JPH10204261A - Epoxy resin composition for semiconductor sealing and resin sealed semiconductor device - Google Patents
Epoxy resin composition for semiconductor sealing and resin sealed semiconductor deviceInfo
- Publication number
- JPH10204261A JPH10204261A JP9014193A JP1419397A JPH10204261A JP H10204261 A JPH10204261 A JP H10204261A JP 9014193 A JP9014193 A JP 9014193A JP 1419397 A JP1419397 A JP 1419397A JP H10204261 A JPH10204261 A JP H10204261A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- semiconductor
- inorganic filler
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、フルモールド型パ
ワーＴＲＳ（ＦＭ型Ｐ−ＴＲＳ）のようなマーク上下面
（表裏面）のレジン厚が異なるフルモールド型パッケー
ジをボイドレスにトランスファ成形できる半導体封止用
エポキシ樹脂組成物及びこれで封止してなる樹脂封止型
半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package capable of transfer molding a full-mold type package such as a full-mold type power TRS (FM type P-TRS) having different resin thicknesses on upper and lower surfaces (front and back) of a mark into a voidless. The present invention relates to an epoxy resin composition for stopping and a resin-sealed semiconductor device sealed with the epoxy resin composition.
【０００２】[0002]
【従来の技術】現在、ＬＳＩ、ＩＣ、ＴＲＳ等の半導体
の封止には、コスト、量産性及び信頼性の点からエポキ
シ樹脂組成物によるトランスファー成形方式が採用され
ている。2. Description of the Related Art At present, for molding semiconductors such as LSIs, ICs, and TRSs, a transfer molding method using an epoxy resin composition is employed in view of cost, mass productivity and reliability.
【０００３】最近においては、これら半導体装置はＤ−
ＲＡＭ、Ｓ−ＲＡＭ等のメモリー素子に代表される高集
積化及びパワーＩＣ（Ｐ−ＩＣ）、パワーＴＲＳ（Ｐ−
ＴＲＳ）等の高出力化等の傾向にある。ところで、高出
力化の半導体装置は封止材で一部又は全部を埋め込むモ
ールド製品（フルモールド型：ＦＭ型）が主流となって
いる。これらＦＭ型ＴＲＳ、ＦＭ型ＩＣ等のパッケージ
構造は、パッケージ上面（マーク表面）、パッケージ下
面（マーク裏面）でモールドレジン厚みが異なってい
る。そのため、それらＦＭ型ＴＲＳ、ＩＣ等をトランス
ファー成形した際、成形品にウエルドマーク（キャビテ
ィー内をレジンで充填する際に、インサートの上下に分
かれて流動する、上側レジン、下側レジンの交わる箇所
に生ずる一種のボイド）が生じ、特性不良（耐電圧の低
下）を起こす等の問題があった。[0003] Recently, these semiconductor devices have become
High integration and power IC (P-IC) represented by memory elements such as RAM and S-RAM, and power TRS (P-
(TRS) and the like. By the way, a high-output semiconductor device is mainly a molded product (full mold type: FM type) in which a part or the whole is embedded with a sealing material. In these package structures such as the FM type TRS and the FM type IC, the mold resin thickness is different between the package upper surface (mark surface) and the package lower surface (mark back surface). Therefore, when transfer molding these FM-type TRSs, ICs, etc., a welded mark is formed on the molded product (when filling the interior of the cavity with resin, the upper and lower resins intersect and flow at the top and bottom of the insert. (A kind of voids), which causes problems such as poor characteristics (reduced withstand voltage).
【０００４】[0004]
【発明が解決しようとする課題】本発明は、ＦＭ型Ｐ−
ＴＲＳのようなマーク上、下面（表、裏面）のレジン厚
さが異なるフルモールド型パッケージにおいて前記した
ウエルドマークを発生しない半導体体封止用エポキシ樹
脂組成物を提供することを目的とする。SUMMARY OF THE INVENTION The present invention relates to an FM type P-
It is an object of the present invention to provide an epoxy resin composition for encapsulating a semiconductor body which does not generate the above-mentioned weld mark in a full mold type package having different resin thicknesses on the upper and lower surfaces (front and rear surfaces) of the mark such as TRS.
【０００５】本発明はまた、上記のウエルドマークのな
い樹脂封止型半導体装置を提供することを目的とする。Another object of the present invention is to provide a resin-sealed semiconductor device without the above-mentioned weld mark.
【０００６】[0006]
【課題を解決するための手段】本発明者らは前記課題を
解決するために鋭意研究を重ねた結果、無機充填剤とし
て特定の粒径分布を有するものを特定の割合で配合した
エポキシ樹脂組成物を用いて半導体を封止することによ
り、ウエルドのない樹脂封止型半導体装置が得られるこ
とを見出し、この知見に基づいて本発明を完成するに至
った。Means for Solving the Problems As a result of intensive studies to solve the above-mentioned problems, the present inventors have found that an epoxy resin composition having a specific particle size distribution as an inorganic filler is compounded at a specific ratio. It has been found that a resin-sealed semiconductor device having no weld can be obtained by sealing a semiconductor using an object, and the present invention has been completed based on this finding.
【０００７】すなわち、本発明は、エポキシ樹脂と硬化
剤と無機充填剤を必須成分として含有する半導体封止用
エポキシ樹脂組成物において、粒径が７５〜１５０μｍ
の粒子が１５〜５０重量％である無機充填剤を組成物全
体に対して６０〜９５重量％配合したことを特徴とする
半導体封止用エポキシ樹脂組成物を提供するものであ
る。That is, according to the present invention, there is provided an epoxy resin composition for semiconductor encapsulation containing an epoxy resin, a curing agent and an inorganic filler as essential components, having a particle size of 75 to 150 μm.
The present invention provides an epoxy resin composition for semiconductor encapsulation, wherein an inorganic filler having 15 to 50% by weight of particles of the above is blended in an amount of 60 to 95% by weight based on the whole composition.
【０００８】また、本発明は、上記の半導体封止用エポ
キシ樹脂組成物で封止してなることを特徴とする樹脂封
止型半導体装置を提供するものである。The present invention also provides a resin-sealed semiconductor device characterized by being sealed with the epoxy resin composition for semiconductor sealing described above.
【０００９】[0009]
【発明の実施の形態】本発明に用いられるエポキシ樹脂
は、１分子中にエポキシ基を２個以上有する化合物であ
れば特に制限はなく、モノマー、オリゴマー、ポリマー
を問わないが、例えば、ビフェニル型のエポキシ化合
物、ビスフェノール型のエポキシ化合物、フェノールノ
ボラック型エポキシ樹脂、クレゾールノボラック型エポ
キシ樹脂、トリフェノールメタン型エポキシ化合物、ア
ルキル変性トリフェノールメタン型エポキシエポキシ化
合物、トリアジン核含有エポキシ樹脂等が挙げられる。
これらは１種で又は２種以上を混合して用いられる。BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention is not particularly limited as long as it is a compound having two or more epoxy groups in one molecule, and may be any of a monomer, an oligomer and a polymer. Epoxy compounds, bisphenol-type epoxy compounds, phenol novolak-type epoxy resins, cresol novolak-type epoxy resins, triphenolmethane-type epoxy compounds, alkyl-modified triphenolmethane-type epoxy-epoxy compounds, and epoxy resins containing triazine nuclei.
These may be used alone or in combination of two or more.
【００１０】本発明に用いられる硬化剤としては特に制
限はないが、フェノール樹脂硬化剤が好ましく用いられ
る。フェノール樹脂硬化剤としては、フェノールノボラ
ック樹脂、クレゾールノボラック樹脂、ジシクロペンタ
ジエン変性フェノール樹脂、テルペン変性フェノール樹
脂、トリフェノールメタン化合物等が挙げられる。これ
らは１種で又は２種以上を混合して用いられる。The curing agent used in the present invention is not particularly limited, but a phenol resin curing agent is preferably used. Examples of the phenol resin curing agent include a phenol novolak resin, a cresol novolak resin, a dicyclopentadiene-modified phenol resin, a terpene-modified phenol resin, and a triphenolmethane compound. These may be used alone or in combination of two or more.
【００１１】これらの硬化剤の配合量は、エポキシ樹脂
のエポキシ基数と硬化剤の水酸基数の比が好ましくは
０．６〜１．４、更に好ましくは０．８〜１．２となる
ように配合する。The amount of these curing agents is such that the ratio of the number of epoxy groups of the epoxy resin to the number of hydroxyl groups of the curing agent is preferably 0.6 to 1.4, more preferably 0.8 to 1.2. Mix.
【００１２】本発明に用いられる無機充填剤としては、
結晶性シリカ粉、アルミナ粉、窒化ケイ素粉、溶融シリ
カ粉等が挙げられ、これらは１種で又は２種以上を混合
して用いられる。無機充填剤はその形状が角又は鈍角で
あるものを用いることが好ましい。The inorganic filler used in the present invention includes:
Examples thereof include crystalline silica powder, alumina powder, silicon nitride powder, and fused silica powder, and these may be used alone or as a mixture of two or more. It is preferable to use an inorganic filler whose shape is a corner or an obtuse angle.
【００１３】本発明に用いられる無機充填剤は、粒径が
７５〜１５０μｍの粒子が１５〜５０重量％、好ましく
は１５〜２５重量％である。粒径が７５〜１５０μｍの
粒子が１５重量％未満であるとウエルド部充填性が劣化
し、５０重量％を超えると一般的な流動性が劣化し好ま
しくない。残りの無機充填剤の粒径は通常７５μｍ未満
である。なお、粒径が７５〜１５０μｍの粒子の量は
「ＪＩＳ−Ｋ−６９１０４．５項 ふるい残分」に基づ
いて測定した。The inorganic filler used in the present invention contains 15 to 50% by weight, preferably 15 to 25% by weight of particles having a particle size of 75 to 150 μm. If the particles having a particle size of 75 to 150 μm are less than 15% by weight, the filling property of the weld portion is deteriorated, and if it exceeds 50% by weight, general fluidity is deteriorated, which is not preferable. The particle size of the remaining inorganic filler is usually less than 75 μm. The amount of particles having a particle diameter of 75 to 150 μm was measured based on “JIS-K-69104.5, sieve residue”.
【００１４】これらの無機充填剤は、全エポキシ樹脂組
成物中に６０〜９５重量％、好ましくは７０〜９０重量
％配合される。These inorganic fillers are blended in the entire epoxy resin composition in an amount of 60 to 95% by weight, preferably 70 to 90% by weight.
【００１５】本発明のエポキシ樹脂組成物には、必要に
応じ、硬化促進剤が配合される。硬化促進剤は、エポキ
シ樹脂とフェノール性水酸基を有する化合物の硬化反応
を促進するものであれば、特に制限はなく使用できる。
例えば、１，８−ジアザビシクロ（５，４，０）ウンデ
セン−７、トリエチレンジアミン、ベンジルジメチルア
ミン、ジメチルアミノエタノール、トリス（ジメチルア
ミノメチル）フェノール等の三級アミン類、２−メチル
イミダゾール、２−フェニルイミダゾール、２−ヘプタ
デシルイミダゾール等のイミダゾール類、トリブチルホ
スフィン、メチルジフェニルホスフィン、トリフェニル
ホスフィン、ジフェニルホスフィン、フェニルホスフィ
ン等の有機ホスフィン類、テトラフェニルホスホニウム
・テトラフェニルボレート、テトラフェニルホスホニウ
ム・エチルトリフェニルボーレート、テトラブチルホス
ホニウム・テトラブチルボレート等のテトラ置換ホスホ
ニウム・テトラ置換ボレート、２−エチル−４−メチル
イミダゾール・テトラフェニルボレート、Ｎ−メチルモ
ルホリン・テトラフェニルボレート等のテトラフェニル
ボロン塩等が挙げられる。[0015] The epoxy resin composition of the present invention may optionally contain a curing accelerator. The curing accelerator can be used without any particular limitation as long as it accelerates the curing reaction between the epoxy resin and the compound having a phenolic hydroxyl group.
For example, tertiary amines such as 1,8-diazabicyclo (5,4,0) undecene-7, triethylenediamine, benzyldimethylamine, dimethylaminoethanol, and tris (dimethylaminomethyl) phenol; 2-methylimidazole; Imidazoles such as phenylimidazole and 2-heptadecylimidazole; organic phosphines such as tributylphosphine, methyldiphenylphosphine, triphenylphosphine, diphenylphosphine and phenylphosphine; tetraphenylphosphonium / tetraphenylborate; tetraphenylphosphonium / ethyltriphenyl Borate, tetra-substituted phosphonium / tetra-substituted borate such as tetrabutyl phosphonium / tetrabutyl borate, 2-ethyl-4-methylimidazole te La tetraphenylborate, tetraphenyl boron salts such as N- methylmorpholine tetraphenylborate and the like.
【００１６】これらの硬化促進剤はエポキシ樹脂に対
し、好ましくは０．５〜１２．０重量％配合される。These curing accelerators are preferably added in an amount of 0.5 to 12.0% by weight based on the epoxy resin.
【００１７】本発明のエポキシ樹脂組成物には、その他
の添加剤として、カーボンブラック等の着色剤、天然ワ
ックス、合成ワックス、高級脂肪酸、高級脂肪酸金属
塩、エステル系ワックス等の離型剤、エポキシシラン、
アミノシラン、ビニルシラン、アルキルシラン等のシラ
ン系、有機チタネート等のチタン系、アルミニウムアル
コレート等のアルミニウム系のカップリング剤、シリコ
ーンオイル、ゴム等の低応力添加剤等を適宜配合して用
いることができる。また、酸化アンチモン、赤リン等の
化合物を配合して難燃化を図ることもできる。In the epoxy resin composition of the present invention, other additives such as a colorant such as carbon black, a release agent such as a natural wax, a synthetic wax, a higher fatty acid, a metal salt of a higher fatty acid, and an ester wax; Silane,
Aminosilanes, vinylsilanes, silanes such as alkylsilanes, etc., titanium-based such as organic titanates, aluminum-based coupling agents such as aluminum alcoholate, low-stress additives such as silicone oils and rubbers can be appropriately blended and used. . In addition, compounds such as antimony oxide and red phosphorus can be blended to achieve flame retardancy.
【００１８】なお、本発明の半導体封止用エポキシ樹脂
組成物は、その製造に際し、上述した成分の所定量を均
一に混合し、予め７０〜９５℃に加熱してあるニーダ
ー、ロール、エクストルーダー等で混練、押出、冷却、
粉砕する等の方法により得ることができる。The epoxy resin composition for encapsulating a semiconductor according to the present invention is prepared by uniformly mixing predetermined amounts of the above-mentioned components and manufacturing the epoxy resin composition at a temperature of 70 to 95 ° C. beforehand. Kneading, extrusion, cooling, etc.
It can be obtained by a method such as grinding.
【００１９】[0019]
【実施例】以下、本発明の実施例及びその比較例によっ
て本発明を更に具体的に説明するが、本発明はこれらの
実施例に限定されるものではない。EXAMPLES Hereinafter, the present invention will be described more specifically with reference to Examples of the present invention and Comparative Examples thereof, but the present invention is not limited to these Examples.
【００２０】実施例１〜３、比較例１〜２ 表１に示す各種の素材を用い、性状（材質、形状、粒径
分布）の異なる無機充填剤を用いたエポキシ樹脂組成物
（封止材）を作製した。Examples 1 to 3 and Comparative Examples 1 to 2 Epoxy resin compositions (sealing materials) using various materials shown in Table 1 and inorganic fillers having different properties (material, shape, particle size distribution) ) Was prepared.
【００２１】封止材の作製はまず各素材を予備混合（ド
ライブブレンド）した後、２軸ミキシングロール（ロー
ル表面温度約７０〜８０℃）で１０分間混練し、冷却後
粉砕機で微粒化した。For the preparation of the sealing material, each material was first premixed (drive blending), then kneaded with a biaxial mixing roll (roll surface temperature of about 70 to 80 ° C.) for 10 minutes, cooled and then pulverized by a pulverizer. .
【００２２】次に、得られた各封止材についてトランス
ファー成形機を用い、成形温度１８０℃、成形圧力７０
ｋｇｆ／ｃｍ2、硬化時間９０秒の条件でスパイラルフ
ローを測定した。また、島津製作所製高化式フローテス
ターにて１８０℃の溶融粘度を測定した。また、ＦＭ型
Ｐ−ＴＲＳ金型を用い、１８０℃、７０ｋｇｆ／ｃ
ｍ 2、９０秒の条件で実装ＦＭ型Ｐ−ＴＲＳを成形し、
成形品の表面を目視で観察し、０．１ｍｍφ以上のウエ
ルドマークの発生の有無を判定した。また、ＦＭ型Ｐ−
ＴＲＳを用い電気特性、耐湿性（ＰＣＴ、１０００ｈｒ
での不良発生状況）を測定した。結果を合わせて表２に
示す。Next, a transformer was used for each of the obtained sealing materials.
Using a fur molding machine, molding temperature 180 ° C, molding pressure 70
kgf / cmTwoSpiral fu with a curing time of 90 seconds
The low was measured. Also, Shimadzu's high-grade flow tester
The melt viscosity at 180 ° C. was measured with a thermometer. In addition, FM type
180 ° C, 70kgf / c using P-TRS mold
m Two, Molding the mounted FM type P-TRS under the conditions of 90 seconds,
Visually observe the surface of the molded product, and
The presence or absence of a mark was determined. In addition, FM type P-
Electrical characteristics and moisture resistance (PCT, 1000 hr) using TRS
Failure occurrence situation) was measured. Table 2 shows the results.
Show.
【００２３】図１は半導体封止用エポキシ樹脂組成物で
ＦＭ型Ｐ−ＴＲＳを封止する様子を示す断面模式図であ
り、１はリード線、２はヘッダー、３はチップ、４はワ
イヤーで、５はゲート、６はエアーベントである。金型
内にゲート５からエポキシ樹脂組成物（レジン）を流入
させる。ゲートより流入したレジンはマーク面７側とマ
ーク裏面８側の２つに別れて流動する。金型内の広いエ
リアＡはレジンの流速が早く、金型内の狭いエリアＢは
レジンの流速が遅いため、Ａ、Ｂを通ったレジンはＣで
交わり、Ｃの箇所にエアを抱き込んだボイドが発生す
る。このボイドを含んだ欠陥（一種の未充填）がウエル
ドマークである。得られた成形品の裏面を目視により観
察し、０．１ｍｍφ以上のウエルドマークの有無を判定
した。FIG. 1 is a schematic cross-sectional view showing how an FM-type P-TRS is sealed with an epoxy resin composition for semiconductor encapsulation, wherein 1 is a lead wire, 2 is a header, 3 is a chip, and 4 is a wire. 5 is a gate, 6 is an air vent. The epoxy resin composition (resin) flows into the mold from the gate 5. The resin flowing from the gate flows into two parts, the mark surface 7 side and the mark back surface 8 side. The large area A in the mold has a high resin flow velocity, and the narrow area B in the mold has a low resin flow velocity. Voids occur. The defect including the void (a kind of unfilled) is a weld mark. The back surface of the obtained molded product was visually observed to determine the presence or absence of a weld mark of 0.1 mmφ or more.
【００２４】[0024]
【表１】 [Table 1]
【００２５】[0025]
【表２】 [Table 2]
【００２６】[0026]
【発明の効果】本発明によりＦＭ型Ｐ−ＴＲＳのような
マーク上、下面（表、裏面）のレジン厚さが異なるフル
モールド型パッケージにおいてもウエルドマークを発生
しない半導体体封止用エポキシ樹脂組成物及びウエルド
マークのない樹脂封止型半導体装置を得ることができ
た。According to the present invention, an epoxy resin composition for encapsulating a semiconductor body which does not generate a weld mark even in a full mold type package having different resin thicknesses on the upper and lower surfaces (front and rear surfaces) such as FM type P-TRS. A resin-encapsulated semiconductor device having no object and no weld mark was obtained.
【図１】本発明の半導体封止用エポキシ樹脂組成物でＦ
Ｍ型Ｐ−ＴＲＳを封止する様子を示す断面模式図FIG. 1 shows an epoxy resin composition for semiconductor encapsulation of the present invention,
Cross-sectional schematic diagram showing a state of sealing an M-type P-TRS
【符号の説明】 １ リード線 ２ ヘッダー ３ チップ ４ ワイヤー ５ ゲート ６ エアーベント ７ マーク面 ８ マーク裏面 Ａ広いエリア Ｂ 狭いエリア Ｃ ウエルド発生箇所[Explanation of Signs] 1 Lead wire 2 Header 3 Chip 4 Wire 5 Gate 6 Air vent 7 Mark surface 8 Mark back surface A Wide area B Narrow area C Weld generation point
───────────────────────────────────────────────────── フロントページの続き (72)発明者 奈良 直紀 茨城県結城市大字鹿窪1772−１ 日立化成 工業株式会社下館工場内 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Naoki Nara, 172-1 Kakuroku, Yuki-shi, Ibaraki Pref.
Claims (4)
須成分として含有する半導体封止用エポキシ樹脂組成物
において、粒径が７５〜１５０μｍの粒子が１５〜５０
重量％である無機充填剤を組成物全体に対して６０〜９
５重量％配合したことを特徴とする半導体封止用エポキ
シ樹脂組成物。1. An epoxy resin composition for semiconductor encapsulation containing an epoxy resin, a curing agent and an inorganic filler as essential components, wherein particles having a particle size of 75 to 150 μm have a particle size of 15 to 50 μm.
% By weight of the inorganic filler is 60 to 9 based on the whole composition.
An epoxy resin composition for encapsulating a semiconductor, which is blended at 5% by weight.
求項１記載の半導体封止用エポキシ樹脂組成物。2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the shape of the inorganic filler is a corner or an obtuse angle.
粉、窒化ケイ素粉及び溶融シリカ粉から選ばれる１種又
は２種以上の無機充填剤である請求項１記載の半導体封
止用エポキシ樹脂組成物。3. The epoxy resin for semiconductor encapsulation according to claim 1, wherein the inorganic filler is one or more inorganic fillers selected from crystalline silica powder, alumina powder, silicon nitride powder and fused silica powder. Composition.
エポキシ樹脂組成物で封止してなることを特徴とする樹
脂封止型半導体装置。4. A resin-encapsulated semiconductor device which is encapsulated with the epoxy resin composition for encapsulating a semiconductor according to claim 1, 2 or 3.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9014193A JPH10204261A (en) | 1997-01-28 | 1997-01-28 | Epoxy resin composition for semiconductor sealing and resin sealed semiconductor device |
| TW087100248A TW495535B (en) | 1997-01-28 | 1998-01-09 | Epoxy resin composition for semiconductor sealing |
| US09/008,550 US6005030A (en) | 1997-01-28 | 1998-01-16 | Epoxy resin composition for semiconductor sealing and resin molded type semiconductor device sealed with the epoxy resin composition |
| MYPI98000199A MY116179A (en) | 1997-01-28 | 1998-01-16 | Epoxy resin composition for semiconductor sealing and resin molded type semiconductor device sealed with the epoxy resin composition |
| KR1019980001734A KR100274060B1 (en) | 1997-01-28 | 1998-01-21 | Epoxy resin composition for semiconductor sealing and resin molded type semiconductor device sealed with the epoxy resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9014193A JPH10204261A (en) | 1997-01-28 | 1997-01-28 | Epoxy resin composition for semiconductor sealing and resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10204261A true JPH10204261A (en) | 1998-08-04 |
Family
ID=11854296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9014193A Pending JPH10204261A (en) | 1997-01-28 | 1997-01-28 | Epoxy resin composition for semiconductor sealing and resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10204261A (en) |
-
1997
- 1997-01-28 JP JP9014193A patent/JPH10204261A/en active Pending
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