JP2008187200A - Charged particle beam drawing method using charged particle beam drawing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide: a charged particle beam drawing apparatus which accurately draws with a charged particle beam focused at desired positions on a surface of a test piece rotated around an axis in a different direction from a traveling direction of the charged particle beam; and a charged particle beam drawing method using the same. <P>SOLUTION: The charged particle beam drawing apparatus comprises: a charged particle beam source section 1 for generating and irradiating a charged particle beam; a height sensor section 4 for measuring a height of the test piece at a different position from an irradiation position of the charged particle beam; a focus lens section 2 for focusing the charged particle beam at the height of the test piece; a deflector section 3 for deflecting the charged particle beam; and a stage section 5 for holding and moving the test piece. The stage section 5 has a rotating driver section 5A for rotating the test piece around an axis in a direction not parallel to the traveling direction of the charged particle beam and a transmitting beam detector section 5B for detecting transmission of the charged particle beam, the height sensor section 4 controls the focus lens section 2, and the transmitting beam detector section 5B controls the deflector section 3. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a technique of a charged particle beam writing method using a charged particle beam writing apparatus using an electron beam, an ion beam, or the like.

  2. Description of the Related Art A charged particle beam lithography apparatus using an electron beam, an ion beam, or the like is widely used for the purpose of forming a desired fine pattern on various substrates in order to produce various elements such as semiconductor elements. . In particular, since there is no other suitable means for forming an arbitrary pattern having a size of several nanometers to several tens of nanometers, a point beam type electron beam drawing apparatus that performs drawing by converging an electron beam to a spot as small as possible, This technique is regarded as important for the purpose of producing a device having a nanometer size structure.

  The general configuration and operation of a conventional charged particle beam drawing apparatus are described in Non-Patent Document 1. Hereinafter, an example of the configuration and operation of a conventional charged particle beam drawing apparatus will be described with reference to FIGS. 5, 6, and 7. FIG. 5 is a diagram showing an example of the configuration of a conventional charged particle beam drawing apparatus, where 101 is a charged particle beam source unit, 101A is a charged particle beam from the charged particle beam source unit 101, and 102 is a charged particle beam 101A. And a converging lens unit 103 for deflecting the charged particle beam 101A.

  Reference numeral 110 denotes a sample to be irradiated with the charged particle beam 101A, 104 denotes a stage unit that holds and moves the sample 110, and 105 denotes a height of the surface of the sample 110 (a sample along the direction in which the charged particle beam 101A travels). 110 is an optical lever-type height sensor unit for measuring the position 110, 111 is a light irradiated on the sample 110 from the height sensor unit 105 to measure the height of the sample 110, and 106 is a reflected electron detector. The backscattered electron detector. The height sensor unit 105 includes an output unit 105A and a detection unit 105B. The output unit 105A irradiates the sample 110 with the light 111, and the detection unit 105B detects the height of the sample 110 from the reflection of the light 111.

  Next, the operation of the charged particle beam drawing apparatus will be described. The charged particle beam source unit 101 generates a charged particle beam 101A. The charged particle beam 101 </ b> A travels to the stage unit 104 disposed below, but converges near the surface of the sample 110 due to the action of the converging lens unit 102. Further, the charged particle beam 101A is deflected by the action of the deflecting unit 103 and irradiated so that a desired pattern is formed on the surface of the sample 110.

  At this time, the height sensor unit 105 irradiates light 111 in the vicinity of the irradiation region and detects the reflected light in advance so that the charged particle beam 101A converges on the surface of the sample 110. Measure the height. The charged particle beam 101A is accurately converged on the surface of the sample 110 by adjusting the action of the converging lens unit 102 in accordance with the measured height.

  In addition, the charged particle beam 101A is irradiated in the vicinity of a mark formed on the sample 110 in advance so that the charged particle beam 101A is deflected to a desired position on the surface of the sample 110, and reflected electrons (the charged particle beam 101A used). When the electron beam is an electron beam, it is referred to as a reflected electron, and when it is an ion beam, it is referred to as a secondary electron. The action of the deflecting unit 103 is adjusted according to the measured mark position. Thereby, the charged particle beam 101A is drawn at a desired position on the sample 110.

  In the charged particle beam drawing apparatus as described above, conventionally, in order to form a pattern of a semiconductor element, a transparent mask substrate for transferring a pattern to a semiconductor substrate or the semiconductor substrate itself is mainly used as a sample to be drawn. I came. Since the surfaces of these samples are flat and horizontally arranged, a two-dimensional pattern is formed on the sample surface by deflecting the charged particle beam in the horizontal direction or moving the stage in the horizontal direction. Can do. In addition, by detecting the backscattered electrons generated by the irradiation of the charged particle beam, the positions of the marks processed in advance on these samples can be measured, and drawing is performed at a desired position on the sample as a relative position therefrom. be able to.

  On the other hand, some apparatuses using a charged particle beam, such as a transmission electron microscope and a scanning electron microscope, can be used when the sample surface is not flat or the sample surface is not horizontal. These apparatuses are often equipped not only with a stage that translates the sample in the horizontal direction, but also with a drive mechanism that rotates the sample around an axis in the horizontal direction or the vertical direction. However, a charged particle beam drawing apparatus equipped with a rotation drive unit that rotates a sample around an axis in a direction other than the vertical direction (hereinafter referred to as an other direction axis) can also be used as a scanning electron microscope or a secondary electron microscope. There was never before. This is because, as described below, there has been no known means for measuring the height of the surface of the rotated and tilted sample and focusing the charged particle beam there. In addition, as described later, it is also an important reason that it is difficult to perform drawing with a charged particle beam at a desired position of a rotated and inclined sample.

  In order to focus the charged particle beam on the surface of the sample tilted by rotating around the other direction axis as described above, the height of the sample surface should be measured by a method different from that conventionally used. Is required. This is because, in the above-mentioned optical lever type height sensor, which has been used well in the past, the condition is that the sample surface is flat in the horizontal direction and has a certain degree of reflectivity for light. Because it is necessary. By the way, in a charged particle beam application device equipped with the above-mentioned rotation drive mechanism, adjustment can be made by changing the action of the converging lens while observing the image of the sample while irradiating the sample with the charged particle beam. Is possible. For this reason, it is not important to measure the height of the sample surface.

  When drawing a sample with a charged particle beam by rotating the sample around the above-mentioned other direction axis, various samples other than a flat one such as a semiconductor substrate are assumed as the sample. It is not always flat in the horizontal direction. At least, when the sample is rotated around the other direction axis, in most cases, the surface of the sample is inclined to be different from a flat state in the horizontal direction. Furthermore, a sample having a much lower reflectance with respect to light than a semiconductor substrate or a mask substrate which has been a conventional drawing target is also assumed.

  In this way, when it is difficult to measure the height of the sample surface with an optical lever-type height sensor, the sample must be charged particles in order to measure the height of the sample surface and perform charged particle beam drawing. It is necessary to measure the height of the sample surface at a location different from the position drawn by the beam (possibly by a method other than an optical lever). This is because there are parts such as a converging lens near the place where charged particle beam writing is performed, and a space for placing a height sensor other than the optical lever type cannot be secured. For a charged particle beam apparatus capable of measuring the height of the sample surface at a location different from the position where the sample is drawn with the charged particle beam, and a drawing method using the charged particle beam device, the “charged particle” This is described in detail in “Beam drawing apparatus and drawing method using the same” (Patent Document 1).

  Therefore, the charged particle beam is converged on the sample surface by measuring the surface height of the sample rotated around the other direction axis at a place different from the position drawn by the charged particle beam. However, it is possible to use the apparatus and method described in Patent Document 1 described above.

  Next, in order to explain the reason why it is difficult to perform drawing with a charged particle beam at a desired position of the sample rotated and tilted about the other direction axis, the related art will be described. A method of performing charged particle beam writing at a desired position on a sample using a mark on the sample in a conventional charged particle beam writing apparatus and writing method will be described with reference to FIG.

  FIG. 6A is a schematic diagram showing a method of reading a mark position by irradiating a charged particle beam in the vicinity of a mark processed in advance on a sample, and FIG. It is an example of the relationship with a position. In the figure, 110A is a groove mark that has been processed into a sample in advance. The other symbols in the figure are the same as those in FIG. Further, FIG. 6 shows a case where the surface of the sample 110 is in the horizontal direction.

  The charged particle beam 101A is irradiated in the vicinity of the mark 110A, and further, the vicinity of the mark 110A is scanned in the direction of the arrow M by the action of the deflecting unit 103, for example. At this time, the reflected electrons emitted from the sample 110 are detected by the reflected electron detector 106, and the signal intensity (reflected electron intensity) is a function of the position of the charged particle beam 101A that is directly associated with the amount of action of the deflector 103. , Associated. FIG. 6B shows an example of the relationship between the position (X) of the charged particle beam 101A and the reflected electron intensity when the surface of the sample 110 is in the horizontal direction. This relationship is symmetrical about the center of the mark 110A. For this reason, the center position of the mark 110A can be calculated by simple signal processing. It is possible to draw the charged particle beam at a desired position on the sample 110 by deflecting the charged particle beam 101A as the relative position from the center position of the mark or by moving the sample 110 by the stage unit 104. Become.

  By such a method, charged particle beam writing can be performed with a positional accuracy of 10 nm or less. The drawing position accuracy on the semiconductor substrate according to the prior art is described in detail in Non-Patent Document 2, for example. Incidentally, in a conventional scanning electron microscope equipped with the rotation drive mechanism described above, a desired position on the sample is observed while observing the image of the sample while irradiating the sample with a charged particle beam. It is possible to search. For this reason, it is not important to irradiate the charged particle beam accurately to a desired position on the sample from the beginning.

In this way, the conventional charged particle beam drawing apparatus and the drawing method using the same are combined with the sample driving technology used in other apparatuses that apply the conventional charged particle beam, By combining the technique of measuring the height of the sample surface at a position different from the irradiation position (Patent Document 1 described above), the surface of the sample can be rotated about a direction that is not parallel to the traveling direction of the charged particle beam. Drawing can be performed by converging the beam.
Japanese Patent Application No. 2002-107652 Electron / Ion Beam Handbook 3rd Edition (Japan Society for the Promotion of Science 132nd Committee, published by Nikkan Kogyo Shimbun, 1998) pp. 519-547 Jpn. J. Appl. Phy's.vol.37 pp.6788-6791 (1998)

  As described above, when the sample surface is horizontal, drawing with a charged particle beam can be performed at a desired position on the sample as a relative position from the mark processed in advance. However, when the sample surface is greatly inclined from the horizontal direction, it is extremely difficult to perform drawing at a desired position on the sample surface. The reason will be described with reference to FIG.

  FIG. 7A is a schematic diagram showing a method for reading a mark position by irradiating a charged particle beam near a mark processed in advance on a sample, and FIG. 7B shows a reflected electron intensity and beam. It is an example of the relationship with the position of. In the figure, 110A is a groove mark that has been processed into a sample in advance. The other symbols in the figure are the same as those in FIG. Further, FIG. 7 shows a case where the sample 110 is rotated and the surface is greatly inclined from the horizontal direction.

  In the case of the state shown in FIG. 7A, when the mark is read using the conventional method, the geometric relationship between the groove mark 110A and the charged particle beam 101A becomes complicated. The relationship with the distance is a complex waveform as shown in FIG. In this case, the center position of the mark 110A cannot be measured by a simple method. Even if a complicated method is used, it is difficult to accurately measure the position of the center (or a specific portion) of the mark 110A.

  When the sample 110 is rotated around an axis in a direction different from parallel to the charged particle beam 101A, the position of the mark itself moves (three-dimensionally) by the rotation, and further, a three-dimensional shape of a groove or a mark made of a different material. The intensity distribution of the detected signals such as reflected electrons greatly changes due to the change in the target arrangement. For this reason, it is difficult to accurately read the mark position itself. Therefore, in such a case, it has been impossible to perform drawing at a desired position on the surface of the sample using the conventional apparatus and method.

  The present invention solves the above-mentioned problem, and focuses the charged particle beam at a desired position on the sample surface rotated about an axis in a direction different from the traveling direction of the charged particle beam, thereby accurately drawing. An object of the present invention is to provide a charged particle beam writing method using a charged particle beam writing apparatus.

  In order to solve the above-mentioned problems, the invention of claim 1 is characterized in that a charged particle beam source unit for generating and irradiating a charged particle beam, and a height of a surface of a sample to be irradiated with the charged particle beam, A first height sensor for measuring at a position different from the position irradiated with the particle beam; a converging lens for converging the charged particle beam to the height of the surface of the sample; and a deflection for deflecting the charged particle beam. And a stage unit that holds and moves the sample, the stage unit rotating the sample about a direction that is not parallel to the traveling direction of the charged particle beam, and the charged particle beam A charged particle beam drawing method using a charged particle beam drawing apparatus having a transmitted beam detection unit for detecting transmission of light, wherein the sample is rotated by the rotation drive unit and set in a desired direction. And measuring the height distribution of the surface of the sample with the height sensor unit, moving the sample to a position where the charged particle beam is irradiated, and scanning beam intensity and beam position when the charged particle beam is scanned. The transmitted beam detector detects the relationship between the sample position and the center position of the sample, and an offset is added to the amount of action of the deflector according to the measured contour position or center position of the sample. And drawing a desired pattern with a charged particle beam at a desired position on the sample.

  In the charged particle beam drawing apparatus used in the present invention, the stage unit has a rotation driving unit that rotates the sample about a direction that is not parallel to the traveling direction of the charged particle beam, and the charged particle beam is applied to the sample. The height sensor unit measures the height of the sample surface at a position different from the position where the sample is irradiated. Furthermore, a transmission beam detection unit for detecting a charged particle beam is provided in a stage unit immediately below the sample.

  In the drawing method of the present invention using the above charged particle beam drawing apparatus, first, the deflecting unit deflects the charged particle beam near the sample, and charged particles according to the signal waveform output from the transmitted beam detecting unit at that time. The deflection amount of the deflection unit when the beam is drawn is changed.

  In the present invention, when drawing on a sample that can be rotated about a direction that is not parallel to the traveling direction of the charged particle beam, the charged particle beam is scanned across the part where the contour of the sample or the transmitted beam intensity changes. The transmitted charged particle beam is detected by the transmitted beam detector. As a result, the contour position or center position of the sample, or a specific position within the sample is accurately measured, and an offset is added to the deflection amount of the charged particle beam in accordance with the position, thereby obtaining a desired position on the sample. Thus, a desired pattern can be accurately formed.

  The charged particle beam writing method using the charged particle beam writing apparatus of the present invention includes a rotation driving unit that rotates the sample around a direction that is not parallel to the traveling direction of the charged particle beam. In addition, the height sensor unit measures the height of the surface of the sample at a position different from the position where the sample is irradiated with the charged particle beam, and the charged particle beam is detected on the stage immediately under the sample. A transmitted beam detector.

  This makes it possible to focus the charged particle beam on the surface of the rotated sample. Further, the charged particle beam is deflected in the vicinity of the sample, and the deflection amount of the deflecting unit at the time of drawing is changed according to the signal waveform output from the transmitted beam detecting unit at that time. This makes it possible to accurately draw at a desired position on the sample.

  Embodiments of the present invention will be described in detail below with reference to the drawings.

  FIG. 1 is a schematic diagram of a charged particle beam drawing apparatus showing an embodiment of the present invention. The charged particle beam drawing apparatus in FIG. 1 includes a charged particle beam source unit 1, a converging lens unit 2, a deflection unit 3, a height sensor unit 4, and a stage unit 5. The stage unit 5 includes a rotation drive unit 5A and a transmitted beam detection unit 5B.

  The charged particle beam source unit 1 outputs the charged particle beam 1 </ b> A toward the surface of the stage unit 5. The deflection unit 3 deflects the charged particle beam 1A from the charged particle beam source unit 1 under the control of the transmitted beam detection unit 5B. The converging lens unit 2 converges the charged particle beam 1 </ b> A deflected by the deflecting unit 3 under the control of the height sensor unit 4.

  The height sensor unit 4 measures the height of the surface of the sample 10 at a measurement position different from the position where the charged particle beam source unit 1 irradiates the charged particle beam 1A.

Rotary drive unit 5A is provided with a holding portion 5A ₁ for holding a sample 10. The holding portion 5A ₁ rotates the sample 10 around the direction that is not parallel to the traveling direction of the charged particle beam 1A, that is, the longitudinal direction of the holding portion 5A _{1 in} this embodiment. Further, the rotation drive unit 5A is movable on the stage unit 5 in the direction of arrow A and in the opposite direction. That is, the rotation driving unit 5A arranges the sample 10 at the measurement position of the height sensor unit 4, and arranges the sample 10 at the irradiation position of the charged particle beam 1A from the charged particle beam source unit 1.

  The transmitted beam detector 5 </ b> B is disposed on the surface side of the stage unit 5. The transmitted beam detector 5B detects the charged particle beam transmitted through the sample 10 when the charged particle beam 1A is output from the charged particle beam source unit 1. Then, the transmitted beam detection unit 5B deflects the deflection unit 3 based on the detection result.

  In the present embodiment, the charged particle beam 1 </ b> A generated from the charged particle beam source unit 1 is converged near the surface of the sample 10 by the action of the converging lens unit 2. The charged particle beam 1 </ b> A is deflected by the action of the deflecting unit 3 and irradiated so that a desired pattern is formed on the surface of the sample 10. At this time, the sample 10 is rotated in advance by the rotation drive unit 5A so that the sample 10 has a desired orientation. In addition, the height sensor unit 4 measures the height (distribution) of the surface of the sample 10 in advance so that the charged particle beam 1A is accurately converged on the surface of the sample 10 while the sample 10 is rotated. . This measurement is performed at the measurement position.

  Further, the sample 10 is rotated, and the charged particle beam 1A is deflected by the action of the deflecting unit 3 while being in the vicinity of the irradiation position of the charged particle beam 1A, and the transmitted beam intensity output from the transmitted beam detecting unit 5B is deflected. The contour position or the center position of the sample 10 is measured in correspondence with the amount of action of the unit 3. Based on the measurement result, the charged particle beam 1A is deflected to a desired position on the sample 10, and the sample 10 is moved by the stage unit 5 as necessary, thereby drawing on the desired position of the sample 10. Is possible.

  Next, a method for measuring the contour position or the center position of the sample 10 will be described with reference to FIGS. 2 and 3 are schematic diagrams showing a method for measuring the contour position or the center position of the sample by irradiating the vicinity of the sample with a charged particle beam, and an example of the relationship between the transmitted beam intensity and the beam position. The symbols in the figure are the same as those in FIG. FIG. 2 shows a case where the surface of the sample 10 is substantially horizontal, and FIG. 3 shows a case where the sample 10 is rotated and the surface is greatly inclined from the horizontal direction.

  The method for associating the transmitted beam intensity with the position of the charged particle beam 1A is the same only by replacing the reflected electrons in the description of FIGS. 6 and 7 with the transmitted beam. However, in the present embodiment, it is not always necessary to process a mark on the sample 10 in advance, and the fact that the intensity of the transmitted beam changes greatly depending on the contour of the sample 10 is used. As shown in FIGS. 2 (a) and 3 (a), when the charged particle beam 1A is scanned in the direction of the arrow B, for example, as shown in FIGS. 2 (b) and 3 (b), the transmitted beam intensity and The relationship with the beam position corresponds to an outline obtained by projecting the shape of the sample 10 in that state onto the horizontal plane, no matter how the sample 10 is tilted. Therefore, the position of the contour or the center position of the sample 10 can be accurately measured.

  Thereby, if the shape and rotation angle of the sample 10 are measured in advance, the relationship between an arbitrary position on the surface of the sample 10 in the rotated state and the contour or the center position can be easily obtained. Therefore, by adding an offset to the amount of action of the deflecting unit 3 so that the charged particle beam 1A is irradiated to a desired position on the sample 10, the sample unit 10 is also moved by the stage unit 5 if necessary. By doing so, it becomes possible to perform charged particle beam writing at a desired position on the sample 10.

  The charged particle beam drawing apparatus according to the present embodiment is shown in FIG. The charged particle beam drawing apparatus of FIG. 4 includes an electron beam source unit 21, a converging lens unit 22, a deflection unit 23, a first height sensor unit 24, a second height sensor unit 25, a stage unit 26, and a holder unit. 27. The main operations of the converging lens unit 22 for converging the electron beam 21A and the deflecting unit 23 for deflecting the electron beam 21A are the same as those in the above embodiment.

The holder unit 27 includes a sample holder 27A, a rotation drive unit 27B, a holding portion 27C, and a height mark 27D. The holding portion 27C holds the sample 30, and the rotation driving unit 27B is provided in the sample holder 27A, and rotates the holding portion 27C in the sample holder 27A to rotate the sample 30. That is, the rotation drive unit 27B and the holding portion 27C are the same as the rotation drive unit 5A and the holding portion 5A1 of the _first embodiment. The height mark 27D is formed on the surface of the sample holder 27A, and is referred to when measuring the height.

The first height sensor unit 24 includes a stage 24A and a confocal laser microscope 24B. The stage 24A holds and moves the sample holder 27A in the first height sensor unit 24. The first height sensor unit 24 measures the height distribution of the surface of the sample 30 as a relative value from the height of the height mark 27D using the confocal laser microscope 24B. The second height sensor unit 25 measures the height mark 27D height of the holder unit 27 at the irradiation position of the electron beam 21A using an optical lever-type height sensor. The second height sensor unit 25 includes an output unit 25A and a detection unit 25B. The output unit 25A has the light 25A ₁ irradiates the measurement target, the detection unit 25B detects the height of the measurement object from the reflection of light 25A _1.

  The stage unit 26 includes a stage 26A and a transmission electron detection unit 26B. The stage 26 </ b> A holds and moves the holder portion 27 within the stage portion 26. The transmitted electron detector 26B detects electrons that have passed through the sample 30 by irradiation with the electron beam 21A.

  The main operations and actions of these components are as described in the first embodiment. However, the electron beam source unit 21 is used as the charged particle beam source unit 1 of the first embodiment, and the transmission electron detection unit 26B is used as the transmitted beam detection unit 5B of the first embodiment. Furthermore, the 1st height sensor part 24 and the 2nd height sensor part 25 are used as what corresponds to the height sensor part 4 of Embodiment 1. FIG.

  Details of the method of adjusting the action of the converging lens unit 12 using these two height sensor units 24 and 25 and the height mark 27D of the holder unit 27 are described in Patent Document 1 described above. . In brief, first, the first height sensor unit 24 measures the height distribution of the surface of the sample 30 as a relative value from the height of the height mark 27D. Next, the holder part 27 is moved in the direction of arrow C and moved to the stage part 26, and the height of the height mark 27D at the irradiation position of the electron beam 21A is measured by the second height sensor part 25. By adding the height distribution of the surface of the sample 30 that has already been measured to the height, the height at the drawing position on the surface of the sample 30 is obtained, and the converging lens unit so that the electron beam 21A converges to that height. 22 is adjusted.

  By using the confocal laser microscope 24B for the height sensor unit 24, the accuracy of 0.1 μm or less is obtained even when the surface of the sample 30 is greatly inclined or has a complicated shape, and even when the reflectance to light is low. Thus, there is an advantage that the height distribution on the surface of the sample 30 can be measured. Further, by using the electron beam 21A as the charged particle beam 1A of the first embodiment, damage to the sample 30 and the transmitted electron detection unit 26B can be reduced compared to using an ion beam, and the drawing position can be reduced at a low cost. There is an advantage that accuracy can be maintained.

  In this way, when the sample is rotated around an axis that is not parallel to the charged particle beam, the charged particle beam is converged by measuring the height of the sample surface at a position different from the position where the charged particle beam is irradiated. Can be made. Furthermore, a charged particle beam is scanned in advance near the sample, and the contour or center position of the sample is accurately obtained from the relationship between the transmitted beam intensity and the beam position, and an offset is added to the action of the deflection unit accordingly. Thus, it is possible to accurately perform drawing at a desired position on the sample.

  The embodiment of the present invention has been described in detail above, but the specific configuration is not limited to the above-described embodiments, and even if there is a design change or the like without departing from the gist of the present invention, Included in the invention. For example, in the above-described embodiment, the method of measuring the position of the contour of the sample by the transmitted beam detection unit has been described. However, when there is a region having a different transmittance in the sample, or a region having a different transmittance can be formed in advance. A sample may be processed and used as a mark. In the case of the method for measuring the position of the contour of the sample, it is not necessary to process the sample in advance, and it is not necessary to consider the internal structure and material of the sample, which is convenient. However, this method may take some time to move the sample if the sample is somewhat large. The method of processing regions having different transmittances in advance has an advantage that the drawing time can be optimized when the orientation and drawing position of the sample at the time of drawing are determined in detail. However, in this method, there are cases where the mark portion of the sample has to be processed largely.

  Further, in the above-described embodiment, the scanning speed and the action of the focusing lens when measuring the transmitted electron intensity by scanning the electron beam in the vicinity of the sample are not particularly described. When the electron beam is converged on the sample surface and scanned slowly for a certain degree, the portion of the sample is exposed (modified) to the electron beam as in the case of drawing with the electron beam, which is often not preferable. In such a case, it is preferable to increase the scanning speed sufficiently or adjust the action of the converging lens so that the electron beam does not converge on the sample so that the sample is not exposed (deformed).

  In the above-described embodiment, an example in which a confocal laser microscope is used as the height sensor unit has been described. However, a laser interferometer, a high-precision optical lever-type height sensor, an electric capacitance sensor, an atomic force microscope, a conflict sensor Other measuring devices that can measure the height and gap may be used.

  In the above-described embodiment, the details of the rotation drive unit that rotates the sample are omitted. However, the rotation drive unit has a plurality of rotation axes as used in the conventional charged particle beam application apparatus described above, and is arranged in an arbitrary direction. Needless to say, a driving device capable of rotating the sample may be used.

  The embodiments of the present invention described above are only a part of the embodiments that can be considered according to the present invention. The existing methods related to charged particle beam application apparatuses, the existing technologies related to rotational driving, and the transmitted beam intensity The present invention can take many embodiments by combining existing algorithms relating to signal processing and drawing. The specific combination should be selected in accordance with the required accuracy and processing time and the purpose of drawing, and the same effect can be obtained by an appropriate combination.

It is a schematic diagram which shows the charged particle beam drawing apparatus for describing Embodiment 1 of this invention. It is a figure for demonstrating embodiment of this invention in case the surface of a sample is a substantially horizontal direction, (a) is a schematic diagram which shows the method of measuring the outline position or center position of a sample, (b) is transmission It is a figure which shows the example of the relationship between beam intensity and a beam position. It is a figure for demonstrating embodiment of this invention when the surface of a sample is inclined largely from a horizontal direction, (a) is a schematic diagram which shows the method of measuring the outline position or center position of a sample, (b) ) Is a diagram showing an example of the relationship between transmitted beam intensity and beam position. It is a schematic diagram which shows the charged particle beam drawing apparatus for describing Embodiment 2 of this invention. It is a schematic diagram which shows the example of the conventional charged particle beam drawing apparatus. It is a figure for demonstrating the method of the mark position reading in the conventional charged particle beam drawing apparatus in case the sample surface is a horizontal direction, (a) is a schematic diagram, (b) shows the relationship between reflected electron intensity and distance. FIG. It is a figure for demonstrating the method of the mark position reading in the conventional charged particle beam drawing apparatus in case the sample surface is inclined, (a) is a schematic diagram, (b) shows the relationship between reflected electron intensity and distance. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Charged particle beam source part 1A Charged particle beam 2 Converging lens part 3 Deflection part 4 Height sensor part 5 Stage part 5A Rotation drive part 5A ₁ Holding part 5B Transmission beam detection part 10 Sample 21 Electron beam source part 21A Electron beam 22 Convergence Lens unit 23 Deflection unit 24 First height sensor unit 24A Stage 24B Confocal laser microscope 25 Second height sensor unit 26 Stage unit 26A Stage 26B Transmission electron detection unit 27 Holder unit 27A Sample holder 27B Rotation drive unit 27C Holding Part 27D Height mark 101 Charged particle beam source unit 101A Charged particle beam 102 Converging lens unit 103 Deflection unit 104 Stage unit 105 Height sensor unit 105A Output unit 105B Detection unit 106 Backscattered electron detection unit 110 Sample 110A Mark 111 Light

Claims (1)

A charged particle beam source (1) for generating and irradiating a charged particle beam;
A first height sensor unit (4) for measuring the height of the surface of the sample to be irradiated with the charged particle beam at a position different from the position irradiated with the charged particle beam;
A converging lens portion (2) for converging the charged particle beam to the height of the surface of the sample;
A deflection unit (3) for deflecting the charged particle beam;
A stage unit (5) for holding and moving the sample,
The stage unit (5) includes a rotation driving unit (5A) that rotates the sample about a direction that is not parallel to the traveling direction of the charged particle beam, and a transmitted beam detection unit (for detecting transmission of the charged particle beam). 5B), a charged particle beam writing method using a charged particle beam writing apparatus,
Rotating the sample by the rotation drive unit (5A) and setting the sample to a desired orientation, and measuring the height distribution of the surface of the sample by the height sensor unit (4);
The sample is moved to a position where the charged particle beam is irradiated, and the relationship between the transmitted beam intensity and the beam position when the charged particle beam is scanned is detected by the transmitted beam detector (5B), and the contour position of the sample or Measuring the center position; and
Adding an offset to the amount of action of the deflection unit (3) according to the measured contour position or center position of the sample, and drawing a desired pattern with a charged particle beam at a desired position on the sample; A charged particle beam writing method comprising:

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