JPH10172974A - Plating method and its device for semiconductor wafer - Google Patents
Plating method and its device for semiconductor waferInfo
- Publication number
- JPH10172974A JPH10172974A JP8346597A JP34659796A JPH10172974A JP H10172974 A JPH10172974 A JP H10172974A JP 8346597 A JP8346597 A JP 8346597A JP 34659796 A JP34659796 A JP 34659796A JP H10172974 A JPH10172974 A JP H10172974A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- semiconductor wafer
- tank
- gravity
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電解めっき法を用
いて半導体ウエハ上にめっきを施す方法及びその装置に
関する。特に、半導体ウエハ上にバンプ電極を形成する
方法及びその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for plating a semiconductor wafer using an electrolytic plating method. In particular, the present invention relates to a method and an apparatus for forming a bump electrode on a semiconductor wafer.
【０００２】[0002]
【従来の技術】従来、ウエハ上にはんだめっきを施し、
はんだバンプを形成する技術では、例えば特開昭６２−
２６６８５１号公報に開示されている技術が知られてい
る。この技術によるはんだバンプの形成方法を図６に示
す。この技術では、ウエハ基板１１上にアルミパッド電
極１２及びパッシベーション膜１３を形成し、このパッ
シベーション膜１３上にバリアメタル１４を形成する。
そして、厚膜液状レジストやドライフィルムレジスト１
６を塗布及びラミネートを実施して現像した後、バリア
メタル１４を電極として電解めっきを施す。これにより
アルミパッド電極１２上にはんだバンプ電極１５を形成
する（図６（ａ））。続いて、厚膜液状レジストやドラ
イフィルムレジスト１６を剥離すると共に、バリアメタ
ル１４をエッチングして除去することにより図６（ｂ）
に示される構造が得られる。さらに、リフロー工程を経
て、図６（ｃ）に示されるようにな半球上のバンプ構造
が得られる。このようにしてはんだめっきによるはんだ
バンプ電極１５の形成を行うことができる。このような
はんだバンプの形成は、例えば図７に示す装置を用いて
行われる。即ち、めっき槽２１内にめっき液２３を入
れ、平板状のはんだ板（アノード）２２と平板状のウエ
ハ１１とをそれらの面の方向が略重力方向となるように
平行に対向配置してめっき液２３内に浸し、めっき液２
３をめっき槽２１の底部に設けられたスターラ２４にて
攪拌して層流を作り、めっき液２３を電着面に供給する
構成としている。2. Description of the Related Art Conventionally, solder plating is performed on a wafer,
The technique of forming solder bumps is disclosed in, for example,
A technique disclosed in Japanese Patent Publication No. 266651 is known. FIG. 6 shows a method of forming a solder bump by this technique. In this technique, an aluminum pad electrode 12 and a passivation film 13 are formed on a wafer substrate 11, and a barrier metal 14 is formed on the passivation film 13.
And a thick film liquid resist or a dry film resist 1
After applying and laminating 6 and developing, electrolytic plating is performed using the barrier metal 14 as an electrode. Thus, a solder bump electrode 15 is formed on the aluminum pad electrode 12 (FIG. 6A). Subsequently, the thick film liquid resist and the dry film resist 16 are removed, and the barrier metal 14 is removed by etching, as shown in FIG.
Is obtained. Further, through a reflow process, a bump structure on a hemisphere as shown in FIG. 6C is obtained. Thus, the formation of the solder bump electrode 15 by the solder plating can be performed. The formation of such solder bumps is performed using, for example, an apparatus shown in FIG. That is, a plating solution 23 is put in a plating tank 21, and a flat solder plate (anode) 22 and a flat wafer 11 are arranged in parallel and opposed to each other so that the directions of their surfaces become substantially the direction of gravity. Dipping in solution 23, plating solution 2
3 is agitated by a stirrer 24 provided at the bottom of the plating tank 21 to form a laminar flow, and the plating solution 23 is supplied to the electrodeposition surface.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記開
示技術では、ウエハ１１とはんだ板２２とがめっき液２
３中に略重力方向に平行に対向配置されているので、ウ
エハ１１とはんだ板２２との間に作用する電気力線２５
は、図８に示されるようにウエハ１１の端部に集中し、
その電流密度はウエハ１１の平坦部の約３倍になるの
で、約３倍の電流が集中する。この結果、電流密度に応
じて付着するはんだ量が増加し、ウエハ１１の端部にお
けるバンプ径及びバンプ高さが平坦部に比べて大きくな
ってしまうという問題がある。さらに、Ｓｎイオンに比
べてＰｂイオンの比重が大きいために上記開示技術を用
いてバンプ電極を形成すると、重力の影響を受けてＰｂ
イオンが下に沈降してしまい、ウエハ１１の重力方向の
下側が上側に比べてはんだ組成（錫比）が小さくなる傾
向にあり、バンプ電極を均一な組成比に形成することが
困難である。However, according to the above-mentioned disclosed technology, the wafer 11 and the solder plate 22 are not covered with the plating solution 2.
3, the electric lines of force 25 acting between the wafer 11 and the solder plate 22.
Concentrates on the edge of the wafer 11 as shown in FIG.
Since the current density is about three times that of the flat part of the wafer 11, about three times the current is concentrated. As a result, there is a problem that the amount of solder attached increases according to the current density, and the bump diameter and the bump height at the edge of the wafer 11 become larger than those of the flat portion. Further, since the specific gravity of Pb ions is larger than that of Sn ions, when a bump electrode is formed by using the above-described disclosed technology, Pb ions are affected by gravity and thus formed.
The ions settle down, and the solder composition (tin ratio) on the lower side in the direction of gravity of the wafer 11 tends to be smaller than that on the upper side, making it difficult to form the bump electrodes with a uniform composition ratio.
【０００４】従って、本発明は、上記課題に鑑み、ウエ
ハ全体に渡りめっき組成を均一にすることを目的とす
る。又、他の発明の目的は、ウエハの端部に集中して作
用する電気力線を緩和し、バンプ電極の径、高さを均一
に形成できるようにすることである。Accordingly, it is an object of the present invention to make the plating composition uniform over the entire wafer in view of the above problems. Another object of the present invention is to alleviate the lines of electric force acting intensively on the edge of the wafer, and to make the diameter and height of the bump electrode uniform.
【０００５】[0005]
【課題を解決するための手段】上記の課題を解決するた
めに、請求項１に記載の手段を採用することができる。
この手段によると、めっき板を略水平に配設し、めっき
板に対して重力方向の下部側にめっき板に対向させて半
導体ウエハを略水平に配設する。そして、めっき液に作
用する重力を用いてめっき液の層流を重力方向下向きに
形成して、半導体ウエハに対して層流を形成しながら半
導体ウエハにめっきを施す。このめっき法により半導体
ウエハを略水平方向に配設し、重力方向にめっき液の層
流を形成してめっきを行うことで、半導体ウエハ上に均
一な組成及び厚さの一定なめっきを形成することができ
る。又、半導体ウエハがめっき板に対して重力方向の下
部側に配設してめっきを行うことにより、めっき時に発
生する泡等の影響を受けることがなく、高品質なめっき
を形成することが可能である。Means for Solving the Problems To solve the above-mentioned problems, the means described in claim 1 can be adopted.
According to this means, the plating plate is disposed substantially horizontally, and the semiconductor wafer is disposed substantially horizontally below the plating plate in the direction of gravity to face the plating plate. Then, a laminar flow of the plating solution is formed downward in the direction of gravity using gravity acting on the plating solution, and plating is performed on the semiconductor wafer while forming a laminar flow on the semiconductor wafer. By arranging a semiconductor wafer in a substantially horizontal direction by this plating method and forming a laminar flow of a plating solution in the direction of gravity and performing plating, plating with a uniform composition and a constant thickness is formed on the semiconductor wafer. be able to. In addition, by arranging the semiconductor wafer on the lower side in the direction of gravity with respect to the plating plate and performing plating, it is possible to form high quality plating without being affected by bubbles generated at the time of plating. It is.
【０００６】請求項２に記載の手段によれば、めっき板
と半導体ウエハとが略平行に配設されることにより、半
導体ウエハ上に形成されるめっきの組成及び厚さをより
均一にすることができる。According to the second aspect of the present invention, the plating plate and the semiconductor wafer are disposed substantially in parallel to make the composition and thickness of the plating formed on the semiconductor wafer more uniform. Can be.
【０００７】請求項３に記載の手段によれば、めっき液
が満たされた筒状のめっき槽内に半導体ウエハが略水平
に保持され、半導体ウエハに対して重力方向の上部側に
半導体ウエハと対向してめっき板が略水平に保持され
る。そして、めっき槽の重力方向下方側に、めっき液を
重力差により外部に流出させ、半導体ウエハに対してめ
っき液の層流を形成するための流出孔が設けられ、流出
孔から流出しためっき液は循環供給手段によりめっき板
に対して重力方向の上部側よりめっき槽内に帰還され
る。この装置構成により、半導体ウエハが略水平方向に
配設され、半導体ウエハに対してめっき液の層流が形成
されるので、半導体ウエハ上に形成されるめっきの組成
を均一にし、厚さを一定にすることができる。又、半導
体ウエハがめっき槽内において、めっき板に対して重力
方向の下部側に配置されるので、半導体ウエハが泡等に
よる影響を受けることがなく、高品質なめっきを得るこ
とができる。According to the third aspect of the present invention, the semiconductor wafer is held substantially horizontally in the cylindrical plating tank filled with the plating solution, and the semiconductor wafer is placed above the semiconductor wafer in the direction of gravity. The plating plate is held substantially horizontally so as to face the same. An outflow hole for forming a laminar flow of the plating solution on the semiconductor wafer is provided below the plating bath in the direction of gravity of the plating bath due to a gravity difference, and the plating solution flowing out of the outflow hole is provided. Is returned to the plating tank from the upper side in the direction of gravity with respect to the plating plate by the circulation supply means. With this apparatus configuration, the semiconductor wafer is disposed in a substantially horizontal direction, and a laminar flow of the plating solution is formed on the semiconductor wafer, so that the composition of the plating formed on the semiconductor wafer is uniform and the thickness is constant. Can be In addition, since the semiconductor wafer is disposed below the plating plate in the direction of gravity in the plating tank, the semiconductor wafer is not affected by bubbles or the like, and high-quality plating can be obtained.
【０００８】請求項４に記載の手段によれば、めっき液
が満たされる筒状のめっき槽の底面部に略水平に半導体
ウエハが配設され、半導体ウエハの側面部がめっき槽の
側面部に近接している。又、めっき槽において、半導体
ウエハに対して重力方向の上部側には半導体ウエハと対
向してめっき板が略水平に配置される。めっき槽の側面
部には半導体ウエハに近接した位置に流出孔が設けら
れ、この流出孔から重力差によりめっき液が外部に流出
し、流出しためっき液は循環供給手段によりめっき板に
対して重力方向の上部側よりめっき槽内に帰還される。
この装置構成により、半導体ウエハの側面部とめっき槽
の側面部とが近接して配置されるので、めっき槽及びそ
の外側の空気の誘電率は水に比べて非常に小さく、半導
体ウエハとめっき板との間に作用する電気力線はめっき
槽の外部に漏れることがなく、見かけ上はめっき槽内の
みに電気力線が作用する。よって、半導体ウエハの端部
に作用する電気力線が低減し、半導体ウエハの端部にお
ける電流密度をその中央部における電流密度と同程度に
することができ、形成されるめっきの高さ及び径を均一
に形成することが可能となる。又、半導体ウエハがめっ
き槽の底面部に配置されるので、半導体ウエハはめっき
槽内のめっき液面に発生する泡等の影響を受けることが
なく、良好な品質のめっきが得られる。According to the fourth aspect of the present invention, the semiconductor wafer is disposed substantially horizontally on the bottom of the cylindrical plating tank filled with the plating solution, and the side of the semiconductor wafer is disposed on the side of the plating tank. Close. In the plating tank, a plating plate is disposed substantially horizontally above the semiconductor wafer in the direction of gravity to face the semiconductor wafer. An outflow hole is provided on the side surface of the plating tank at a position close to the semiconductor wafer, and the plating solution flows out of the outflow hole due to a gravity difference, and the outflowing plating solution is gravity-fed with respect to the plating plate by the circulation supply means. It is returned to the plating tank from the upper side in the direction.
With this apparatus configuration, the side surface of the semiconductor wafer and the side surface of the plating tank are disposed close to each other, so that the dielectric constant of the plating tank and the air outside the plating tank is extremely smaller than that of water. The lines of electric force that act between them do not leak to the outside of the plating tank, and apparently the lines of electric force act only in the plating tank. Accordingly, the lines of electric force acting on the edge of the semiconductor wafer are reduced, and the current density at the edge of the semiconductor wafer can be made approximately equal to the current density at the center thereof, and the height and diameter of the plating formed are Can be formed uniformly. In addition, since the semiconductor wafer is disposed on the bottom surface of the plating tank, the semiconductor wafer is not affected by bubbles or the like generated on the plating solution level in the plating tank, and good quality plating can be obtained.
【０００９】請求項５に記載の手段によれば、めっき板
と半導体ウエハとが略平行に配設されることにより、め
っきの高さ、径及び組成をより均一に形成できる。According to the means described in claim 5, the height, diameter and composition of the plating can be formed more uniformly by disposing the plating plate and the semiconductor wafer substantially in parallel.
【００１０】請求項６に記載の手段によれば、半導体ウ
エハ及びめっき板が略円板状を成し、めっき槽が略円筒
状を成すことにより、半導体ウエハの端部に集中して作
用する電気力線をより緩和することができる。According to the sixth aspect of the present invention, the semiconductor wafer and the plating plate have a substantially disk shape, and the plating tank has a substantially cylindrical shape. The lines of electric force can be further reduced.
【００１１】請求項７に記載の手段によれば、流出孔が
半導体ウエハの上面の重力方向における高さと略等しい
高さに設けられることにより、半導体ウエハ上にめっき
液の層流を良好に形成することができる。According to the means of the present invention, the outflow holes are provided at a height substantially equal to the height of the upper surface of the semiconductor wafer in the direction of gravity, so that a laminar flow of the plating solution is favorably formed on the semiconductor wafer. can do.
【００１２】請求項８に記載の手段によれば、スリット
状の流出孔が周方向に設けられることにより、めっき槽
内のめっき液を良好に流出させることができる。According to the means of the present invention, since the slit-shaped outflow holes are provided in the circumferential direction, the plating solution in the plating tank can be discharged well.
【００１３】請求項９に記載の手段によれば、めっき板
はメッシュ状に形成されることにより、めっき液がめっ
き板内を通過することができるので、めっき槽内におけ
るめっき液の流れが良くなり、より良好な層流を得るこ
とできる。According to the ninth aspect of the present invention, since the plating plate is formed in a mesh shape, the plating solution can pass through the plating plate, so that the flow of the plating solution in the plating tank is good. And a better laminar flow can be obtained.
【００１４】請求項１０に記載の手段によれば、めっき
液の液位を調整することにより、流出孔近傍におけるめ
っき液の流速を所定速度に設定することができ、より良
好な品質のめっきを得ることができる。According to the means of the present invention, the flow rate of the plating solution in the vicinity of the outflow hole can be set to a predetermined speed by adjusting the level of the plating solution. Obtainable.
【００１５】請求項１１に記載の手段によれば、めっき
槽に供給されためっき液の一部が、めっき板に対して重
力方向の上部側より外部に流出することにより、めっき
液の外部への流出位置を所定の高さに設定しておけば、
常に、めっき液の液位を一定に保持することができ、め
っき液の流速を所定速度に容易に設定することが可能と
なる。According to the eleventh aspect, a part of the plating solution supplied to the plating tank flows out from the upper side in the direction of gravity with respect to the plating plate to the outside of the plating solution. If the outflow position of is set to a predetermined height,
The level of the plating solution can always be kept constant, and the flow rate of the plating solution can be easily set to a predetermined speed.
【００１６】請求項１２に記載の手段によれば、流出孔
の断面積を調整することにより、流出孔近傍におけるめ
っき液の流速を所定速度に設定することができ、請求項
９に記載の手段と同等の効果を得ることができる。According to the twelfth aspect, by adjusting the cross-sectional area of the outflow hole, the flow rate of the plating solution in the vicinity of the outflow hole can be set to a predetermined speed. The same effect can be obtained.
【００１７】[0017]
【発明の実施の形態】以下、本発明を具体的な実施例に
基づいて説明する。図１は、本発明の具体的な実施例に
係わる電極形成装置１００の構成を示した模式図であ
る。めっき槽１は、樹脂材（プラスチック）から成り、
円筒形状を成し、底面部１ａに対向して重力方向の上側
に開口面部１ｃを有している。又、めっき槽１の側面部
１ｂには、めっき液３を流出させるためにスリット状の
流出孔４が周方向に複数個設けられている。底面部１ａ
上にはカソードとしてのウエハ（基板）６が配置され、
電源１０の陰極側と接続されている。流出孔４は、ウエ
ハ６の上面部６１の重力方向における高さと略等しい高
さに設けられている。ウエハ６は、略円板状を成し、そ
の上面部６１には図２に示されるように所定のバンプ形
成パターン６ａが形成されている。又、ウエハ６の側面
部は、めっき槽１の内側面に近接して配置されている。
アノードとしての４０％Ｓｎ−６０％Ｐｂから成るめっ
き板２は、ウエハ６と略同等の形状を成し、ウエハ６に
略平行に対向して配設され、電源１０の陽極側と接続さ
れている。このめっき板２は、メッシュ状を成し、複数
個の孔部２１が形成されており、ウエハ６に対向して開
口面部１ｃ側に配置され、その側面部がめっき槽１の内
側面に近接している。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on specific embodiments. FIG. 1 is a schematic diagram showing a configuration of an electrode forming apparatus 100 according to a specific embodiment of the present invention. The plating tank 1 is made of a resin material (plastic),
It has a cylindrical shape, and has an opening 1c above the bottom 1a in the direction of gravity. A plurality of slit-shaped outflow holes 4 are provided in the side surface portion 1b of the plating tank 1 in the circumferential direction to allow the plating solution 3 to flow out. Bottom part 1a
A wafer (substrate) 6 as a cathode is arranged on the upper side,
The power supply 10 is connected to the cathode side. The outflow hole 4 is provided at a height substantially equal to the height of the upper surface 61 of the wafer 6 in the direction of gravity. The wafer 6 has a substantially disk shape, and a predetermined bump formation pattern 6a is formed on an upper surface portion 61 thereof as shown in FIG. The side surface of the wafer 6 is arranged close to the inner surface of the plating tank 1.
The plating plate 2 made of 40% Sn-60% Pb as an anode has a substantially similar shape to the wafer 6, is disposed substantially parallel to the wafer 6 so as to face the same, and is connected to the anode side of the power supply 10. I have. The plating plate 2 is formed in a mesh shape and has a plurality of holes 21 formed therein. The plating plate 2 is disposed on the side of the opening surface 1 c facing the wafer 6, and its side surface is close to the inner surface of the plating tank 1. doing.
【００１８】めっき槽１の重力方向下方には貯水槽７が
配置されており、流出孔４及び開口面部１ｃから重力に
より自然流出しためっき液３が蓄えられる。この貯水槽
７には、管８、ポンプ５及び管９が接続されており、管
９の吐出口はめっき槽１の開口面部１ｃに配置されてい
る。これにより、ポンプ５により汲み上げられた貯水槽
７内のめっき液３は、管９を介して開口面部１ｃよりめ
っき槽１内に供給される構成となっている。貯水槽７、
ポンプ５及び管８、９が請求項でいうところの循環供給
手段に相当する。ポンプ５は、貯水槽７内のめっき液３
をめっき槽１内に供給できるだけの揚程を有していれ
ば、渦巻型、往復型のいずれの型でもよい。尚、この電
極形成装置１００では、管９により供給されためっき液
３の一部が、めっき槽１の開口面部１ｃから外側面をつ
たってオーバーフローする構成としている。又、めっき
液３は、遊離酸浴（アルカノールスルホン酸）又は硼弗
酸浴から構成されている。A water storage tank 7 is disposed below the plating tank 1 in the direction of gravity, and stores the plating solution 3 which has naturally flown out by gravity from the outflow hole 4 and the opening 1c. A pipe 8, a pump 5, and a pipe 9 are connected to the water storage tank 7, and a discharge port of the pipe 9 is arranged on an opening 1 c of the plating tank 1. Thereby, the plating solution 3 in the water storage tank 7 pumped up by the pump 5 is supplied into the plating tank 1 from the opening 1 c via the pipe 9. Water tank 7,
The pump 5 and the pipes 8 and 9 correspond to the circulating supply means in the claims. The pump 5 is provided with a plating solution 3 in a water tank 7.
Any of a spiral type and a reciprocating type may be used as long as it has a head enough to supply the plating tank 1 into the plating tank 1. In the electrode forming apparatus 100, a part of the plating solution 3 supplied by the pipe 9 is configured to overflow from the opening 1c of the plating tank 1 to the outside. The plating solution 3 is composed of a free acid bath (alkanolsulfonic acid) or a borofluoric acid bath.
【００１９】この電極形成装置１００では、管９よりめ
っき液３がめっき槽１内に供給されると、めっき液３は
めっき板２の孔部を通って重力方向下方に流れ込み、め
っき液３の一部は開口面部１ｃより側面部１ｂの外側面
をつたってオーバーフローする。めっき槽１内のめっき
液３は、ウエハ６の上面部６１の重力方向における高さ
と略等しい高さに設けられた流出孔４から外部に流出す
る。流出孔４から流出しためっき液３と開口面部１ｃか
らオーバーフローしためっき液３は、貯水槽７内に蓄え
られる。そして、ポンプ５により吸引され、管８、９を
通って再びめっき槽１内に供給される。このようにめっ
き液３をめっき槽１内に循環供給しながら電解めっきを
行うことにより、ウエハ６の上面部６１にはんだバンプ
電極が所定のパターンで形成される。In the electrode forming apparatus 100, when the plating solution 3 is supplied from the pipe 9 into the plating tank 1, the plating solution 3 flows downward through the holes of the plating plate 2 in the direction of gravity, and the plating solution 3 A part of the overflow overflows from the opening 1c to the outside of the side 1b. The plating solution 3 in the plating tank 1 flows out through an outflow hole 4 provided at a height substantially equal to the height of the upper surface portion 61 of the wafer 6 in the direction of gravity. The plating solution 3 flowing out from the outflow hole 4 and the plating solution 3 overflowing from the opening surface 1c are stored in the water storage tank 7. Then, it is sucked by the pump 5 and supplied again into the plating tank 1 through the pipes 8 and 9. By performing the electrolytic plating while circulating the plating solution 3 into the plating tank 1 in this manner, the solder bump electrodes are formed in a predetermined pattern on the upper surface portion 61 of the wafer 6.
【００２０】電極形成装置１００では、円筒状のめっき
槽１の底面部１ａに略円板形状のウエハ６を、その側面
部がめっき槽１の内側面に近接するように配置し、この
ウエハ６に対向してめっき板２を開口面部１ｃ側に配置
することにより、めっき槽１及びその外側の空気の誘電
率εv 、εa がめっき液３の誘電率εl に比較して非常
に小さく、εa ＜εv ≪εl の関係があることから、ウ
エハ６とめっき板２との間に作用する電気力線のめっき
槽１の外部への漏れが小さくなる。このときのウエハ６
とめっき板２との間に作用する電気力線の作用状態を図
３に示すが、電気力線はめっき槽１内のみに作用するの
で、ウエハ６の端部に電気力線が集中して作用すること
がなく、電解めっきによりウエハ６上に形成されるバン
プの高さ及び径をほぼ均一にすることができる。又、ウ
エハ６がめっき槽１の底面部１ａに平行に対向配置して
いるため、各部分での重力方向における高さが等しく、
重力によるイオン分布密度が等しくなるため、従来の構
成のようにウエハの重力方向の下側と上側とではんだ組
成が異なることがなく、はんだ組成をほぼ均一に形成す
ることが可能である。又、ウエハ６がめっき槽１の底面
部１ａに配置されるので、電解めっき時にめっき液３の
表面に発生する泡によるバンプ電極の形状不良を防止す
ることができる。この泡は、ポンプ５によるもの、202-
→O2＋4e- の化学反応によりめっき時にアノード側から
発生する酸素によるもの、2H+ ＋2e- →H2の化学反応に
よりカソード側から発生する水素によるものなどが考え
られるが、ウエハ６を底面部１ａに平行配置すること
で、これら泡による影響を排除することができる。In the electrode forming apparatus 100, a substantially disk-shaped wafer 6 is disposed on the bottom surface 1a of the cylindrical plating tank 1 such that the side surface thereof is close to the inner surface of the plating tank 1. By disposing the plating plate 2 on the side of the opening surface portion 1c so as to face the plating solution, the dielectric constants εv and εa of the plating tank 1 and the air outside the plating tank 1 are very small as compared with the dielectric constant εl of the plating solution 3, and Since there is a relationship of εv≪εl, leakage of electric lines of force acting between the wafer 6 and the plating plate 2 to the outside of the plating tank 1 is reduced. Wafer 6 at this time
FIG. 3 shows the state of action of the lines of electric force acting between the metal plate and the plating plate 2. Since the lines of electric force act only in the plating tank 1, the lines of electric force concentrate on the end of the wafer 6. Without any action, the height and diameter of the bumps formed on the wafer 6 by the electrolytic plating can be made substantially uniform. In addition, since the wafer 6 is disposed so as to be opposed to the bottom surface 1a of the plating tank 1 in parallel, the heights of the respective parts in the direction of gravity are equal,
Since the ion distribution densities due to gravity become equal, the solder composition does not differ between the lower side and the upper side in the direction of gravity of the wafer unlike the conventional configuration, and the solder composition can be formed almost uniformly. Further, since the wafer 6 is disposed on the bottom surface 1a of the plating tank 1, it is possible to prevent the bump electrode from being defective due to bubbles generated on the surface of the plating solution 3 during electrolytic plating. This foam was produced by pump 5, 20 2-
The oxygen 6 generated from the anode side during the plating due to the chemical reaction of O 2 + 4e − and the hydrogen generated from the cathode side due to the chemical reaction of 2H + + 2e − → H 2 can be considered. By arranging in parallel to 1a, the influence of these bubbles can be eliminated.
【００２１】又、流出孔４がウエハ６の上面部６１の重
力方向における高さと略等しい高さに設けられているの
で、重力による自然放出を用いているのでウエハ６上に
めっき液３の層流を一様に形成することができ、バンプ
電極の組成比の均一化及び厚さの均一化を図ることがで
きる。又、流出孔４近傍のめっき液３の流速は、めっき
槽１内のめっき液３の液位を変化させることにより任意
の速度に設定することができる。即ち、大気圧をPa、め
っき液３の密度をρ、重力加速度をｇ、流出孔４近傍に
おけるめっき液３の流速をｖ、貯水槽７内のめっき液３
の液位を基準としためっき槽１内におけるめっき液３の
液位の高さをＨとし、流出孔４の断面積ｓが開口面部１
ｃの面積Ｓに比較して微小であると仮定すると、ベルヌ
ーイの定理より式（１）が成立する。Since the outflow hole 4 is provided at a height substantially equal to the height of the upper surface portion 61 of the wafer 6 in the direction of gravity, spontaneous release by gravity is used, so that the layer of the plating solution 3 is formed on the wafer 6. The flow can be formed uniformly, and the composition ratio and the thickness of the bump electrode can be made uniform. The flow rate of the plating solution 3 in the vicinity of the outflow hole 4 can be set to an arbitrary speed by changing the level of the plating solution 3 in the plating tank 1. That is, the atmospheric pressure is Pa, the density of the plating solution 3 is ρ, the gravitational acceleration is g, the flow velocity of the plating solution 3 in the vicinity of the outflow hole 4 is v, and the plating solution 3 in the water tank 7 is
The height of the liquid level of the plating solution 3 in the plating tank 1 based on the liquid level of H is defined as H.
Assuming that the area is small compared to the area S of c, Equation (1) holds according to Bernoulli's theorem.
【００２２】[0022]
【数１】 Pa/ρ＋ｇＨ＝ Pa/ρ＋ (1/2)ｖ2 ──（１）Pa / ρ + gH = Pa / ρ + (1/2) v 2 ── (1)
【００２３】式（１）を流速ｖについて解くと式（２）
が得られる。When equation (1) is solved for flow velocity v, equation (2) is obtained.
Is obtained.
【数２】 ｖ ＝ （ 2ｇＨ）1/2 ──（２）## EQU2 ## v = (2gH) 1 / 2── (2)
【００２４】式（２）より、めっき槽１内のめっき液３
の液位を変化させることで、流出孔４近傍におけるめっ
き液３の流速を所望の値に設定することができる。又、
本実施例では、めっき液３の一部が開口面部１ｃよりオ
ーバーフローする構成としているので、常に、めっき液
３の液位を一定に保持することができ、めっき槽１の高
さを予め適切な値に設定しておけば、容易にめっき槽１
内のめっき液３の液位を一定に保持することが可能であ
る。このように、めっき液３の一部を開口面部１ｃより
オーバーフローさせ、めっき液３の液位を一定に保持す
ることで、流出孔４近傍のめっき液３の流速を所望の速
度に保持することができる。これにより、ウエハ６上の
めっき液３の層流速度を所望の値にすることでき、時間
的に安定した層流を形成することができ、バンプ電極の
品質向上に寄与することができる。From equation (2), the plating solution 3 in the plating tank 1
, The flow rate of the plating solution 3 in the vicinity of the outflow hole 4 can be set to a desired value. or,
In this embodiment, since a part of the plating solution 3 is configured to overflow from the opening surface portion 1c, the level of the plating solution 3 can be kept constant at all times, and the height of the plating tank 1 is set to an appropriate value in advance. If set to a value, plating tank 1
It is possible to keep the level of the plating solution 3 in the inside constant. As described above, by allowing a part of the plating solution 3 to overflow from the opening surface 1c and keeping the level of the plating solution 3 constant, the flow rate of the plating solution 3 near the outflow hole 4 is maintained at a desired speed. Can be. Thereby, the laminar velocity of the plating solution 3 on the wafer 6 can be set to a desired value, a temporally stable laminar flow can be formed, and the quality of the bump electrode can be improved.
【００２５】上記の図１に示す電極形成装置１００で
は、ウエハ６をその側面部をめっき槽１の側面部１ｂに
近接して底面部１ａ上に配置し、側面部１ｂに流出孔４
を設けた構成としたが、本発明はこれに限定されるもの
ではない。例えば、図４に上記実施例の変形例を示す
が、めっき槽１の底面部１ａの重力方向上方に金属から
成り、円板状のサセプタ４０を略水平に配設し、このサ
セプタ４０上にウエハ６を配置する構成としてもよい。
サセプタ４０はめっき槽１の内径より小さい径を有し、
上面に凹部４１が形成され、この凹部４１上にウエハ６
が配置される。これによりウエハ６の周囲にサセプタ４
０の凸部４２が配置される。サセプタ４０とめっき槽１
の側面部１ｂとの間には、めっき液３が通過できる通路
４３が設けられており、めっき槽１内のめっき液３は底
面部１ａに設けられた流出孔４から外部に流出される。
このようにして電極形成装置１０１が形成されている。In the electrode forming apparatus 100 shown in FIG. 1, the side surface of the wafer 6 is arranged on the bottom surface 1a close to the side surface 1b of the plating tank 1, and the outflow hole 4 is formed in the side surface 1b.
Is provided, but the present invention is not limited to this. For example, FIG. 4 shows a modification of the above embodiment. A disc-shaped susceptor 40 made of metal and disposed substantially horizontally above the bottom surface 1a of the plating tank 1 is provided on the susceptor 40. A configuration in which the wafer 6 is arranged may be adopted.
The susceptor 40 has a diameter smaller than the inner diameter of the plating tank 1,
A concave portion 41 is formed on the upper surface, and the wafer 6
Is arranged. Thereby, the susceptor 4 is placed around the wafer 6.
0 convex portions 42 are arranged. Susceptor 40 and plating tank 1
A passage 43 through which the plating solution 3 can pass is provided between the plating solution 3 and the side surface portion 1b, and the plating solution 3 in the plating tank 1 flows out through an outflow hole 4 provided in the bottom surface portion 1a.
Thus, the electrode forming apparatus 101 is formed.
【００２６】図４に示す構成とすることで、めっき板２
とサセプタ４０の周囲の凸部４２との間にも電気力線が
作用するので、めっき板２とウエハ６の端部との間に作
用する電気力線を緩和することができ、ウエハ６の端部
における電気力線密度を中央部における密度と略等しく
均一にできる。この結果、バンプ電極の高さ及び径を均
一に形成することができる。又、めっき槽１内のめっき
液３はサセプサ４０と側面部１ｂとの間の通路４３を通
って底面部１ａに設けられた流出孔４から流出するの
で、めっき液３の重力による均一で一様な層流を形成す
ることが可能である。このように図４に示す電極形成装
置１０１により図１に示す装置１００と同等の効果を得
ることができる。又、図４では、サセプタ４０とめっき
槽１の側面部１ｂとの間に通路４３を設けた構成とした
が、サセプタ４０とめっき槽１との間に通路を設けず、
サセプタ４０の凸部４２に貫通孔を設け、それを通路と
して用いてもよい。By adopting the structure shown in FIG.
Since the lines of electric force also act between the metal plate and the convex portion 42 around the susceptor 40, the lines of electric force acting between the plating plate 2 and the end of the wafer 6 can be reduced, and The line density of electric force at the end can be made substantially equal to the density at the center and uniform. As a result, the height and diameter of the bump electrode can be formed uniformly. Further, the plating solution 3 in the plating tank 1 flows out of the outflow hole 4 provided in the bottom portion 1a through the passage 43 between the susceptor 40 and the side surface portion 1b. It is possible to form such a laminar flow. As described above, the same effect as the device 100 shown in FIG. 1 can be obtained by the electrode forming device 101 shown in FIG. Further, in FIG. 4, the passage 43 is provided between the susceptor 40 and the side surface 1 b of the plating tank 1, but the passage is not provided between the susceptor 40 and the plating tank 1.
A through hole may be provided in the projection 42 of the susceptor 40 and used as a passage.
【００２７】上記実施例では、スリット状の流出孔４を
周方向に複数個設けた構成としたが、開口幅の大きい流
出孔４を対向して設けた構成としてもよい。この場合の
めっき槽１の模式的断面図を図５（ａ）に示す。又、図
５（ｂ）にその模式的断面図を示すように比較的開口幅
の大きい４つの流出孔４を略等間隔で設けた構成として
もよい。In the above embodiment, a plurality of slit-shaped outflow holes 4 are provided in the circumferential direction. However, an outflow hole 4 having a large opening width may be provided to face the outflow holes 4. FIG. 5A is a schematic sectional view of the plating tank 1 in this case. Further, as shown in a schematic sectional view of FIG. 5B, a configuration in which four outflow holes 4 having a relatively large opening width are provided at substantially equal intervals may be adopted.
【００２８】上記実施例では、主としてめっき槽１内の
めっき液３の液位を調整することにより、流出孔４近傍
のめっき液３の流速を所望の値に設定する構成とした
が、所定断面積のオリフィスなどを流出孔４に装着して
流出孔４の断面積を調整することで、めっき液３の流速
を所望の値に設定する構成としてもよい。又、上記実施
例では、電極形成装置１００を用いてはんだバンプ電極
を形成する場合について説明したが、アルミニウム(Al)
や銅(Cu)など他の金属材料を用いた電解めっき法による
バンプ電極形成に適用することができ、これにより他の
組成から成るバンプ電極の高さ及び径を均一に形成する
ことが可能となる。尚、上記実施例では、めっき板２及
び半導体ウエハ６を重力方向に対して直角となるように
配置したが、これに限られるものではない。ウエハ６の
表面に発生する泡がウエハ６の表面に滞留しない程度で
あれば、重力方向に対して斜めに配置してもよい。又、
このような場合には、適宜ウエハ６を回転させることに
よりウエハ６の表面全体に略均一にめっき液が触れるよ
うにすることが望ましい。In the above embodiment, the flow rate of the plating solution 3 near the outflow hole 4 is set to a desired value mainly by adjusting the level of the plating solution 3 in the plating tank 1. The flow rate of the plating solution 3 may be set to a desired value by attaching an orifice having an area to the outflow hole 4 and adjusting the cross-sectional area of the outflow hole 4. In the above embodiment, the case where the solder bump electrode is formed using the electrode forming apparatus 100 has been described.
Can be applied to the formation of bump electrodes by electroplating using other metal materials such as copper and copper (Cu), which makes it possible to uniformly form the height and diameter of bump electrodes of other compositions Become. In the above embodiment, the plating plate 2 and the semiconductor wafer 6 are arranged so as to be perpendicular to the direction of gravity. However, the present invention is not limited to this. As long as bubbles generated on the surface of the wafer 6 do not stay on the surface of the wafer 6, they may be arranged obliquely to the direction of gravity. or,
In such a case, it is desirable to rotate the wafer 6 as appropriate so that the plating solution contacts the entire surface of the wafer 6 substantially uniformly.
【００２９】上記に示されるように、本発明によれば、
重力を用いてめっき液の層流を形成し、円筒状のめっき
槽の底面部にウエハを水平配置し、そのウエハに対向し
てめっき板を重力方向の上方に水平配置することによ
り、めっき組成を均一にし、厚さを一様に形成すること
ができる。又、別の発明によれば、ウエハの側面部をめ
っき槽の側面部に近接させることで、ウエハの端部に集
中して作用する電気力線を緩和させ、ウエハ端部でのめ
っき厚さを中央部と略等しく均一に形成することができ
る。As indicated above, according to the present invention,
The laminar flow of the plating solution is formed using gravity, the wafer is horizontally arranged on the bottom of the cylindrical plating tank, and the plating plate is horizontally arranged above the direction of gravity so as to face the wafer, so that the plating composition is And the thickness can be made uniform. According to another aspect of the present invention, by bringing the side surface of the wafer close to the side surface of the plating tank, the lines of electric force acting intensively on the edge of the wafer are reduced, and the plating thickness at the edge of the wafer is reduced. Can be formed substantially equally and uniformly with the central portion.
【図１】本発明の具体的な実施例に係わる電極形成装置
の構成を示した模式図。FIG. 1 is a schematic diagram showing a configuration of an electrode forming apparatus according to a specific embodiment of the present invention.
【図２】本発明の具体的な実施例に係わる電極形成装置
において、基板上に形成されるバンプの形成パターンを
示した模式図。FIG. 2 is a schematic view showing a pattern for forming a bump formed on a substrate in an electrode forming apparatus according to a specific embodiment of the present invention.
【図３】本発明の具体的な実施例に係わる電極形成装置
において、めっき板とウエハとの間に作用する電気力線
を示した模式図。FIG. 3 is a schematic diagram showing lines of electric force acting between a plating plate and a wafer in the electrode forming apparatus according to a specific embodiment of the present invention.
【図４】本発明の具体的な他の実施例に係わる電極形成
装置の構成を示した模式図。FIG. 4 is a schematic diagram showing a configuration of an electrode forming apparatus according to another specific embodiment of the present invention.
【図５】本発明の具体的な実施例に係わる電極形成装置
において、めっき槽に形成された流出孔の変形例を示し
た模式的断面図。FIG. 5 is a schematic cross-sectional view showing a modification of an outflow hole formed in a plating tank in an electrode forming apparatus according to a specific embodiment of the present invention.
【図６】従来のバンプ電極の形成方法を示した模式図。FIG. 6 is a schematic view showing a conventional method for forming a bump electrode.
【図７】従来の電極形成装置の構成を示した模式図。FIG. 7 is a schematic diagram showing a configuration of a conventional electrode forming apparatus.
【図８】はんだ板とウエハとが平行配置されたときに作
用する電気力線を示した模式図。FIG. 8 is a schematic diagram showing electric lines of force acting when a solder plate and a wafer are arranged in parallel.
１ めっき槽 ２ めっき板 ３ めっき液 ４ 流出孔 ５ ポンプ ６ ウエハ ７ 貯水槽 ８、９ 管 １０ 電源 ４０ サセプタ １００、１０１ 電極形成装置 DESCRIPTION OF SYMBOLS 1 Plating tank 2 Plating plate 3 Plating solution 4 Outflow hole 5 Pump 6 Wafer 7 Water tank 8, 9 tube 10 Power supply 40 Susceptor 100, 101 Electrode forming device
Claims (12)
きを施す方法において、 めっき板を略水平に配設し、 前記めっき板に対して重力方向の下部側に前記めっき板
に対向させて前記半導体ウエハを略水平に配設し、 めっき液に作用する重力を用いてめっき液の層流を重力
方向下向きに形成し、前記半導体ウエハに対して層流を
形成しながら、前記半導体ウエハをめっきすることを特
徴とする半導体ウエハのめっき方法。1. A method for plating a semiconductor wafer by an electrolytic plating method, wherein a plating plate is disposed substantially horizontally, and the semiconductor wafer is opposed to the plating plate below the plating plate in the direction of gravity. Is disposed substantially horizontally, a laminar flow of the plating solution is formed downward in the direction of gravity using gravity acting on the plating solution, and the semiconductor wafer is plated while forming a laminar flow on the semiconductor wafer. A method for plating a semiconductor wafer, comprising:
平行に配設されたことを特徴とする請求項１に記載の半
導体ウエハのめっき方法。2. The method for plating a semiconductor wafer according to claim 1, wherein said plating plate and said semiconductor wafer are disposed substantially in parallel.
きを施す装置において、 めっき液が満たされ、前記半導体ウエハを略水平に保持
した筒状のめっき槽と、 前記めっき槽において、前記半導体ウエハに対して重力
方向の上部側に前記半導体ウエハと対向させ、略水平に
保持されためっき板と、 前記めっき槽の重力方向の下方側に形成され、前記めっ
き液を重力差により外部に放出し、前記半導体ウエハに
対して前記めっき液の層流を形成するための流出孔と、 前記流出孔から流出した前記めっき液を、前記めっき板
に対して重力方向の上部側より前記めっき槽内に帰還さ
せる循環供給手段とから成ることを特徴とする半導体ウ
エハのめっき装置。3. An apparatus for plating a semiconductor wafer by an electrolytic plating method, comprising: a tubular plating tank filled with a plating solution and holding the semiconductor wafer substantially horizontally; A plating plate that is opposed to the semiconductor wafer on the upper side in the direction of gravity and is held substantially horizontally, and is formed below the plating tank in the direction of gravity, and discharges the plating solution to the outside due to a gravity difference. An outflow hole for forming a laminar flow of the plating solution on the semiconductor wafer; and the plating solution flowing out of the outflow hole is returned into the plating tank from the upper side in the direction of gravity with respect to the plating plate. A plating apparatus for a semiconductor wafer, comprising: a circulating supply unit.
きを施す装置において、 めっき液が満たされ、前記半導体ウエハを略水平に配設
する底面部と、前記半導体ウエハの側面部に近接した側
面部とから成る筒状のめっき槽と、 前記めっき槽において、前記半導体ウエハに対して重力
方向の上部側において、前記半導体ウエハと対向して略
水平に配置されためっき板と、 前記めっき槽の前記側面部において、前記半導体ウエハ
に近接した位置に形成され、前めっき液を重力差により
外部に流出させる流出孔と、 前記流出孔から流出した前記めっき液を、前記めっき板
に対して重力方向の上部側より前記めっき槽内に帰還さ
せる循環供給手段とから成ることを特徴とする半導体ウ
エハのめっき装置。4. An apparatus for plating a semiconductor wafer by an electrolytic plating method, comprising: a bottom portion on which a plating solution is filled and the semiconductor wafer is disposed substantially horizontally; and a side portion close to a side portion of the semiconductor wafer. A cylindrical plating tank comprising: a plating plate comprising: a plating plate disposed substantially horizontally on the upper side of the semiconductor tank in the direction of gravity with respect to the semiconductor wafer; An outflow hole formed at a position close to the semiconductor wafer and allowing the pre-plating solution to flow out due to a gravity difference; and the plating solution flowing out of the outflow hole being positioned above the plating plate in the direction of gravity. And a circulating supply means for returning the wafer from the side to the inside of the plating tank.
平行に配設されたことを特徴とする請求項３又は４に記
載の半導体ウエハのめっき装置。5. The apparatus for plating a semiconductor wafer according to claim 3, wherein said plating plate and said semiconductor wafer are disposed substantially in parallel.
円板状を成し、前記めっき槽が略円筒状を成すことを特
徴とする請求項３又は４に記載の半導体ウエハのめっき
装置。6. The plating apparatus for a semiconductor wafer according to claim 3, wherein the semiconductor wafer and the plating plate have a substantially disk shape, and the plating tank has a substantially cylindrical shape.
の重力方向における高さと略等しい高さに設けられたこ
とを特徴とする請求項３又は４に記載の半導体ウエハの
めっき装置。7. The semiconductor wafer plating apparatus according to claim 3, wherein the outflow hole is provided at a height substantially equal to a height of the upper surface of the semiconductor wafer in the direction of gravity.
めっき槽の周方向に設けられたことを特徴とする請求項
３又は４に記載の半導体ウエハのめっき装置。8. The plating apparatus for a semiconductor wafer according to claim 3, wherein the outflow hole has a slit shape and is provided in a circumferential direction of the plating tank.
能にメッシュ状に形成されたことを特徴とする請求項３
又は４に記載の半導体ウエハのめっき装置。9. The plating plate according to claim 3, wherein the plating plate is formed in a mesh shape so that the plating solution can pass therethrough.
Or a semiconductor wafer plating apparatus according to 4.
より、前記流出孔近傍における前記めっき液の流速が所
定速度に設定されたことを特徴とする請求項３又は４に
記載の半導体ウエハのめっき装置。10. The semiconductor wafer according to claim 3, wherein a flow rate of the plating solution in the vicinity of the outflow hole is set to a predetermined speed by adjusting a level of the plating solution. Plating equipment.
液の一部は、前記めっき槽において、前記めっき板に対
して重力方向の上部側より外部に流出することで前記め
っき液の流速が所定速度に設定されたことを特徴とする
請求項１０に記載の半導体ウエハのめっき装置。11. A part of the plating solution supplied to the plating tank flows out of the plating tank from the upper side in the direction of gravity with respect to the plating plate, so that the flow rate of the plating solution is predetermined. The plating apparatus for a semiconductor wafer according to claim 10, wherein the apparatus is set at a speed.
より、前記流出孔近傍における前記めっき液の流速が所
定速度に設定されたことを特徴とする請求項３又は４に
記載の半導体ウエハのめっき装置。12. The semiconductor wafer according to claim 3, wherein a flow rate of the plating solution near the outflow hole is set to a predetermined speed by adjusting a cross-sectional area of the outflow hole. Plating equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34659796A JP3677911B2 (en) | 1996-12-09 | 1996-12-09 | Method and apparatus for plating semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34659796A JP3677911B2 (en) | 1996-12-09 | 1996-12-09 | Method and apparatus for plating semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10172974A true JPH10172974A (en) | 1998-06-26 |
| JP3677911B2 JP3677911B2 (en) | 2005-08-03 |
Family
ID=18384513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34659796A Expired - Fee Related JP3677911B2 (en) | 1996-12-09 | 1996-12-09 | Method and apparatus for plating semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3677911B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001050505A3 (en) * | 2000-01-03 | 2002-01-31 | Semitool Inc | A microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| US7313462B2 (en) | 2003-06-06 | 2007-12-25 | Semitool, Inc. | Integrated tool with automated calibration system and interchangeable wet processing components for processing microfeature workpieces |
| US7390382B2 (en) | 2003-07-01 | 2008-06-24 | Semitool, Inc. | Reactors having multiple electrodes and/or enclosed reciprocating paddles, and associated methods |
| US7393439B2 (en) | 2003-06-06 | 2008-07-01 | Semitool, Inc. | Integrated microfeature workpiece processing tools with registration systems for paddle reactors |
-
1996
- 1996-12-09 JP JP34659796A patent/JP3677911B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001050505A3 (en) * | 2000-01-03 | 2002-01-31 | Semitool Inc | A microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| US6547937B1 (en) | 2000-01-03 | 2003-04-15 | Semitool, Inc. | Microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| US6773559B2 (en) | 2000-01-03 | 2004-08-10 | Semitool, Inc. | Processing apparatus including a reactor for electrochemically etching a microelectronic workpiece |
| US7294244B2 (en) | 2000-01-03 | 2007-11-13 | Semitool, Inc. | Microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece |
| US7524406B2 (en) | 2000-01-03 | 2009-04-28 | Semitool, Inc. | Processing apparatus including a reactor for electrochemically etching microelectronic workpiece |
| US7313462B2 (en) | 2003-06-06 | 2007-12-25 | Semitool, Inc. | Integrated tool with automated calibration system and interchangeable wet processing components for processing microfeature workpieces |
| US7371306B2 (en) | 2003-06-06 | 2008-05-13 | Semitool, Inc. | Integrated tool with interchangeable wet processing components for processing microfeature workpieces |
| US7393439B2 (en) | 2003-06-06 | 2008-07-01 | Semitool, Inc. | Integrated microfeature workpiece processing tools with registration systems for paddle reactors |
| US7390382B2 (en) | 2003-07-01 | 2008-06-24 | Semitool, Inc. | Reactors having multiple electrodes and/or enclosed reciprocating paddles, and associated methods |
| US7390383B2 (en) | 2003-07-01 | 2008-06-24 | Semitool, Inc. | Paddles and enclosures for enhancing mass transfer during processing of microfeature workpieces |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3677911B2 (en) | 2005-08-03 |
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