JPH10172492A - Electron beam analysis device and electron beam analysis method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable precise analysis by measuring a sample displacement quantity by means of an information detecting device such as a characteristics X-ray, a secondary electron having higher detection efficiency than an Auger electron, or a transmission electron and correcting a analysis position. SOLUTION: When an analysis start signal is fed to a control unit 24, the control unit 24 perform sample irradiation when an electron beam is statically stopped at a position corresponding to a cross marker address, i.e., at an analysis position. A characteristics X-ray 12 generated by a sample due to an electron beam irradiation is detected by an X-ray detector 13, information of element distribution can be obtained by an intensity rate of a characteristics X-ray corresponding to a target element. After an electron beam is statically stopped about 10 seconds and analyzed, fetching of X-ray detecting signal is stopped, an electron beam is sample-scanned at the same magnification, a sample scan image is obtained again, and it is stored in a video memory of 1024×1024 picture elements in the control unit 24. Displacement with the previous scan image can be prevented because a drift quantity can be obtained from correlation of the sample scan image stored in two video memories, for example.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an analysis method and apparatus using an electron beam, and more particularly to an electron beam analysis method and apparatus for accurately analyzing the elemental composition of a sample.

[0002]

2. Description of the Related Art The element composition of a sample can be analyzed by irradiating the sample with an electron beam and measuring the energy spectrum of characteristic X-rays and Auger electrons generated from the sample. In order to improve the position resolution of the analysis,
It is necessary to irradiate an electron beam on the sample with a micro probe. In an electron microscope equipped with a field emission electron gun, the size of an electron beam probe can be reduced to 1 nm or less, so that the element composition in a 1 nm region can be analyzed. However, since the detected signal is weak, a large amount of time is required for measurement for high-accuracy analysis.

[0003]

For this reason, there is a risk that the sample irradiation position of the electron beam may deviate from the analysis start position during the analysis due to insufficient stability of the sample stage and the electron beam. Furthermore, since the analysis signals such as characteristic X-rays and Auger electrons are weak, it is almost impossible to detect a change in the analysis position from the analysis signals themselves. For this reason, there has been a problem that accurate analysis with high positional resolution cannot be performed.

[0004]

SUMMARY OF THE INVENTION The present invention corrects the analysis position by measuring the amount of sample displacement in a short time by means of detecting secondary electrons or transmitted electrons having higher detection efficiency than characteristic X-rays or Auger electrons. It is characterized by the following.

[0005]

BEST MODE FOR CARRYING OUT THE INVENTION

<Embodiment 1> FIG. 1 shows an electron beam analyzer according to an embodiment of the present invention. This embodiment is an embodiment using a scanning transmission electron microscope using a field emission electron source as an electron source. The electron beam emitted from the field emission electron source 1 is accelerated to a desired accelerating voltage by the electrostatic lens 2, and then is irradiated on the sample 7 by the condenser lens 3 and the objective lens 5. The electron beam is two-dimensionally scanned on the sample 7 by the deflector 4.

The transmitted electrons 14 transmitted through the sample 7 are detected by the detector 1
After being detected at 5, the signal is amplified by the signal amplifier 21. The amplified video signal is supplied to the display device 25 through the control unit 24 and becomes a luminance modulation signal. The deflection scanning of the electron beam is performed by the control unit 24 controlling the electron beam with a deflection signal sent from the deflection signal generator 10. at the same time,
A deflection signal synchronized with electron beam scanning is supplied to the display device 25, and a sample scan image is formed on the display device 25. The above is the basic configuration of the scanning transmission electron microscope.

Next, the analysis procedure according to the present invention will be described with reference to FIG. First, the electron beam is scanned on the sample at a predetermined magnification by the deflection signal supplied to the deflector 4 through the deflection signal generator 10 by the control unit 24, so that the display device 25 has the configuration shown in FIG. A sample scan image as shown is obtained. The scanning time for obtaining this scanning image is 1
Within seconds, the analysis sample is observed from this image.

On the scanned image, a cross marker as shown in FIG. 2B is displayed superimposed on the luminance modulation signal, and the analysis position is determined by adjusting the cross marker to the analysis position. This scanned image is, for example, 1024 in the control unit 24.
It is stored in a video memory A (not shown) of pixels × 1024 pixels.

Next, when an analysis start signal is sent to the control unit 24, the control unit 24 irradiates the sample with the electron beam stationary at a position corresponding to the address of the cross marker, that is, the analysis position (FIG. 2C). ). The characteristic X-rays 12 generated from the sample by excitation by electron beam irradiation are detected by the X-ray detector 13, and a characteristic X-ray spectrum as shown in FIG. 5 is obtained, for example. Information on element distribution can be obtained from the intensity ratio of characteristic X-rays corresponding to the element of interest.

In order to measure the energy resolution of the X-ray detection system under high conditions, the X-ray counting rate usually needs to be about 1000 cps. On the other hand, the fluctuation of the counting rate is represented by the square root of the counting rate. For example, in order to analyze with 0.3% accuracy, 100,000 counting is required, and the measuring time is required at least about 100 seconds. Assuming that the drift amount of the sample stage is 0.02 nm / sec, it must be corrected at intervals of 10 seconds in order to correct the displacement of 0.2 nm.

Therefore, after the electron beam is stopped and analyzed for about 10 seconds, the capture of the X-ray detection signal is stopped, the sample is scanned with the electron beam at the same magnification, and a sample scan image is obtained again.
Video memory B of 1024 pixels x 1024 pixels in 4
(Not shown) (FIG. 2D). The positional deviation from the previous scan image can be calculated, for example, by calculating the cross-correlation between the sample scan images stored in the video memory A and the video memory B, thereby calculating the drift amount of the sample.

In the next analysis, the electron beam irradiation position is corrected as shown in FIG. 2 (e) by adding an excitation current corresponding to the calculated drift amount to the scan coil and supplying it. By performing this correction every analysis for 10 seconds, accurate analysis without positional displacement can be performed.

<Second Embodiment> A second embodiment relates to position correction in X-ray surface analysis. The analysis procedure according to the present invention will be described with reference to FIG.

First, an analysis position is observed from a sample scanning image as shown in FIG. 3A, and a surface analysis position is determined. The scan time for obtaining this scan image is within one second. The scanned image is, for example, a video memory A of 1024 pixels × 1024 pixels.
Is stored.

Next, for example, a region of 64 nm × 64 nm is scanned with an electron beam at intervals of 1 nm, and this region is analyzed in about 40 seconds. The signal amount between the energy regions E1 and E2 corresponding to the characteristic X-ray energy of the specific element x is stored in the video memory M1 of 64 × 64 pixels in association with the address, and the display unit 25 performs luminance modulation. It is displayed (FIG. 3B).

At this point, the analysis is stopped, and the sample is scanned to confirm the analysis position. This scanning image is 1024 pixels ×
It is stored in the video memory B of 1024 pixels (FIG. 3
(C)). For example, by calculating the cross-correlation between the sample scan images stored in the video memories A and B, the drift amount d of the sample can be calculated.

In the next analysis, an excitation current corresponding to the calculated drift amount is added to the scan coil and supplied, so that the electron beam irradiation position is shifted as shown in FIG. Correct the displacement of the analysis position. By performing this correction at predetermined time intervals, it is possible to perform accurate analysis without positional deviation (FIG. 3E).

<Embodiment 3> The third embodiment relates to position correction in X-ray plane analysis. The analysis procedure according to the present invention will be described with reference to FIG.

First, the analysis position is observed from the sample scanning image, and the surface analysis position is determined. Next, the sample is irradiated with an electron beam by scanning. The signal amount between the energy regions E1 and E2 corresponding to the characteristic X-ray energy of the specific element z is associated with the address and the video memory M1 of 128 × 128 pixels
Are displayed on the display unit 24 while being luminance-modulated. The transmission scan image obtained at the same time is also stored in the video memory A1 of 128 × 128 pixels (FIG. 4).
(A)).

Next, the sample is scanned in the same manner, and the sample scan image is again stored in the video memory A2 of 128 pixels × 128 pixels.
Video memory M2 with X-ray image of 128 × 128 pixels
(FIG. 4B). Such scanning is performed N times, and the N-th sample scanning image is 128 pixels × 12 pixels.
X-ray image is 128 pixels x 1 in 8-pixel video memory An
Each is stored in the video memory Mn of 28 pixels (FIG. 4C).

The amount of drift of the sample is calculated by first cross-correlating the transmission scanning image A1 with A2, thereby calculating the amount of drift d2 of the sample with respect to A1. Transmission scanning image A1
Is performed up to An, and the drift amount dN of the N-th transmission scanning image An with respect to A1 is calculated. Next, a desired region of the X-ray image M1 of 128 pixels × 128 pixels, for example, a central 64 pixels × 64 pixels is selected, and the image is shifted by a drift amount d2 to obtain an X-ray of 64 pixels × 64 pixels.
The line image M2 is superimposed. This operation is performed N-1 times, and the N-th X-ray image Mn is superimposed on the X-ray image M1 with a drift amount dn (FIG. 4D).

The above operation may be performed each time a new image is captured, or may be performed after all images have been captured. By these operations, an X-ray image with a good SN can be obtained under the condition that there is no analysis position shift, and highly accurate two-dimensional elemental analysis can be performed.

In this embodiment, the number of pixels of the video memory for storing the transmission scanning image and the number of pixels of the video memory for storing the X-ray image are equal. However, in order to increase the number of X-rays detected in a unit pixel, The number of pixels of the video memory storing the X-ray image may be smaller than the number of pixels of the video memory storing the transmission scanning image.

In the above embodiment, the transmission electrons 14 transmitted through the sample are used as the position detection means of the sample.
The present invention is implemented with a similar configuration in a scanning electron microscope using a secondary electron image obtained by detecting a secondary electron 16 generated from a sample by a secondary electron detector 17. be able to.

In the above embodiment, the characteristic X-rays 12 generated from the sample are analyzed by the X-ray detector 13 as means for analyzing the sample.
However, the present invention can be implemented with a similar configuration by using a spectrum obtained by detecting Auger electrons 18 generated from a sample by an Auger electron detector 19.

[0026]

As described above, in the electron beam analyzer of the present invention, the amount of sample displacement is measured by information detecting means such as secondary electrons or transmitted electrons having higher detection efficiency than characteristic X-rays or Auger electrons. Correct analysis can be performed by correcting the analysis position.

[Brief description of the drawings]

FIG. 1 is a block diagram of an electron beam analyzer showing an embodiment of the present invention.

FIG. 2 is an explanatory diagram showing an analysis procedure according to the first embodiment of the present invention.

FIG. 3 is an explanatory diagram showing an analysis procedure according to a second embodiment of the present invention.

FIG. 4 is an explanatory diagram showing an analysis procedure according to a third embodiment of the present invention.

FIG. 5 is a spectrum diagram showing a characteristic X-ray spectrum.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Field emission electron source, 2 ... Electrostatic lens, 3 ... Condenser lens, 4 ... Deflector, 5 ... Objective lens, 6 ... Aperture, 7
... sample, 8 ... high voltage power supply, 9 ... condenser lens driving power supply, 10 ... deflection signal generator, 11 ... objective lens driving power supply, 12 ... X-ray, 13 ... X-ray detector, 14 ... transmission electron,
Reference numeral 15: transmitted electron detector, 16: secondary electron, 17: secondary electron detector, 18: Auger electron, 19: Auger electron detector, 20: amplifier, 21: amplifier, 22: amplifier, 2
3 ... amplifier, 24 ... control unit, 25 ... display unit.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification code FI G01N 23/227 G01N 23/227

Claims (9)

[Claims] An electron beam analyzer for irradiating a sample with an electron beam and detecting characteristic X-rays or Auger electrons generated from the sample and analyzing the elemental composition of the sample has a detection efficiency higher than that of the characteristic X-rays or Auger electrons. An electron beam analyzer characterized in that an analysis position is corrected by measuring a sample displacement amount by a high position detecting means. 2. The electron beam analyzer according to claim 1, wherein
An electron beam analyzer, wherein the position detecting means comprises means for detecting secondary electrons or transmitted electrons obtained by scanning the sample with an electron beam. 3. The electron beam analyzer according to claim 2, wherein
An electron beam analyzer wherein elemental composition analysis is not performed while a sample is being scanned with an electron beam. 4. An electron beam analyzer which scans a sample with an electron beam and displays a two-dimensional distribution image of the elemental composition of the sample from a characteristic X-ray or Auger electron signal generated from the sample. An electron beam analyzing apparatus for measuring an amount of displacement of a sample by a position detecting means having a higher detection efficiency than the signal detected and correcting an electron beam scanning position. 5. The electron beam analyzer according to claim 4, wherein
An electron beam analyzer wherein the position detecting means is a secondary electron or a transmitted electron obtained by scanning a sample. 6. An electron beam analyzer for irradiating a sample with an electron beam and analyzing the elemental composition of the sample from a signal such as characteristic X-rays generated from the sample. An electron beam analysis method characterized in that an analysis position is corrected by measuring a displacement amount. 7. The electron beam analyzing method according to claim 6, wherein
An electron beam analysis method, wherein the position detecting means is a secondary electron scanning image or a transmission scanning image obtained by scanning a sample. 8. The electron beam analyzing method according to claim 7, wherein
An electron beam analysis method, wherein a signal such as a characteristic X-ray is not detected while scanning a sample. 9. An electron beam analysis method for scanning an electron beam on a sample and displaying a two-dimensional distribution image of an element composition and the like of the sample from a signal such as characteristic X-rays generated from the sample. An electron beam analysis method, comprising: measuring a sample displacement amount by position detection means having a detection efficiency higher than the detected signal to correct an electron beam scanning position.