接
合させた後、絶縁基体と蓋体に熱が印加された場合、蓋
体と絶縁基体との間の両者の熱膨張係数の相違に起因す
る熱応力が発生するが、該熱応力は蓋体の接合部が適度
に変形することによって吸収され、その結果、蓋体が絶
縁基体より剥離したり、絶縁基体にクラックや割れ等が
発生したりするのが有効に防止され、絶縁基体と蓋体と
から成る容器の気密封止を良好とし、容器内部に収容す
る固体撮像素子を長期間にわたり正常、且つ安定に作動
させることも可能となる。
According to the package for storing a solid-state image sensor of the present invention, the thickness of the lid made of a light-transmitting resin such as polycarbonate resin, polyolefin resin, acrylic resin, polymethacrylic acid resin is 0.5 mm to 1.5 mm. When this cover is joined to the insulating base via the sealing material, and heat is applied to the insulating base and the cover, the thermal expansion of both the cover and the insulating base occurs. Thermal stress due to the difference in coefficient is generated, but the thermal stress is absorbed by the joint of the lid being appropriately deformed, and as a result, the lid is peeled off from the insulating base, cracks or The occurrence of cracks and the like is effectively prevented, the hermetic sealing of the container composed of the insulating base and the lid is improved, and the solid-state imaging device accommodated in the container is operated normally and stably for a long period of time. Also possible It made.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の固体撮像素子収納用パッケージの一実
施例を示す断面図である。
FIG. 1 is a cross-sectional view illustrating an embodiment of a package for storing a solid-state imaging device according to the present invention.

【符号の説明】[Explanation of symbols]

1・・・・・・・・・絶縁基体 2・・・・・・・・・透光性樹脂蓋体 3・・・・・・・・・固体撮像素子 4・・・・・・・・・容器 5・・・・・・・・・リード端子 7・・・・・・・・・封止材 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Translucent resin lid 3 ... Solid-state imaging device 4 ...・ Container 5 ・ ・ ・ ・ ・ ・ ・ ・ ・ Lead terminal 7 ・ ・ ・ ・ ・ ・ ・ ・ ・ Sealant

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H04N 5/335 H01L 31/02 B ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H04N 5/335 H01L 31/02 B

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】固体撮像素子が搭載される絶縁基体と、該
絶縁基体に封止材を介して接合される透光性樹脂蓋体と
から成り、内部に固体撮像素子を収容する固体撮像素子
収納用パッケージであって、前記透光性樹脂蓋体の厚み
が0.5mm乃至1.5mmであることを特徴とする固
体撮像素子収納用パッケージ。
1. A solid-state imaging device comprising: an insulating base on which a solid-state imaging device is mounted; and a light-transmissive resin lid joined to the insulating base via a sealing material. A package for storing a solid-state imaging device, wherein the thickness of the translucent resin lid is 0.5 mm to 1.5 mm.
【請求項2】前記透光性樹脂蓋体がポリカーボネート樹
脂、ポリオレフィン樹脂、アクリル樹脂、ポリメタクリ
ル酸樹脂の少なくとも1種より形成されていることを特
徴とする請求項1記載の固体撮像素子収納用パッケー
ジ。
2. The solid-state image sensor according to claim 1, wherein the light-transmissive resin cover is formed of at least one of a polycarbonate resin, a polyolefin resin, an acrylic resin, and a polymethacrylic resin. package.
JP9008753A 1997-01-21 1997-01-21 Package for housing solid state imaging element Pending JPH10209316A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9008753A JPH10209316A (en) 1997-01-21 1997-01-21 Package for housing solid state imaging element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9008753A JPH10209316A (en) 1997-01-21 1997-01-21 Package for housing solid state imaging element

Publications (1)

Publication Number Publication Date
JPH10209316A true JPH10209316A (en) 1998-08-07

Family

ID=11701696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9008753A Pending JPH10209316A (en) 1997-01-21 1997-01-21 Package for housing solid state imaging element

Country Status (1)

Country Link
JP (1) JPH10209316A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100463203C (en) * 2005-03-24 2009-02-18 台湾积体电路制造股份有限公司 Semiconductor device and its forming method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100463203C (en) * 2005-03-24 2009-02-18 台湾积体电路制造股份有限公司 Semiconductor device and its forming method

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