JP2007231315A - Plating apparatus and plating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plating apparatus which has a plating tank with an opened top and can refresh a plating solution with a different stirring method from that of using a stirring rod. <P>SOLUTION: This plating apparatus has an assembly 10 for introducing the plating solution and simultaneously straightening the flow, which is arranged between an anode electrode 7 and a semiconductor wafer 9 in a vertical direction in the plating tank 1. The assembly 10 for introducing the plating solution and simultaneously straightening the flow has a structure comprising: a plating solution introduction plate 12 having a through hole 16 and a plating solution introduction hole 17; first and second flow-straightening plates 13 and 14 having a number of micropores therein installed on both faces of the introduction plate 12; and an electric field masking shield 15 having a through hole 23 installed on the external surface of the first flow-straightening plate 13. Most parts of the plating solution 22 which has been introduced into the through hole 16 of the plating solution introduction plate 12 are discharged in a transverse direction to the tank and perpendicular direction to the first flow-straightening plate 13 through the micropores of the first flow-straightening plate 13 to abut with the surface of the semiconductor wafer 9. It is also possible to make the plating tank 1 into a sealed structure and to make a plurality of the flow-straightening plates horizontally stacked. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plating apparatus and a plating method used in the technical field of semiconductors.

  For example, in a conventional plating apparatus used in the technical field of semiconductors, an anode electrode and a semiconductor wafer are vertically arranged so that an anode electrode and a semiconductor wafer face each other in a plating solution in a plating tank whose upper surface is open. In other words, the agitating rod arranged vertically is reciprocated in the horizontal direction along the semiconductor wafer to perform the plating process while agitating the plating solution (for example, see Patent Document 1). In this case, the plating solution is stirred in order to refresh the plating solution near the surface of the semiconductor wafer by making the concentration distribution and temperature distribution of the plating solution in the plating tank as uniform as possible.

JP-A-8-311699

  By the way, a semiconductor device is generally called a CSP (chip size package). A wiring made of plating is provided on a semiconductor substrate, and a columnar electrode made of plating is provided on the upper surface of a connection pad portion of the wiring. There are those whose surroundings are covered with a sealing film. In such a semiconductor device, when the height of the columnar electrode is further increased or the diameter thereof is further decreased, if the plating solution is not sufficiently stirred, the columnar electrode may have a defective shape or height. Variation will occur. Recently, in order to shorten the plating time, a plating solution corresponding to a high current density has been developed. However, with such a plating solution, it is necessary to increase the stirring efficiency of the plating solution.

  However, in the plating apparatus described in Patent Document 1, in order to increase the stirring efficiency of the plating solution, the reciprocating speed of the stirring bar may be increased. However, if the reciprocating speed of the stirring bar is increased too much, the upper surface is opened. Since the surface of the plating solution in the plating bath is violent, the plating solution is scattered outside the plating bath, and the plating deposition efficiency on the semiconductor wafer near the surface of the plating solution is reduced, so the stirring efficiency of the plating solution is limited. There is a problem.

  Accordingly, an object of the present invention is to provide a plating apparatus and a plating method capable of refreshing a plating solution by a method different from stirring by a stirring rod.

  In order to achieve the above object, the present invention provides a plating solution inflow member having a through hole in a portion corresponding to an object to be plated and a plating solution inflow hole communicating with the through hole, and the plating solution inflow member. A first rectifying plate that is provided on one surface and has a large number of micropores that allow the plating solution to pass therethrough, and is provided on the other surface of the plating solution inflow member, and allows the plating solution to pass through the first rectifying plate. And a second baffle plate having a large number of micro holes to allow at least.

  According to the present invention, most (for example, 70 to 90% of the total flow rate) of the plating solution that has flowed into the through hole of the plating solution inflow member through the plating solution inflow hole is the first rectifying plate. Therefore, the plating solution can be refreshed by a method different from the agitation because the solution flows almost uniformly in a direction perpendicular to the first current plate.

(First embodiment)
FIG. 1 shows a longitudinal sectional view of a main part of a plating apparatus as a first embodiment of the present invention, and FIG. 2 shows a transverse sectional view taken along line II-II in FIG. In this case, FIG. 1 is a longitudinal sectional view taken along line II of FIG. As shown in FIG. 3, the plating apparatus includes a horizontally long plating tank 1 and a horizontally long plating solution recovery tank 2 provided outside the plating tank 1. In this case, the upper surfaces of the plating tank 1 and the plating solution recovery tank 2 are open.

  Between the both side walls in the short side direction and one side wall in the long side direction of the plating tank 1 and the plating solution recovery tank 2, a substantially plane U-shaped space 3 is provided. The heights of the four side walls of the plating solution recovery tank 2 are the same. The height of both side walls in the short side direction of the plating tank 1 is the same as the height of the side walls of the plating solution recovery tank 2. Overflow recesses 4 for overflowing a plating solution (described later) in the plating tank 1 are provided on the upper portions of both side walls in the long side direction of the plating tank 1.

  A circular plating solution recovery hole 5 is provided at a predetermined location at the bottom of the plating solution recovery tank 2. A wafer support plate 6 and an anode electrode 7 are vertically arranged opposite to each other on the inner surfaces of both side walls in the short side direction of the plating tank 1. The wafer support plate 6 and the anode electrode 7 have a rectangular shape, and handle portions (not shown) provided on both upper sides of the wafer support plate 6 and the anode electrode 7 are supported on both side walls in the long side direction of the plating solution recovery tank 2. ing. A substantially circular concave portion 8 is provided at a substantially central portion of the surface of the wafer support plate 6 facing the anode electrode 7. A semiconductor wafer 9 is positioned and accommodated in the recess 8.

  In the plating tank 1, a plating solution inflow / rectifying structure 10 is vertically disposed between the wafer support plate 6 and the anode electrode 7. In this case, the plating solution inflow / rectifying structure 10 is guided by guides 11 (see FIG. 3) provided vertically in both side walls in the long side direction of the plating tank 1 and is disposed vertically in the plating tank 1. It has become so.

  The plating solution inflow and rectification component 10 includes a plating solution inflow plate 12, a first rectification plate 13 provided on the surface of the plating solution inflow plate 12 facing the wafer support plate 6, and an anode electrode of the plating solution inflow plate 12. 7 is provided with a second rectifying plate 14 provided on the surface facing 7, and an electric field shielding plate 15 provided on the outer surface of the first rectifying plate 13. The plating solution inflow plate 12, the first and second rectifying plates 13 and 14, and the electric field shielding plate 15 have a rectangular shape with the same size.

  A circular through hole 16 is provided in a portion corresponding to the semiconductor wafer 9 accommodated in the recess 8 of the wafer support plate 6 in the substantially central portion of the plating solution inflow plate 12. A plating solution inflow hole 17 is provided in the upper central portion of the plating solution inflow plate 12 so as to communicate with the through hole 16. One end of a plating solution inflow pipe 19 is connected to the plating solution inflow hole 17 through a pipe joint 18.

  The other end of the plating solution inflow pipe 19 is connected to the plating solution tank 21 via the pump 20. A plating solution 22 is accommodated in the plating solution tank 21. In this case, the plating solution 22 includes ionized copper. Here, the plating solution recovery hole 5 of the plating solution recovery tank 2 is connected to the inside of the plating solution tank 21 through a plating solution recovery pipe (not shown).

  The first rectifying plate 13 has a large number of minute holes (not shown) that allow the plating solution 22 to pass therethrough. The second rectifying plate 14 has a large number of minute holes (not shown) that allow the plating solution 22 to pass less than the first rectifying plate. The minute holes of the first and second rectifying plates 13 and 14 may be straight circular holes, and anisotropic holes (porous) are used to prevent the plating solution 22 from flowing. Plate). When the first and second rectifying plates 13 and 14 are formed of a porous plate, the second rectifying plate 14 is formed of a porous plate that is finer than the first rectifying plate 13.

  A circular through-hole 23 is provided in a portion corresponding to the semiconductor wafer 9 accommodated in the recess 8 of the wafer support plate 6 at a substantially central portion of the electric field shielding plate 15. The electric field shielding plate 15 shields the electric field from the anode electrode 7 larger than the semiconductor wafer 9 at a portion other than the through hole 23 to ensure in-plane uniformity of plating on the semiconductor wafer 9. In this case, the in-plane uniformity of plating on the semiconductor wafer 9 can be adjusted by changing the size and shape of the through hole 23 of the electric field shielding plate 15.

  Here, an example of a semiconductor device called CSP manufactured from the semiconductor wafer 9 will be described with reference to a cross-sectional view shown in FIG. This semiconductor device includes a silicon substrate 31. An integrated circuit (not shown) having a predetermined function is provided on the upper surface of the silicon substrate 31, and a plurality of connection pads 32 made of aluminum-based metal or the like are provided on the periphery of the upper surface so as to be connected to the integrated circuit.

  An insulating film 33 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 31 excluding the central portion of the connection pad 32, and the central portion of the connection pad 32 is exposed through an opening 34 provided in the insulating film 33. Yes. A protective film 35 made of polyimide resin or the like is provided on the upper surface of the insulating film 33. An opening 36 is provided in the protective film 35 in a portion corresponding to the opening 34 of the insulating film 33.

  A base metal layer 37 made of copper or the like is provided on the upper surface of the protective film 35. A wiring 38 made of copper is provided on the entire upper surface of the base metal layer 37. One end of the wiring 38 including the base metal layer 37 is connected to the connection pad 32 through the openings 34 and 36 of the insulating film 33 and the protective film 35.

  A columnar electrode 39 made of copper is provided on the upper surface of the connection pad portion of the wiring 38. A sealing film 40 made of an epoxy resin or the like is provided on the upper surface of the protective film 35 including the wiring 38 so that the upper surface is flush with the upper surface of the columnar electrode 39. Therefore, the upper surface of the columnar electrode 39 is exposed. A solder ball 41 is provided on the exposed upper surface of the columnar electrode 39.

  Next, the case where the columnar electrode 39 is formed on the semiconductor wafer 9 using the plating apparatus having the above-described configuration will be described. First, the semiconductor wafer 9 and the like in the state shown in FIGS. This will be described with reference to the drawings.

  A connection pad 32, an insulating film 33 and a protective film 35 are formed on the semiconductor wafer 9 made of silicon, and the connection pad 32 exposed through the openings 34 and 36 formed in the insulating film 33 and the protective film 35 is formed. A base metal layer 37 is formed on the entire upper surface of the protective film 35 including the upper surface, a wiring 38 is formed on the upper surface of the base metal layer 37, and a resist film 42 is patterned on the upper surface of the base metal layer 37 including the wiring 38. Is formed.

  In this case, an opening 43 is formed in the resist film 42 in a portion corresponding to the connection pad portion of the wiring 38 (that is, the columnar electrode 39 formation region). Further, although not shown, a predetermined portion of the peripheral portion of the base metal layer 37 is not covered with the resist film 42 and serves as a plating connection terminal connected to the cathode electrode.

  Now, when the pump 20 of the plating apparatus having the above configuration is driven, the plating solution 22 in the plating solution tank 21 passes through the plating solution inflow pipe 19, the pipe joint 18 and the plating solution inflow hole 17, and the through hole of the plating solution inflow plate 12. 16 is flowed into. The flowing plating solution 22 flows out in the lateral direction perpendicular to the first rectifying plate 13 through the minute holes of the first rectifying plate 13 and the through holes 23 of the electric field shielding plate 15, and It flows out in the lateral direction perpendicular to the second rectifying plate 14 through the minute holes of the second rectifying plate 14.

  The plating solution 22 that has flowed out in the lateral direction perpendicular to the first rectifying plate 13 through the minute holes of the first rectifying plate 13 and the through-holes 23 of the electric field shielding plate 15 is the recess 8 of the wafer support plate 6. After being in contact with the surface of the semiconductor wafer 9 accommodated therein substantially uniformly, in the space between the electric field shielding plate 15 including the through hole 23 and the wafer support plate 6 including the semiconductor wafer 9 in the plating tank 1. Charged.

  The plating solution 22 that has flowed out in the lateral direction perpendicular to the second rectifying plate 14 through the minute holes of the second rectifying plate 14 is the anode electrode in the portion corresponding to the through hole 16 of the plating solution inflow plate 12. 7, the space between the second rectifying plate 14 and the anode electrode 7 in the plating tank 1 is filled.

  Here, the first and second rectifying plates 13 and 14 adjust the hole diameter and the number of holes so that the flow rate of the plating solution 22 passing through the first rectifying plate 13 is the total flow rate (for example, 20 L / min at the maximum). About 70%, preferably about 80%. Accordingly, most of the plating solution 22 that has flowed into the through hole 16 of the plating solution inflow plate 12 flows out substantially uniformly in the lateral direction perpendicular to the first rectifying plate 13 via the first rectifying plate 13. Therefore, the plating solution 22 near the surface of the semiconductor wafer 9 accommodated in the recess 8 of the wafer support plate 6 can be refreshed by a method different from the stirring by the stirring rod.

  Since the plating solution 22 continues to flow into the through-hole 16 of the plating solution inflow plate 12 through the plating solution inflow hole 17, the excess plating solution 22 after filling the plating tank 1 becomes the overflow recess 4. And is collected in the plating solution tank 21 through the space 3, the plating solution collection hole 5, and the plating solution collection pipe.

  Then, as shown in FIG. 6, when copper electroplating is performed using the base metal layer 37 as a plating current path, a columnar electrode 39 is formed on the upper surface of the connection pad portion of the wiring 38 in the opening 43 of the resist film 42. The

  The subsequent steps will be briefly described. The resist film 42 is peeled off, and unnecessary portions of the base metal layer 37 are removed by etching using the columnar electrodes 39 and the wirings 38 as a mask, and the protection including the columnar electrodes 39 and the wirings 38 is performed. The sealing film 40 is formed on the entire upper surface of the film 35 so that the thickness thereof is greater than the height of the columnar electrode 39, and the upper surface side of the sealing film 40 and the columnar electrode 39 is appropriately polished to form the columnar electrode 39. When the upper surface is exposed, solder balls 41 are formed on the exposed upper surfaces of the columnar electrodes 39, and dicing is performed, a plurality of semiconductor devices shown in FIG. 4 are obtained. The wiring 38 is also formed using this plating apparatus, but the description thereof is omitted.

  By the way, in the plating apparatus using the stirring rod as described in the above-mentioned Patent Document 1, generally speaking, in order to increase the stirring efficiency of the plating solution, for example, referring to FIG. A stirring bar is disposed between the semiconductor wafer 9 accommodated in the electric field 8 and the electric field shielding plate 15. Therefore, the distance between the semiconductor wafer 9 and the electric field shielding plate 15 is increased to some extent, the electric field shielding effect by the electric field shielding plate 15 is reduced, and it is advantageous in terms of ensuring in-plane uniformity of plating on the semiconductor wafer 9. I can't say that. Further, since the distance between the semiconductor wafer 9 and the electric field shielding plate 15 is increased to some extent, the apparatus is increased in size.

  On the other hand, in the plating apparatus having the above configuration, since the first rectifying plate 13 is provided on the opposite side of the electric field shielding plate 15 from the side facing the wafer supporting plate 6, the wafer supporting plate 6 and the electric field shielding plate 15 are provided. And the electric field shielding effect by the electric field shielding plate 15 can be improved, and the in-plane uniformity of plating on the semiconductor wafer 9 can be further ensured. Moreover, since the space | interval of the wafer support plate 6 and the electric field shielding board 15 can be made as small as possible, an apparatus can be reduced in size.

(Second Embodiment)
FIG. 7 shows a plan view of the main part of a plating apparatus as a second embodiment of the present invention, and FIG. 8 shows a longitudinal sectional view taken along line VIII-VIII in FIG. This plating apparatus differs greatly from the plating apparatus shown in FIGS. 1 and 2 in that the plating tank 1 and the plating solution recovery tank 2 have a circular planar shape and are sealed in the plating solution recovery tank 2. This is a point where two are stacked in a horizontal position.

  That is, the plating solution recovery tank 2 has a bottomed cylindrical shape, and a circular plating solution recovery hole 5 is provided at the center of the bottom. In the plating solution recovery tank 2, two planar circular plating tanks 1 are stacked and arranged. In this case, the plating tank 1 includes a bottomed cylindrical plating tank main body 1a and a headed cylindrical plating tank cover 1b provided on the bottom thereof so as to be openable and closable. When the plating tank cover 1b is closed, the plating tank 1 is hermetically sealed. It comes to be in a state.

  A wafer support plate 6 is horizontally provided in the plating tank cover 1b. A semiconductor wafer 9 is positioned and accommodated in a recess 8 provided at the center of the lower surface of the wafer support plate 6. An anode electrode 7 is provided horizontally in the lower part of the plating tank main body 1a. A plating solution inflow / rectifying structure 10 is horizontally provided at the center in the vertical direction in the plating tank body 1a.

  The plating solution inflow / rectifying structure 10 has a structure in which a second rectifying plate 14, a plating solution inflow plate 12, a first rectifying plate 13 and an electric field shielding plate 15 are laminated in order from the bottom. A through hole 23 is provided at the center of the electric field shielding plate 15. In the plating solution inflow hole 17 provided in the plating solution inflow plate 12 so as to communicate with the through hole 23 provided in the center thereof, one end of the pipe joint 18 is provided in the through hole provided in the outer peripheral wall of the plating tank body 1a. 24 is connected. The other end of the pipe joint 18 is connected to the plating solution tank 21 via a plating solution inflow pipe 19 in which a pump 20 is interposed.

  A plurality of plating solution recovery recesses for recovering the plating solution 22 between the electric field shielding plate 15 including the through hole 23 and the wafer support plate 6 including the semiconductor wafer 9 are provided on the outer peripheral wall of the plating tank body 1a. 25 is provided. A plurality of plating solution recovery holes 26 for recovering the plating solution 22 between the second rectifying plate 14 and the anode electrode 7 are provided in the lower part of the outer peripheral wall of the plating tank body 1a.

  Next, the operation of this plating apparatus will be described. When the pump 20 is driven, the plating solution 22 in the plating solution tank 21 flows into the through hole 16 of the plating solution inflow plate 12 through the plating solution inflow pipe 19, the pipe joint 18 and the plating solution inflow hole 17. The inflowing plating solution 22 flows out upward in the direction perpendicular to the first rectifying plate 13 through the minute holes of the first rectifying plate 13 and the through holes 23 of the electric field shielding plate 15, and It flows out in the downward direction perpendicular to the second rectifying plate 14 through the minute holes of the second rectifying plate 14.

  The plating solution 22 that has flowed upward through the minute holes of the first rectifying plate 13 and the through holes 23 of the electric field shielding plate 15 in the vertical direction with respect to the first rectifying plate 13 is the recess 8 of the wafer support plate 6. After being brought into substantially uniform contact with the surface of the semiconductor wafer 9 accommodated therein, it flows out into the plating solution recovery tank 2 through the plating solution recovery recess 25.

  The plating solution 22 that has flowed out downward perpendicular to the second rectifying plate 14 through the minute holes of the second rectifying plate 14 is an anode electrode in a portion corresponding to the through hole 16 of the plating solution inflow plate 12. 7 is brought into contact with the surface of the plate 7 almost uniformly, and then flows out into the plating solution recovery tank 2 through the plating solution recovery hole 26.

  Also in this case, most of the plating solution 22 that has flowed into the through-hole 16 of the plating solution inflow plate 12 is substantially uniform in the upward direction perpendicular to the first rectifying plate 13 via the first rectifying plate 13. Therefore, the plating solution 22 near the surface of the semiconductor wafer 9 accommodated in the recess 8 of the wafer support plate 6 can be refreshed.

  By the way, this type of conventional plating apparatus is called a cup type, and an anode electrode is horizontally provided in a lower part of a cup-shaped plating tank, and a semiconductor wafer is horizontally arranged on the upper part of the plating tank. A plating solution jetted from a plating solution jet port at the center of the bottom is sprayed onto the surface of a semiconductor wafer to recover the overflowing plating solution from the plating tank.

  However, in such a conventional plating apparatus, in order to spray the plating solution jetted from the plating solution jet port at the center of the bottom of the plating tank as uniformly as possible on the surface of the semiconductor wafer, the plating solution jet port and the semiconductor wafer It is necessary to increase the distance to the device to some extent, which increases the size of the apparatus.

  Further, in such a conventional plating apparatus, only one semiconductor wafer disposed on the upper part of the plating tank can be subjected to the plating process. Therefore, the plating process is simultaneously applied to a plurality of semiconductor wafers. In this case, a plurality of such plating apparatuses are arranged in parallel in the horizontal direction, and the installation area becomes large.

  On the other hand, in the plating apparatus having the above-described configuration, most of the plating solution 22 that has flowed into the through hole 16 of the plating solution inflow plate 12 is transferred to the first rectifying plate 13 via the first rectifying plate 13. Since the liquid flows almost uniformly upward in the vertical direction, the distance between the plating solution inflow / rectifying structure 10 and the wafer support plate 6 can be made as small as possible, and the apparatus can be made thinner. .

  Further, in the plating apparatus having the above configuration, when two (or three or more) semiconductor wafers 9 are subjected to plating simultaneously, two (or three or more) sealed plating tanks 1 are stacked. Therefore, the installation area can be reduced.

The longitudinal cross-sectional view of the principal part of the plating apparatus as 1st Embodiment of this invention. FIG. 2 is a cross-sectional view taken along line II-II in FIG. 1. The perspective view of a plating tank and a plating solution recovery tank. Sectional drawing of an example of the semiconductor device manufactured from a semiconductor wafer. FIG. 6 is a partial cross-sectional view of a state before forming columnar electrodes on a semiconductor wafer. FIG. 3 is a partial cross-sectional view of a state where columnar electrodes are formed on a semiconductor wafer. The top view of the principal part of the plating apparatus as 2nd Embodiment of this invention. FIG. 8 is a longitudinal sectional view taken along line VIII-VIII in FIG. 7.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Plating tank 2 Plating solution collection tank 4 Overflow recessed part 6 Wafer support plate 7 Anode electrode 9 Semiconductor wafer 10 Plating solution inflow and rectification structure 12 Plating solution inflow plate 13 First rectification plate 14 Second rectification plate 15 Electric field shielding Plate 16 Through hole 17 Plating solution inflow hole 19 Plating solution inflow pipe 20 Pump 21 Plating solution tank 22 Plating solution 23 Through hole 1a Plating tank body 1b Plating tank cover

Claims (24)

  A plating solution inflow member having a through hole in a portion corresponding to an object to be plated and having a plating solution inflow hole communicating with the through hole, and provided on one surface of the plating solution inflow member, allows passage of the plating solution. A first rectifying plate having a large number of permissible micro holes and a first rectifying plate provided on the other surface of the plating solution inflow member and having a large number of micro holes permitting the passage of the plating solution less than the first rectifying plate. 2. A plating apparatus comprising two rectifying plates.   In the first aspect of the present invention, the first rectifying plate is made of a porous plate and the second rectifying plate is made of a porous plate finer than the first rectifying plate. A plating apparatus characterized in that a current plate is disposed on a substrate side and is arranged vertically.   2. The plating apparatus according to claim 1, wherein the flow rate of the plating solution passing through the first rectifying plate is 70 to 90% of the total flow rate.   2. The plating apparatus according to claim 1, wherein the flow rate of the plating solution passing through the first rectifying plate is about 80% of the total flow rate.   2. The electric field according to claim 1, wherein the electric field is further shielded by a portion other than the through hole provided on the surface of the first rectifying plate and corresponding to the through hole of the plating solution inflow member. A plating apparatus comprising a shielding plate.   6. The plating apparatus according to claim 5, wherein the object to be plated has a circular shape, and each through hole of the plating solution inflow member and the electric field shielding plate has a circular shape.   7. The plating apparatus according to claim 6, wherein the object to be plated is a semiconductor wafer.   In the invention according to claim 5, the object to be plated and the anode electrode are vertically arranged opposite to each other in a plating tank whose upper surface is opened, and the object to be plated and the anode electrode are disposed between the object to be plated and the anode electrode. A plating apparatus, wherein the plating solution inflow member, the first rectifying plate, and the second rectifying plate are arranged vertically.   9. The plating apparatus according to claim 8, further comprising a plating solution recovery means for recovering a plating solution overflowing from the plating tank.   In the invention according to claim 5, the object to be plated and the anode electrode are disposed horizontally above and below in a hermetically sealed plating tank, and the first object is disposed between the object to be plated and the anode electrode. 1. A plating apparatus characterized in that one rectifying plate is disposed on a side to be plated and is disposed horizontally.   In the invention according to claim 10, a plurality of the plating tanks are stacked, and the object to be plated, the anode electrode and the plating solution inflow member, the first rectifying plate and the second rectifying plate are disposed therein. The plating apparatus characterized by the above-mentioned.   12. The plating apparatus according to claim 10, further comprising a plating solution recovery means for recovering the plating solution in the plating tank.   A plating solution inflow member having a through hole in a portion corresponding to an object to be plated and having a plating solution inflow hole communicating with the through hole, and provided on one surface of the plating solution inflow member, allows passage of the plating solution. A first rectifying plate having a large number of permissible micro holes and a first rectifying plate provided on the other surface of the plating solution inflow member and having a large number of micro holes permitting the passage of the plating solution less than the first rectifying plate. The plating solution flowing in from the plating solution inflow hole of the plating solution inflow member abuts on the object to be plated through the through hole and the first rectifying plate, and the second current plate. A plating method characterized by flowing out through a current plate. In the invention according to claim 13, the first rectifying plate is made of a porous plate and the second rectifying plate is made of a porous plate finer than the first rectifying plate. The current plate is placed on the workpiece side and is placed vertically.
The plating method characterized in that the plating solution flowing out via the second rectifying plate provided on the other surface of the plating solution inflow member is less than the first rectifying plate.   14. The plating method according to claim 13, wherein the flow rate of the plating solution passing through the first rectifying plate is 70 to 90% of the total flow rate.   14. The plating method according to claim 13, wherein the flow rate of the plating solution passing through the first rectifying plate is about 80% of the total flow rate.   14. The invention according to claim 13, wherein the plating solution inflow and rectification structure is provided on the surface of the first rectifying plate, and other than the through hole provided in a portion corresponding to the through hole of the plating solution inflow member. A plating method characterized in that the electric field is shielded by an electric field shielding plate in the portion of the above.   18. The plating method according to claim 17, wherein the object to be plated has a circular shape, and each through hole of the plating solution inflow member and the electric field shielding plate has a circular shape.   The plating method according to claim 18, wherein the object to be plated is a semiconductor wafer.   The invention according to claim 17 is located between the object to be plated and the anode electrode, which are vertically disposed opposite to each other in a plating tank having an open upper surface, and is vertical to the object to be plated. With respect to the first rectifying plate arranged in the plate, the plating solution flows out in the vertical lateral direction, and in the lateral direction perpendicular to the second rectifying plate through the micro holes of the second rectifying plate. A plating method characterized by being discharged.   21. The plating method according to claim 20, wherein the plating solution overflowing from the plating tank is recovered by a plating solution recovery means.   The invention according to claim 17 is located between the object to be plated and the anode electrode, which are horizontally arranged opposite to each other in the upper and lower sides in a hermetically sealed plating tank, and is horizontal with the object to be plated. The plating solution flows out vertically upward with respect to the first rectifying plate disposed in the vertical direction, and downwards perpendicular to the second rectifying plate through the micro holes of the second rectifying plate. A plating method characterized by being discharged.   23. The invention according to claim 22, wherein a plurality of the plating tanks are stacked, and the object to be plated, the anode electrode and the plating solution inflow member, the first current plate and the second current plate are disposed therein. A plating method characterized in that is disposed.   24. The plating method according to claim 22 or 23, wherein the plating solution in the plating tank is recovered by a plating solution recovery means.

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